CN103311976A - Battery management device, battery management method and battery management system - Google Patents
Battery management device, battery management method and battery management system Download PDFInfo
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- CN103311976A CN103311976A CN 201210066286 CN201210066286A CN103311976A CN 103311976 A CN103311976 A CN 103311976A CN 201210066286 CN201210066286 CN 201210066286 CN 201210066286 A CN201210066286 A CN 201210066286A CN 103311976 A CN103311976 A CN 103311976A
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Abstract
The invention provides a battery management device, a battery management method and a battery management system. The battery management device comprises a microcontroller, a first voltage regulator and a thermal protection circuit. The microcontroller is used for receiving and processing battery voltages of a plurality of single batteries. The first voltage regulator is connected with a power supply and the microcontroller, and is used for supplying a first work voltage to the microcontroller. The thermal protection circuit is connected with the power supply and the first voltage regulator, and is used for monitoring the temperature inside the battery management device and controlling the first voltage regulator to output or not output the first work voltage according to the temperature inside the battery management device. According to the battery management device, the battery management method and the battery management system, the overtemperature protection problem of the battery management device is solved, the circuit is easy to realize, and the cost is low.
Description
Technical field
The present invention relates to the battery management field, relate in particular to a kind of cell managing device, method and system.
Background technology
Multi-series lithium battery protection chip, for so that the voltage of every batteries be consistent, usually can integrated voltage balance circuit.When the difference between the cell voltage of maximum and the minimum cell voltage greater than the threshold value set the time, equalizing circuit is started working, and one or more batteries are discharged so that the cell voltage of every batteries reaches balanced.Yet the work of equalizing circuit can cause the temperature of chip internal to rise.Usually, the normal operating temperature range of chip is-40 degree～105 degree, surpasses that the performances of chip will descend behind 120 degree, and when the temperature of chip internal was spent above 150, chip will be damaged.
In addition, such as pressurizer integrated in the fruit chip or be referred to as to be connected with large loaded work piece in the output of voltage adjuster always, also can cause the temperature of chip internal to continue to rise.And when the heat conductivility of whole application system was very poor, the problems of excessive heat of chip will be aggravated.
Summary of the invention
The problem that the present invention solves provides a kind of cell managing device, method and system that carries out overtemperature protection.
For addressing the above problem, the invention provides a kind of cell managing device, be used for managing some monocells, comprising: microcontroller is used for receiving the cell voltage of some monocells and processing; The first voltage adjuster links to each other with power supply and microcontroller, is used to microcontroller that the first operating voltage is provided; And thermal protection circuit, link to each other with power supply and the first voltage adjuster, be used for the temperature of monitoring cell managing device inside, and control the output of the first voltage adjuster or do not export the first operating voltage according to the temperature of cell managing device inside.
The present invention also provides a kind of battery management system, comprising: some monocells are used for providing some cell voltages; Connecting circuit links to each other to receive some cell voltages with some monocells, is used for current limliting and filtering; And above-mentioned cell managing device, cell managing device links to each other with some monocells by connecting circuit, and carries out overtemperature protection by monitoring inner temperature.
The present invention also provides a kind of battery management method that is applied to cell managing device, is used for managing some monocells, comprises the first voltage adjuster, microcontroller and thermal protection circuit, and battery management method may further comprise the steps:
Provide the first operating voltage to power to microcontroller by the first voltage adjuster;
Temperature by thermal protection circuit monitoring cell managing device inside;
Control the output of the first voltage adjuster or do not export the first operating voltage according to the temperature of cell managing device inside.
Compared with prior art; the present invention controls the output of the first voltage adjuster or does not export the first operating voltage to microcontroller by the temperature of thermal protection circuit monitoring cell managing device inside; thereby when excess Temperature cell managing device being quit work lowers the temperature; solved the overtemperature protection problem of cell managing device; circuit is realized simple, and cost is low.
Description of drawings
Fig. 1 is the structural representation of the better embodiment of cell managing device of the present invention;
Fig. 2 is the structural representation of the thermal protection circuit in Fig. 1 cell managing device of the present invention;
Fig. 3 a is the structural representation of another execution mode of the bias-voltage generating circuit in the second voltage adjuster among Fig. 2;
Fig. 3 b is the structural representation of another execution mode of the bias-voltage generating circuit in the second voltage adjuster among Fig. 2;
Fig. 4 is the structural representation of an execution mode of hot detection module among Fig. 2;
Fig. 5 is the structural representation of another execution mode of hot detection module among Fig. 2;
Fig. 6 is the structural representation of the better embodiment of battery management system of the present invention;
Fig. 7 is the circuit diagram of using an execution mode of battery management system of the present invention;
Fig. 8 is the flow chart of the better embodiment of battery management method of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Set forth in the following description a lot of details so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subjected to the restriction of following public specific embodiment.
The embodiment of the invention provides a kind of cell managing device, is used for managing some monocells, and this cell managing device comprises microcontroller, the first voltage adjuster and thermal protection circuit.Microcontroller receives the cell voltage of some monocells and processes.The first voltage adjuster links to each other with power supply and microcontroller, is used to microcontroller that the first operating voltage is provided.Thermal protection circuit links to each other with power supply and the first voltage adjuster, is used for the temperature of monitoring cell managing device inside, and controls the output of the first voltage adjuster or do not export the first operating voltage according to the temperature of cell managing device inside.The present invention controls the output of the first voltage adjuster or does not export the first operating voltage to microcontroller by the temperature of thermal protection circuit monitoring cell managing device inside, has solved the overtemperature protection problem of cell managing device, and circuit is realized simple, and cost is low.
As shown in Figure 1; in the present embodiment, cell managing device 100 comprises microcontroller 110, the first voltage adjuster 120, thermal protection circuit 130, analog to digital converter 140, multiplexer 150, balance module 160, band gap reference 170 and clock oscillator 180.Microcontroller 110 is used for receiving the cell voltage of some monocells and carries out data and process.The first voltage adjuster 120 links to each other with power supply VCC and microcontroller 110, is used to microcontroller 110 that the first operating voltage is provided, such as the voltage of 3.3V.Thermal protection circuit 130 links to each other with power supply VCC and the first voltage adjuster 120; the temperature that is used for monitoring cell managing device 100 inside, and control the first voltage adjuster 120 according to the temperature of cell managing device 100 inside and export or do not export the first operating voltage.In one embodiment, cell managing device 100 comprises some battery pin BAT0-BATN (among Fig. 1 take N=12 as example), is used for linking to each other with some monocells.These some monocells can be, but be not restricted to lithium battery or lead-acid battery.
Analog to digital converter 140 links to each other with the first voltage adjuster 120 and microcontroller 110; be used for receiving the first operating voltage; and the cell voltage of some monocells is carried out analog-to-digital conversion process to offer microcontroller 110, such as carrying out voltage measurement and overvoltage, under-voltage protection etc.Multiplexer 150 links to each other with some monocells and microcontroller 110, is used for some monocells are selected.Balance module 160 links to each other with some monocells, is used for selected monocell is carried out electric voltage equalization, and in one embodiment, balance module 160 comprises a plurality of equalizing circuits, and each equalizing circuit is continuous with corresponding monocell.Band gap reference 170 links to each other with the first voltage adjuster 120 and analog to digital converter 140, be used for to receive the first operating voltage and provides reference voltage for analog to digital converter 140.Clock oscillator 180 links to each other with the first voltage adjuster 120 and microcontroller 110, be used for to receive the first operating voltage and provides clock signal for microcontroller 110.
In one embodiment, when the temperature of cell managing device 100 inside during greater than the first threshold values, thermal protection circuit 130 output disable signal are controlled the first voltage adjuster 120 and are not exported the first operating voltage; When the temperature of cell managing device 100 inside during less than the second threshold values, thermal protection circuit 130 output enable signal controlling the first voltage adjuster 120 outputs the first operating voltage.
Such as; when thermal protection circuit 130 detects the temperature of cell managing device 100 inside greater than the first threshold values; as surpassing 145 when spending; thermal protection circuit 130 will be exported disable signal and turn-off the first voltage adjuster 120; microcontroller 110 and other circuit by 120 power supplies of the first voltage adjuster have so also just been turn-offed simultaneously; such as analog to digital converter 140, band gap reference 170 and clock oscillator 180; therefore; cell managing device 100 quits work or is referred to as the pattern of deactivating, and enters the overtemperature protection pattern and lowers the temperature.After this; whether thermal protection circuit 130 continues the temperature of monitoring battery management devices 100 less than the second threshold values; as whether being lower than 120 degree; if the temperature of cell managing device 100 drops to below 120 degree; thermal protection circuit 130 will the output enable signal; again enable the first voltage adjuster 120; so that the first voltage adjuster 120 output the first operating voltages (such as 3.3V) are microcontroller 110; analog to digital converter 140; band gap reference 170 and clock oscillator 180 power supplies; thereby so that cell managing device 100 withdraws from the overtemperature protection pattern, reenter mode of operation.
As shown in Figure 2, in the present embodiment, thermal protection circuit 130 comprise second voltage adjuster 210, hot detection module 220, drive circuit 230 and with door 240.Second voltage adjuster 210 links to each other with power supply VCC, is used for output the second operating voltage VREGH, such as the voltage of 10V.Hot detection module 220 links to each other with second voltage adjuster 210, the temperature that is used for receiving the second operating voltage VREGH and monitors cell managing device 100 inside, and control the first voltage adjuster 120 according to the temperature output temperature detection signal of cell managing device 100 inside and export or do not export the first operating voltage VREG.
In one embodiment, second voltage adjuster 210 comprises bias-voltage generating circuit 212 and NMOS field effect transistor MN21.Bias-voltage generating circuit 212 links to each other with power supply VCC to produce bias voltage VB1, such as the voltage of 11V.The grid of NMOS field effect transistor MN21 links to each other to receive bias voltage VB1 with bias-voltage generating circuit 212, its drain electrode links to each other with power supply VCC, and its source electrode links to each other to export the second operating voltage VREGH with hot detection module 220.
In one embodiment, bias-voltage generating circuit 212 comprises resistance R 21 and voltage stabilizing didoe Z21, the plus earth of voltage stabilizing didoe Z21, and its negative electrode links to each other with power supply VCC by resistance R 21, and its anode links to each other with the grid of NMOS field effect transistor MN21.
Drive circuit (or being referred to as the second operating voltage supervisory circuit) 230 links to each other with second voltage adjuster 210 and hot detection module 220, is used for output drive signal to enable or the hot detection module 220 of forbidden energy.In one embodiment, drive circuit 230 comprises voltage follower 232, one-stage amplifier 234 and phase inverter 236.Voltage follower 232 links to each other with second voltage adjuster 210, is used for following the second operating voltage VREGH.One-stage amplifier 234 links to each other with second voltage adjuster 210 and voltage follower 232, is used for the output voltage of voltage follower 232 is carried out the single-stage amplification.Phase inverter 236 links to each other with second voltage adjuster 210 and one-stage amplifier 234, is used for the voltage of one-stage amplifier 234 outputs is carried out paraphase with output drive signal.In one embodiment, voltage follower 232 comprises resistance R 22 and voltage stabilizing didoe Z22.The negative electrode of voltage stabilizing didoe Z22 links to each other to receive the second operating voltage VREGH with second voltage adjuster 210, and its anode is by resistance R 22 ground connection.In one embodiment, one-stage amplifier 234 comprises resistance R 23 and NMOS field effect transistor MN22.The grid of NMOS field effect transistor MN22 links to each other with the anode of voltage stabilizing didoe Z22, its drain electrode links to each other with the input of phase inverter 236, and connect second voltage adjuster 210 to receive the second operating voltage VREGH, the source ground of NMOS field effect transistor MN22 by resistance R 23.
Link to each other with hot detection module 220 and drive circuit 230 with the input of door 240, the temperature detection signal of the driving signal of drive circuit 230 output and 220 outputs of hot detection module by with door 240 output enable signal or disable signal, be used for control the first voltage adjuster 120 and export or do not export the first operating voltage VREG.
Particularly, when the voltage of power supply VCC during greater than the puncture voltage VZ1 (namely bias voltage VB1) of voltage stabilizing didoe Z21, the second operating voltage VREGH=VB1-VTH_MN21=VZ1-VTH_MN21 (wherein, VTH_MN21 is the threshold voltage of NMOS field effect transistor MN21) of second voltage adjuster 210 outputs; When the voltage of power supply VCC during less than the puncture voltage VZ1 of voltage stabilizing didoe Z21, the voltage of the second operating voltage VREGH is with regard to the variation of following power supply VCC and change, i.e. the second operating voltage VREGH=VCC-VTH_MN21.
When the voltage of the second operating voltage VREGH during greater than the puncture voltage VZ2 of voltage stabilizing didoe Z22, the voltage VSFH=VREGH-VZ2 of voltage follower 232 outputs; When the voltage of the second operating voltage VREGH during less than the puncture voltage VZ2 of voltage-stabiliser tube Z22, the voltage of voltage follower 232 just equals 0V, i.e. VSFH=0V all the time.As the output voltage V SFH of voltage follower 232 during greater than the threshold V T H_MN22 of NMOS field effect transistor MN22, namely, when the voltage of the second operating voltage VREGH during greater than both sums of threshold V T H_MN22 of the puncture voltage VZ2 of voltage-stabiliser tube Z22 and NMOS field effect transistor MN22, NMOS field effect transistor MN22 conducting, thereby so that the input of phase inverter 236 is low level, the output of phase inverter 236 is high level, and namely the driving signal of drive circuit 230 output high level is to open hot detection module 220.Therefore, when hot detection module 220 does not detect excess temperature, the temperature detection signal of its output is high level, the driving signal of the temperature detection signal of high level and high level enables the first voltage adjuster 120 by the enable signal with door 240 output high level, so that the first voltage adjuster 120 outputs the first operating voltage VREG, such as the voltage of 3.3V.When hot detection module 220 detects excess temperature, the temperature detection signal of its output is low level, the driving signal of low level hot detection signal and high level by with disable signal forbidden energy first voltage adjuster 120 of door 240 output low levels so that the first voltage adjuster 120 is not exported the first operating voltage VREG.
Wherein, voltage follower 232, one-stage amplifier 234 and phase inverter 236 are be used to guaranteeing the threshold V T H_MN22 sum of the second operating voltage VREGH greater than puncture voltage VZ2 and the NMOS field effect transistor MN22 of voltage stabilizing didoe Z22.In this better embodiment, when only guaranteed the second operating voltage VREGH was greater than the threshold V T H_MN22 sum of the puncture voltage VZ2 of voltage stabilizing didoe Z22 and NMOS field effect transistor MN22, drive circuit 230 is the hot detection module 220 of drive of exportable high level.Otherwise, if the enough higher positions of the undertension of the second operating voltage VREGH start hot detection module 220, may cause hot detection module 220 work unreliable, can not correctly carry out overtemperature protection.Wherein, one-stage amplifier 234 and phase inverter 236 are used for the level shaping, this is because voltage follower 232 outputs to the voltage VSFH of NMOS field effect transistor MN22 grid, its voltage range is not 0V～VREGH, but 0V～(VREGH-VZ2), therefore need to carry out level by one-stage amplifier 234 is amplified to 0V～VREGH to drive hot detection module 220.Phase inverter 236 is be used to carrying out level shaping, paraphase and increase driving force.
Therefore; in the cell managing device 100 of the present invention; thermal protection circuit 130 is the second operating voltage VREGH power supplies that the second voltage adjuster 210 by inside provides; power voltage supply such as 10V; rather than directly powered by power supply VCC; therefore can reduce the requirement of withstand voltage of device in the thermal protection circuit 130, and improve its PSR (Power Supply Rejection, Power Supply Rejection Ratio).In addition; thermal protection circuit 130 is not by 120 power supplies of the first voltage adjuster equally; therefore as long as work as the supply voltage VCC of cell managing device 100 above the threshold value VPOR1 that sets (wherein; VPOR1=VTH_MN21+VZ2+VTH_MN22; VZ2 is the puncture voltage of voltage stabilizing didoe Z22; VTH_MN21 is the threshold voltage of NMOS field effect transistor MN21, and VTH_MN22 is the threshold voltage of NMOS field effect transistor MN22), thermal protection circuit 130 is just started working.After this, as long as the supply voltage VCC of cell managing device 100 is not less than the threshold value VPOR1 of setting, thermal protection circuit 130 will continuous firing carry out overheated detection.Therefore, thermal protection circuit 130 independent operatings, safe and reliable.
Shown in Fig. 3 a, in another embodiment, bias-voltage generating circuit 212 comprises current mirroring circuit 310, the first load circuit 320 and the second load circuit 330.Current mirroring circuit 310 links to each other with power supply VCC, for generation of image current.The first load circuit 320 links to each other with current mirroring circuit 310, is used for drive current mirror circuit 310 and produces image current.The second load circuit 330 links to each other with current mirroring circuit 310, is used for receiving image current to produce bias voltage VB1 to offer NMOS field effect transistor MN21.In the embodiment of Fig. 3 a, this current mirroring circuit 310 comprises PMOS field effect transistor MP31, MP32 and MP33.The source electrode of PMOS field effect transistor MP31, MP32 and MP33 links to each other with power supply VCC.The grid of PMOS field effect transistor MP31, MP32 and MP33 links to each other to consist of current mirroring circuit with the drain electrode of PMOS field effect transistor MP31.The first load circuit 320 comprises NMOS field effect transistor MN31, MPN2, triode QP31, QP32 and resistance R 31.The drain electrode of NMOS field effect transistor MN31, MN32 links to each other with the drain electrode of PMOS field effect transistor MP31, MP32 respectively.The grid of NMOS field effect transistor MN31, MN32 links to each other with the drain electrode of NMOS field effect transistor MN32.The source electrode of NMOS field effect transistor MN31 links to each other with the emitter of triode QP31 by resistance R 31.The source electrode of NMOS field effect transistor MN32 links to each other with the emitter of triode QP32.The base stage of triode QP31, QP32 and grounded collector.The second load circuit 330 comprises resistance R 32.The drain electrode of PMOS field effect transistor MP33 is by resistance R 32 ground connection, and output offset voltage VB1, and bias voltage VB1 exports the second operating voltage VREGH by NMOS field effect transistor MN21 again.
Shown in Fig. 3 b, the second load circuit 340 comprises the PMOS field effect transistor MPD1-MPD3 of series connection in another embodiment.The drain electrode of PMOS field effect transistor MP33 in the source electrode of PMOS field effect transistor MPD1 and the current mirroring circuit 310 links to each other.The grid of PMOS field effect transistor MPD1 links to each other with the source electrode of drain electrode with PMOS field effect transistor MPD2.The grid of PMOS field effect transistor MPD2 links to each other with the source electrode of drain electrode with PMOS field effect transistor MPD3.Grid and the grounded drain of PMOS field effect transistor MPD3.In the present embodiment, the number of the PMOS field effect transistor that the second load circuit 340 is included should not be restricted, and can correspondingly increase or reduce according to the requirement of the parameter of device and circuit.In other execution mode, this second load circuit 340 can also be the diode that comprises a plurality of series connection.
As shown in Figure 4, in one embodiment, hot detection module 220 comprises start-up circuit 410, current generating circuit 420, reference voltage generating circuit 430, temperature measuring circuit 440, comparator 450, phase inverter 460 and delay circuit 470.Current generating circuit 420 links to each other to receive the second operating voltage VREGH with second voltage adjuster 210, and for generation of drive current IPTAT.Temperature measuring circuit 440 links to each other with current generating circuit 420 and second voltage adjuster 210, with reception drive current IPTAT and the second operating voltage VREGH, and for the temperature and the output temperature measuring voltage VTS that monitor cell managing device 100 inside.Comparator 450 links to each other to receive the second operating voltage VREGH with second voltage adjuster 210, and links to each other to receive temperature survey voltage VTS with temperature measuring circuit 440, and produces temperature detection signal THMP_N according to temperature survey voltage VTS.
Start-up circuit 410 links to each other with current generating circuit 420, for generation of starting resistor to current generating module 420 to produce drive current IPTAT.In one embodiment, current generating circuit 420 comprises current mirroring circuit 422 and load circuit 424, current mirroring circuit 422 links to each other to receive the second operating voltage VREGH with second voltage adjuster 210, and links to each other to produce drive current IPTAT with load circuit 424.In one embodiment, current mirroring circuit 422 comprises PMOS field effect transistor MP41-MP44.The source electrode of PMOS field effect transistor MP41-MP44 connects second voltage adjuster 210 to receive the second operating voltage VREGH.The common gate of PMOS field effect transistor MP41-MP44 links to each other to consist of current mirroring circuit with the drain electrode of PMOS field effect transistor MP41.The drain electrode of PMOS field effect transistor MP41, MP42 links to each other with load circuit 424.The drain electrode of PMOS field effect transistor MP43 links to each other to provide drive current IPTAT with reference voltage generating circuit 430.The drain electrode of PMOS field effect transistor MP44 links to each other to provide drive current IPTAT with temperature measuring circuit 440.In one embodiment, load circuit 424 comprises NMOS field effect transistor MN41, MN42, PNP triode QP41, QP42 and resistance R 41.The drain electrode of NMOS field effect transistor MN41, MN42 is link to each other corresponding with the drain electrode of PMOS field effect transistor MP41, MP42 respectively.The common gate of NMOS field effect transistor MN41, MN42 links to each other with the drain electrode of NMOS field effect transistor MN42.The source electrode of NMOS field effect transistor MN41 links to each other with the emitter of PNP triode QP41 by resistance R 41.The source electrode of NMOS field effect transistor MN42 links to each other with the emitter of PNP triode QP42.The collector electrode of PNP triode QP41, QP42 and the equal ground connection of common base.
Reference voltage generating circuit 430 links to each other with current generating module 420 and with second voltage adjuster 210 and receives drive current IPTAT and the second operating voltage VREGH for generation of reference voltage V BG and be input to the inverting input of comparator 450.In one embodiment, reference voltage generating circuit 430 comprises PNP triode QP43 and resistance R 42, base stage and the grounded collector of PNP triode QP43, its emitter links to each other to receive drive current IPTAT by resistance R 42 with current generating circuit 420, and links to each other with output reference voltage VBG with the inverting input of comparator 450.
In one embodiment, temperature detecting module 440 comprises resistance R 43, resistance R 44 and NMOS field effect transistor MN43.The drain electrode of NMOS field effect transistor MN43 links to each other to receive drive current IPTAT by resistance R 43 with current generating circuit 420, and links to each other with input temp measuring voltage VTS with the in-phase input end of comparator 450; The source electrode of NMOS field effect transistor MN43 is by resistance R 44 ground connection; The grid of NMOS field effect transistor MN43 links to each other with the output of phase inverter 460.
Particularly, please in the lump with reference to figure 2, when the voltage of the second operating voltage VREGH surpasses both sums of threshold V T H_MN22 of the puncture voltage VZ2 of voltage stabilizing didoe Z22 and NMOS field effect transistor MN22, the driving signal of phase inverter 236 outputs is high level, therefore hot detection module 220 is started working, current generating circuit 420 produces a drive current IPTAT with temperature relation in direct ratio, flows through resistance R 42 and PNP triode QP43, obtains the reference voltage V BG of zero-temperature coefficient.Simultaneously, drive current IPTAT also flows through resistance R 43 and R44, produces the temperature survey voltage VTS with temperature relation in direct ratio.Rising along with temperature, pressure drop on resistance R 43, the R44 constantly increases, when temperature during greater than the first threshold values, such as surpassing 145 when spending, the temperature detection signal THMP of comparator 450 outputs overturns, i.e. the temperature detection signal THMP of comparator 450 output high level.After process phase inverter 460 carries out shaping, paraphase and enhancing driving, carry out the delay of a period of time (such as approximately 10～50uS) through delay circuit 470 again, temperature detection signal THMP_N becomes low level, thereby the driving signal of the high level of drive circuit 230 outputs is by producing disable signal to turn-off the first voltage adjuster 120 with door 240 in Fig. 2.Wherein, it is for anti-interference that temperature detection signal THMP_B postpones by delay circuit 470, thereby output temperature detection signal THMP_N offers and door 240.
Wherein, NMOS field effect transistor MN43 and resistance R 44 consist of sluggish.When temperature is not spent above 145, temperature survey voltage VTS (is VTS＜VBG) less than reference voltage V BG, the temperature detection signal THMP of comparator 450 outputs is low level, temperature detection signal THMP_N after process paraphase and the delay is high level, enable the first voltage adjuster 120 with door 240 output enable signals, this moment, NMOS field effect transistor MN43 conducting namely was equivalent to IPTAT*R43＜VBG this moment with short circuit resistance R 44 because temperature detection signal THMP_B is high level.After temperature surpasses 145 degree; temperature survey voltage VTS (is VTS＞VBG) greater than reference voltage V BG; namely be equivalent to IPTAT*R43＞VBG; the temperature detection signal THMP of comparator 450 outputs is high level; temperature detection signal THMP_N is low level after process paraphase and the delay; turn-off the first voltage adjuster 120 with door 240 output disable signal; thereby make cell managing device 100 pattern of deactivating; entering the overtemperature protection pattern lowers the temperature; this moment, NMOS field effect transistor MN43 was turned off, and resistance R 43 and R44 combine the formation temperature inductive reactance.Because this moment, resistance was larger, therefore only need less electric current, temperature survey voltage VTS just can be lower than reference voltage V BG, thereby so that comparator 450 overturns, form sluggish.Because drive current IPTAT and temperature relation in direct ratio; therefore when temperature during less than the second threshold values; below drop in temperature to 120 degree; when being IPTAT* (R43+R44)＜VBG; the temperature detection signal THMP of comparator 450 outputs is low level; temperature detection signal THMP_N after process paraphase and the delay is high level; enable the first voltage adjuster 120 with door 240 output enable signals; so that cell managing device 100 is released the overtemperature protection pattern, reenter normal mode of operation.
Fig. 5 is the another kind of execution mode of hot detection module 220.As shown in Figure 5, hot detection module 220 comprises start-up circuit 410, current generating circuit 520, temperature measuring circuit 440, comparator 550, phase inverter 460 and delay circuit 470.Wherein, the element that Fig. 5 is identical with Fig. 4 label has similar 26S Proteasome Structure and Function, does not repeat them here.Wherein, because hot detection module 220 does not have reference voltage generating circuit 430 among the embodiment of Fig. 5, so current generating circuit 520 compares with the current generating circuit 420 among Fig. 4, lacked PMOS field effect transistor MP43 in the current mirroring circuit 522.
In the present embodiment, comparator 550 comprises current mirroring circuit 552, core circuit 554 and one-stage amplifier 556.Current mirroring circuit 552 links to each other to receive the second operating voltage VREGH with second voltage adjuster 210, and produces image current.Core circuit 554 links to each other to receive image current with current mirroring circuit 554, and with temperature measuring circuit 440 receiving temperature survey voltage VTS, and according to temperature survey voltage VTS output temperature detection signal THMP.One-stage amplifier 556 links to each other with core circuit 554, is used for receiving temperature detection signal THMP and carrying out single-stage and amplify to output to phase inverter 460.
In one embodiment, current mirroring circuit 552 comprises PMOS field effect transistor MP51 and MP52.The source electrode of PMOS field effect transistor MP51 and MP52 links to each other to receive the second operating voltage VREGH with second voltage adjuster 210, and the common gate of PMOS field effect transistor MP51 and MP52 links to each other to consist of current mirroring circuit with the drain electrode of PMOS field effect transistor MP51.In one embodiment, core circuit 554 comprises NPN triode QP51, QP52 and resistance R 51, R52.The collector electrode of NPN triode QP51, QP52 links to each other with the drain electrode of PMOS field effect transistor MP51 and MP52 respectively, the common base of NPN triode QP51, QP52 links to each other to receive temperature survey voltage VTS with temperature measuring circuit 440, the emitter of NPN triode QP41 is by resistance R 51 and resistance R 52 ground connection.The emitter of NPN triode QP52 is by resistance R 52 ground connection.In one embodiment, one-stage amplifier 556 comprises PMOS field effect transistor MP53 and resistance R 53.The source electrode of PMOS field effect transistor MP53 links to each other to receive the second operating voltage VREGH with second voltage adjuster 210, and the drain electrode of the PMOS field effect transistor MP52 in its grid and the current mirroring circuit 552 links to each other, and its drain electrode is by resistance R 53 ground connection.
In the present embodiment; when the temperature of cell managing device 100 inside is spent above 145; namely the temperature survey voltage VTS when temperature measuring circuit 440 outputs surpasses set point; during such as 1.2V; the collector current of NPN triode QN52 in the core circuit 554 begins the image current greater than current mirroring circuit 552 generations; thereby so that PMOS field effect transistor MP53 conducting; therefore the temperature detection signal THMP of comparator 550 outputs is high level; temperature detection signal THMP_N is low level after process paraphase and the delay; therefore thermal protection circuit 220 output disable signal are controlled the first voltage adjuster 120 and are not exported the first operating voltage VREG; thereby the pattern so that cell managing device 100 is deactivated enters the overtemperature protection pattern and lowers the temperature.In like manner; continue monitoring temperature by temperature measuring circuit 440; when the temperature of cell managing device 100 inside is lower than 120 when spending; thermal protection circuit 220 output enable signal controlling the first voltage adjuster 120 outputs the first operating voltage VREG; thereby so that cell managing device 100 withdraws from the overtemperature protection pattern, reenter mode of operation.
In other embodiments; excess temperature in the hot detection module 220 detects can multiple implementation; such as; in another embodiment; by the temperature of monitoring cell managing device 100 inside and the electric current that produces a negative temperature coefficient; the electric current of positive temperature coefficient and the electric current of negative temperature coefficient are compared, thereby control 210 outputs of the first voltage adjuster or do not export the first operating voltage, also can realize overheat protective function.
As shown in Figure 6, the invention provides a kind of battery management system 600, comprise storage battery 610, connecting circuit 620 and cell managing device 630.Wherein, storage battery 610 comprises the monocell CELL_1-CELL_N (among Fig. 6 take N=8 as example) of some series connection.Wherein, cell managing device 630 has the 26S Proteasome Structure and Function among Fig. 1-Fig. 5, does not repeat them here.
Cell managing device 630 links to each other with some monocell CELL_1-CELL_8 in the storage battery 610 by connecting circuit 620; cell managing device 630 carries out overtemperature protection by monitoring inner temperature; thereby some monocell CELL_1-CELL_8 are further controlled, such as charging control, balanced control etc.Wherein, cell managing device 630 comprises battery pin BAT0-BAT8 and power pins VCC, grounding pin GND.Connecting circuit 520 comprises capacitor C 1-C8, Cvcc and resistance R 0-R8, Rvcc.The positive pole of monocell CELL1-CELL8 links to each other with the battery pin BAT0-BAT8 of cell managing device 630 by resistance R 0-R8 respectively with negative pole.The battery pin BAT0-BAT8 of cell managing device 630 also links to each other by capacitor C 1-C8 respectively between any two.The grounding pin GND ground connection of cell managing device 630.The power pins VCC of cell managing device 630 passes through capacitor C vcc ground connection, and connects the positive pole of storage battery 610 by resistance R vcc.
As shown in Figure 7, in one embodiment, battery management system 600 also comprises charging detecting circuit 710, links to each other with the thermal protection circuit 220 of cell managing device 630.Whether charge by the connecting charger (not shown) for detection of storage battery 610 for charging detecting circuit 710, and output charging inspection side signal CHG_IN, charging inspection side signal CHG_IN and temperature detection signal THMP_N and driving signal in the lump by with door 240.Cell managing device 630 is by monitoring inner temperature and controlling 120 outputs of the first voltage adjuster or do not export the first operating voltage VREG according to the charging detection signal CHG_IN that charging detecting circuit 710 is exported.
Particularly, insert charger when the outside, the charging inspection side signal CHG_IN of the inspection lateral circuit of charging 710 outputs becomes high level; at this moment; if the temperature detection signal THMP_N of thermal protection circuit 130 outputs is low level, even insert charger, also can't enable the first voltage adjuster 120.Compared to prior art; link to each other with the first voltage adjuster 120 and powered by the first operating voltage VREG such as overheating protection circuit; it is overheated to cause with heavy load (namely this heavy load also is the first operating voltage VREG power supply by 120 outputs of the first voltage adjuster) in the output of the first voltage adjuster 120; so that cell managing device 630 is when quitting work, thermal protection circuit also can quit work.At this moment; in case insertion charger; the internal temperature that can not guarantee cell managing device got back to safe temperature range (following such as 120 degree) then cell managing device of the prior art can reenter normal mode of operation again, therefore can not reach safe overtemperature protection.And charging is examined lateral circuit 710 in conjunction with thermal protection circuit 130 in the cell managing device 630 of the present invention; can avoid the appearance of this situation; therefore the temperature that can guarantee cell managing device 630 is less than the second threshold values, as is lower than 120 when spending, and just can reenter normal mode of operation.
As shown in Figure 8; the invention provides a kind of battery management method 800 that is applied to above-mentioned cell managing device 100; cell managing device 100 comprises microcontroller 110, the first voltage adjuster 120 and thermal protection circuit 130, and battery management method may further comprise the steps.
Step S802: provide the first operating voltage to microcontroller 110 power supplies by the first voltage adjuster 120.
Step S804: by the temperature of thermal protection circuit 130 monitoring cell managing devices 100 inside.
Step S806: control 120 outputs of the first voltage adjuster or do not export the first operating voltage according to the temperature of cell managing device 100 inside.
In one embodiment, battery management method 800 of the present invention also comprises step: give thermal protection circuit 130 power supplies by second voltage adjuster 210.
In one embodiment; battery management method 800 of the present invention also comprises step: when the temperature of cell managing device 100 inside during greater than the first threshold values, control the first voltage adjuster 120 by thermal protection circuit 130 output disable signal and do not export the first operating voltage.
In one embodiment, battery management method 800 of the present invention also comprises step: when the temperature of cell managing device 100 during less than the second threshold values, by thermal protection circuit 130 output enable signal controlling the first voltage adjuster 120 outputs the first operating voltage.
In one embodiment, battery management method 800 of the present invention also comprises step:
Measure the temperature of cell managing device 100 inside and produce temperature survey voltage VTS by temperature measuring circuit 440;
Produce reference voltage V BG by reference voltage generating circuit 430;
Temperature survey voltage VTS is compared with reference voltage V BG;
Therefore; the present invention controls 120 outputs of the first voltage adjuster or does not export the first operating voltage to microcontroller 110 by the temperature of thermal protection circuit 130 monitoring cell managing devices 100 inside; thereby cell managing device 100 quits work and lowers the temperature when excess Temperature; solved the overtemperature protection problem of cell managing device 100; circuit is realized simple, and cost is low.And; because the second operating voltage VREGH power supply that thermal protection circuit 130 is provided by the second voltage adjuster 210 of inside; voltage such as 10V; rather than directly powered by power supply VCC, therefore can reduce the requirement of withstand voltage of device in the thermal protection circuit 130, and improve its PSR (Power Supply Rejection; power supply suppresses); thereby in wide supply voltage scope, be 10V～60V such as the voltage range of VCC, stablize its protection temperature threshold.Equally because thermal protection circuit 130 neither be by the power supply of the first voltage adjuster 120, but so thermal protection circuit 130 independent operatings, fast response time, safe and reliable.
Although the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with the claim limited range.
Claims (30)
1. a cell managing device is used for managing some monocells, it is characterized in that, comprising:
Microcontroller is used for receiving the cell voltage of described some monocells and processing;
The first voltage adjuster links to each other with power supply and described microcontroller, is used to described microcontroller that the first operating voltage is provided; And
Thermal protection circuit; link to each other with described power supply and described the first voltage adjuster; be used for monitoring the temperature of described cell managing device inside, and control described the first voltage adjuster output or do not export described the first operating voltage according to the temperature of described cell managing device inside.
2. cell managing device as claimed in claim 1, it is characterized in that, when described thermal protection circuit is used for temperature when described cell managing device inside greater than the first threshold values, exports disable signal and control described the first voltage adjuster and do not export described the first operating voltage; And when being used for temperature when described cell managing device inside less than the second threshold values, described the first voltage adjuster of output enable signal controlling is exported described the first operating voltage.
3. cell managing device as claimed in claim 1 is characterized in that, described thermal protection circuit comprises:
The second voltage adjuster links to each other with described power supply, and being used for output the second operating voltage is described thermal protection circuit power supply; And
Hot detection module, link to each other with described second voltage adjuster, be used for receiving described the second operating voltage, and monitor the temperature of described cell managing device inside, and according to the temperature output temperature detection signal of described cell managing device inside to control described the first voltage adjuster output or not export described the first operating voltage.
4. cell managing device as claimed in claim 3; it is characterized in that; described thermal protection circuit also comprises drive circuit, links to each other with described second voltage adjuster and described hot detection module, is used for receiving described the second operating voltage and output drive signal to drive described hot detection module.
5. cell managing device as claimed in claim 4 is characterized in that, described drive circuit comprises:
Voltage follower links to each other with described second voltage adjuster, is used for following described the second operating voltage;
One-stage amplifier links to each other with described second voltage adjuster and described voltage follower, is used for the output voltage of described voltage follower is carried out the single-stage amplification; And
Phase inverter links to each other with described second voltage adjuster and described one-stage amplifier, is used for the voltage of described one-stage amplifier output is carried out paraphase to export described driving signal.
6. cell managing device as claimed in claim 4; it is characterized in that; described thermal protection circuit also comprises and door, and described first operating voltage exported or do not exported to the driving signal of described drive circuit output by described with described the first voltage adjuster of gate control with the temperature detection signal of described hot detection module output.
7. cell managing device as claimed in claim 3 is characterized in that, described second voltage adjuster comprises:
Bias-voltage generating circuit links to each other to produce bias voltage with described power supply; And
NMOS field effect transistor, its grid link to each other with described bias-voltage generating circuit and receive described bias voltage, and its drain electrode links to each other with described power supply, and its source electrode links to each other to export described the second operating voltage with described hot detection module.
8. cell managing device as claimed in claim 7, it is characterized in that, described bias-voltage generating circuit comprises resistance and voltage stabilizing didoe, the plus earth of described voltage stabilizing didoe, its negative electrode links to each other with described power supply by described resistance, and its anode links to each other with the grid of described NMOS field effect transistor.
9. cell managing device as claimed in claim 7 is characterized in that, described bias-voltage generating circuit comprises:
Current mirroring circuit links to each other with described power supply, for generation of image current;
The first load circuit links to each other to drive described current mirroring circuit with described current mirroring circuit and produces described image current;
The second load circuit links to each other with described current mirroring circuit, is used for receiving described image current to produce described bias voltage and to offer described NMOS field effect transistor.
10. cell managing device as claimed in claim 3 is characterized in that, hot detection module comprises:
Current generating circuit links to each other to receive described the second operating voltage with described second voltage adjuster, and produces drive current;
Temperature measuring circuit links to each other with described current generating circuit and described second voltage adjuster, receiving described drive current and described the second operating voltage, and is used for monitoring the temperature of described cell managing device inside with the output temperature measuring voltage; And
Comparator links to each other to receive described the second operating voltage with described second voltage adjuster, and links to each other to receive described temperature survey voltage with described temperature measuring circuit, and produces described temperature detection signal according to described temperature survey voltage.
11. cell managing device as claimed in claim 10, it is characterized in that, described current generating circuit comprises current mirroring circuit and load circuit, described current mirroring circuit links to each other to receive described the second operating voltage with described second voltage adjuster, and links to each other to produce described drive current with described load circuit.
12. cell managing device as claimed in claim 10, it is characterized in that, described temperature measuring circuit comprises the first resistance, the second resistance and NMOS field effect transistor, the drain electrode of described NMOS field effect transistor links to each other to receive described drive current by the first resistance with described current generating circuit, and links to each other to input described temperature survey voltage with the in-phase input end of described comparator; The source electrode of described NMOS field effect transistor is by described the second grounding through resistance; The grid of described NMOS field effect transistor links to each other with the output of described comparator.
13. cell managing device as claimed in claim 10, it is characterized in that, described hot detection module also comprises reference voltage generating circuit, described reference voltage generating circuit links to each other with described current generating circuit, second voltage adjuster and comparator, be used for receiving described drive current and described the second operating voltage with the generation reference voltage, thereby so that the more described reference voltage of described comparator and described temperature survey voltage produce described temperature detection signal.
14. cell managing device as claimed in claim 13, it is characterized in that, described reference voltage generating circuit comprises PNP triode and resistance, the base stage of described PNP triode and grounded collector, its emitter links to each other to receive described drive current by described resistance with described current generating circuit, and links to each other to export described reference voltage with the inverting input of described comparator.
15. cell managing device as claimed in claim 10 is characterized in that, described hot detection module also comprises start-up circuit, links to each other with described current generating circuit, offers described current generating circuit to produce described drive current for generation of starting current.
16. cell managing device as claimed in claim 10 is characterized in that, described hot detection module also comprises phase inverter, links to each other with described comparator, is used for the temperature detection signal of described comparator output is carried out paraphase.
17. cell managing device as claimed in claim 10 is characterized in that, described hot detection module also comprises delay circuit, links to each other with described comparator, is used for the temperature detection signal of described comparator output is postponed.
18. cell managing device as claimed in claim 10 is characterized in that, described comparator comprises:
Current mirroring circuit links to each other to receive described the second operating voltage with described second voltage adjuster, and produces image current;
Core circuit links to each other to receive described image current with described current mirroring circuit, and links to each other to receive described temperature survey voltage with described temperature measuring circuit, and according to the described temperature detection signal of described temperature survey Voltage-output; And
One-stage amplifier links to each other with described reference voltage circuit, is used for receiving described temperature detection signal and carries out the single-stage amplification.
19. cell managing device as claimed in claim 1, it is characterized in that, also comprise analog to digital converter, link to each other with described the first voltage adjuster and described microcontroller, be used for receiving described the first operating voltage, and the cell voltage of described some monocells carried out analog-to-digital conversion process to offer described microcontroller.
20. cell managing device as claimed in claim 19, it is characterized in that, also comprise band gap reference, link to each other with described the first voltage adjuster and described analog to digital converter, be used for receiving described the first operating voltage and provide reference voltage for described analog to digital converter.
21. cell managing device as claimed in claim 1 is characterized in that, also comprises multiplexer, links to each other with described some monocells and described microcontroller, is used for described some monocells are selected.
22. cell managing device as claimed in claim 1 is characterized in that, also comprises balance module, links to each other with described some monocells, is used for carrying out battery balanced to described some monocells.
23. cell managing device as claimed in claim 1 is characterized in that, also comprises clock oscillator, links to each other with described the first voltage adjuster and described microcontroller, is used for receiving described the first operating voltage and provides clock signal for described microcontroller.
24. a battery management system is characterized in that, comprising:
Some monocells are used for providing some cell voltages;
Connecting circuit links to each other to receive described some cell voltages with described some monocells, is used for current limliting and filtering; And
Such as the described cell managing device of claim 1-23 any one, described cell managing device links to each other with described some monocells by described connecting circuit, and carries out overtemperature protection by monitoring inner temperature.
25. system as claimed in claim 24, it is characterized in that, also comprise charging detecting circuit, link to each other with described cell managing device, whether described charging detecting circuit connects described some monocells for detection of charger is charged to export the charging detection signal, thereby so that described cell managing device control described the first voltage adjuster output or do not export described the first operating voltage according to the temperature of inside and described charging detection signal.
26. a battery management method that is applied to cell managing device is used for managing some monocells, described cell managing device comprises the first voltage adjuster, microcontroller and thermal protection circuit, it is characterized in that, described battery management method may further comprise the steps:
Provide the first operating voltage to power to described microcontroller by described the first voltage adjuster;
Monitor the temperature of described cell managing device inside by described thermal protection circuit;
Control described the first voltage adjuster output or do not export described the first operating voltage according to the temperature of described cell managing device inside.
27. battery management method as claimed in claim 26 is characterized in that, also comprises step:
Producing the second operating voltage by the second voltage adjuster is described thermal protection circuit power supply.
28. battery management method as claimed in claim 26 is characterized in that, also comprises step:
When the temperature of described cell managing device inside during greater than the first threshold values, control described the first voltage adjuster by described thermal protection circuit output disable signal and do not export described the first operating voltage.
29. battery management method as claimed in claim 26 is characterized in that, also comprises step:
When the temperature of described cell managing device during less than the second threshold values, export described the first operating voltage by described the first voltage adjuster of described thermal protection circuit output enable signal controlling.
30. battery management method as claimed in claim 26 is characterized in that, also comprises step:
Measure the temperature of described cell managing device inside and produce temperature survey voltage by temperature measuring circuit;
Produce reference voltage by reference voltage generating circuit;
Described temperature survey voltage is compared with described reference voltage;
Control described the first voltage adjuster output or do not export described the first operating voltage according to comparative result.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210066286 CN103311976A (en) | 2012-03-14 | 2012-03-14 | Battery management device, battery management method and battery management system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201210066286 CN103311976A (en) | 2012-03-14 | 2012-03-14 | Battery management device, battery management method and battery management system |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106160166A (en) * | 2016-08-24 | 2016-11-23 | 云顶科技（江苏）有限公司 | A kind of solar charging circuit |
| CN110442224A (en) * | 2019-09-17 | 2019-11-12 | 联想(北京)有限公司 | Power distribution method, electronic equipment and the readable storage medium storing program for executing of electronic equipment |
| CN112440817A (en) * | 2019-08-31 | 2021-03-05 | 比亚迪股份有限公司 | Battery management system and method and electric automobile |
| CN113364078A (en) * | 2021-05-14 | 2021-09-07 | 重庆工商大学 | Low-temperature environment robot charging control system |
| WO2023210295A1 (en) * | 2022-04-28 | 2023-11-02 | ヌヴォトンテクノロジージャパン株式会社 | Measuring system |
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2012
- 2012-03-14 CN CN 201210066286 patent/CN103311976A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106160166A (en) * | 2016-08-24 | 2016-11-23 | 云顶科技（江苏）有限公司 | A kind of solar charging circuit |
| CN106160166B (en) * | 2016-08-24 | 2018-10-12 | 云顶科技（江苏）有限公司 | A kind of solar charging circuit |
| CN112440817A (en) * | 2019-08-31 | 2021-03-05 | 比亚迪股份有限公司 | Battery management system and method and electric automobile |
| CN112440817B (en) * | 2019-08-31 | 2022-06-14 | 比亚迪股份有限公司 | Battery management system and method and electric automobile |
| CN110442224A (en) * | 2019-09-17 | 2019-11-12 | 联想(北京)有限公司 | Power distribution method, electronic equipment and the readable storage medium storing program for executing of electronic equipment |
| CN113364078A (en) * | 2021-05-14 | 2021-09-07 | 重庆工商大学 | Low-temperature environment robot charging control system |
| CN113364078B (en) * | 2021-05-14 | 2023-01-06 | 重庆工商大学 | Low-temperature environment robot charging control system |
| WO2023210295A1 (en) * | 2022-04-28 | 2023-11-02 | ヌヴォトンテクノロジージャパン株式会社 | Measuring system |
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Application publication date: 20130918 |