CN217789984U - High-voltage-resistant aluminum-based copper-clad plate - Google Patents
High-voltage-resistant aluminum-based copper-clad plate Download PDFInfo
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- CN217789984U CN217789984U CN202221010335.8U CN202221010335U CN217789984U CN 217789984 U CN217789984 U CN 217789984U CN 202221010335 U CN202221010335 U CN 202221010335U CN 217789984 U CN217789984 U CN 217789984U
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Abstract
The utility model relates to a high withstand voltage's aluminium base copper-clad plate in copper-clad plate technical field, which comprises a substrate, the base plate includes the aluminium sheet layer, insulating layer and copper foil layer, the aluminium sheet layer is located the middle part of base plate, the insulating layer comprises semiconductor film, semiconductor film's inside includes N district and P district, form one-way PN junction that switches on between N district and the P district, semiconductor film's N district and copper foil layer are laminated, semiconductor film's P district and aluminium sheet layer laminate, make copper foil layer circular telegram make with the inside reverse PN junction that forms of semiconductor film, the withstand voltage effect between aluminium sheet layer and the copper foil layer has been improved, make aluminium base copper-clad plate effectual switch on and connect electronic components on integrated circuit board, integrated circuit board's control accuracy is improved, can be according to different integrated circuit board's voltage requirement simultaneously, change semiconductor film's withstand voltage thickness, make aluminium base copper-clad plate reach the required requirement of integrated circuit board, and simple structure simultaneously, be fit for promoting on a large scale.
Description
Technical Field
The utility model relates to a copper-clad plate technical field specifically is high withstand voltage aluminium base copper-clad plate.
Background
An aluminum-based copper clad laminate, i.e., an aluminum substrate, is one of raw materials, and is a plate-shaped material prepared by using electronic glass fiber cloth or other reinforcing materials, soaking resin, single resin and the like as an insulating bonding layer, coating copper foil on one surface or two surfaces of the insulating bonding layer and performing hot pressing, and is called a copper-clad laminate aluminum substrate, which is called an aluminum-based copper clad laminate for short.
Because the power of the existing electrical equipment is increased more and more, the withstand voltage grade of the integrated circuit board is also improved, the aluminum-based copper-clad plate is used as a conducting body of each electronic component of the integrated circuit board, the withstand voltage grade of the aluminum-based copper-clad plate needs to be improved, the insulation between the aluminum plate layer and the copper foil layer of the existing aluminum-based copper-clad plate is generally insulated by high-heat-conducting glue, and the withstand voltage grade has a certain limit. Therefore, in view of these current situations, there is an urgent need to develop a high voltage-resistant aluminum-based copper-clad plate to meet the needs of practical use.
Disclosure of Invention
The utility model aims at solving the above defect, providing high withstand voltage aluminium base copper-clad plate.
In order to solve the technical problem, the utility model discloses a following technical scheme:
high withstand voltage's aluminium base copper-clad plate, which comprises a substrate, the base plate includes the aluminium sheet layer, insulating layer and copper foil layer, the aluminium sheet layer is located the middle part of base plate, the insulating layer includes insulating layer and lower insulating layer, go up insulating layer and lower insulating layer symmetry respectively and locate the top face and the bottom face of aluminium sheet layer, the copper foil layer includes copper foil layer and lower copper foil layer, it is located the surface of insulating layer and the surface of lower insulating layer respectively to go up copper foil layer and lower copper foil layer, the insulating layer comprises semiconductor film, semiconductor film's inside includes N district and P district, form one-way PN junction that switches on between N district and the P district, semiconductor film's N district laminates with the copper foil layer, semiconductor film's P district laminates with the aluminium sheet layer, make the copper foil layer circular telegram make with the inside reverse PN junction that forms of semiconductor film.
In the above description, the substrate preferably has a five-layer structure, and the substrate preferably has a double-sided copper-clad structure.
In the above description, the thickness of the semiconductor thin film is preferably 0.001 to 0.003mm.
In the above description, the thickness of the aluminum plate layer is preferably 0.2 to 3.0mm.
In the above description, the copper foil layer is preferably made of an electrolytic copper foil.
In the above description, preferably, the aluminum plate layer, the insulating layer, and the copper foil layer are bonded and laminated to each other as a whole.
The utility model discloses produced beneficial effect as follows:
the utility model provides a high withstand voltage's aluminium base copper-clad plate accessible semiconductor film's one-way characteristic that switches on has improved the withstand voltage effect of insulating between aluminium sheet layer and the copper foil layer, make aluminium base copper-clad plate effectual switch on and be connected electronic components on integrated circuit board, improve integrated circuit board's control accuracy, can be according to the voltage requirement of the integrated circuit board of difference simultaneously, change semiconductor film's withstand voltage thickness, make aluminium base copper-clad plate reach the required requirement of integrated circuit board, and its simple structure is fit for promoting on a large scale simultaneously.
Drawings
FIG. 1 is a schematic perspective view of the present embodiment;
FIG. 2 is a schematic view of the internal structure of the present embodiment;
in the figure: 1 is an upper insulating layer, 2 is a lower insulating layer, 3 is an aluminum plate layer, 4 is an upper copper foil layer, 5 is a lower copper foil layer, and 6 is a substrate.
Detailed Description
In order to facilitate understanding of those skilled in the art, the present invention will be further described with reference to the following examples and drawings, which are not intended to limit the present invention. The present invention will be described in detail with reference to the accompanying drawings.
Please refer to fig. 1-2, which illustrate a high withstand voltage aluminum-based copper-clad laminate specifically implemented, including a substrate 6, the substrate 6 includes an aluminum plate layer 3, an insulating layer and a copper foil layer, the aluminum plate layer 3 is located in the middle of the substrate 6, the insulating layer includes an upper insulating layer 1 and a lower insulating layer 2, the upper insulating layer 1 and the lower insulating layer 2 are respectively and symmetrically located on the top end surface and the bottom end surface of the aluminum plate layer 3, the copper foil layer includes an upper copper foil layer 4 and a lower copper foil layer 5, the upper copper foil layer 4 and the lower copper foil layer 5 are respectively located on the surface of the upper insulating layer 1 and the surface of the lower insulating layer 2, the insulating layer is composed of a semiconductor film, the semiconductor film includes an N region and a P region, a unidirectional PN junction is formed between the N region and the P region, the N region of the semiconductor film is bonded to the copper foil layer, the P region of the semiconductor film is bonded to the aluminum plate layer 3, and the copper foil layer is electrically connected to form a reverse PN junction inside the semiconductor film.
The substrate 6 is of a five-layer structure, the substrate 6 is of a double-sided copper-clad structure, the thickness of the semiconductor film is 0.002mm, and the thickness of the aluminum plate layer 3 is 1.5mm.
The copper foil layer is composed of electrolytic copper foil, and the aluminum plate layer 3, the insulating layer and the copper foil layer are bonded and pressed into a whole.
The above description is only for the preferred embodiment of the present invention, and the present invention is not limited to the above description, and although the present invention is disclosed in the preferred embodiment, it is not limited to the above description, and any person skilled in the art can make some changes or modifications to equivalent embodiments without departing from the scope of the present invention, but all the technical solutions of the present invention are within the scope of the present invention.
Claims (6)
1. High withstand voltage's aluminium base copper-clad plate, including the base plate, the base plate includes aluminium sheet layer, insulating layer and copper foil layer, its characterized in that: the utility model discloses a semiconductor device, including base plate, aluminum plate layer, copper foil layer, insulating layer, upper insulating layer and lower insulating layer, the top face and the bottom face of aluminum plate layer are located to upper insulating layer and lower insulating layer symmetry respectively, the copper foil layer includes copper foil layer and lower copper foil layer, it is located the surface of upper insulating layer and the surface of lower insulating layer respectively to go up copper foil layer and lower copper foil layer, the insulating layer comprises the semiconductor film, the inside of semiconductor film includes N district and P district, form one-way PN junction that switches on between N district and the P district, the N district and the copper foil layer of semiconductor film laminate, the P district and the aluminum plate layer of semiconductor film laminate, make copper foil layer circular telegram make and the inside reverse PN junction that forms of semiconductor film.
2. The high-voltage-resistant aluminum-based copper-clad plate according to claim 1, characterized in that: the substrate is of a five-layer structure, and the substrate is of a double-sided copper-clad structure.
3. The high-voltage-resistant aluminum-based copper-clad plate according to claim 1, characterized in that: the thickness of the semiconductor film is 0.001-0.003mm.
4. The high-voltage-resistant aluminum-based copper-clad plate according to claim 1, characterized in that: the thickness of the aluminum plate layer is 0.2-3.0mm.
5. The high-voltage-resistant aluminum-based copper-clad plate according to claim 1, characterized in that: the copper foil layer is composed of an electrolytic copper foil.
6. The high-voltage-resistant aluminum-based copper-clad plate according to claim 1, characterized in that: the aluminum plate layer, the insulating layer and the copper foil layer are glued and pressed into a whole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221010335.8U CN217789984U (en) | 2022-04-28 | 2022-04-28 | High-voltage-resistant aluminum-based copper-clad plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221010335.8U CN217789984U (en) | 2022-04-28 | 2022-04-28 | High-voltage-resistant aluminum-based copper-clad plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217789984U true CN217789984U (en) | 2022-11-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN202221010335.8U Active CN217789984U (en) | 2022-04-28 | 2022-04-28 | High-voltage-resistant aluminum-based copper-clad plate |
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| CN (1) | CN217789984U (en) |
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2022
- 2022-04-28 CN CN202221010335.8U patent/CN217789984U/en active Active
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