CN112564638A - Static working point temperature compensation circuit of high-efficiency MOS tube power amplifier - Google Patents
Static working point temperature compensation circuit of high-efficiency MOS tube power amplifier Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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Abstract
The invention discloses a static working point temperature compensation circuit of a high-efficiency MOS tube power amplifier, which comprises: the temperature sensing compensation biasing circuit and the isolation output circuit; aiming at the special high-efficiency application requirements, namely under the condition of strictly limiting the power consumption of the amplifier and greatly changing the temperature of the use environment, the temperature change characteristics of static voltages of the triode and the FET field effect transistor are utilized for compensation and amplification, and an integrated operational amplifier is adopted for isolated output, so that variable static working point voltage with temperature compensation is provided for the MOS field effect transistor, the compensation control of output power during temperature change is realized, and the adverse effect caused by deep ALC loop control is reduced.
Description
Technical Field
The invention belongs to the technical field of communication equipment, and particularly relates to a static operating point temperature compensation circuit of a high-efficiency MOS tube power amplifier.
Background
The power amplifier is an important component of communication equipment, and the main requirement of the power amplifier is that the output power of the power amplifier fluctuates within a certain range when the temperature of a use environment changes; meanwhile, in special application, the conversion efficiency of a power supply is also an evaluation index.
The static operating point of the MOS transistor power amplifier is generally set to be a constant voltage, and the static operating current of the power amplifier tube changes with temperature under different temperature conditions, and the output power of the power amplifier tube also fluctuates greatly, so that the output power of the power amplifier tube generally adopts a closed-loop control mode of automatic Level control alc (automatic Level control), specifically, the total attenuation (amplification) amount of a variable attenuator (amplifier) of an amplification link of the power amplifier tube is adjusted by detecting an output power signal, and the output power of the amplifier is further reduced, as shown in fig. 1, a schematic block diagram, and this mode can meet most of the use requirements. However, when the power consumption of the amplifier is strictly limited and the temperature change of the use environment is large, the depth of ALC loop control is increased, which will have an adverse effect on the power conversion efficiency.
Disclosure of Invention
In order to solve the above problems, an object of the present invention is to provide a quiescent point temperature compensation circuit for a high efficiency MOS transistor power amplifier, which reduces the influence of temperature on the output power of the power amplifier and reduces the influence of automatic level control on the power conversion efficiency by using a temperature compensation method.
In order to achieve the above object, the present invention adopts the following technical solutions.
High-efficient MOS manages power amplifier's quiescent operating point temperature compensation circuit, input voltage is connected to its one end, and MOS power amplifier tube is connected to the other end, temperature compensation circuit includes: the temperature sensing compensation bias circuit comprises a resistor R5, a resistor R8, a resistor R9, a triode V1 and a voltage regulating unit;
the emitter of the triode V1 is grounded, the collector of the triode V1 is connected with one end of a resistor R5, and the other end of the resistor R5 is connected with the voltage regulating unit;
one end of the voltage regulating unit is connected with an input voltage, and the other end of the voltage regulating unit is grounded;
one end of the resistor R8 is connected with the base electrode of the triode V1, and the other end of the resistor R8 is connected with the collector electrode of the triode V1;
one end of the resistor R9 is connected with the base electrode of the triode V1, and the other end of the resistor R9 is connected with the emitter of the triode V1;
the isolated output circuit comprises a resistor R7, a resistor R10, an integrated operational amplifier N1A and a magnetic bead E1;
one end of the resistor R7 is connected to the output voltage of the temperature sensing compensation bias circuit, the other end of the resistor R7 is connected to the positive end of the integrated operational amplifier N1A, and the voltage at the output end of the integrated operational amplifier N1A is connected to the gate of the MOS power amplifier tube through the magnetic bead E1;
the resistor R10 is connected between the inverting terminal and the output terminal of the integrated operational amplifier N1A.
Furthermore, the voltage regulating unit comprises a resistor R1, a resistor R2, a resistor R3 and a potentiometer RP1, two fixed ends of the potentiometer RP1 are respectively connected with one ends of a resistor R2 and a resistor R3, the other end of the resistor R2 is connected with an input voltage, and the other end of the resistor R3 is grounded; the free end of the potentiometer RP1 is connected with a resistor R5; two fixed ends of the potentiometer RP1 are also connected with a resistor R1 in parallel.
Further, a resistor R4 is arranged between the collector of the triode V1 and the input voltage.
Further, a resistor R6 is arranged between the collector of the triode V1 and the resistor R5.
Further, a capacitor C1 is connected between the collector and the emitter of the transistor V1.
Further, a capacitor C2 is connected between the output end of the temperature sensing compensation bias circuit and the ground.
A high efficiency MOS transistor power amplifier comprising: the automatic level loop control unit, the temperature compensation circuit and an attenuator, an MMC amplifier, an input matching unit, an MOS power amplifier tube and an output matching circuit which are sequentially connected from the radio frequency excitation input end to the power output end; the automatic level loop control unit performs sampling detection on the power output by the output matching circuit through the power sampling unit, adjusts the attenuation of the attenuator according to the power sampling detection, and controls the output power of the power amplifier; and the output end of the temperature compensation circuit is connected with the grid electrode of the MOS power amplification tube and is used for providing variable static working point voltage with temperature compensation for the MOS power amplification tube.
Compared with the prior art, the invention has the beneficial effects that:
aiming at the special high-efficiency application requirements, namely under the condition of strictly limiting the power consumption of the amplifier and greatly changing the temperature of the use environment, the temperature change characteristics of static voltages of the triode and the FET field effect transistor are utilized for compensation and amplification, and an integrated operational amplifier is adopted for isolated output, so that variable static working point voltage with temperature compensation is provided for the MOS field effect transistor, the compensation control of output power during temperature change is realized, and the adverse effect caused by deep ALC loop control is reduced.
Drawings
The invention is described in further detail below with reference to the figures and specific embodiments.
Fig. 1 is a schematic block diagram of a power control principle of a conventional MOS transistor power amplifier;
FIG. 2 is a schematic block diagram of the power control of the MOS transistor power amplifier of the present invention;
FIG. 3 is a circuit diagram of the static operating point temperature compensation circuit of the high efficiency MOS transistor power amplifier according to the embodiment of the present invention;
in the above figures, 100 f the temperature sensing compensation bias circuit; 110 a voltage regulating unit; 200 isolate the output circuit.
Detailed Description
The embodiments and effects of the present invention will be described in further detail below with reference to the accompanying drawings.
Referring to fig. 3, in a static operating point temperature compensation circuit of a high-efficiency MOS transistor power amplifier according to an embodiment of the present invention, one end of the temperature compensation circuit is connected to an input voltage, and the other end of the temperature compensation circuit is connected to a MOS power amplifier, where the temperature compensation circuit includes: the temperature sensing compensation bias circuit 100 and the isolation output circuit 200, wherein the temperature sensing compensation bias circuit 100 comprises a resistor R5, a resistor R8, a resistor R9, a triode V1 and a voltage regulating unit 110; the emitter of the triode V1 is grounded, the collector of the triode V1 is connected with one end of a resistor R5, and the other end of the resistor R5 is connected with the voltage regulating unit 110; one end of the voltage regulating unit 110 is connected to an input voltage, and the other end is grounded;
one end of the resistor R8 is connected with the base electrode of the triode V1, and the other end of the resistor R8 is connected with the collector electrode of the triode V1; one end of the resistor R9 is connected with the base electrode of the triode V1, and the other end of the resistor R9 is connected with the emitter of the triode V1; the isolated output circuit 200 includes a resistor R7, a resistor R10, an integrated operational amplifier N1A, and a magnetic bead E1; one end of the resistor R7 is connected to the output voltage of the temperature sensing compensation bias circuit 100, the other end of the resistor R7 is connected to the positive end of the integrated operational amplifier N1A, and the voltage at the output end of the integrated operational amplifier N1A is connected to the gate of the MOS power amplifier tube through the magnetic bead E1; the resistor R10 is connected between the inverting terminal and the output terminal of the integrated operational amplifier N1A.
The voltage regulating unit 110 comprises a resistor R1, a resistor R2, a resistor R3 and a potentiometer RP1, two fixed ends of the potentiometer RP1 are respectively connected with one ends of a resistor R2 and a resistor R3, the other end of the resistor R2 is connected with an input voltage, and the other end of the resistor R3 is grounded; the free end of the potentiometer RP1 is connected with a resistor R5; two fixed ends of the potentiometer RP1 are also connected with a resistor R1 in parallel.
In the above embodiments, the quiescent point temperature compensation circuit of the present invention is composed of two parts, including the temperature sensing compensation bias circuit 100 and the isolation output circuit 200, and the specific circuit diagram is shown in fig. 3.
The static working point temperature compensation circuit adopts +8V power supply; the resistors R4, R8, R9 and the triode V1 are temperature sensing compensation circuits, and the amplification of temperature proportion is realized by adopting different ratios of R8 and R9 by utilizing the characteristic that the PN junction conducting voltage of the triode V1 changes along with the temperature; the resistors R1, R2, R3 and the potentiometer RP1 realize the adjustment and coverage of the gate voltage of the MOS power amplification tube through voltage division, and the gate bias voltage and the temperature compensation are superposed by the resistor R5; the resistors R7 and R10, the integrated operational amplifier N1A and the magnetic bead E1 are an emitter follower isolated output circuit 200, and the temperature-dependent bias voltage provided by the temperature sensing compensation bias circuit 100 is isolated and output to the gate of the power amplifier tube. The capacitors C1 and C2 are filter capacitors.
The triode V1 in the invention is a temperature sensing device, and the installation position of the triode V1 is close to the power amplifier tube as much as possible;
u1 is a sampled and amplified voltage, the resistance of the potentiometer RP1 is much larger than R1, the sampled and amplified voltage U1 varies from 8 × R3/(R1+ R2+ R3) to 8 × (R1+ R3)/(R1+ R2+ R3), and the bias voltage adjustment range can be covered by adjusting the resistance of R1.
U2 is the fixed bias voltage that triode V1 temperature sensing device provided, U2 ═ 0.7+ VTemperature drift)*(1+R8/R9)，VTemperature driftThe amplified value of the sampling voltage changing with the temperature is the voltage change quantity changing with the temperature; by adjusting the ratio of R8 to R9, the voltage value at the U2 point can be changed, and different temperature change control rates can be realized.
U3 is the output composite bias voltage of the temperature sensing compensation bias circuit 100, whose value is: u3 ═ U1+ (U2-U1) × R5/(R5+ R6), and temperature compensation and bias fusion are achieved through the resistor R5.
Referring to fig. 2, another embodiment of the present invention provides a high efficiency MOS transistor power amplifier, including: the automatic level loop control unit, the temperature compensation circuit and an attenuator, an MMC amplifier, an input matching unit, an MOS power amplifier tube and an output matching circuit which are sequentially connected from the radio frequency excitation input end to the power output end; the automatic level loop control unit performs sampling detection on the power output by the output matching circuit through the power sampling unit, adjusts the attenuation of the attenuator according to the power sampling detection, and controls the output power of the power amplifier; and the output end of the temperature compensation circuit is connected with the grid electrode of the MOS power amplification tube and is used for providing variable static working point voltage with temperature compensation for the MOS power amplification tube.
Aiming at the high-efficiency power amplifier with large environmental temperature change, high-efficiency special application requirements and adverse effects caused by deep ALC loop power control of a power amplifier circuit, the invention designs a temperature compensation bias circuit by adopting a temperature compensation mode to reduce the influence of temperature on the output power of the power amplifier, compensates and amplifies by utilizing the temperature change characteristic of static voltage of a triode and an FET field effect transistor, and provides variable static working point voltage with temperature compensation for the MOS field effect transistor by adopting an integrated operational amplifier to carry out isolated output, thereby realizing the compensation control of the output power during the temperature change. The temperature compensation circuit is simple to realize and low in cost, can improve the economy of a special power amplifier which has large temperature change in use and requires high power amplifier conversion efficiency, and can provide sampling signals for power amplifier over-temperature protection and the like.
The invention is realized by simply building a circuit module by discrete devices, and can be used as a static working point functional circuit in the design process of the power amplifier. The problem that the power conversion efficiency of the conventional power amplifier circuit controlled by constant bias voltage and ALC is low at different temperatures is solved, and the high efficiency of the power amplifier for power conversion at different temperatures is realized by adopting the working point temperature compensation circuit to replace ALC loop control.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (7)
1. High-efficient MOS manages power amplifier's quiescent operating point temperature compensation circuit, input voltage is connected to its one end, and MOS power amplifier tube is connected to the other end, its characterized in that, temperature compensation circuit includes: the temperature sensing compensation bias circuit comprises a resistor R5, a resistor R8, a resistor R9, a triode V1 and a voltage regulating unit;
the emitter of the triode V1 is grounded, the collector of the triode V1 is connected with one end of a resistor R5, and the other end of the resistor R5 is connected with the voltage regulating unit;
one end of the voltage regulating unit is connected with an input voltage, and the other end of the voltage regulating unit is grounded;
one end of the resistor R8 is connected with the base electrode of the triode V1, and the other end of the resistor R8 is connected with the collector electrode of the triode V1;
one end of the resistor R9 is connected with the base electrode of the triode V1, and the other end of the resistor R9 is connected with the emitter of the triode V1;
the isolated output circuit comprises a resistor R7, a resistor R10, an integrated operational amplifier N1A and a magnetic bead E1;
one end of the resistor R7 is connected to the output voltage of the temperature sensing compensation bias circuit, the other end of the resistor R7 is connected to the positive end of the integrated operational amplifier N1A, and the voltage at the output end of the integrated operational amplifier N1A is connected to the gate of the MOS power amplifier tube through the magnetic bead E1;
the resistor R10 is connected between the inverting terminal and the output terminal of the integrated operational amplifier N1A.
2. The static operating point temperature compensation circuit of a high-efficiency MOS tube power amplifier as claimed in claim 1, wherein the voltage regulating unit comprises a resistor R1, a resistor R2, a resistor R3 and a potentiometer RP1, two fixed ends of the potentiometer RP1 are respectively connected with one ends of a resistor R2 and a resistor R3, the other end of the resistor R2 is connected with an input voltage, and the other end of the resistor R3 is grounded; the free end of the potentiometer RP1 is connected with a resistor R5; two fixed ends of the potentiometer RP1 are also connected with a resistor R1 in parallel.
3. The quiescent point temperature compensation circuit of a high efficiency MOS transistor power amplifier according to claim 1, wherein a resistor R4 is disposed between the collector of said transistor V1 and the input voltage.
4. The quiescent operating point temperature compensation circuit of a high efficiency MOS transistor power amplifier as claimed in claim 1, wherein a resistor R6 is disposed between the collector of said transistor V1 and the resistor R5.
5. The quiescent operating point temperature compensation circuit of a high efficiency MOS transistor power amplifier as defined in claim 1, wherein a capacitor C1 is connected between the collector and emitter of said transistor V1.
6. The quiescent operating point temperature compensation circuit of a high-efficiency MOS transistor power amplifier according to claim 5, wherein a capacitor C2 is connected between the output terminal of said temperature sensing compensation bias circuit and ground.
7. A high efficiency MOS transistor power amplifier, comprising: an automatic level loop control unit, a temperature compensation circuit according to any one of claims 1 to 6, and an attenuator, an MMC amplifier, an input matching unit, an MOS power amplifier tube and an output matching circuit which are connected in sequence from a radio frequency excitation input end to a power output end; the automatic level loop control unit performs sampling detection on the power output by the output matching circuit through the power sampling unit, adjusts the attenuation of the attenuator according to the power sampling detection, and controls the output power of the power amplifier; and the output end of the temperature compensation circuit is connected with the grid electrode of the MOS power amplification tube and is used for providing variable static working point voltage with temperature compensation for the MOS power amplification tube.
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| CN202011583186.XA CN112564638A (en) | 2020-12-28 | 2020-12-28 | Static working point temperature compensation circuit of high-efficiency MOS tube power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113779916A (en) * | 2021-09-16 | 2021-12-10 | 西北工业大学 | Charge sensitive preamplifier structure and design method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113779916A (en) * | 2021-09-16 | 2021-12-10 | 西北工业大学 | Charge sensitive preamplifier structure and design method |
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