CN115613118A - Device for improving temperature of molten liquid at central part of crucible - Google Patents
Device for improving temperature of molten liquid at central part of crucible Download PDFInfo
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- CN115613118A CN115613118A CN202211184209.9A CN202211184209A CN115613118A CN 115613118 A CN115613118 A CN 115613118A CN 202211184209 A CN202211184209 A CN 202211184209A CN 115613118 A CN115613118 A CN 115613118A
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- crucible
- heater
- central part
- heating source
- heating
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- 239000007788 liquid Substances 0.000 title claims description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 135
- 239000013078 crystal Substances 0.000 claims abstract description 66
- 239000000155 melt Substances 0.000 claims abstract description 48
- 230000007246 mechanism Effects 0.000 claims description 61
- 238000001816 cooling Methods 0.000 claims description 35
- 239000002994 raw material Substances 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 22
- 238000009413 insulation Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 16
- 238000002425 crystallisation Methods 0.000 abstract description 9
- 230000008025 crystallization Effects 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 6
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 238000009826 distribution Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 239000002210 silicon-based material Substances 0.000 description 7
- 230000001174 ascending effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 244000144985 peep Species 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/005—Simultaneous pulling of more than one crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
A device for improving the temperature of a melt at the central part of a crucible relates to the field of artificial crystal preparation, a central heating source is arranged above the central part of the crucible, the central part of the crucible is heated by the central heating source, so that the temperature of the central part of the crucible is increased, the uniformity of the temperature of the central part of the crucible and the peripheral temperature of the central part of the crucible is realized, the phenomenon of melt crystallization caused by low temperature of the central part of the crucible in the drawing process is avoided, meanwhile, the viscosity of the melt can be increased by reducing the heating power of a heater, and the drawing speed is further improved.
Description
Technical Field
The invention relates to the field of artificial crystal preparation, in particular to a device for improving the temperature of a molten solution at the central part of a crucible.
Background
It is known that in the field of artificial crystal preparation, how to control the temperature gradient of a melt in a crucible is one of the key technologies, and taking multi/monocrystalline silicon preparation as an example, in the whole production process of the multi/monocrystalline silicon, the usage amount of a cylindrical silicon rod with the diameter of 8 mm-12 mm is very large, in the actual production process, excess materials occurring in the preparation process of the cylindrical silicon rod, silicon rods which are broken carelessly, crushed materials generated by multi/monocrystalline silicon production enterprises in the process stages of cutting, crushing and the like are very complicated to process, many enterprises directly discard the crushed materials or stack the crushed materials in a warehouse for saving trouble, and other enterprises recycle the crushed materials, draw the crushed materials into silicon rods through a czochralski furnace, and then cut the silicon rods into a plurality of cylindrical silicon rods with the size of 8mm × 8mm or 10mm × 0mm through a multi-wire cutting machine, so that not only the production cost of the cylindrical silicon rods is increased, but also the introduction of impurities is increased in the cutting process, and the technology of how to recycle the crushed silicon rods into 10mm technology in the field is required for a long time.
The inventors have found, through search, that the technique for pulling a silicon rod using the czochralski method is well-established and has been widely used in the field of intraocular lens preparation, but the conventional czochralski method, when pulling a silicon rod, first places a silicon material in a crucible, then, the heater is started to heat the silicon material in the crucible, at this time, the temperature distribution of the crucible is as shown in fig. 7 (fig. 7 is a finite element analysis diagram of the heated temperature of the crucible, and it is obvious from fig. 6 that the temperature of the central part of the crucible is obviously lower than the temperature of the periphery of the crucible (it should be noted that, in fig. 7, the red region with the highest temperature and the blue region with the lowest temperature are in red region, that is, the closer to the heater, the higher the temperature is), the periphery of the crucible is close to the heater, and the central part of the crucible is far away from the heater, therefore, the temperature distribution of the crucible is gradually reduced from the inner side wall of the crucible to the central part of the crucible from high to low, after the silicon material in the crucible is melted, the upper pulling mechanism arranged above the central part of the crucible drives a seed crystal to descend, when the lower end of the seed crystal is contacted with the melt in the crucible and is melted into a whole, in order to ensure that the melt can rise along with the seed crystal, the viscosity of the melt is increased by reducing the heating power of the heater (because the czochralski method only carries out seeding and pulling on the central part of the crucible, the temperature of the central part of the crucible is lower than the temperature of the periphery of the crucible, which is beneficial to the crystallization of the pulled silicon rod), then the seed crystal is driven by the upper pulling mechanism to rise slowly, at the same time, the melt rises along with the seed crystal, when the melt adhered on the seed crystal is gradually separated from the melt in the crucible, as the temperature is lowered, the melt adhering to the seed crystal gradually crystallizes, and thus a new silicon rod is formed as needed.
For example, the invention patent of China has the patent number of 201320678696.4, the application date of 2013, 10 and 30 months, the publication number of CN203639604U, and the patent name of the invention is a flexible shaft pulling type single crystal furnace; the invention discloses a Chinese patent with the patent number of 202011063763.2, the application date of 2020, 9 and 30 days, and the publication number of CN112176400A, and discloses a Czochralski method single crystal furnace and a melt temperature gradient control method thereof. The technical schemes disclosed in the two patents are both the technical scheme for drawing the silicon rod by adopting the czochralski method, but the two technical schemes can only realize the simultaneous drawing of one silicon rod and cannot realize the simultaneous drawing of a plurality of silicon rods.
At this time, the inventor has found through analysis that, because the central region of the crucible is relatively small, the method can only simultaneously draw one silicon rod, and cannot simultaneously draw a plurality of silicon rods, and in order to simultaneously draw a greater number of silicon rods, the pulling region of the silicon rod can only be moved from the central portion of the existing crucible to the outer side of the central portion of the crucible (avoiding the central position of the crucible), and the number of the silicon rods can be drawn more as the pulling region of the silicon rod is moved from the central portion of the existing crucible to the outer side of the central portion of the crucible, and the silicon rod is drawn by repeating the experiment, and the following disadvantages mainly exist when the silicon rod is drawn:
1. during drawing, the melt in the central part of the crucible will crystallize along with the reduction of heating power, specifically: when the temperature of a drawing area at the periphery of the central part of the crucible is reduced to reach the drawing requirement, the temperature of the central part of the crucible is lower than the temperature at the periphery of the central area, the heating power of the heater is reduced, the melt at the central part of the crucible is easy to crystallize due to the fact that the temperature reaches the crystallization temperature, and the drawing is interrupted due to the fact that the melt at the middle part of the crucible is crystallized seriously.
2. In order to avoid crystallization of the melt in the central part of the crucible, the temperature of the melt in the central part of the crucible can only be kept above the crystallization temperature all the time, and the temperature of the melt at the periphery of the central part of the crucible is higher than the crystallization temperature at the moment.
3. The temperature uniformity of the melt at the central part of the crucible and the periphery of the central part of the crucible cannot be realized.
Therefore, a long-term technical demand of those skilled in the art is to provide a device which can prevent the melt from crystallizing at the central portion of the crucible while ensuring the crystal pulling speed.
Disclosure of Invention
In order to overcome the defects in the background art, the invention provides a device for improving the temperature of the melt at the central part of a crucible.
In order to achieve the purpose, the invention adopts the following technical scheme:
the utility model provides a device for improving crucible center part melt temperature, includes middle part heating source, furnace body, goes up and draws mechanism, heater and crucible, the heater sets up in inclosed furnace body, is equipped with the crucible at the middle part of heater, is equipped with the raw materials in the crucible, is equipped with the middle part heating source in the top of crucible center part, the middle part heating source heats the center part of crucible, is equipped with on the upper portion of furnace body and draws the mechanism, go up and draw the mechanism and go up the lower terminal of seed crystal and correspond the crucible and form the device of improvement crucible center part melt temperature.
The device for improving the temperature of the molten liquid at the central part of the crucible is characterized in that the crucible is lifted up and down or the middle heating source is lifted up and down to ensure the distance between the middle heating source and the liquid level of the molten liquid in the crucible.
The device for improving the temperature of the molten liquid in the central part of the crucible is characterized in that the lower end of the crucible is connected with a lower shaft which can lift up and down.
The device for improving the temperature of the molten liquid at the central part of the crucible is characterized in that a crystal cooling mechanism is arranged above the crucible.
The device for improving the temperature of the molten liquid in the central part of the crucible is characterized in that a heat insulation layer is arranged between the outer side wall of the heater and the inner wall of the furnace body.
The device for improving the temperature of the molten liquid in the central part of the crucible is characterized in that a lower heater is arranged below the crucible and heats the bottom of the crucible.
The device for improving the temperature of the molten liquid at the central part of the crucible is characterized in that the middle heating source is any one of a laser heater or a single-pound heating coil or a multi-pound heating coil.
When the middle heating source is a laser heater, a laser beam emitted by the laser heater corresponds to the central part of the crucible, and the laser heater is connected with a power supply.
According to the device for improving the temperature of the molten liquid at the central part of the crucible, the laser heater is arranged on the outer side of the glass, the glass is arranged on the peephole, the peephole is arranged on the furnace body, and the laser beam emitted by the laser heater penetrates through the central part of the glass, corresponding to the crucible.
The device for improving the temperature of the molten liquid at the central part of the crucible is characterized in that a valve is arranged between the glass and the peephole.
The device for improving the temperature of the molten liquid at the central part of the crucible is characterized in that the glass is quartz glass.
When the middle heating source is a single-smashing heating coil, the single-smashing heating coil is arranged above the raw material at the central part of the crucible, and the single-smashing heating coil is connected with the coil fixing mechanism.
When the middle heating source is a multi-pound heating coil, the multi-pound heating coil is arranged above the raw material at the central part of the crucible, and the multi-pound heating coil is connected with the coil fixing mechanism.
The device for improving the temperature of the molten liquid at the central part of the crucible is characterized in that the coil fixing mechanism is connected with the lifting mechanism.
The coil fixing mechanism is connected with a heating electrode at the bottom of the furnace or a heating electrode at the upper part of the furnace cylinder or a heating electrode on the furnace cover.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
the central heating source is arranged above the central part of the crucible, the central part of the crucible is heated by the central heating source, so that the temperature of the central part of the crucible is increased, the uniformity of the temperature of the central part of the crucible and the peripheral temperature of the central part of the crucible is realized, the phenomenon of melt crystallization caused by low temperature of the central part of the crucible in the drawing process is avoided, meanwhile, the viscosity of the melt can be increased by reducing the heating power of the heater, and the drawing speed is further improved.
Drawings
FIG. 1 is a schematic view of a structure in which a middle heating source is provided as a laser heater according to the present invention;
FIG. 2 is a schematic top view of the crucible of FIG. 1;
FIG. 3 is a schematic structural view of a middle heating source of the present invention configured as a single pound heating coil;
FIG. 4 is a schematic structural view of a middle heating source of the present invention configured as a multiple-pound heating coil;
FIG. 5 is a schematic view of a first configuration of the present invention with a crystal cooling mechanism;
FIG. 6 is a second schematic diagram of the present invention with a crystal cooling mechanism;
FIG. 7 is a schematic view showing the distribution of temperature after heating when the conventional crucible is not provided with a central heating source;
FIG. 8 is a schematic view a showing the temperature distribution of the crucible after being heated when it is provided with a central heating source according to the present invention;
FIG. 9 is a schematic view b showing the temperature distribution of the crucible after being heated when the crucible is provided with a central heating source according to the present invention;
FIG. 10 is a schematic view c showing the temperature distribution of the crucible after being heated when the crucible is provided with a central heating source according to the present invention;
in the figure: 1. a laser heater; 2. an upper pulling mechanism; 3. a furnace cover; 4. columnar crystals; 5. a furnace barrel; 6. a heat-insulating layer; 7. a heater; 8. raw materials; 9. a crucible; 10. a crucible support; 11. an electrode; 12. a coil fixing mechanism; 13. heating coils are singly smashed; 14. smashing a heating coil; 15. a crystal cooling mechanism; 16. a laser beam; 17. glass; 18. a valve; 19. a peephole.
Detailed Description
The present invention will be explained in more detail by the following examples, which are intended to disclose all changes and modifications within the scope of the present invention, and the present invention is not limited to the following examples;
in the description of the present invention, it is to be understood that the terms "central," "lateral," "length," "width," "height," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "side," and the like are used in the indicated orientations and positional relationships based on those shown in fig. 1, merely for convenience of description and to simplify the description, and are not intended to indicate or imply that the referenced apparatus or component must have a particular orientation, be constructed and operated in a particular orientation, and are not to be construed as limiting the invention.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The device for improving the temperature of the molten liquid at the central part of the crucible, which is described with reference to fig. 1 to 6, comprises a middle heating source, a furnace body, a top pulling mechanism 2, a heater 7 and a crucible 9, wherein the heater 7 is arranged in the sealed furnace body, the lower end of the heater 7 is connected with an electrode 11 arranged on the bottom of the furnace, in specific implementation, the furnace body comprises a furnace cover 3, a furnace cylinder 5 and the bottom of the furnace, the furnace cylinder 5 is arranged on the top of the bottom of the furnace, the furnace cover 3 is arranged on the top of the furnace cylinder 5 to form a sealed cavity, a heat insulation layer 6 is arranged between the outer side wall of the heater 7 and the inner wall of the furnace body, and the heater 7 and the crucible 9 are positioned in a relatively stable temperature field (i.e. a thermal field with relatively stable temperature is formed) through the arrangement of the heat insulation layer 6;
further, a crucible 9 with a fixed position or capable of ascending and descending up and down is arranged in the middle of the heater 7, a raw material 8 is arranged in the crucible 9, a middle heating source with a fixed position or capable of ascending and descending up and down is arranged above the central part of the crucible 9, the middle heating source heats the central part of the crucible 9, in the specific implementation, the middle heating source is any one of a laser heater 1, a single-pound heating coil 13 or a multiple-pound heating coil 14, and the middle heating source can also be a plasma heater (plasma heating is applied in the field of heating crystalline silicon) or an electric arc heater, that is, the middle heating source can be used as long as an instrument capable of heating the raw material 8 is used;
furthermore, an upper pulling mechanism 2 is arranged at the upper part of the furnace body, and the lower end of the seed crystal on the upper pulling mechanism 2 corresponds to the crucible 9 to form the device for improving the temperature of the melt at the central part of the crucible. In practice, the upper pulling mechanism 2 is a structure commonly used in the art, and is not the key point of the protection of the present invention, and therefore, the specific structure thereof will not be described in detail.
In practice, a lower heater may be provided below the crucible 9, and the lower heater heats the bottom of the crucible 9.
Further, the crucible 9 is lifted up and down or the middle heating source is lifted up and down to ensure that the distance between the middle heating source and the liquid level of the molten liquid in the crucible 9 tends to be constant, and during implementation, the distance between the lower surface of the middle heating source and the liquid level of the molten liquid in the crucible 9 can be ensured to be constant no matter whether the crucible 9 is lifted up and down or the middle heating source is lifted up and down.
Further, in order to realize that the distance between the lower surface of the middle heating source and the liquid level of the melt in the crucible 9 tends to be constant, the preferable structure is a scheme that the crucible 9 is lifted up and down, and the position of the middle heating source is not fixed, and the lifting up and down of the crucible 9 is a conventional and commonly used technical scheme in the field, when the crucible is implemented, the lower end of the crucible 9 can be connected with a lower shaft which is lifted up and down, or the crucible 9 is arranged on a crucible support 10, and the lower end of the crucible support 10 is connected with the lower shaft which is lifted up and down; the crucible 9 is lifted up and down through the lifting of the lower shaft 9, the technical scheme has a simple structure, and the crystallization line of the crystal can be always kept unchanged (namely the liquid level of the molten liquid is always at the fixed position of the heater).
If the middle heating source is selected to ascend and descend vertically, the crucible 9 is fixed, the middle heating source is connected with the lifting mechanism when the middle heating source realizes the ascending and descending function, and the middle heating source is driven by the lifting mechanism to ascend and descend vertically, it should be noted that the lifting mechanism is a conventional technology in the field, and the specific structure can be referred to the patent number 202220616149.2 applied by the inventor at 21/3/2022, and the patent name is a cooling screen lifting device for the artificial crystal furnace, and the device can also realize the ascending and descending of the middle heating source.
Further, when implementing, be equipped with the crystal cooling body 15 of rigidity or oscilaltion in the top of crucible 9, crystal cooling body 15 external cooling source, during specific application, select crucible 9 oscilaltion, during the unchangeable scheme of middle part heating source position, crystal cooling body 15 can set up to fixed form, specifically as shown in fig. 5, crystal cooling body 15 sets up the top at crucible 9 this moment, set up the middle part heating source between crystal cooling body 15 and crucible 9, when the middle part heating source selects laser heater 1, laser heater 1's laser beam passes the hole at crystal cooling body 15 middle part and shines the central part of crucible 9, and then realizes heating raw materials 8 or the melt at crucible 9 center. When the crucible 9 is selected to be fixed and the middle heating source ascends and descends, the crystal cooling mechanism 15 ascends and descends along with the crucible, the ascending and descending scheme of the crystal cooling mechanism 15 is the conventional technology in the field, the specific structure can be referred to the patent number 202220616149.2 applied by the inventor at 3/21/2022, the patent name is a cooling screen ascending and descending device for the artificial crystal furnace, the description is not repeated, the specific structure of the crystal cooling mechanism 15 is referred to the specific structure of the patent number 202210278020.X applied by the inventor at 3/21/2022, the patent name is a crystal cooling device for the artificial crystal furnace.
Meanwhile, the specific structure of the crystal cooling mechanism 15 in the invention can also be a cooling device applied in 2021, 7, 8, with the patent number of 202121548804.7, entitled as a cooling device for simultaneously drawing a plurality of silicon cores by using crushed silicon material, or a cooling screen applied in 2021, 7, 8, with the patent number of 202121548805.1, entitled as a cooling screen for simultaneously drawing a plurality of silicon cores by using crushed silicon material, or a device applied in 2021, 7, 8, 202121549279.0, entitled as a device for simultaneously drawing a plurality of silicon cores by using crushed silicon material.
In specific implementation, when the middle heating source is set as the laser heater 1, the laser beam 16 emitted by the laser heater 1 corresponds to the central part of the crucible 9, and the laser heater 1 is connected with a power supply. In a specific implementation, the laser heater 1 is disposed at an upper portion of the furnace body, specifically, as shown in fig. 1, when the laser heater 1 is disposed at an outer portion of the furnace body, the laser heater 1 is disposed at an outer side of a glass 17, the glass 17 is preferably quartz glass, the glass 17 is disposed on a peep hole 19, the peep hole 19 is disposed on the furnace body, a laser beam 16 emitted by the laser heater 1 passes through the glass 17 and corresponds to a central portion of the crucible 9, further, a valve 18 may be disposed between the glass 17 and the peep hole 19, specifically, when the volatile is heated and melted, the volatile may be generated from the raw material 8 in the crucible 9, when the volatile passes through the peep hole 19 and adheres to an inner side surface of the glass 17, the laser beam 16 emitted by the laser heater 1 may be blocked by the volatile adhered to the inner side surface of the glass 17, and then the heating temperature of the laser heater 1 to the central portion of the crucible 9 is reduced, and in order to clean the glass 17, an operator may close the valve 18 between the glass 17 and clean the glass 17, and then load the glass 17 again, and heat the laser beam 16 of the crucible 9. In specific application, when the liquid level of the melt in the crucible 9 is lowered, if the crucible 9 is not moved, the laser heater 1 rotates, and the laser beam 16 emitted by the laser heater 1 is always ensured to irradiate the liquid level at the central part of the crucible 9.
During implementation, if the light beam of the laser heater 1 is reflected, a reflector can be arranged on the path of the reflected light beam, the reflected light beam is reflected to the liquid level of the molten liquid at the center of the crucible again through the reflector or the energy of the reflected light beam is absorbed by the reflector, the reflected light beam is not reflected to the liquid level at the center of the crucible any more, and if the light beam is reflected to the liquid level at the center of the crucible through the reflector, the heat loss caused by heating the light beam can be prevented, and the heating of other components in the furnace body by the light beam can be avoided; the laser heater 1 is a standard part and can be directly purchased and obtained from the market.
When the laser heater 1 is arranged on the top of the furnace cover 3 on the furnace body, the laser beam 16 of the laser heater 1 can irradiate the raw material 8 positioned at the central part of the crucible 9 from top to bottom, or the laser heater 1 is arranged on the furnace barrel 5 on the furnace body, then a reflector is arranged in the furnace body above the laser heater 1, the laser beam 16 of the laser heater 1 firstly irradiates the reflector, and the reflector reflects the laser beam 16 onto the raw material 8 positioned at the central part of the crucible 9, during the specific implementation, the specific structure can be selected according to the structure of the furnace body, the laser heater 1 can be arranged in the furnace body or outside the furnace body, the specific arrangement form can be specifically selected according to the structure of the furnace body, the laser beam 16 emitted by the laser heater 1 corresponds to the raw material 8 positioned at the central part of the crucible 9, and the laser heater 1 is connected with a power supply. Specifically, as shown in fig. 1, 2, and 5, the laser heater 1 is disposed on the furnace cover 3, the laser beam 16 emitted by the laser heater 1 irradiates the raw material 8 through the gap between the two columnar crystals 4, and when the crystal cooling mechanism 15 is disposed above the crucible 9, the laser beam 16 emitted by the laser heater 1 penetrates through the inner hole located in the middle of the crystal cooling mechanism 15 and irradiates the raw material 8 through the gap between the two columnar crystals 4.
When the middle heating source is a single-smashing heating coil 13, the single-smashing heating coil 13 is arranged above the raw material 8 at the central part of the crucible 9, namely the single-smashing heating coil 13 is arranged between the crucible 9 and the crystal cooling mechanism 15, and in implementation, the outer edge surface of the single-smashing heating coil 13 is positioned in the range of the inner ring of a crystal cooling hole arranged on the crystal cooling mechanism 15 and cannot influence the crystal drawing; the single-smashing heating coil 13 is connected with a coil fixing mechanism 12, the coil fixing mechanism 12 is used for electrifying the single-smashing heating coil 13 or communicating water, and the coil fixing mechanism 12 is connected with a heating electrode at the bottom of the furnace or a heating electrode at the upper part of the furnace barrel 5 or a heating electrode on the furnace cover 3. In specific implementation, the structure and the arrangement position of the coil fixing mechanism 12 are not the key points for protection of the present invention, the main function is to fix the single-pound heating coil 13 and supply power to the single-pound heating coil 13 or supply power to the single-pound heating coil 13, and the structural form of the coil fixing mechanism 12 is conventional in the art, so that a detailed description will not be made herein. Specifically, the single-hit heating coil 13 induction-heats the raw material 8 or the melt after melting the raw material 8 in the central portion of the crucible 9, thereby ensuring that the melt in the central portion of the crucible 9 is not crystallized.
When the middle heating source is a multi-pound heating coil 14, the multi-pound heating coil 14 is arranged above the raw material 8 at the central part of the crucible 9, namely the multi-pound heating coil 14 is arranged between the crucible 9 and the crystal cooling mechanism 15, and in implementation, the outer edge surface of the multi-pound heating coil 14 is positioned in the range of the inner ring of a crystal cooling hole arranged on the crystal cooling mechanism 15 and cannot influence the crystal drawing; the multi-pound heating coil 14 is connected with the coil fixing mechanism 12, and the coil fixing mechanism 12 is electrified or electrified by the multi-pound heating coil 14. The coil fixing mechanism 12 is connected with a heating electrode at the bottom of the furnace or the heating electrode at the upper part of the furnace cylinder 5 or the heating electrode on the furnace cover 3. In specific implementation, the structure and the arrangement position of the coil fixing mechanism 12 are not the key points of the protection of the present invention, and the main function is to fix the multi-pound heating coil 14 and supply power to the multi-pound heating coil 14 or supply power to water, and the structural form of the coil fixing mechanism 12 is conventional in the art, so that a lot of description is not provided herein. Specifically, the heating coil 14 is used to inductively heat the raw material 8 or the melt of the molten raw material 8 in the central portion of the crucible 9, thereby ensuring that the melt in the central portion of the crucible 9 is not crystallized.
In practice, the coil fixing mechanism 12 is connected with the lifting mechanism or the coil fixing mechanism 12 is connected with a heating electrode on the bottom of the furnace or a heating electrode on the upper part of the furnace cylinder 5 or a heating electrode on the furnace cover 3.
As shown in fig. 8, 9 and 10, fig. 8 is a distribution diagram of the heated temperature of the crucible 9 when the heating power of the central heating source is set to 1000w, fig. 9 is a distribution diagram of the heated temperature of the crucible 9 when the heating power of the central heating source is set to 1200w, and fig. 10 is a distribution diagram of the heated temperature of the crucible 9 when the heating power of the central heating source is set to 1500 w.
The specific application examples of the invention are as follows:
the invention realizes that the melt at the central part of the crucible 9 is not crystallized due to too low temperature in the crystal drawing process by arranging the central heating source above the central part of the crucible 9 and heating the central part of the crucible 9 through the central heating source, and the specific method comprises the following steps:
firstly, putting raw materials 8 into a crucible 9 in a crystal growth furnace;
secondly, turning on a power supply, wherein the heater 7 independently heats the crucible 9, or the heater 7 and a middle heating source simultaneously heat the crucible 9 until the raw material 8 in the crucible 9 is melted and forms a melt;
thirdly, the upper pulling mechanism 2 drives a group of seed crystals to descend, the seed crystals pass through the cooling holes in the crystal cooling mechanism 15 and then contact with the melt in the crucible 9, when the lower ends of the seed crystals are melted and are melted with the melt, the upper pulling mechanism 2 is slowly lifted, the seed crystals are driven by the upper pulling mechanism 2 to slowly ascend, the melt ascends along with the seed crystals, when the melt moves upwards along with the seed crystals and passes through the crystal cooling holes in the crystal cooling mechanism 15, crystallization gradually starts along with the reduction of temperature, and in the pulling process, the middle heating source always heats the melt in the middle of the crucible 9, so that the phenomenon that the middle of the crucible 9 is crystallized due to the low temperature is effectively avoided;
fourthly, through the steps, the melt liquid forms a group of new columnar crystals 4 along with the seed crystals, and the seed crystals are driven by the lifting mechanism 2 to slowly rise so as to form finished columnar crystals 4 with required length;
fifthly, along with the reduction of the liquid level of the molten liquid in the crucible 9, the distance between the lower surface of the middle heating source and the liquid level of the molten liquid is ensured in a mode that the crucible 9 rises or the middle heating source falls;
and sixthly, repeating the steps to realize a plurality of crystal drawing processes.
Experiments show that the drawing speed can be increased to 7.1mm/min from the existing 5mm/min on the premise of ensuring that the melt at the central part of the crucible 9 is not crystallized, taking a silicon rod with the drawing diameter of 15mm as an example.
When the invention is practically applied, the invention not only can be used for drawing silicon materials, but also can realize the drawing of other crystal materials.
The details of the above are not described in detail since they are prior art.
The embodiments selected for the purpose of disclosing the invention are presently considered to be suitable, however, it should be understood that the invention is intended to cover all variations and modifications of the embodiments falling within the spirit and scope of the present inventive concept.
Claims (15)
1. The utility model provides a device for improve crucible center part melt temperature, includes middle part heating source, furnace body, goes up pulling mechanism (2), heater (7) and crucible (9), characterized by: the device is characterized in that the heater (7) is arranged in a closed furnace body, a crucible (9) is arranged in the middle of the heater (7), raw materials (8) are arranged in the crucible (9), a middle heating source is arranged above the central part of the crucible (9), the central part of the crucible (9) is heated by the middle heating source, an upper pulling mechanism (2) is arranged on the upper part of the furnace body, and the lower end of an upper seed crystal of the upper pulling mechanism (2) corresponds to the crucible (9) to form the device for improving the temperature of the central part of the crucible.
2. The apparatus as set forth in claim 1, wherein the crucible includes a central portion having a melt temperature increasing portion, and the apparatus further comprises: the crucible (9) ascends and descends or the middle heating source ascends and descends to ensure the distance between the middle heating source and the liquid level of the melt in the crucible (9).
3. The apparatus as set forth in claim 1, wherein the crucible includes: the lower end of the crucible (9) is connected with a lower shaft which can lift up and down.
4. The apparatus as set forth in claim 1, wherein the crucible includes a central portion having a melt temperature increasing portion, and the apparatus further comprises: and a crystal cooling mechanism (15) is arranged above the crucible (9).
5. The apparatus as set forth in claim 1, wherein the crucible includes a central portion having a melt temperature increasing portion, and the apparatus further comprises: and a heat insulation layer (6) is arranged between the outer side wall of the heater (7) and the inner wall of the furnace body.
6. The apparatus as set forth in claim 1, wherein the crucible includes: and a lower heater is arranged below the crucible (9), and heats the bottom of the crucible (9).
7. The apparatus as set forth in claim 1, wherein the crucible includes: the middle heating source is any one of a laser heater (1), a single-pound heating coil (13) or a multi-pound heating coil (14).
8. The apparatus as set forth in claim 7, wherein the crucible includes a central portion having a melt temperature increasing portion, and the apparatus further comprises: when the middle heating source is set as the laser heater (1), the laser beam (16) emitted by the laser heater (1) corresponds to the central part of the crucible (9), and the laser heater (1) is connected with a power supply.
9. The apparatus as set forth in claim 8, wherein the crucible includes: the laser heater (1) is arranged on the outer side of the glass (17), the glass (17) is arranged on the peephole (19), the peephole (19) is arranged on the furnace body, and a laser beam (16) emitted by the laser heater (1) penetrates through the glass (17) and corresponds to the central part of the crucible (9).
10. The apparatus as set forth in claim 9, wherein the crucible includes: a valve (18) is arranged between the glass (17) and the peephole (19).
11. The apparatus as claimed in any one of claims 9 and 10, wherein the crucible includes a central portion having a melt temperature increasing portion, and the apparatus further includes: the glass (17) is quartz glass.
12. The apparatus as set forth in claim 7, wherein the crucible includes a central portion having a melt temperature increasing portion, and the apparatus further comprises: when the middle heating source is a single-smashing heating coil (13), the single-smashing heating coil (13) is arranged above the raw material (8) at the central part of the crucible (9), and the single-smashing heating coil (13) is connected with the coil fixing mechanism (12).
13. The apparatus as set forth in claim 7, wherein the crucible includes a central portion having a melt temperature increasing portion, and the apparatus further comprises: when the middle heating source is a multi-pound heating coil (14), the multi-pound heating coil (14) is arranged above the raw material (8) at the central part of the crucible (9), and the multi-pound heating coil (14) is connected with the coil fixing mechanism (12).
14. The apparatus as claimed in any one of claims 12 and 13, wherein the crucible includes a central portion having a melt temperature increasing portion, and the apparatus further includes: the coil fixing mechanism (12) is connected with the lifting mechanism.
15. The apparatus as claimed in any one of claims 12 and 13, wherein the crucible includes a central portion having a melt temperature increasing portion, and the apparatus further includes: the coil fixing mechanism (12) is connected with a heating electrode at the bottom of the furnace or the heating electrode at the upper part of the furnace cylinder (5) or the heating electrode on the furnace cover (3).
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| CN202211184209.9A CN115613118A (en) | 2022-09-27 | 2022-09-27 | Device for improving temperature of molten liquid at central part of crucible |
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| CN202211184209.9A CN115613118A (en) | 2022-09-27 | 2022-09-27 | Device for improving temperature of molten liquid at central part of crucible |
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| JP2004262723A (en) * | 2003-03-03 | 2004-09-24 | Dowa Mining Co Ltd | Single crystal pulling unit and single crystal pulling method |
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| JP2020066555A (en) * | 2018-10-25 | 2020-04-30 | 住友金属鉱山株式会社 | Apparatus and method for growing single crystal |
| WO2021008159A1 (en) * | 2019-07-12 | 2021-01-21 | 中国电子科技集团公司第二十六研究所 | Coil-movable temperature field structure suitable for czochralski method, and single crystal growth method |
| CN218666392U (en) * | 2022-09-27 | 2023-03-21 | 郭李梁 | Device for improving temperature of molten liquid at central part of crucible |
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| JP2004262723A (en) * | 2003-03-03 | 2004-09-24 | Dowa Mining Co Ltd | Single crystal pulling unit and single crystal pulling method |
| CN105887185A (en) * | 2016-05-30 | 2016-08-24 | 上海超硅半导体有限公司 | Manufacturing method for multiply pulling monocrystalline silicon |
| JP2020066555A (en) * | 2018-10-25 | 2020-04-30 | 住友金属鉱山株式会社 | Apparatus and method for growing single crystal |
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