CN110132429A - A kind of sensor and its circuit - Google Patents
A kind of sensor and its circuit Download PDFInfo
- Publication number
- CN110132429A CN110132429A CN201910495998.XA CN201910495998A CN110132429A CN 110132429 A CN110132429 A CN 110132429A CN 201910495998 A CN201910495998 A CN 201910495998A CN 110132429 A CN110132429 A CN 110132429A
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- Prior art keywords
- sensor
- field effect
- effect transistor
- resistor
- resistance
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- 230000005669 field effect Effects 0.000 claims abstract description 32
- 230000003321 amplification Effects 0.000 abstract description 6
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The present invention provides a kind of sensor and its circuit, it include: sensing chip S1, the signal output first end of sensing chip S1 is connected with the grid of junction field effect transistor, positive pole is connected with the drain electrode of junction field effect transistor, the source electrode of junction field effect transistor is connected with one end of the output end of sensor and first resistor respectively, the signal output second end of sensing chip is connected with one end of the other end of first resistor and second resistance respectively, and the other end of second resistance is connected with common ground point.The impedance transform effect of the present invention and present application scheme are almost the same, are able to satisfy application requirement；The present invention can amplify output to the signal of sensing chip, can compare flexibly adjustment amplification factor in very large range.
Description
Technical field
The present invention relates to a kind of sensor technical fields, the in particular to circuit of sensor.
Background technique
It is very high in the output impedance of the sensor fields such as pyroelectric infrared sensor, sensing chip, cannot directly with put
Big circuit connection, it is necessary to connect the active devices such as JFET (technotron) composition impedance transformer, could with it is subsequent
Signal processing circuit is connected.The prior art is usually that JFET and sensing chip are encapsulated in and are integrally formed a complete sensing
Device；And a critical performance parameters of sensor are the output signal strengths of sensor, in existing JFET impedance transformer,
There is no amplifying power to the output signal of sensing chip, the prior art will improve the intensity of sensor output signal, can only be from biography
Set about in terms of sense chip material prescription and fabricating technology, and the performance raising that reality is material in decades is very
Difficult；In addition present technology needs to connect a resistance extraction appropriate between sensor housing external source and ground in application
The output signal of sensor.
Summary of the invention
The present invention, which is provided, can also release heat while normal realize to pyroelectric infrared sensor impedance change action
The output signal of electric infrared sensor amplifies, and puts required for being set in process of production according to customer demand
Big multiple；The resistance that original is externally connect to extract output signal between source electrode and ground is integrated into sensor shell by the present invention simultaneously
Internal portion.
To achieve the goals above, the present invention the following technical schemes are provided:
A kind of circuit of sensor, comprising: sensing chip, the signal output first end and junction field of sensing chip are brilliant
The grid of body pipe is connected, and positive pole is connected with the drain electrode of junction field effect transistor, the source of junction field effect transistor
Pole is connected with one end of the output end of sensor and first resistor respectively, and the signal of sensing chip output second end is respectively with the
The other end of one resistance is connected with one end of second resistance, and the other end of second resistance is connected with common ground point.
A kind of sensor, the circuit including above-mentioned sensor.
Preferably, the sensing chip, first resistor, second resistance and junction field effect transistor are arranged at sensor
Enclosure interior.
Preferably, the first resistor and second resistance and junction field effect transistor are integrally disposed in sensor housing
It is internal.
Preferably, the first resistor and junction field effect transistor are integrally disposed in inside sensor housing.
Preferably, the sensing chip and junction field effect transistor are arranged inside sensor housing, and described first
Resistance and second resistance are arranged outside sensor housing.
Preferably, the sensing chip, first resistor and junction field effect transistor are arranged inside sensor housing,
Second resistance is arranged outside sensor housing.
Preferably, the first resistor and junction field effect transistor are integrally disposed in inside sensor housing.
Preferably, the second resistance and junction field effect transistor are arranged inside sensor housing, and described first
Resistance is arranged outside sensor housing.
Preferably, the second resistance and junction field effect transistor are arranged inside sensor housing, and described first
Resistance is arranged outside sensor housing.
Preferably, the sensor is that heat releases an infrared sensor, condenser type Electret condenser microphone, condenser type vibrating sensing
Device, piezoelectric vibration pickup, piezoelectric pressure indicator or piezo crystal microphone.
By implementing above technical scheme, it is red to pyroelectricity in normal realization to have following technical effect that the present invention is provided
The output signal of pyroelectric infrared sensor can also be amplified while outer sensor impedance change action, and in life
Amplification factor required for being set according to customer demand during production；Simultaneously the present invention original be externally connect to source electrode with
The resistance that output signal is extracted between ground is integrated into inside sensor housing.Using the sensor that the present invention makes, by reality
The effect of test, output signal amplification is consistent with theory, is mounted to induction finished product test distance of reaction, and inductive effects are certain
Have with design amplification factor and actual signal output intensity it is directly related, performance boost is obvious, easy to use and flexible；The present invention
Circuit can be integrated in inside sensor housing together with JFET amplifies output to signal while carrying out impedance transformation；This
Extremely simple convenience is arranged in invention amplification factor, is used cooperatively with external circuit, the amplification factor that can reduce external circuit makes electricity
Road is more stable, also can simplify external circuit structure, can also reduce the requirement to sensor signal processing circuit.To sensor
For itself, performance is improved, integrated level is improved；For entire application system, may be used also while improving performance
To simplify circuit architecture, cost is reduced.
Detailed description of the invention
Fig. 1 provides the circuit element diagram of inductor for the present invention.
Specific embodiment
For a better understanding of the technical solution of the present invention, the implementation that the present invention is described in detail provides with reference to the accompanying drawing
Example.
The embodiment of the present invention provides a kind of circuit of sensor, as shown in Figure 1, a kind of circuit of sensor, feature exist
In, comprising: the signal output first end 4 of sensing chip S1, sensing chip S1 are connected with the grid 2 of junction field effect transistor Q1
Connect, positive pole 6 is connected with the drain electrode 1 of junction field effect transistor Q1, the source electrode 3 of junction field effect transistor Q1 respectively with
The output end 7 of sensor is connected with one end of first resistor R1, and the signal of sensing chip S1 output second end 5 is respectively with first
The other end of resistance R1 is connected with one end of second resistance R2, and the other end of second resistance R2 is connected with common ground point 8,
Resistance RG is the equivalent resistance of sensing chip S1 in Fig. 1.
A kind of sensor, the sensor including foregoing circuit, the sensor can be pyroelectric infrared sensor.
Specifically, the sensing chip S1, first resistor R1, second resistance R2 and junction field effect transistor Q1 are respectively provided with
Inside sensor housing；Optionally, the first resistor R1 and junction field effect transistor Q1 are integrally disposed in biography
In sensor；Optionally, the first resistor R1 and second resistance R2 and junction field effect transistor Q1 are integrally disposed in
Inside sensor housing.
Specifically, the sensing chip S1 and junction field effect transistor Q1 are arranged inside sensor housing, described
First resistor R1 and second resistance R2 is arranged outside sensor housing；
Specifically, the sensing chip S1, first resistor R1 and junction field effect transistor Q1 are arranged at sensor shell
Internal portion, second resistance R2 are arranged outside sensor housing；It can be with selection of land, the first resistor R1 and junction field effect transistor
Pipe Q1 is integrally disposed in inside sensor housing.
Specifically, the second resistance R2 and junction field effect transistor Q1 are arranged inside sensor housing, described
First resistor R1 is arranged outside sensor housing.
In the above embodiment, it is preferable that the sensor be heat release an infrared sensor, condenser type Electret condenser microphone,
Condenser type vibrating sensor, piezoelectric vibration pickup, piezoelectric pressure indicator or piezo crystal microphone etc..
In the above-described embodiments, the first resistor R1 value is 30K, and second resistance R2 value is 10K, by actual measurement pair
Than than only having first resistor R1 value to increase about 30% or so when 30K, distance of reaction also increases actual test signal
Nearly 30%.
It is provided for the embodiments of the invention a kind of sensor above and its circuit is described in detail, for this field
Those skilled in the art, thought according to an embodiment of the present invention has change in specific embodiments and applications
Place, in conclusion the contents of this specification are not to be construed as limiting the invention.
Claims (10)
1. a kind of circuit of sensor characterized by comprising sensing chip, the signal output first end and knot of sensing chip
The grid of type field effect transistor is connected, and positive pole is connected with the drain electrode of junction field effect transistor, junction field
The source electrode of transistor is connected with one end of the output end of sensor and first resistor respectively, the signal output second of sensing chip
End is connected with one end of the other end of first resistor and second resistance respectively, the other end and the common ground point phase of second resistance
Connection.
2. a kind of sensor, which is characterized in that the circuit including sensor as described in claim 1.
3. a kind of sensor as claimed in claim 2, which is characterized in that the sensing chip, first resistor, second resistance and
Junction field effect transistor is arranged inside sensor housing.
4. a kind of sensor as claimed in claim 3, which is characterized in that the first resistor and second resistance and junction type field effect
Transistor is answered to be integrally disposed in inside sensor housing.
5. a kind of sensor as claimed in claim 3, which is characterized in that the first resistor and junction field effect transistor are equal
It is integrally disposed in inside sensor housing.
6. a kind of sensor as claimed in claim 2, which is characterized in that the sensing chip and junction field effect transistor are equal
It is arranged inside sensor housing, the first resistor and second resistance are arranged outside sensor housing.
7. a kind of sensor as claimed in claim 2, which is characterized in that the sensing chip, first resistor and junction type field effect
Transistor is answered to be arranged inside sensor housing, second resistance is arranged outside sensor housing.
8. a kind of sensor as claimed in claim 7, which is characterized in that the first resistor and junction field effect transistor are equal
It is integrally disposed in inside sensor housing.
9. a kind of sensor as claimed in claim 2, which is characterized in that the second resistance and junction field effect transistor are equal
It is arranged inside sensor housing, the first resistor is arranged outside sensor housing.
10. a kind of sensor as described in claim 2~9 is any, which is characterized in that the sensor is that heat releases a little infrared biography
Sensor, condenser type Electret condenser microphone, condenser type vibrating sensor, piezoelectric vibration pickup, piezoelectric pressure indicator or pressure
Transistor formula microphone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910495998.XA CN110132429A (en) | 2019-06-10 | 2019-06-10 | A kind of sensor and its circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910495998.XA CN110132429A (en) | 2019-06-10 | 2019-06-10 | A kind of sensor and its circuit |
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| Publication Number | Publication Date |
|---|---|
| CN110132429A true CN110132429A (en) | 2019-08-16 |
Family
ID=67580867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910495998.XA Pending CN110132429A (en) | 2019-06-10 | 2019-06-10 | A kind of sensor and its circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110132429A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006033091A (en) * | 2004-07-12 | 2006-02-02 | Jepico Corp | Sensor unit and sensor signal processing circuit |
| CN201210089Y (en) * | 2008-06-12 | 2009-03-18 | 上海尼赛拉传感器有限公司 | Thermo release electric infrared sensor |
| JP2015152329A (en) * | 2014-02-11 | 2015-08-24 | 日本セラミック株式会社 | pyroelectric infrared sensor |
| CN109696249A (en) * | 2019-02-21 | 2019-04-30 | 杭州福感微电子有限公司 | A kind of dedicated match circuit of pyroelectricity sensitivity member |
| CN209894346U (en) * | 2019-06-10 | 2020-01-03 | 深圳市华三探感科技有限公司 | Sensor and circuit thereof |
-
2019
- 2019-06-10 CN CN201910495998.XA patent/CN110132429A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006033091A (en) * | 2004-07-12 | 2006-02-02 | Jepico Corp | Sensor unit and sensor signal processing circuit |
| CN201210089Y (en) * | 2008-06-12 | 2009-03-18 | 上海尼赛拉传感器有限公司 | Thermo release electric infrared sensor |
| JP2015152329A (en) * | 2014-02-11 | 2015-08-24 | 日本セラミック株式会社 | pyroelectric infrared sensor |
| CN109696249A (en) * | 2019-02-21 | 2019-04-30 | 杭州福感微电子有限公司 | A kind of dedicated match circuit of pyroelectricity sensitivity member |
| CN209894346U (en) * | 2019-06-10 | 2020-01-03 | 深圳市华三探感科技有限公司 | Sensor and circuit thereof |
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