CN115404538A - Device capable of realizing continuous growth of crystal - Google Patents
Device capable of realizing continuous growth of crystal Download PDFInfo
- Publication number
- CN115404538A CN115404538A CN202210854214.XA CN202210854214A CN115404538A CN 115404538 A CN115404538 A CN 115404538A CN 202210854214 A CN202210854214 A CN 202210854214A CN 115404538 A CN115404538 A CN 115404538A
- Authority
- CN
- China
- Prior art keywords
- crucible
- lifting
- heating element
- translation
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a device capable of realizing continuous crystal growth, which comprises a furnace body, a crucible translation mechanism, a crucible lifting and rotating mechanism, a crystal lifting and rotating mechanism and a crucible; the furnace body is arranged at the top of the support, a preheating zone heating element, a first gate baffle mechanism, a growth zone heating element, a second gate baffle mechanism and a rear heat preservation zone heating element are sequentially arranged in the furnace body from bottom to top, the crystal lifting and rotating mechanism is arranged at the top of the furnace body, the crucible translation mechanism is arranged on a cross beam at the bottom of the support, at least two sets of crucible lifting and rotating mechanisms are arranged on a moving connecting plate of the crucible translation mechanism, and the crucible is arranged on a crucible support of the crucible lifting and rotating mechanism. The invention can alternately provide the melt required by crystal growth through the two sets of crucible lifting and rotating mechanisms under the condition of not changing the temperature field structure and the size of the crucible, thereby realizing the continuous growth of the crystal, obtaining the large-size crystal and simultaneously reducing the influence on the crystal quality caused by the change of the components of the melt.
Description
Technical Field
The invention relates to a crystal material, in particular to a device capable of realizing continuous crystal growth, and belongs to the technical field of crystal growth.
Background
The crystal material grows by a plurality of methods, and the Czochralski method is one of the common methods: the raw material in the crucible is melted after being heated to a certain temperature by induction heating or resistance heating, when the seed crystal connected with the lower end of the seed crystal rod descends to a solid-liquid interface, the seed crystal can form a supercooling gradient due to the contact with the melt, the melt near the solid-liquid interface crystallizes along the seed crystal, and crystals with a certain size gradually grow along with the upward pulling of the seed crystal rod. During this process, the melt gradually decreases due to crystallization until the melt cannot continue to grow crystals. The final size of the crystal depends on the amount of feedstock in the crucible, which ultimately depends on the size of the crucible.
Another crystal growth method, liquid phase epitaxy: the epitaxial material is heated and dissolved in the solution and reaches saturation, the substrate connected with the lower end of the seed rod is lowered to be soaked in the melt, and under the gradient action of a temperature field, solid-phase substances can be separated out from the solution and deposited on the substrate, so that a single crystal film layer with the required thickness can be grown. In the epitaxial process, the epitaxial material is gradually reduced, and the composition ratio is gradually reduced until the crystallization cannot be performed. Thus, the thickness of the grown thin film layer depends on the amount of epitaxial material, which is still dependent on the size of the crucible.
In the field of crystal growth, a crucible is usually made of rare and precious metals such as iridium gold and platinum gold, and the manufacturing and using cost of a large crucible is high; and the temperature field is increased when the crucible is enlarged, which may cause the temperature field gradient which is already stable in cost to become unstable and even not suitable for crystal growth. Therefore, how to improve the use efficiency of the crucible and reduce the growth cost, and the growth of large-size crystals by using a small crucible becomes an important direction for the research of the professional technical personnel.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a device capable of realizing continuous growth of crystals, which can break through the limit of a single crucible for containing raw materials and realize continuous growth of the crystals, thereby obtaining the crystal size exceeding the raw materials contained in the crucible and simultaneously reducing the influence caused by the change of melt components.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a device capable of realizing continuous crystal growth comprises a furnace body and a crucible, wherein the top of the furnace body is sealed by a cover plate, a crystal lifting and rotating mechanism is arranged on the cover plate, and a seed rod of the crystal lifting and rotating mechanism enters and exits the furnace body through a communication port in the center of the cover plate; the method is characterized in that: the furnace body is arranged at the top of the support and supported by the support, the bottom of the support is provided with a beam, the beam is provided with a crucible translation mechanism, the crucible translation mechanism is provided with at least two sets of crucible lifting and rotating mechanisms, the number of crucibles corresponds to the number of the crucible lifting and rotating mechanisms one by one and is arranged at the upper end of each set of crucible lifting and rotating mechanism, and the crucibles can translate left and right, lift up and down and rotate under the driving of the crucible translation mechanism and the corresponding crucible lifting and rotating mechanisms; a preheating zone heating element, a first gate baffle mechanism, a growth zone heating element, a second gate baffle mechanism and a rear heat preservation zone heating element are sequentially arranged in the furnace body from bottom to top, the centers of the preheating zone heating element, the growth zone heating element and the rear heat preservation zone heating element are cavities, and the cavities are used for a crucible and/or a seed rod to stay or pass up and down; a crucible inlet and outlet channel is arranged in the center of the furnace body bottom plate, and the center of the crucible inlet and outlet channel, the centers of the heating body cavities, the centers of the cover plate communication openings and the seed rod are positioned on the same vertical line; the first gate baffle mechanism is horizontally arranged and separates the heating element in the preheating area from the heating element in the growing area, and the second gate baffle mechanism is horizontally arranged and separates the heating element in the growing area from the heating element in the rear heat preservation area; when the first gate baffle mechanism and the second gate baffle mechanism are closed, the center of the first gate baffle mechanism and the second gate baffle mechanism forms a closed hole which is only matched with the crucible and/or the seed rod and is used for the upward and downward passing of the closed hole.
Preferably, the first gate baffle mechanism and the second gate baffle mechanism both comprise a support flat plate, gate baffles, connecting rods and a driving part, the support flat plate of the first gate baffle mechanism is placed on the upper surface of the heating body in the preheating region, the support flat plate of the second gate baffle mechanism is placed on the upper surface of the heating body in the growth region, a vertical through hole is formed in the center of the support flat plate, horizontal sliding grooves are respectively formed in the upper surface of the support flat plate at two sides of the through hole, the two gate baffles are respectively positioned in the sliding grooves at two sides, opposite ends of the two gate baffles are provided with notches, the back end of each gate baffle is respectively connected with the driving part through the connecting rods, and the driving part is installed on the wall of the furnace body; under the drive of the driving part, the two gate baffles can move towards or away from each other through the sliding chute, and the two notches can be closed to form the closed hole matched with the crucible and/or the seed rod for the upward and downward passing of the closed hole.
The notch is a semicircular notch, and the two notches are folded to form a round hole.
The furnace body is of a sandwich structure formed by an inner wall and an outer wall, circulating cooling water is arranged in the sandwich structure, and a cooling water inlet and a cooling water outlet are arranged on the outer wall.
The crucible translation mechanism comprises a horizontal mounting substrate, a translation sliding block, a movable connecting plate, a translation lead screw and a translation lead screw driving motor, wherein the mounting substrate is fixed on a cross beam at the bottom of the bracket; a horizontal threaded hole is formed in the translation sliding block, a translation screw rod is in threaded connection with the translation sliding block through the threaded hole, and two ends of the translation screw rod are mounted on the mounting substrate through a bearing and a bearing seat; one end of the translation screw rod penetrates through the bearing seat to be connected with a translation screw rod driving motor, and the crucible lifting rotating mechanism is arranged on the movable connecting plate; under the drive of a translation lead screw drive motor, a translation sliding block can reciprocate along a sliding rail on the mounting substrate, and further drives a movable connecting plate and a crucible lifting and rotating mechanism on the movable connecting plate to reciprocate in the horizontal direction.
The crucible lifting and rotating mechanism comprises a vertical supporting vertical plate, a lifting slide block, a lifting screw rod driving motor, a crucible rotating motor supporting plate, a crucible rotating motor, a crucible supporting rod and a crucible holder, wherein the lifting slide block is arranged on the vertical surface of the supporting vertical plate through a slide rail; a vertical threaded hole is formed in the lifting slide block, the lifting screw rod is in threaded connection with the lifting slide block through the threaded hole, and two ends of the lifting screw rod are mounted at the upper end and the lower end of the supporting vertical plate through a bearing and a bearing seat; the lower end of the supporting vertical plate is fixedly connected with a movable connecting plate of the crucible translation mechanism; the upper end of the lifting screw rod penetrates through the bearing block to be connected with a lifting screw rod driving motor; a crucible rotating motor supporting plate is fixed on the lifting slide block, a crucible rotating motor is arranged on the crucible rotating motor supporting plate, the lower end of the crucible supporting rod is connected with an output shaft of the crucible rotating motor, a crucible support is arranged at the upper end of the crucible supporting rod, and a crucible is positioned on the upper surface of the crucible support; under the drive of a lifting lead screw drive motor, a lifting slide block can reciprocate along a slide rail on a supporting vertical plate, so as to drive a crucible rotating motor supporting plate, a crucible rotating motor, a crucible supporting rod, a crucible support and a crucible on the crucible rotating motor supporting plate to move up and down; the crucible rotating motor can drive the crucible to rotate horizontally through the crucible supporting rod and the crucible support.
The crucible holds in the palm the upper surface and has the pit that agrees with crucible bottom shape, and the crucible is placed in the pit and is spacing through the pit.
The support is of a rectangular frame structure formed by welding square steel or splicing aluminum profiles, four corners of the bottom of the support are respectively provided with height-adjustable ground feet, and the top of the support is provided with a threaded connector for mounting a furnace body.
The preheating zone heating element, the growth zone heating element and the rear heat preservation zone heating element are composed of hollow columnar matrixes and heating elements arranged on the hollow inner surfaces of the matrixes; the hollow region of the substrate constitutes the cavity.
The base body is made of low-heat-conduction material; the heating element is a resistance wire.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention adopts at least two sets of crucibles and crucible lifting and rotating mechanisms to alternately provide melt raw materials required by crystal growth, realizes the continuous growth of crystals, grows large-size (longer in length or thicker in thickness) crystals which can be realized only by large crucibles and large temperature fields in the prior art by using small crucibles and small temperature fields, improves the utilization rate of the crucibles and the temperature fields, and reduces the growth cost of the crystals.
2. According to the invention, the upper and lower layers of gate baffle mechanisms are arranged, and heating areas are mutually isolated, so that the temperature field structure and the crucible size are not changed, and the temperature field gradient is maintained to be stable and unchanged.
3. The invention can ensure that the melt component changes less by alternately melting the material to grow, and reduce the influence of the change of the raw material proportion on the crystal quality.
Drawings
FIG. 1 is a schematic structural diagram of an apparatus for continuous crystal growth according to the present invention;
FIG. 2 is a schematic structural view of a crystal pulling and rotating mechanism according to the present invention;
FIG. 3 is a schematic structural view of a crucible translation mechanism according to the present invention;
FIG. 4 is a schematic structural view of a crucible lifting and rotating mechanism according to the present invention;
FIG. 5 is a schematic view of the structure of a shutter mechanism according to the present invention;
FIG. 6 is a schematic view of the alternate feeding of the continuous crystal growth apparatus of the present invention in use.
In the figure: 1. a furnace body; 2. a support; 3. a crystal pulling rotation mechanism; 4. a crucible translation mechanism; 5. a first crucible lifting and rotating mechanism; 6. a second crucible lifting and rotating mechanism; 7. a first crucible; 8. a second crucible; 9. a first gate baffle mechanism; 10. a second gate baffle mechanism; 11. a preheating zone heating element; 12. a growth region heating element; 13. a rear heat preservation zone heating element;
31. a crystal pulling mechanism body; 32. a crystal rotating motor support plate; 33. a crystal rotating electrical machine; 34. a seed rod;
41. a mounting substrate; 42. moving the connecting plate; 43. a translation slide block; 44. translating the lead screw;
51. supporting a vertical plate; 52. a crucible rotating motor support plate; 53. a crucible rotating motor; 54. a crucible supporting rod; 55. a crucible support; 56. a lifting slide block; 57. lifting a screw rod; 58. a lifting screw driving motor;
91. supporting the flat plate; 92. a gate baffle; 93. a connecting rod; 94. a drive member; 95. a via hole; 96. and (4) a notch.
Detailed Description
As shown in figure 1, the device capable of realizing continuous crystal growth comprises a furnace body 1 and a crucible 7 (8), wherein the top of the furnace body 1 is sealed by a cover plate, a crystal lifting and rotating mechanism 3 is arranged on the cover plate, and a seed rod 34 of the crystal lifting and rotating mechanism 3 enters and exits the furnace body 1 through a communication port in the center of the cover plate. Furnace body 1 installs and is supported by support 2 at support 2 top, is equipped with the crossbeam in support 2 bottom, installs crucible translation mechanism 4 on the crossbeam, is equipped with two set at least crucible lifting and drop rotating mechanism 5 (6) on crucible translation mechanism 4, the quantity of crucible and crucible lifting and drop rotating mechanism one-to-one and install in every set of crucible lifting and drop rotating mechanism's upper end, the crucible can be controlled translation, oscilaltion and rotation under the drive of crucible translation mechanism 4 and the crucible lifting and drop rotating mechanism 5 (6) that corresponds. A preheating zone heating element 11, a first gate baffle mechanism 9, a growth zone heating element 12, a second gate baffle mechanism 10 and a rear heat preservation zone heating element 13 are sequentially arranged in a furnace body 1 from bottom to top, the centers of the preheating zone heating element 11, the growth zone heating element 12 and the rear heat preservation zone heating element 13 are cavities, and the cavities are used for a crucible and/or a seed rod to stay or pass up and down; a crucible inlet and outlet channel is arranged in the center of the bottom plate of the furnace body 1, and the center of the crucible inlet and outlet channel, the centers of the heating body cavities, the centers of the cover plate communication openings and the seed rods are positioned on the same vertical line; the first gate baffle mechanism 9 is horizontally arranged and separates a preheating zone heating element 11 from a growth zone heating element 12, and the second gate baffle mechanism 10 is horizontally arranged and separates the growth zone heating element 12 from a rear heat preservation zone heating element 13; when the first gate baffle mechanism 9 and the second gate baffle mechanism 10 are closed, the center forms a closed hole which is matched with the crucible and/or the seed rod only and is used for the upper and lower passing.
The invention adopts at least two sets of crucibles and crucible lifting and rotating mechanisms to alternately provide melt raw materials required by crystal growth, when the raw materials of one set of crucibles are consumed in the growth process almost, the crucibles are withdrawn, the raw materials (which are melted in advance) in the other set of crucibles can be immediately supplemented to grow, the crucible raw materials withdrawn before are supplemented, the crucibles enter a preheating zone to preheat the melt, the supplementation preparation is well carried out, the continuous growth of the crystals is realized by repeatedly and alternately feeding and growing, large-size (longer length or thicker thickness) crystals which can be realized only by large crucibles and large temperature fields in the prior art can be grown by using small crucibles and small temperature fields, the utilization rates of the crucibles and the temperature fields are improved, and the growth cost of the crystals is reduced.
The invention can ensure that the melt component changes less by alternately melting the material to grow, and reduce the influence of the change of the raw material proportion on the crystal quality.
According to the invention, the upper and lower layers of gate baffle mechanisms are arranged, and heating areas are mutually isolated, so that the temperature field structure and the crucible size are not changed, and the temperature field gradient is maintained to be stable and unchanged.
The figure shows two sets of crucible lifting and rotating mechanisms, namely a first crucible lifting and rotating mechanism 5 and a second crucible lifting and rotating mechanism 6, and the corresponding crucibles are a first crucible 7 and a second crucible 8. The working principle of three or more crucible lifting and rotating mechanisms is similar, and the three or more crucible lifting and rotating mechanisms alternately feed materials, melt materials and grow to ensure that the seed crystal rod grows continuously as much as possible.
Referring to fig. 3, the crucible translation mechanism includes a horizontal mounting substrate 41, a translation slider 43, a moving connecting plate 42, a translation screw 44 and a translation screw driving motor (the translation screw driving motor is not shown in the figure), the mounting substrate 41 is fixed on a cross beam at the bottom of the bracket, the translation slider 43 is mounted on the upper surface of the mounting substrate 41 through a slide rail, and the moving connecting plate 42 is fixed on the translation slider 43. A horizontal threaded hole is formed in the translation sliding block 43, the translation screw rod 44 is in threaded connection with the translation sliding block 43 through the threaded hole, and two ends of the translation screw rod 44 are mounted on the mounting substrate 41 through a bearing and a bearing seat. One end of the translation screw rod penetrates through the bearing seat to be connected with a translation screw rod driving motor, and the crucible lifting and rotating mechanism 5 (6) is installed on the movable connecting plate 42; under the driving of a translation lead screw driving motor, a translation sliding block 43 (equivalent to a lead screw nut) can reciprocate along a sliding rail on the mounting substrate 41, and further drives the moving connecting plate 42 and the crucible lifting and rotating mechanism 5 (6) on the moving connecting plate to reciprocate in the horizontal direction.
Preferably, the furnace body 1 is made of stainless steel materials and can be designed into a sandwich structure formed by an inner wall and an outer wall, circulating cooling water is arranged in the sandwich structure, a cooling water inlet and a cooling water outlet are arranged on the outer wall, and the cooling water flows back and forth in the sandwich layer through a pressure pump. Or a coil pipe water cooling structure can be directly arranged on the periphery of the furnace body without adopting an interlayer structure. The water cooling structure aims to maintain the temperature of the furnace body within a proper range, and is beneficial to forming a temperature field structure required by crystal growth in the furnace body.
Preferably, the support 2 is a rectangular frame structure welded by square steel or spliced by aluminum profiles, four corners of the bottom of the support are respectively provided with height-adjustable feet, and the top of the support is provided with a threaded connector for mounting a furnace body.
Meanwhile, referring to fig. 4, the crucible lifting and rotating mechanism includes a vertical supporting vertical plate 51, a lifting slider 56, a lifting screw 57, a lifting screw driving motor 58, a crucible rotating motor supporting plate 52, a crucible rotating motor 53, a crucible supporting rod 54 and a crucible holder 55, wherein the lifting slider 56 is mounted on the vertical surface of the supporting vertical plate 51 through a slide rail; a vertical threaded hole is formed in the lifting slide block, a lifting screw rod 57 is in threaded connection with the lifting slide block 56 through the threaded hole, and two ends of the lifting screw rod 57 are mounted at the upper end and the lower end of the supporting vertical plate 51 through bearings and bearing seats; the lower end of the supporting vertical plate is fixedly connected with a movable connecting plate of the crucible translation mechanism; the upper end of the lifting screw rod 57 penetrates through the bearing block to be connected with a lifting screw rod driving motor 58; the crucible rotating motor supporting plate 52 is fixed on the lifting slide block 56, the crucible rotating motor 53 is installed on the crucible rotating motor supporting plate 52, the lower end of the crucible supporting rod 54 is connected with the output shaft of the crucible rotating motor 53, the crucible support 55 is installed at the upper end of the crucible supporting rod 54, and the crucible is located on the upper surface of the crucible support; under the drive of a lifting screw rod drive motor 58, the lifting slide block 56 can reciprocate along a slide rail on the supporting vertical plate 51, so as to drive the crucible rotating motor supporting plate 52 and a crucible rotating motor 53, a crucible supporting rod 55, a crucible holder 55 and a crucible on the crucible rotating motor supporting plate to move up and down; the crucible rotating motor 53 can drive the crucible to horizontally rotate through the crucible supporting rod 55 and the crucible holder 55. The first crucible lifting and rotating mechanism 5 and the second crucible lifting and rotating mechanism 6 are installed on the movable connecting plate 42 of the crucible translation mechanism 4, the first crucible 7 is placed on the crucible support 55 of the first crucible lifting and rotating mechanism 5, and the second crucible 8 is placed on the crucible support of the second crucible lifting and rotating mechanism 6. The crucible lifting mechanism can realize the reciprocating motion of the crucible in the vertical direction, and the crucible rotating motor can realize the uniform stirring of the melt in the pot.
Further, the crucible support rod 54 is made of alumina ceramics or other high temperature resistant materials, has a solid or hollow structure, has certain strength, and can rotate at a high speed.
Further, the upper surface of the crucible support 55 is provided with a pit matched with the shape of the bottom of the crucible, and the crucible is placed in the pit and limited by the pit. The lower end of the crucible support 55 is matched with the upper end of the supporting rod 54, the crucible support 55 is made of alumina ceramics or other high-temperature resistant materials, and is of a solid or hollow structure, has certain strength and can rotate at a high speed.
Preferably, the first crucible 7 and the second crucible 8 are hollow thin-wall U-shaped structures, are made of iridium or platinum and other high-temperature-resistant rare and noble metal materials, and are used for melt containers.
Preferably, the crystal pulling and rotating mechanism 3 is installed on the upper surface of the furnace body 1, the seed rod 34 is concentric with the central communicating opening of the upper cover plate of the furnace body 1, the seed rod 34 can realize reciprocating motion in the vertical direction through the crystal pulling mechanism 31, and the crystal rotating motor 33 can realize rotating motion. The crystal rotating motor 33 is installed on the crystal rotating motor support plate 32 downward, and the crystal rotating motor support plate 32 is fixed on a lifting block which can be lifted through a screw rod. FIG. 2 is a schematic view of a crystal pulling rotation mechanism. The crystal pulling and rotating mechanism and the crucible lifting and rotating mechanism are similar in component composition and working principle, lifting is achieved through a screw rod, and the rotating function is achieved through a rotating motor.
Further, the seed rod 34 is made of alumina ceramics or other high temperature resistant materials, has a solid or hollow structure, has certain strength, can rotate at a high speed, and is used for hanging seed crystals or grown crystals.
Meanwhile, referring to fig. 5, the first gate baffle mechanism 9 includes a support plate 91, gate baffles 92, a connecting rod 93 and a driving component 94, the support plate 91 of the first gate baffle mechanism 9 is placed on the upper surface of the preheating zone heating element 11, a vertical through hole 95 is arranged in the center of the support plate 91, horizontal sliding grooves are respectively arranged on the upper surface of the support plate 91 at two sides of the through hole, the gate baffles 92 are left and right and are respectively arranged in the sliding grooves at two sides, notches 96 are arranged at opposite ends of the two gate baffles 92, the backward end of each gate baffle 92 is respectively connected with the driving component 94 through the connecting rod 93, and the driving component is installed on the wall of the furnace body; under the drive of the driving part 94, the two gate baffles 92 can move towards each other or away from each other through the sliding chute, and when the two gaps move towards each other, the two gaps can be closed to form the closed hole matched with the crucible and/or the seed rod for the upper and lower passing of the closed hole.
The second gate baffle mechanism 10 and the first gate baffle mechanism 9 have the same structure, and are not described in detail herein. The support flat plate of the second gate baffle mechanism is placed on the upper surface of the heating body in the growth area.
Preferably, the first gate baffle mechanism 9 is arranged between the preheating zone heating element 11 and the growth zone heating element 12, the gate baffle 92 is opened when the crucible enters and exits the growth zone heating element 12, and the gate baffle 92 is closed when the crystal grows, so as to ensure the stability of the temperature field gradient.
Preferably, the second gate baffle mechanism 10 is arranged between the growth area heating element 12 and the rear heat preservation area heating element 13, the gate baffle is opened in the process that the seed crystal enters or the crystal is pulled out of the growth area heating element 12, and the gate baffle is closed in the process of crystal growth so as to ensure the stability of the temperature field gradient.
Furthermore, the supporting flat plate 91 adopts a concave design formed by sliding grooves, the material is alumina ceramics or other high-temperature-resistant materials, and the size of the sliding grooves is matched with that of the gate baffle plate, so that the gate baffle plate can slide smoothly in the sliding grooves.
Furthermore, the size of the gate baffle 92 is consistent with that of the chute of the supporting flat plate, one side of the gate baffle is connected with the connecting rod 93, the center of the other side of the gate baffle is provided with a semicircular notch 96, the two notches are folded to form a circular hole, and the radius of the circular hole is slightly larger than that of the seed rod or the crucible supporting rod.
Further, the driving member 94 may be an air cylinder, or an electric push rod, or other members capable of sliding the shutter plate left and right.
Specifically, the preheating zone heating element 11, the growth zone heating element 12 and the rear heat preservation zone heating element 13 are all composed of a hollow columnar substrate and heating elements arranged on the hollow inner surface of the substrate; the hollow region of the substrate constitutes the cavity. The base body is made of low-heat-conduction material; the heating element is a resistance wire.
The preheating zone heating element 11 is arranged on the upper surface of the bottom plate of the furnace body 1, the substrate material is zirconia, glass fiber and other materials with low heat conductivity, the shape is usually hollow column shape, and other customized shapes can also be adopted; heating elements such as resistance wires are embedded in the inner wall of the base body; the heating element is heated to a temperature slightly higher than the melting point of the raw materials in the pot, so that the raw materials can be melted and preparation is made for the continuous growth of crystals.
The growth area heating body 12 is arranged on the upper surface of the first gate baffle mechanism 9, the base material is zirconia, glass fiber and other materials with low heat conductivity, the shape is usually hollow column shape, and can also be other customized shapes, and the size is designed according to the temperature field gradient requirement; heating elements such as resistance wires are embedded in the inner wall of the matrix; the heating body is heated to the set temperature, and forms a stable temperature gradient suitable for the crystal growth together with the heating body 13 in the rear heat preservation area.
The heating body 13 of the rear heat preservation area is arranged on the upper surface of the second gate baffle mechanism 10, the substrate material is zirconium oxide, glass fiber and other materials with low heat conductivity, the shape is usually hollow column shape, and can also be other customized shapes, the size is designed according to the temperature field gradient requirement; heating elements such as resistance wires are embedded in the inner wall of the base body; the heating element is heated to a set temperature, and forms a stable temperature gradient suitable for the crystal growth together with the heating element 12 in the growth area.
In one embodiment, taking czochralski growth as an example, the following steps are performed, with reference to fig. 6:
1. the first crucible 7 and the second crucible 8 are lowered to the lowest positions and filled with the raw material (upper left in FIG. 6), and then both crucibles are raised to the middle position inside the heating body 11 of the preheating zone (upper right in FIG. 6);
2. raising the seed crystal rod 34 to the highest position, installing the seed crystal, and then lowering the seed crystal to the middle position of 13 parts in the heating body of the rear heat preservation area;
3. closing the first gate shutter mechanism 9 and the second gate shutter mechanism 10;
4. heating and raising the temperature, wherein the heating element 11 in the preheating zone, the heating element 12 in the growth zone and the heating element 13 in the rear heat preservation zone are respectively raised to a preset temperature value, so that the raw materials in the crucible are completely melted in the preheating zone, and a stable temperature gradient suitable for crystal growth is formed in the growth zone and the rear heat preservation zone; in the temperature rise process, the crucible is in a rotating state, and the seed rod is in a rotating state;
5. the first crucible 7 is moved to the central position by the crucible translation mechanism 4, then the first gate baffle mechanism 9 is opened, the first crucible 7 is lifted to the set position of the growth area by the first crucible lifting and rotating mechanism 5, and the first gate baffle mechanism 9 is closed (as shown in the left part of the figure 6);
6. opening the second gate baffle mechanism 10, lowering the seed crystal to the solid-liquid interface of the melt, closing the second gate baffle mechanism 10, seeding and starting to grow (as shown in the left part of the figure 6);
7. when the melt in the first crucible 7 is insufficient to continue to maintain the crystal growth or when a large change occurs in the composition in the melt, the crystal growth is suspended, the first shutter mechanism 9 is opened, the first crucible 7 is lowered to the lowermost position (right in fig. 6), and the first shutter mechanism 9 is closed;
8. the second crucible 8 is moved to the central position (as shown in the lower left part of the figure 6) through the crucible translation mechanism 4, then the first gate baffle mechanism 9 is opened, the second crucible 8 is lifted to the set position of the growth area through the second crucible lifting and rotating mechanism 6, the first gate baffle mechanism 9 is closed (as shown in the lower right part of the figure 6), and the crystal continues to grow;
9. supplementing raw materials into the first crucible 7, then lifting the first crucible 7 to the middle position inside the heating body 11 of the preheating zone (as shown in the lower right part of figure 6) through the first crucible lifting and rotating mechanism 5, melting the raw materials in the pot, and driving the crucible to rotate through the crucible rotating motor to uniformly stir the melt in the pot;
10. when the melt in the second crucible 8 is not enough to continue to maintain the crystal growth or the components in the melt have large changes, the crystal growth is suspended, the first gate baffle mechanism 9 is opened, the second crucible 8 is lowered to the lowest position, and the first gate baffle mechanism 9 is closed;
11. the first crucible 7 is moved to the central position through the crucible translation mechanism 4, then the first gate baffle mechanism 9 is opened, the first crucible 7 is lifted to the set position of the growth area through the first crucible lifting and rotating mechanism 5, the first gate baffle mechanism 9 is closed, and the crystal continues to grow;
12. supplementing raw materials into the second crucible 8, then lifting the second crucible 8 to the middle position inside the heating body 11 of the preheating zone (as shown in figure 6) through the second crucible lifting and rotating mechanism 6, melting the raw materials in the pot, and driving the crucible to rotate through the crucible rotating motor to uniformly stir the melt in the pot;
13. repeating the steps 7-12 as required until a target crystal grows; finishing the growth;
14. pulling the crystal out of the crucible, and setting a cooling program according to the process requirement;
15. opening the first gate baffle mechanism 9, and lowering the first crucible 7 and the second crucible 8 to the lowest position; the second shutter mechanism 10 is opened, the seed rod 34 is raised to the highest position, and the crystal is taken down.
The invention adopts at least two sets of crucibles and crucible lifting and rotating mechanisms to alternately provide melt raw materials required by crystal growth, realizes the continuous growth of crystals, increases the crystal size, and simultaneously reduces the influence of the change of the proportion of melt components on the growth and quality of the crystals. The invention realizes the continuous growth of the crystal through the small crucible, reduces the use cost of the crucible, increases the crystal size, improves the crystal growth efficiency and has good economic benefit.
The above examples of the present invention are merely illustrative of the present invention and are not intended to limit the embodiments of the present invention. Variations and modifications in other variations will occur to those skilled in the art upon reading the foregoing description. Not all embodiments are exhaustive. Obvious changes and modifications of the present invention are also within the scope of the present invention.
Claims (10)
1. A device capable of realizing continuous growth of crystals comprises a furnace body and a crucible, wherein the top of the furnace body is sealed by a cover plate, a crystal lifting and rotating mechanism is arranged on the cover plate, and a seed rod of the crystal lifting and rotating mechanism enters and exits the furnace body through a communication port in the center of the cover plate; the method is characterized in that: the furnace body is arranged at the top of the support and supported by the support, the bottom of the support is provided with a beam, the beam is provided with a crucible translation mechanism, the crucible translation mechanism is provided with at least two sets of crucible lifting and rotating mechanisms, the number of crucibles corresponds to the number of the crucible lifting and rotating mechanisms one by one and is arranged at the upper end of each set of crucible lifting and rotating mechanism, and the crucibles can translate left and right, lift up and down and rotate under the driving of the crucible translation mechanism and the corresponding crucible lifting and rotating mechanisms; a preheating zone heating element, a first gate baffle mechanism, a growth zone heating element, a second gate baffle mechanism and a rear heat preservation zone heating element are sequentially arranged in a furnace body from bottom to top, the centers of the preheating zone heating element, the growth zone heating element and the rear heat preservation zone heating element are cavities, and the cavities are used for a crucible and/or a seed rod to stay or pass through up and down; a crucible inlet and outlet channel is arranged in the center of the furnace body bottom plate, and the center of the crucible inlet and outlet channel, the centers of the heating body cavities, the centers of the cover plate communication openings and the seed rod are positioned on the same vertical line; the first gate baffle mechanism is horizontally arranged and separates the heating element in the preheating area from the heating element in the growing area, and the second gate baffle mechanism is horizontally arranged and separates the heating element in the growing area from the heating element in the rear heat preservation area; when the first gate baffle mechanism and the second gate baffle mechanism are closed, the center of the first gate baffle mechanism and the second gate baffle mechanism forms a closed hole which is only matched with the crucible and/or the seed rod and is used for the upward and downward passing of the crucible and/or the seed rod.
2. The device for realizing the continuous growth of the crystal according to claim 1, characterized in that: the first gate baffle mechanism and the second gate baffle mechanism respectively comprise a support flat plate, gate baffles, connecting rods and a driving part, the support flat plate of the first gate baffle mechanism is placed on the upper surface of a heating body in a preheating region, the support flat plate of the second gate baffle mechanism is placed on the upper surface of a heating body in a growth region, a vertical through hole is formed in the center of the support flat plate, horizontal sliding grooves are respectively formed in the two sides of the through hole in the upper surface of the support flat plate, the two gate baffles are respectively positioned in the sliding grooves in the two sides, opposite ends of the two gate baffles are provided with notches, the back end of each gate baffle is respectively connected with the driving part through the connecting rods, and the driving part is installed on the wall of the furnace body; under the drive of the driving part, the two gate baffles can move towards each other or move back to back through the sliding chute, and the two notches can be folded to form the closed hole matched with the crucible and/or the seed rod for the upward and downward passing of the closed hole when the two notches move towards each other.
3. The apparatus for realizing continuous crystal growth according to claim 2, wherein: the notch is a semicircular notch, and the two notches are folded to form a round hole.
4. The apparatus for realizing continuous crystal growth according to claim 1, wherein: the furnace body is of a sandwich structure formed by an inner wall and an outer wall, circulating cooling water is arranged in the sandwich structure, and a cooling water inlet and a cooling water outlet are arranged on the outer wall.
5. The apparatus for realizing continuous crystal growth according to claim 1, wherein: the crucible translation mechanism comprises a horizontal mounting substrate, a translation sliding block, a movable connecting plate, a translation lead screw and a translation lead screw driving motor, wherein the mounting substrate is fixed on a cross beam at the bottom of the bracket; a horizontal threaded hole is formed in the translation sliding block, a translation screw rod is in threaded connection with the translation sliding block through the threaded hole, and two ends of the translation screw rod are mounted on the mounting substrate through a bearing and a bearing seat; one end of the translation screw rod penetrates through the bearing seat to be connected with a translation screw rod driving motor, and the crucible lifting and rotating mechanism is arranged on the movable connecting plate; under the drive of a translation lead screw drive motor, a translation sliding block can reciprocate along a sliding rail on the mounting substrate, and further drives a movable connecting plate and a crucible lifting and rotating mechanism on the movable connecting plate to reciprocate in the horizontal direction.
6. The apparatus for realizing continuous crystal growth according to claim 1, wherein: the crucible lifting and rotating mechanism comprises a vertical supporting vertical plate, a lifting slide block, a lifting screw rod driving motor, a crucible rotating motor supporting plate, a crucible rotating motor, a crucible supporting rod and a crucible holder, wherein the lifting slide block is arranged on the vertical surface of the supporting vertical plate through a slide rail; a vertical threaded hole is formed in the lifting slide block, the lifting screw rod is in threaded connection with the lifting slide block through the threaded hole, and two ends of the lifting screw rod are mounted at the upper end and the lower end of the supporting vertical plate through a bearing and a bearing seat; the lower end of the supporting vertical plate is fixedly connected with a movable connecting plate of the crucible translation mechanism; the upper end of the lifting screw rod penetrates through the bearing block to be connected with a lifting screw rod driving motor; a crucible rotating motor supporting plate is fixed on the lifting slide block, a crucible rotating motor is arranged on the crucible rotating motor supporting plate, the lower end of the crucible supporting rod is connected with an output shaft of the crucible rotating motor, a crucible support is arranged at the upper end of the crucible supporting rod, and a crucible is positioned on the upper surface of the crucible support; under the drive of a lifting lead screw drive motor, a lifting slide block can reciprocate along a slide rail on a supporting vertical plate, so as to drive a crucible rotating motor supporting plate, a crucible rotating motor, a crucible supporting rod, a crucible support and a crucible on the crucible rotating motor supporting plate to move up and down; the crucible rotating motor can drive the crucible to rotate horizontally through the crucible supporting rod and the crucible support.
7. The apparatus for realizing continuous crystal growth according to claim 6, wherein: the crucible holds in the palm the upper surface and has the pit that agrees with crucible bottom shape, and the crucible is placed in the pit and is spacing through the pit.
8. The device for realizing the continuous growth of the crystal according to claim 1, characterized in that: the support is a rectangular frame structure formed by welding square steel or splicing aluminum profiles, four corners of the bottom of the support are respectively provided with height-adjustable ground feet, and the top of the support is provided with a threaded connector for mounting the furnace body.
9. The apparatus for realizing continuous crystal growth according to claim 1, wherein: the preheating zone heating element, the growth zone heating element and the rear heat preservation zone heating element are composed of hollow columnar matrixes and heating elements arranged on the hollow inner surfaces of the matrixes; the hollow region of the substrate constitutes the cavity.
10. An apparatus for realizing continuous crystal growth according to claim 9, wherein: the base body is made of low-heat-conduction material; the heating element is a resistance wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210854214.XA CN115404538B (en) | 2022-07-20 | 2022-07-20 | Device capable of realizing continuous growth of crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210854214.XA CN115404538B (en) | 2022-07-20 | 2022-07-20 | Device capable of realizing continuous growth of crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115404538A true CN115404538A (en) | 2022-11-29 |
| CN115404538B CN115404538B (en) | 2023-08-22 |
Family
ID=84157781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210854214.XA Active CN115404538B (en) | 2022-07-20 | 2022-07-20 | Device capable of realizing continuous growth of crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115404538B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117187953A (en) * | 2023-10-25 | 2023-12-08 | 江苏科罗兹硅业有限公司 | Monocrystalline silicon preparation furnace and monocrystalline silicon preparation method |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008086705A1 (en) * | 2006-12-29 | 2008-07-24 | Jiaxing University | Crystal producing system used in temperature gradient method by rotating multiple crucibles |
| US20100294198A1 (en) * | 2006-12-29 | 2010-11-25 | Youbao Wan | Crystal growing system having multiple rotatable crucibles and using a temperature gradient method |
| JP2012001435A (en) * | 2011-10-05 | 2012-01-05 | Solaicx Inc | System for continuous growth of single crystal silicon |
| WO2013141473A1 (en) * | 2012-03-20 | 2013-09-26 | (주)세미머티리얼즈 | Multi-crucible silicon ingot growing apparatus |
| WO2017209376A2 (en) * | 2016-05-30 | 2017-12-07 | 주식회사 사파이어테크놀로지 | Growth apparatus for silicon carbide single crystal ingot, and growth method therefor |
| CN107955969A (en) * | 2017-12-28 | 2018-04-24 | 河北同光晶体有限公司 | A kind of SiC single crystal growing system being persistently fed |
| CN108728897A (en) * | 2017-04-14 | 2018-11-02 | 信越化学工业株式会社 | The method for preparing SiC single crystal |
| US20190352794A1 (en) * | 2017-12-08 | 2019-11-21 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Device and method for continuous vgf crystal growth through rotation after horizontal injection synthesis |
| CN112553691A (en) * | 2020-12-02 | 2021-03-26 | 中电化合物半导体有限公司 | Silicon carbide crystal growth method and growth device |
| WO2022052080A1 (en) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | Edge-defined film-fed growth method-based sapphire crystal growth furnace capable of replacing seed crystals for multiple times |
-
2022
- 2022-07-20 CN CN202210854214.XA patent/CN115404538B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008086705A1 (en) * | 2006-12-29 | 2008-07-24 | Jiaxing University | Crystal producing system used in temperature gradient method by rotating multiple crucibles |
| US20100294198A1 (en) * | 2006-12-29 | 2010-11-25 | Youbao Wan | Crystal growing system having multiple rotatable crucibles and using a temperature gradient method |
| JP2012001435A (en) * | 2011-10-05 | 2012-01-05 | Solaicx Inc | System for continuous growth of single crystal silicon |
| WO2013141473A1 (en) * | 2012-03-20 | 2013-09-26 | (주)세미머티리얼즈 | Multi-crucible silicon ingot growing apparatus |
| WO2017209376A2 (en) * | 2016-05-30 | 2017-12-07 | 주식회사 사파이어테크놀로지 | Growth apparatus for silicon carbide single crystal ingot, and growth method therefor |
| CN108728897A (en) * | 2017-04-14 | 2018-11-02 | 信越化学工业株式会社 | The method for preparing SiC single crystal |
| US20190352794A1 (en) * | 2017-12-08 | 2019-11-21 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Device and method for continuous vgf crystal growth through rotation after horizontal injection synthesis |
| CN107955969A (en) * | 2017-12-28 | 2018-04-24 | 河北同光晶体有限公司 | A kind of SiC single crystal growing system being persistently fed |
| WO2022052080A1 (en) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | Edge-defined film-fed growth method-based sapphire crystal growth furnace capable of replacing seed crystals for multiple times |
| CN112553691A (en) * | 2020-12-02 | 2021-03-26 | 中电化合物半导体有限公司 | Silicon carbide crystal growth method and growth device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117187953A (en) * | 2023-10-25 | 2023-12-08 | 江苏科罗兹硅业有限公司 | Monocrystalline silicon preparation furnace and monocrystalline silicon preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115404538B (en) | 2023-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2010005705A1 (en) | Systems and methods for growing monocrystalline silicon ingots by directional solidification | |
| CN115404538A (en) | Device capable of realizing continuous growth of crystal | |
| WO2008086705A1 (en) | Crystal producing system used in temperature gradient method by rotating multiple crucibles | |
| KR20120070080A (en) | Single crystal growth device | |
| CN107881550A (en) | A kind of crystal growth method by melt method of large-size crystals | |
| CN101400834A (en) | Silicon single-crystal pullup apparatus | |
| CN113308738B (en) | Method for preparing compound semiconductor crystal by combining continuous LEC and VGF after injection synthesis | |
| CN115323478B (en) | Method for realizing continuous growth of crystal | |
| CN113462903A (en) | Metal purification device and purification method | |
| CN215713513U (en) | Heating body in Bridgman method | |
| CN114941171B (en) | Device and process method for growing quasi-rectangular column monocrystalline silicon by using Czochralski method | |
| KR101292703B1 (en) | Apparatus for single crystal growth | |
| CN113308739B (en) | System for preparing compound semiconductor crystal by combining continuous LEC and VGF after injection synthesis | |
| CN210856408U (en) | Crystal growth furnace provided with furnace body lifting mechanism | |
| CN114277434A (en) | Thermal field adjusting device and method for single crystal growth | |
| WO2022052080A1 (en) | Edge-defined film-fed growth method-based sapphire crystal growth furnace capable of replacing seed crystals for multiple times | |
| CN1296299C (en) | Drawing method and device for glass tank furnace | |
| CN218262819U (en) | Device for simultaneously drawing multiple crystals by using high-frequency coil | |
| CN1045427A (en) | The preparation method of conductor refrigeration oriented crystal and equipment | |
| JP2001031496A (en) | Apparatus and method for producing silicon ribbon | |
| CN220450020U (en) | High-temperature kiln | |
| CN1216185C (en) | Method of growing near chemical gauge ratio lithium niobate monocrystal using crucible lowering method | |
| CN214458447U (en) | Crystal growing device | |
| CN219966409U (en) | High-temperature alloy directional solidification temperature gradient control device | |
| CN219059205U (en) | Device for improving temperature of melt in middle of crucible in artificial crystal furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |