CN218675829U - Temperature control device and laser system - Google Patents

Temperature control device and laser system Download PDF

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Publication number
CN218675829U
CN218675829U CN202223176183.1U CN202223176183U CN218675829U CN 218675829 U CN218675829 U CN 218675829U CN 202223176183 U CN202223176183 U CN 202223176183U CN 218675829 U CN218675829 U CN 218675829U
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temperature control
temperature
tec
control device
box
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夏文君
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Zhongke Kuyuan Technology Wuhan Co ltd
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Zhongke Kuyuan Technology Wuhan Co ltd
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Abstract

The utility model discloses a temperature control device and laser system relates to laser technical field. The temperature control device comprises a temperature control box, an outer temperature control assembly and a PCB adapter plate, wherein the temperature control box is provided with an element installation position for installing a controlled element, the outer temperature control assembly comprises an outer temperature sensor, an outer temperature control TEC and an outer temperature control MOS tube which are all installed on the temperature control box, and the PCB adapter plate is electrically connected with the outer temperature control MOS tube, the outer temperature control TEC and the outer temperature sensor. The temperature is greatly increased through the outer temperature control MOS tube, the temperature is accurately controlled to the working temperature required by the controlled element through the outer temperature control TEC, compared with the scheme of the original single TEC, the temperature control device has a wider temperature control range, the working temperature range of the controlled element is greatly improved, the wider application is facilitated, and the stable work of a laser is facilitated.

Description

Temperature control device and laser system
Technical Field
The utility model relates to a laser technical field especially relates to a temperature control device and laser system.
Background
The semiconductor laser that uses increasingly extensively can receive its self temperature influence at the wavelength of the laser that the during operation sent, because the restriction of temperature control ability, and most semiconductor laser's working area now only limits in the laboratory, perhaps ambient temperature is more stable place, and the operating temperature scope receives great restriction, needs improve urgently.
SUMMERY OF THE UTILITY MODEL
Based on the above problem, this application provides a temperature control device and laser system.
The application provides a temperature control device, including control by temperature change box, outer temperature control subassembly and PCB keysets, the control by temperature change box is provided with the component installation position that is used for installing controlled component, and outer temperature control subassembly is including all installing outer temperature sensor, outer control by temperature change TEC and outer control by temperature change MOS pipe on the control by temperature change box, and the PCB keysets all is connected with outer control by temperature change MOS pipe, outer control by temperature change TEC, outer temperature sensor electricity.
In some embodiments, the temperature control device further comprises an outer box and an inner layer temperature control assembly, the temperature control box is arranged in the outer box, the PCB pinboard is arranged between the temperature control box and the outer box, the inner layer temperature control assembly comprises an inner layer temperature sensor arranged in the temperature control box and an inner layer temperature control TEC arranged in the temperature control box, and the PCB pinboard is electrically connected with the inner layer temperature sensor and the inner layer temperature control TEC.
In some embodiments, the component mounting site is open at a rear side plate of the temperature control box; the inner layer temperature sensor is arranged on the rear side plate, and the inner layer temperature control TEC is arranged outside the bottom side plate of the temperature control box; the outer temperature sensor is arranged on the rear side plate, and the two outer temperature control TECs are respectively arranged outside the left side plate and the right side plate of the temperature control box.
In some embodiments, the temperature control device further includes two heat conducting pads, the two heat conducting pads are respectively disposed outside the two outer temperature control TECs, and the heat conducting pads are respectively connected to the outer sides of the outer temperature control TECs and the inner side of the outer box.
In some embodiments, the upper edge of the rear side plate of the temperature control box is concave, and the lower edge of the rear side plate of the temperature control box is concave to form the MOS tube mounting positions respectively, and the outer temperature control MOS tube is fixedly mounted at the MOS tube mounting positions through the MOS tube pressing plate.
In some embodiments, the bottom plate of the outer box is provided with a TEC mounting position, the TEC mounting position is in a groove shape, the TEC mounting position is arranged at the inner edge of the bottom plate, and the TEC mounting position is used for mounting the inner temperature control TEC.
In some embodiments, the controlled component includes a semiconductor laser, the semiconductor laser is mounted at the component mounting position, the front end cover of the outer box is provided with an optical window, and the inner cavity of the temperature control box is communicated with the optical window.
In some embodiments, the inner temperature sensor is adjacent to the component mounting site, the outer temperature sensor is adjacent to the periphery of the rear side plate, and the distance between the inner temperature sensor and the component mounting site is less than the distance between the outer temperature sensor and the component mounting site.
In some embodiments, the temperature control device further comprises an external ambient temperature sensor mounted on the outer case.
A laser system comprises a semiconductor laser, a controller and the temperature control device, wherein the semiconductor laser is arranged at an element mounting position, an inner cavity of a temperature control box is communicated with the semiconductor laser, and the controller is in control connection with a PCB (printed circuit board) adapter plate.
The beneficial effects of this application are as follows: the utility model discloses a temperature control device, including control by temperature change box, outer control by temperature change MOS pipe, outer control by temperature change TEC, outer temperature sensor and PCB keysets, the control by temperature change box is provided with the component installation position that is used for installing controlled element, and outer control by temperature change MOS pipe is installed at the control by temperature change box, and outer control by temperature change TEC is installed at the control by temperature change box, and outer temperature sensor is installed at the control by temperature change box, and the PCB keysets all is connected with outer control by temperature change MOS pipe, outer control by temperature change TEC, outer temperature sensor electricity. The temperature is greatly increased through the outer temperature control MOS tube, the temperature is accurately controlled to the working temperature required by the controlled element through the outer temperature control TEC, and compared with the scheme of the original single TEC, the temperature control device has a wider temperature control range, so that the working temperature range of the controlled element is greatly improved, the application is more extensive, and the stable work of a laser is facilitated.
Drawings
In order to illustrate the embodiments of the present invention or the technical solutions in the prior art more clearly, the drawings used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention.
Fig. 1 is an overall schematic view of a temperature control device provided in the present application;
FIG. 2 is an exploded view of the structure shown in FIG. 1;
FIG. 3 is a schematic diagram of a portion of the structure of FIG. 1;
fig. 4 is another view of fig. 3.
The attached drawings are marked as follows: 10-temperature control device, 100-outer box, 110-bottom plate, 111-TEC installation position, 120-front end cover, 121-optical window, 130-rear end cover, 131-electric connector installation hole, 140-upper cover, 200-temperature control box, 210-rear side plate, 211-element installation position, 212-MOS tube installation position, 220-bottom side plate, 230-left side plate, 240-right side plate, 250-top side plate, 300-inner layer temperature control assembly, 310-inner layer temperature sensor, 320-inner layer temperature control TEC, 400-outer layer temperature control assembly, 410-outer layer temperature sensor, 420-outer layer temperature control TEC, 430-outer layer temperature control MOS tube, 431-MOS tube pressing plate, 440-heat conducting pad, 500-PCB adapter plate and 20-semiconductor laser.
Detailed Description
Regarding the temperature control device of current semiconductor laser, it is a box body setting, installs a TEC in the bottom plate outside of box body, and heating, refrigeration are all realized through the TEC at the in-process of control by temperature change, and the limitation of its temperature control scope is great. For example, the working temperature of a certain laser is 26 ℃, the temperature control capability is 10 ℃ to 40 ℃, and when the ambient temperature is less than 10 ℃ or more than 40 ℃, the temperature control capability is out of the scope of the temperature control capability.
It should be noted that the TECs in this embodiment all refer to semiconductor refrigerators, and the MOS in this embodiment refers to field effect transistors.
Example 1
Referring to fig. 1 to 4, the present embodiment discloses a temperature control device 10, which includes a temperature control box 200, an outer temperature control MOS transistor 430, an outer temperature control TEC420, an outer temperature sensor 410, and a PCB interposer 500. The temperature control box 200 is provided with an element mounting position 211 for mounting a controlled element, the outer layer temperature control MOS tube 430 is mounted on the temperature control box 200, the outer layer temperature control TEC420 is mounted on the temperature control box 200, the outer layer temperature sensor 410 is mounted on the temperature control box 200, the PCB adapter plate 500 is relatively fixed with the temperature control box 200, and the PCB adapter plate 500 is electrically connected with the outer layer temperature control MOS tube 430, the outer layer temperature control TEC420 and the outer layer temperature sensor 410.
When the environmental temperature exceeds the control range of the inner temperature control system, the temperature is greatly increased through the outer temperature control MOS tube 430 or the temperature of the system is controlled to be within the temperature control range of the inner temperature control system through the outer temperature control TEC420, compared with the scheme of the original single TEC, the temperature control device has a wider temperature control range, thereby greatly improving the working temperature range of the controlled element, being beneficial to wider application and being beneficial to the stable work of a laser.
In some embodiments, referring to fig. 1 to 4, the temperature control device 10 further includes an outer box 100, the temperature control box 200 is disposed in the outer box 100, and the PCB adapter 500 is disposed between the temperature control box 200 and the outer box 100.
In some embodiments, referring to fig. 4, the temperature control device 10 includes an inner temperature control assembly 300 and an outer temperature control assembly 400, where the outer temperature control assembly 400 includes an outer temperature sensor 410, an outer temperature control TEC420, and an outer temperature control MOS transistor 430; the inner temperature control assembly 300 comprises an inner temperature sensor 310 installed on the temperature control box 200 and an inner temperature control TEC320 installed on the temperature control box 200, and the PCB adapter plate 500 is electrically connected with the outer temperature control MOS tube 430, the outer temperature control TEC420, the outer temperature sensor 410, the inner temperature sensor 310 and the inner temperature control TEC 320.
When the temperature exceeds the temperature control capability of the inner temperature control assembly 300, the temperature is rapidly adjusted to the temperature control range of the inner temperature control assembly 300 by the outer temperature control assembly 400, and the inner temperature control assembly 300 accurately adjusts the temperature to the working temperature value of the controlled element.
The controlled component may be embodied as a semiconductor laser 20, as shown in fig. 4, and accordingly, the component mounting site 211 is provided on the rear side plate 210 of the temperature controlled box 200.
The controlled element may also be in other forms, such as a rubidium bulb, with a corresponding element mounting location 211 disposed inside the temperature control box 200.
Example 2
Referring to fig. 1 to 4, the present embodiment discloses a temperature control device 10, which includes an outer case 100, a temperature control box 200, an inner temperature control assembly 300, an outer temperature control assembly 400, and a PCB interposer 500.
Fig. 1 shows an outer box 100, and referring to fig. 2, the outer box 100 includes a bottom plate 110 at a bottom side, an upper cover 140 at a top side, a front cover 120 at a front side, a rear cover 130 at a rear side, and side plates at left and right sides.
Fig. 3 illustrates the temperature controlled box 200, and referring to fig. 2 in combination, the temperature controlled box 200 includes a bottom side plate 220 at the bottom side, a top side plate 250 at the top side, a rear side plate 210 at the rear side, and a left side plate 230 and a right side plate 240 at both the left and right sides. Wherein, the temperature control box 200 is fixedly installed inside the outer box 100, fig. 2 shows that the temperature control box 200 and the outer box 100 are provided with threaded holes, and the fixed connection between the temperature control box 200 and the outer box 100 is realized by matching with bolts.
Note that the front side of the temperature control box 200 is shown in an open configuration. In other embodiments, a plate may be mounted on the front side of the temperature-sensing box 200, and only the plate needs to be provided with a light-passing hole for passing laser.
For the controlled component, the semiconductor laser 20 is taken as an example for detailed description, please refer to fig. 3 and fig. 4 in combination, a rear side plate 210 of the temperature control box 200 is provided with a component mounting position 211, fig. 3 shows a mounting position of the semiconductor laser 20, and the semiconductor laser 20 is mounted at the component mounting position 211.
It should be noted that the inner cavity of the temperature control box 200 is conducted to the semiconductor laser 20, so that the emitted laser can smoothly enter the temperature control box 200. Referring to fig. 2, the front end cover 120 of the outer case 100 is provided with an optical window 121, and an inner cavity of the temperature control box 200 is conducted to the optical window 121, so that the laser can be smoothly emitted from the optical window 121.
The temperature control device 10 of the present embodiment includes an inner temperature control assembly 300, please refer to fig. 2 to 4, wherein the inner temperature control assembly 300 includes an inner temperature sensor 310 and an inner temperature control TEC320, the inner temperature sensor 310 is mounted on the rear side plate 210 of the temperature control box 200, the inner temperature control TEC320 is mounted outside the bottom side plate 220 of the temperature control box 200, and the inner temperature control TEC320 is mounted between the bottom side plate 220 of the temperature control box 200 and the bottom plate 110 of the outer box 100. The temperature of the rear side plate 210 is obtained by the inner layer temperature sensor 310, and the inner layer temperature control TEC320 is controlled to control the semiconductor laser 20 at the working temperature.
The temperature control device 10 of the present embodiment includes an outer temperature control element 400, please refer to fig. 2 to fig. 4, the outer temperature control element 400 includes an outer temperature sensor 410, two outer temperature control TECs 420 and an outer temperature control MOS transistor 430, in detail, the outer temperature sensor 410 is installed on the rear side plate 210 of the temperature control box 200, the two outer temperature control TECs 420 are respectively installed outside the left side plate 230 and the right side plate 240 of the temperature control box 200, specifically, between the temperature control box 200 and the outer box 100, the outer temperature control MOS transistor 430 is connected to the temperature control box 200. In the preferred embodiment, the outer temperature controlled MOS transistor 430 is mounted at the rear plate 210 of the temperature controlled box 200.
In order to successfully implement the power connection, signal transmission and control of the components, the temperature control device 10 of the embodiment includes a PCB adapter board 500, and the PCB adapter board 500 is fixedly disposed between the temperature control box 200 and the outer box 100, specifically between the rear side board 210 of the temperature control box 200 and the rear end cap 130 of the outer box 100. The inner layer temperature sensor 310, the inner layer temperature control TEC320, the outer layer temperature sensor 410, the outer layer temperature control TEC420, the outer layer temperature control MOS tube 430 and the semiconductor laser 20 are all electrically connected with the PCB adapter plate 500. Referring to fig. 1 and 2, the rear end cover 130 of the outer box 100 is provided with an electrical connector mounting hole 131 for supplying power to the PCB adapter board 500 and connecting the PCB adapter board 500 with a control system.
Compared with the temperature control device 10 of the conventional semiconductor laser 20, the temperature control device 10 of the present embodiment includes an inner temperature control element 300 and an outer temperature control element 400, the inner temperature control element 300 controls the temperature of the rear plate 210 to the working temperature of the semiconductor laser 20, and the inner temperature control element 300 has a certain temperature control range; compared with the prior art, the mode that the TEC is used for both refrigerating and heating is different, regarding outer temperature control assembly 400 in the scheme, through setting two outer temperature control TECs 420 of one left and one right, the refrigerating efficiency is improved on the whole, which is equivalent to improving the upper limit value of the temperature control range of outer temperature control assembly 400, on the other hand, special outer temperature control MOS tube 430 is adopted for heating, and compared with the mode that the TEC is used for both refrigerating and heating in the prior art, the heating efficiency is improved, which is equivalent to reducing the lower limit value of the temperature control range of outer temperature control assembly 400.
Thus, the temperature control range of the inner temperature control assembly 300 is within the temperature control range of the outer temperature control assembly 400. Through the temperature control device 10 of this embodiment, in the situation that the ambient temperature surpasses the temperature control ability of inner temperature control TEC320, outer temperature control assembly 400 is as the compensation to the temperature control ability of inner temperature control assembly 300 for the inside temperature of device remains throughout in the temperature control scope of inner temperature control assembly 300, thereby has increased substantially the operating temperature scope of laser instrument 20, is favorable to more extensive application, is favorable to the laser instrument environment stability to be in under the operating temperature, is favorable to semiconductor laser instrument 20's stable work.
Still exemplified is that the operating temperature of a certain laser is 26 degrees: the temperature control range of the inner temperature control assembly 300 is 10-40 ℃, and the temperature control capability of the inner temperature control assembly 300 is enough to maintain the laser 20 at the normal working temperature; when the outer temperature sensor 410 detects that the temperature is lower than 10 ℃, the outer temperature control MOS tube 430 is started, the whole device is heated by the emitted heat, when the temperature of the temperature control box 200 is heated to 23 ℃, the outer temperature control MOS tube 430 stops working, the temperature control work is continued by the inner temperature control assembly 300 until the temperature is controlled to 26 ℃, if the temperature is detected again to be lower than 10 ℃ in the later period, the outer temperature control MOS tube 430 is started again, and the process is repeated; when the outer temperature sensor 410 detects that the temperature is higher than 40 ℃, the outer temperature control TECs 420 on the two sides are started to refrigerate the whole device, the generated heat exchanges heat with the external environment through the outer box 100 until the temperature detected by the outer temperature sensor 410 is reduced to 30 ℃, the outer temperature control TECs 420 stop working, and the temperature control work is continued by the inner temperature control assembly 300 until the temperature is controlled to 26 ℃.
In the above, the working current of the outer temperature control MOS transistor may be controlled by a PID algorithm, and the working current of the outer temperature control TEC420 may be controlled by a PID algorithm.
In some embodiments, referring to fig. 2 and fig. 3 in combination, the temperature control device 10 further includes two heat conducting pads 440, the two heat conducting pads 440 are respectively disposed outside the two outer temperature control TECs 420, and the heat conducting pads 440 are respectively connected to the outer sides of the outer temperature control TECs 420 and the inner side of the outer case 100, that is, the heat conducting pads 440 are disposed between the interlayers of the outer case 100 and the outer temperature control TECs 420. The heat conducting pad 440 is selected from a heat conducting silica gel pad, a copper pad, etc. When the outer temperature control TEC420 operates, heat generated by the outer temperature control TEC420 during refrigeration is timely transferred to the left and right side plates 240 of the outer box 100 through the heat conducting pad 440, so that heat exchange with the external environment is more sufficient.
Referring to fig. 3, the outer-layer temperature control MOS transistor is mounted at an outer edge of the temperature control box 200, where the outer edge refers to an outer edge surface of the temperature control box 200, so as to ensure smoothness of an inner cavity of the temperature control box 200. With respect to the interior cavity of the temperature-controlled box 200, it is intended to mount optical auxiliary components that may be required for the semiconductor laser 20.
It is mentioned above that the outer layer temperature control MOS transistor is preferentially installed at the rear side plate 210 of the temperature control box 200 to efficiently raise the temperature of the rear side plate 210 in operation to quickly adjust the temperature of the semiconductor laser 20.
In some embodiments, referring to fig. 2 and 3 in combination, an MOS transistor mounting location 212 is formed by recessing the upper edge of the rear side plate 210 of the temperature control box 200, an MOS transistor mounting location 212 is also formed by recessing the lower edge, and an MOS transistor pressing plate 431 is provided, the MOS transistor pressing plate 431 is used to fixedly mount the outer temperature control MOS transistor at the MOS transistor mounting location 212, and the MOS transistor pressing plate 431 is mounted on the rear side plate 210 by bolts.
Fig. 4 illustrates the inner-layer temperature-controlled TEC320, please refer to fig. 2 in combination, in some embodiments, the bottom plate 110 of the outer box 100 is provided with a TEC mounting site 111, the TEC mounting site 111 is disposed in a groove shape, the TEC mounting site 111 is disposed at the inner edge of the bottom plate 110, and the TEC mounting site 111 is used for mounting the inner-layer temperature-controlled TEC320 and plays a role of auxiliary positioning.
Regarding the inner layer temperature sensor 310 and the outer layer temperature sensor 410, both of which are mounted on the rear side plate 210, in some embodiments, the inner layer temperature sensor 310 is closer to the semiconductor laser 20 as a controlled element, and the outer layer temperature sensor 410 is closer to the outside of the device, so that a change in the ambient temperature is sensed in advance. In detail, referring to fig. 4, the inner temperature sensor 310 is close to the component mounting location 211, the outer temperature sensor 410 is close to the outer periphery of the rear side plate 210, and the distance between the inner temperature sensor 310 and the component mounting location 211 is smaller than the distance between the outer temperature sensor 410 and the component mounting location 211.
Example 3
Based on the temperature control device 10 disclosed in embodiments 1 and 2, this embodiment is further limited, and an external environment temperature sensor is further mounted on the outer case 100, and its specific function is to control the outer temperature control assembly 400 and the inner temperature control assembly to work simultaneously when the detected external environment temperature exceeds a set range.
The operation temperature of a certain laser is 26 ℃, and the temperature control range of the inner temperature control assembly 300 is 10 ℃ to 40 ℃ for illustration:
an external temperature value is obtained through an external environment temperature sensor, when the detection value exceeds the range of 10-40 ℃, the inner temperature control assembly 300 and the outer temperature control assembly 400 can be set to be in a long-term working state, and the temperature control point of the inner temperature control assembly 300 and the outer temperature control assembly 400 is set to be consistent with the working temperature of the semiconductor laser 20; in detail, when the external temperature is lower than 10 ℃, the temperature of the temperature control box 200 is directly heated to 26 ℃ by using the outer temperature control MOS tube, and when the external temperature is higher than 40 ℃, the inner temperature control TEC320 and the outer temperature control TEC420 are simultaneously started to reduce the temperature of the temperature control box 200 to 26 ℃.
Therefore, the capability of each element is fully utilized, and the applicable environment temperature range of the whole device is improved.
Example 4
Based on the temperature control device 10 disclosed in embodiment 1, embodiment 2, and embodiment 3, the present embodiment provides a laser system, which includes the temperature control device 10, the semiconductor laser 20 mounted on the temperature control device 10, and a controller for controlling the whole system, specifically, the semiconductor laser 20 is mounted at the component mounting position 211, the inner cavity of the temperature control box 200 is conducted to the semiconductor laser 20, and the controller is in control connection with the PCB adapter board 500.
While the preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the appended claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (10)

1. The utility model provides a temperature control device (10), its characterized in that, includes temperature control box (200), outer temperature control unit (400) and PCB keysets (500), temperature control box (200) are provided with component installation position (211) that are used for installing controlled element, outer temperature control unit (400) are including all installing outer temperature sensor (410), outer control by temperature change TEC (420) and outer control by temperature change MOS pipe (430) on temperature control box (200), PCB keysets (500) all with outer control by temperature change MOS pipe (430) outer control by temperature change TEC (420), outer temperature sensor (410) electricity are connected.
2. The temperature control device (10) according to claim 1, wherein the temperature control device (10) further comprises an outer case (100) and an inner temperature control assembly (300), the temperature control box (200) is disposed in the outer case (100), the PCB adapter board (500) is disposed between the temperature control box (200) and the outer case (100), the inner temperature control assembly (300) comprises an inner temperature sensor (310) mounted on the temperature control box (200) and an inner temperature control TEC (320) mounted on the temperature control box (200), and the PCB adapter board (500) is electrically connected to the inner temperature sensor (310) and the inner temperature control TEC (320).
3. The temperature control device (10) according to claim 2, wherein the component mounting site (211) is opened at a rear side plate (210) of the temperature control box (200);
the inner layer temperature sensor (310) is arranged on the rear side plate (210), and the inner layer temperature control TEC (320) is arranged outside the bottom side plate (220) of the temperature control box (200);
the outer layer temperature sensor (410) is installed on the rear side plate (210), and the two outer layer temperature control TECs (420) are respectively installed on the left side plate and the right side plate of the temperature control box (200).
4. The temperature control device (10) of claim 3, wherein the temperature control device (10) further comprises two thermal pads (440), the two thermal pads (440) are respectively disposed outside the two outer TECs (420), and the thermal pads (440) are respectively connected to the outer side of the outer TEC (420) and the inner side of the case (100).
5. The temperature control device (10) as claimed in claim 3, wherein the rear side plate (210) of the temperature control box (200) has a concave upper edge and a concave lower edge to form the MOS transistor mounting locations (212), respectively, and the outer temperature control MOS transistor is fixedly mounted at the MOS transistor mounting locations (212) through the MOS transistor pressing plate (431).
6. The temperature control device (10) of claim 2, wherein the bottom plate (110) of the outer case (100) is provided with a TEC mounting site (111), the TEC mounting site (111) being recessed, the TEC mounting site (111) being provided at an inner edge of the bottom plate (110), the TEC mounting site (111) being for mounting of the inner temperature controlled TEC (320).
7. The temperature control device (10) according to claim 2, wherein the controlled component comprises a semiconductor laser (20), the semiconductor laser (20) is mounted at the component mounting location (211), the front cover (120) of the outer case (100) is provided with an optical window (121), and the inner cavity of the temperature control box (200) is communicated to the optical window (121).
8. The temperature control device (10) according to claim 3, wherein the inner layer temperature sensor (310) is close to the component mounting site (211), the outer layer temperature sensor (410) is close to the outer periphery of the rear side plate (210), and a distance from the inner layer temperature sensor (310) to the component mounting site (211) is smaller than a distance from the outer layer temperature sensor (410) to the component mounting site (211).
9. The temperature control device (10) of any one of claims 2-8, wherein the temperature control device (10) further comprises an external ambient temperature sensor mounted on the enclosure (100).
10. A laser system, characterized by comprising a semiconductor laser (20), a controller and a temperature control device (10) according to any one of claims 1 to 9, wherein the semiconductor laser (20) is installed at the component installation site (211), an inner cavity of the temperature control box (200) is conducted to the semiconductor laser (20), and the controller is in control connection with the PCB adapter board (500).
CN202223176183.1U 2022-11-29 2022-11-29 Temperature control device and laser system Active CN218675829U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202223176183.1U CN218675829U (en) 2022-11-29 2022-11-29 Temperature control device and laser system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202223176183.1U CN218675829U (en) 2022-11-29 2022-11-29 Temperature control device and laser system

Publications (1)

Publication Number Publication Date
CN218675829U true CN218675829U (en) 2023-03-21

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CN202223176183.1U Active CN218675829U (en) 2022-11-29 2022-11-29 Temperature control device and laser system

Country Status (1)

Country Link
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