CN218203155U - Single crystal furnace - Google Patents
Single crystal furnace Download PDFInfo
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- CN218203155U CN218203155U CN202221982712.4U CN202221982712U CN218203155U CN 218203155 U CN218203155 U CN 218203155U CN 202221982712 U CN202221982712 U CN 202221982712U CN 218203155 U CN218203155 U CN 218203155U
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- quartz tube
- single crystal
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Abstract
The utility model provides a single crystal furnace. When the furnace body heats and melts the solution in the quartz tube, the bottom of the quartz tube is connected with the cooling system through the graphite supporting component, so that the heat at the bottom of the quartz tube can be transferred to the cooling system through the graphite supporting component, the temperature at the bottom of the quartz tube is lower than the temperature at the upper part of the quartz tube, and when the temperature difference between the bottom of the quartz tube and the temperature at the upper part of the quartz tube reaches a certain value, the solution in the quartz tube can generate a solid-liquid interface.
Description
Technical Field
The utility model relates to the field of semiconductor material manufacturing, in particular to a single crystal furnace.
Background
The single crystal furnace is core equipment for preparing crystals by a Vertical Gradient Freezing (VGF) technology, and mainly comprises a furnace body, a lifting device, a crucible, a heating system and a cooling system, wherein the cooling system can take away heat from a solid-liquid interface of a solution after the heat passes through the crystals, so that the solid-liquid interface has enough temperature Gradient and reaches the kinetic energy of continuous growth of the crystals.
However, when the existing single crystal furnace is adopted to prepare the crystal, the processes of seeding, shouldering, equal-diameter growth, cooling and the like are needed, but the processes of seeding, shouldering, equal-diameter growth, cooling and the like are adopted to prepare the crystal, so that the growth cycle of the crystal is long, twin defects are easily generated in the crystal during the shouldering and shouldering processes, and the growth yield of the crystal is low.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiment of the utility model provides a single crystal growing furnace to solve the problem of crystal growth cycle length when current single crystal growing furnace preparation crystal, and shoulder and receive the shoulder in-process, the inside twin crystal defect that easily produces of crystal, make the problem that crystal growth yield is low.
In order to achieve the above object, the embodiment of the present invention provides the following technical solutions:
a single crystal furnace comprising: the device comprises a furnace body, a quartz tube, a crucible, a graphite supporting assembly and a cooling system;
the cooling system is arranged at the bottom of the furnace body;
the graphite support assembly is arranged on the cooling system;
the quartz tube is vertically arranged on the graphite support assembly;
the quartz tube is used for containing a solution;
the crucible is arranged in the quartz tube and is positioned above the solution.
Preferably, the graphite support assembly includes: a graphite rod and a graphite supporting plate;
the area of the upper surface of the graphite supporting plate is larger than the area of the end part of the graphite rod;
the graphite rod is vertically fixed on the cooling system;
the graphite supporting plate is fixed at the upper end of the graphite rod;
the quartz tube is fixed on the graphite supporting plate.
Preferably, the graphite rod is cylindrical in shape.
Preferably, the bottom of the crucible is flat.
Preferably, the bottom of the quartz tube is flat.
Preferably, the cooling system is a liquid cooling system.
Preferably, the liquid cooling system includes: the water pump comprises a base, a water tank, a water inlet pipe, a water outlet pipe and a water pump;
the graphite support assembly is arranged on the base;
the base is provided with a cooling water path;
one end of the water inlet pipe is arranged in the water tank, and the other end of the water inlet pipe is communicated with a water inlet of the water pump;
the water outlet of the water pump is communicated with the water inlet of the cooling water channel;
and the water outlet of the cooling water path is communicated with the water tank through the water outlet pipe.
Preferably, a plurality of cooling water paths are arranged in the base.
Preferably, the liquid cooling system further includes: and the fan is arranged on the water outlet pipe.
Based on the foregoing the utility model provides a pair of single crystal growing furnace, set up cooling system in the bottom of furnace body, and set up graphite supporting component at cooling system, the quartz capsule sets up at graphite supporting component, and hold the solution (like gallium arsenide) in the quartz capsule, the crucible sets up in the quartz capsule, and be located the solution top, can heat when melting at the furnace body to the solution in the quartz capsule, because the quartz capsule bottom links to each other with cooling system through graphite supporting component, make the heat of quartz capsule bottom can transmit to cooling system through graphite supporting component, and then make the temperature of quartz capsule bottom be less than the temperature on quartz capsule upper portion, and the temperature difference on quartz capsule bottom and quartz capsule upper portion reaches a timing, solid-liquid interface then can appear in the quartz capsule, because graphite supporting component has good heat conductivility, therefore, can take away the heat from the solution through graphite supporting component and cooling system, and then ensured the condensation temperature gradient of the solution in the quartz capsule, reach the kinetic energy that lasts the growth. And because the graphite assembly has excellent heat-conducting property, when the crystal is prepared, the crystal can be prepared by processes of introduction, equal-diameter growth, cooling and the like, and compared with the preparation process of the existing single crystal furnace, the steps of shouldering and shouldering are reduced, so that the defect of twin crystal generated in the shouldering and shouldering processes can be avoided compared with the crystal preparation process of the existing single crystal furnace, and the yield and the quality of crystal preparation can be effectively improved through the single crystal furnace.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a single crystal furnace according to an embodiment of the present invention.
Wherein, the furnace body 1, the quartz capsule 2, the crucible 3, the graphite rod 4, the graphite layer board 5, the water pump 6, the inlet tube 7, the outlet pipe 8, the base 9, the water tank 10.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The embodiment of the utility model provides a single crystal growing furnace, see fig. 1, fig. 1 is single crystal growing furnace's schematic structure drawing, single crystal growing furnace, include: the device comprises a furnace body 1, a quartz tube 2, a crucible 3, a graphite supporting component and a cooling system;
the cooling system is arranged at the bottom of the furnace body 1;
the graphite support assembly is arranged on the cooling system;
the quartz tube 2 is vertically arranged on the graphite support component;
the quartz tube 2 is used for containing a solution;
the crucible 3 is arranged in the quartz tube 2 and is positioned above the melt.
It should be noted that the graphite support assembly is mainly made of graphite, which is an allotrope of carbon, is a gray black and opaque solid, has stable chemical properties, is corrosion resistant, and is not easy to react with acid, alkali and other medicaments. The natural graphite is from graphite mineral deposits, and can also be made into artificial graphite by using petroleum coke, pitch coke and the like as raw materials and processing the raw materials through a series of working procedures. Graphite also has high temperature resistance and good heat conductivity, therefore, a cooling system is arranged at the bottom of the furnace body 1, a graphite supporting component is arranged at the cooling system, the quartz tube 2 is arranged at the graphite supporting component, and a solution (such as gallium arsenide) is contained in the quartz tube 2, a crucible 3 is arranged in the quartz tube 2 and is positioned above the solution, when the furnace body 1 heats and melts the solution in the quartz tube 2, because the bottom of the quartz tube 2 is connected with the cooling system through the graphite supporting component, the heat at the bottom of the quartz tube 2 can be transmitted to the cooling system through the graphite supporting component, and then the temperature at the bottom of the quartz tube 2 is lower than the temperature at the upper part of the quartz tube 2, when the temperature difference between the bottom of the quartz tube 2 and the temperature at the upper part of the quartz tube 2 reaches a certain value, a solid-liquid interface can appear in the solution in the quartz tube 2, because the graphite supporting component has good heat conductivity, therefore, the heat can be taken away from the solution through the graphite supporting component and the cooling system, and the condensation temperature gradient of the solution in the quartz tube 2 can be ensured, and the kinetic energy of the continuous growth of crystals can be achieved.
It should be noted that, aiming at the single crystal furnace provided above, since the graphite component has excellent heat conductivity, when the crystal is prepared, the crystal can be prepared by the processes of introduction, equal-diameter growth, cooling and the like, and compared with the preparation process of the existing single crystal furnace, the steps of shouldering and shouldering are reduced, therefore, compared with the crystal preparation process of the existing single crystal furnace, the single crystal furnace can avoid the twinning defect generated in the shouldering and shouldering processes, and therefore, the yield and quality of crystal preparation can be effectively improved.
Specifically, graphite supporting component includes: a graphite rod 4 and a graphite supporting plate 5;
the area of the upper surface of the graphite supporting plate 5 is larger than that of the end part of the graphite rod 4;
the graphite rod 4 is vertically fixed on the cooling system;
the graphite supporting plate 5 is fixed at the upper end of the graphite rod 4;
the quartz tube 2 is disposed on the graphite support plate 5.
The graphite rod 4 is vertically fixed to the cooling system; the graphite supporting plate 5 is fixed at the upper end of the graphite rod 4; can place quartz capsule 2 when graphite layer board 5 at the staff, because the upper surface area of graphite layer board 5 is greater than the tip area of graphite rod 4, consequently, the staff places quartz capsule 2 at graphite layer board 5 more easily, can effectively promote staff's work efficiency.
Preferably, the graphite supporting plate 5 is provided with a groove for placing the quartz tube 2.
It should be noted that, the groove for placing the quartz tube 2 is formed in the graphite supporting plate 5, so that the quartz tube 2 can be conveniently placed by a worker, and the quartz tube 2 can be prevented from tilting.
Further, the graphite rod 4 is cylindrical in shape.
The shape of the graphite rod 4 may be cylindrical or polygonal, and therefore, the shape of the graphite rod 4 is not limited to cylindrical.
Specifically, the bottom of the crucible 3 is flat.
The bottom of the crucible 3 may be a flat bottom or an arc shape, and those skilled in the art can select the bottom according to the requirement.
Further, the bottom of the quartz tube 2 is flat.
It should be noted that the bottom of the quartz tube 2 is set to be flat, so that the quartz tube 2 can be conveniently vertically placed on the graphite supporting component, the contact area with the graphite supporting component can be increased, and the heat energy transfer efficiency can be effectively improved.
Specifically, the cooling system is a liquid cooling system.
It should be noted that the cooling suction can be a liquid cooling system or an air cooling system, and those skilled in the art can select the cooling suction as required.
Specifically, the liquid cooling system includes: a base 9, a water tank 10, a water inlet pipe 7, a water outlet pipe 8 and a water pump 6;
the graphite support assembly is arranged on the base 9;
the base 9 is provided with a cooling water path;
one end of the water inlet pipe 7 is arranged in the water tank 10, and the other end of the water inlet pipe is communicated with the water inlet of the water pump 6;
the water outlet of the water pump 6 is communicated with the water inlet of the cooling water path;
the water outlet of the cooling water path is communicated with a water tank 10 through a water outlet pipe 8.
It should be noted that, the water pump 6 carries the coolant liquid in the water tank 10 to the base 9 through the inlet tube 7, gets into outlet pipe 8 after the coolant liquid flows through the cooling water route of base 9, and the heat of base 9 can be taken away to the coolant liquid, and then realizes the cooling to the cooling of base 9, and with outlet pipe 8 in water tank 10 UNICOM, can effectively avoid the coolant liquid extravagant.
Specifically, a plurality of cooling water paths are arranged in the base 9.
It should be noted that, by arranging a plurality of cooling water paths in the base 9, the amount of cooling liquid flowing through the base 9 in unit time is increased, and then more heat of the base 9 can be taken away, so that the temperature of the base 9 is in a preset interval, and further, the condensation temperature gradient of the solution in the quartz tube 2 can be ensured.
Further, the liquid cooling system still includes: and the fan is used for cooling the water outlet pipe 8.
It should be noted that, by providing the fan for cooling the water outlet pipe 8, the temperature of the cooling liquid entering the water tank 10 can be reduced, and it is avoided that the temperature of the cooling liquid in the water tank 10 is too high to realize heat dissipation of the graphite support assembly.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A single crystal furnace, comprising: the device comprises a furnace body, a quartz tube, a crucible, a graphite supporting assembly and a cooling system;
the cooling system is arranged at the bottom of the furnace body;
the graphite support assembly is arranged on the cooling system;
the quartz tube is vertically arranged on the graphite support assembly;
the quartz tube is used for containing a solution;
the crucible is arranged in the quartz tube and is positioned above the solution.
2. The single crystal furnace of claim 1, wherein the graphite support assembly comprises: a graphite rod and a graphite supporting plate;
the area of the upper surface of the graphite supporting plate is larger than the area of the end part of the graphite rod;
the graphite rod is vertically fixed on the cooling system;
the graphite supporting plate is fixed at the upper end of the graphite rod;
the quartz tube is fixed on the graphite supporting plate.
3. The single crystal furnace of claim 2, wherein the graphite rod is cylindrical in shape.
4. The single crystal furnace of claim 1, wherein the bottom of the crucible is flat bottom.
5. The single crystal furnace of claim 1, wherein the bottom of the quartz tube is flat bottom.
6. The single crystal furnace of claim 1, wherein the cooling system is a liquid cooling system.
7. The single crystal furnace of claim 6, wherein the liquid cooling system comprises: the water pump comprises a base, a water tank, a water inlet pipe, a water outlet pipe and a water pump;
the graphite supporting assembly is arranged on the base;
the base is provided with a cooling water path;
one end of the water inlet pipe is arranged in the water tank, and the other end of the water inlet pipe is communicated with a water inlet of the water pump;
the water outlet of the water pump is communicated with the water inlet of the cooling water path;
and the water outlet of the cooling water channel is communicated with the water tank through the water outlet pipe.
8. The single crystal furnace of claim 7, wherein the base has a plurality of cooling water channels formed therein.
9. The single crystal furnace of claim 7, wherein the liquid cooling system further comprises: and the fan is arranged on the water outlet pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221982712.4U CN218203155U (en) | 2022-07-29 | 2022-07-29 | Single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221982712.4U CN218203155U (en) | 2022-07-29 | 2022-07-29 | Single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218203155U true CN218203155U (en) | 2023-01-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN202221982712.4U Active CN218203155U (en) | 2022-07-29 | 2022-07-29 | Single crystal furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN218203155U (en) |
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2022
- 2022-07-29 CN CN202221982712.4U patent/CN218203155U/en active Active
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