CN113779916A - Charge sensitive preamplifier structure and design method - Google Patents
Charge sensitive preamplifier structure and design method Download PDFInfo
- Publication number
- CN113779916A CN113779916A CN202111087596.XA CN202111087596A CN113779916A CN 113779916 A CN113779916 A CN 113779916A CN 202111087596 A CN202111087596 A CN 202111087596A CN 113779916 A CN113779916 A CN 113779916A
- Authority
- CN
- China
- Prior art keywords
- voltage
- temperature
- formula
- mos tube
- bias circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000007613 environmental effect Effects 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000003990 capacitor Substances 0.000 claims description 9
- 239000008186 active pharmaceutical agent Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 230000003044 adaptive effect Effects 0.000 abstract description 13
- 230000005855 radiation Effects 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 4
- 230000006735 deficit Effects 0.000 abstract description 2
- 238000004088 simulation Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002408 directed self-assembly Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
- H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/70—Charge amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Signal Processing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Amplifiers (AREA)
Abstract
The invention provides a charge sensitive preamplifier structure and a design method thereof, belonging to the technical field of semiconductor radiation detection. The bias circuit comprises a bias circuit adaptive to environmental temperature change, and controls the bias voltage VB _ CSA of a feedback MOS tube to output VB _ CSA through a bias circuit moduleTEMPControlling the discharge time of the charge sensitive preamplifier by the grid electrode of the MOS tube; output VB _ CSA of bias circuit adaptive to environmental temperature change when environmental temperature changesTEMPThe discharge time of the charge sensitive preamplifier is kept within the time range required by the system at both low and high temperatures as the temperature changes. The temperature stability problem of using work in deep linear region MOS pipe realization feedback resistance is solved, pulse pile up phenomenon can not appear when making preamplifier low temperature, the ballistic deficit phenomenon can not appear when high temperature, guaranteed precedingThe amplifier maintains a substantially constant discharge time over a wide temperature range.
Description
Technical Field
The invention belongs to the technical field of semiconductor radiation detection, and particularly relates to a charge sensitive preamplifier structure and a design method thereof.
Background
Because the charge sensitive amplifier is optimally matched to the detector and it can accurately detect and amplify weak charge signals generated by the detector, in semiconductor radiation detector systems, the front-end readout circuit typically employs the charge sensitive amplifier to amplify electrical signals generated by the detector.
The structure of the charge sensitive preamplifier is shown in figure 1 and consists of a feedback resistor RfA feedback capacitor CfAnd a gain of A0An inverse proportional core amplifier. Feedback capacitance CfFor converting the charge at the input terminal into a voltage and feeding back a capacitor CfDetermining a charge-to-voltage conversion gain of the charge sensitive preamplifier; feedback resistor RfFor providing a DC bias point for the core amplifier and for the feedback capacitor CfThe charge integrated above is discharged, thereby avoiding the accumulation of charge saturating the output of the preamplifier.
Assuming the gain-bandwidth product (GBW) of the core amplifier is infinite, the output voltage of the charge-sensitive amplifier is compared to the input charge QinThe time domain response of (a) is shown as follows:
wherein tau isf＝Rf·CfAs can be seen from equation (1), when t is 0, the output reaches the maximum value, and when t > 0, the output exponentially decays for CfIs discharged for a discharge time tauf. In the design of charge sensitive amplifiers, CfThe value of (A) is determined according to the requirements of a reading system on a detection energy range and gain, generally below 100fF, and can be well integrated in a chip; to achieve a discharge time of the order of-mus, RfThe value ranges from 100M omega to 10G omega, consisting ofWith a large resistance value, such a resistor is difficult to be integrated on a chip in a standard CMOS process.
RfImplementation in an integrated circuit is generally achieved by active circuitry and MOS transistors operating in deep linear regions. The active circuit introduces large noise in the read path, occupies a large area, and increases the power consumption of the read circuit, so the MOS transistor working in the deep linear region is usually used to realize Rf. Drain current I of MOS tubeDAnd terminal voltage is expressed by the following equation:
where μ is the mobility of an electron or hole, CoxIs the gate oxide capacitance per unit area, W and L are the width and length of the input tube, respectively, VGSGate source voltage, VTHIs a threshold voltage, VDSIs the drain-source voltage.
When V isDS＜＜2(VGS-VTH) When the MOS tube works in a deep linear region, the condition is substituted into the formula (2) to obtain the following formula:
as shown in the formula (3), the MOS transistor operates in a deep linear region, and the drain current IDCan be approximated by VDSThe linear relationship indicates that the channel between the source and the drain can be expressed by a linear resistance as:
as shown in the formula (3), the MOS transistor can control the overdrive voltage (V)GS-VTH) To control the resistance of the resistor.
In the charge sensitive preamplifier, the drain-source electrode of the MOS tube is bridged at the input end and the output end, so that the resistance value of the feedback resistor can be controlled by controlling the voltage of a grid electrode. Reference [1] (reference)
[1]Feedback resistance R of charge-sensitive amplifier in Chao Liu, Xuan Luo, Ran Zheng, Jia Wang, Xiaoomin Wei, Feifei Xue, and Yann Hu, "A low noise APD readout ASIC for electronic circuitry meter in HIEPA," nucleic Instrument in methods in Physics Research, A, Vol.985.2021.)fThe method is realized by using an NMOS tube working in a deep linear region, the grid voltage of the MOS tube is controlled by external voltage, and output waveforms with different discharge time can be obtained by adjusting the external voltage. However, the circuit has the obvious disadvantage that when the temperature is changed from-40 ℃ to 120 ℃, the threshold voltage V of the NMOS tubeTHA change of negative temperature coefficient occurs when VGSWhen fixed, the resistance R between the drain and the source is known from the formula (4)onThe change of negative temperature coefficient can occur along with the temperature, namely when the ambient temperature is low, RonThe discharge time is increased by increasing the value, and R is increased when the ambient temperature is highonThe smaller the value, the smaller the discharge time. Too much discharge time can cause signal stacking and saturation at the output when the charge sensitive preamplifier processes continuous signals; too small a discharge time increases noise of the charge sensitive amplifier and causes a ballistic deficit phenomenon.
Disclosure of Invention
To overcome the above-mentioned deficiencies of the prior art, the present invention provides a charge sensitive preamplifier structure and design method.
In order to achieve the above purpose, the invention provides the following technical scheme:
a charge sensitive preamplifier structure, comprising:
the amplifier is used for amplifying the electric signal generated by the detector, the input end of the amplifier is connected with the output end of the detector, and the output end of the amplifier outputs the amplified electric signal;
the MOS tube is connected with the amplifier in parallel, works in a deep linear region and is used for providing a direct current bias point for the amplifier;
feedback capacitance CfIn parallel with the amplifier, the feedback capacitor CfFor converting the charge generated by the detector into a voltage;
the bias circuit comprises a plurality of diodes connected in series or bipolar transistors connected in parallel, the input end of the bias circuit is connected with an input voltage VB _ CSA, and the output end of the bias circuit is connected with an MOS (metal oxide semiconductor) tube and is used for providing a grid control voltage of the MOS tube and stabilizing the discharge time by controlling the grid voltage of the MOS tube.
The design method of the charge sensitive preamplifier comprises the following steps:
determining the relation between the grid control voltage and the discharge time of the MOS tube, and expressing the relation through a temperature coefficient;
the circuit condition of stable discharge time is obtained through the temperature coefficient, and the bias circuit is set according to the condition.
Preferably, the specific step of obtaining the temperature coefficient comprises:
the temperature characteristic of the carrier mobility mu of the MOS transistor is expressed as,
μ＝KμT-1.5 (5)
the threshold voltage V of the MOS tubeTHIs expressed as the temperature characteristic of (a) is,
VTH(T)＝VTH(T0)-α(T-T0) (6)
the drain current I of the MOS tubeDAnd drain-source voltage VDSThe linear relationship of (a) is expressed as,
the relation between the drain and the source of the MOS tube is expressed by linear resistance, as shown in formula (4),
combining the formula (4), the formula (5) and the formula (6), when the environmental temperature T changes, Ron(T)＝Ron(T0) The gate-source voltage V of the MOS transistorGSExpressed as:
simulating a temperature relationship by an electronic design automation tool according to formula (7);
wherein, KuAnd alpha depends on the doping concentration of the substrate and the impurity implantation amount in the manufacturing process, and alpha is equal to 2.3 mV/DEG C, T0Is the absolute temperature of room temperature, T is the absolute temperature of the environment, the range of T is 200-400K, CoxIs the gate oxide capacitance per unit area, W and L are the width and length of MOS transistor, respectivelyGSIs the gate source voltage of the MOS tube.
Preferably, the step of obtaining the circuit condition comprises:
deriving equation (8) from T in equation (7) as follows,
calculating the base-emitter voltage of the bipolar transistor or the forward bias voltage of the diode as shown in equation (9),
the output voltage VB _ CSA of the bias circuit is obtained by combining the formula (3), the formula (4), the formula (8) and the formula (9)TEMPWhen the negative temperature coefficient of (2) satisfies the following formula (10), the discharge time is stable,
wherein n is the number of said bipolar transistors in parallel or said diodes in series, VBEIs the base-emitter voltage of the bipolar transistor or the forward bias voltage of the diode, m-1.5, VTkT/q, k is Boltzmann constant, EgIs the band gap energy of silicon and q isThe amount of the element charge.
The structure and the design method of the charge sensitive preamplifier provided by the invention have the following beneficial effects: compared with the charge sensitive preamplifier in the document [1], the charge sensitive preamplifier structure adopting the self-adaptive ambient temperature change can provide the grid control voltage changing along with the temperature for the MOS feedback tube due to the bias circuit adapting to the ambient temperature change, thereby ensuring that the preamplifier keeps basically constant discharge time in a wide temperature range and greatly improving the temperature stability of the semiconductor radiation detector system.
Drawings
In order to more clearly illustrate the embodiments of the present invention and the design thereof, the drawings required for the embodiments will be briefly described below. The drawings in the following description are only some embodiments of the invention and it will be clear to a person skilled in the art that other drawings can be derived from them without inventive effort.
FIG. 1 is a prior art charge sensitive preamplifier architecture of the present invention;
FIG. 2 is a structure of a charge sensitive preamplifier according to embodiment 1 of the invention;
FIG. 3 is a simulation diagram of a charge sensitive preamplifier according to embodiment 1 of the present invention;
FIG. 4 is a charge sensitive preamplifier topology according to embodiment 1 of the invention;
fig. 5 is a bias circuit topology structure of adaptive environmental temperature variation implemented by using diodes according to embodiment 1 of the present invention;
fig. 6 is a bias circuit topology for adapting to the ambient temperature variation implemented by using bipolar transistors according to embodiment 1 of the present invention.
Detailed Description
In order that those skilled in the art will better understand the technical solutions of the present invention and can practice the same, the present invention will be described in detail with reference to the accompanying drawings and specific examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
Example 1
The charge sensitive preamplifier structure provided by the invention is added with a bias circuit module adaptive to the environmental temperature change on the basis of fig. 1 as shown in fig. 2, and realizes a feedback resistor R through an MOS tube working in a deep linear regionfThe functions of (a) specifically include: the amplifier is used for amplifying the electric signal generated by the detector, the input end of the amplifier is connected with the output end of the amplifying detector, and the output end of the amplifier outputs the amplified electric signal; the MOS tube is connected with the amplifier in parallel, works in a deep linear region and is used for providing a direct current bias point for the amplifier; feedback capacitance CfIn parallel with the amplifier, a feedback capacitor CfConverting the charge generated by the amplification detector into a voltage; the bias circuit comprises a plurality of diodes connected in series or bipolar transistors connected in parallel, the input end of the bias circuit is connected with an input voltage VB _ CSA, and the output end of the bias circuit is connected with the MOS tube and is used for providing a grid control voltage of the MOS tube and stabilizing the discharge time by controlling the grid voltage of the MOS tube.
Wherein the feedback capacitor CfDetermining a charge-to-voltage conversion gain of the charge sensitive preamplifier; MOS transistor pair feedback capacitor CfThe charge of the upper integration is discharged, avoiding saturation of the output of the preamplifier. The bias voltage VB _ CSA of the MOS tube is output VB _ CSA through the bias circuit module adaptive to the environmental temperature changeTEMPControlling the discharge time of the charge sensitive preamplifier by the grid electrode of the MOS tube; VB _ CSA (visual basic control System) with temperature change output of bias circuit adaptive to environment temperature change when environment temperature changesTEMPThe discharge time of the charge sensitive preamplifier is kept within the time range required by the system at both low and high temperatures.
Compared with the charge sensitive preamplifier in the document [1], the charge sensitive preamplifier structure adopting the self-adaptive ambient temperature change can provide the grid control voltage changing along with the temperature for the MOS tube due to the bias circuit adapting to the ambient temperature change, thereby ensuring that the preamplifier keeps basically constant discharge time in a wide temperature range and greatly improving the temperature stability of the semiconductor radiation detector system.
The structural design method of the charge sensitive preamplifier comprises two processes: determining the temperature relation between the grid control voltage of the MOS tube and the discharge time of the charge sensitive amplifier, and expressing the relation through a temperature coefficient; the circuit condition of stable discharge time of the charge sensitive preamplifier is obtained through the temperature coefficient, and the bias circuit adaptive to the environmental temperature change is arranged according to the circuit condition.
Determining the resistance R between the drain and the source of the MOS tubeonCoefficient with temperature change: according to MOS transistor carrier mobility mu and threshold voltage VTHTemperature dependence and resistance R between drain and source when MOS tube is operated in deep linear regiononAnd gate source voltage VGSDetermining the temperature relation between the grid control voltage of the MOS tube and the discharge time of the charge sensitive amplifier.
The specific calculation process is as follows:
when the MOS tube works in a deep linear region, the drain current I of the MOS tubeDCan be approximated by a drain-source voltage VDSAs shown in equation (3),
the channel between the drain and the source of the MOS tube is expressed by a linear resistor as shown in formula (4),
in order to accurately determine the resistance R between the drain electrode and the source electrode of the MOS tubeonThe coefficient of variation with temperature, as shown by equation (4), requires knowledge of the carrier mobility μ and threshold voltageVTH versus temperature.
The temperature characteristic of the carrier mobility mu of the MOS tube is shown in the formula (5),
μ＝KμT-1.5 (5)。
MOS transistor threshold voltage VTHIs shown in formula (6),
VTH(T)＝VTH(T0)-α(T-T0) (6)。
as can be seen from the formulas (4), (5) and (6), R is ensuredon(T)＝Ron(T0) Then the gate-source voltage V of MOS tubeGSThe following formula (7) should be satisfied:
the drain-source electrode of the MOS tube is bridged at the input end and the output end, so that the resistance value of the feedback resistor is controlled by controlling the grid voltage, the formula (7) shows that when the ambient temperature T changes, the grid control voltage of the MOS tube correspondingly changes along with the temperature to stabilize the discharge time of the charge sensitive amplifier, and the accurate temperature relation between the grid control voltage of the MOS tube and the discharge time of the charge sensitive amplifier is simulated by an electronic design automation tool.
Wherein, KμAnd alpha depends on the doping concentration of the substrate and the impurity implantation amount in the manufacturing process, and alpha is equal to 2.3 mV/DEG C, T0Is the absolute temperature of the room temperature, T is the absolute temperature of the environment, in this embodiment, T ranges from 200K to 400K, equations (5) and (6) are valid in the range of 200K to 400K, CoxIs the gate oxide capacitance per unit area, W and L are the width and length of MOS transistor, respectivelyGSIs the gate source voltage of the MOS tube.
The specific steps of obtaining the circuit condition of the discharge time stability of the charge sensitive preamplifier through the temperature coefficient comprise: deriving formula (8) from T in formula (7); the output voltage VB _ CSA of the bias circuit is obtained by combining the formula (3), the formula (4), the formula (8) and the formula (9)TEMPWhen the negative temperature coefficient of (2) satisfies the formula (10), the discharge time of the charge sensitive preamplifier is stable.
The design of the bias circuit adaptive to the environmental temperature change is based on the formula (7), therefore, the T in the formula (7) is derived to the formula (8) as follows,
from the formula (8), VGSIs the change of the negative temperature coefficient to obtain the output voltage VB _ CSA of the bias circuit adaptive to the change of the environmental temperatureTEMPIs the change of negative temperature coefficient, and ensures the output voltage VB _ CSA of the bias circuitTEMPThe relation of the gate control voltage of the MOS transistor changing with the temperature is consistent with the relation of the gate control voltage of the MOS transistor changing with the temperature, and the base electrode-emitter voltage of the bipolar transistor or the forward bias voltage of the diode has a negative temperature coefficient, as shown in an equation (9):
combining the formula (3), the formula (4), the formula (8) and the formula (9), the output voltage VB _ CSA of the bias circuit if the self-adaptive ambient temperature changesTEMPWhen the negative temperature coefficient of (2) satisfies the following equation (10), the resistance R between the source and the drain of the MOS transistoronThe value of (a) hardly changes with temperature, i.e. the discharge time of the charge sensitive preamplifier does not change with ambient temperature.
Wherein, VBEIs the base-emitter voltage of a bipolar transistor or the forward bias voltage of a diode, m-1.5, VTkT/q, k is Boltzmann constant, EgIs the band gap energy of silicon, q is the amount of elementary charge; where n is the number of bipolar transistors in parallel or diodes in series.
A bias circuit that satisfies the adaptive ambient temperature variation of equation (10) can also be implemented using a negative temperature coefficient of resistance network, but the bias circuit needs a tradeoff in area and power consumption. In addition, the on-chip integrated resistors have large manufacturing accuracy deviation, which increases the design difficulty of the bias circuit adaptive to the environmental temperature change.
The specific implementation process of the invention is as follows:
the first step is as follows: a specific implementation of the charge sensitive preamplifier module is shown in fig. 4. The core circuit of the cascode amplifier is a single-end input split-leg (split-leg) structure cascode amplifier. Because the mobility of electrons is greater than that of holes, under the condition of same size and same power consumption, larger transconductance (g) can be realized by adopting the NMOS input tubem) Thereby achieving higher gain and speed. The width W and length L of the input tube M0 of the preamplifier are optimized according to the specific detector capacitance; feedback capacitance CfThe value of (a) is selected according to the overall gain of the channel and the layout area compromise of the capacitor; feedback resistor RfThe method is realized by an NMOS tube which works in a deep linear region.
The second step is that: the specific implementation manner of the bias circuit adaptive to the environmental temperature change includes two types, as shown in fig. 5, implemented by using a negative temperature coefficient relationship of a diode forward bias voltage, and as shown in fig. 6, implemented by using a negative temperature coefficient relationship of a base-emitter voltage of a bipolar transistor. The number of series diodes and parallel bipolar transistors is determined according to equation (10), and the input voltage VB _ CSA is determined according to the discharge time of the charge-sensitive front discharge at room temperature.
The simulation result of the charge sensitive preamplifier adaptive to the environmental temperature change when the charge is 10fC is shown in FIG. 3, VB _ CSA is set to be 1.6V under the condition of room temperature, and the discharge time of the preamplifier can be ensured to be about 70 mu s. As shown in fig. 3, the solid line sequentially represents the output waveform of the preamplifier from-40 to 120 ℃ when the ambient temperature changes, and the temperature interval is 10 ℃; the dotted lines represent simulation results of the circuit of document [1], the uppermost dotted line being a waveform of-40 ℃ in ambient temperature, and the lowermost dotted line being a waveform of 120 ℃ in ambient temperature. As can be seen from FIG. 3, the invention can ensure that the discharge time of the charge sensitive preamplifier is kept at about 70 μ s at-40 to 120 ℃; the discharge time of the charge sensitive preamplifier in the document [1] is far more than 70 mus at the ambient temperature of-40 ℃, the direct current operating point of the circuit is abnormal, and the discharge time is 1 mus at 120 ℃. Compared with the charge sensitive preamplifier in the document [1], the temperature stability of the preamplifier is greatly improved, so that the preamplifier does not have the pulse stacking phenomenon at low temperature and the ballistic loss phenomenon at high temperature. The design method of the charge sensitive preamplifier circuit suitable for the radiation detection front-end reading system is provided, the problem of temperature stability of a feedback resistor achieved by using an MOS tube working in a deep linear region is solved, and the charge sensitive preamplifier can adapt to environmental temperature change in a self-adaptive mode to achieve better temperature stability.
The above embodiments are only preferred embodiments of the present invention, and the scope of the present invention is not limited thereto, and any simple changes or equivalent substitutions of the technical solutions that can be obviously obtained by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Claims (4)
1. A charge sensitive preamplifier structure, comprising:
the amplifier is used for amplifying the electric signal generated by the detector, the input end of the amplifier is connected with the output end of the detector, and the output end of the amplifier outputs the amplified electric signal;
the MOS tube is connected with the amplifier in parallel, works in a deep linear region and is used for providing a direct current bias point for the amplifier;
feedback capacitance CfIn parallel with the amplifier, the feedback capacitor CfFor converting the charge generated by the detector into a voltage;
the bias circuit comprises a plurality of diodes connected in series or bipolar transistors connected in parallel, the input end of the bias circuit is connected with an input voltage VB _ CSA, and the output end of the bias circuit is connected with an MOS (metal oxide semiconductor) tube and is used for providing a grid control voltage of the MOS tube and stabilizing the discharge time by controlling the grid voltage of the MOS tube.
2. A method of designing a charge sensitive preamplifier, comprising the steps of:
determining the relation between the grid control voltage and the discharge time of the MOS tube, and expressing the relation through a temperature coefficient;
the circuit condition of stable discharge time is obtained through the temperature coefficient, and the bias circuit is set according to the condition.
3. The method of claim 2, wherein the step of obtaining the temperature coefficient comprises:
the temperature characteristic of the carrier mobility mu of the MOS transistor is expressed as,
μ＝KμT-1.5 (5)
the threshold voltage V of the MOS tubeTHIs expressed as the temperature characteristic of (a) is,
VTH(T)＝VTH(T0)-α(T-T0) (6)
the drain current I of the MOS tubeDAnd drain-source voltage VDSThe linear relationship of (a) is expressed as,
the relation between the drain and the source of the MOS tube is expressed by linear resistance, as shown in formula (4),
combining the formula (4), the formula (5) and the formula (6), when the environmental temperature T changes, Ron(T)＝Ron(T0) The gate-source voltage V of the MOS transistorGSExpressed as:
simulating a temperature relationship by an electronic design automation tool according to formula (7);
wherein, KμAnd alpha depends on the doping concentration of the substrate and the impurity implantation amount in the manufacturing process, and alpha is equal to 2.3 mV/DEG C, T0Is the absolute temperature of room temperature, T is the absolute temperature of the environment, the range of T is 200-400K, CoxIs the gate oxide capacitance per unit area, W and L are the width and length of MOS transistor, respectivelyGSIs the gate source voltage of the MOS tube.
4. The method of claim 3, wherein the step of deriving circuit conditions comprises:
deriving equation (8) from T in equation (7) as follows,
calculating the base-emitter voltage of the bipolar transistor or the forward bias voltage of the diode as shown in equation (9),
the output voltage VB _ CSA of the bias circuit is obtained by combining the formula (3), the formula (4), the formula (8) and the formula (9)TEMPWhen the negative temperature coefficient of (2) satisfies the following formula (10), the discharge time is stable,
wherein n is the number of said bipolar transistors in parallel or said diodes in series, VBEIs the base-emitter voltage of the bipolar transistor or the forward bias voltage of the diode, m-1.5, VTkT/q, k is Boltzmann constant, EgIs the bandgap energy of silicon and q is the amount of elementary charge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111087596.XA CN113779916A (en) | 2021-09-16 | 2021-09-16 | Charge sensitive preamplifier structure and design method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111087596.XA CN113779916A (en) | 2021-09-16 | 2021-09-16 | Charge sensitive preamplifier structure and design method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113779916A true CN113779916A (en) | 2021-12-10 |
Family
ID=78851438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111087596.XA Pending CN113779916A (en) | 2021-09-16 | 2021-09-16 | Charge sensitive preamplifier structure and design method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113779916A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116027840A (en) * | 2023-02-21 | 2023-04-28 | 成都明夷电子科技有限公司 | Adjusting circuit, resistor and electronic equipment |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990021111A (en) * | 1997-08-30 | 1999-03-25 | 김영환 | Temperature compensation reference voltage generator |
| US20030112054A1 (en) * | 2001-12-18 | 2003-06-19 | Mitsubishi Denki Kabushiki Kaisha | Phase correction circuit for transistor using high-frequency signal |
| CN1585126A (en) * | 2003-07-30 | 2005-02-23 | 松下电器产业株式会社 | Semiconductor integrated circuit and signal sending/receiving system |
| CN108512536A (en) * | 2018-07-10 | 2018-09-07 | 上海艾为电子技术股份有限公司 | A kind of analog switch with constant conduction resistance |
| CN108768161A (en) * | 2018-05-17 | 2018-11-06 | 深圳市芯澜电子技术有限公司 | A kind of built-in fixation turn-on time circuit compensated |
| CN110798156A (en) * | 2018-08-02 | 2020-02-14 | 立积电子股份有限公司 | Impedance circuit and bias circuit |
| CN112564638A (en) * | 2020-12-28 | 2021-03-26 | 陕西烽火电子股份有限公司 | Static working point temperature compensation circuit of high-efficiency MOS tube power amplifier |
| CN113359932A (en) * | 2021-06-21 | 2021-09-07 | 东南大学 | Constant transconductance biasing circuit |
-
2021
- 2021-09-16 CN CN202111087596.XA patent/CN113779916A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990021111A (en) * | 1997-08-30 | 1999-03-25 | 김영환 | Temperature compensation reference voltage generator |
| US20030112054A1 (en) * | 2001-12-18 | 2003-06-19 | Mitsubishi Denki Kabushiki Kaisha | Phase correction circuit for transistor using high-frequency signal |
| CN1585126A (en) * | 2003-07-30 | 2005-02-23 | 松下电器产业株式会社 | Semiconductor integrated circuit and signal sending/receiving system |
| CN108768161A (en) * | 2018-05-17 | 2018-11-06 | 深圳市芯澜电子技术有限公司 | A kind of built-in fixation turn-on time circuit compensated |
| CN108512536A (en) * | 2018-07-10 | 2018-09-07 | 上海艾为电子技术股份有限公司 | A kind of analog switch with constant conduction resistance |
| CN110798156A (en) * | 2018-08-02 | 2020-02-14 | 立积电子股份有限公司 | Impedance circuit and bias circuit |
| CN112564638A (en) * | 2020-12-28 | 2021-03-26 | 陕西烽火电子股份有限公司 | Static working point temperature compensation circuit of high-efficiency MOS tube power amplifier |
| CN113359932A (en) * | 2021-06-21 | 2021-09-07 | 东南大学 | Constant transconductance biasing circuit |
Non-Patent Citations (1)
| Title |
|---|
| CHAO LIU等: "A low noise APD readout ASIC for electromagnetic calorimeter in HIEPA", NUCLEAR INST. ANDMETHODS IN PHYSICS RESEARCH, A, vol. 985, pages 1 - 6 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116027840A (en) * | 2023-02-21 | 2023-04-28 | 成都明夷电子科技有限公司 | Adjusting circuit, resistor and electronic equipment |
| CN116027840B (en) * | 2023-02-21 | 2023-05-23 | 成都明夷电子科技有限公司 | Adjusting circuit, resistor and electronic equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102325240B (en) | Photoelectric conversion apparatus | |
| US9483069B2 (en) | Circuit for generating bias current | |
| JP2014216349A (en) | Photoelectric conversion device | |
| CN104113293A (en) | High-gain and low-noise differential trans-impedance amplifier | |
| US20170170787A1 (en) | Apparatus and methods for power enhancement of self-biased distributed amplifiers with gate bias networks | |
| JP2011187647A (en) | Photoelectric conversion apparatus | |
| O'Connor et al. | CMOS preamplifier with high linearity and ultra low noise for X-ray spectroscopy | |
| KR101152601B1 (en) | Uni-directional current detecting circuit using second-generation current conveyor | |
| CN113779916A (en) | Charge sensitive preamplifier structure and design method | |
| US9927469B2 (en) | Log-linear power detector | |
| Manghisoni et al. | Instrumentation for noise measurements on CMOS transistors for fast detector preamplifiers | |
| US20110169551A1 (en) | Temperature sensor and method | |
| KR20050034596A (en) | Amplification circuit | |
| JP2006067166A (en) | Amplifying device | |
| US11321543B2 (en) | Logarithmic amplifier | |
| Beikahmadi et al. | A low-power continuous-reset CMOS charge-sensitive amplifier for the readout of solid-state radiation detectors | |
| CN210431361U (en) | Input buffer, differential input buffer and integrated circuit | |
| CN113595510A (en) | Low-noise charge sensitive preamplifier and method for reducing input capacitance | |
| JP6240010B2 (en) | amplifier | |
| CN113821069A (en) | Source follower, interface circuit and electronic equipment | |
| US8648641B2 (en) | Voltage controlled variable resistor suitable for large scale signal application | |
| CN105897208A (en) | High-gain, self-bias and no-inductor low-noise amplifier | |
| Giroletti et al. | Charge Sensitive Amplifiers with Bi-and Trilinear Signal Compression Feature for LGAD Detectors | |
| JP2006286182A (en) | Sensing circuit | |
| JPH0774553A (en) | Amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |