CN115386948B - Single crystal growth furnace and crystal growth method - Google Patents
Single crystal growth furnace and crystal growth method Download PDFInfo
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- CN115386948B CN115386948B CN202211178389.XA CN202211178389A CN115386948B CN 115386948 B CN115386948 B CN 115386948B CN 202211178389 A CN202211178389 A CN 202211178389A CN 115386948 B CN115386948 B CN 115386948B
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- crystal growth
- crucible
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- 239000013078 crystal Substances 0.000 title claims abstract description 76
- 238000002109 crystal growth method Methods 0.000 title claims abstract description 15
- 238000004321 preservation Methods 0.000 claims abstract description 48
- 235000014347 soups Nutrition 0.000 claims abstract description 25
- 238000010521 absorption reaction Methods 0.000 claims abstract description 16
- 230000001105 regulatory effect Effects 0.000 claims abstract description 14
- 238000009413 insulation Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 238000002310 reflectometry Methods 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 230000001276 controlling effect Effects 0.000 claims description 6
- 230000003750 conditioning effect Effects 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a single crystal growth furnace and a crystal growth method, wherein the single crystal growth furnace comprises: a furnace body; a crucible; a heater provided in the furnace chamber and surrounding a radially outer side of the crucible; the heat preservation structure includes: the heat preservation piece and regulating part, the thermal reflection coefficient or the thermal absorption coefficient of regulating part is different with the heat preservation piece, the regulating part set up in between the heat preservation piece with the heater can be relative the heat preservation piece rotates, is used for adjusting the heat preservation piece with the area of heater opposite face. According to the single crystal growth furnace, the heat transferred to the crucible by the heater is controlled in the circumferential direction of the crucible, so that the fine adjustment of the heat of molten soup in the crucible is realized, the uneven temperature distribution in the circumferential direction of the molten soup is improved, and the problems of uneven crystal growth and uneven oxygen content in a crystal bar are solved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a single crystal growth furnace and a crystal growth method.
Background
In the related art, it is pointed out that in the conventional CZ (czochralski method), a polycrystalline silicon material in a crucible is melted into a molten soup by heating, and the molten soup is crystallized in a crystal growth environment along with rotation and pulling of a seed crystal to form a crystal rod. In the process of crystal growth, the temperature in the furnace chamber of the single crystal furnace is usually controlled by adjusting the heating power of a heater, but the power adjustment range of the heater is larger, fine adjustment is difficult to carry out, the temperature in the furnace chamber is changed greatly in the process of crystal growth, the temperature cannot be controlled accurately, and the quality of the grown crystal is further affected.
In addition, the MCZ single crystal growth method applies a magnetic field to the crucible on the basis of the traditional CZ method, and the magnetic field penetrates through the crucible along the radial direction of the crucible so as to inhibit heat convection in molten silicon soup, and simultaneously, the oxygen content in the crystal bar is reduced. The MCZ method is classified into HMCZ (applied transverse magnetic field) and VMCZ (applied longitudinal magnetic field) according to the difference of applied magnetic fields. For HMCZ method, magnetic force lines in the magnetic field application process pass through silicon melt in a quartz crucible from one end to the other end in parallel, lorentz force can only be generated in the direction of a vertical magnetic field, and eddy current generated by molten soup under the action of the Lorentz force partially counteracts forced eddy current generated by crystal rotation, crucible rotation, crystal bar lifting and the like, but the other part cannot be counteracted, so that the problem of redundant eddy current caused by the magnetic field occurs. The HMCZ method cannot adjust the thermal field in the direction parallel to the magnetic field, namely HMCZ has instability in a single direction, so that molten soup has larger vortex in the direction perpendicular to the magnetic field, stability of a molten soup interface is not facilitated, the thermal field cannot be adjusted in the direction parallel to the magnetic field, and the problems of uneven growth of a crystal bar and uneven oxygen content in the crystal bar are caused.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the invention aims to provide a single crystal growth furnace which can solve the problems of uneven crystal growth and uneven oxygen content in a crystal bar.
The invention also provides a crystal growth method.
A single crystal growing furnace according to a first aspect of the present invention includes: the furnace body is internally provided with a furnace chamber; the crucible is arranged in the furnace chamber and used for containing molten soup; a heater provided in the furnace chamber and surrounding a radially outer side of the crucible; insulation construction includes: the heat preservation piece and regulating part, the thermal reflection coefficient or the thermal absorption coefficient of regulating part is different with the heat preservation piece, the regulating part set up in between the heat preservation piece with the heater can be relative the heat preservation piece rotates, is used for adjusting the heat preservation piece with the area of heater opposite face.
According to the single crystal growth furnace, the heat preservation parts with different heat reflection coefficients or heat preservation coefficients and the heat preservation structures of the adjusting parts are arranged, and the adjusting parts can rotate relative to the heat preservation parts, so that the relative area of the heat preservation parts and the heater is changed, the heat transferred to the crucible by the heater is controlled in the circumferential direction of the crucible, the fine adjustment of the heat of molten soup in the crucible is realized, the uneven temperature distribution in the circumferential direction of the molten soup is improved, and the problems of uneven crystal growth and uneven oxygen content in a crystal bar are solved.
In some embodiments, the insulation comprises: the reflection part and the absorption part are alternately connected, the thermal reflectivity of the reflection part is higher than that of the absorption part, and the thermal absorptivity of the absorption part is higher than that of the reflection part; the adjusting member includes: the reflecting portion or the absorbing portion.
In some embodiments, the insulating member is formed with first and second regions alternately arranged along a circumferential direction of the insulating structure, one of the first and second regions being the reflecting portion, and the other of the first and second regions being the absorbing portion; the adjusting piece is formed with a third area and a fourth area which are alternately arranged along the circumferential direction of the heat insulation structure, the third area is the reflecting part or the absorbing part, and the fourth area is a hollow structure.
In some embodiments, the insulating member is rotatable relative to the adjustment member between a first position and a second position, the fourth region and the first region at least partially overlapping when the adjustment member is in the first position relative to the insulating member; the fourth region and the second region at least partially overlap when the conditioning element is in the second position relative to the insulating element.
In some embodiments, the insulating structure comprises: the side heat preservation structure is sleeved on the radial outer side of the heater.
In some embodiments, the insulating structure comprises: the bottom heat preservation structure is arranged in the furnace chamber and positioned below the crucible.
In some embodiments, the reflective portion is formed of molybdenum and the absorptive portion is formed of graphite.
In some embodiments, the insulating member and the adjusting member each comprise: the furnace chamber comprises a first connecting part, a second connecting part and a plurality of main body parts, wherein the first connecting part and the second connecting part are arranged at intervals along the axial direction of the furnace chamber, the main body parts are arranged between the first connecting part and the second connecting part, the first connecting part and the second connecting part are annular, and the main body parts are arranged along the circumferential direction of the first connecting part and the second connecting part in a connecting mode.
In some embodiments, the single crystal growth furnace further comprises: and the driving mechanism is connected with the heat preservation piece and/or the adjusting piece and drives the heat preservation piece and the adjusting piece to rotate relatively.
A crystal growth method of a single crystal growth furnace according to a second aspect of the present invention, for growing a crystal using the single crystal growth furnace according to the first aspect of the present invention, includes: and controlling the adjusting piece to rotate relative to the heat preservation piece, and adjusting the area of the heat preservation piece opposite to the heater so as to adjust the temperature in the furnace chamber.
According to the crystal growth method of the single crystal growth furnace, the crystal is grown by using the single crystal growth furnace according to the embodiment of the first aspect of the invention, so that the stability of a solid-liquid interface is improved, the problem of impurity segregation is avoided, the thermal field is regulated in the direction of a parallel magnetic field, the uneven temperature distribution in the circumferential direction of molten soup is improved, and the problems of uneven crystal growth and uneven oxygen content in a crystal rod are solved.
Further, the single crystal growing furnace includes: a transverse magnetic field applying device arranged in the furnace chamber for applying a transverse magnetic field to the molten soup in the crucible,
The crystal growth method further includes: and controlling the relative positions of the heat insulation structure and the transverse magnetic field according to the direction of the transverse magnetic field, so that the heat reflection coefficient of the heat insulation structure in the direction parallel to the transverse magnetic field is smaller than that in the direction perpendicular to the transverse magnetic field.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a schematic view of a single crystal growing furnace according to an embodiment of the present invention, wherein an inner insulating layer is in a first position;
FIG. 2 is a schematic view of the side insulating structure shown in FIG. 1 with the inner insulating layer in a first position;
FIG. 3 is a schematic view of the single crystal growing furnace shown in FIG. 1, wherein the inner insulating layer is in a second position;
FIG. 4 is a schematic view of the side insulating structure shown in FIG. 1 with the inner insulating layer in a second position;
FIG. 5 is a schematic rotational view of the side insulating structure shown in FIG. 1;
FIG. 6 is a schematic view of a single crystal growing furnace according to another embodiment of the present invention, wherein an inner insulating layer is in a first position;
FIG. 7 is a schematic view of the side insulating structure shown in FIG. 6 with the inner insulating layer in a first position;
FIG. 8 is a schematic view of the single crystal growing furnace shown in FIG. 6, wherein the inner insulating layer is in a second position;
FIG. 9 is a schematic view of the side insulating structure shown in FIG. 6 with the inner insulating layer in a second position;
FIG. 10 is a schematic rotational view of the side insulating structure shown in FIG. 6;
FIG. 11 is a schematic view of a single crystal growing furnace according to yet another embodiment of the present invention;
Fig. 12 is a schematic view of a single crystal growing furnace according to still another embodiment of the present invention.
Reference numerals:
100. a single crystal growth furnace;
1. a furnace body; 11. a furnace chamber;
2. a crucible; 21. a quartz crucible; 22. a graphite crucible;
3. A heater;
4. A thermal insulation structure;
41. a thermal insulation member; 411. a first zone; 412. a second zone;
42. an adjusting member; 421. a third zone; 422. a fourth zone;
5. A guide cylinder.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
A single crystal growing furnace 100 according to an embodiment of the present invention is described below with reference to fig. 1 to 12.
As shown in fig. 1, a single crystal growth furnace 100 according to an embodiment of the present invention includes: furnace body 1, crucible 2, heater 3 and insulation construction 4.
Specifically, be formed with furnace chamber 11 in furnace body 1, crucible 2 is located in furnace chamber 11 and is used for holding the molten steel, and heater 3 is located in furnace chamber 11 and encircles the radial outside of crucible 2, and insulation construction 4 includes: a thermal insulation member 41 and an adjustment member 42. The adjusting member 42 is provided between the heat insulating member 41 and the heater 3, and is rotatable relative to the heat insulating member 41. The adjusting member 42 has a heat reflection coefficient or a heat absorption coefficient different from that of the heat insulating member 41 for adjusting the areas of the opposite faces of the heat insulating member 41 and the heater 3.
In the heat radiation field, heat is projected to the surface of an object, and heat reflection, heat absorption, and heat transmission phenomena may occur. Thermal reflectivity refers to the ratio of the energy reflected by the surface of an object to the total energy projected onto the object among the heat rays transmitted to the object, and the heat reflected by an object having a high thermal reflectivity is relatively large. The heat absorption rate refers to a ratio of absorbed energy to total energy projected in heat rays projected onto an object, and the object having a high heat absorption rate absorbs relatively much heat. The heat transmittance refers to the ratio of the energy transmitted in the heat rays projected onto the surface of the object to the total energy projected onto the surface, and the object with high heat transmittance has more heat dissipation and poorer heat preservation performance than the former two.
The heat insulating member 41 and the adjusting member 42 disclosed in the embodiment of the invention can be made of materials with low heat transmittance and different heat reflectivity or heat absorptivity, so that the heat insulating performance of the heat insulating structure 4 can be ensured. The adjusting piece 42 can rotate relative to the heat preservation piece 41, and can form shielding for the heat preservation piece 41 between the heater 3 and the heat preservation piece 41, so that the heat preservation performance of the whole heat preservation structure 4 on the single crystal growth furnace 100 is changed, and the temperature of the furnace chamber 11 is regulated and controlled.
In some embodiments of the present invention, the thermal insulation member 41 has reflective portions and absorptive portions alternately connected, the reflective portions having a higher thermal reflectivity than the absorptive portions, and the absorptive portions having a higher thermal absorptivity than the reflective portions. The regulating member 42 includes: a reflective portion or an absorptive portion.
The reflecting portion reflects a part of the heat rays into the furnace chamber 11 after receiving the heat generated by the heater, the absorbing portion absorbs a part of the heat rays after receiving the heat generated by the heater 3, the heat reflected by the reflecting portion is greater than the heat reflected by the absorbing portion, and the heat absorbed by the absorbing portion is greater than the heat absorbed by the reflecting portion. In the embodiment of the invention, the heat preservation member 41 is arranged between the furnace body 1 and the heater 3, the heat preservation member 41 and the heater 3 are provided with opposite surfaces, the heat reflectivity of the reflecting part in the heat preservation member 41 is higher than that of the absorbing part, the heat absorptivity of the absorbing part is higher than that of the reflecting part, the areas of the reflecting part and the part opposite to the heater 3 are adjustable, and whether the area of the reflecting part or the area of the absorbing part is larger in the opposite surfaces of the heat preservation member 41 and the heater 3 can be controlled. In addition, it should be noted that, in the actual crystal growth process, the crucible 2 needs to rotate continuously, so although the insulating member 41 of the embodiment of the present invention has two different materials, the relative rotation of the insulating member 41 and the crucible 2 can balance the temperature difference in the circumferential direction of the crucible 2, and stabilize the thermal field. The areas of the reflecting portion and the absorbing portion facing the crucible 2 may be the same or different, and the areas of the reflecting portions may be the same or different. The reflective portions and the absorptive portions of the insulating material 41 may be alternately arranged at intervals, or the reflective portions may be continuously arranged or the absorptive portions may be continuously arranged.
In some embodiments of the present invention, as shown in fig. 2, the insulating member 41 is formed with first regions 4121 and second regions 4122 alternately arranged along the circumferential direction of the insulating structure 4, one of the first regions 4121 and the second regions 4122 is a reflecting portion, and the other of the first regions 4121 and the second regions 4122 is an absorbing portion; the adjusting member 42 is formed with a third region 4111 and a fourth region 4112 alternately arranged along the circumferential direction of the thermal insulation structure 4, the third region 4111 is a reflective portion or an absorbing portion, and the fourth region 4112 is a hollow structure.
The fourth area of the adjusting member 412 is a hollow area, and the area of the reflecting portion or the absorbing portion of the insulating member 41 opposite to the heater 3 can be controlled by the relative rotation of the adjusting member 42 and the insulating member 41. The total heat received by the heater 3 is high when the area of the reflecting portion facing the heater 3 is large, and the total heat received by the heater 3 is low when the area of the absorbing portion received by the heater 3 is large.
In some embodiments of the invention, the insulating member 41 is rotatable relative to the adjustment member 42 between a first position and a second position, the fourth region 4112 and the first region 4121 at least partially overlapping when the adjustment member 42 is in the first position relative to the insulating member 41; the fourth zone 4112 and the second zone 4122 at least partially overlap when the adjustment member 42 is in the second position relative to the insulating member 41.
Illustratively, as shown in fig. 3 and 4, the heat-insulating member 41 includes a reflecting portion and an absorbing portion, the adjusting member 42 includes a reflecting portion and a hollow structure, and the hollow structure is opposite to the reflecting portion of the heat-insulating member 41, so that the heat-insulating members 41 opposite to the heater 3 are both reflecting portions, and at this time, the heat of the furnace chamber 11 is highest under the condition that the heating power of the heater 3 is unchanged. As shown in fig. 5, the adjusting member 42 and the heat insulating member 41 are adjusted to rotate relatively, so that the hollow structure corresponds to the adjacent reflecting portion and absorbing portion of the heat insulating member 41, and the area of the reflecting portion of the heat insulating member 41 opposite to the heater 3 is larger than the area of the absorbing portion because the adjusting member 42 is the reflecting portion, at this time, under the condition that the heating power of the heater 3 is unchanged, the heat received by the crucible 2 is higher. As shown in fig. 6 and 7, the insulating member 41 includes a reflecting portion and an absorbing portion, the adjusting member 42 includes an absorbing portion and a hollow structure, the hollow structure corresponds to the reflecting portion of the insulating member 41, the insulating member 41 has an existing reflecting portion opposite to the crucible 2 and also has an absorbing portion, and at this time, the temperature in the furnace chamber 11 is lower than those of the two foregoing types. As shown in fig. 8 and 9, the hollow structure corresponds to the absorption portion of the insulating member 41, and the only absorption portion of the insulating member 41 opposite to the crucible 2 is the lowest temperature of the furnace chamber 11. In addition, as shown in fig. 10, the hollow structure corresponds to the reflective portion and the absorption portion adjacent to the heat insulating member 41, and at this time, the area of the absorption portion of the heat insulating member 41 and the heater 3 is larger than the area of the reflective portion.
In some embodiments of the present invention, as shown in fig. 11, the insulating structure 4 includes: the side thermal insulation structure 41, the side thermal insulation structure 41 is sleeved on the radial outer side of the heating device 3, the side thermal insulation structure 41 is provided with an inner thermal insulation layer 411 and an outer thermal insulation layer 412, the thermal insulation piece 41 is formed into the outer thermal insulation layer 412, and the adjusting piece 42 is formed into the inner thermal insulation layer 411. Thus, the overall structure of the side heat insulating structure 41 is simple, the inner heat insulating layer 411 and the outer heat insulating layer 412 can rotate relatively, the area ratio of the reflecting portion and the absorbing portion is changed, and the temperature of the furnace chamber 11 is finely adjusted from the radially outer direction of the heater 3.
In some embodiments of the present invention, as shown in fig. 12, the insulating structure 4 includes: the bottom insulation structure 42, the bottom insulation structure 42 is arranged in the furnace chamber 11 and below the crucible 2, the bottom insulation structure 42 is provided with an upper insulation layer 421 and a lower insulation layer 422, the insulation member 41 is formed into the lower insulation layer 422, and the regulating member 42 is formed into the upper insulation layer 421. Thus, the bottom insulating structure 42 has a simple overall structure, and the upper insulating layer 421 and the lower insulating layer 422 are rotated relative to each other, so that the area ratio of the reflecting portion and the absorbing portion is changed, and the temperature of the furnace chamber 11 is finely adjusted from below the heater 3.
Since molybdenum has a large heat reflectivity and a small heat absorptivity, graphite has a large heat absorptivity and a small heat reflectivity, the reflecting part is formed into molybdenum, the absorbing part is formed into graphite, and the temperature of the furnace chamber 11 is finely adjusted by adjusting the area of molybdenum contained in the surface of the insulating structure 4 opposite to the crucible 2 and the difference of heat reflection and absorption of the graphite in the circumferential direction of the crucible 2, so that different parts of the insulating structure 4 have different insulating properties.
In some embodiments, the reflective portion may be a molybdenum plate or a molybdenum layer coated on the outer layer of the insulating member 41 or the regulating member 42, and the absorbing portion may be a graphite plate or a graphite layer coated on the outer layer of the insulating member 41 or the regulating member 42.
In some embodiments of the present invention, both the insulating member 41 and the regulating member 42 include: the first connecting portion and the second connecting portion are arranged along the axial direction of the furnace chamber 11 at intervals, and the main body portions are arranged between the first connecting portion and the second connecting portion, the first connecting portion and the second connecting portion are annular, and the main body portions are connected and arranged along the circumferential direction of the first connecting portion and the second connecting portion. Therefore, the reflecting part and the absorbing part can be stably fixed, looseness of the reflecting part and the absorbing part is avoided, stability of the heat insulation structure 4 is guaranteed, and service life of the heat insulation structure 4 is prolonged.
In some embodiments of the present invention, as shown in fig. 1, the single crystal growth furnace 100 further comprises: the guide cylinder is arranged in the furnace chamber 11 in a cylindrical shape and is positioned above the molten soup, and the crystal bar is pulled by the pulling mechanism to pass through the guide cylinder in the vertical direction and extend into the crucible 2. Thus, the single crystal growing furnace 100 has a simple overall structure, is convenient to assemble, and is uniform in crystal growth.
In some embodiments of the present invention, the single crystal growing furnace 100 further comprises: and the driving mechanism is connected with the heat preservation piece 41 and/or the adjusting piece 42 and drives the heat preservation piece 41 and the adjusting piece 42 to rotate relatively. Specifically, the adjusting member 42 may be driven to rotate, the heat insulating member 41 may be driven to rotate, and the adjusting member 42 and the heat insulating member 41 may be driven to rotate relatively at the same time.
In one embodiment of the present invention, crucible 2 comprises quartz crucible 212 and graphite crucible 222.
In one embodiment of the present invention, the single crystal growing furnace 100 further includes: and a transverse magnetic field applying means for applying a transverse magnetic field to the molten steel in the crucible 2. The transverse magnetic field (HMCZ) can inhibit the fluctuation of the surface of molten soup caused by heat convection in the traditional Czochralski method (CZ), inhibit the longitudinal heat convection, and reduce the average temperature of molten soup after the transverse magnetic field is applied. However, in the process of applying the transverse magnetic field, magnetic lines of force of the magnetic field pass through the silicon melt in the quartz crucible in parallel from one end to the other end, and lorentz forces generated by the rotating silicon melt are different from place to place in the circumferential direction, so that the flow and the temperature distribution of the silicon melt are not uniform in the circumferential direction.
The heat preservation piece in the single crystal growth furnace disclosed by the embodiment of the invention is provided with the reflecting part and the absorbing part with different heat reflection coefficients, the heat reflection coefficient of the heat preservation device in the transverse magnetic field direction can be adjusted to be lower than that in the direction vertical to the transverse magnetic field, the temperature distribution in molten soup is adjusted, the crystal growth speed is more uniform, and the crystal growth defect is reduced. Further, for the insulating member including the insulating member 411 and the adjusting member 412 which are rotatable relative to each other according to the embodiment of the present invention, the areas of the reflecting portion and the absorbing portion in the insulating member can be adjusted to correspond to different magnetic field intensities and magnetic field ranges. For example, if the magnetic field strength of the transverse magnetic field is large and the magnetic field range is wide, the rotatable heat insulating member 411 and the adjusting member 412 adjust the heat insulating member so that the area of the absorbing portion is larger than the area of the reflecting portion in the transverse magnetic field direction and the area of the reflecting portion is larger than the area of the absorbing portion in the direction perpendicular to the transverse magnetic field.
A crystal growth method of a single crystal growth furnace 100 according to an embodiment of the second aspect of the present invention, the crystal growth method using the single crystal growth furnace 100 according to the embodiment of the first aspect of the present invention, the crystal growth method comprising: the control adjusting member 42 rotates relative to the heat insulating member 41 to adjust the area of the heat insulating member 41 opposite to the heater 3, thereby adjusting the temperature in the furnace chamber 11
Further, the single crystal growing furnace 100 includes: a transverse magnetic field applying means provided in the furnace chamber 11 for applying a transverse magnetic field to the molten soup in the crucible 2, the crystal growing method further comprising: according to the direction of the transverse magnetic field, the relative positions of the heat insulation structure 4 and the transverse magnetic field are controlled, so that the heat reflection coefficient of the heat insulation structure 4 in the direction parallel to the transverse magnetic field is smaller than that in the direction perpendicular to the transverse magnetic field.
The direction of the transverse magnetic field can be set in the transverse magnetic field applying device. The relative positions of the insulating member 41 and the adjusting member 42 in the insulating structure 4 can be controlled by driving the rotating device, and parameters such as the rotating speed, the rotating angle and the like can be specifically set. Controlling the relative position of the insulating structure 4 and the transverse magnetic field, comprising: controlling the relative positions of the heat preservation piece 41 and the adjusting piece 42 in the heat preservation structure 4; the relative positions of the integral heat-insulating structure 4 and the transverse magnetic field are controlled.
In one embodiment, if the thermal insulation member 41 includes a reflective portion and an absorbing portion, and the adjusting member 42 includes a reflective portion and a hollow portion, the reflective portion in the adjusting member 42 corresponds to the reflective portion in the thermal insulation member 41, and the thermal insulation structure 4 is adjusted to have the absorbing portion disposed in a direction parallel to the transverse magnetic field, and the reflective portion is disposed in a direction perpendicular to the transverse magnetic field.
If the heat preservation member 41 includes a reflecting portion and an absorbing portion, the adjusting member 42 includes an absorbing portion and a hollow portion, and the absorbing portion in the adjusting member 42 corresponds to the absorbing portion in the heat preservation member 41, and the whole heat preservation structure 4 is adjusted, so that the absorbing portion is disposed in a direction parallel to the transverse magnetic field, and the reflecting portion is disposed in a direction perpendicular to the transverse magnetic field.
Further, the temperature difference of the insulating structure 4 manufactured in the circumferential direction of the crucible 2 forms a first vortex in the molten soup in the crucible 2, the transverse magnetic field forms a second vortex in the molten soup in the crucible in the vertical magnetic field direction, and the flow directions of the first vortex and the second vortex are opposite.
In the above, the heat insulation structure disclosed by the invention can form a side heat insulation structure and/or a bottom heat insulation structure, and the side heat insulation structure and the bottom heat insulation structure can influence molten soup in a crucible through the difference of reflection or absorption of heat generated by a heater to generate vortex. The molten soup vortex caused by the heat insulation structure can balance the molten Shang Guoliu caused by the transverse magnetic field, so that the molten soup is more temperature, the stability of a solid-liquid interface is improved, the problem of impurity segregation is avoided, and the problems of uneven crystal growth and uneven oxygen content in the crystal bar are solved.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; the device can be mechanically connected, electrically connected and communicated; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A single crystal growing furnace, comprising:
the furnace body is internally provided with a furnace chamber;
The crucible is arranged in the furnace chamber and used for containing molten soup;
A heater provided in the furnace chamber and surrounding a radially outer side of the crucible;
Insulation construction includes: the heat insulation part and the adjusting part are characterized in that the heat reflection coefficient or the heat absorption coefficient of the adjusting part is different from that of the heat insulation part, and the adjusting part is arranged between the heat insulation part and the heater and can rotate relative to the heat insulation part and is used for adjusting the area of the opposite surface of the heat insulation part and the heater; the heat preservation piece includes: the reflecting parts and the absorbing parts are alternately connected, the heat reflectivity of the reflecting parts is higher than that of the absorbing parts, the heat absorptivity of the absorbing parts is higher than that of the reflecting parts, the relative areas of the reflecting parts and the absorbing parts and the crucible are different, and the areas of the reflecting parts are different;
the adjusting member includes: the reflecting portion or the absorbing portion.
2. The single crystal growing furnace according to claim 1, wherein the insulating member is formed with first regions and second regions alternately arranged in a circumferential direction of the insulating structure, one of the first regions and the second regions being the reflecting portion, and the other of the first regions and the second regions being the absorbing portion; the adjusting piece is formed with a third area and a fourth area which are alternately arranged along the circumferential direction of the heat insulation structure, the third area is the reflecting part or the absorbing part, and the fourth area is a hollow structure.
3. The single crystal growing furnace of claim 2 wherein the insulating member is rotatable relative to the conditioning member between a first position and a second position, the fourth region and the first region at least partially overlapping when the conditioning member is in the first position relative to the insulating member; the fourth region and the second region at least partially overlap when the conditioning element is in the second position relative to the insulating element.
4. The single crystal growing furnace of claim 1, wherein the insulating structure comprises: the side heat preservation structure is sleeved on the radial outer side of the heater.
5. The single crystal growing furnace of claim 1, wherein the insulating structure comprises: the bottom heat preservation structure is arranged in the furnace chamber and positioned below the crucible.
6. The single crystal growing furnace of any one of claims 1 to 5, wherein the reflecting portion is formed of molybdenum and the absorbing portion is formed of graphite.
7. The single crystal growing furnace of any one of claims 1-5, wherein the insulating member and the regulating member each comprise: the furnace chamber comprises a first connecting part, a second connecting part and a plurality of main body parts, wherein the first connecting part and the second connecting part are arranged at intervals along the axial direction of the furnace chamber, the main body parts are arranged between the first connecting part and the second connecting part, the first connecting part and the second connecting part are annular, and the main body parts are arranged along the circumferential direction of the first connecting part and the second connecting part in a connecting mode.
8. The single crystal growth furnace of any one of claims 1-5, further comprising: and the driving mechanism is connected with the heat preservation piece and/or the adjusting piece and drives the heat preservation piece and the adjusting piece to rotate relatively.
9. A crystal growth method of a single crystal growth furnace, characterized by growing a crystal using the single crystal growth furnace according to any one of claims 1 to 8, the crystal growth method comprising:
and controlling the adjusting piece to rotate relative to the heat preservation piece, and adjusting the area of the heat preservation piece opposite to the heater so as to adjust the temperature in the furnace chamber.
10. The crystal growing method according to claim 9, wherein the single crystal growing furnace comprises: a transverse magnetic field applying device arranged in the furnace chamber for applying a transverse magnetic field to the molten soup in the crucible,
The crystal growth method further includes: and controlling the relative positions of the heat insulation structure and the transverse magnetic field according to the direction of the transverse magnetic field, so that the heat reflection coefficient of the heat insulation structure in the direction parallel to the transverse magnetic field is smaller than that in the direction perpendicular to the transverse magnetic field.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1547757A (en) * | 2001-08-23 | 2004-11-17 | 艾克塞利斯技术公司 | System and method of fast ambient switching for rapid thermal processing |
| JP2011057470A (en) * | 2009-09-07 | 2011-03-24 | Mitsubishi Materials Techno Corp | Apparatus and method for producing single crystal silicon |
| CN206616293U (en) * | 2017-04-07 | 2017-11-07 | 山西中聚晶科半导体有限公司 | A kind of kyropoulos prepare the thermal field control system of sapphire crystal equipment |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1547757A (en) * | 2001-08-23 | 2004-11-17 | 艾克塞利斯技术公司 | System and method of fast ambient switching for rapid thermal processing |
| JP2011057470A (en) * | 2009-09-07 | 2011-03-24 | Mitsubishi Materials Techno Corp | Apparatus and method for producing single crystal silicon |
| JP5331626B2 (en) * | 2009-09-07 | 2013-10-30 | 三菱マテリアルテクノ株式会社 | Single crystal silicon manufacturing apparatus and single crystal silicon manufacturing method |
| CN206616293U (en) * | 2017-04-07 | 2017-11-07 | 山西中聚晶科半导体有限公司 | A kind of kyropoulos prepare the thermal field control system of sapphire crystal equipment |
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