CN209894346U - Sensor and circuit thereof - Google Patents
Sensor and circuit thereof Download PDFInfo
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- CN209894346U CN209894346U CN201920863887.5U CN201920863887U CN209894346U CN 209894346 U CN209894346 U CN 209894346U CN 201920863887 U CN201920863887 U CN 201920863887U CN 209894346 U CN209894346 U CN 209894346U
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Abstract
The utility model provides a sensor and circuit thereof, include: the sensing chip S1 comprises a sensing chip S1, a first signal output end is connected with a grid electrode of the junction field effect transistor, a power supply anode is connected with a drain electrode of the junction field effect transistor, a source electrode of the junction field effect transistor is respectively connected with an output end of the sensor and one end of a first resistor, a second signal output end of the sensing chip is respectively connected with the other end of the first resistor and one end of a second resistor, and the other end of the second resistor is connected with a common grounding point. The impedance transformation effect of the utility model is basically consistent with the current application scheme, and the application requirement can be satisfied; the utility model discloses can amplify the output to sensor chip's signal, adjustment magnification that can be more nimble in a large scale.
Description
Technical Field
The utility model relates to a sensor technical field, in particular to circuit of sensor.
Background
In the field of sensors such as pyroelectric infrared sensors, the output impedance of a sensing chip is very high and cannot be directly connected with an amplifying circuit, and an impedance converter formed by active devices such as a Junction Field Effect Transistor (JFET) and the like must be connected to be connected with a subsequent signal processing circuit. In the prior art, a JFET and a sensing chip are packaged into a whole to form a complete sensor; a key performance parameter of the sensor is the intensity of an output signal of the sensor, the output signal of a sensing chip is not amplified in the existing JFET impedance converter, the intensity of the output signal of the sensor is improved in the prior art, and the method can only be started from the aspects of material formula and preparation process technology of the sensing chip, but the performance improvement of the material is very difficult in the actual situation for decades; in addition, in the prior art, an appropriate resistor is required to be connected between the external source of the sensor shell and the ground during application to extract an output signal of the sensor.
SUMMERY OF THE UTILITY MODEL
The utility model provides a pyroelectric infrared sensor impedance transformation effect can be normally realized, simultaneously the output signal of the pyroelectric infrared sensor can be amplified, and the required amplification factor can be set according to the customer requirements in the production process; simultaneously the utility model discloses connect originally externally inside source electrode and the ground draw output signal's resistance integration to the sensor housing.
In order to achieve the above object, the present invention provides the following technical solutions:
a circuit of a sensor, comprising: the sensing chip is characterized in that a first signal output end of the sensing chip is connected with a grid electrode of the junction field effect transistor, a positive electrode of a power supply is connected with a drain electrode of the junction field effect transistor, a source electrode of the junction field effect transistor is respectively connected with an output end of the sensor and one end of the first resistor, a second signal output end of the sensing chip is respectively connected with the other end of the first resistor and one end of the second resistor, and the other end of the second resistor is connected with a common grounding point.
A sensor comprises the circuit of the sensor.
Preferably, the sensing chip, the first resistor, the second resistor and the junction field effect transistor are all arranged inside the sensor shell.
Preferably, the first resistor, the second resistor and the junction field effect transistor are integrally arranged inside the sensor shell.
Preferably, the first resistor and the junction field effect transistor are both integrally arranged inside the sensor housing.
Preferably, the sensing chip and the junction field effect transistor are both arranged inside the sensor shell, and the first resistor and the second resistor are arranged outside the sensor shell.
Preferably, the sensing chip, the first resistor and the junction field effect transistor are all arranged inside the sensor shell, and the second resistor is arranged outside the sensor shell.
Preferably, the first resistor and the junction field effect transistor are both integrally arranged inside the sensor housing.
Preferably, the second resistor and the junction field effect transistor are both arranged inside the sensor housing, and the first resistor is arranged outside the sensor housing.
Preferably, the second resistor and the junction field effect transistor are both arranged inside the sensor housing, and the first resistor is arranged outside the sensor housing.
Preferably, the sensor is a pyroelectric infrared sensor, a condenser electret microphone, a condenser vibration sensor, a piezoelectric pressure sensor, or a piezoelectric crystal microphone.
Through implementing above technical scheme, have following technological effect: the utility model provides a pyroelectric infrared sensor impedance transformation effect can be normally realized, simultaneously the output signal of the pyroelectric infrared sensor can be amplified, and the required amplification factor can be set according to the customer requirements in the production process; simultaneously the utility model discloses connect originally externally inside source electrode and the ground draw output signal's resistance integration to the sensor housing. The sensor manufactured by the utility model is used, through actual test, the amplification effect of the output signal is consistent with the theory, the sensor is installed to sense the sensing distance of the finished product test, the sensing effect is directly related to the designed amplification factor and the actual signal output intensity, the performance is obviously improved, and the use is convenient and flexible; the circuit of the utility model can be integrated with JFET in the sensor shell to carry out impedance transformation and simultaneously amplify and output signals; the utility model discloses the magnification sets up extremely simple and conveniently, uses with the external circuit cooperation, and the magnification that can reduce external circuit makes the circuit more stable, also can simplify external circuit structure, also can reduce the requirement to sensor signal processing circuit. For the sensor, the performance is improved, and the integration level is improved; for the whole application system, the performance is improved, the circuit framework can be simplified, and the cost is reduced.
Drawings
Fig. 1 is a circuit diagram of the inductor according to the present invention.
Detailed Description
For better understanding of the technical solutions of the present invention, the following detailed description of the embodiments provided in the present invention is provided with reference to the accompanying drawings.
An embodiment of the utility model provides a circuit of sensor, as shown in fig. 1, a circuit of sensor, its characterized in that includes: the sensing chip S1 comprises a sensing chip S1, a first signal output end 4 of the sensing chip S1 is connected with a grid 2 of a junction field effect transistor Q1, a power supply anode 6 is connected with a drain 1 of the junction field effect transistor Q1, a source 3 of the junction field effect transistor Q1 is respectively connected with an output end 7 of a sensor and one end of a first resistor R1, a second signal output end 5 of the sensing chip S1 is respectively connected with the other end of a first resistor R1 and one end of a second resistor R2, the other end of a second resistor R2 is connected with a common ground point 8, and a resistor RG in FIG. 1 is an equivalent resistor of the sensing chip S1.
A sensor comprising the circuit may be a pyroelectric infrared sensor.
Specifically, the sensing chip S1, the first resistor R1, the second resistor R2 and the junction field effect transistor Q1 are all arranged inside the sensor housing; optionally, the first resistor R1 and the junction field effect transistor Q1 are both integrally disposed within the sensor; optionally, the first resistor R1 and the second resistor R2 and the junction field effect transistor Q1 are integrally disposed inside the sensor housing.
Specifically, the sensing chip S1 and the junction field effect transistor Q1 are both arranged inside the sensor shell, and the first resistor R1 and the second resistor R2 are arranged outside the sensor shell;
specifically, the sensing chip S1, the first resistor R1 and the junction field effect transistor Q1 are all arranged inside the sensor housing, and the second resistor R2 is arranged outside the sensor housing; optionally, the first resistor R1 and the junction field effect transistor Q1 are both integrally disposed inside the sensor housing.
Specifically, the second resistor R2 and the junction field effect transistor Q1 are both disposed inside the sensor housing, and the first resistor R1 is disposed outside the sensor housing.
In the above embodiment, the sensor is preferably a pyroelectric point infrared sensor, a condenser electret microphone, a condenser vibration sensor, a piezoelectric pressure sensor, a piezoelectric crystal microphone, or the like.
In the above embodiment, the value of the first resistor R1 is 30K, the value of the second resistor R2 is 10K, and through actual measurement and comparison, the actual test signal is increased by about 30% compared with the actual test signal when only the value of the first resistor R1 is 30K, and the sensing distance is also increased by nearly 30%.
The above is to the sensor and the circuit thereof provided by the embodiment of the present invention are introduced in detail, and to the general technical personnel in the field, according to the embodiment of the present invention, there is a change part on the specific implementation and the application range.
Claims (10)
1. A circuit for a sensor, comprising: the sensing chip is characterized in that a first signal output end of the sensing chip is connected with a grid electrode of the junction field effect transistor, a positive electrode of a power supply is connected with a drain electrode of the junction field effect transistor, a source electrode of the junction field effect transistor is respectively connected with an output end of the sensor and one end of the first resistor, a second signal output end of the sensing chip is respectively connected with the other end of the first resistor and one end of the second resistor, and the other end of the second resistor is connected with a common grounding point.
2. A sensor, characterized by a circuit comprising a sensor according to claim 1.
3. The sensor of claim 2, wherein the sensing chip, the first resistor, the second resistor, and the junction field effect transistor are disposed within a sensor housing.
4. A sensor as in claim 3 wherein the first and second resistors and the junction field effect transistor are integrally disposed within the sensor housing.
5. A sensor as claimed in claim 3, wherein the first resistor and the junction field effect transistor are integrally disposed within the sensor housing.
6. The sensor of claim 2, wherein the sensing chip and the jfet are both disposed within a sensor housing, and the first resistor and the second resistor are disposed outside the sensor housing.
7. The sensor of claim 2, wherein the sensing chip, the first resistor, and the junction field effect transistor are disposed within the sensor housing, and the second resistor is disposed outside the sensor housing.
8. The sensor of claim 7, wherein the first resistor and the junction field effect transistor are integrally disposed within the sensor housing.
9. The sensor of claim 2, wherein the second resistor and the junction field effect transistor are both disposed within the sensor housing, and the first resistor is disposed outside the sensor housing.
10. A sensor as claimed in any one of claims 2 to 9, wherein the sensor is a pyroelectric infrared sensor, a condenser electret microphone, a condenser vibration sensor, a piezoelectric pressure sensor or a piezoelectric crystal microphone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920863887.5U CN209894346U (en) | 2019-06-10 | 2019-06-10 | Sensor and circuit thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920863887.5U CN209894346U (en) | 2019-06-10 | 2019-06-10 | Sensor and circuit thereof |
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| Publication Number | Publication Date |
|---|---|
| CN209894346U true CN209894346U (en) | 2020-01-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201920863887.5U Active CN209894346U (en) | 2019-06-10 | 2019-06-10 | Sensor and circuit thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110132429A (en) * | 2019-06-10 | 2019-08-16 | 深圳市华三探感科技有限公司 | A kind of sensor and its circuit |
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2019
- 2019-06-10 CN CN201920863887.5U patent/CN209894346U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110132429A (en) * | 2019-06-10 | 2019-08-16 | 深圳市华三探感科技有限公司 | A kind of sensor and its circuit |
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