CN218262819U - Device for simultaneously drawing multiple crystals by using high-frequency coil - Google Patents
Device for simultaneously drawing multiple crystals by using high-frequency coil Download PDFInfo
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- CN218262819U CN218262819U CN202222561102.3U CN202222561102U CN218262819U CN 218262819 U CN218262819 U CN 218262819U CN 202222561102 U CN202222561102 U CN 202222561102U CN 218262819 U CN218262819 U CN 218262819U
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Abstract
The utility model provides an use device of high frequency coil simultaneously drawing many crystals, relates to the intraocular lens preparation field, the utility model discloses a top at the crucible sets up high frequency coil, carries out induction heating through high frequency coil to the raw materials in the crucible, after the raw materials part after the heating or whole melting be the liquation, begins the drawing of crystal, through the utility model discloses many crystal diameters of drawing are the same basically, and the effectual phenomenon of avoiding because of the inconsistent every crystal crystallization temperature that causes of silicon melt temperature in the crucible to avoid the different problem of crystallization rate of every seed crystal corresponding liquation department, guaranteed the continuous drawing of crystal promptly, reached the purpose etc. that improve the crystal quality again, be fit for popularization and application on a large scale.
Description
Technical Field
The utility model relates to an intraocular lens preparation field, concretely relates to use device of many crystals of high frequency coil simultaneous drawing.
Background
It is known that how to increase the pulling speed of the crystal is one of the key technologies in the aspect of improving the pulling efficiency of the crystal, taking the preparation of multi/single crystal silicon as an example, in the whole production process of the multi/single crystal silicon, the usage amount of cylindrical silicon rods with the diameter of 8mm to 12mm is very large, in the actual production process, excess materials occurring in the preparation process of the cylindrical silicon rods, silicon rods which are broken carelessly, crushed materials generated by multi/single crystal silicon production enterprises in the process stages of cutting, crushing and the like are very complicated to process, many enterprises directly discard or stack the crushed materials in a warehouse for saving trouble, and other enterprises recycle the crushed materials, draw the silicon rods into the silicon rods through a straight pulling furnace, and then cut the silicon rods into a plurality of cylindrical silicon rods with the size of 8mm to 8mm or 10mm to avoid trouble, so that the production cost of the cylindrical silicon rods is increased, impurity introduction is also increased in the cutting process, the production cost of the cylindrical silicon rods is also increased, and the crushed silicon materials are reused as a long-term technology in the field.
The utility model discloses a through the search discovery, the technique that adopts czochralski method to draw the silicon rod has very matured, and has obtained extensive application in the field of artificial crystal preparation, but current czochralski method can only draw a silicon rod in the center of crucible when drawing the silicon rod, for example chinese utility model patent, patent number is 201320678696.4, application date is 2013 10, 30 days, publication number is CN203639604U, the patent name is a flexible axle pulling type single crystal furnace; the patent of Chinese utility model is 202011063763.2, the application date is 30.9.2020, and the publication number is CN112176400A, and the patent name is a Czochralski single crystal furnace and a melt temperature gradient control method thereof. The technical schemes disclosed in the two patents are both the technical schemes for drawing the silicon rods by adopting the czochralski method, but the two technical schemes can only realize the simultaneous drawing of one silicon rod and cannot realize the simultaneous drawing of a plurality of silicon rods.
In order to realize the simultaneous drawing of a plurality of crystals, the Chinese patent with the patent application number of 201110305550.0 and the application date of 2011, 10 and 11 is found through retrieval, the patent name is a method for efficiently preparing a silicon core and a silicon core preparation furnace, and the specific working process of the Chinese patent comprises the steps of firstly placing polycrystalline silicon in a quartz crucible to be heated to be molten, and then cooling a silicon melting zone in the quartz crucible; then, a silicon seed crystal chuck holding a plurality of silicon seed crystals is driven to move downwards by controlling a guide steel wire rope, so that the silicon seed crystals are contacted with a silicon melting zone, the seed crystals are gradually pulled to become silicon cores by adjusting the temperature of the silicon melting zone and the upward lifting speed of the silicon seed crystals, and when the diameter of the silicon cores is close to the target diameter, the guide steel wire rope is controlled to be pulled to drive the seed crystals to lift, so that the silicon cores are separated from the silicon melting zone; then, the handle wheel is shaken to enable the silicon core storage position on the turntable to be aligned with the obtained silicon core, so that the silicon core is placed on the silicon core storage position, after the placement is finished, the handle wheel is continuously shaken to rotate the turntable to the silicon seed crystal chuck position, then the silicon seed crystal chuck on the turntable is extracted by utilizing the fixation of the silicon seed crystal chuck, and then the silicon seed crystal chuck on the silicon seed crystal chuck position is lowered to a silicon melting area through a gear transmission system to be welded; a new drawing run is then started, etc.
In the practical application process, the temperature of the upper surface of silicon melt in a crucible is not uniform (the central temperature is low, the temperature is higher towards the edge of the crucible, namely the temperature of the edge of the silicon melt crucible in the crucible is higher than that of the central part), so that the temperature of each silicon seed crystal corresponding to the melt is not uniform, the crystallization speed of each silicon seed crystal corresponding to the melt is different due to the non-uniform temperature, the diameter of a newly drawn silicon core is different after a silicon seed crystal chuck is lifted, and the phenomenon that the silicon core cannot be crystallized due to the overhigh temperature of the contact part of the seed crystal and the melt is seriously caused, namely the silicon core cannot be drawn or the diameter of the drawn silicon core is thinner or the drawing is interrupted in the drawing process, and the like.
In summary, it is an urgent need to provide a device for simultaneously drawing a plurality of crystals while avoiding the above-mentioned problems.
Disclosure of Invention
In order to overcome not enough among the background art, the utility model provides an use high frequency coil to draw device of many crystals simultaneously, the utility model discloses set up high frequency coil in the top of crucible, carry out induction heating through high frequency coil to the raw materials in the crucible, through the utility model discloses the many crystal diameters that draw out are basically equal.
In order to achieve the purpose, the utility model adopts the following technical scheme:
a device for simultaneously drawing a plurality of crystals by using a high-frequency coil comprises a furnace body, an upper lifting mechanism, the high-frequency coil and a crucible, wherein the crucible is arranged in the furnace body and can ascend and descend, the high-frequency coil is arranged above the crucible, a connecting pin of the high-frequency coil is connected with a coaxial cable, a plurality of drawing holes are formed in the high-frequency coil, the upper lifting mechanism is arranged above the high-frequency coil, and the lower end of a seed crystal on the upper lifting mechanism is respectively corresponding to the drawing holes in the high-frequency coil to form the device for simultaneously drawing a plurality of crystals by using the high-frequency coil.
The device for simultaneously drawing a plurality of crystals by using the high-frequency coil is characterized in that a plurality of drawing holes are formed in the high-frequency coil, the plurality of drawing holes are formed in the mode that one drawing hole is formed in the middle of the high-frequency coil, a plurality of groups of control holes are radially formed in the periphery of the middle drawing hole, each group of drawing holes comprises at least one drawing hole, an opening is formed in the high-frequency coil between the two groups of drawing holes, and the opening is communicated with the middle control holes from the outer edge surface of the high-frequency coil.
The device for simultaneously drawing a plurality of crystals by using the high-frequency coil is characterized in that a heater is arranged on the periphery of the crucible.
The device for simultaneously drawing a plurality of crystals by using the high-frequency coil is characterized in that the heater is connected with an electrode arranged at the lower part of the furnace body.
The device for simultaneously drawing a plurality of crystals by using the high-frequency coil is characterized in that a heater lifting mechanism is connected below the heater.
The device for simultaneously drawing a plurality of crystals by using the high-frequency coil is characterized in that a heat-insulating material layer is arranged between the crucible and the inner wall of the furnace body.
The device for simultaneously drawing a plurality of crystals by using the high-frequency coil is characterized in that the crucible is arranged on a crucible supporting seat, and the crucible supporting seat is connected with a lower shaft.
The device for simultaneously drawing a plurality of crystals by using the high-frequency coil is characterized in that the lower part of the lower shaft is connected with a lower shaft lifting mechanism.
Due to the adoption of the technical scheme, the utility model discloses following beneficial effect has:
the utility model discloses a top at the crucible sets up high frequency coil, carries out induction heating through high frequency coil to the raw materials in the crucible, and the raw materials part after the heating or whole melting be the liquation after, begin the drawing of crystal, through the utility model discloses many crystal diameters of drawing making are the same basically, the effectual phenomenon of avoiding because of the inconsistent every crystal crystallization temperature that the inhomogeneous causes of silicon melt temperature in the crucible to avoid the uneven problem of crystallization rate that every seed crystal corresponds liquation department, guaranteed the continuous drawing of crystal promptly, reached the purpose etc. that improves the crystal quality again, be fit for popularization and application on a large scale.
Drawings
Fig. 1 is a schematic structural diagram of the present invention;
FIG. 2 is a schematic view of a portion of the structure of FIG. 1 according to the present invention;
fig. 3 is a schematic structural view of the medium-high frequency coil of the present invention;
in the figure: 1. a furnace body; 2. an upper pulling mechanism; 3. a columnar crystal; 4. drawing holes; 5. a high-frequency coil; 6. melting liquid; 7. a crucible; 8. a heater; 9. and a lower shaft.
Detailed Description
The present invention will be explained in more detail by the following examples, and the object of the present invention is to protect all changes and improvements within the scope of the present invention, and the present invention is not limited to the following examples;
in the description of the present invention, it is to be understood that the terms "center", "lateral", "length", "width", "height", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "side", and the like indicate orientations or positional relationships based on those shown in fig. 1, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The device for simultaneously drawing a plurality of crystals by using the high-frequency coil comprises a furnace body 1, an upward-pulling mechanism 2, a high-frequency coil 5 and a crucible 7, wherein the furnace body 1 is a closed cavity, the crucible 7 which can be lifted up and down is arranged in the furnace body 1, a heat-insulating material layer is arranged between the crucible 7 and the inner wall of the furnace body 1, and the crucible 7 is positioned in a relatively stable temperature field (namely a thermal field with relatively stable temperature is formed) through the arrangement of the heat-insulating material layer; when the crucible 7 is set to be in a structure of ascending and descending up and down, the crucible 7 is set on a crucible supporting seat, the crucible supporting seat is connected with a lower shaft 9, the lower part of the lower shaft 9 is connected with a lower shaft lifting mechanism, and in the implementation, the lower shaft lifting mechanism is a structure which is conventional in the field, so the specific structure of the crucible is not described in detail, furthermore, a crystal raw material is arranged in the crucible 7, a high-frequency coil 5 for heating the crystal raw material is arranged above the crucible 7, and in the implementation, as shown in fig. 1 and 2, the diameter of the high-frequency coil 5 is smaller than the inner diameter of the crucible 7; the connection pin of the high-frequency coil 5 is connected with a coaxial cable, a plurality of drawing holes 4 are arranged on the high-frequency coil 5, an upper drawing mechanism 2 is arranged above the high-frequency coil 5, and the lower end heads of seed crystals on the upper drawing mechanism 2 respectively correspond to the drawing holes 4 on the high-frequency coil 5 to form the device for simultaneously drawing a plurality of crystals by using the high-frequency coil.
In specific implementation, as shown in fig. 3, a plurality of drawing holes 4 are formed in the high-frequency coil 5, the plurality of drawing holes 4 are formed in a manner that one drawing hole 4 is formed in the middle of the high-frequency coil 5, a plurality of groups of control holes 4 are radially formed in the periphery of the middle drawing hole 4, each group of drawing holes 4 includes at least one drawing hole 4, an opening is formed in the high-frequency coil 5 between two groups of drawing holes 4, and the opening penetrates from the outer edge surface of the high-frequency coil 5 to the middle control hole 4. In specific implementation, the specific structure of the high-frequency coil 5 may be referred to as a chinese patent with a patent number of 202010225971.1, and an application date of 26/3/2020, entitled a high-frequency coil for simultaneously drawing multiple silicon cores, or may be referred to as a related patent application for a high-frequency coil that is reported by liu dynasty xuan and luoyang jinnuo mechanical engineering ltd.
Further, in order to melt the crystal material in the crucible 7 into the melt 6 quickly, a heater 8 may be provided on the periphery of the crucible 7, the heater 8 is connected to an electrode provided at the lower portion of the furnace body 1, the crucible 7 is heated by the heater 8, the crystal material in the crucible 7 is melted into the melt entirely, and if the heater 8 is not used, the high-frequency coil 5 can only melt the crystal material in the crucible 7 locally, that is, the crystal material near the high-frequency coil 5 is melted into the melt 6.
Further, when the crystal is pulled, the distance between the high-frequency coil 5 and the liquid level of the melt 6 is always kept, the melt 6 is taken away by the seed crystal to form a new cylindrical crystal 3, the liquid level of the melt 6 in the crucible 7 is lowered along with the reduction of the melt 6, at this time, in order to ensure the distance between the high-frequency coil 5 and the liquid level of the melt 6, the distance between the high-frequency coil 5 and the liquid level of the melt 6 can be ensured by the rising of the crucible 7, or the distance between the high-frequency coil 5 and the liquid level of the melt 6 is ensured by the lowering of the high-frequency coil 5, when the distance between the high-frequency coil 5 and the liquid level of the melt 6 is ensured by selecting the lowering of the high-frequency coil 5, the high-frequency coil 5 can be connected with a lifting mechanism, and it should be noted that the lifting mechanism is a conventional technology in the field, the specific structure can be seen in a patent number 202220616149.2 which is applied by the inventor on 21/3/2022 and has a patent name of 2022206149.2 for an artificial crystal furnace, the device can also realize the up-and-down lifting of the high-frequency coil 5, and the description is not repeated here, in the specific implementation, the heater 8 can also be arranged into a structure for up-and-down lifting, when the liquid level of the molten liquid 6 in the crucible 7 descends, the high-frequency coil 5 descends, and the heater 8 also descends, so that the crystallization line of the crystal can be ensured to be unchanged, in the implementation, a heater lifting mechanism is arranged below the heater 8, and the heater lifting mechanism is a structural arrangement form which is conventional in the field (a structural scheme which relates to the lifting of the heater is arranged in the single crystal furnace), and the description is not repeated here.
The utility model discloses a concrete application embodiment as follows:
the utility model discloses a set up high frequency coil 5 in the top of crucible 7, heat the crystal raw materials in crucible 7 through high frequency coil 5, concrete method is as follows:
firstly, putting a crystal raw material into a crucible 7 in a crystal growth furnace;
secondly, turning on a power supply, wherein the high-frequency coil 5 independently heats the crystal raw material in the crucible 7, or the high-frequency coil 5 and the heater 8 are simultaneously started, and the crystal raw material in the crucible 7 is simultaneously heated by the high-frequency coil 5 and the heater 8 until the crystal raw material in the crucible 7 is melted and forms a molten liquid 6;
thirdly, the upper pulling mechanism 2 drives a group of seed crystals to descend, the seed crystals pass through the drawing hole 4 on the high-frequency coil 5 and then contact with the liquid level of the melt 6 in the crucible 7, when the lower end of the seed crystals are melted and are melted with the melt 6 into a whole, the upper pulling mechanism 2 is slowly lifted, the seed crystals are driven by the upper pulling mechanism 2 to slowly ascend, the melt ascends along with the seed crystals, and when the melt moves upwards along with the seed crystals and passes through the drawing hole 4 on the high-frequency coil 5, the melt gradually starts to crystallize along with the reduction of the temperature;
fourthly, through the steps, the melt liquid forms a group of new cylindrical crystals 3 along with the seed crystals, and the lifting mechanism 2 drives the seed crystals to slowly rise, so that finished cylindrical crystals 3 with required length can be formed;
fifthly, along with the reduction of the liquid level of the melt 6 in the crucible 7, the distance between the lower surface of the high-frequency coil 5 and the liquid level of the melt 6 is ensured in a mode of ascending the crucible 7 or descending the high-frequency coil 5;
and sixthly, repeating the steps to realize a crystal drawing process for multiple times.
The utility model discloses when the actual application, not only can be used for the drawing of silicon material, can also realize the drawing of other crystal materials simultaneously.
The details of the above-mentioned parts are not described in detail since they are prior art.
The embodiments selected for the purpose of disclosing the invention of the present invention are presently considered to be suitable, however, it will be understood that the invention is intended to cover all variations and modifications of the embodiments which fall within the scope of the inventive concept and invention.
Claims (8)
1. The utility model provides an use device of many crystals of high frequency coil simultaneously drawing, includes furnace body (1), goes up pulling mechanism (2), high frequency coil (5) and crucible (7), characterized by: the device is characterized in that a crucible (7) capable of ascending and descending up and down is arranged in the furnace body (1), a high-frequency coil (5) is arranged above the crucible (7), connecting pins of the high-frequency coil (5) are connected with a coaxial cable, a plurality of drawing holes (4) are formed in the high-frequency coil (5), an upper lifting mechanism (2) is arranged above the high-frequency coil (5), and the lower end of a seed crystal on the upper lifting mechanism (2) corresponds to the drawing holes (4) in the high-frequency coil (5) respectively to form the device for simultaneously drawing a plurality of crystals by using the high-frequency coil.
2. The apparatus for simultaneously pulling a plurality of crystals using a high-frequency coil as set forth in claim 1, wherein: the drawing holes (4) in the high-frequency coil (5) are arranged in a plurality of numbers, the plurality of drawing holes (4) are arranged in the mode that one drawing hole (4) is arranged in the middle of the high-frequency coil (5), a plurality of groups of control holes (4) are radially arranged on the periphery of the middle drawing hole (4), each group of drawing holes (4) comprises at least one drawing hole (4), an opening is formed in the high-frequency coil (5) between two groups of drawing holes (4), and the opening is communicated with the middle control hole (4) through the outer edge surface of the high-frequency coil (5).
3. The apparatus for simultaneously pulling a plurality of crystals using a high-frequency coil as set forth in claim 1, wherein: and a heater (8) is arranged on the periphery of the crucible (7).
4. The apparatus for simultaneously pulling a plurality of crystals using a high-frequency coil as set forth in claim 3, wherein: the heater (8) is connected with an electrode arranged at the lower part of the furnace body (1).
5. The apparatus for simultaneously drawing a plurality of crystals using a high frequency coil as set forth in claim 3, wherein: the lower surface of the heater (8) is connected with a heater lifting mechanism.
6. The apparatus for simultaneously drawing a plurality of crystals using a high frequency coil as set forth in claim 1, wherein: and a heat insulating material layer is arranged between the crucible (7) and the inner wall of the furnace body (1).
7. The apparatus for simultaneously pulling a plurality of crystals using a high-frequency coil as set forth in claim 1, wherein: the crucible (7) is arranged on a crucible supporting seat, and the crucible supporting seat is connected with a lower shaft (9).
8. The apparatus for simultaneously pulling a plurality of crystals using a high-frequency coil as set forth in claim 7, wherein: the lower part of the lower shaft (9) is connected with a lower shaft lifting mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222561102.3U CN218262819U (en) | 2022-09-27 | 2022-09-27 | Device for simultaneously drawing multiple crystals by using high-frequency coil |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222561102.3U CN218262819U (en) | 2022-09-27 | 2022-09-27 | Device for simultaneously drawing multiple crystals by using high-frequency coil |
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| Publication Number | Publication Date |
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| CN218262819U true CN218262819U (en) | 2023-01-10 |
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| CN202222561102.3U Active CN218262819U (en) | 2022-09-27 | 2022-09-27 | Device for simultaneously drawing multiple crystals by using high-frequency coil |
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Effective date of registration: 20230607 Address after: Room 1017, Huizhi Building, Yanguang Road, Chuangye Road Street, High-tech Zone, Luoyang, Henan Province, 471000 Patentee after: Luoyang Changying New Energy Technology Co.,Ltd. Address before: 471000 9-1404, prosperous city, Heluo Road, high tech Development Zone, Luoyang City, Henan Province Patentee before: Guo Liliang Patentee before: Zhu Zhenye |