CN112511109B - Power amplifying circuit and wireless transmitting device - Google Patents
Power amplifying circuit and wireless transmitting device Download PDFInfo
- Publication number
- CN112511109B CN112511109B CN202011022464.4A CN202011022464A CN112511109B CN 112511109 B CN112511109 B CN 112511109B CN 202011022464 A CN202011022464 A CN 202011022464A CN 112511109 B CN112511109 B CN 112511109B
- Authority
- CN
- China
- Prior art keywords
- power
- power amplifier
- capacitor
- amplifier
- over switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004146 energy storage Methods 0.000 claims abstract description 34
- 238000005070 sampling Methods 0.000 claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims description 47
- 230000003321 amplification Effects 0.000 claims description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 9
- 230000003068 static effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- NRNCYVBFPDDJNE-UHFFFAOYSA-N pemoline Chemical group O1C(N)=NC(=O)C1C1=CC=CC=C1 NRNCYVBFPDDJNE-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/30—Structural combination of electric measuring instruments with basic electronic circuits, e.g. with amplifier
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2822—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere of microwave or radiofrequency circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- General Engineering & Computer Science (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a power amplifying circuit and wireless transmitting equipment. The power amplifying circuit comprises a power amplifier, an energy storage unit, a switching tube, a current sampling resistor, a differential amplifier, a voltage comparator and a change-over switch; the grid electrode of the power amplifier is used for receiving radio frequency input signals and is electrically connected with one end of the energy storage unit; one end of the current sampling resistor is respectively and electrically connected with the second end of the power amplifier and the first input end of the differential amplifier, and the other end of the current sampling resistor is respectively and electrically connected with the second input end of the differential amplifier and the power supply; the first input end of the voltage comparator is electrically connected with the output end of the differential amplifier, the second input end of the voltage comparator is connected with the first end of the change-over switch, and the output end of the voltage comparator is connected with the control end of the switching tube. The invention can realize automatic adjustment of the grid voltage of the power amplifier through the cooperation of the differential amplifier, the voltage comparator, the energy storage unit, the switching tube and the change-over switch, thereby configuring the power amplifier at an optimal working point.
Description
Technical Field
The present invention relates to the field of electronic communications, and in particular, to a power amplifying circuit and a wireless transmitting device.
Background
The optimal operating point of the power amplifier is the drain current value when the gate voltage of the power amplifier is controlled to make the output power, linearity and working efficiency of the power amplifier reach the optimal balance, and the drain current value is the optimal operating point of the corresponding model power amplifier. And reading the drain current value of the power amplifier, and judging whether the drain current value is in a preset optimal operating point threshold range, if so, indicating that the power amplifier is at an optimal operating point.
In the past, when searching for the optimum operating point of the power amplifier, it is necessary to control the magnitude of the drain current by adjusting the gate voltage, and to make the drain current reach a predetermined threshold range. Since each power amplifier has a certain difference, the gate voltages corresponding to the optimal operating points are different. However, for the same type of power amplifier, the threshold range of drain current corresponding to the optimal operating point is the same. In addition, when the external ambient temperature changes, the internal resistance of the power amplifier also changes, resulting in a change in the drain current of the power amplifier, thereby shifting the optimum operating point, so that it is necessary to increase or decrease the gate voltage so that the power amplifier returns to the optimum operating point again.
In the prior art, in order to find the optimal working point of each power amplifier, the drain current needs to be read by using an analog-digital converter ADC, the gate voltage of the power amplifier needs to be set by using a digital-analog converter DAC, meanwhile, logic operation and control circuits such as an FPGA are also needed, and software is needed to write a program according to a specific algorithm to realize control. The method for searching the optimal working point of the power amplifier occupies excessive manpower and material resources, and has high cost.
Disclosure of Invention
The invention aims to overcome the defect of high cost in the method for searching the optimal working point of the power amplifier in the prior art, and provides a power amplifying circuit and a base station for automatically configuring the optimal working point of the power amplifier.
The invention solves the technical problems by the following technical scheme:
the first aspect of the invention provides a power amplifying circuit, which comprises a power amplifier, an energy storage unit, a switching tube, a current sampling resistor, a differential amplifier, a voltage comparator and a change-over switch;
the grid electrode of the power amplifier is used for receiving radio frequency input signals and is electrically connected with one end of the energy storage unit; the first end of the power amplifier is grounded;
one end of the current sampling resistor is respectively and electrically connected with the second end of the power amplifier and the first input end of the differential amplifier, and the other end of the current sampling resistor is respectively and electrically connected with the second input end of the differential amplifier and the power supply;
the first input end of the voltage comparator is electrically connected with the output end of the differential amplifier, the second input end of the voltage comparator is connected with the first end of the change-over switch, and the output end of the voltage comparator is connected with the control end of the switching tube and used for controlling the switching tube to be turned on or off; one end of the switching tube is electrically connected with the other end of the energy storage unit, and the other end of the switching tube is connected with a third reference power supply;
the second end of the change-over switch is connected with a first reference power supply, the third end of the change-over switch is connected with a second reference power supply, wherein the voltage of the first reference power supply is the output voltage of the differential amplifier when the power amplifier is at an optimal static working point, and the voltage of the second reference power supply is the output voltage of the differential amplifier when the power amplifier is at the optimal working point and is at the maximum rated output power;
when the output power of the power amplifier reaches rated power, the change-over switch is used for communicating the first end and the third end, otherwise, the change-over switch is used for communicating the first end and the second end.
Preferably, the power amplifier comprises an NMOS tube, wherein the first end of the power amplifier is the source electrode of the NMOS tube, and the second end of the power amplifier is the drain electrode of the NMOS tube.
Preferably, the energy storage unit comprises a first inductor, a first capacitor and a diode, wherein the grid electrode of the power amplifier is connected with one end of the first inductor and one end of the first capacitor respectively, the other end of the first inductor is connected with the cathode of the diode and one end of the switching tube respectively, and the other end of the first capacitor and the anode of the diode are grounded.
Preferably, the switch tube is a MOS tube or a triode.
Preferably, the power amplifying circuit further comprises a second inductor and a second capacitor;
the second inductor is connected in series between the grid electrode of the power amplifier and the energy storage unit, one end of the second capacitor is used for receiving radio frequency input signals, and the other end of the second capacitor is electrically connected with the grid electrode of the power amplifier.
Preferably, the power amplifying circuit further comprises a third inductor and a third capacitor;
the third inductor is connected in series between the second end of the power amplifier and the current sampling resistor, one end of the third capacitor is electrically connected with the second end of the power amplifier, and the other end of the third capacitor is used for outputting a radio frequency output signal.
Preferably, the power amplifying circuit further includes a fourth capacitor, one end of which is connected to one end of the energy storage unit, and the other end of which is grounded.
Preferably, the power amplifying circuit further includes a fifth capacitor, one end of which is connected to the third reference power supply, and the other end of which is grounded.
Preferably, the voltage of the third reference power supply is greater than or equal to the maximum gate voltage corresponding to the optimal working point of the power amplifier.
A second aspect of the present invention provides a wireless transmitting device comprising the power amplifying circuit of the first aspect, the wireless transmitting device being configured to:
and if the power amplifier is in a TDD (time division duplex) working mode and reaches the maximum rated power of transmission, controlling the change-over switch to be communicated with the first end and the third end, otherwise, controlling the change-over switch to be communicated with the first end and the second end.
A third aspect of the present invention provides a wireless transmitting device comprising the power amplifying circuit of the first aspect, the wireless transmitting device being configured to:
and if the power amplifier is in an FDD (frequency division duplex) working mode and reaches the maximum rated power, controlling the change-over switch to be communicated with the first end and the third end, otherwise, controlling the change-over switch to be communicated with the first end and the second end.
The invention has the positive progress effects that: and comparing the voltage output by the differential amplifier with the voltage of the first reference power supply or the second reference power supply, and controlling the switching tube to be switched on or off according to the comparison result. Specifically, if the switching tube is turned on, the third reference power supply stores energy into the energy storage unit, and as the energy storage unit continuously stores energy, the gate voltage of the power amplifier rapidly rises. If the switch tube is turned off, the energy storage unit slowly discharges energy, and the grid voltage of the power amplifier gradually drops along with the continuous energy discharge of the energy storage unit. The invention can realize automatic adjustment of the grid voltage of the power amplifier through the cooperation of the differential amplifier, the voltage comparator, the energy storage unit, the switching tube and the change-over switch, thereby configuring the power amplifier at an optimal working point.
Drawings
Fig. 1 is a schematic circuit diagram of a power amplifying circuit according to embodiment 1 of the present invention.
Fig. 2 is a circuit diagram of a differential amplifier according to embodiment 1 of the present invention.
Fig. 3 is a schematic circuit diagram of a specific power amplifying circuit according to embodiment 1 of the present invention.
Fig. 4 is a schematic circuit diagram of another specific power amplifying circuit according to embodiment 1 of the present invention.
Fig. 5 is a schematic circuit diagram of a power amplifying circuit according to another embodiment 1 of the present invention.
Detailed Description
The invention is further illustrated by means of the following examples, which are not intended to limit the scope of the invention.
Example 1
The embodiment provides a power amplifying circuit, the internal circuit structure of which is shown in fig. 1, and the power amplifying circuit comprises a power amplifier, an energy storage unit, a switching tube, a current sampling resistor Ra, a differential amplifier, a voltage comparator and a change-over switch.
The grid electrode of the power amplifier is used for receiving a radio frequency input signal RFin and is electrically connected with one end of the energy storage unit; the first terminal of the power amplifier is grounded.
One end of the current sampling resistor Ra is electrically connected with the second end of the power amplifier and the first input end of the differential amplifier respectively, and the other end of the current sampling resistor Ra is electrically connected with the second input end of the differential amplifier and the power supply VCC respectively. Wherein the second end of the power amplifier is further configured to output a radio frequency output signal RFout. It should be noted that, the power amplifier in this embodiment is configured to amplify the power of the radio frequency input signal RFin, so as to obtain the radio frequency output signal RFout.
When the drain current of the power amplifier passes through the current sampling resistor Ra, a voltage difference is generated between two ends of the current sampling resistor Ra, and the differential amplifier is used for amplifying the voltage difference. Fig. 2 is a circuit diagram for illustrating a differential amplifier. In the example shown in fig. 2, the differential amplifier has a first input terminal voltage U1, a second input terminal voltage U2, r1=r2, r3=r4, and an output voltage uo= (U2-U1) R4/R1. The voltage drop on the current sampling resistor Ra is U2-U1, and the amplification factor is R4/R1. In specific implementation, R4 and R1 with different resistance values can be selected to achieve the required magnification.
The first input end of the voltage comparator is electrically connected with the output end of the differential amplifier, the second input end of the voltage comparator is connected with the first end of the change-over switch, and the output end of the voltage comparator is connected with the control end of the switching tube and used for controlling the switching tube to be turned on or off. One end of the switching tube is electrically connected with the other end of the energy storage unit, and the other end of the switching tube is connected with a third reference power supply VDD.
In an optional implementation manner, the switch tube is a MOS tube or a triode. In one example of implementation, the switching tube is in an off state by default.
In an alternative embodiment, the voltage of the third reference power supply VDD is greater than or equal to the maximum gate voltage corresponding to the optimal operating point of the power amplifier.
In an alternative embodiment, the third reference power supply VDD is powered up after the power supply VCC.
The second end of the change-over switch is connected with the first reference power supply V1, and the third end of the change-over switch is connected with the second reference power supply V2. The voltage of the first reference power supply V1 is the output voltage of the differential amplifier when the power amplifier is at the optimal static working point, and the voltage of the second reference power supply V2 is the output voltage of the differential amplifier when the power amplifier is at the optimal working point and at the maximum rated output power.
In specific implementation, the change-over switch can be a single-pole double-throw switch, a switch chip or the like.
When the output power of the power amplifier reaches the maximum rated power, the change-over switch is used for communicating the first end and the third end, otherwise, the change-over switch is used for communicating the first end and the second end.
In one example of implementation, the switch is connected to the first terminal and the second terminal by default, that is, the second input terminal of the voltage comparator is connected to the first reference power V1. And controlling whether the power amplifier needs to output at the maximum rated power by the wireless transmitting equipment, and if the output power of the power amplifier needs to reach the maximum rated power, sending a first control signal to the change-over switch so as to enable the first end of the change-over switch to be switched to be connected with the third end.
In this embodiment, the switching transistor is controlled to be turned on or off according to the result of comparing the voltage output from the differential amplifier with the voltage of the first reference power supply or the second reference power supply. Specifically, if the switching tube is turned on, the third reference power supply VDD stores energy into the energy storage unit, and as the energy storage unit continuously stores energy, the gate voltage of the power amplifier rapidly rises. If the switch tube is turned off, the energy storage unit slowly discharges energy, and the grid voltage of the power amplifier gradually drops along with the continuous energy discharge of the energy storage unit. According to the embodiment, the grid voltage of the power amplifier can be automatically adjusted through the cooperation of the differential amplifier, the voltage comparator, the energy storage unit, the switching tube and the change-over switch, so that the power amplifier is configured at an optimal working point.
In an optional implementation manner, the energy storage unit includes a first inductor L1, a first capacitor C1 and a diode D1, where a gate of the power amplifier is connected to one end of the first inductor L1 and one end of the first capacitor C1, the other end of the first inductor L1 is connected to a cathode of the diode D1 and one end of the switching tube, and the other end of the first capacitor C1 and an anode of the diode D1 are grounded.
In an alternative embodiment, the power amplifying circuit further includes a second inductor L2 and a second capacitor C2. The second inductor L2 is connected in series between the grid electrode of the power amplifier and the energy storage unit, one end of the second capacitor C2 is used for receiving radio frequency input signals, and the other end of the second capacitor C2 is electrically connected with the grid electrode of the power amplifier. In this embodiment, the second inductor L2 is used for blocking the radio frequency input signal from entering the circuits such as the energy storage unit, and the second capacitor C2 is used for blocking the direct current signal from entering the power amplifier.
In an alternative embodiment, the power amplifying circuit further includes a third inductor L3 and a third capacitor C3. The third inductor L3 is connected in series between the second end of the power amplifier and the sampling resistor Ra, one end of the third capacitor C3 is electrically connected with the second end of the power amplifier, and the other end of the third capacitor C3 is used for outputting a radio frequency output signal RFout. In this embodiment, the third inductor L3 is used to block the rf output signal from entering the differential amplifier and other circuits, and the third capacitor C3 is used to block the dc signal from being output from the output end of the rf output signal.
In an optional embodiment, the power amplifying circuit further includes a fourth capacitor C4, one end of the fourth capacitor C4 is connected to one end of the energy storage unit, and the other end of the fourth capacitor C4 is grounded. In this embodiment, the fourth capacitor C4 is used to implement a filtering function to reduce voltage fluctuations on the gate voltage of the power amplifier.
In an alternative embodiment, the power amplifying circuit further includes a fifth capacitor C5, one end of which is connected to the third reference power supply VDD, and the other end of which is grounded. In this embodiment, the fifth capacitor C5 is used to implement a filtering function to reduce the voltage fluctuation of the third reference power supply VDD.
Fig. 3 is a schematic diagram for illustrating a circuit configuration of a specific power amplifying circuit. In the example shown in fig. 3, the switching transistor is an NMOS transistor Q1, and the change-over switch is a single pole double throw switch K1.
In an alternative embodiment, the power amplifier includes an NMOS transistor Q3, the first end of the power amplifier is a source of the NMOS transistor Q2, and the second end of the power amplifier is a drain of the NMOS transistor Q2.
In alternative other embodiments, the power amplifier may be other power MOS transistors besides NMOS transistors, such as LDMOS (laterally diffused metal oxide semiconductor), gaAs HBT (gallium arsenide heterojunction bipolar transistor), GAN HBT (gallium nitride heterojunction bipolar transistor), or the like.
Fig. 4 is a circuit diagram for illustrating another specific power amplifying circuit.
The working principle of the power amplifier of the present embodiment will be described in detail with reference to fig. 4.
Assuming that the drain current corresponding to the optimal static operating point of the NMOS Q2 is α when no radio frequency signal is input, and the drain current corresponding to the optimal operating point is β when the output power reaches the maximum rated power. The gate voltage range corresponding to the optimal operating point of the NMOS transistor Q2 is delta min ～δ max . The amplification factor of the differential amplifier is 20 times. Then, the voltage value of the first reference power V1 is ra×α×20; the voltage value of the second reference power V2 is ra×β×20. The switch K1 communicates the first end with the second end, i.e., ve=v1. The voltage value of the third reference power supply VDD is delta max 。
In a specific example, the power supply VCC is powered on first and the third reference power VDD is powered on later. In another specific example, the power supply VCC and the third reference power supply VDD are powered up simultaneously, and the switching transistor Q1 is in an off state.
In both examples, after the power supply VCC is powered on, the NMOS transistor Q2 has no gate voltage, so that the NMOS transistor Q2 is not turned on, i.e., has no drain current, so that the voltage Vb output from the differential amplifier is extremely low, the voltage comparator is used to compare Vb with V1, and when Vb < V1, the voltage comparator outputs a high level, and the switching transistor Q1 is turned on. After the switch tube Q1 is conducted, the first inductor L1 and the first capacitor C1 are charged. Along with the continuous charging of the first inductor L1 and the first capacitor C1, the gate voltage of the NMOS transistor Q2 is continuously increased, and the drain current is also continuously increased, so that the voltage Vb output by the differential amplifier is also increased.
When Vb is greater than V1, the voltage comparator outputs a low level, the switching tube Q1 is turned off, the first inductor L1, the first capacitor C1 and the diode D1 form a discharge loop, the grid voltage of the NMOS tube Q2 is continuously reduced until Vb is less than V1, and the steps are repeated.
When the output power of the NMOS transistor Q2 reaches the maximum rated power, the switch K1 is used to connect the first terminal and the third terminal, i.e. ve=v2. The voltage comparator is used for comparing Vb and V2. When Vb is smaller than V2, the voltage comparator outputs high level, and the switch tube Q1 is conducted. After the switch tube Q1 is conducted, the first inductor L1 and the first capacitor C1 are charged. Along with the continuous charging of the first inductor L1 and the first capacitor C1, the gate voltage of the NMOS transistor Q2 is continuously increased, and the drain current is also continuously increased, so that the voltage Vb output by the differential amplifier is also increased.
When Vb is greater than V2, the voltage comparator outputs a low level, the switching tube Q1 is turned off, the first inductor L1, the first capacitor C1 and the diode D1 form a discharge loop, the grid voltage of the NMOS tube Q2 is continuously reduced until Vb is less than V2, and the steps are repeated.
The power amplifying circuit provided in this embodiment can keep the drain current of the power amplifier unchanged by automatically adjusting the gate voltage of the NMOS transistor Q2, which is the power amplifier, so as to operate at an optimal operating point. In addition, no matter how the external environment temperature changes, the power amplifying circuit provided by the embodiment can also automatically adjust the grid voltage of the power amplifier, namely the NMOS tube Q2, so that the drain current is kept unchanged, thereby achieving the purpose of temperature compensation.
In an alternative embodiment, in order to improve the voltage efficiency of the third reference power supply VDD to the gate of the power amplifier, the diode in the energy storage element is replaced by a MOS transistor or a switching transistor. In this embodiment, since the MOS transistor or the switching transistor has no conduction voltage drop, the equivalent resistance of the circuit is reduced, so that the voltage efficiency from the third reference power supply VDD to the gate of the power amplifier is improved.
Fig. 5 is a circuit configuration diagram for illustrating still another specific power amplifying circuit.
As shown in fig. 5, the diode D1 in the energy storage unit in the above embodiment is replaced with an NMOS transistor Q3. The output end of the voltage comparator is connected with the grid electrode of the NMOS tube Q3 through an inverter, the source electrode of the NMOS tube Q3 is grounded, and the drain electrode of the NMOS tube Q3 is connected with the other end of the first inductor L1. When the voltage comparator outputs a high level, the NMOS tube Q1 is turned on, the NMOS tube Q2 is turned off, and the first capacitor C1 and the first inductor L1 are charged. When the voltage comparator outputs a low level, the NMOS transistor Q1 is turned off, the NMOS transistor Q2 is turned on, and the first capacitor C1, the first inductor L1, and the NMOS transistor Q2 form a current loop for discharging the stored electric energy.
Example 2
The present embodiment provides a wireless transmitting device including the power amplifying circuit of embodiment 1, the wireless transmitting device configured to:
and if the power amplifier is in the TDD working mode and reaches the maximum rated power of emission, controlling the change-over switch to be communicated with the first end and the third end, otherwise, controlling the change-over switch to be communicated with the first end and the second end.
Example 3
The present embodiment provides a wireless transmitting device including the power amplifying circuit of embodiment 1, the wireless transmitting device configured to:
and if the power amplifier is in the FDD working mode and reaches the maximum rated power, controlling the change-over switch to be communicated with the first end and the third end, otherwise, controlling the change-over switch to be communicated with the first end and the second end.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that this is by way of example only, and the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the principles and spirit of the invention, but such changes and modifications fall within the scope of the invention.
Claims (10)
1. The power amplifying circuit is characterized by comprising a power amplifier, an energy storage unit, a switching tube, a current sampling resistor, a differential amplifier, a voltage comparator and a change-over switch;
the grid electrode of the power amplifier is used for receiving radio frequency input signals and is electrically connected with one end of the energy storage unit; the first end of the power amplifier is grounded;
one end of the current sampling resistor is respectively and electrically connected with the second end of the power amplifier and the first input end of the differential amplifier, and the other end of the current sampling resistor is respectively and electrically connected with the second input end of the differential amplifier and the power supply;
the first input end of the voltage comparator is electrically connected with the output end of the differential amplifier, the second input end of the voltage comparator is connected with the first end of the change-over switch, and the output end of the voltage comparator is connected with the control end of the switching tube and used for controlling the switching tube to be turned on or off; one end of the switching tube is electrically connected with the other end of the energy storage unit, and the other end of the switching tube is connected with a third reference power supply;
the second end of the change-over switch is connected with a first reference power supply, the third end of the change-over switch is connected with a second reference power supply, wherein the voltage of the first reference power supply is the output voltage of the differential amplifier when the power amplifier is at an optimal static working point, and the voltage of the second reference power supply is the output voltage of the differential amplifier when the power amplifier is at the optimal working point and is at the maximum rated output power;
when the output power of the power amplifier reaches rated power, the change-over switch is used for communicating the first end and the third end, otherwise, the change-over switch is used for communicating the first end and the second end.
2. The power amplifier circuit of claim 1, wherein the power amplifier comprises an NMOS transistor, a first terminal of the power amplifier being a source of the NMOS transistor, and a second terminal being a drain of the NMOS transistor.
3. The power amplification circuit of claim 1, wherein the energy storage unit comprises a first inductor, a first capacitor and a diode, the grid electrode of the power amplifier is respectively connected with one end of the first inductor and one end of the first capacitor, the other end of the first inductor is respectively connected with the cathode of the diode and one end of the switching tube, and the other end of the first capacitor and the anode of the diode are grounded.
4. The power amplification circuit of claim 1, wherein the switching transistor is a MOS transistor or a triode.
5. The power amplification circuit of claim 1, further comprising a second inductance and a second capacitance;
the second inductor is connected in series between the grid electrode of the power amplifier and the energy storage unit, one end of the second capacitor is used for receiving radio frequency input signals, and the other end of the second capacitor is electrically connected with the grid electrode of the power amplifier.
6. The power amplification circuit of claim 1, further comprising a third inductance and a third capacitance;
the third inductor is connected in series between the second end of the power amplifier and the current sampling resistor, one end of the third capacitor is electrically connected with the second end of the power amplifier, and the other end of the third capacitor is used for outputting a radio frequency output signal.
7. The power amplification circuit of claim 1, further comprising a fourth capacitor having one end connected to one end of the energy storage unit and the other end grounded; and/or the number of the groups of groups,
the power amplifying circuit further comprises a fifth capacitor, one end of the fifth capacitor is connected with the third reference power supply, and the other end of the fifth capacitor is grounded.
8. The power amplifier circuit of claim 1, wherein the voltage of the third reference power supply is greater than or equal to a maximum gate voltage corresponding to the power amplifier at an optimal operating point.
9. A wireless transmitting device comprising the power amplification circuit of any of claims 1-8, the wireless transmitting device configured to:
and if the power amplifier is in the TDD working mode and reaches the maximum rated power of emission, controlling the change-over switch to be communicated with the first end and the third end, otherwise, controlling the change-over switch to be communicated with the first end and the second end.
10. A wireless transmitting device comprising the power amplification circuit of any of claims 1-8, the wireless transmitting device configured to:
and if the power amplifier is in the FDD working mode and reaches the maximum rated power, controlling the change-over switch to be communicated with the first end and the third end, otherwise, controlling the change-over switch to be communicated with the first end and the second end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011022464.4A CN112511109B (en) | 2020-09-25 | 2020-09-25 | Power amplifying circuit and wireless transmitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011022464.4A CN112511109B (en) | 2020-09-25 | 2020-09-25 | Power amplifying circuit and wireless transmitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112511109A CN112511109A (en) | 2021-03-16 |
| CN112511109B true CN112511109B (en) | 2023-10-27 |
Family
ID=74953705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011022464.4A Active CN112511109B (en) | 2020-09-25 | 2020-09-25 | Power amplifying circuit and wireless transmitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112511109B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101883461A (en) * | 2010-06-09 | 2010-11-10 | 北京交通大学 | LED adaptive constant current controller with power factor correction |
| CN103326419A (en) * | 2013-05-16 | 2013-09-25 | 国家电网公司 | Solar electricity-taking combined energy-storage uninterruptible power supply device |
| CN103731033A (en) * | 2013-12-19 | 2014-04-16 | 山东艾诺仪器有限公司 | Wide-range DC power supply with constant power output characteristic |
| CN103762231A (en) * | 2014-02-12 | 2014-04-30 | 电子科技大学 | Low-power dissipation IGBT device and peripheral circuit thereof |
| CN103973114A (en) * | 2014-05-06 | 2014-08-06 | 中国电子科技集团公司第四十一研究所 | Constant power control direct-current power supply |
| CN209844567U (en) * | 2019-02-18 | 2019-12-24 | 上海南麟电子股份有限公司 | Linear charging system and constant-current and constant-voltage control circuit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8159204B2 (en) * | 2008-09-29 | 2012-04-17 | Active-Semi, Inc. | Regulating current output from a buck converter without external current sensing |
| KR101822068B1 (en) * | 2011-11-23 | 2018-01-26 | 페어차일드코리아반도체 주식회사 | Switch control method, switch contriller, and converter comprising the switch controller |
| DE102012207147B4 (en) * | 2012-04-27 | 2016-01-21 | Infineon Technologies Ag | Method for driving power semiconductor switches |
-
2020
- 2020-09-25 CN CN202011022464.4A patent/CN112511109B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101883461A (en) * | 2010-06-09 | 2010-11-10 | 北京交通大学 | LED adaptive constant current controller with power factor correction |
| CN103326419A (en) * | 2013-05-16 | 2013-09-25 | 国家电网公司 | Solar electricity-taking combined energy-storage uninterruptible power supply device |
| CN103731033A (en) * | 2013-12-19 | 2014-04-16 | 山东艾诺仪器有限公司 | Wide-range DC power supply with constant power output characteristic |
| CN103762231A (en) * | 2014-02-12 | 2014-04-30 | 电子科技大学 | Low-power dissipation IGBT device and peripheral circuit thereof |
| CN103973114A (en) * | 2014-05-06 | 2014-08-06 | 中国电子科技集团公司第四十一研究所 | Constant power control direct-current power supply |
| CN209844567U (en) * | 2019-02-18 | 2019-12-24 | 上海南麟电子股份有限公司 | Linear charging system and constant-current and constant-voltage control circuit |
Non-Patent Citations (1)
| Title |
|---|
| 一种用于电流模Buck变换器的电流采样电路;辛杨立;王卓;贾丽伟;梁华;范子威;张志文;明鑫;张波;;微电子学(第02期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112511109A (en) | 2021-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6271727B1 (en) | High isolation RF power amplifier with self-bias attenuator | |
| US7936219B2 (en) | Power amplifier bias circuit | |
| CN106169915B (en) | Multi-gain mode power amplifier, chip and communication terminal | |
| US6121841A (en) | Transistor power amplifier for portable terminals for mobile communications | |
| US6236266B1 (en) | Bias circuit and bias supply method for a multistage power amplifier | |
| US20180309412A1 (en) | Power amplification circuit | |
| US20220006427A1 (en) | Amplifier circuit and amplifier device | |
| JP2006500884A (en) | Saturated power amplifier with switchable variable output power level | |
| US6278328B1 (en) | Power amplifier | |
| JP2020072468A (en) | Power amplifier module | |
| JP3631060B2 (en) | Linear amplifier and radio communication apparatus using the same | |
| US11469713B2 (en) | Power amplifier module | |
| CN117395761B (en) | Power supply and bias adjustable radio frequency front end module and radio frequency chip | |
| CN107306118B (en) | Power amplifying module | |
| CN111262534B (en) | Self-adaptive bias circuit for power amplifier chip | |
| CN110518883B (en) | Power amplifying circuit | |
| KR20220015809A (en) | Power amplifier, power amplifier system and operating method thereof | |
| CN112511109B (en) | Power amplifying circuit and wireless transmitting device | |
| US20230006055A1 (en) | Bipolar transistor having collector with doping concentration discontinuity | |
| US6809593B1 (en) | Power amplifier device and method thereof | |
| US11533030B2 (en) | Power amplifier module | |
| CN114039555B (en) | Power amplification system and radio frequency front end module | |
| US7474170B2 (en) | Attenuator | |
| CN211791445U (en) | Self-adaptive bias circuit for power amplifier chip | |
| JP4417069B2 (en) | Semiconductor integrated circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |