CN216958046U - Reliable low-consumption silver solar cell - Google Patents
Reliable low-consumption silver solar cell Download PDFInfo
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- CN216958046U CN216958046U CN202220039055.3U CN202220039055U CN216958046U CN 216958046 U CN216958046 U CN 216958046U CN 202220039055 U CN202220039055 U CN 202220039055U CN 216958046 U CN216958046 U CN 216958046U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The utility model provides a reliable low-silver-consumption solar cell, which comprises a silicon wafer, a light receiving surface PN junction layer on the front surface of the silicon wafer, a backlight surface PN junction layer on the back surface of the silicon wafer, an antireflection film layer covering the surfaces of the light receiving surface PN junction layer and the backlight surface PN junction layer, a barrier layer covering the surface of the antireflection film layer on the back surface of the solar cell, a metal conductive film layer and a metal protective layer which are sequentially arranged on the surface of the barrier layer, and grid lines covering the surface of a cell laminated structure without grid lines. The barrier layer is arranged on the surface of the antireflection film layer on the back of the solar cell, so that the diffusion of metal can be effectively blocked, the reliability of the low-consumption silver solar cell is effectively improved, and the selectivity of the ingredients of the antireflection film layer can be increased. Meanwhile, the reliable low-consumption silver solar cell is suitable for a cell with single-side power generation and a cell structure with double-side power generation, and meets the design requirements of the cell.
Description
Technical Field
The utility model relates to the field of solar cells, in particular to a reliable low-consumption silver solar cell.
Background
At present, grid lines of high-efficiency solar cells are manufactured in a silver paste printing mode, and the main component silver in the silver paste is used as one of noble metals, so that the cost of the grid lines is high. Taking a 166-sized solar cell as an example, the silver paste consumption is more than 200 mg/piece, which accounts for more than 60% of the non-silicon cost of the solar cell. In order to reduce the unit consumption of the silver paste, technologies such as MBB (moving bed boron), Smartwire and the like are adopted in the market for efficiency improvement and cost reduction, but the cost ratio of the silver paste is the largest. Therefore, how to reduce the consumption of silver paste is one of the main research and development directions for reducing the manufacturing cost of the high-efficiency solar cell.
In order to reduce the consumption of silver paste in the prior art, a cheaper metal such as copper or copper alloy is generally adopted to prepare a grid line to replace or partially replace the prior silver grid technology. However, metals such as copper are easy to diffuse, and can permeate into the PN junction structure of the solar cell to damage the cell structure, thereby affecting the reliability of the low-consumption silver solar cell.
Disclosure of Invention
The utility model aims to provide a reliable low-consumption silver solar cell, which can reduce the manufacturing cost of a cell electrode and ensure the reliability of the cell under the condition of not reducing the conversion efficiency of the cell, can be used for a cell structure with single-sided power generation and double-sided power generation, and can greatly reduce the silver consumption of a single cell, and the cell can obtain the silver paste consumption of less than 100 mg/cell by taking a 166-sized cell as an example.
In order to achieve the purpose, the utility model adopts the following technical scheme: the reliable low-silver-consumption solar cell comprises a silicon wafer, a light receiving surface PN junction layer on the front surface of the silicon wafer, a backlight surface PN junction layer on the back surface of the silicon wafer, an antireflection film layer covering the surfaces of the light receiving surface PN junction layer and the backlight surface PN junction layer, a barrier layer covering the surface of the antireflection film layer on the back surface of the solar cell, a metal conductive film layer and a metal protective layer which are sequentially arranged on the surface of the barrier layer, and grid lines covering the surface of a cell laminated structure without grid lines.
Preferably, the reliable low-consumption silver solar cell is a single-sided power generation solar cell or a double-sided power generation solar cell.
Compared with the prior art, the utility model has the following advantages:
1. the barrier layer is arranged on the surface of the antireflection film layer on the back surface of the solar cell piece, so that metal diffusion can be effectively blocked, and the reliability of the low-silver-consumption solar cell piece is effectively improved.
2. The barrier layer is arranged on the surface of the antireflection film layer on the back surface of the solar cell, so that the selectivity of components of the antireflection film layer can be increased.
3. The reliable low-consumption silver solar cell is suitable for a cell with single-side power generation and a cell structure with double-side power generation, and meets the design requirements of the cell.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the utility model and, together with the description, serve to explain the utility model and not to limit the utility model. In the drawings:
fig. 1 is a schematic view of a stacked structure of a reliable low-silver-consumption solar cell without a grid line.
Fig. 2 is a structural cross-sectional view of an embodiment of the reliable low-loss silver solar cell of the utility model, wherein the main grid structure of the light receiving surface is omitted and not shown.
Fig. 3 is a cross-sectional view of another embodiment of the reliable low-silver consumption solar cell of the present invention, in which the main grid structures of the light receiving surface and the backlight surface are omitted and not shown.
Description of reference numerals: 1 silicon chip, 2 light receiving surface PN junction layers, 3 backlight surface PN junction layers, 4 antireflection film layers, 5 barrier layers, 6 metal conducting layers, 7 metal protective layers, 8 front fine grid lines, 9 back fine grid lines
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and are not intended to limit the utility model.
As shown in fig. 1-3, the utility model provides a reliable silver-low consumption solar cell, which comprises a silicon wafer 1, a light receiving surface PN junction layer 2 on the front surface of the silicon wafer, a backlight surface PN junction layer 3 on the back surface of the silicon wafer, an antireflection film layer 4 covering the surfaces of the light receiving surface PN junction layer 2 and the backlight surface PN junction layer 3, a barrier layer 5 covering the surface of the antireflection film layer on the back surface of the solar cell, a metal conductive film layer 6 and a metal protective layer 7 sequentially arranged on the surface of the barrier layer 5, and grid lines covering the surface of the cell lamination structure on which no grid line is formed.
The reliable low-consumption silver solar cell is a single-side power generation solar cell or a double-side power generation solar cell.
The silicon wafer 1 is a silicon wafer with a pyramid structure formed on the surface after texturing.
The light receiving surface PN junction layer 2 comprises an amorphous silicon intrinsic layer and a doped layer of the light receiving surface.
The back-light surface PN junction layer 3 comprises an amorphous silicon intrinsic layer and a doping layer of the back-light surface.
The antireflection film layer 4 is a transparent conductive antireflection film layer, and can be one or more of TCO, ITO, IWO, IXO and ICO, the light receiving surface thickness of the antireflection film layer is 50-150nm, and the backlight surface thickness is 50-200 nm.
The barrier layer 5 is prepared by adopting a physical vapor deposition mode, the barrier layer can be a film layer of titanium, titanium nitride, titanium-tungsten alloy and the like, and the thickness of the barrier layer is 3-30 nm.
The metal conducting layer 6 is prepared by adopting a physical vapor deposition mode, the metal conducting layer 6 can be one or two of metal copper and copper alloy, nickel and nickel alloy, aluminum and the like, and the total thickness is 150-500 nm.
The metal protective layer 7 is ITO, IWO, ICO, AZO or Al2O3And one or two of nickel-copper alloy and the like, mainly for protecting the metal conducting layer from being oxidized, and controlling the total thickness to be 10-50 nm.
The single-sided power generation solar cell is characterized in that a front-side main grid line (not shown in a schematic diagram of fig. 2) and a front-side fine grid line 8 are formed on the surface of an antireflection film layer on the front side of the solar cell; and forming a back surface main grid line on the surface of the metal protection layer 7 on the back surface of the solar cell (the schematic diagram of fig. 2 is not shown).
The double-sided power generation solar cell is characterized in that a front-side main grid line (not shown in the schematic diagram of fig. 2) and a front-side fine grid line 8 are formed on an antireflection film layer on the front side of the solar cell; and a back main grid line (not shown in the schematic diagram of fig. 2) and a back fine grid line 9 formed on the surface of the metal protection layer 7 on the back surface of the solar cell.
The manufacturing method of the present invention is described in detail below with reference to the drawings and examples of the specification:
the first embodiment is as follows:
s01, manufacturing the solar cell with the PN junction layer structure: texturing the front surface and the back surface of the silicon wafer to form a pyramid-shaped textured surface on the surface of the silicon wafer to obtain a textured silicon wafer 1; an amorphous silicon intrinsic layer and a doping layer are deposited on the surface of the light receiving surface of the textured silicon wafer 1 to form a light receiving surface PN junction layer 2, and an amorphous silicon intrinsic layer and a doping layer are deposited on the back surface to form a back surface PN junction layer 3.
S02, preparing antireflection film layers 4 on the surfaces of the light receiving surface PN junction layer and the backlight surface PN junction layer respectively; wherein, the antireflection film layer 4 is a transparent conductive antireflection film layer. The transparent conductive antireflection layer is TCO with transparent conductive performance, such as ITO, IWO, IXO, ICO, etc., and has an illuminated surface thickness of 50-150nm and a backlight surface thickness of 50-200 nm.
S03, preparing a barrier layer 5 on the antireflection film layer on the back surface of the battery piece: the barrier layer 5 is prepared by adopting a physical vapor deposition mode, the barrier layer 5 can be one of titanium, titanium nitride and a titanium-tungsten alloy film layer, and the thickness of the barrier layer is 3-30 nm.
S04, physical vapor depositionSequentially preparing a metal conductive layer 6 and a metal protective layer 7 on the barrier layer 5 in a deposition mode; the metal conducting layer 6 can be one or two of metal copper and copper alloy, nickel and nickel alloy, aluminum and the like, and the total thickness is 150-500 nm; the metal protective layer 7 is ITO, IWO, ICO, AZO or Al2O3And one or two of nickel-copper alloy and the like, mainly for protecting the metal conducting layer from being oxidized, and controlling the total thickness to be 10-50 nm. At this point, the battery stack structure shown in the schematic diagram of fig. 1 is completed;
s05, preparing grid lines on the front side and the back side of the battery laminated structure to form a single-side power generation battery piece: firstly, printing a silver paste main grid line pattern on the backlight surface of a battery piece, and performing surface drying; the bus bars are not shown in the schematic; and then, printing a silver paste electrode grid line pattern on the light receiving surface of the cell by using a printing mode, wherein the silver paste electrode grid line pattern comprises a main grid line and a fine grid line 8, the main grid line and the fine grid line can be printed and formed together, but the main grid line and the fine grid line can also be printed separately for protecting the line type, the height of the grid line and the like, surface drying and curing operation of the silver paste grid line are required at the same time, and the manufacture of the main grid line on the backlight surface, the main grid line on the light receiving surface and the fine grid line 8 is completed to obtain the manufacture of the single-sided cell shown in fig. 2.
Example two:
the present embodiment is different from the first embodiment only in that: s05, printing a back fine grid pattern on the back surface of the battery piece, and printing a silver paste main grid line pattern and surface drying after surface drying; the back fine grid pattern can adopt silver paste slurry or conductive slurry; the bus bars are shown in the schematic not shown; secondly, printing a silver paste electrode grid line pattern on the light receiving surface of the cell by a printing mode, wherein the silver paste electrode grid line pattern comprises a main grid line and a thin grid line 8, the main grid line and the thin grid line can be printed and formed together, but the silver paste electrode grid line pattern and the thin grid line can be printed separately for protecting the line type, the height of the grid line and the like, and surface drying and curing operation of the silver paste grid line are required; finally, etching the back surface of the battery piece, and removing the metal protective layer and the metal conducting layer at the position without the fine grid pattern on the back surface; the etching method may employ one of horizontal transfer etching and water rinsing; and (3) finishing the manufacture of the light-receiving surface main grid lines and the thin grid lines 8 and the backlight surface main grid lines and the thin grid lines 9 to obtain the manufacture of the double-sided battery piece shown in the figure 3, wherein the double-sided rate of the battery piece is between 30 and 60 percent.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the utility model, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A reliable low-consumption silver solar cell piece is characterized in that: the solar cell comprises a silicon chip, an illuminated surface PN junction layer on the front surface of the silicon chip, a backlight surface PN junction layer on the back surface of the silicon chip, an antireflection film layer covering the surfaces of the illuminated surface PN junction layer and the backlight surface PN junction layer, a barrier layer covering the surface of the antireflection film layer on the back surface of the solar cell, a metal conductive film layer and a metal protective layer which are sequentially arranged on the surface of the barrier layer, and grid lines covering the surface of a cell laminated structure without grid lines.
2. The reliable low-silver consumption solar cell piece according to claim 1, characterized in that: the reliable low-consumption silver solar cell is a single-side power generation solar cell or a double-side power generation solar cell.
3. The reliable low-silver consumption solar cell piece according to claim 1, characterized in that: the silicon wafer is a silicon wafer with a pyramid structure formed on the surface after texturing.
4. The reliable low-silver consumption solar cell piece according to claim 1, characterized in that: the light receiving surface PN junction layer comprises an amorphous silicon intrinsic layer and a doping layer of the light receiving surface; the back-light surface PN junction layer comprises an amorphous silicon intrinsic layer and a doping layer of the back-light surface.
5. The reliable low-silver consumption solar cell piece according to claim 1, characterized in that: the antireflection film layer is a transparent conductive antireflection film layer and can be one or more of TCO, ITO, IWO, IXO and ICO; the light receiving surface of the antireflection film layer is 50-150nm in thickness, and the backlight surface of the antireflection film layer is 50-200nm in thickness.
6. The reliable low-silver consumption solar cell piece according to claim 1, characterized in that: the barrier layer is prepared by adopting a physical vapor deposition mode, can be a film layer of titanium, titanium nitride, titanium-tungsten alloy and the like, and has the thickness of 3-30 nm.
7. The reliable low-silver consumption solar cell piece according to claim 1, characterized in that: the metal conductive film layer is prepared by adopting a physical vapor deposition mode, the metal conductive film layer can be one or two of metal copper and copper alloy, nickel and nickel alloy, aluminum and the like, and the total thickness is 150-500 nm.
8. The reliable low-silver consumption solar cell piece according to claim 1, characterized in that: the metal protective layer is ITO, IWO, ICO, AZO, Al2O3One or two of nickel-copper alloy and the like, and the total thickness is controlled to be 10-50 nm.
9. The reliable low-consumption silver solar cell piece according to claim 2, characterized in that: the single-sided power generation solar cell is characterized in that a front-side main grid line and a front-side fine grid line are formed on the surface of an antireflection film layer on the front side of the solar cell; and forming a back main grid line on the surface of the metal protection layer on the back of the solar cell.
10. The reliable low-consumption silver solar cell piece according to claim 2, characterized in that: the double-sided power generation solar cell is characterized in that a front-side main grid line and a front-side fine grid line are formed on an antireflection film layer on the front side of the solar cell; and a back main grid line and a back fine grid line formed on the surface of the metal protection layer on the back of the solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220039055.3U CN216958046U (en) | 2022-01-07 | 2022-01-07 | Reliable low-consumption silver solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220039055.3U CN216958046U (en) | 2022-01-07 | 2022-01-07 | Reliable low-consumption silver solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN216958046U true CN216958046U (en) | 2022-07-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220039055.3U Active CN216958046U (en) | 2022-01-07 | 2022-01-07 | Reliable low-consumption silver solar cell |
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| CN (1) | CN216958046U (en) |
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- 2022-01-07 CN CN202220039055.3U patent/CN216958046U/en active Active
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