CN112019172B - Grid driving circuit of gallium nitride device - Google Patents
Grid driving circuit of gallium nitride device Download PDFInfo
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- CN112019172B CN112019172B CN202010918635.5A CN202010918635A CN112019172B CN 112019172 B CN112019172 B CN 112019172B CN 202010918635 A CN202010918635 A CN 202010918635A CN 112019172 B CN112019172 B CN 112019172B
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 63
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 239000003990 capacitor Substances 0.000 claims description 13
- 230000003068 static effect Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/303—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters using a switching device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Nonlinear Science (AREA)
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
Abstract
The invention discloses a grid driving circuit of a gallium nitride device, which comprises a first compensation branch A, a second compensation branch B and a high-speed switch U1, wherein the first compensation branch A is connected with the first compensation branch B; the high-speed switch U1 is a two-out switch and comprises a normal open end NO, a normal closed end NC, a public end COM and an input control end IN; the first compensation branch A comprises an adjustable resistor RP and a first resistor R1; the second compensation branch B comprises a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6 and a triode U3; the normally-closed end NC of the high-speed switch U1 is connected to the first negative voltage, and the common end COM of the high-speed switch U1 is used as the output end Vg of the gallium nitride device gate driving circuit. According to the grid driving circuit of the gallium nitride device, the grid bias carrying capacity of the gallium nitride radio-frequency power amplifier is improved; in addition, the gallium nitride device grid driving circuit has fewer electrical elements, is miniaturized, is very convenient to install in a complex circuit, and improves the characteristic that the gallium nitride static current changes along with the temperature.
Description
Technical Field
The invention relates to a driving circuit, in particular to a grid driving circuit of a gallium nitride device.
Background
The depletion gallium nitride power transistor needs to work under the condition of negative voltage bias of the grid electrode, and because of the hetero-epitaxial structure of gallium nitride, the larger the swing voltage of the grid electrode is, the larger the electric leakage of the grid electrode is. Typically, the required gate drive current reaches even a 1mA/mm level after entering the saturation region.
In the traditional circuit, in order to facilitate circuit debugging, the scheme adopted by the grid voltage bias of the amplifier is that external power supply voltage is divided by a potentiometer, so that the grid voltage under the corresponding static current is obtained. When gallium nitride enters a nonlinear region to work, the gate current is suddenly increased, so that the traditional potentiometer is changed, the static current is changed, and the linearity of the amplifier is changed. When the temperature changes, the turn-on voltage of the GaN power transistor shifts, so when the external temperature changes, the quiescent current of the GaN also changes, and at the moment, the quiescent gate voltage is adjusted.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a gallium nitride device gate driving circuit which improves the gate bias carrying capacity of a gallium nitride radio frequency power amplifier and improves the characteristic of gallium nitride quiescent current changing along with temperature.
In order to achieve the above object, the technical scheme of the present invention is as follows:
a gate driving circuit of a gallium nitride device comprises a first compensation branch circuit (A), a second compensation branch circuit (B) and a high-speed switch (U1); the high-speed switch (U1) is a one-out-of-two switch and comprises a normal open end (NO), a normally closed end (NC), a public end (COM) and an input control end (IN); the first compensation branch circuit (A) comprises an adjustable Resistor (RP) and a first resistor (R1);
one end of the adjustable Resistor (RP) is connected to a first negative voltage, the other end of the adjustable Resistor (RP) is grounded, the adjustable end of the adjustable Resistor (RP) is connected to one end of the first resistor (R1), and the other end of the first resistor (R1) is connected to a normally open end (NO) of the high-speed switch (U1); the second compensation branch circuit (B) comprises a third resistor (R3), a fourth resistor (R4), a fifth resistor (R5), a sixth resistor (R6) and a triode (U3); one end of the sixth resistor (R6) is connected to a normally open end (NO) of the high-speed switch (U1), the other end of the sixth resistor (R6) is respectively connected to one end of the fourth resistor (R4), one end of the fifth resistor (R5) and a collector electrode of the triode, and the other end of the fourth resistor (R4) is respectively connected to one end of the third resistor (R3) and a base electrode of the triode; the other end of the fifth resistor (R5) is connected to a first negative voltage; the other ends of the emitting electrode of the triode and the third resistor (R3) are respectively grounded; the normally closed end (NC) of the high-speed switch (U1) is connected to a first negative voltage, and the common end (COM) of the high-speed switch (U1) is used as an output end (Vg) of a grid driving circuit of the gallium nitride device; an input control end (IN) of the high-speed switch (U1) is used as an input end of a grid driving circuit of the gallium nitride device.
Further, in an embodiment of the present invention, the gate driving circuit of the gallium nitride device further includes a voltage follower (U2), and the common terminal (COM) of the high-speed switch (U1) is connected to the positive input terminal of the voltage follower (U2); the negative input end of the voltage follower (U2) is connected to the output end of the voltage follower (U2), and the output end of the voltage follower (U2) serves as the output end (Vg) of the gallium nitride device grid driving circuit.
Further, in an embodiment of the present invention, the gallium nitride device gate driving circuit further includes a first capacitor (C1) and a second resistor (R2), where the first capacitor (C1) is connected in parallel to the negative input terminal of the voltage follower (U2) and the output terminal of the voltage follower (U2); the second resistor (R2) is connected in parallel to the negative input of the voltage follower (U2) and the output of the voltage follower (U2).
In the gallium nitride device gate driving circuit, the capacitance value of the first capacitor (C1) is less than or equal to 1 mu F, and the resistance value of the second resistor (R2) ranges from 1 to 200Ω; the time response constant of the RC circuit formed by the first capacitor (C1) and the second resistor (R2) is less than or equal to 50ns.
Further, preferably, the triode is a PNP triode, and the model of the triode is BC857B.
Further, preferably, the high-speed switch (U1) is of a type TS12A1, and the input control terminal IN of the high-speed switch (U1) is configured to receive a high-low level control signal.
Further, it is preferable that the voltage value of the first negative voltage is-5V.
Further, preferably, the voltage follower (U2) is an operational amplifier.
Further, preferably, the resistance value of the first resistor (R1) is smaller than the resistance value of the sixth resistor (R6).
Further, preferably, the input control terminal (IN) of the high-speed switch (U1) is connected to a resistor to ground, and the high-speed switch (U1) further includes a positive voltage input terminal (v+) and a negative voltage input terminal (V-); the positive voltage input (V+) of the high-speed switch (U1) is connected to +5V voltage and the negative voltage input (V-) of the high-speed switch (U1) is connected to-5V voltage.
Compared with the prior art, the gallium nitride device grid driving circuit has the following beneficial effects:
the grid driving circuit improves the grid bias carrying capacity of the gallium nitride radio frequency power amplifier, and in addition, the grid driving circuit of the gallium nitride device is miniaturized and is very convenient to install in a complex circuit; meanwhile, the characteristic that the gallium nitride static current changes along with the temperature is improved.
Drawings
FIG. 1 is a schematic diagram of a gate driver circuit of a GaN device according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a gate driver circuit of a GaN device according to another embodiment of the invention;
fig. 3 is a schematic diagram of a high-speed switch U1 according to the present invention.
Detailed Description
The invention is further explained below with reference to the drawings and specific embodiments.
Referring to fig. 1, a gate driving circuit of a gallium nitride device according to an embodiment of the present invention includes a first compensation branch a, a second compensation branch B, and a high-speed switch U1; the high-speed switch U1 is a two-out switch and comprises a normal open end NO, a normal closed end NC, a public end COM and an input control end IN; the first compensation branch A comprises an adjustable resistor RP and a first resistor R1; one end of the adjustable resistor RP is connected to a first negative voltage, the other end of the adjustable resistor RP is grounded, the adjustable end of the adjustable resistor RP is connected to one end of a first resistor R, and the other end of the first resistor R is connected to a normally open end NO of a high-speed switch U1; the second compensation branch B comprises a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6 and a triode U3; one end of the sixth resistor R6 is connected to a normally open end NO of the high-speed switch U1, the other end of the sixth resistor R6 is respectively connected to one end of a fourth resistor R4, one end of a fifth resistor R5 and a collector electrode of the triode, and the other end of the fourth resistor R4 is respectively connected to one end of a third resistor R3 and a base electrode of the triode; the other end of the fifth resistor R5 is connected to a first negative voltage; the emitter of the triode and the other end of the third resistor R3 are respectively grounded; the normally closed end NC of the high-speed switch U1 is connected to a first negative voltage, and the common end COM of the high-speed switch U1 is used as an output end Vg of a grid driving circuit of the gallium nitride device; the input control end IN of the high-speed switch U1 is used as the input end of a grid driving circuit of the gallium nitride device.
Further, the gallium nitride device gate driving circuit further comprises a voltage follower U2, the voltage of the output end of the voltage follower U2 is equal to the voltage of the positive input end of the voltage follower U2, and meanwhile, the voltage of the output end of the voltage follower U2 provides larger current carrying capacity due to the fact that the output end of the voltage follower U2 is isolated from the positive input end of the voltage follower U2; when the input control terminal IN of the high-speed switch U1 is input to a high level, the high-speed switch U1 connects the voltages of the sixth resistor R6 and the first resistor R1 to the unidirectional input port of the voltage follower amplifier, and the operation provides a strong load capacity output, and meanwhile, the U3 triode improves the gate static voltage drift caused by temperature change.
The common end COM of the high-speed switch U1 is connected to the positive input end of the voltage follower U2; the negative input end of the voltage follower U2 is connected to the output end of the voltage follower U2, and the output end of the voltage follower U2 serves as an output end Vg of the gallium nitride device gate driving circuit.
The output end Vg of the gallium nitride device grid driving circuit is connected to the grid of the gallium nitride device, the gallium nitride device is a gallium nitride radio frequency device, and the gallium nitride device is a HEMT device. The main scenes of the gallium nitride radio frequency device of the invention include application scenes, wireless communication, gallium nitride power amplifier, ISM application and the like.
Further, as shown in fig. 2, the gate driving circuit of the gallium nitride device further includes a first capacitor C1 and a second resistor R2, where the first capacitor C1 is connected in parallel to the negative input end of the voltage follower U2 and the output end of the voltage follower U2; the second resistor R2 is connected in parallel to the negative input terminal of the voltage follower U2 and the output terminal of the voltage follower U2. Wherein the first capacitor C1 and the second resistor R2 act as steady state filtering. The capacitance value of the first capacitor C1 is smaller than or equal to 1 mu F, and the resistance value range of the second resistor R2 is 1-200Ω; the time response constant of the RC circuit formed by the first capacitor (C1) and the second resistor (R2) is less than or equal to 50ns.
In the embodiment of the present invention, the triode U3 is a PNP triode, and the model of the triode U3 is BC857B, and it should be noted that the triode U3 of the present invention is not limited to the model listed in the embodiment.
The input control terminal IN of the high-speed switch U1 of the present invention is used for receiving a high/low level control signal. The model of the high-speed switch U1 shown IN fig. 3 is TS12A1, and includes 8 pins, i.e., COM end 1 pin, NC 2 pin, GND 3 pin, v+ 5 pin, n.c., IN 6 pin, V-7 pin, and NO 8 pin. IN the invention, when the input control end IN of the high-speed switch U1 is input to be at a low level, a public end COM and a normally-closed end NC are IN a conducting state, and the public end COM and the normally-open end NO are IN a disconnecting state; when the input control terminal IN of the high-speed switch U1 is input to a high level, the common terminal COM and the normally open terminal NO are controlled to be IN a conductive state, and the common terminal COM and the normally open terminal NC are controlled to be IN a disconnected state. It should be noted that, according to the teachings of the present invention, high-speed switches of different types may be selected, and the high-low level control signal may be received for controlling the switch of either type.
In the above embodiment, it is preferable that the voltage value of the first negative voltage is-5V.
In the above embodiment, preferably, the voltage follower U2 is an operational amplifier, and the model of the operational amplifier is LMH6657MF.
In the above embodiment, it is preferable that the resistance value of the first resistor R1 is smaller than the resistance value of the sixth resistor R6.
Further, the input control end IN of the high-speed switch U1 is connected to a resistor to ground, and the high-speed switch U1 further includes a positive voltage input end v+ and a negative voltage input end V-; the positive voltage input terminal V+ of the high-speed switch U1 is connected to +5V voltage, and the negative voltage input terminal V-of the high-speed switch U1 is connected to-5V voltage.
The working principle of the grid driving circuit of the gallium nitride device of the invention is as follows:
the input control end IN of the high-speed switch U1 is an external high-low level control signal, and when the input of the input control end IN of the high-speed switch U1 is low level, the input control end IN is connected with the public end COM and the normally closed end NC for conduction, and the public end COM outputs-5V voltage; when the input control end IN of the high-speed switch U1 is input to be at a high level, the common end COM is connected with the normal-start end NO, and the gate voltage compensation is performed by utilizing the characteristic that the conducting voltage of the diode of the Vbe changes along with the temperature; the adjustable resistor RP is a potentiometer, and the adjusting voltage can be from-5V to 0V; the switch U1 connects the voltages across the sixth resistor R6 and the first resistor R1 to the unidirectional input port of the voltage follower amplifier.
According to the grid driving circuit of the gallium nitride device, on one hand, the grid bias carrying capacity of the gallium nitride radio-frequency power amplifier is improved; in addition, the gallium nitride device grid driving circuit has fewer electric elements, is miniaturized, is very convenient to install in a complex circuit, and improves the characteristic that the gallium nitride static current changes along with the temperature.
The above embodiments are only for further illustrating a gan device gate driving circuit according to the present invention, but the present invention is not limited to the embodiments, and any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present invention falls within the scope of the technical solution of the present invention.
Claims (9)
1. A gate driving circuit of gallium nitride device is characterized in that,
comprises a first compensation branch circuit (A), a second compensation branch circuit (B) and a high-speed switch (U1);
the high-speed switch (U1) is a one-out-of-two switch and comprises a normal open end (NO), a normally closed end (NC), a public end (COM) and an input control end (IN);
the first compensation branch circuit (A) comprises an adjustable Resistor (RP) and a first resistor (R1);
one end of the adjustable Resistor (RP) is connected to a first negative voltage, the other end of the adjustable Resistor (RP) is grounded, the adjustable end of the adjustable Resistor (RP) is connected to one end of the first resistor (R1), and the other end of the first resistor (R1) is connected to a normally open end (NO) of the high-speed switch (U1);
the second compensation branch circuit (B) comprises a third resistor (R3), a fourth resistor (R4), a fifth resistor (R5), a sixth resistor (R6) and a triode (U3);
compensating the grid voltage of the gallium nitride device by the characteristic that the on voltage Vbe of the B pole and the E pole of the triode (U3) changes along with the temperature;
one end of the sixth resistor (R6) is connected to a normally open end (NO) of the high-speed switch (U1), the other end of the sixth resistor (R6) is respectively connected to one end of the fourth resistor (R4), one end of the fifth resistor (R5) and a collector electrode of the triode, and the other end of the fourth resistor (R4) is respectively connected to one end of the third resistor (R3) and a base electrode of the triode; the other end of the fifth resistor (R5) is connected to a first negative voltage; the other ends of the emitting electrode of the triode and the third resistor (R3) are respectively grounded;
the normally closed end (NC) of the high-speed switch (U1) is connected to a first negative voltage, and the common end (COM) of the high-speed switch (U1) is used as an output end (Vg) of a grid driving circuit of the gallium nitride device;
an input control end (IN) of the high-speed switch (U1) is used as an input end of a grid driving circuit of the gallium nitride device;
the resistance value of the first resistor (R1) is smaller than the resistance value of the sixth resistor (R6);
the gallium nitride device gate drive circuit further includes a voltage follower (U2),
the common end (COM) of the high-speed switch (U1) is connected to the positive input end of the voltage follower (U2);
the negative input end of the voltage follower (U2) is connected to the output end of the voltage follower (U2), and the output end of the voltage follower (U2) serves as the output end (Vg) of the gallium nitride device grid driving circuit.
2. A gallium nitride device gate driver circuit according to claim 1, wherein,
the gallium nitride device gate drive circuit further comprises a first capacitor (C1) and a second resistor (R2),
the first capacitor (C1) is connected in parallel to the negative input end of the voltage follower (U2) and the output end of the voltage follower (U2);
the second resistor (R2) is connected in parallel to the negative input of the voltage follower (U2) and the output of the voltage follower (U2).
3. A gallium nitride device gate driver circuit according to claim 2, wherein,
the capacitance value of the first capacitor (C1) is smaller than or equal to 1 mu F, and the resistance value range of the second resistor (R2) is 1-200Ω; the time response constant of the RC circuit formed by the first capacitor (C1) and the second resistor (R2) is less than or equal to 50ns.
4. A gallium nitride device gate driver circuit according to claim 1, wherein,
the triode is a PNP triode, and the model of the triode is BC857B.
5. A gallium nitride device gate driver circuit according to claim 1, wherein,
the model of the high-speed switch (U1) is TS12A1, and an input control end IN of the high-speed switch (U1) is used for receiving a high-low level control signal.
6. A gallium nitride device gate driver circuit according to claim 1, wherein,
the voltage value of the first negative voltage is-5V.
7. A gallium nitride device gate driver circuit according to claim 1, wherein,
the voltage follower (U2) is an operational amplifier.
8. A gallium nitride device gate driver circuit according to claim 1, wherein,
when the input control end IN of the high-speed switch (U1) is input to be at a low level, the common end (COM) and the normally-closed end (NC) are IN a conducting state, and the common end (COM) and the normally-open end (NO) are IN an disconnecting state; when the input control terminal (IN) of the high-speed switch (U1) is at a high level, the common terminal (COM) and the normally open terminal (NO) are controlled to be IN a conducting state, and the common terminal (COM) and the normally open terminal (NC) are controlled to be IN a disconnecting state.
9. A gallium nitride device gate driver circuit according to claim 1, wherein,
the input control end (IN) of the high-speed switch (U1) is connected with a resistor to the ground, and the high-speed switch (U1) further comprises a positive voltage input end (V+) and a negative voltage input end (V-); the positive voltage input (V+) of the high-speed switch (U1) is connected to +5V voltage and the negative voltage input (V-) of the high-speed switch (U1) is connected to-5V voltage.
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| CN202010918635.5A CN112019172B (en) | 2020-09-03 | 2020-09-03 | Grid driving circuit of gallium nitride device |
| CN202310718626.5A CN117478121A (en) | 2020-09-03 | 2020-09-03 | Grid driving circuit of gallium nitride device |
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| CN202010918635.5A CN112019172B (en) | 2020-09-03 | 2020-09-03 | Grid driving circuit of gallium nitride device |
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| CN112532184A (en) * | 2020-12-03 | 2021-03-19 | 深圳国人无线通信有限公司 | Power amplifier grid voltage switching device |
| CN114978132B (en) * | 2022-08-01 | 2022-11-04 | 深圳芯能半导体技术有限公司 | Gate drive starting circuit with temperature compensation function |
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- 2020-09-03 CN CN202010918635.5A patent/CN112019172B/en active Active
- 2020-09-03 CN CN202310718626.5A patent/CN117478121A/en active Pending
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| JPH05175747A (en) * | 1991-12-25 | 1993-07-13 | Mitsubishi Electric Corp | High output fet amplifier |
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| CN117478121A (en) | 2024-01-30 |
| CN112019172A (en) | 2020-12-01 |
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Inventor after: Lu Yifeng Inventor after: Lin Zhidong Inventor after: Liu Shenghou Inventor after: Cai Xianqing Inventor after: Hou Yiwei Inventor before: Lu Yifeng Inventor before: Lin Zhidong Inventor before: Liu Shenghou Inventor before: Cai Xianqing Inventor before: Hou Yiwei |