CN219178740U - Infrared sensor - Google Patents
Infrared sensor Download PDFInfo
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- CN219178740U CN219178740U CN202223215285.XU CN202223215285U CN219178740U CN 219178740 U CN219178740 U CN 219178740U CN 202223215285 U CN202223215285 U CN 202223215285U CN 219178740 U CN219178740 U CN 219178740U
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Abstract
The utility model discloses an infrared sensor, and relates to the technical field of sensors. The infrared sensor comprises a substrate, a lens bracket, an infrared sensor chip, a lens, an optical filter and a signal processing circuit; the lens support is arranged on the substrate, and a containing cavity is formed by enclosing the lens support and the substrate; the infrared sensor chip is arranged on the substrate and is positioned in the accommodating cavity; the lens is arranged at the upper end of the lens bracket and is opposite to the infrared sensor chip; the optical filter is arranged on the lens bracket and is positioned between the lens and the infrared sensor chip; the signal processing circuit is arranged on the substrate and is positioned outside the lens bracket, and the signal processing circuit is electrically connected with the infrared sensor chip; the signal processing circuit comprises a signal amplifying module, a filtering module and a processor. According to the infrared sensor provided by the utility model, the lens and the optical filter are arranged, so that infrared stray light and electrostatic interference can be effectively filtered, and the detection accuracy of the infrared sensor chip is improved.
Description
Technical Field
The utility model relates to the technical field of sensors, in particular to an infrared sensor.
Background
Infrared sensors operate by detecting infrared rays emitted from a human body, and are widely used in various electronic devices. The existing infrared sensor is easy to be interfered by various external heat sources and light sources, so that the detection effect is influenced.
Disclosure of Invention
The present utility model aims to solve at least one of the technical problems existing in the prior art. Therefore, the utility model provides the infrared sensor which can improve the detection precision.
An infrared sensor according to an embodiment of the present utility model includes:
a substrate;
the lens bracket is arranged on the substrate, and a containing cavity is formed by surrounding the lens bracket and the substrate;
the infrared sensor chip is arranged on the substrate and is positioned in the accommodating cavity;
the lens is arranged at the upper end of the lens bracket and is opposite to the infrared sensor chip;
the optical filter is arranged on the lens bracket and is positioned between the lens and the infrared sensor chip;
the signal processing circuit is arranged on the substrate and is positioned outside the lens bracket, and the signal processing circuit is electrically connected with the infrared sensor chip; the signal processing circuit comprises a signal amplifying module, a filtering module and a processor, wherein the input end of the signal amplifying module is electrically connected with the infrared sensor chip, the output end of the signal amplifying module is electrically connected with the input end of the filtering module, and the output end of the filtering module is electrically connected with the input end of the processor.
According to some embodiments of the utility model, the signal amplification module comprises:
the input end of the high-pass filter is electrically connected with the infrared sensor chip;
the first input end of the low-noise differential circuit is electrically connected with the output end of the high-pass filter;
the output end of the compensation circuit is electrically connected with the second input end of the low-noise differential circuit;
the input end of the amplifying circuit is electrically connected with the output end of the low-noise differential circuit, the first output end of the amplifying circuit is electrically connected with the input end of the filtering module, the second output end of the amplifying circuit is electrically connected with the input end of the compensating circuit, and the third output end of the amplifying circuit is electrically connected with the third input end of the low-noise differential circuit.
According to some embodiments of the utility model, the high pass filter includes a first capacitor and a first resistor, a first end of the first capacitor is electrically connected to the infrared sensor chip, a second end of the first capacitor is electrically connected to a first end of the first resistor, a second end of the first resistor is grounded, and a connection point between the first capacitor and the first resistor is electrically connected to a first input end of the low noise differential circuit.
According to some embodiments of the utility model, the low noise differential circuit comprises:
the grid electrode of the first MOS tube is electrically connected with a connection point between the first capacitor and the first resistor, the drain electrode of the first MOS tube is connected with a power supply through the second resistor, and the source electrode of the first MOS tube is grounded through the third resistor;
the drain electrode of the second MOS tube is connected with a power supply through a fourth resistor and a fifth resistor which are sequentially connected in series, the source electrode of the second MOS tube is grounded through the third resistor, and the grid electrode of the second MOS tube is electrically connected with the third output end of the amplifying circuit.
According to some embodiments of the utility model, the amplifying circuit includes a first operational amplifier, a positive input end of the first operational amplifier is electrically connected with a drain electrode of the second MOS transistor, a negative input end of the first operational amplifier is electrically connected with the drain electrode of the first MOS transistor, an output end of the first operational amplifier is electrically connected with an input end of the filtering module, an output end of the first operational amplifier is further grounded through a sixth resistor and a seventh resistor which are sequentially connected in series, a connection point between the sixth resistor and the seventh resistor is electrically connected with a gate electrode of the second MOS transistor, and an output end of the first operational amplifier is further electrically connected with an input end of the compensating circuit.
According to some embodiments of the utility model, the compensation circuit comprises:
the positive input end of the second operational amplifier is grounded through a second capacitor, the positive input end of the second operational amplifier is also electrically connected with the output end of the first operational amplifier through an eighth resistor, and the negative input end of the second operational amplifier is grounded through a ninth resistor;
the base of the first triode is electrically connected with the output end of the second operational amplifier through a tenth resistor, the emitter of the first triode is electrically connected with the ninth resistor through a third capacitor, and the collector of the first triode is grounded.
According to some embodiments of the utility model, the inner side wall of the lens holder is provided with a metal film or an oxide film.
According to some embodiments of the utility model, the substrate is provided with an epoxy for coating the lens holder and the signal processing circuit.
According to some embodiments of the utility model, the signal processing circuit further comprises a communication module electrically connected to the processor.
According to some embodiments of the utility model, the signal processing circuit further comprises a memory module electrically connected to the processor.
The infrared sensor provided by the embodiment of the utility model has at least the following beneficial effects: after the infrared rays are gathered through the lens, the interference light source is filtered through the optical filter, and finally, the temperature rise caused by the radiant heat of the infrared rays is converted into a voltage signal by the infrared sensor chip and is sent to the signal processing circuit, so that a detection result is obtained. The optical filter can only allow infrared rays in a required wavelength range to pass through, and filter out other interference light sources and unnecessary infrared stray light, and finally, the infrared sensor chip obtains the infrared rays in the required wavelength range, so that the detection effect of the infrared sensor is improved; the signal processing circuit comprises a signal amplifying module, a filtering module and a processor, wherein the signal amplifying module is used for amplifying signals sent by the infrared sensor chip, and the filtering module is used for filtering noise interference in the amplified signals, so that the processor can acquire low-noise and high-gain signals, and finally, the signal processing result is more accurate.
Additional aspects and advantages of the utility model will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the utility model.
Drawings
The foregoing and/or additional aspects and advantages of the utility model will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
fig. 1 is a schematic structural view of an infrared sensor according to an embodiment of the present utility model;
fig. 2 is a schematic structural view of an infrared sensor according to another embodiment of the present utility model;
FIG. 3 is a schematic diagram illustrating a signal processing circuit according to an embodiment of the present utility model;
fig. 4 is a schematic diagram of a signal amplifying module according to an embodiment of the utility model;
FIG. 5 is a schematic circuit diagram of a signal amplifying module according to an embodiment of the present utility model;
reference numerals:
the substrate 100, the lens holder 200, the receiving chamber 210, the infrared sensor chip 300, the lens 400, the optical filter 500, the signal processing circuit 600, the signal amplifying module 610, the filtering module 620, the processor 630, the communication module 640, the storage module 650, the high pass filter 611, the low noise differential circuit 612, the compensation circuit 613, the amplifying circuit 614, the metal film 700, and the epoxy resin 800.
Detailed Description
Reference will now be made in detail to the present embodiments of the present utility model, examples of which are illustrated in the accompanying drawings, wherein the accompanying drawings are used to supplement the description of the written description so that one can intuitively and intuitively understand each technical feature and overall technical scheme of the present utility model, but not to limit the scope of the present utility model.
In the description of the present utility model, a number means one or more, a number means two or more, and greater than, less than, exceeding, etc. are understood to not include the present number, and above, below, within, etc. are understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present utility model, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present utility model can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
As shown in fig. 1 and 3, the infrared sensor according to the embodiment of the present utility model includes a substrate 100, a lens holder 200, an infrared sensor chip 300, a lens 400, an optical filter 500, and a signal processing circuit 600; the lens support 200 is disposed on the substrate 100, and a receiving cavity 210 is formed between the lens support 200 and the substrate 100; the infrared sensor chip 300 is disposed on the substrate 100 and located in the receiving cavity 210; the lens 400 is disposed at an upper end of the lens holder 200 and opposite to the infrared sensor chip 300; the optical filter 500 is disposed on the lens holder 200 and between the lens 400 and the infrared sensor chip 300; the signal processing circuit 600 is disposed on the substrate 100 and is located outside the lens holder 200, and the signal processing circuit 600 is electrically connected with the infrared sensor chip 300; the signal processing circuit 600 includes a signal amplifying module 610, a filtering module 620 and a processor 630, wherein an input end of the signal amplifying module 610 is electrically connected with the infrared sensor chip 300, an output end of the signal amplifying module 610 is electrically connected with an input end of the filtering module 620, and an output end of the filtering module 620 is electrically connected with an input end of the processor 630.
According to the infrared sensor of the embodiment of the present utility model, after the infrared rays are collected by the lens 400, the interference light source is filtered by the optical filter 500, and then the temperature rise caused by the radiant heat of the infrared rays is converted into a voltage signal by the infrared sensor chip 300, and is sent to the signal processing circuit 600 for signal processing, and finally the detection result is obtained. The optical filter 500 can only allow the infrared rays within the required wavelength range to pass through, and filter out other interference light sources and unwanted infrared stray light, and finally, the infrared sensor chip 300 obtains the infrared rays within the required wavelength range, thereby improving the detection effect of the infrared sensor. The signal processing circuit 600 includes a signal amplifying module 610, a filtering module 620 and a processor 630, where the signal amplifying module 610 is configured to amplify a signal sent by the infrared sensor chip 300, and the filtering module 620 is configured to filter noise interference in the amplified signal, so that the processor 630 can obtain a signal with low noise and high gain, and finally, the signal processing result is more accurate.
As shown in fig. 4 and 5, in some embodiments of the present utility model, the signal amplifying module 610 includes a high pass filter 611, a low noise differential circuit 612, a compensating circuit 613 and an amplifying circuit 614, wherein an input terminal of the high pass filter 611 is electrically connected to the infrared sensor chip 300, an output terminal of the high pass filter 611 is electrically connected to a first input terminal of the low noise differential circuit 612, a second input terminal of the low noise differential circuit 612 is electrically connected to an output terminal of the compensating circuit 613, and an output terminal of the low noise differential circuit 612 is electrically connected to an input terminal of the amplifying circuit 614; a first output of the amplifying circuit 614 is electrically connected to an input of the filtering module 620, a second output of the amplifying circuit 614 is electrically connected to an input of the compensating circuit 613, and a third output of the amplifying circuit 614 is electrically connected to a third input of the low noise differential circuit 612. The high-pass filter 611 is used for filtering low-frequency signals in the signals sent by the infrared sensor chip 300; the low noise differential circuit 612 is used for reducing noise coefficients; the compensation circuit 613 is used for suppressing offset voltage and zero drift generated by the MOS transistor in the low noise differential circuit 612; the amplifying circuit 614 is configured to amplify the signal and send the amplified signal to the filtering module 320 for filtering.
Specifically, as shown in fig. 5, the high-pass filter 611 includes a first capacitor C1 and a first resistor R1, a first end of the first capacitor C1 is electrically connected to the infrared sensor chip 300, a second end of the first capacitor C1 is electrically connected to a first end of the first resistor R1, a second end of the first resistor R1 is grounded, and a connection point between the first capacitor C1 and the first resistor R1 is electrically connected to a first input end (i.e., a gate of the first MOS transistor Q1) of the low-noise differential circuit 612. The low-frequency signal in the signal sent by the infrared sensor chip 300 is filtered out by the high-pass filter 611 composed of the first capacitor C1 and the first resistor R1.
As shown in fig. 5, the low noise differential circuit 612 includes a first MOS transistor Q1, a second MOS transistor Q2, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, and a tenth resistor R10; the grid electrode of the first MOS tube Q1 is electrically connected with a connection point between the first capacitor C1 and the first resistor R1, the drain electrode of the first MOS tube Q1 is connected with a power supply +VCC through a second resistor R2, and the source electrode of the first MOS tube Q1 is grounded through a third resistor R3; the drain electrode of the second MOS transistor Q2 is connected to the power supply +vcc through a fourth resistor R4 and a fifth resistor R5 that are sequentially connected in series, the source electrode of the second MOS transistor Q2 is grounded through a third resistor R3, and the gate electrode of the second MOS transistor is electrically connected to the third output end (i.e., the connection point between the sixth resistor R6 and the seventh resistor R7) of the amplifying circuit 614. The signal of the infrared sensor chip 300 is transmitted to the low noise differential circuit 612 after being subjected to low frequency isolation by the high pass filter 611, and is amplified by the differential amplification of the first MOS tube Q1 and the second MOS tube Q2 and then is output to the amplifying circuit 614 for amplification; the low noise differential circuit 612 can enable the signal amplification module 610 to have a low noise figure.
As shown in fig. 5, the amplifying circuit 614 includes a first operational amplifier U1, a sixth resistor R6 and a seventh resistor R7, the forward input end of the first operational amplifier U1 is electrically connected to the drain electrode of the second MOS transistor Q2, the reverse input end of the first operational amplifier U1 is electrically connected to the drain electrode of the first MOS transistor Q1, the output end of the first operational amplifier U1 is electrically connected to the input end of the filtering module 620, the output end of the first operational amplifier U1 is further grounded through the sixth resistor R6 and the seventh resistor R7, the connection point between the sixth resistor R6 and the seventh resistor R7 is electrically connected to the gate electrode of the second MOS transistor Q2, and the output end of the first operational amplifier U1 is further electrically connected to the input end of the compensating circuit 613. The signal is amplified by the first operational amplifier U1, which facilitates the acquisition and processing of the signal by the subsequent processor 630.
As shown in fig. 5, the compensation circuit 613 includes a second operational amplifier U2, a second capacitor C2, a third capacitor C3, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, and a first triode Q3, where a positive input terminal of the second operational amplifier U2 is grounded through the second capacitor C2, and a positive input terminal of the second operational amplifier U2 is electrically connected to an output terminal of the first operational amplifier U1 through the eighth resistor R8, and a negative input terminal of the second operational amplifier U2 is grounded through the ninth resistor R9; the base of the first triode Q3 is electrically connected with the output end of the second operational amplifier U2 through a tenth resistor R10, the emitter of the first triode Q3 is electrically connected with a ninth resistor R9 through a third capacitor C3, and the collector of the first triode Q3 is grounded. In the low noise differential circuit 612, the first MOS transistor Q1 and the second MOS transistor Q2 may introduce offset voltage and cause zero drift, and the compensation circuit 613 may suppress offset voltage and zero drift.
In some embodiments of the present utility model, the filtering module 620 may use a second-order low-pass filtering circuit to perform low-pass filtering on the signal passing through the signal amplifying module 610, so as to filter noise interference, so that the processor 630 can obtain a high-gain and low-noise signal, and finally improve the signal processing effect.
As shown in fig. 1, in some embodiments of the present utility model, the inner sidewall of the lens holder 200 is provided with a metal film 700 or an oxide film; the metal film 700 or the oxide film can further block infrared stray light and electrostatic interference, so that the infrared sensor chip 300 can efficiently detect infrared rays, and the detection accuracy is improved.
As shown in fig. 2, in some embodiments of the present utility model, an epoxy 800 is provided on the substrate 100 for covering the lens holder 200 and the signal processing circuit 600. The epoxy resin 800 plays a role of fixing the lens holder 200 and the signal processing circuit 600, and protecting the lens holder 200 and the signal processing circuit 600 from interference of stress, moisture, pollutants, etc. from the outside, thereby improving reliability of the infrared sensor.
As shown in fig. 3, in some embodiments of the present utility model, the signal processing circuit 600 further includes a communication module 640, and the communication module 640 is electrically connected to the processor 630. The communication module 640 may adopt a common communication manner such as bluetooth, zigBee, 4G, 5G, etc., so that the processor 630 performs signal interaction with the remote device through the communication module 640, thereby sending a signal processing result to the remote device.
As shown in fig. 3, in some embodiments of the present utility model, the signal processing circuit 600 further includes a memory module 650, the memory module 650 being electrically connected to the processor 630. The memory module 650 may employ a memory chip such as Flash, DRAM, etc. for storing the processing data of the processor 630.
According to the infrared sensor provided by the embodiment of the utility model, the lens 400, the optical filter 500 and the metal film 700/the oxide film are arranged, so that infrared stray light and electrostatic interference can be effectively filtered, and the detection precision of the infrared sensor chip 300 is improved; by providing the signal processing circuit 600, the signal processing effect can be improved.
In the description of the present specification, a description referring to the terms "one embodiment," "further embodiment," "some specific embodiments," or "some examples," etc., means that a particular feature, structure, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present utility model. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present utility model have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the utility model, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. An infrared sensor, comprising:
a substrate;
the lens bracket is arranged on the substrate, and a containing cavity is formed by surrounding the lens bracket and the substrate;
the infrared sensor chip is arranged on the substrate and is positioned in the accommodating cavity;
the lens is arranged at the upper end of the lens bracket and is opposite to the infrared sensor chip;
the optical filter is arranged on the lens bracket and is positioned between the lens and the infrared sensor chip;
the signal processing circuit is arranged on the substrate and is positioned outside the lens bracket, and the signal processing circuit is electrically connected with the infrared sensor chip; the signal processing circuit comprises a signal amplifying module, a filtering module and a processor, wherein the input end of the signal amplifying module is electrically connected with the infrared sensor chip, the output end of the signal amplifying module is electrically connected with the input end of the filtering module, and the output end of the filtering module is electrically connected with the input end of the processor.
2. The infrared sensor of claim 1, wherein the signal amplification module comprises:
the input end of the high-pass filter is electrically connected with the infrared sensor chip;
the first input end of the low-noise differential circuit is electrically connected with the output end of the high-pass filter;
the output end of the compensation circuit is electrically connected with the second input end of the low-noise differential circuit;
the input end of the amplifying circuit is electrically connected with the output end of the low-noise differential circuit, the first output end of the amplifying circuit is electrically connected with the input end of the filtering module, the second output end of the amplifying circuit is electrically connected with the input end of the compensating circuit, and the third output end of the amplifying circuit is electrically connected with the third input end of the low-noise differential circuit.
3. The infrared sensor of claim 2, wherein the high pass filter comprises a first capacitor and a first resistor, a first end of the first capacitor is electrically connected to the infrared sensor chip, a second end of the first capacitor is electrically connected to a first end of the first resistor, a second end of the first resistor is grounded, and a connection point between the first capacitor and the first resistor is electrically connected to a first input of the low noise differential circuit.
4. The infrared sensor of claim 3, wherein the low noise differential circuit comprises:
the grid electrode of the first MOS tube is electrically connected with a connection point between the first capacitor and the first resistor, the drain electrode of the first MOS tube is connected with a power supply through the second resistor, and the source electrode of the first MOS tube is grounded through the third resistor;
the drain electrode of the second MOS tube is connected with a power supply through a fourth resistor and a fifth resistor which are sequentially connected in series, the source electrode of the second MOS tube is grounded through the third resistor, and the grid electrode of the second MOS tube is electrically connected with the third output end of the amplifying circuit.
5. The infrared sensor of claim 4, wherein the amplifying circuit comprises a first operational amplifier, a forward input end of the first operational amplifier is electrically connected with a drain electrode of the second MOS transistor, a reverse input end of the first operational amplifier is electrically connected with the drain electrode of the first MOS transistor, an output end of the first operational amplifier is electrically connected with an input end of the filtering module, an output end of the first operational amplifier is further grounded through a sixth resistor and a seventh resistor which are sequentially connected in series, a connection point between the sixth resistor and the seventh resistor is electrically connected with a gate electrode of the second MOS transistor, and an output end of the first operational amplifier is further electrically connected with an input end of the compensating circuit.
6. The infrared sensor of claim 5, wherein the compensation circuit comprises:
the positive input end of the second operational amplifier is grounded through a second capacitor, the positive input end of the second operational amplifier is also electrically connected with the output end of the first operational amplifier through an eighth resistor, and the negative input end of the second operational amplifier is grounded through a ninth resistor;
the base of the first triode is electrically connected with the output end of the second operational amplifier through a tenth resistor, the emitter of the first triode is electrically connected with the ninth resistor through a third capacitor, and the collector of the first triode is grounded.
7. The infrared sensor of claim 1, wherein an inner sidewall of the lens holder is provided with a metal film or an oxide film.
8. The infrared sensor of claim 1, wherein an epoxy resin for covering the lens holder and the signal processing circuit is provided on the substrate.
9. The infrared sensor of claim 1, wherein the signal processing circuit further comprises a communication module electrically coupled to the processor.
10. The infrared sensor of claim 1, wherein the signal processing circuit further comprises a memory module, the memory module being electrically connected to the processor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223215285.XU CN219178740U (en) | 2022-12-01 | 2022-12-01 | Infrared sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223215285.XU CN219178740U (en) | 2022-12-01 | 2022-12-01 | Infrared sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219178740U true CN219178740U (en) | 2023-06-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202223215285.XU Active CN219178740U (en) | 2022-12-01 | 2022-12-01 | Infrared sensor |
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| Country | Link |
|---|---|
| CN (1) | CN219178740U (en) |
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2022
- 2022-12-01 CN CN202223215285.XU patent/CN219178740U/en active Active
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