CN217280688U - 基板处理装置及基板保持部 - Google Patents

基板处理装置及基板保持部 Download PDF

Info

Publication number
CN217280688U
CN217280688U CN201890001687.2U CN201890001687U CN217280688U CN 217280688 U CN217280688 U CN 217280688U CN 201890001687 U CN201890001687 U CN 201890001687U CN 217280688 U CN217280688 U CN 217280688U
Authority
CN
China
Prior art keywords
gas
reaction tube
substrate
gas supply
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201890001687.2U
Other languages
English (en)
Inventor
原大介
八幡橘
竹田刚
大野健治
山崎一彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Application granted granted Critical
Publication of CN217280688U publication Critical patent/CN217280688U/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20214—Rotation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

本实用新型提供一种基板处理装置及基板保持部，能够高效地除去反应管内的异物。该基板处理装置具有：处理基板的反应管；以及具有保持上述基板的多个支柱的基板保持部，至少一个上述支柱具有供给惰性气体的中空部和对上述反应管的内壁供给上述惰性气体的气体供给口。

Description

基板处理装置及基板保持部
技术领域
本实用新型涉及基板处理装置及基板保持部。
背景技术
半导体装置的制造工序之一具有对容纳于基板处理装置的处理容器内的基板供给处理气体，进行对该基板的处理(例如，成膜处理)。当进行上述基板处理时，有时处理气体的一部分会吸附(附着)于处理容器的内壁等。
作为抑制处理容器内的异物的产生的技术，例如有日本特开2013-225653 号公报(专利文献1)。
现有技术文献
专利文献
专利文献1：日本特开2013-225653号公报
实用新型内容
实用新型所要解决的课题
处理容器内的异物有时附着或残留于反应管的内壁，或者堆积于反应管内的下方。期望有效地除去这些异物。
本实用新型的目的在于提供一种能够高效地除去反应管内的异物的技术。
其它课题和新的特征根据本说明书的描述以及附图将变得清楚。
用于解决课题的方案
若简单地说明本公开中的代表性的方案的概述，则如下。
即，方案1为一种基板处理装置，其特征在于，具有：保持基板的基板保持部；容纳上述基板保持部，并处理上述基板的反应管；向上述反应管内供给处理气体的处理气体供给系统；排出上述反应管内的气体介质的排气系统；以及具有保持上述基板的多个支柱的基板保持部，在至少一个上述支柱形成有供给惰性气体的中空部和对上述反应管的内壁供给上述惰性气体的气体供给口。
方案2根据方案1记载的基板处理装置，其特征在于，具备使上述基板保持部旋转的旋转机构。
方案3根据方案2记载的基板处理装置，其特征在于，上述旋转机构具有使上述基板保持部旋转的旋转轴和保持上述基板保持部的旋转台，在上述旋转轴和上述旋转台设有向上述中空部供给上述惰性气体的气体供给管。
方案4根据方案3记载的基板处理装置，其特征在于，在上述旋转轴的中心设有上述气体供给管。
方案5根据方案1记载的基板处理装置，其特征在于，上述气体供给口在上述支柱以朝向上述反应管的内壁的方式开口，且从上述反应管的下部到上部设置有多个。
方案6为一种基板保持部，其特征在于，具备保持基板的多个支柱，在至少一个上述支柱形成有供给惰性气体的中空部和对反应管的内壁供给上述惰性气体的气体供给口。
方案7根据方案6记载的基板保持部，其特征在于，具备使上述基板保持部旋转的旋转机构。
方案8根据方案7记载的基板保持部，其特征在于，上述旋转机构具有使上述基板保持部旋转的旋转轴和保持上述基板保持部的旋转台，在上述旋转轴和上述旋转台设有向上述中空部供给上述惰性气体的气体供给管。
方案9根据方案8记载的基板保持部，其特征在于，在上述旋转轴的中心设有上述气体供给管。
方案10根据方案6记载的基板保持部，其特征在于，上述气体供给口在上述支柱以朝向上述反应管的内壁的方式开口，且从上述反应管的下部到上部设置有多个。
实用新型效果
根据本实用新型，能够提供一种可以高效除去反应管内的异物的技术。
附图说明
图1是适用于本实用新型的实施方式的基板处理装置的立式处理炉的概略结构图，是用纵剖视图表示处理炉部分的图。
图2是适用于本实用新型的实施方式的基板处理装置的立式处理炉的概略结构图，是用图1的A-A线剖视图表示处理炉部分的图。
图3的(a)是用于说明适用于本实用新型的实施方式的基板处理装置的缓冲构造的横剖视放大图；(b)是用于说明适用于本实用新型的实施方式的基板处理装置的缓冲构造的示意图。
图4是适用于本实用新型的实施方式的基板处理装置的控制器的概略结构图，是用框图表示控制器的控制系统的图。
图5是本实用新型的实施方式的基板处理工序的流程图。
图6是表示本实用新型的实施方式的基板处理工序中的气体供给的时机的图。
图7是在图2中追加晶舟的结构而表示的立式处理炉的概略结构图，是表示处理炉部分的剖视图。
图8是用横剖视图表示包含晶舟的处理炉部分的图。
具体实施方式
以下，使用附图对实施方式进行说明。但是，在以下的说明中，对相同的构成要素标注相同的符号，并省略重复的说明。此外，为了使描述更清楚，与实际的形态相比，有时示意性地示出附图，它们仅为示例，并不限定本实用新型的解释。
＜本实用新型的实施方式＞
以下，参照图1至图8对本实用新型的一实施方式进行说明。
(1)基板处理装置的结构(加热装置)
如图1所示，处理炉202是能够在垂直方向上多层地容纳基板的所谓的立式炉，具有作为加热装置(加热机构)的加热器207。加热器207为圆筒形状，通过支撑于作为保持板的加热器基座(未图示)而垂直地安装。加热器207 如后述地作为利用热使气体活性化(激发)的活性化机构(激发部)发挥作用。
(处理室)
在加热器207的内侧与加热器207同心圆状地配设有反应管203。反应管 203由例如石英(SiO2)或碳化硅(SiC)、氮化硅(SiN)等耐热性材料构成，形成为上端封闭且下端开口的圆筒形状。在反应管203的下方，与反应管203 同心圆状地配设有歧管(入口凸缘)209。歧管209由例如不锈钢(SUS)等金属构成，形成为上端及下端开口的圆筒形状。歧管209的上端部卡合于反应管203的下端部，构成为支撑反应管203。在歧管209与反应管203之间设置有作为密封部件的O形环220a。歧管209支撑于加热器基座，从而反应管203 为垂直地安装的状态。主要由反应管203和歧管209构成了处理容器(反应容器)。在处理容器的内侧即筒中空部形成有处理室201。处理室201构成为能够容纳多个作为基板的晶圆200。此外，处理容器不限于上述结构，有时也仅将反应管203称为处理容器。
(气体供给部)
喷嘴249a、249b以贯通歧管209的侧壁的方式设置于在处理室201内。在喷嘴249a、249b分别连接有气体供给管232a、232b。这样，在反应管203 设有两个喷嘴249a、249b和两个气体供给管232a、232b，能够向处理室201 内供给多种气体。
在气体供给管232a、232b，从气流的上游侧起分别依次设有作为流量控制器(流量控制部)的质量流量控制器(MFC)241a、241b及作为开闭阀的阀243a、243b。在气体供给管232a、232b的比阀243a、243b更靠下流侧分别连接有供给惰性气体的气体供给管232c、232d。在气体供给管232c、232d，从气体流的上游侧起分别依次设置有MFC241c、241d以及阀243c、243d。
如图2所示，喷嘴249a在反应管203的内壁与晶圆200之间的空间设置为沿着从反应管203的内壁的下部到上部，朝向晶圆200的装载方向上方起立。即，喷嘴249a在搬入到处理室201内的各晶圆200的端部(周缘部)的侧方沿与晶圆200的表面(平坦面)垂直的方向设置。在喷嘴249a的侧面设有供给气体的气体供给孔250a。气体供给孔250a以朝向反应管203的中心的方式开口，能够对晶圆200供给气体。气体供给孔250a从反应管203的下部到上部设有多个，分别具有相同的开口面积，而且以相同的开口间距设置。
在气体供给管232b的前端部连接有喷嘴249b。喷嘴249b设置于作为气体分散空间的缓冲室237内。如图2所示，缓冲室237在反应管203的内壁与晶圆200之间的俯视下圆环状的空间、且在从反应管203的内壁的下部至上部的部分沿着晶圆200的装载方向设置。即，缓冲室237在晶圆排列区域的侧方的水平包围晶圆排列区域的区域以沿着晶圆排列区域的方式由缓冲构造300 形成。缓冲构造300由石英等绝缘物构成，在缓冲构造300的形成为圆弧状的壁面形成有供给气体的气体供给口302、304。如图2及图3所示，气体供给口302、304在与后述的棒状电极269、270间、棒状电极270、271间的等离子生成区域224a、224b对置的位置分别以朝向反应管203的中心的方式开口，能够对晶圆200供给气体。气体供给口302、304从反应管203的下部至上部设有多个，分别具有相同的开口面积，而且以相同的开口间距设置。
喷嘴249b在缓冲构造300的内侧且排列有晶圆200的晶圆排列区域的侧方的水平包围晶圆排列区域的区域设置成沿着晶圆排列区域。即，喷嘴249b 在搬入处理室201内的晶圆200的端部的侧方沿与晶圆200的表面垂直的方向设置。在喷嘴249b的侧面设有供给气体的气体供给孔250b。气体供给孔250b 以朝向相对于缓冲构造300的形成为圆弧状的壁面沿径向形成的壁面的方式开口，能够朝向壁面供给气体。由此，反应气体在缓冲室237内分散，不会向棒状电极269～271直接吹送，抑制了颗粒的产生。气体供给孔250b从反应管 203的下部至上部设置有多个。
这样，在本实施方式中，经由配置于由反应管203的侧壁的内壁和排列于反应管203内的多个晶圆200的端部定义的俯视圆环状的纵长的空间内、即圆筒状的空间内的喷嘴249a、249b及缓冲室237输送气体。于是，在晶圆200 的附近首先从在喷嘴249a、249b及缓冲室237分别开口的气体供给孔250a、 250b、气体供给口302、304向反应管203内喷出气体。而且，反应管203内的气体的主流为与晶圆200的表面平行的方向、即、水平方向。通过这样的结构，能够向各晶圆200均匀地供给气体，能够提高形成于各晶圆200的膜的膜厚的均匀性。在晶圆200的表面上流动的气体、即反应后的残留气体朝向排气口、即后述的排气管231的方向流动。但是，该残留气体的流动的方向由排气口的位置适当指定，并不限于垂直方向。
作为包含预定元素的原料，例如包含作为预定元素的硅(Si)的硅烷原料气体从气体供给管232a经由MFC241a、阀243a、喷嘴249a向处理室201内供给。
原料气体是指气体状态的原料，例如通过将常温常压下为液体状态的原料气化而得到的气体、常温常压下为气体状态的原料等。在本说明书中，在使用“原料”这一术语的情况下，有时是指“为液体状态的液体原料”，有时是指“为气体状态的原料气体”，或者有时是指这双方。
作为硅烷原料气体，例如，能够使用包含Si及卤素元素的原料气体、即卤硅烷原料气体。作为卤硅烷原料是指具有卤素基的硅烷原料。卤素元素包含选自由氯(Cl)、氟(F)、溴(Br)、碘(I)构成的组中的至少一个。即，卤硅烷原料包含选自由氯基、氟基、溴基、碘基构成的组中的至少一个卤素基。卤硅烷原料也可以说是卤化物的一种。
作为卤硅烷原料气体，例如能够使用包含Si及Cl的原料气体、即氯硅烷原料气体。作为氯硅烷原料气体，例如能够使用二氯硅烷(SiH2Cl2、简称： DCS)气体。
构成为，作为包含与上述的预定元素不同的元素的反应物(反应体)，例如作为反应气体的含氮(N)气体从气体供给管232b经由MFC241b、阀243b、喷嘴249b向处理室201内供给。作为含N气体，例如能够使用氮化氢类气体。氮化氢类气体也可以说是仅由N及H两个元素构成的物质，作为氮化气体、即N源发挥作用。作为氮化氢类气体，例如能够使用氨(NH3)气体。
作为惰性气体，例如氮(N2)气体从气体供给管232c、232d分别经由 MFC241c、241d、阀243c、243d、气体供给管232a、232b、喷嘴249a、249b 向处理室201内供给。
主要由气体供给管232a、MFC241a、阀243a构成作为第一气体供给系统的原料供给系统。主要由气体供给管232b、MFC241b、阀243b构成作为第二气体供给系统的反应体供给系统(反应物供给系统)。主要由气体供给管232c、 232d、MFC241c、241d、阀243c、243d构成惰性气体供给系统。也将原料供给系统、反应体供给系统以及惰性气体供给系统总称地简称为处理气体供给系统(气体供给部)。另外，也将原料气体和反应气体总称地简称为处理气体。
(等离子生成部)
如图2及图3所示，在缓冲室237内，作为导电体且具有细长的构造的三个棒状电极269、270、271从反应管203的下部至上部沿着晶圆200的层叠方向配设。棒状电极269、270、271分别与喷嘴249b平行地设置。棒状电极269、 270、271分别从上部至下部被电极保护管275覆盖而被保护。棒状电极269、 270、271中的配置于两端的棒状电极269、271经由整合器272连接于高频电源273，棒状电极270连接于作为基准电位的大地而接地。即，连接于高频电源273的棒状电极和接地的棒状电极交替配置，配置于连接于高频电源273 的棒状电极269、271之间的棒状电极270作为接地的棒状电极相对于棒状电极269、271被共通地使用。换言之，接地的棒状电极270以被相邻的连接于高频电源273的棒状电极269、271夹着的方式配置，构成为棒状电极269和棒状电极270、同样地棒状电极271和棒状电极270分别成对，并且生成等离子。也就是，接地的棒状电极270相对于电极270相邻的两个连接于高频电源273的棒状电极269、271被共通地使用。于是，通过从高频电源273向棒状电极269、271施加高频(RF)电力，在棒状电极269、270间的等离子生成区域224a、棒状电极270、271间的等离子生成区域224b生成等离子。主要由棒状电极269、270、271、电极保护管275构成作为等离子源的等离子生成部(等离子生成装置)。也可以考虑使整合器272、高频电源273包含于等离子源。如后述地，等离子源作为将气体等离子激发、即激发(活性化)成等离子状态的等离子激发部(活性化机构)发挥作用。
电极保护管275为如下构造：能够将棒状电极269、270、271分别以与缓冲室237内的气体介质隔离的状态插入缓冲室237内。若电极保护管275的内部的O2浓度与外部大气(大气)的O2浓度为相同程度，则分别插入到电极保护管275内的棒状电极269、270、271因加热器207的热而氧化。因此，通过在电极保护管275的内部填充有N2气体等惰性气体填充、或者使用惰性气体净化机构利用N2气体等惰性气体净化电极保护管275的内部，从而能够降低电极保护管275的内部的O2浓度，防止棒状电极269、270、271的氧化。
(排气部)
在反应管203设有排出处理室201内的气体介质的排气管231。在排气管 231，经由作为检测处理室201内的压力的压力检测器(压力检测部)的压力传感器245及作为排气调整器(压力调整部)的APC(Auto Pressure Controller) 阀244连接有作为真空排气装置的真空泵246。APC阀244是如下构成的阀，即，在使真空泵246工作的状态下，通过开闭阀，能够进行处理室201内的真空排气及真空排气停止，而且，在使真空泵246工作的状态下，通过基于由压力传感器245检测出的压力信息调节阀开度，能够调整处理室201内的压力。主要由排气管231、APC阀244、压力传感器245构成排气系统。也可以考虑将真空泵246包含于排气系统中。排气管231不限定于设置于反应管203的情况，也可以与喷嘴249a、249b同样地设置于歧管209。
在歧管209的下方设有可气密地封闭歧管209的下端开口的作为炉口盖体的密封盖219。密封盖219构成为从垂直方向下侧抵接于歧管209的下端。密封盖219由例如SUS等金属构成，形成为圆盘状。在密封盖219的上表面设有与歧管209的下端抵接的作为密封部件的O形环220b。在密封盖219的与处理室201相反的侧设置有使后述的晶舟217旋转的旋转机构267。旋转机构 267的旋转轴255贯通密封盖219连接于晶舟217。旋转机构267构成为通过使晶舟217旋转而使晶圆200旋转。密封盖219构成为通过垂直设置于反应管 203的外部的作为升降机构的晶舟升降机115在垂直方向上升降。晶舟升降机 115构成为通过使密封盖219升降而能够将晶舟217在处理室201内外搬入及搬出。晶舟升降机115构成为将晶舟217即晶圆200在处理室201内外输送的输送装置(输送机构)。另外，在歧管209的下方设有在通过晶舟升降机115 使密封盖219下降的期间能够气密地封闭歧管209的下端开口的作为炉口盖体的闸门219s。闸门219s由例如SUS等金属构成，形成为圆盘状。在闸门219s 的上表面设有与歧管209的下端抵接的作为密封部件的O形环220c。闸门219s 的开闭动作(升降动作、转动动作等)由闸门开闭机构115s控制。
(基板保持部)
如图1所示，作为基板保持部的晶舟217构成为，将多个、例如25～200 个晶圆200以水平姿势、且以彼此中心对齐的状态在垂直方向上整齐排列而多层地支撑，即隔开预定间隔排列。晶舟217由例如石英、SiC等耐热性材料构成。在晶舟217的下部，多层地支撑有由例如石英、SiC等耐热性材料构成的隔热板218。
如图2所示，在反应管203的内部设置有作为温度检测器的温度传感器 263。通过基于由温度传感器263检测出的温度信息调整对加热器207的通电状况，从而是处理室201内的温度成为期望的温度分布。温度传感器263与喷嘴249a、249b同样地沿着反应管203的内壁设置。
图7是在图2追加晶舟217的结构而表示的立式处理炉的概略结构图，是表示处理炉部分的剖视图。图8是用纵剖视图表示包含晶舟217的处理炉部分的图。
如图7及图8所示，晶舟217具备上下一对端板30、31和垂直架设于它们之间的三个支柱(晶舟柱)32a、32b、32c，在三个支柱32a、32b、32c上沿长边方向等间隔地刻有多个保持槽33。在三个支柱32a、32b、32c中刻于同一层的保持槽33、33、33彼此互相对置地开口。晶舟217通过将晶圆200 插入三个支柱32a、32b、32c的同一层的保持槽35来将多个晶圆200水平且以互相对齐中心的状态整齐排列而保持。支柱32a、32b、32c由石英等绝缘物构成。
在晶舟217的具有基板200的保持槽33的三个支柱32a、32b、32c中的至少一个支柱32a形成有供给惰性气体的中空部(气体供给管)35和朝向反应管203的内壁供给(喷出)惰性气体(净化气体)的气体供给口36。气体供给口36以朝向反应管203的内壁的方式开口，能够对反应管203的内壁供给惰性气体PG1。气体供给口36从反应管203的下部至上部设置有多个，分别具有相同的开口面积，而且以相同的开口间距设置。由此，可以对反应管 203的内壁中的容易附着或残留异物(副生成物)的区域203a、203b供给惰性气体，能够有效地除去附着或残留于反应管203的内壁的区域203a、203b 的异物。
晶舟旋转机构267具备用于使晶舟217沿晶舟旋回方向BR旋转的旋转轴 255和保持晶舟217的旋转台256，为了向设有中空部35的晶舟217供给惰性气体，具备气体(惰性气体、净化气体)供给管38a、38b。设置于旋转轴256 的气体供给管38a形成于旋转轴255的旋转中心BRC。设置于旋转台256的气体供给管38b形成为连接设置于旋转轴255的中心的气体供给管38a和晶舟 217的中空部35。
在保持反应管203的入口转接器209a、作为晶舟升降机构的晶舟升降机 115、晶舟旋转机构267设置有用于供给惰性气体的气体(惰性气体、净化气体)供给管38c。
构成为，惰性气体经由入口转接器209a、晶舟升降机构115、晶舟旋转机构267从旋转轴255的气体供给管38a及旋转台256的气体供给管38b供给至晶舟217的中空部35供给，并且以预定的流量从晶舟217的气体供给口(开口)36对反应管203的内壁喷出。
另外，通过晶舟旋转机构267，晶舟217沿晶舟旋回方向BR旋转，从而能够对包括容易附着或残留异物(副生成物)的区域203a、203b的反应管203 的内壁整体供给净化气体PG1。
关于设置于支柱32a的多个气体供给口36的开口间距，为了向反应管203 的内壁供给恒等流量的惰性气体，如果反应管203的内壁与支柱(32a、32b、 32c)的距离短，则增大开口间距，如果反应管203的内壁与支柱(32a、32b、 32c)的距离长，则减小开口间距即可。
另外，在旋转轴255设置有气体供给口37，该气体供给口37对配设于反应管203的下方的歧管(入口凸缘/入口转接器)209、209a供给净化气体。由此，能够除去堆积于反应管203的下方的副生成物。
气体供给口36、37的形状不仅是圆，也可以是椭圆。
(控制装置)
接下来，使用图4对控制装置进行说明。如图4所示，作为控制部(控制装置)的控制器121构成为具备CPU(Central Processing Unit)121a、RAM (Random Access Memory)121b、存储装置121c、I/O端口121d的计算机。 RAM121b、存储装置121c、I/O端口121d构成为能够经由内部总线121e与 CPU121a进行数据交换。在控制器121连接有构成为例如触控面板等的输入输出装置122。
存储装置121c例如由闪存、HDD(Hard Disk Drive)等构成。在存储装置121c内可读取地存储有控制基板处理装置的动作的控制程序、记载有后述的成膜处理的步骤、条件等的工艺配方等。工艺配方是将后述的各种处理(成膜处理)中的各步骤以使控制器121执行而得到预定的结果的方式组合而成，作为程序发挥作用。以下，将工艺配方、控制程序等总称地简称为程序。另外，也将工艺配方简称为配方。在本说明书中使用程序这一术语的情况，有时仅包括配方单体，有时仅包括控制程序单体，或者有时包含它们双方。RAM121b 构成为暂时保持由CPU121a读出的程序、数据等的存储器区域(工作区域)。
I/O端口121d与上述的MFC241a～241d、阀243a～243d、压力传感器245、APC阀244、真空泵246、加热器207、温度传感器263、整合器272、高频电源273、旋转机构267、晶舟升降机115、闸门开闭机构115s等连接。
CPU121a构成为，从存储装置121c读取控制程序并执行，并且根据来自输入输出装置122的操作指令的输入等从存储装置121c读取配方。CPU121a 构成为，以按照读取到的配方的内容的方式控制旋转机构267的控制、 MFC241a～241d对各种气体的流量调整动作、阀243a～243d的开闭动作、基于阻抗监控的高频电源273的调整动作、基于APC阀244的开闭动作及压力传感器245的APC阀244的压力调整动作、真空泵246的启动及停止、基于温度传感器263的加热器207的温度调整动作、旋转机构267对晶舟217的正反旋转、旋转角度以及旋转速度调节动作、晶舟升降机115对晶舟217的升降动作等。
控制器121能够通过将存储于外部存储装置(例如、硬盘等磁盘、CD等光盘、MO等光磁盘、USB存储器等半导体存储器)123的上述程序安装于计算机而构成。存储装置121c、外部存储装置123构成为计算机可读取的存储介质。以下，也将它们总称地简称为存储介质。在本说明书中使用存储介质这一术语的情况有时仅包括存储装置121c单体、有时仅包括外部存储装置123 单体、或者有时包括它们双方。此外，向计算机提供程序也可以不使用外部存储装置123，而是使用互联网、专线等通信手段。
(2)基板处理工序
作为半导体装置的制造方法的一工序，参照图5及图6对使用基板处理装置100在晶圆200上形成薄膜的工序进行说明。在以下的说明中，构成基板处理装置的各部的动作由控制器121控制。
在此，对如下例进行说明，即，通过将供给作为原料气体的DCS气体的步骤和供给作为反应气体的进行了等离子激发的NH3气体的步骤非同时地、即不同步地进行预定次数(一次以上)，在晶圆200上形成氮化硅膜(SiN膜) 作为包含Si及N的膜。另外，例如，也可以在晶圆200上预先形成有预定的膜。另外，也可以在晶圆200或预定的膜预先形成有预定的图案。
在本说明书中，方便起见，有时如下地示出图6所示的成膜处理的工艺流程。
Figure DEST_PATH_GDA0003690198200000121
在本说明书中，使用“晶圆”这一术语的情况有时是指晶圆本身、有时是指晶圆与形成于其表面的预定的层或膜的层叠体。在本说明书中，使用“晶圆的表面”这一术语的情况有时是指晶圆本身的表面、有时是指形成于晶圆上的预定的层等的表面。在本说明书中，记载为“在晶圆上形成预定的层”的情况有时是指在晶圆本身的表面上直接形成预定的层、有时是指在形成于晶圆上的层等之上形成预定的层。在本说明书中，使用“基板”这一术语的情况也与使用“晶圆”这一术语的情况同义。
(晶圆装料及晶舟装载步骤：S1、S2)
当将多个晶圆200装填于晶舟217(晶圆装料)时，通过闸门开闭机构115s 使闸门219s移动，使歧管209的下端开口开放(闸门打开)。然后，如图1所示地，支撑有多个晶圆200的晶舟217被晶舟升降机115提升而被搬入处理室201内(晶舟装载)。在该状态下，密封盖219为经由O形环220b将歧管209 的下端密封的状态。
(压力、温度调整步骤：S3)
通过真空泵246进行真空排气(減压排气)，以使处理室201的内部、即存在晶圆200的空间成为期望的压力(真空度)。此时，由压力传感器245测定处理室201内的压力，基于该测定出的压力信息，对APC阀244进行反馈控制(压力调整)。真空泵246至少在直至后述的成膜步骤结束为止的期间始终维持运转的状态。
另外，通过加热器207进行加热，以使处理室201内的晶圆200成为期望的温度。此时，基于温度传感器263检测出的温度信息，反馈控制对加热器 207的通电状况，以使处理室201内成为期望的温度分布(温度调整)。加热器207对处理室201内的加热至少在直至后述的成膜步骤结束为止的期间持续进行。但是，在室温以下的温度条件下进行成膜步骤的情况下，也可以不进行加热器207对处理室201内的加热。此外，在只进行这样的温度下的处理的情况下，不需要加热器207，也可以在基板处理装置不设置加热器207。在该情况下，能够简化基板处理装置的结构。
接着，开始旋转机构267对晶舟217及晶圆200的旋转。旋转机构267 对晶舟217及晶圆200的旋转至少在直至成膜步骤结束为止的期间持续进行。
(原料气体供给步骤：S4、S5)
在步骤S4中，对处理室201内的晶圆200供给DCS气体。
打开阀243a，向气体供给管232a内流入DCS气体。DCS气体由MFC241a 进行流量调整，经由喷嘴249a从气体供给孔250a供给至处理室201内，并从排气管231排出。此时，同时打开阀243c，向气体供给管232c内流入N2气体。 N2气体由MFC241c进行流量调整，且与DCS气体一同供给至处理室201内，并从排气管231排出。
另外，为了抑制DCS气体侵入喷嘴249b内，打开阀243d，向气体供给管232d内流入N2气体。N2气体经由气体供给管232b、喷嘴249b供给至处理室201内，并从排气管231排出。
通过MFC241a控制的DCS气体的供给流量设为例如1sccm以上、 6000sccm以下、优选3000sccm以上、5000sccm以下的范围内的流量。通过 MFC241c、241d控制的N2气体的供给流量分别设为例如100sccm以上、 10000sccm以下的范围内的流量。处理室201内的压力设为例如1Pa以上、 2666Pa以下、优选665Pa以上、1333Pa以下的范围内的压力。将晶圆200暴露于DCS气体的时间设为例如1秒以上、10秒以下、优选1秒以上、3秒以下的范围内的时间。此外，将晶圆200暴露于DCS气体的时间根据膜厚不同而不同。
加热器207的温度设定为使晶圆200的温度成为例如0℃以上700℃以下、优选室温(25℃)以上550℃以下、更优选40℃以上500℃以下的范围内的温度的温度。如本实施方式地将晶圆200的温度设为700℃以下、进一步地设为 550℃以下、更进一步地设为500℃以下，能够降低施加于晶圆200的热量，能够良好地进行晶圆200承受的热历史的控制。
通过在上述的条件下对晶圆200供给DCS气体，在晶圆200(表面的基底膜)上形成含Si层。含Si层除了Si层之外，还可以含有Cl、H。在晶圆 200的最表面通过物理吸附DCS、或者化学吸附DCS的一部分分解后得到的物质、或者因DCS热分解而使Si堆积等，从而形成含Si层。即，含Si层也可以是DCS、DCS的一部分分解后得到的物质的吸附层(物理吸附层、化学吸附层)，也可以是Si的堆积层(Si层)。
形成含Si层后，关闭阀243a，停止向处理室201内供给DCS气体。此时， APC阀244保持打开，通过真空泵246对处理室201内进行真空排气，将残留于处理室201内的未反应或参与含Si层的形成之后的DCS气体、反应副生成物等从处理室201内排除(S4)。另外，阀243c、243d保持打开，维持向处理室201内供给N2气体。N2气体作为净化气体发挥作用。此外，也可以省略该步骤S5。
作为原料气体，除了DCS气体，还能够适当使用四烷基二甲基氨基硅烷 (Si[N(CH3)2]4、简称：4DMAS)气体、三甲基氨基硅烷(Si[N(CH3) 2]3H、简称：3DMAS)气体、双二甲基氨基硅烷(Si[N(CH3)2]2H2、简称：BDMAS)气体、双二乙基氨基硅烷(Si[N(C2H5)2]2H2、简称：BDEAS)、双(叔丁基氨基)硅烷(SiH2[NH(C4H9)]2、简称：BTBAS)气体、二甲基氨基硅烷(DMAS)气体、二乙氨基硅烷(DEAS)气体、二丙基氨基硅烷 (DPAS)气体、二异丙基氨基硅烷(DIPAS)气体、丁基氨基硅烷(BAS) 气体、六甲基二硅氮烷(HMDS)气体等各种氨基硅烷原料气体、单氯硅烷 (SiH3Cl、简称：MCS)气体、三氯硅烷(SiHCl3、简称：TCS)气体、四氯硅烷(SiCl4、简称：STC)气体、六氯乙硅烷(Si2Cl6、简称：HCDS)气体、八氯三硅烷(Si3Cl8、简称：OCTS)气体等无机系卤代硅烷原料气体、甲硅烷 (SiH4、简称：MS)气体、乙硅烷(Si2H6、简称：DS)气体、丙硅烷(Si3H8、简称：TS)气体等不含卤基的无机系硅烷原料气体。
作为惰性气体，除了N2气体，还能够使用Ar气体、He气体、Ne气体、 Xe气体等稀有气体。
(反应气体供给步骤：S6、S7)
成膜处理结束后，对处理室201内的晶圆200供给作为反应气体的进行了等离子激发的NH3气体(S6)。
在该步骤中，以与步骤S4中的阀243a、243c、243d的开闭控制相同的顺序进行阀243b～243d的开闭控制。NH3气体由MFC241b进行流量调整，经由喷嘴249b供给至缓冲室237内。此时，在棒状电极269、270、271间供给高频电力。供给至缓冲室237内的NH3气体被激发(等离子化并被活性化)成等离子状态，作为活性种(NH3*)供给至处理室201内，并从排气管231排出。
通过MFC241b控制的NH3气体的供给流量设为例如100sccm以上、 10000sccm以下、优选1000sccm以上、2000sccm以下的范围内的流量。施加于棒状电极269、270、271的高频电力设为例如50W以上、600W以下的范围内的电力。处理室201内的压力设为例如1Pa以上、500Pa以下的范围内的压力。通过使用等离子，即使将处理室201内的压力设为这样较低的压力带，也能够使NH3气体活性化。对晶圆200供给通过对NH3气体进行等离子激发而得到的活性种的时间、即气体供给时间(照射时间)设为例如1秒以上、180 秒以下、优选1秒以上、60秒以下的范围内的时间。其它处理条件设为与上述S4相同的处理条件。
通过在上述条件下对晶圆200供给NH3气体，形成于晶圆200上的含Si 层被等离子氮化。此时，通过进行了等离子激发的NH3气体的能量，含Si层具有的Si-Cl键、Si-H键被切断。将与Si的键切开而得到的Cl、H从含Si层脱离。而且，由于Cl等脱离而具有未键合键(悬空键)的含Si层中的Si与 NH3气体含有N键合，形成Si-N键。通过进行该反应，含Si层变化(改性) 成包含Si及N的层、即氮化硅层(SiN层)。
此外，为了使含Si层改性成SiN层，需要将NH3气体等离子激发而供给。这是因为，即使在非等离子气氛下供给NH3气体，在上述温度带下，使含Si 层氮化所需要的能量不足，难以使Cl、H从含Si层充分脱离、或者难以使含 Si层充分氮化来增加Si-N键。
使含Si层变化成SiN层之后，关闭阀243b，停止供给NH3气体。另外，停止向棒状电极269、270、271间供给高频电力。而且，通过与步骤S5相同的处理顺序、处理条件，将残留于处理室201内的NH3气体、反应副生成物从处理室201内排除(S7)。此外，也可以省略该步骤S7。
作为氮化剂、即进行等离子激发的含N气体，除了NH3气体，也可以使用二氮烯(N2H2)气体、肼(N2H4)气体、N3H8气体等。
作为惰性气体，除了N2气体，例如还能够使用步骤S4中例示的各种稀有气体。
(实施预定次数：S8)
将非同时地、即不同步地依次进行上述的S4、S5、S6、S7作为一循环，将该循环进行预定次数(n次)、即一次以上(S7)，从而能够在晶圆200上形成预定组成及预定膜厚的SiN膜。上述的循环优选反复进行多次。即，优选使每一循环形成的SiN层的厚度比期望的膜厚小，直至通过层叠SiN层形成的 SiN膜的膜厚成为期望的膜厚为止，反复进行多次上述的循环。
(大气压恢复步骤：S9)
上述的成膜处理完成后，从气体供给管232c、232d分别向处理室201内供给作为惰性气体的N2气体，并从排气管231排出。由此，处理室201内被惰性气体净化，从处理室201内除去残留于处理室201内的气体等(惰性气体净化)。然后，处理室201内的气体介质置换成惰性气体(惰性气体置换)，处理室201内的压力恢复为常压(S9)。
(晶舟卸载及晶圆卸料步骤：S10、S11)
然后，通过晶舟升降机115将密封盖219下降，歧管209的下端开口，并且处理完成的晶圆200以支撑于晶舟217的状态从歧管209的下端搬出至反应管203的外部(晶舟卸载)(S10)。晶舟卸载后，使闸门219s移动，歧管209 的下端开口经由O形环220c被闸门219s密封(闸门关闭)。将处理完成的晶圆200在搬出至反应管203的外部后，从晶舟217取出(晶圆卸料)。
(实施预定次数的成膜处理：S12)
在此，作为成膜处理，判断从S1到S11是否已经实施了预定次数，在未达到预定次数的情况下，反复实施S1至S11。另外，在成膜处理达到预定次数的情况下，转移至后述的反应管内壁净化步骤(净化气体(惰性气体)供给步骤：S15)。此外，作为预定次数，例如，在实施了20次、即20批次预定次数的成膜处理的情况下，实施净化反应管203的内壁的处理。另外，预定次数可以根据堆积于反应管203的内壁的副生成物的厚度适当决定。
(晶舟装载：S13)
使闸门219s移动，歧管209的下端开口开放(闸门打开)。未装填晶圆 200的空的状态的晶舟217被晶舟升降机115提升而被搬入处理室201内(晶舟装载：S12)。在该状态下，密封盖219成为经由O形环220b密封歧管209 的下端的状态。
(压力、温度调整：S14)
然后，通过真空泵246进行真空排气，以使处理室201的内部、即存在晶圆200的空间成为期望的压力(真空度)(减压排气)。此时，通过压力传感器 245测定处理室201内的压力，基于该测定出的压力信息对APC阀244进行反馈控制。真空泵246至少在直至后述的反应管内壁净化步骤(净化气体供给步骤：S15)结束为止的期间始终维持工作的状态。
另外，通过加热器207进行加热，以使处理室内成为期望的温度。此时，基于温度传感器263检测的温度信息，反馈控制对加热器207的通电状况，以使处理室内成为期望的温度分布。加热器207对处理室201内的加热至少在直至后述的反应管内壁净化步骤(净化气体供给步骤：S15)结束为止的期间持续进行。但是，在室温以下的温度条件下进行反应管内壁净化步骤的情况下，也可以不进行加热器207对处理室201内的加热。
接着，开始旋转机构267对晶舟217及晶圆200的旋转。旋转机构267 对晶舟217及晶圆200的旋转至少在直至反应管内壁净化步骤(净化气体供给步骤：S15)结束为止的期间持续进行。
(净化气体供给步骤：S15)
当利用旋转机构267进行的晶舟217的旋转为预定的速度时，开始以期望的供给流量对晶舟217的中空部35供给作为净化气体(惰性气体)的N2气体，以预定的流量从形成于晶舟217的支柱32a的气体供给口36对反应管203的内壁喷出N2气体。另外，以预定的流量从旋转轴255的气体供给口37对配设于反应管203的下方的歧管(入口凸缘/入口转接器)209、209a喷出N2气体。
就反应管203的内壁的净化处理时间而言，例如，若晶舟217的旋转速度是一分钟转一转的速度，则只要是五分钟左右即可。此外，反应管203的内壁的净化处理时间只要基于反应管203的内壁的副生成物的膜厚、净化供给流量等适当决定即可。
在此，说明了在实施预定次数的成膜处理后，实施反应管203的内壁的净化处理，但并不限定于此，例如在成膜处理中，也可以与供给净化气体的步骤 (S5、S7)同时地实施反应管203的内壁的净化处理。另外，也可以与反应管203内的清洁处理同时地实施反应管203的内壁的净化处理。
(大气压恢复步骤：S16)
反应管203的内壁的净化处理完成后，使处理室201内的压力恢复为常压。
(晶舟卸载：S17)
然后，通过晶舟升降机115使密封盖219下降，歧管209的下端开口，并且从歧管209的下端向反应管203的外部搬出晶舟217(晶舟卸载)。
在以上的说明中，对具有缓冲构造300的基板处理装置100进行了说明，但缓冲构造300不是必须的结构，不具有缓冲构造300的基板处理装置也可以应用本实用新型。
(3)本实施方式的效果
(a)在晶舟201的至少一个支柱32a设置有中空部35和朝向反应管203 的内壁供给净化气体的多个气体供给口36。由此，能够对反应管203的内壁中的容易附着或残留异物(副生成物)的区域203a、203b供给净化气体，能够有效地除去附着或残留于反应管203的内壁的区域203a、203b的异物。
(b)在旋转轴255设有对配设于反应管203的下方的歧管(入口凸缘/ 入口转接器)209、209a供给净化气体的气体供给口37。由此，能够有效地除去堆积于反应管203的下方的副生成物。
在上述的实施方式中，对在供给原料后供给反应气体的例进行了说明。本实用新型不限定于这样的方式，原料、反应气体的供给顺序也可以相反。即，也可以在供给反应气体后供给原料。通过改变供给顺序，能够使形成的膜的膜质、组成比变化。
在上述的实施方式等中，对在晶圆200上形成SiN膜的例进行了说明。但本实用新型不限于这样的方式，也能够适当应用于如下情况：在晶圆200上形成氧化硅膜(SiO膜)、碳氧化硅(SiOC膜)、碳氮氧化硅膜(SiOCN膜)、氮氧化硅膜(SiON膜)等Si系氧化膜的情况、在晶圆200上形成碳氮化硅(SiCN 膜)、硼氮化硅膜(SiBN膜)、硼碳氮化硅膜(SiBCN膜)、硼碳氮化膜(BCN 膜)等Si系氮化膜的情况。在这些情况下，作为反应气体，除了含O气体，还能够使用C3H6等含C气体、NH3等含N气体、BCl3等含B气体。
另外，本实用新型也能够适当地应用于如下情况：在晶圆200上形成包含钛(Ti)、锆(Zr)、铪(Hf)、钽(Ta)、铌(Nb)、铝(Al)、钼(Mo)、钨(W) 等金属元素的氧化膜、氮化膜、即金属系氧化膜、金属系氮化膜。即，本实用新型也能够适当地应用于如下情况：在晶圆200上形成TiO膜、TiN膜、TiOC 膜、TiOCN膜、TiON膜、TiBN膜、TiBCN膜、ZrO膜、ZrN膜、ZrOC膜、ZrOCN膜、ZrON膜、ZrBN膜、ZrBCN膜、HfO膜、HfN膜、HfOC膜、HfOCN 膜、HfON膜、HfBN膜、HfBCN膜、TaO膜、TaOC膜、TaOCN膜、TaON 膜、TaBN膜、TaBCN膜、NbO膜、NbN膜、NbOC膜、NbOCN膜、NbON 膜、NbBN膜、NbBCN膜、AlO膜、AlN膜、AlOC膜、AlOCN膜、AlON膜、 AlBN膜、AlBCN膜、MoO膜、MoN膜、MoOC膜、MoOCN膜、MoON膜、 MoBN膜、MoBCN膜、WO膜、WN膜、WOC膜、WOCN膜、WON膜、MWBN膜、WBCN膜等。
在这些情况下，例如，作为原料气体，能够使用四(二甲氨基)钛(Ti [N(CH3)2]4、简称：TDMAT)气体、四(乙基甲基氨基)铪(Hf[N(C2H5) (CH3)]4、简称：TEMAH)气体、四(乙基甲基氨基)锆(Zr[N(C2H5) (CH3)]4、简称：TEMAZ)气体、三甲基铝(Al(CH3)3、简称：TMA) 气体、四氯化钛(TiCl4)气体、四氯化铪(HfCl4)气体等。作为反应气体，能够使用上述的反应气体。
即，本实用新型能够适当地应用于形成包含半金属元素的半金属系膜、包含金属元素的金属系膜的情况。这些成膜处理的处理步骤、处理条件能够设为与上述实施方式、变形例中所示的成膜处理相同的处理步骤、处理条件。在这些情况下，也能够得到与上述的实施方式、变形例相同的效果。
优选地，用于成膜处理的配方根据处理内容个别地准备，且经由电气通信线路、外部存储装置123存储于存储装置121c内。而且，优选地，在开始各种处理时，CPU121a根据处理内容从存储于存储装置121c内的多个配方中适当地选择合适的配方。由此，能够利用一台基板处理装置通用地且再现性良好地形成各种膜种类、组成比、膜质、膜厚的薄膜。另外，能够降低操作者的负担，避免误操作，并且能够迅速地开始各种处理。
上述配方不限于新创建的情况，例如，也可以通过对已经安装于基板处理装置的现有的配方进行变更来准备。在变更配方的情况下，也可以将变更后的配方经由电气通信电路、存储有该配方的存储介质安装于基板处理装置。另外，也可以对现有的基板处理装置具备的输入输出装置122进行操作，直接变更已安装于基板处理装置的现有的配方。
以上，基于实施例对本实用新型者作成的实用新型具体地进行了说明，但本实用新型并不限定于上述实施方式及实施例，当然能够进行各种变更。
生产上的可利用性
如上所述，根据本实用新型，能够提供一种能够高效地除去基板处理装置的反应管内的异物的技术。
符号说明
100—基板处理装置，200—晶圆(基板)，203—反应管，217—晶舟(基板保持部)，32a、32b、32c—支柱，35—中空部，36、37—气体供给口。

Claims (10)

1.一种基板处理装置，其特征在于，具有：
保持基板的基板保持部；
容纳上述基板保持部，并处理上述基板的反应管；
向上述反应管内供给处理气体的处理气体供给系统；
排出上述反应管内的气体介质的排气系统；以及
具有保持上述基板的多个支柱的基板保持部，
在至少一个上述支柱形成有供给惰性气体的中空部和对上述反应管的内壁供给上述惰性气体的气体供给口。
2.根据权利要求1所述的基板处理装置，其特征在于，
具备使上述基板保持部旋转的旋转机构。
3.根据权利要求2所述的基板处理装置，其特征在于，
上述旋转机构具有使上述基板保持部旋转的旋转轴和保持上述基板保持部的旋转台，在上述旋转轴和上述旋转台设有向上述中空部供给上述惰性气体的气体供给管。
4.根据权利要求3所述的基板处理装置，其特征在于，
在上述旋转轴的中心设有上述气体供给管。
5.根据权利要求1所述的基板处理装置，其特征在于，
上述气体供给口在上述支柱以朝向上述反应管的内壁的方式开口，且从上述反应管的下部到上部设置有多个。
6.一种基板保持部，其特征在于，
具备保持基板的多个支柱，在至少一个上述支柱形成有供给惰性气体的中空部和对反应管的内壁供给上述惰性气体的气体供给口。
7.根据权利要求6所述的基板保持部，其特征在于，
具备使上述基板保持部旋转的旋转机构。
8.根据权利要求7所述的基板保持部，其特征在于，
上述旋转机构具有使上述基板保持部旋转的旋转轴和保持上述基板保持部的旋转台，在上述旋转轴和上述旋转台设有向上述中空部供给上述惰性气体的气体供给管。
9.根据权利要求8所述的基板保持部，其特征在于，
在上述旋转轴的中心设有上述气体供给管。
10.根据权利要求6所述的基板保持部，其特征在于，
上述气体供给口在上述支柱以朝向上述反应管的内壁的方式开口，且从上述反应管的下部到上部设置有多个。
CN201890001687.2U 2018-09-12 2018-09-12 基板处理装置及基板保持部 Active CN217280688U (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2018/033861 WO2020053996A1 (ja) 2018-09-12 2018-09-12 基板処理装置、半導体装置の製造方法およびプログラム

Publications (1)

Publication Number Publication Date
CN217280688U true CN217280688U (zh) 2022-08-23

Family

ID=69777752

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201890001687.2U Active CN217280688U (zh) 2018-09-12 2018-09-12 基板处理装置及基板保持部

Country Status (5)

Country Link
US (1) US11961715B2 (zh)
JP (1) JP7058338B2 (zh)
KR (1) KR102559937B1 (zh)
CN (1) CN217280688U (zh)
WO (1) WO2020053996A1 (zh)

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04245421A (ja) 1991-01-30 1992-09-02 Hitachi Ltd 熱処理装置
JPH05175130A (ja) * 1991-12-20 1993-07-13 Nippon Steel Corp プラズマｃｖｄ装置
JPH05291240A (ja) * 1992-04-13 1993-11-05 Nec Corp 半導体製造装置
JPH07122507A (ja) * 1993-10-27 1995-05-12 Kyocera Corp 半導体製造装置
JPH07176490A (ja) 1993-12-21 1995-07-14 Seiko Epson Corp Ｃｖｄ装置
KR200177325Y1 (ko) * 1997-11-24 2000-06-01 김영환 반도체 저압화학기상증착장비의 반응가스공급장치
JP2000173945A (ja) 1998-12-02 2000-06-23 Sharp Corp 半導体基板用縦型熱処理装置
JP2004273605A (ja) * 2003-03-06 2004-09-30 Hitachi Kokusai Electric Inc 基板処理装置
US7235138B2 (en) 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
JP5211464B2 (ja) * 2006-10-20 2013-06-12 東京エレクトロン株式会社 被処理体の酸化装置
JP2009152359A (ja) * 2007-12-20 2009-07-09 Elpida Memory Inc 縦型化学気相成長装置
JP5175130B2 (ja) 2008-04-15 2013-04-03 日本電信電話株式会社 通信方法、通信システム、認証通信方法、認証通信システム、サーバ装置、プログラム
JP2010147201A (ja) * 2008-12-18 2010-07-01 Hitachi Kokusai Electric Inc 基板処理装置
JP2013089818A (ja) 2011-10-19 2013-05-13 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
US8392617B1 (en) 2011-12-06 2013-03-05 Google Inc. Browsing context continuation across multiple devices
JP6125846B2 (ja) 2012-03-22 2017-05-10 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
KR101942206B1 (ko) * 2015-02-04 2019-01-24 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치 및 반응관
JP6737139B2 (ja) * 2016-11-14 2020-08-05 東京エレクトロン株式会社 ガスインジェクタ、及び縦型熱処理装置

Also Published As

Publication number Publication date
US11961715B2 (en) 2024-04-16
JPWO2020053996A1 (ja) 2021-09-09
KR102559937B1 (ko) 2023-07-27
JP7058338B2 (ja) 2022-04-21
WO2020053996A1 (ja) 2020-03-19
KR20210035287A (ko) 2021-03-31
US20210183670A1 (en) 2021-06-17

Similar Documents

Publication Publication Date Title
JP7464638B2 (ja) 基板処理装置、プラズマ生成装置、反応管、プラズマ生成方法、基板処理方法、半導体装置の製造方法およびプログラム
CN110890265B (zh) 基板处理装置、基板处理装置的电极以及半导体装置的制造方法
US10796934B2 (en) Substrate processing apparatus, method of manufacturing semiconductor device and electrode fixing part
CN111739779A (zh) 基板处理装置、半导体装置的制造方法以及存储介质
CN112640061B (zh) 基板处理装置、半导体装置的制造方法及存储介质
US20200399757A1 (en) Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium
CN111868896B (zh) 基板处理装置、半导体装置的制造方法及存储介质
CN217280688U (zh) 基板处理装置及基板保持部
TWI798819B (zh) 基板處理裝置、半導體裝置的製造方法及程式
TWI785510B (zh) 基板處理裝置、半導體裝置之製造方法及記錄媒體
JP7342138B2 (ja) 基板処理装置、プラズマ生成装置、半導体装置の製造方法、プラズマ生成方法およびプログラム
KR20230030657A (ko) 기판 처리 장치, 플라즈마 발광 장치, 반도체 장치의 제조 방법 및 프로그램
CN116057677A (zh) 半导体器件的制造方法、衬底处理装置及程序

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant