CN115084299A - P-type solar cell, manufacturing method thereof, cell module and photovoltaic system - Google Patents
P-type solar cell, manufacturing method thereof, cell module and photovoltaic system Download PDFInfo
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- CN115084299A CN115084299A CN202210716869.0A CN202210716869A CN115084299A CN 115084299 A CN115084299 A CN 115084299A CN 202210716869 A CN202210716869 A CN 202210716869A CN 115084299 A CN115084299 A CN 115084299A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000002161 passivation Methods 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 38
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052796 boron Inorganic materials 0.000 claims abstract description 33
- 229920005591 polysilicon Polymers 0.000 claims abstract description 29
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 230000005641 tunneling Effects 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 101
- 229910052782 aluminium Inorganic materials 0.000 claims description 101
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 100
- 229910052709 silver Inorganic materials 0.000 claims description 100
- 239000004332 silver Substances 0.000 claims description 100
- 238000000034 method Methods 0.000 claims description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 23
- 238000009713 electroplating Methods 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 10
- 239000002002 slurry Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 20
- 239000010410 layer Substances 0.000 description 145
- 230000000694 effects Effects 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 239000000243 solution Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000007738 vacuum evaporation Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/041—Provisions for preventing damage caused by corpuscular radiation, e.g. for space applications
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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Abstract
The application is applicable to the technical field of solar cells, and provides a P-type solar cell, a manufacturing method of the P-type solar cell, a cell module and a photovoltaic system. The manufacturing method of the P-type solar cell comprises the following steps: providing a P-type silicon wafer; etching and cleaning the P-type silicon wafer; preparing a tunneling oxide layer on the first surface of the P-type silicon wafer; preparing a doped polycrystalline silicon layer on the tunneling oxide layer; preparing an aluminum oxide layer on the second surface of the P-type silicon wafer; preparing a first passivation layer on the doped polysilicon layer; preparing a second passivation layer on the aluminum oxide layer; locally covering a boron source layer on the second passivation layer; scanning a boron source layer by using laser to form a boron doped layer and simultaneously forming laser grooving; cleaning the boron doped layer; forming a first electrode on the first surface, wherein the first electrode passes through the first passivation layer to contact the doped polycrystalline silicon layer; and forming a second electrode on the second surface, wherein the second electrode is contacted with the boron doped layer through the groove opening region. In this way, both sides can be made radiation resistant and the laser induced lattice damage repaired.
Description
Technical Field
The application belongs to the technical field of solar cells, and particularly relates to a P-type solar cell, a manufacturing method of the P-type solar cell, a cell module and a photovoltaic system.
Background
Solar cell power generation is a sustainable clean energy source that can convert sunlight into electrical energy using the photovoltaic effect of semiconductor p-n junctions.
In the related art, a silicon nitride layer is generally provided on a solar cell, or a silicon oxide layer and a silicon nitride layer are provided on a solar cell, thereby reducing reflection of sunlight. However, the attenuation of the solar cell is too high in environments with strong ultraviolet radiation, such as plateaus, seas or outer spaces, and a high failure risk is caused.
Therefore, how to improve the radiation resistance effect of the solar cell becomes a problem to be solved urgently.
Disclosure of Invention
The application provides a P-type solar cell, a manufacturing method thereof, a cell module and a photovoltaic system, and aims to solve the problem of how to improve the radiation resistance effect of the solar cell.
In a first aspect, the present application provides a method for manufacturing a P-type solar cell, including:
providing a P-type silicon wafer;
etching and cleaning the P-type silicon wafer;
preparing a tunneling oxide layer on the first surface of the P-type silicon wafer;
preparing a doped polycrystalline silicon layer on the tunneling oxide layer;
preparing an aluminum oxide layer on the second surface of the P-type silicon wafer;
preparing a first passivation layer on the doped polysilicon layer;
preparing a second passivation layer on the aluminum oxide layer;
locally covering a boron source layer on the second passivation layer;
scanning a boron source layer by using laser to form a boron doped layer and simultaneously forming laser grooving;
cleaning the boron doped layer;
forming a first electrode on the first surface, wherein the first electrode contacts the doped polycrystalline silicon layer through the first passivation layer;
and forming a second electrode on the second surface, wherein the second electrode contacts the boron doped layer through a groove opening region.
Optionally, before the step of forming the first electrode on the first surface, the manufacturing method includes:
performing laser film opening on the first passivation layer;
forming a first electrode on the first face, comprising:
forming the first electrode by electroplating copper;
forming a second electrode on the second surface, including
The second electrode is formed by electroplating copper.
Optionally, forming a first electrode on the first face includes:
forming the first electrode on the first surface by using silver paste;
forming a second electrode on the second face, comprising:
the second electrode is formed by electroplating copper.
Optionally, forming a first electrode on the first face includes:
forming the first electrode on the first surface by using silver paste;
forming a second electrode on the second face, comprising:
and forming the second electrode on the second surface by using aluminum paste.
Optionally, the second electrode includes a fine grid, a main grid and a pad, the fine grid is an aluminum conductor, and the second electrode is formed on the second surface by using aluminum paste, including:
forming the aluminum conductor on the second surface by using aluminum paste;
forming the main grid and the pad on the aluminum conductor, wherein the main grid comprises a first silver conductive part, and/or the pad comprises a second silver conductive part.
Optionally, the second electrode includes an aluminum fine grid and a silver fine grid, and the forming the second electrode on the second surface using aluminum paste includes:
forming the aluminum fine grid on the second surface by using aluminum slurry, wherein the aluminum fine grid is in contact with the P-type silicon wafer through a slotted region;
and forming the silver fine grid on the aluminum fine grid, wherein the aluminum fine grid and the silver fine grid form a composite fine grid.
Optionally, forming the silver fine grid on the aluminum fine grid includes:
and covering the top surface and the side surface of the aluminum fine grid with the silver fine grid.
Optionally, the aluminum fine grid is covered by 1/2 a thickness less than the thickness of the silver fine grid.
Optionally, the difference between the width of the silver fine grid and the width of the aluminum fine grid is 5 μm to 20 μm.
Optionally, the silver fine grid has a thickness of 5 μm to 10 μm.
Optionally, the thickness of the aluminum fine grid is 10 μm to 40 μm.
In a second aspect, the present application provides a P-type solar cell, which is manufactured by using any one of the above methods for manufacturing a P-type solar cell.
In a third aspect, the present application provides a P-type solar cell comprising:
a P-type silicon wafer;
the tunneling oxide layer, the doped polysilicon layer, the first passivation layer and the first electrode are sequentially stacked on the first surface of the P-type silicon wafer, and the first electrode penetrates through the first passivation layer to be in contact with the doped polysilicon layer;
the aluminum oxide layer, the second passivation layer and the second electrode are sequentially stacked on the second surface of the P-type silicon wafer, a slotted region is formed in the aluminum oxide layer and the second passivation layer, a boron doping layer is formed in the slotted region, and the second electrode penetrates through the slotted region and contacts with the boron doping layer.
Optionally, the first electrode and the second electrode are both electroplated copper electrodes.
Optionally, the first electrode is a silver electrode and the second electrode is an electroplated copper electrode.
Optionally, the first electrode is a silver electrode and the second electrode comprises an aluminum electrode.
Optionally, the second electrode is a composite fine grid, the composite fine grid comprises an aluminum fine grid and a silver fine grid, the aluminum fine grid is in contact with the P-type silicon wafer through a slotted region, and the silver fine grid is arranged on one side of the aluminum fine grid, which is far away from the P-type silicon wafer.
Optionally, the silver fine grid covers the top surface and the side surface of the aluminum fine grid.
Optionally, the difference between the width of the silver fine grid and the width of the aluminum fine grid is 5 μm to 20 μm.
Optionally, the silver fine grid has a thickness of 5 μm to 10 μm.
Optionally, the thickness of the aluminum fine grid is 10 μm to 40 μm.
In a third aspect, the present application provides a cell module comprising the P-type solar cell of any of the above.
In a fourth aspect, the present application provides a photovoltaic system including the above-mentioned cell assembly.
According to the P-type solar cell, the manufacturing method of the P-type solar cell, the cell module and the photovoltaic system, the doped polycrystalline silicon layer is arranged on the first surface, and the aluminum oxide layer is arranged on the second surface, so that the manufactured P-type solar cell can resist radiation on two sides, and attenuation caused by radiation is reduced. Meanwhile, laser grooving and laser doping have certain damage to the cell, and the crystal lattice damage caused by laser can be repaired in the process of forming the electrode. Therefore, the cost for manufacturing the P-type solar cell is low, and the photoelectric conversion efficiency is high.
Drawings
Fig. 1 is a schematic flow chart illustrating a method for manufacturing a P-type solar cell according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a P-type solar cell according to an embodiment of the present application;
fig. 3 is a schematic flow chart illustrating a method for manufacturing a P-type solar cell according to an embodiment of the present application;
fig. 4 is a schematic flow chart illustrating a method for manufacturing a P-type solar cell according to an embodiment of the present application;
fig. 5 is a schematic flow chart illustrating a method for manufacturing a P-type solar cell according to an embodiment of the present application;
fig. 6 is a schematic flow chart illustrating a method for manufacturing a P-type solar cell according to an embodiment of the present application;
fig. 7 is a schematic flow chart illustrating a method for manufacturing a P-type solar cell according to an embodiment of the present application;
FIG. 8 is a schematic structural diagram of a P-type solar cell according to an embodiment of the present application;
description of the main element symbols:
the solar cell comprises a P-type solar cell 10, a P-type silicon wafer 101, a tunneling oxide layer 11, a doped polycrystalline silicon layer 12, a first passivation layer 13, a first electrode 14, an aluminum oxide layer 15, a second passivation layer 16, a second electrode 17, an aluminum fine grid 171, a silver fine grid 172 and a boron doped layer 189.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The solar cell in the related art has poor radiation resistant effect, and the doped polycrystalline silicon layer and the aluminum oxide layer are arranged, so that the solar cell can resist radiation on two sides, and the attenuation caused by radiation is reduced. Meanwhile, laser grooving and laser doping have certain damage to the cell, and the crystal lattice damage caused by laser can be repaired in the process of forming the electrode. Therefore, the cost for manufacturing the P-type solar cell is low, and the photoelectric conversion efficiency is high.
Example one
Referring to fig. 1 and fig. 2, a method for manufacturing a P-type solar cell 10 of the present embodiment includes:
step S11: providing a P-type silicon wafer 101;
step S12: etching and cleaning the P-type silicon wafer 101;
step S13: preparing a tunneling oxide layer 11 on a first surface of a P-type silicon wafer 101;
step S14: preparing a doped polysilicon layer 12 on the tunneling oxide layer 11;
step S15: preparing an alumina layer 15 on the second surface of the P-type silicon wafer 101;
step S16: preparing a first passivation layer 13 on the doped polysilicon layer 12;
step S17: preparing a second passivation layer 16 on the alumina layer 15;
step S18: locally overlying the second passivation layer 16 a boron source layer;
step S19: scanning a boron source layer by using laser to form a boron doping layer 189 and simultaneously forming laser grooving;
step S20: cleaning the boron doped layer 189;
step S22: forming a first electrode 14 on the first surface, the first electrode 14 contacting the doped polysilicon layer 12 through the first passivation layer 13;
step S23: a second electrode 17 is formed on the second surface, and the second electrode 17 contacts the boron doped layer 189 through the trench region.
In the method for manufacturing the P-type solar cell 10 according to the embodiment of the present application, the doped polysilicon layer 12 is disposed on the first surface, and the aluminum oxide layer 15 is disposed on the second surface, so that the manufactured P-type solar cell 10 can resist radiation on both surfaces, thereby reducing attenuation caused by radiation. Meanwhile, laser grooving and laser doping have certain damage to the cell, and the crystal lattice damage caused by laser can be repaired in the process of forming the electrode. Thus, the P-type solar cell 10 is manufactured at a low cost and has high photoelectric conversion efficiency.
Specifically, in step S12, the first side may be planarized by an etch clean, thereby making the doped polysilicon layer 12 well passivated. The texture surface can also be etched and cleaned, so that the light trapping effect is realized, the reflection loss of sunlight is reduced, and the light facing surface can be a first surface and/or a second surface.
Specifically, in step S13, the oxide layer 11 may be formed by thermal oxidation, chemical oxidation, PECVD, or ALD. The thickness of the tunneling oxide layer 11 is 0.5nm-5 nm. For example, 0.5nm, 1nm, 3nm, 4nm, and 5 nm. The thickness of the tunnel oxide layer 11 is preferably 0.7nm to 1.5 nm. For example, 0.7nm, 1nm, 1.2nm, 1.5 nm.
Specifically, in step S13, the tunnel oxide layer 11 includes one or more of a silicon oxide layer and an aluminum oxide layer 15. Preferably, the tunnel oxide layer 11 is a silicon oxide layer.
Further, the tunnel oxide layer 11 may be prepared by thermal oxidation and solution oxidation. Furthermore, in the case of preparing the tunnel oxide layer 11 by thermal oxidation, oxygen and nitrogen may be introduced at 800 ℃ and 500 ℃ for thermal oxidation for 5-60min, so as to form a silicon oxide layer on the P-type silicon wafer 101. In the case of preparing the tunnel oxide layer 11 by solution oxidation, H in a solution ratio of 4:1 to 1:4 may be used 2 SO 4 And H 2 O 2 The mixed solution of the solutions is subjected to oxidation preparation, thereby forming a silicon oxide layer on the P-type silicon wafer 101.
Further, the tunnel oxide layer 11 may also be prepared by PECVD.
Specifically, in step S14, the doped polysilicon layer 12 is 20nm to 400nm thick. For example, 20nm, 50nm, 100nm, 300nm, 400 nm. The doped polysilicon layer 12 is preferably 80nm to 180nm thick. For example, 80nm, 100nm, 120nm, 150nm, 180 nm.
Specifically, in step S14, the tunneling layer may be covered with the doped polysilicon layer 12 entirely, and the first electrode 14 burns through the first passivation layer 13 to contact the doped polysilicon layer 12 when the P-type silicon wafer 101 is sintered. Thus, the doped polysilicon layer 12 is covered on the whole surface, and the electrode does not penetrate through, so that the radiation-resistant effect is better. Moreover, since the first electrode 14 is in contact with the polysilicon, the passivation effect is better.
It is understood that in other embodiments, the doped polysilicon layer 12 may also be covered in a partial region of the tunneling layer.
Specifically, in step S14, the doped polysilicon layer 12 may be a phosphorus-doped monocrystalline silicon layer with a sheet resistance <60 ohm/squ. In this manner, a smaller number of first electrodes 14 may be used, thereby saving cost.
Specifically, in step S14, the doped polysilicon layer 12 may be prepared on the tunnel oxide layer 11 by using a PECVD (Plasma Enhanced Chemical Vapor Deposition) apparatus or an LPCVD (Low pressure Chemical Vapor Deposition) apparatus or a PVD (Physical Vapor Deposition) apparatus. Therefore, the temperature required by the deposition by adopting the PECVD equipment is lower, energy can be saved, and the minority carrier lifetime attenuation in the silicon wafer caused by high temperature can be reduced. The LPCVD equipment has better step coverage capability and higher deposition rate and output. PVD is chain transmission, so that the yield is higher and the cost is lower when a thin film is deposited. Thus, the quality of the battery is improved, and the cost is reduced.
Specifically, in step S15, the alumina layer 15 has a thickness of 1nm to 30 nm. For example, 1nm, 2nm, 10nm, 15nm, 28nm, and 30 nm. The alumina layer 15 is preferably 2nm to 6nm thick. For example, 2nm, 3nm, 4nm, 5nm, and 6 nm.
Specifically, in step S15, the aluminum oxide layer 15 may be prepared on the second side of the P-type silicon wafer 101 using a PECVD apparatus, an ALD (Atomic layer deposition) apparatus, or a PVD apparatus. Therefore, the temperature required by the PECVD equipment for deposition is lower, energy can be saved, and the minority carrier lifetime attenuation in the silicon wafer caused by high temperature can be reduced. The film layer manufactured by the ALD device is good in uniformity, compact and free of holes, and the thickness of the film is accurately controlled. Thus, the quality of the battery is improved, and the cost is reduced.
Note that step S16 may be before or after step S15. The flow in the figures is merely an example and is not a limitation on the order of the steps. The order of the steps can be disturbed in a rational manner.
Specifically, in step S16, the first passivation layer 13 may be prepared by ALD, PECVD, PVD, or the like. The thickness of the first passivation layer 13 is 10nm to 200 nm. For example, 10nm, 50nm, 100nm, 150nm, 200 nm. The thickness of the first passivation layer 13 is preferably 50nm to 100 nm. For example, 50nm, 60nm, 80nm, 100 nm.
Specifically, in step S16, the first passivation layer 13 includes a first silicon nitride layer, and step S16 includes: a first silicon nitride layer is prepared on the doped polysilicon layer 12 using PECVD equipment.
Specifically, in step S17, the second passivation layer 16 may be prepared by ALD, PECVD, PVD, or the like. The thickness of the second passivation layer 16 is 10nm to 200 nm. For example, 10nm, 50nm, 100nm, 150nm, 200 nm. Preferably 50nm to 100 nm. For example, 50nm, 60nm, 80nm, 100 nm.
Specifically, in step S17, the second passivation layer 16 includes a second silicon nitride layer, and step S17 includes: a second silicon nitride layer is prepared on the aluminum oxide layer 15 using a PECVD apparatus.
Therefore, the silicon nitride layer is used for antireflection, so that the loss of sunlight can be reduced, the utilization rate of the sunlight is improved, and the photoelectric conversion efficiency is improved. Meanwhile, hydrogen ions can be combined with dangling bonds, recombination centers are reduced, and a passivation effect is achieved. Moreover, the PECVD equipment ensures that the silicon nitride layer has fewer pinholes and is not easy to crack, thereby being beneficial to improving the film forming quality of the silicon nitride layer.
Further, the silicon nitride layer may be one or more layers. In the case where the silicon nitride layers are multilayered, a refractive index gradient may be formed between adjacent two silicon nitride layers. Therefore, gradient extinction is realized through the refractive index gradient, and the utilization rate of sunlight is further improved.
Specifically, in step S18, a spin coating method may be used to cover the boron source on the region to be doped on the second passivation layer 16 by screen printing, spin coating, or the like, and then baking, or a CVD or PVD method may be used to form the boron source layer.
Specifically, in step S18, the thickness of the boron source layer is less than 10 μm. For example, 10 μm, 9 μm, 8 μm, and 7 μm. Preferably, the thickness of the boron source layer is less than 3 μm. For example, 3 μm, 2 μm, 1 μm, 0.5 μm.
Specifically, in step S19, the pulse width of the laser light>1ns or a continuous laser. The scanning speed is 5-70 m/s. Forming an energy density of greater than 0.1 muJ/cm on a boron source 2 Laser irradiation of (2). Thus, a boron doped layer 189 is formed to a depth greater than 0.2 um.
Specifically, in step S19, a laser may be used to open dot-shaped holes on the second passivation layer 16 and the aluminum oxide layer 15 of the P-type silicon wafer 101. Further, the diameter of the dot-shaped holes is 25 μm to 45 μm. For example, 25 μm, 27 μm, 30 μm, 32 μm, 35 μm, 40 μm, and 45 μm. Further, the distance between the adjacent dot-shaped holes in the length direction of the fine grid is 400-800 μm. For example, 400 μm, 420 μm, 500 μm, 600 μm, 700 μm, 780 μm, 800 μm. Further, the interval between the adjacent dot-shaped holes in the width direction of the fine gate is 500 μm to 1000 μm. For example, 500. mu.m, 520. mu.m, 600. mu.m, 800. mu.m, 980. mu.m, 1000. mu.m.
Specifically, in step S19, a laser may be used to open discontinuous linear grooves in the second passivation layer 16 and the aluminum oxide layer 15 of the P-type silicon wafer 101. Further, the length of the linear groove is 0.1mm-0.5 mm. For example, 0.1mm, 0.2mm, 0.3mm, 0.4mm, 0.5 mm. Further, the width of the linear groove is 25 μm to 45 μm. For example, 25 μm, 28 μm, 30 μm, 35 μm, 38 μm, 40 μm, and 45 μm. Further, the distance between the adjacent linear grooves in the length direction of the fine grid is 0.2mm-1 mm. For example, 0.2mm, 0.4mm, 0.8mm, 1 mm. Further, the interval between the adjacent linear grooves in the width direction of the fine grid is 0.5mm-1 mm. For example, 0.5mm, 0.6mm, 0.8mm, 1 mm.
Specifically, in step S19, a continuous linear groove may be opened in the second passivation layer 16 and the alumina layer 15 of the P-type silicon wafer 101 by using a laser. Specifically, the width of the groove is 2 μm to 100 μm. Examples thereof include 2 μm, 5 μm, 8 μm, 15 μm, 30 μm, 70 μm and 100 μm. Preferably, the width of the grooved region is 10 μm to 35 μm. For example, 10 μm, 12 μm, 15 μm, 20 μm, 28 μm, 30 μm, 35 μm.
Specifically, in step S20, washing is performed using an alkaline chemical solution. The alkaline chemical solution is, for example, a KOH chemical solution, a NaOH chemical solution, or a TMAH chemical solution. Alkaline chemicals, hydrogen peroxide, and the like may also be used for cleaning. Specifically, in step S22, the first electrode 14 may be formed using screen printing. Therefore, the efficiency and the precision of electrode manufacturing are higher, and the quality of the battery is improved. In other embodiments, the first electrode 14 can be formed by electroplating copper, sputtering, vacuum evaporation, or the like.
Specifically, in step S22, the width of the first electrode 14 is 2 μm to 400 μm. For example, 2 μm, 10 μm, 100 μm, 300 μm, 400 μm. The width of the first electrode 14 is preferably 10 μm to 70 μm. For example, 10 μm, 20 μm, 50 μm, 65 μm, and 70 μm.
Specifically, in step S22, the thickness of the first electrode 14 is 2 μm to 40 μm. For example, 2 μm, 10 μm, 15 μm, 30 μm, 40 μm. The thickness of the first electrode 14 is preferably 5 μm to 20 μm. For example, 5 μm, 10 μm, 15 μm, and 20 μm.
Specifically, in step S23, the second electrode 17 may be formed using screen printing. Therefore, the efficiency and the precision of electrode manufacturing are higher, and the quality of the battery is improved. In other embodiments, the second electrode 17 may be formed by electroplating copper, sputtering, vacuum evaporation, or the like.
Specifically, in step S23, the width of the second electrode 17 is 2 μm to 400 μm. For example, 2 μm, 10 μm, 100 μm, 300 μm, 400 μm. The width of the second electrode 17 is preferably 10 μm to 70 μm. For example, 10 μm, 20 μm, 50 μm, 65 μm, and 70 μm.
Specifically, in step S23, the thickness of the second electrode 17 is 2 μm to 40 μm. For example, 2 μm, 10 μm, 15 μm, 30 μm, and 40 μm. The thickness of the second electrode 17 is preferably 5 μm to 20 μm. For example, 5 μm, 10 μm, 15 μm, and 20 μm.
In particular, the amount of the solvent to be used,
referring to fig. 3, optionally, before step S22, the manufacturing method includes:
step S21: performing laser film opening on the first passivation layer 13;
step S22 includes:
step S221: forming the first electrode 14 by electroplating copper;
step S23 includes
Step S231: the second electrode 17 is formed by electroplating copper.
Therefore, through the copper electroplating process, copper electrodes are formed on the two sides of the P-type silicon wafer 101, the conductive effect is good, and the cost can be reduced compared with the cost of adopting silver electrodes.
Specifically, nickel, chromium, titanium, tungsten electrodes may be used as seed layers or protective layers for the electroplated copper electrodes.
Specifically, step S21 may be performed simultaneously with step S19. Therefore, double-sided grooving can be realized while laser doping is carried out, and the efficiency is higher. It is understood that step S21 and step S19 may be performed in steps.
Specifically, step S221 and step S231 may be performed simultaneously. Therefore, the double-sided copper electrode can be prepared simultaneously, and the efficiency is higher. It is understood that step S221 and step S231 may also be performed in steps. The order of the steps is not limited herein.
Referring to fig. 4, optionally, step S22 includes:
step S222: forming a first electrode 14 on the first surface using silver paste;
step S23 includes
Step S232: the second electrode 17 is formed by electroplating copper.
Thus, the first electrode 14 is a silver electrode, and the second electrode 17 is a copper electrode, so that the conductive effect is better, and the cost can be reduced compared with a double-sided silver electrode.
Specifically, in step S222, a silver paste may be screen-printed to form the first electrode 14. Therefore, the technical control difficulty of double-sided electroplating can be reduced to a certain extent. It will be appreciated that the silver paste after sintering forms the first electrode 14, burning through the first passivation layer 13, contacting the doped polysilicon layer 12.
Specifically, in step S232, nickel, chromium, titanium, tungsten electrodes may be used as a seed layer or a protective layer of the electroplated copper electrode.
Referring to fig. 5, optionally, step S22 includes:
step S223: forming a first electrode 14 on the first surface using silver paste;
step S23 includes
Step S233: the second electrode 17 is formed on the second surface using aluminum paste.
Therefore, the conductive effect is better, and the cost can be reduced compared with a double-sided silver electrode.
Specifically, in step S223, a silver paste may be screen-printed to form the first electrode 14. In this way, the efficiency and accuracy of fabricating the first electrode 14 are both higher.
Specifically, in step S233, an aluminum paste may be screen-printed to form the second electrode 17. Thus, the efficiency and accuracy of manufacturing the second electrode 17 are higher.
It is understood that the first electrode 14 and the second electrode 17 may be formed by sintering after the slurry is applied.
Referring to fig. 6, optionally, the second electrode 17 includes a fine grid, a main grid and a pad, the fine grid is an aluminum conductor, and the step S233 includes:
step S2331: forming an aluminum conductor on the second surface by using aluminum paste;
step S2332: a main grid and a bonding pad are formed on the aluminum conductor, the main grid including a first silver conductive portion, and/or the bonding pad including a second silver conductive portion.
In this manner, at least one of the main grid and the bonding pad includes a silver conductive portion, which facilitates soldering when manufacturing the battery assembly.
Specifically, in step S2331, an aluminum conductor may be formed by screen printing; the aluminum conductor can also be formed by sputtering, vacuum evaporation and other processes.
Specifically, in step S2332, the master-gate includes a first silver-conductive portion and the pad includes a second silver-conductive portion; the main grid can also comprise a first silver conductive part, and the bonding pad does not comprise a second silver conductive part; it is also possible that the main gate does not include a first silver conductive portion and the pad includes a second silver conductive portion. Further, in the case where the main grid includes the first silver conductive portion, a part of the main grid may be the first silver conductive portion, or the entire main grid may be the first silver conductive portion. When the pad includes the second silver conductive portion, a portion of the pad may be the second silver conductive portion, or the pad may be entirely the second silver conductive portion.
Specifically, in step S2332, the silver conductive portions may be formed by screen printing; the silver conductive portion may be formed by sputtering, vacuum evaporation, or the like.
Referring to fig. 7 and 8, optionally, the second electrode 17 includes an aluminum fine grid 171 and a silver fine grid 172, and step S233 includes:
step S2333: forming an aluminum fine grid 171 on the second surface by using aluminum paste, wherein the aluminum fine grid 171 is in contact with the P-type silicon wafer 101 through a slotted region;
step S2334: silver fine grids 172 are formed on the aluminum fine grids 171, and the aluminum fine grids 171 and the silver fine grids 172 form composite fine grids.
In this way, ohmic contact is formed by autodoping of the aluminum fine grid 171, and current is efficiently drawn out by the strong conductivity of the silver fine grid 172. Also, since the aluminum fine grid 171 serves as a contact electrode, the thickness of the silver fine grid 172 can be thinner. Therefore, the composite fine grid has low cost and simple process while the photoelectric conversion efficiency is ensured.
Specifically, in step S2333, an aluminum fine grid 171 may be formed on the second face using an aluminum paste by screen printing. Therefore, the efficiency and the precision of manufacturing the aluminum fine grid 171 are higher, and the quality of the battery is improved. In other embodiments, the aluminum fine grid 171 can be formed by sputtering, vacuum evaporation, or the like.
Specifically, in step S2334, the silver fine grid 172 may be formed by screen printing. Therefore, the efficiency and the precision of manufacturing the silver fine grid 172 are higher, and the quality of the battery is improved. In other embodiments, the silver fine grid 172 may be formed by sputtering, vacuum evaporation, or the like.
Optionally, step S2334 includes: the silver fine grids 172 cover the top and side surfaces of the aluminum fine grids 171. In this way, the contact area between the silver fine grids 172 and the aluminum fine grids 171 is large, so that the conductive effect between the silver fine grids 172 and the aluminum fine grids 171 is better.
It is understood that in other embodiments, the silver fine grid 172 may cover only the top surface of the aluminum fine grid 171, and not the side surface of the aluminum fine grid 171; the silver fine grid 172 may cover only the side surfaces of the aluminum fine grid 171 instead of the top surface of the aluminum fine grid 171.
Specifically, the silver fine grids 172 entirely cover the top surfaces of the aluminum fine grids 171, and entirely cover the side surfaces of the aluminum fine grids 171. In this way, the contact area between the silver fine grids 172 and the aluminum fine grids 171 is made larger, so that the electric conduction effect between the silver fine grids 172 and the aluminum fine grids 171 is better.
It is understood that in other embodiments, the silver fine grid 172 may cover a partial area of the top surface of the aluminum fine grid 171; the silver fine grid 172 may cover a partial area of the side surface of the aluminum fine grid 171. For example, the silver fine grid 172 may form a hollowed-out region.
Optionally, the aluminum fine grid 171 is covered with a thickness 1/2 that is less than the thickness of the silver fine grid 172. The aluminum fine grid 171 is covered to a thickness of, for example, 1/3, 1/4, 1/5, 1/6 of the thickness of the silver fine grid 172. Therefore, the thickness ratio of the silver fine grid 172 to the aluminum fine grid 171 is in a proper range, so that poor overall conductivity caused by too small thickness ratio can be avoided, and too high cost caused by too large thickness ratio can also be avoided.
Alternatively, the difference between the width of the silver fine grid 172 and the width of the aluminum fine grid 171 is 5 μm to 20 μm. For example, 5 μm, 6 μm, 10 μm, 15 μm, and 20 μm. Therefore, the difference between the width of the silver fine grid 172 and the width of the aluminum fine grid 171 is within a proper range, the situation that the silver fine grid 172 covered on the side surface of the aluminum fine grid 171 is thin due to too small width difference can be avoided, the situation that the conductive effect is poor is avoided, the situation that the silver fine grid 172 covered on the side surface of the aluminum fine grid 171 is thick due to too large width difference can be avoided, and the situation that the cost is high is avoided.
Optionally, the silver fine grid 172 is 5 μm to 10 μm thick. For example, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm. Therefore, the thickness of the silver fine grid 172 is in a proper range, poor conducting effect caused by too small thickness of the silver fine grid 172 can be avoided, and high cost caused by too large thickness of the silver fine grid 172 can also be avoided.
Alternatively, the aluminum fine grid 171 may have a thickness of 10 μm to 40 μm. For example, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 40 μm. Therefore, the thickness of the aluminum fine grid 171 is in a proper range, so that the ohmic contact formed by the self-doping of the aluminum fine grid 171 is better, and the current is led out efficiently.
In the related art, the front emitter reverse dark saturation current density (J0) of the PERC cell was 20fA/cm 2 Contact zone J0 was 600fA/cm 2 The back non-contact area J0 is 3fA/cm 2 Contact zone J0 was 500fA/cm 2 . The front emitter J0 of the Topcont cell was 10fA/cm 2 Contact zone J0 was 800fA/cm 2 The back non-contact area J0 is 2fA/cm 2 Contact zone J0 was 50fA/cm 2 。
In the P-type solar cell 10 manufactured by the method for manufacturing the P-type solar cell 10 of the present embodiment, the first surface J0 is 2fA/cm 2 Contact zone J0 was 50fA/cm 2 The second surface non-contact area J0 is 2fA/cm 2 Contact zone J0 was 300fA/cm 2 。
If the contact area ratios are all 2%, the J0 of the PERC cell in the related art is 43.54fA/cm 2 . The method of manufacturing P-type solar cell 10 of this example produced P-type solar cell 10 having J0 of 10.92fA/cm 2 . Obviously, the P-type solar cell 10 manufactured by the method for manufacturing the P-type solar cell 10 of the present embodiment has better electrical properties.
For further explanation and explanation of this embodiment, reference may be made to other parts of the present document, and further explanation is omitted here to avoid redundancy.
Example two
The P-type solar cell 10 of the present embodiment is manufactured by the method for manufacturing the P-type solar cell 10 of any one of the embodiments.
In the P-type solar cell 10 of the embodiment of the present application, the doped polysilicon layer 12 is disposed on the first surface, and the aluminum oxide layer 15 is disposed on the second surface, so that the manufactured P-type solar cell 10 can resist radiation on both surfaces, thereby reducing attenuation caused by radiation. Meanwhile, laser grooving and laser doping have certain damage to the cell, and the crystal lattice damage caused by laser can be repaired in the process of forming the electrode. Thus, the P-type solar cell 10 is manufactured at a low cost and has high photoelectric conversion efficiency.
For further explanation and explanation of this embodiment, reference may be made to other parts of the present document, and further explanation is omitted here to avoid redundancy.
EXAMPLE III
The P-type solar cell 10 of the present embodiment includes:
a P-type silicon wafer 101;
the tunneling oxide layer 11, the doped polysilicon layer 12, the first passivation layer 13 and the first electrode 14 are sequentially stacked on the first surface of the P-type silicon wafer 101, and the first electrode 14 penetrates through the first passivation layer 13 and is in contact with the doped polysilicon;
the aluminum oxide layer 15, the second passivation layer 16 and the second electrode 17 are sequentially stacked on the second surface of the P-type silicon wafer 101, the aluminum oxide layer 15 and the second passivation layer 16 are provided with a slotted region, a boron doped layer 189 is formed in the slotted region, and the second electrode 17 penetrates through the slotted region and contacts the boron doped layer 189.
In the P-type solar cell 10 of the embodiment of the present application, the doped polysilicon layer 12 is disposed on the first surface, and the aluminum oxide layer 15 is disposed on the second surface, so that the manufactured P-type solar cell 10 can resist radiation on both surfaces, thereby reducing attenuation caused by radiation. Meanwhile, laser grooving and laser doping have certain damage to the cell, and the crystal lattice damage caused by laser can be repaired in the process of forming the electrode. Thus, the P-type solar cell 10 is manufactured at a low cost and has high photoelectric conversion efficiency.
Optionally, the first electrode 14 and the second electrode 17 are both electroplated copper electrodes.
Alternatively, the first electrode 14 is a silver electrode and the second electrode 17 is an electroplated copper electrode.
Optionally, the first electrode 14 is a silver electrode and the second electrode 17 comprises an aluminum electrode.
Optionally, the second electrode 17 is a composite fine grid, the composite fine grid includes an aluminum fine grid 171 and a silver fine grid 172, the aluminum fine grid 171 is in contact with the P-type silicon wafer 101 through a slotted region, and the silver fine grid 172 is disposed on a side of the aluminum fine grid 171 facing away from the P-type silicon wafer 101.
Optionally, silver fine grid 172 covers the top and side surfaces of aluminum fine grid 171.
Alternatively, the difference between the width of the silver fine grid 172 and the width of the aluminum fine grid 171 is 5 μm to 20 μm.
Optionally, the silver fine grid 172 is 5 μm to 10 μm thick.
Alternatively, the aluminum fine grid 171 may have a thickness of 10 μm to 40 μm.
For further explanation and description of this embodiment, reference may be made to other parts of this document, especially to embodiment one, and further description is omitted here to avoid redundancy.
Example four
The cell module of the present embodiment includes the P-type solar cell 10 of the second embodiment or the third embodiment.
In the cell module of the embodiment of the present application, since the doped polysilicon layer 12 is disposed on the first surface and the aluminum oxide layer 15 is disposed on the second surface, the manufactured P-type solar cell 10 can be radiation-resistant on both surfaces, thereby reducing attenuation caused by radiation. Meanwhile, laser grooving and laser doping have certain damage to the cell, and the crystal lattice damage caused by laser can be repaired in the process of forming the electrode. Thus, the P-type solar cell 10 is manufactured at a low cost and has high photoelectric conversion efficiency.
For further explanation and explanation of this embodiment, reference may be made to other parts of the present document, and further explanation is omitted here to avoid redundancy.
EXAMPLE five
The photovoltaic system of this embodiment includes the cell assembly of the fourth embodiment.
In the photovoltaic system of the embodiment of the present application, since the doped polysilicon layer 12 is disposed on the first surface and the aluminum oxide layer 15 is disposed on the second surface, the manufactured P-type solar cell 10 can resist radiation on both surfaces, thereby reducing attenuation caused by radiation. Meanwhile, laser grooving and laser doping have certain damage to the cell, and the crystal lattice damage caused by laser can be repaired in the process of forming the electrode. Thus, the P-type solar cell 10 is manufactured at a low cost and has high photoelectric conversion efficiency.
In this embodiment, the photovoltaic system can be applied to photovoltaic power stations, such as ground power stations, roof power stations, water surface power stations, etc., and can also be applied to devices or apparatuses that generate electricity by using solar energy, such as user solar power sources, solar street lamps, solar cars, solar buildings, etc. Of course, it is understood that the application scenario of the photovoltaic system is not limited thereto, that is, the photovoltaic system can be applied in all fields requiring solar energy for power generation. Taking a photovoltaic power generation system network as an example, a photovoltaic system may include a photovoltaic array, a combiner box and an inverter, the photovoltaic array may be an array combination of a plurality of battery modules, for example, the plurality of battery modules may constitute a plurality of photovoltaic arrays, the photovoltaic array is connected to the combiner box, the combiner box may combine currents generated by the photovoltaic array, and the combined currents are converted into alternating currents required by a utility grid through the inverter and then are connected to the utility grid to realize solar power supply.
For further explanation and explanation of this embodiment, reference may be made to other parts of the present document, and further explanation is omitted here to avoid redundancy.
The present invention is not intended to be limited to the particular embodiments shown and described, but is to be accorded the widest scope consistent with the principles and novel features herein disclosed. Furthermore, the particular features, structures, materials, or characteristics described in connection with the embodiments or examples disclosed herein may be combined in any suitable manner in any one or more of the embodiments or examples.
Claims (23)
1. A manufacturing method of a P-type solar cell is characterized by comprising the following steps:
providing a P-type silicon wafer;
etching and cleaning the P-type silicon wafer;
preparing a tunneling oxide layer on the first surface of the P-type silicon wafer;
preparing a doped polycrystalline silicon layer on the tunneling oxide layer;
preparing an aluminum oxide layer on the second surface of the P-type silicon wafer;
preparing a first passivation layer on the doped polysilicon layer;
preparing a second passivation layer on the aluminum oxide layer;
locally covering a boron source layer on the second passivation layer;
scanning a boron source layer by using laser to form a boron doped layer and simultaneously forming laser grooving;
cleaning the boron doped layer;
forming a first electrode on the first surface, wherein the first electrode contacts the doped polycrystalline silicon layer through the first passivation layer;
and forming a second electrode on the second surface, wherein the second electrode contacts the boron doped layer through a groove opening region.
2. The method of claim 1, wherein prior to the step of forming the first electrode on the first side, the method comprises:
performing laser film opening on the first passivation layer;
forming a first electrode on the first face, comprising:
forming the first electrode by electroplating copper;
forming a second electrode on the second surface, including
The second electrode is formed by electroplating copper.
3. The method of claim 1, wherein forming a first electrode on the first surface comprises:
forming the first electrode on the first surface by using silver paste;
forming a second electrode on the second face, comprising:
the second electrode is formed by electroplating copper.
4. The method of claim 1, wherein forming a first electrode on the first surface comprises:
forming the first electrode on the first surface by using silver paste;
forming a second electrode on the second face, comprising:
and forming the second electrode on the second surface by using aluminum paste.
5. The method for manufacturing a P-type solar cell according to claim 4, wherein the second electrode comprises a fine grid, a main grid and a bonding pad, the fine grid is an aluminum conductor, and the forming of the second electrode on the second surface by using aluminum paste comprises:
forming the aluminum conductor on the second surface by using aluminum paste;
forming the main grid and the pad on the aluminum conductor, wherein the main grid comprises a first silver conductive part, and/or the pad comprises a second silver conductive part.
6. The method for manufacturing the P-type solar cell according to claim 4, wherein the second electrode comprises an aluminum fine grid and a silver fine grid, and the forming of the second electrode on the second surface by using aluminum paste comprises:
forming the aluminum fine grid on the second surface by using aluminum slurry, wherein the aluminum fine grid is in contact with the P-type silicon wafer through a slotted region;
and forming the silver fine grid on the aluminum fine grid, wherein the aluminum fine grid and the silver fine grid form a composite fine grid.
7. The method of claim 6, wherein forming the silver fine grid on the aluminum fine grid comprises:
covering the top surface and the side surface of the aluminum fine grid with the silver fine grid.
8. The method of claim 6, wherein the aluminum fine grid is covered to a thickness less than 1/2 times the thickness of the silver fine grid.
9. The method according to claim 6, wherein the difference between the width of the silver fine grid and the width of the aluminum fine grid is 5 μm to 20 μm.
10. The method for manufacturing a P-type solar cell according to claim 6, wherein the thickness of the silver fine grid is 5 μm to 10 μm.
11. The method for manufacturing the P-type solar cell according to claim 6, wherein the thickness of the aluminum fine grid is 10 μm to 40 μm.
12. A P-type solar cell, characterized by being produced by the method for producing a P-type solar cell according to any one of claims 1 to 11.
13. A P-type solar cell, comprising:
a P-type silicon wafer;
the tunneling oxide layer, the doped polysilicon layer, the first passivation layer and the first electrode are sequentially stacked on the first surface of the P-type silicon wafer, and the first electrode penetrates through the first passivation layer to be in contact with the doped polysilicon layer;
the aluminum oxide layer, the second passivation layer and the second electrode are sequentially stacked on the second surface of the P-type silicon wafer, a slotted region is formed in the aluminum oxide layer and the second passivation layer, a boron doping layer is formed in the slotted region, and the second electrode penetrates through the slotted region and contacts with the boron doping layer.
14. The P-type solar cell according to claim 13, wherein the first electrode and the second electrode are both electroplated copper electrodes.
15. The P-type solar cell according to claim 13, wherein the first electrode is a silver electrode and the second electrode is an electroplated copper electrode.
16. The P-type solar cell according to claim 13, wherein the first electrode is a silver electrode and the second electrode comprises an aluminum electrode.
17. The P-type solar cell according to claim 16, wherein the second electrode is a composite fine grid, the composite fine grid comprises an aluminum fine grid and a silver fine grid, the aluminum fine grid is in contact with the P-type silicon wafer through a grooved region, and the silver fine grid is arranged on the side of the aluminum fine grid away from the P-type silicon wafer.
18. The P-type solar cell according to claim 17, wherein the silver fine grid covers the top and side surfaces of the aluminum fine grid.
19. The P-type solar cell according to claim 17, wherein the difference between the width of the silver fine grid and the width of the aluminum fine grid is 5 μ ι η to 20 μ ι η.
20. The P-type solar cell according to claim 17, wherein the silver fine grid has a thickness of 5-10 μ ι η.
21. The P-type solar cell according to claim 17, wherein the aluminum fine grid has a thickness of 10 μ ι η to 40 μ ι η.
22. A cell module comprising the P-type solar cell of claim 12 or any one of claims 13 to 21.
23. A photovoltaic system comprising the cell assembly of claim 22.
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