CN218497075U - Weaving electrical system is with two-way MOS pipe conduction time delay detection device - Google Patents
Weaving electrical system is with two-way MOS pipe conduction time delay detection device Download PDFInfo
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- CN218497075U CN218497075U CN202222374303.2U CN202222374303U CN218497075U CN 218497075 U CN218497075 U CN 218497075U CN 202222374303 U CN202222374303 U CN 202222374303U CN 218497075 U CN218497075 U CN 218497075U
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Abstract
A bidirectional MOS tube conduction delay detection device for a textile electric control system comprises an MCU control module, a grid drive chip, a bidirectional MOS tube grid drive circuit and an oscilloscope; the MCU control module is used for alternately sending two PWM control signals; the grid driving chip is electrically connected with the MCU control module and is provided with a signal input end I NH, a signal input end II INL, a level output end I DRVH and a level output end II DRVL; the bidirectional MOS tube grid driving circuit comprises a first grid driving sub-circuit and a second grid driving sub-circuit, wherein the current input end of the first grid driving sub-circuit is connected with a first level output end DRVH, the current input end of the second grid driving sub-circuit is connected with a second level output end DRVL, the current output end of the first grid driving sub-circuit is connected with the grid of the MOS tube N1, and the current output end of the second grid driving sub-circuit is connected with the grid of the MOS tube N2. The utility model discloses, realized the time delay to two-way MOS pipe and detected.
Description
Technical Field
The utility model relates to a weaving electrical system field especially relates to a weaving electrical system leads to time delay detection device with two-way MOS pipe.
Background
In the textile electric control system, a bidirectional MOS tube is generally applied to control the starting and stopping of various motors in the textile machinery.
The bidirectional MOS transistor integrates two independent MOS devices on one chip, as shown in fig. 1. The input end of each single MOS tube is equivalent to a very small capacitor, the process of inputting a switch excitation signal is actually the process of repeatedly charging and discharging the capacitor, and in the process of charging and discharging, the conduction and the closing of two independent MOS tubes in the bidirectional MOS tube can generate lag or delay, so that whether the delay meets the design requirement needs to be tested or verified, and the stability and the safety of the textile electric control system are prevented from being seriously influenced after the bidirectional MOS tube is applied to the textile electric control system. In addition, the delay condition of the MOS tube under the high-temperature condition is required to be considered during the test of the MOS tube, and the risk of high-temperature scald and the like is required to be avoided for the test delay under the high-temperature condition.
SUMMERY OF THE UTILITY MODEL
To prior art's weak point, the utility model provides a weaving is two-way MOS pipe conduction time delay detection device for electrical system.
A bidirectional MOS tube conduction delay detection device for a textile electric control system comprises an MCU control module, a grid driving chip, a bidirectional MOS tube grid driving circuit and an oscilloscope;
the MCU control module is used for alternately sending two PWM control signals;
the grid driving chip is electrically connected with the MCU control module and is provided with a signal input end I NH, a signal input end II INL, a level output end I DRVH and a level output end II DRVL, the signal input end I INH and the signal input end II INL are respectively used for receiving two PWM control signals from the MCU control module, in addition, the level output end I DRVH outputs a high level when the signal input end I INH receives the PWM control signals, and the level output end II DRVL outputs a high level when the signal input end II INL receives the PWM control signals;
the bidirectional MOS tube grid driving circuit comprises a first grid driving sub-circuit and a second grid driving sub-circuit, wherein the current input end of the first grid driving sub-circuit is connected with a first level output end DRVH, the current input end of the second grid driving sub-circuit is connected with a second level output end DRVL, the current output end of the first grid driving sub-circuit is connected with the grid of the MOS tube N1, and the current output end of the second grid driving sub-circuit is connected with the grid of the MOS tube N2;
and the oscilloscope is used for testing the conduction delay of the MOS tube N1 and the MOS tube N2.
Preferably, a current limiting resistor R1 is disposed in the first gate driving sub-circuit.
Preferably, a voltage dividing resistor R3 is further disposed in the first gate driving sub-circuit, one end of the voltage dividing resistor R3 is connected to a switch control pin SW in the gate driving chip, and the other end is connected to a connection point where the current limiting resistor R1 is connected to the gate of the MOS transistor N1.
Preferably, a current limiting resistor R2 is disposed in the second gate driving sub-circuit.
Preferably, a voltage dividing resistor R4 is provided in the second gate driving sub-circuit.
To sum up, the utility model discloses following beneficial effect has:
1: the utility model discloses, realized the time delay to two-way MOS pipe and detected.
2: the utility model discloses, through setting up the incubator, realized the high temperature time delay detection to two-way MOS pipe to reduce the risk that high temperature was scalded by a wide margin.
3: the MCU is used for controlling the grid driving chip and the bidirectional MOS tube grid driving circuit, so that the switching frequency of the MOS tube can be accurately controlled, and the conduction delay of the MOS tube can be conveniently tested.
Drawings
FIG. 1 is a connection diagram of a bidirectional MOS transistor conduction delay detection device;
fig. 2 is a schematic structural diagram of a bidirectional MOS transistor in the background art.
Detailed Description
The present invention will be further explained by the following embodiments with reference to the attached drawings.
The embodiment is as follows: as shown in figure 1, the conduction time delay detection device of the bidirectional MOS tube for the textile electric control system is characterized in that firstly, in the bidirectional MOS tube, the drain electrode of an MOS tube N1 is connected to a power supply voltage VDD, the source electrode of an MOS tube N2 is connected with a resistor R5 and then grounded, and the drain electrode of the MOS tube N2 is connected with the source electrode of the MOS tube N1. The delay detection device comprises an MCU control module, a grid driving chip, a bidirectional MOS tube grid driving circuit and an oscilloscope;
the MCU control module is used for alternately sending two PWM control signals; the gate driving chip is electrically connected with the MCU control module, taking an MP1907AGQ type chip as an example, the gate driving chip is provided with a signal input end I NH, a signal input end II INL, a level output end I DRVH and a level output end II DRVL, wherein the signal input end I INH and the signal input end II INL are respectively used for receiving two PWM control signals from the MCU control module, when the signal input end I INH receives one of the PWM control signals, the level output end I DRVH outputs a high level, the level output end II DRVL outputs a low level, when the signal input end II INL receives the other PWM control signal, the level output end II DRVL outputs a high level, and the level output end I DRVH outputs a low level;
the bidirectional MOS tube grid driving circuit comprises a first grid driving sub-circuit and a second grid driving sub-circuit, wherein the current input end of the first grid driving sub-circuit is connected with a first level output end DRVH, the current output end of the first grid driving sub-circuit is connected with the grid of the MOS tube N1, the current input end of the second grid driving sub-circuit is connected with a second level output end DRVL, and the current output end of the second grid driving sub-circuit is connected with the grid of the MOS tube N2;
the oscilloscope is used for testing the conduction time delay of the MOS tube N1 and the MOS tube N2, and adopts a two-channel oscilloscope which is provided with two probes.
When an oscilloscope is used for carrying out time delay detection on the MOS tube N1, one probe is connected to the grid electrode of the MOS tube N1, the other probe is connected to the drain electrode of the MOS tube N1, when the level output end I DRVH outputs a high level and the level output end II DRVL outputs a low level, the level output end I DRVH outputs a large current, the grid electrode G of the MOS tube N1 is rapidly charged, the MOS tube N1 is enabled to be conducted, after the MOS tube N1 is conducted, the voltage VDD can drive a rear electrode circuit to operate through the MOS tube N1, at the moment, the oscilloscope forms an image, and the conduction time delay of the MOS tube N1 can be judged through the image recorded by the oscilloscope.
When an oscilloscope is used for carrying out time delay detection on the MOS tube N2, one probe is connected to the grid electrode of the MOS tube N2, the other probe is connected to the drain electrode of the MOS tube N2, when the level output end two DRVL outputs high level and the level output end one DRVH outputs low level, the level output end two DRVL outputs large current, the grid electrode G of the MOS tube N2 is rapidly charged, the MOS tube N2 is enabled to be conducted, and at the moment, the conduction time delay of the MOS tube N2 can be judged through an image recorded by the oscilloscope.
According to the scheme, the time delay detection of the bidirectional MOS tube is realized, and the MCU is used for controlling the grid driving chip and the bidirectional MOS tube grid driving circuit to be matched, so that the switching frequency of the MOS tube can be accurately controlled, and the conduction time delay of the MOS tube can be conveniently tested.
Preferably, a current-limiting resistor R1 is disposed in the first gate driving sub-circuit, and the charging voltage of the gate of the MOS transistor N1 is not too large through the function of the current-limiting resistor R1, so as to protect the MOS transistor N1. Furthermore, a voltage dividing resistor R3 is further disposed in the first gate driving sub-circuit, one end of the voltage dividing resistor R3 is connected to the switch control pin SW in the gate driving chip, and the other end of the voltage dividing resistor R3 is connected to a connection point where the current limiting resistor R1 is connected to the gate of the MOS transistor N1, and the setting of the voltage dividing resistor R3 can further prevent the charging voltage of the gate of the MOS transistor N1 from being too large.
Preferably, a current limiting resistor R2 is disposed in the second gate driving sub-circuit, and the charging voltage of the gate of the MOS transistor N2 is not too large through the function of the current limiting resistor R2, so as to protect the MOS transistor N2. Furthermore, a voltage dividing resistor R4 is disposed in the second gate driving sub-circuit, one end of the voltage dividing resistor R4 is grounded, and the other end is connected to the gate of the MOS transistor N2, so as to further prevent the charging voltage of the gate of the MOS transistor N2 from being too large.
Preferably, this time delay detection device still includes the incubator, and the incubator both can heat up for the MOS pipe to provide the MOS pipe of high temperature state, also can reduce the risk that high temperature was scalded by a wide margin, during the detection, two-way MOS pipe is located the incubator.
Preferably, the above-mentioned embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the spirit and scope of the present invention. Without departing from the design concept of the present invention, various modifications and improvements made by the technical solutions of the present invention should fall within the protection scope of the present invention, and the technical contents claimed in the present invention have been fully recorded in the claims.
Claims (6)
1. A bidirectional MOS tube conduction delay detection device for a textile electric control system is characterized by comprising an MCU control module, a grid driving chip, a bidirectional MOS tube grid driving circuit and an oscilloscope;
the MCU control module is used for alternately sending two PWM control signals;
the grid driving chip is electrically connected with the MCU control module and is provided with a signal input end I INH, a signal input end II INL, a level output end I DRVH and a level output end II DRVL, the signal input end I INH and the signal input end II INL are respectively used for receiving two PWM control signals from the MCU control module, in addition, the level output end I DRVH outputs a high level when the signal input end I INH receives the PWM control signals, and the level output end II DRVL outputs a high level when the signal input end II INL receives the PWM control signals;
the bidirectional MOS tube grid driving circuit comprises a first grid driving sub-circuit and a second grid driving sub-circuit, wherein the current input end of the first grid driving sub-circuit is connected with a first level output end DRVH, the current input end of the second grid driving sub-circuit is connected with a second level output end DRVL, the current output end of the first grid driving sub-circuit is connected with the grid of the MOS tube N1, and the current output end of the second grid driving sub-circuit is connected with the grid of the MOS tube N2;
the oscilloscope is used for testing the conduction time delay of the MOS tube N1 and the MOS tube N2.
2. The conduction delay detection device of the bidirectional MOS tube for the textile electric control system as claimed in claim 1, wherein a current limiting resistor R1 is arranged in the first gate drive sub-circuit.
3. The conduction delay detection device of the bidirectional MOS tube for the textile electric control system as recited in claim 1, wherein a voltage dividing resistor R3 is further disposed in the first gate driving sub-circuit, one end of the voltage dividing resistor R3 is connected to a switch control pin SW in the gate driving chip, and the other end is connected to a connection point where the current limiting resistor R1 is connected to the gate of the MOS tube N1.
4. The conduction delay detection device of the bidirectional MOS tube for the textile electric control system as recited in claim 1, wherein a current limiting resistor R2 is arranged in the second gate drive sub-circuit.
5. The bidirectional MOS tube conduction delay detection device for the textile electric control system according to claim 1, wherein a divider resistor R4 is arranged in the second gate drive sub-circuit.
6. The bidirectional MOS tube conduction delay detection device for the textile electric control system as recited in claim 1, further comprising a temperature chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222374303.2U CN218497075U (en) | 2022-09-07 | 2022-09-07 | Weaving electrical system is with two-way MOS pipe conduction time delay detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222374303.2U CN218497075U (en) | 2022-09-07 | 2022-09-07 | Weaving electrical system is with two-way MOS pipe conduction time delay detection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218497075U true CN218497075U (en) | 2023-02-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222374303.2U Active CN218497075U (en) | 2022-09-07 | 2022-09-07 | Weaving electrical system is with two-way MOS pipe conduction time delay detection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218497075U (en) |
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2022
- 2022-09-07 CN CN202222374303.2U patent/CN218497075U/en active Active
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