CN206616293U - A kind of kyropoulos prepare the thermal field control system of sapphire crystal equipment - Google Patents
A kind of kyropoulos prepare the thermal field control system of sapphire crystal equipment Download PDFInfo
- Publication number
- CN206616293U CN206616293U CN201720360607.XU CN201720360607U CN206616293U CN 206616293 U CN206616293 U CN 206616293U CN 201720360607 U CN201720360607 U CN 201720360607U CN 206616293 U CN206616293 U CN 206616293U
- Authority
- CN
- China
- Prior art keywords
- calandria
- group
- radiation shield
- synapse
- cooling water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model is specifically related to the thermal field control system that a kind of kyropoulos prepare sapphire crystal equipment.Technical problem to be solved is how preferably to realize the temperature control to kyropoulos body of heater heater.The technical scheme used for：A kind of kyropoulos prepare the thermal field control system of sapphire crystal equipment, including first group of calandria, second group of calandria, radiation shield, pre-synapse and heat-insulated Folding-Screen, the tungsten bar that first group of calandria and second group of calandria are respectively distributed by multi-layer annular is constituted, and every layer of tungsten bar is fixedly connected by tungsten ring；Radiation shield is provided that second group of calandria periphery, radiation shield periphery is provided that heat-insulated Folding-Screen, the pre-synapse of multi-ring annular is provided with the inside of the radiation shield, the pre-synapse is identical with radiation shield material and is wholely set, the inside for often enclosing pre-synapse is all evenly distributed with multiple temperature sensors；Multigroup cooling water pipe is provided between radiation shield and heat-insulated Folding-Screen, cooling water branch pipe is also equipped with inside tungsten ring.
Description
Technical field
The utility model belongs to crystal growth equipment field, and in particular to a kind of kyropoulos prepare sapphire crystal equipment
Thermal field control system.
Background technology
Sapphire is commonly called as corundum, with excellent machinery, optics, chemistry, electrology characteristic, and being capable of high temperature resistant, anti-spoke
Penetrate and be widely used in the fields such as wear resistant appliance, optical window, backing material, guided missile dome.
Kyropoulos, also known as Cai's method, KY methods are current large scale, the master of high-quality block sapphire single-crystal batch production
Stream method.Kyropoulos sapphire crystal growing furnace is main by heating system (heating, temperature control), heat-insulation system (heat screen
), vacuum-control(led) system, transmission system (lifting, rotation), cooling system etc. constitute；Crystal preparation process mainly includes changing
Material, long brilliant, annealing and cooling etc., the advantage of this method is that crystal diameter is larger, can grow to apart from 10~20mm of crucible
Place, does not contact so that crystals thermal stress is significantly reduced with crucible, greatly reduces the generation of Crystal Breakup；Long crystalline substance process
Middle crystals thermograde is smaller, can be effectively reduced residual stress, obtains low-dislocation-density monocrystalline；This method lack
Point is that bubble easily occur in crystals, crystal defect, production cycle length and the high power consumption such as rupture.
Existing kyropoulos prepare sapphire heater, the tungsten bar that mostly individual layer circumference is set, the temperature of heater
Spend for overall control, be easier, because temperature control is improper, to cause crystal that melt back phenomenon occurs near freezing interface.Improve
The stability and controllability of heater, are the important leverages for improving sapphire quality.
Utility model content
Technical problem to be solved in the utility model is how preferably to realize to prepare sapphire crystal to kyropoulos
The temperature control of body of heater heater.
Specifically, the technical scheme used for：
A kind of kyropoulos prepare the thermal field control system of sapphire crystal equipment, including first group of calandria, second group add
Hot body, radiation shield, pre-synapse and heat-insulated Folding-Screen, first group of calandria are arranged on the periphery of crucible, second group of calandria
It is arranged at the periphery of first group of calandria；What first group of calandria and second group of calandria were respectively distributed by multi-layer annular
Tungsten bar is constituted, and every layer of tungsten bar is fixedly connected by tungsten ring；Radiation shield, radiation shield are provided that second group of calandria periphery
Periphery is provided that heat-insulated Folding-Screen, and the pre-synapse of multi-ring annular, the pre-synapse and reflection are provided with the inside of the radiation shield
Screen material is identical and is wholely set, and the cross section of pre-synapse is isosceles right angle, and the corresponding height of right-angled apices is dashed forward before the circle
Touch the wall of set radiation shield；Often the inside of circle pre-synapse is all evenly distributed with multiple temperature sensors；Only radiation shield
Side wall and bottom surface are provided with pre-synapse；
Multigroup cooling water pipe is provided between radiation shield and heat-insulated Folding-Screen, cooling water branch pipe is also equipped with inside tungsten ring,
And every group of cooling water pipe correspondingly connects the cooling water branch pipe belonged to inside two to three adjacent tungsten rings of same group of calandria, with
The cooling water branch pipe of same group of cooling water pipe connection is connected in the form of in parallel.
Being applicable kyropoulos of the present utility model and preparing the heater of sapphire crystal equipment has following structure：It is described to add
The Heating body of thermal includes first group of calandria, second group of calandria, and first group of calandria is arranged on the outer of crucible
Enclose, second group of calandria is arranged at the periphery of first group of calandria；First group of calandria tilts calandria by multilayer
Composition, wherein side is located at most last layer and bottom surface is located at the calandria inward slant of one layer of outermost, sideways positioned at basecoat
The calandria for being located at most interior one layer with bottom surface is outward-dipping, and between adjacent two layers of the calandria in side incline direction on the contrary, bottom
Incline direction between two layers adjacent of calandria of face is on the contrary, the inclination angle of all inclination calandrias is 3-5 °；Described second group
Calandria is made up of the calandria of multilayer side vertical and the calandria of multilayer bottom surface level, is respectively arranged at first group of calandria
Side adjacent two layers tilt the outside at calandria interval and bottom surface adjacent two layers tilt the lower section at calandria interval；
The heater being used for also including annular connects the tungsten ring of each layer of calandria, and each layer of calandria is equal
It is fixed on same tungsten ring, one layer of calandria top of first group of heating body side surface the superiors is connected to one by copper flange
Rise, in addition to being linked together except one layer of calandria end of bottom surface innermost layer by tungsten ring, remaining each layer calandria is that middle part is logical
The connection of tungsten ring is crossed, side vertically and in bottom radius is attached between the calandria of overall L-shaped distribution by tungsten filament；
The connected mode of second group of calandria is identical with first group of calandria.
The utility model has the advantages that：The design of the utility model pre-synapse, is added incorgruous to reflection Folding-Screen
Heat reflection structure, add the reflectance uniformity of radiation shield, be conducive to being uniformly distributed for temperature.Due to the position phase of pre-synapse
Also higher by heat sensitivity to protrusion, the temperature that being arranged on the temperature sensor of inside can more timely catch in equipment becomes
Change.It is arranged on the cooling water pipe between heat-insulated Folding-Screen and radiation shield and can absorbs the heat energy of radiation and is preheated, the temperature of cooling water
It can be controlled by flow velocity, and packet type cooling, Neng Goutong are carried out to the calandria --- short tungsten bar --- that layering is set
The temperature of different groups of calandrias of meticulous fine setting control, realizes the Precise control to equipment thermal field.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
In figure, 1 is first group of calandria, and 2 be second group of calandria, and 3 be radiation shield, and 4 be pre-synapse, and 5 be heat-insulated Folding-Screen.
Embodiment
The following examples can make those skilled in the art that the utility model is more fully understood, but not in any way
Limit the utility model.
Embodiment 1
As shown in figure 1, a kind of kyropoulos prepare the thermal field control system of sapphire crystal equipment, including first group of calandria
1st, second group of calandria 2, radiation shield 3, pre-synapse 4 and heat-insulated Folding-Screen 5, first group of calandria 1 are arranged on the periphery of crucible, institute
State the periphery that second group of calandria 2 is arranged at first group of calandria 1；First group of calandria 1 and second group of calandria 2 are divided equally
The tungsten bar not being distributed by multi-layer annular is constituted, and every layer of tungsten bar is fixedly connected by tungsten ring；Set second group of periphery of calandria 2
What is put is radiation shield 3, and the periphery of radiation shield 3 is provided that heat-insulated Folding-Screen 5, and the inner side of the radiation shield 3 is provided with multi-ring annular
Pre-synapse 4, the pre-synapse 4 is identical with the material of radiation shield 3 and is wholely set, and the cross section of pre-synapse 4 is isosceles right angle, right angle
The high wall perpendicular to the radiation shield 3 set by the circle pre-synapse 4 of vertex correspondence；Often the inside of circle pre-synapse 4 is all uniformly divided
It is furnished with multiple temperature sensors；
Multigroup cooling water pipe is provided between radiation shield 3 and heat-insulated Folding-Screen 5, cooling water branch is also equipped with inside tungsten ring
Pipe, and every group of cooling water pipe correspondingly connects the cooling water branch belonged to inside two to three adjacent tungsten rings of same group of calandria
Pipe, the cooling water branch pipe being connected with same group of cooling water pipe is connected in the form of in parallel.
It will be understood by those skilled in the art that above example is only exemplary embodiment, without departing substantially from of the present utility model
In the case of spirit and scope, a variety of changes can be carried out, replaces and changes.
Claims (1)
1. a kind of kyropoulos prepare the thermal field control system of sapphire crystal equipment, it is characterised in that including first group of calandria
（1）, second group of calandria（2）, radiation shield（3）, pre-synapse（4）With heat-insulated Folding-Screen（5）, first group of calandria（1）It is arranged on
The periphery of crucible, second group of calandria（2）It is arranged at first group of calandria（1）Periphery；First group of calandria（1）
With second group of calandria（2）The tungsten bar being respectively distributed by multi-layer annular is constituted, and every layer of tungsten bar is fixedly connected by tungsten ring；
In second group of calandria（2）Periphery is provided that radiation shield（3）, radiation shield（3）Periphery is provided that heat-insulated Folding-Screen（5）, described
Radiation shield（3）Inner side be provided with the pre-synapse of multi-ring annular（4）, the pre-synapse（4）With radiation shield（3）Material is identical and one
Body is set, pre-synapse（4）Cross section be isosceles right angle, right-angled apices it is corresponding height perpendicular to the circle pre-synapse（4）It is set
Radiation shield（3）Wall；Often enclose pre-synapse（4）Inside be all evenly distributed with multiple temperature sensors；Only radiation shield（3）'s
Side wall and bottom surface are provided with pre-synapse（4）, in radiation shield（3）With heat-insulated Folding-Screen（5）Between be provided with multigroup cooling water pipe, in tungsten ring
Inside is also equipped with cooling water branch pipe, and every group of cooling water pipe correspondence connection belongs to adjacent two to three of same group of calandria
Cooling water branch pipe inside tungsten ring, the cooling water branch pipe being connected with same group of cooling water pipe is connected in the form of in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720360607.XU CN206616293U (en) | 2017-04-07 | 2017-04-07 | A kind of kyropoulos prepare the thermal field control system of sapphire crystal equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720360607.XU CN206616293U (en) | 2017-04-07 | 2017-04-07 | A kind of kyropoulos prepare the thermal field control system of sapphire crystal equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206616293U true CN206616293U (en) | 2017-11-07 |
Family
ID=60235655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720360607.XU Expired - Fee Related CN206616293U (en) | 2017-04-07 | 2017-04-07 | A kind of kyropoulos prepare the thermal field control system of sapphire crystal equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206616293U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111850688A (en) * | 2020-07-22 | 2020-10-30 | 哈尔滨秋硕半导体科技有限公司 | Cooling device for inhibiting shoulder shrinkage of sapphire single crystal by kyropoulos method |
| CN115386948A (en) * | 2022-09-26 | 2022-11-25 | 徐州鑫晶半导体科技有限公司 | Single crystal growth furnace and crystal growth method |
-
2017
- 2017-04-07 CN CN201720360607.XU patent/CN206616293U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111850688A (en) * | 2020-07-22 | 2020-10-30 | 哈尔滨秋硕半导体科技有限公司 | Cooling device for inhibiting shoulder shrinkage of sapphire single crystal by kyropoulos method |
| CN115386948A (en) * | 2022-09-26 | 2022-11-25 | 徐州鑫晶半导体科技有限公司 | Single crystal growth furnace and crystal growth method |
| CN115386948B (en) * | 2022-09-26 | 2024-04-19 | 中环领先(徐州)半导体材料有限公司 | Single crystal growth furnace and crystal growth method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203613305U (en) | Carbonized silicon single crystal production device | |
| CN206616293U (en) | A kind of kyropoulos prepare the thermal field control system of sapphire crystal equipment | |
| CN206015144U (en) | Graphite heater for czochralski crystal growing furnace | |
| CN103103604A (en) | Manufacturing method of large-size C-oriented sapphire crystals | |
| CN105088333A (en) | Kyropoulos sapphire crystal growth furnace | |
| CN104250852B (en) | Sapphire crystal growth device and growing method | |
| CN109930200A (en) | Heat shielding and monocrystalline silicon growing furnace structure | |
| TWI755219B (en) | A heat shield device for a single crystal production furnace, a control method and a single crystal production furnace | |
| CN104630889A (en) | Sapphire single growth furnace heat preservation device capable of conveniently regulating temperature gradient | |
| TWI767477B (en) | A heat shield structure for single crystal silicon growth furnace and single crystal silicon growth furnace | |
| CN109930197A (en) | Heat shielding and monocrystalline silicon growing furnace structure | |
| CN204589378U (en) | A kind of convenient sapphire list growth furnace attemperator regulating thermograde | |
| CN102912430A (en) | Sapphire crystal growth equipment and method | |
| CN103695998B (en) | The Kyropoulos furnace thermal field system of loss low in calories | |
| CN206616291U (en) | A kind of kyropoulos prepare the heater of sapphire crystal equipment | |
| CN206616292U (en) | A kind of kyropoulos prepare the device of sapphire crystal | |
| CN106637386A (en) | Single crystal straight-pulling heater capable of increasing crystal pulling rate, and single crystal straight-pulling method | |
| CN216514245U (en) | Graphite crucible for SiC single crystal growth device | |
| CN206562482U (en) | A kind of classification closed-loop control cooling device of sapphire crystallization furnace | |
| CN109280964A (en) | A kind of thermal field structure growing single-crystal silicon carbide | |
| CN109930198A (en) | Heat shielding and monocrystalline silicon growing furnace structure | |
| CN103590098B (en) | The Czochralski method of single crystal furnace heavy punch, single crystal growing furnace, silicon single-crystal and silicon single-crystal | |
| CN209260258U (en) | It is a kind of for making the thermal field single crystal growing furnace of silicon single crystal material | |
| CN108609864B (en) | Film-coated heat-insulation reflective quartz heat shield and preparation method thereof | |
| CN205501450U (en) | Sapphire crystal growth furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200903 Address after: 030060 No.2 machinery Park, Huitong Industrial Park, Jinzhong Development Zone, Shanxi demonstration zone, Jinzhong City, Shanxi Province Patentee after: Chen Hong Address before: 030600 No. 2 machinery Park, Jinzhong Development Zone, Shanxi, Jinzhong Patentee before: SHANXI ZHONGJU JINGKE SEMICONDUCTOR Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171107 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |