CN206616292U - A kind of kyropoulos prepare the device of sapphire crystal - Google Patents
A kind of kyropoulos prepare the device of sapphire crystal Download PDFInfo
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- CN206616292U CN206616292U CN201720360310.3U CN201720360310U CN206616292U CN 206616292 U CN206616292 U CN 206616292U CN 201720360310 U CN201720360310 U CN 201720360310U CN 206616292 U CN206616292 U CN 206616292U
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- calandria
- group
- kyropoulos
- multilayer
- prepare
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Abstract
The utility model belongs to crystal growth equipment field, and in particular to a kind of kyropoulos prepare the device of sapphire crystal.Technical problem to be solved in the utility model is how preferably to realize the temperature control that kyropoulos are prepared with sapphire crystal.The technical scheme used for：A kind of kyropoulos prepare the device of sapphire crystal, including crucible, first group of calandria, second group of calandria, and first group of calandria is provided with the periphery of crucible, and second group of calandria is arranged at the periphery of first group of calandria；First group of calandria tilts calandria by multilayer and constituted；Second group of calandria is made up of the calandria of multilayer side vertical and the calandria of multilayer bottom surface level, is respectively arranged at first group of heating body side surface adjacent two layers and is tilted the outside at calandria interval and the lower section at bottom surface adjacent two layers inclination calandria interval.
Description
Technical field
The utility model belongs to crystal growth equipment field, and in particular to a kind of kyropoulos prepare the dress of sapphire crystal
Put.
Background technology
Sapphire is commonly called as corundum, with excellent machinery, optics, chemistry, electrology characteristic, and being capable of high temperature resistant, anti-spoke
Penetrate and be widely used in the fields such as wear resistant appliance, optical window, backing material, guided missile dome.
Kyropoulos, also known as Cai's method, KY methods are current large scale, the master of high-quality block sapphire single-crystal batch production
Stream method.Kyropoulos sapphire crystal growing furnace is main by heating system (heating, temperature control), heat-insulation system (heat screen
), vacuum-control(led) system, transmission system (lifting, rotation), cooling system etc. constitute；Crystal preparation process mainly includes changing
Material, long brilliant, annealing and cooling etc., the advantage of this method is that crystal diameter is larger, can grow to apart from 10~20mm of crucible
Place, does not contact so that crystals thermal stress is significantly reduced with crucible, greatly reduces the generation of Crystal Breakup；Long crystalline substance process
Middle crystals thermograde is smaller, can be effectively reduced residual stress, obtains low-dislocation-density monocrystalline；This method lack
Point is that bubble easily occur in crystals, crystal defect, production cycle length and the high power consumption such as rupture.
Existing kyropoulos prepare sapphire heater, the tungsten bar that mostly individual layer circumference is set, the temperature of heater
Spend for overall control, be easier, because temperature control is improper, to cause crystal that melt back phenomenon occurs near freezing interface.
Utility model content
Technical problem to be solved in the utility model is how preferably to realize to prepare sapphire crystal to kyropoulos
Temperature control.
Specifically, the technical scheme used for：
A kind of kyropoulos prepare the device of sapphire crystal, including crucible, first group of calandria, second group of calandria, institute
The periphery that first group of calandria is provided with crucible is stated, second group of calandria is arranged at the periphery of first group of calandria；It is described
First group of calandria tilts calandria by multilayer and constituted, wherein side is located at most last layer and bottom surface is located at the heating of one layer of outermost
Body slopes inwardly, and the calandria for being located at most interior one layer positioned at basecoat and bottom surface sideways is outward-dipping, and side it is adjacent two
Incline direction is on the contrary, incline direction is on the contrary, all inclination calandrias between two layers adjacent of calandria of bottom surface between layer calandria
Inclination angle be 3-5 °；Second group of calandria is by the calandria of multilayer side vertical and the calandria of multilayer bottom surface level
Composition, is respectively arranged at outside and the inclination of bottom surface adjacent two layers that first group of heating body side surface adjacent two layers tilts calandria interval
The lower section at calandria interval.
The utility model has the advantages that：The utility model by traditional tungsten bar is replaced with short tungsten bar as
Calandria, side tungsten bar arrangement is changed to the inclined short tungsten bar circumference tilt solid matter of multilayer by tungsten bar circumference solid matter and set, although increase
The connection line of both positive and negative polarity is added, but the design of tungsten bar calandria is tilted by multilayer, the heat energy of each layer is carried out intersecting profit
With while being acted on using the tilt-lock of the superiors' calandria, orlop calandria and bottom outermost layer calandria, by heat energy institute
In the heat space that calandria is constructed, while second group of calandria individually controlled is set outside first group of calandria, to inclining
Oblique heater layer gap heat supply is supplemented and adjusted, and two groups of calandrias can be controlled respectively, to realize to the finer of temperature
Regulation and control, can be prevented effectively from too high or too low for temperature and influence crystal growth or crystal mass.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
In figure, 1 is seed rod, and 2 be sapphire single-crystal, and 3 be sapphire melt, and 4 be crucible, and 5 be first group of calandria, 6
It is radiation shield for second group of calandria, 7,8 be heat-insulated Folding-Screen, and 9 be crucible bearing, and 10 be body of heater shell.
Embodiment
The following examples can make those skilled in the art that the utility model is more fully understood, but not in any way
Limit the utility model.
Embodiment 1
As shown in figure 1, a kind of kyropoulos prepare the device of sapphire crystal, including seed rod 1, crucible 4, first group of heating
Body 5, second group of calandria 6, radiation shield 7, heat-insulated Folding-Screen 8, crucible bearing 9 and body of heater shell 10, first group of calandria 5 are set
There is the periphery of crucible 4, second group of calandria 6 is arranged at the periphery of first group of calandria 5；First group of calandria 5 by
Multilayer tilts calandria composition, slopes inwardly wherein side is located at most last layer and bottom surface positioned at the calandria of one layer of outermost, side
Face is outward-dipping positioned at the calandria that basecoat and bottom surface are located at most interior one layer, and inclines between two layers adjacent of calandria of side
Tilted direction is on the contrary, incline direction is on the contrary, the inclination angle of all inclination calandrias is 3- between two layers adjacent of calandria of bottom surface
5°；Second group of calandria 6 is made up of the calandria of multilayer side vertical and the calandria of multilayer bottom surface level, is set respectively
The outside at calandria interval is tilted in first group of side adjacent two layers of calandria 5 and bottom surface adjacent two layers tilt calandria interval
Lower section.
The extremely slow lifting of seed rod 1, drives sapphire single-crystal 2 to rise, can according to structure design of the present utility model
By the regulation and control respectively of first group of calandria 1 and second group of calandria 6, the temperature finer control to crystal growth is realized,
Prevent crystal growth interface from melt back occur or cooling down too fast.
It will be understood by those skilled in the art that above example is only exemplary embodiment, without departing substantially from of the present utility model
In the case of spirit and scope, a variety of changes can be carried out, replaces and changes.
Claims (1)
1. a kind of kyropoulos prepare the device of sapphire crystal, it is characterised in that including crucible（4）, first group of calandria（5）、
Second group of calandria（6）, first group of calandria（5）It is provided with crucible（4）Periphery, second group of calandria（6）If
It is placed in first group of calandria（5）Periphery；First group of calandria（5）Calandria is tilted by multilayer to constitute, wherein side position
The calandria for being located at one layer of outermost in most last layer and bottom surface slopes inwardly, and is located at most interior one positioned at basecoat and bottom surface sideways
The calandria of layer is outward-dipping, and between adjacent two layers of the calandria in side incline direction on the contrary, two layers adjacent of heating of bottom surface
Incline direction between body is on the contrary, the inclination angle of all inclination calandrias is 3-5 °；Second group of calandria（6）By multilayer side
The vertical calandria in face and the calandria of multilayer bottom surface level composition, are respectively arranged at first group of calandria（5）Sideways adjacent two
Layer tilts the outside at calandria interval and bottom surface adjacent two layers tilt the lower section at calandria interval.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720360310.3U CN206616292U (en) | 2017-04-07 | 2017-04-07 | A kind of kyropoulos prepare the device of sapphire crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720360310.3U CN206616292U (en) | 2017-04-07 | 2017-04-07 | A kind of kyropoulos prepare the device of sapphire crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206616292U true CN206616292U (en) | 2017-11-07 |
Family
ID=60235654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720360310.3U Expired - Fee Related CN206616292U (en) | 2017-04-07 | 2017-04-07 | A kind of kyropoulos prepare the device of sapphire crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206616292U (en) |
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2017
- 2017-04-07 CN CN201720360310.3U patent/CN206616292U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200918 Address after: 030060 No.2 machinery Park, Huitong Industrial Park, Jinzhong Development Zone, Shanxi demonstration zone, Jinzhong City, Shanxi Province Patentee after: Chen Hong Address before: 030600 No. 2 machinery Park, Jinzhong Development Zone, Shanxi, Jinzhong Patentee before: SHANXI ZHONGJU JINGKE SEMICONDUCTOR Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171107 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |