CN213951412U - Continuous czochralski single crystal growth equipment - Google Patents
Continuous czochralski single crystal growth equipment Download PDFInfo
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- CN213951412U CN213951412U CN202022730358.3U CN202022730358U CN213951412U CN 213951412 U CN213951412 U CN 213951412U CN 202022730358 U CN202022730358 U CN 202022730358U CN 213951412 U CN213951412 U CN 213951412U
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- China
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- insulating layer
- crucible
- heat insulation
- insulation layer
- single crystal
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- 239000013078 crystal Substances 0.000 title claims abstract description 40
- 238000009413 insulation Methods 0.000 claims abstract description 93
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 238000005192 partition Methods 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 239000000725 suspension Substances 0.000 claims description 6
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 3
- 239000004917 carbon fiber Substances 0.000 claims description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000002994 raw material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The equipment for continuous czochralski single crystal growth comprises a crucible, a feeding module, a rotating shaft, a heat insulation module and a heating module, wherein the rotating shaft is provided with an axis and drives the crucible to rotate by taking the axis as the axis; the heat insulation module comprises a first heat insulation layer and a second heat insulation layer, the first heat insulation layer has a first thickness in the axis direction, the second heat insulation layer has a second thickness in the axis direction, the crucible is arranged between the first heat insulation layer and the second heat insulation layer, the first heat insulation layer and the second heat insulation layer are separated by a minimum distance in the axis direction, and the distance ratio of the minimum distance to the first thickness is 1: 0.2 to 1: 0.35, the ratio of the distance between the minimum distance and the second thickness is 1: 0.6 to 1: between 0.75; the heating module is arranged between the crucible and the heat insulation module.
Description
Technical Field
The utility model relates to a crystal pulling device; in particular to a crystal pulling device suitable for a Continuous Czochralski (CCz) method.
Background
It is known that in a typical Czochralski (Czochralski) process, a silicon material is placed in a crucible and melted into liquid silicon at a temperature of about 1416 ℃, a silicon seed crystal having a predetermined crystal orientation is lowered to contact the surface of the liquid silicon, the liquid silicon forms a single crystal having a predetermined crystal orientation with the silicon seed crystal on the silicon seed crystal under proper temperature control, and then the silicon seed crystal and the crucible are rotated and slowly pulled to form a silicon ingot below the silicon seed crystal.
In the conventional CZ method, in which only one crucible is used at a time and only one ingot is produced at a time, in order to improve the above-mentioned problems, the industry has begun to produce ingots by a Continuous czochralski (CCz) method, in which silicon is continuously or periodically replenished into the crucible during the pulling of a single crystal, whereby several ingots can be pulled within a life cycle allowed for a single crucible.
In the above-mentioned manufacturing process of the single crystal silicon, a heater is required to provide a temperature required for melting the silicon material, and when heat is dissipated to the outside from the continuous czochralski crystal growing apparatus, in order to maintain a sufficiently high temperature, the power of the heater needs to be increased, thereby causing a large amount of waste of heat energy, and therefore, how to improve the dissipation of heat from the continuous czochralski crystal growing apparatus to the outside is a problem to be solved urgently.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present invention is directed to a continuous czochralski crystal growing apparatus having a heat insulating module to improve the problem of heat dissipation from the continuous czochralski crystal growing apparatus to the outside.
In order to achieve the above object, the present invention provides a continuous czochralski single crystal growing apparatus, which comprises a crucible, a feeding module, a rotating shaft, a heat insulation module and a heating module, wherein the crucible has a partition wall, the partition wall divides the inner accommodating space of the crucible into a feeding area and a growing area, and the partition wall has at least one through hole for communicating the feeding area and the growing area; the feed module is configured to provide a solid feedstock to the feed zone; the rotating shaft is provided with an axis and drives the crucible to rotate by taking the axis as an axis; the heat insulation module comprises a first heat insulation layer and a second heat insulation layer, the first heat insulation layer is provided with a first thickness in the axis direction, the second heat insulation layer is provided with a second thickness in the axis direction, the crucible is arranged between the first heat insulation layer and the second heat insulation layer, the first heat insulation layer and the second heat insulation layer are separated by a minimum distance in the axis direction, and the distance ratio of the minimum distance to the first thickness is 1: 0.2 to 0.35, the ratio of the distance between the minimum distance and the second thickness being 1: 0.6 to 1: between 0.75; the heating module is arranged between the crucible and the heat insulation module.
The continuous czochralski single crystal growing apparatus comprises an opening through which a suspension wire passes, the first thermal insulation layer having a radial length, the ratio of the caliber of the opening to the length of the radial length being 1: 1.5 to 1: 2.
The first heat insulation layer is provided with a feeding channel, the feeding channel penetrates through the first heat insulation layer, and the solid raw materials provided by the feeding module enter the feeding area through the feeding channel.
Wherein a ratio of the first thickness to the second thickness is 1: 1.6 to 1: 2.5.
Wherein the crucible has a maximum height in the axial direction, a ratio of the maximum height to the minimum distance being 1: 1.5 to 1: 2.3.
Wherein the thermal insulation module comprises a third thermal insulation layer, and the third thermal insulation layer is arranged at a position surrounding the outer side wall of the crucible.
Wherein the top of the third thermal-insulating layer is connected with the first thermal-insulating layer, and the bottom of the third thermal-insulating layer is connected with the second thermal-insulating layer.
Wherein the third heat insulation layer is made of graphite.
Wherein the third thermal insulating layer is a graphite blanket.
The utility model has the effects of, the heating module set up in the crucible with between the heat insulating module, and pass through first insulating layer the second insulating layer reaches the setting of third insulating layer can effective separation heat energy loss extremely continuous czochralski crystal growth equipment outside, the power that enables the heater descends, and then reaches reduction in production cost's efficiency.
Drawings
FIG. 1 is a schematic view of a continuous Czochralski single crystal growing apparatus according to a preferred embodiment of the present invention.
FIG. 2 is a schematic view of the feed materials to the continuous Czochralski single crystal growing apparatus of the preferred embodiment.
Description of the reference numerals
[ the utility model ]
Continuous Czochralski single crystal growth apparatus
10
20
A feed area 202
221
A feed module
A rotating shaft
Axis line
A thermal insulation module
First insulating layer 521
Second thermal isolation layer 541
56.. third insulating layer
Heating module
Suspension wire
S. solid raw material
A first thickness
A second thickness
Minimum distance d1
D2.. maximum height
Radial length d3
D4.. caliber
Dd.. difference
T3
Detailed Description
In order to explain the present invention more clearly, the following detailed description will be given with reference to the accompanying drawings. Referring to fig. 1 to 2, a continuous czochralski single crystal growing apparatus 1 according to a preferred embodiment of the present invention comprises a chamber 10, a crucible 20, a feeding module 30, a rotating shaft 40, a heat insulation module 50 and a heating module 60, wherein the crucible 20, the rotating shaft 40, the heat insulation module 50 and the heating module 60 are all disposed in the chamber 10.
The cavity 10 is in a cylindrical shape, the heat insulation module 50 includes a first heat insulation layer 52, a second heat insulation layer 54 and a third heat insulation layer 56, the second heat insulation layer 54 is filled at the bottom of the cavity, the first heat insulation layer 52 is disposed at the top of the cavity 10, the third heat insulation layer 56 is disposed between the first heat insulation layer 52 and the second heat insulation layer 54, the third heat insulation layer 56 is disposed around the inner wall of the cavity 10, the crucible 20 is disposed between the first heat insulation layer 52 and the second heat insulation layer 54, the crucible 20 is disposed below the first heat insulation layer 52 and above the second heat insulation layer 54, and the outer side wall of the crucible 20 is surrounded by the third heat insulation layer 56.
The heating module 60 is disposed between the crucible 20 and the heat insulation module 50, the heating module 60 is used for providing heat energy required for melting the raw material in the crucible 20, so that the temperature of the silicon raw material in a liquid state is about 1416 ℃, in the embodiment, the heating module 60 comprises a first heater 62 and a second heater 64, the first heater 62 is disposed around the outer sidewall of the crucible 20, the first heater 62 is disposed between the crucible 20 and the third heat insulation layer 56, the second heater 64 is disposed near the bottom of the crucible 20, and the second heater 64 is disposed between the crucible 20 and the second heat insulation layer 54, that is, the first heat insulation layer 52, the second heat insulation layer 54 and the third heat insulation layer 56 together form a heat insulation shield, effectively blocking the heat energy provided by the heating module 60 from escaping to the outside of the chamber 10.
In this embodiment, the crucible 20 is a quartz crucible or a graphite crucible containing a quartz lining, the crucible 20 has a partition wall 22, the partition wall 22 divides the internal space of the crucible into a feeding area 201 and a growth area 202, the partition wall 22 has at least one through hole 221 communicating the feeding area 201 and the growth area 202, the number of the at least one through hole 221 may be one or more, the first thermal insulation layer 52 has a feeding channel 521, the feeding channel 521 penetrates through the first thermal insulation layer 52, the feeding module 30 is connected to the feeding channel 521, and the solid raw material S provided by the feeding module 30 enters the feeding area 201 through the feeding channel 521, so that the solid raw material S enters the feeding area 201 through the feeding channel 521 and is heated and melted into a liquid by the heating module 60, flows from the at least one through hole 221 into the growth region 202, and the at least one through hole 221 can restrict the unmelted solid raw material S from entering the growth region. In practice, the feeding module 30 can control the feeding amount or the feeding rate, and continuously or periodically replenishes silicon solid raw material into the feeding region 201 of the crucible 20 during the single crystal pulling process of the Continuous Czochralski (CCz) method, thereby completing the pulling of several crystal rods within the allowable life cycle of a single crucible.
The rotating shaft 40 is connected to the bottom of the crucible 20, the rotating shaft has an axis 401, the rotating shaft 40 can controllably drive the crucible 20 to rotate around the axis 401 and control the rotating speed of the crucible 20, the first thermal insulation layer 52 has a first thickness T1 in the direction of the axis 401, the second thermal insulation layer 54 has a second thickness T2 in the direction of the axis 401, the crucible 20 is disposed between the first thermal insulation layer 52 and the second thermal insulation layer 54, the first thermal insulation layer 52 and the second thermal insulation layer 54 are separated by a minimum distance D1 in the direction of the axis 401, and the distance ratio of the minimum distance D1 to the first thickness T1 is 1: 0.2 to 1: 0.35, the ratio of the distance D1 to the thickness T2 is 1: 0.6 to 1: 0.75, preferably the ratio between the first thickness T1 and the second thickness T2 is 1: 1.6 to 1: 2.5, the crucible 20 has a maximum height D2 in the direction of the axis 401, and the length ratio of the maximum height D2 to the minimum distance D1 is 1: 1.5 to 1: 2.3, the first and second thermal insulation layers 52 and 54 can provide good shielding for the heating module 60 disposed between the first and second thermal insulation layers 52 and 54, so as to prevent the heat generated by the heating module 60 from escaping to the outside of the chamber 10.
The continuous czochralski single crystal growing apparatus 1 further comprises a suspension wire 70, the suspension wire 70 passing through an opening 522 of the first thermal insulation layer 52, the suspension wire 70 being connected with a seed crystal for lowering the seed crystal to the surface of the growth region 202 containing liquid silicon and slowly raising the seed crystal with an appropriate pull-off rate to continue the crystallization process, the first thermal insulation layer 52 having a radial length D3, the opening 522 having a length ratio of caliber D4 to the radial length D3 of 1: 1.5 to 1: 2, the ratio of the caliber D4 of the opening 522 to the radial length D3 is limited to effectively prevent the heat generated by the heating module 60 from escaping from the opening 522 to the outside of the chamber 10.
In this embodiment, the first insulating layer 52 and the second insulating layer 54 are made of carbon fiber, the third insulating layer 56 is made of graphite, preferably, the third insulating layer 56 is made of graphite blanket, and is made of graphite or carbon fiber with heat insulation and heat resistance, so as to enhance the heat insulation effect of the first insulating layer 52, the second insulating layer 54 and the third insulating layer 56, and it should be noted that in this embodiment, the top of the third insulating layer 56 is connected to the first insulating layer 52, and the bottom of the third insulating layer 56 is connected to the second insulating layer 54, so as to enhance the close fit among the first insulating layer 52, the second insulating layer 54 and the third insulating layer 56, and reduce the heat energy dissipation through the gap among the first insulating layer 52, the second insulating layer 54 and the third insulating layer 56, in addition, in the present embodiment, the second thermal insulation layer 54 includes an upper thermal insulation layer 541 and a lower thermal insulation layer 542, the lower thermal insulation layer 542 is disposed at the bottom of the cavity 10, the upper thermal insulation layer 541 is disposed at the center of the top of the lower thermal insulation layer 542, the upper thermal insulation layer 541 and the lower thermal insulation layer 542 are both cylindrical, the radial length of the upper thermal insulation layer 541 is smaller than the radial length of the lower thermal insulation layer 542, the third thermal insulation layer 56 has a third thickness T3, which is the difference Dd between the radial length of the upper thermal insulation layer 541 and the radial length of the lower thermal insulation layer 542, the bottom of the third thermal insulation layer 56 is connected to the top of the lower thermal insulation layer 542 and surrounds the outer periphery of the upper thermal insulation layer 541, in other embodiments, the upper thermal insulation layer 541 and the lower thermal insulation layer 542 may be integrally formed, and the above is not limited.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications to the application of the present invention and the claims should be considered to be included in the scope of the present invention.
Claims (9)
1. A continuous czochralski single crystal growing apparatus, comprising:
the crucible is provided with a partition wall, the internal accommodating space of the crucible is divided into a feeding area and a growth area by the partition wall, and the partition wall is provided with at least one through hole which is communicated with the feeding area and the growth area;
a feed module for providing solid feedstock to the feed zone;
the rotating shaft is provided with an axis and drives the crucible to rotate by taking the axis as an axis;
an insulating module comprising a first insulating layer and a second insulating layer, the first insulating layer having a first thickness in the axial direction, the second insulating layer having a second thickness in the axial direction, the crucible being disposed between the first insulating layer and the second insulating layer, the first insulating layer and the second insulating layer being spaced apart by a minimum distance in the axial direction, the ratio of the distance between the minimum distance and the first thickness being 1: 0.2 to 1: 0.35, the ratio of the distance between the minimum distance and the second thickness is 1: 0.6 to 1: between 0.75; and
the heating module is arranged between the crucible and the heat insulation module;
the crucible is arranged below the first heat insulation layer and above the second heat insulation layer, and the first heat insulation layer and the second heat insulation layer are made of carbon fiber materials.
2. The continuous czochralski single crystal growing apparatus of claim 1, comprising an opening through which a suspension wire passes, the first thermally insulating layer having a radial length, the ratio of the caliber of the opening to the length of the radial length being 1: 1.5 to 1: 2.
3. The continuous czochralski single crystal growing apparatus of claim 1, wherein the first thermally insulating layer has a feed passage extending therethrough, the solid feedstock provided by the feed module passing through the feed passage into the feed zone.
4. The continuous czochralski single crystal growing apparatus of claim 1, wherein a ratio of the first thickness to the second thickness is 1: 1.6 to 1: 2.5.
5. The continuous czochralski single crystal growing apparatus of claim 1, wherein the crucible has a maximum height in the axial direction, a ratio of the maximum height to the minimum distance being 1: 1.5 to 1: 2.3.
6. The continuous czochralski single crystal growing apparatus of claim 1, wherein the thermal insulation module comprises a third layer of thermal insulation disposed about the outer sidewall of the crucible.
7. The continuous czochralski single crystal growing apparatus of claim 6, wherein a top portion of the third thermal insulating layer is connected to the first thermal insulating layer and a bottom portion of the third thermal insulating layer is connected to the second thermal insulating layer.
8. The continuous Czochralski single crystal growing apparatus of claim 6, wherein the third thermally insulating layer is formed of graphite.
9. The continuous czochralski single crystal growing apparatus of claim 8, wherein the third thermally insulating layer is a graphite blanket.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108145294A TWI732376B (en) | 2019-12-11 | 2019-12-11 | Growth apparatus for continuous czochralski |
| TW108145294 | 2019-12-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213951412U true CN213951412U (en) | 2021-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022730358.3U Active CN213951412U (en) | 2019-12-11 | 2020-11-23 | Continuous czochralski single crystal growth equipment |
| CN202011321051.6A Pending CN112941619A (en) | 2019-12-11 | 2020-11-23 | Continuous czochralski single crystal growth equipment |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011321051.6A Pending CN112941619A (en) | 2019-12-11 | 2020-11-23 | Continuous czochralski single crystal growth equipment |
Country Status (2)
| Country | Link |
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| CN (2) | CN213951412U (en) |
| TW (1) | TWI732376B (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5934218B2 (en) * | 2010-09-03 | 2016-06-15 | ジーテイーエイテイー・アイピー・ホールデイング・エルエルシーＧＴＡＴ ＩＰ Ｈｏｌｄｉｎｇ ＬＬＣ | Single crystal of silicon doped with gallium, indium or aluminum |
| US20140144371A1 (en) * | 2012-11-29 | 2014-05-29 | Solaicx, Inc. | Heat Shield For Improved Continuous Czochralski Process |
| CN109023508B (en) * | 2018-10-23 | 2024-02-13 | 宁夏旭樱新能源科技有限公司 | Novel continuous feeding device for single crystal furnace |
-
2019
- 2019-12-11 TW TW108145294A patent/TWI732376B/en active
-
2020
- 2020-11-23 CN CN202022730358.3U patent/CN213951412U/en active Active
- 2020-11-23 CN CN202011321051.6A patent/CN112941619A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202122645A (en) | 2021-06-16 |
| TWI732376B (en) | 2021-07-01 |
| CN112941619A (en) | 2021-06-11 |
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