CN216688286U

CN216688286U - Plasma cleaning device of evaporation table

Info

Publication number: CN216688286U
Application number: CN202123134966.9U
Authority: CN
Inventors: 张雪奎; 牛立久; 刘增增; 周一雷; 徐金鑫
Original assignee: Shandong Huakai Microelectronics Equipment Co ltd
Current assignee: Shandong Huakai Microelectronics Equipment Co ltd
Priority date: 2021-12-14
Filing date: 2021-12-14
Publication date: 2022-06-07
Anticipated expiration: 2031-12-14

Abstract

The utility model discloses a plasma cleaning device of an evaporation table, wherein the plasma cleaning device is arranged inside a vacuum cavity of the evaporation table and is positioned at the bottom of a lower partition plate, the bottom of the lower partition plate of the vacuum cavity is provided with a sliding table in a sliding manner, a metal crucible of the evaporation table and the plasma cleaning device are arranged on the sliding table, the sliding table is driven by a station switching device to enable the metal crucible or the plasma cleaning device to be positioned at a working station, and when the metal crucible is positioned at the working station, the position of the working port on the lower partition plate corresponds to the position of a metal evaporation coating film; when the plasma cleaning device is positioned at a working station, the plasma cleaning device corresponds to the position of the working opening in the lower partition plate, and plasma generated by the plasma cleaning device overflows from the working opening and is used for cleaning a wafer on the upper part of the vacuum cavity.

Description

Plasma cleaning device of evaporation table

Technical Field

The utility model relates to a cleaning device, in particular to a plasma cleaning device of an evaporation table.

Background

The evaporation table is evaporation coating equipment, and the working principle of the evaporation coating equipment is that a high-pressure electron gun emits electrons, a high-energy electron beam is formed to metal aluminum particles on a crucible under the action of a strong magnetic field, the aluminum particles absorb heat, the solid state is changed into the liquid state, one part of the aluminum particles is changed into the gas state, and the aluminum particles are evaporated and deposited on the surface of a wafer. In the process, the film is coated by continuously heating to 230 ℃, the adhesive force of the film layer meets the technical requirements of the process, the time is long (usually, a batch of wafers are coated for 3-4 hours), the efficiency is low, the surface of the film is whitish, and the film quality is poor, so that the plasma cleaning device is designed to effectively improve the phenomenon.

SUMMERY OF THE UTILITY MODEL

The technical problem to be solved by the utility model is as follows: the plasma cleaning device for the evaporation table can effectively clean the surface of a wafer, reduce heating time, improve the surface of a coated film, improve production quality and improve efficiency.

In order to solve the technical problem, the technical scheme of the utility model is as follows: a plasma cleaning device of an evaporation table is arranged in a vacuum cavity of the evaporation table and located at the bottom of a lower partition plate, a sliding table is slidably arranged at the bottom of the lower partition plate of the vacuum cavity, a metal crucible and the plasma cleaning device of the evaporation table are arranged on the sliding table, the sliding table is driven by a station switching device to enable the metal crucible or the plasma cleaning device to be located at a working station, and when the metal crucible is located at the working station, the position of a working opening in the lower partition plate corresponds to that of a metal evaporation coating film; when the plasma cleaning device is positioned at a working station, the position of the plasma cleaning device corresponds to that of a working opening on the lower partition plate, and plasma generated by the plasma cleaning device overflows from the working opening and is used for cleaning a wafer on the upper part of the vacuum cavity.

As a preferred scheme, plasma belt cleaning device is including being fixed in the barrel on the slip table, the barrel upper end is provided with the export, barrel internally mounted has the positive pole end, the cathode filament that is used for emitting electron is installed to the upper end of barrel, the bottom of barrel is provided with the intake pipe that lets in the argon gas, still be provided with in the barrel and be used for carrying out the accelerating magnetic field that accelerates to plasma.

As a preferred scheme, the anode end is an anode cylinder, the anode cylinder is fixed at the bottom of the cylinder body, the air inlet pipe is installed at the bottom of the cylinder body and is communicated with an inner hole of the anode cylinder, and the center line of the anode cylinder is parallel to the center line of the working opening and the direction of the magnetic field.

As a preferred scheme, the bottom of barrel is provided with first bottom plate and second bottom plate from top to bottom, the positive pole section of thick bamboo is fixed on first bottom plate, be provided with a plurality of air vent that the annular was arranged on the first bottom plate, install between first bottom plate and the second bottom plate the intake pipe, the intake pipe with the air vent intercommunication, the air vent communicates with the hole of positive pole section of thick bamboo.

As a preferable scheme, two pairs of binding posts are detachably fixed on the upper part of the barrel, and the cathode filament is detachably fixed between each pair of binding posts.

As a preferred scheme, the station switching device comprises a servo motor, the servo motor is fixed at the bottom of the lower partition plate of the vacuum cavity, and the servo motor is in transmission connection with the sliding table through a lead screw nut mechanism.

After the technical scheme is adopted, the utility model has the effects that: the plasma cleaning device is arranged inside the vacuum cavity of the evaporation table and positioned at the bottom of the lower partition plate, the sliding table is slidably arranged at the bottom of the lower partition plate of the vacuum cavity, the metal crucible and the plasma cleaning device of the evaporation table are arranged on the sliding table, the sliding table is driven by the station switching device to enable the metal crucible or the plasma cleaning device to be positioned at a working station, and when the metal crucible is positioned at the working station, the position of the working opening on the lower partition plate corresponds to that of a metal evaporation coating film; when the plasma cleaning device is positioned at a working station, the plasma cleaning device corresponds to the position of a working opening on a lower partition plate, plasma generated by the plasma cleaning device overflows from the working opening and is used for cleaning a wafer on the upper part of a vacuum cavity, a metal crucible can be freely switched or the plasma cleaning device is positioned at the working station through a sliding table, at the moment, the vacuum cavity is vacuumized, the temperature of the cavity is raised, the cavity is moved to the working station through the plasma cleaning device after reaching a certain temperature, the surface of the wafer is continuously bombarded by plasma to remove pollutants such as surface oxides, organic residues and micro-particles, surface activation energy is carried out at the same time, the metal crucible is moved to the working station to start film coating, after the film coating is finished, the cavity is naturally cooled to normal temperature, a batch of wafers are coated, after an ion source is added, the heating temperature of the film coating is reduced to 130 ℃ from 230 ℃, and the total consumption is reduced by half, the device can be finished within 1.5-2 hours, the film quality is good, the adhesive force of the film layer is strong, the device can effectively clean the surface of the wafer, the heating time is shortened, the film coating surface is improved, the production quality is improved, and the efficiency is improved.

Because the plasma cleaning device comprises a cylinder body fixed on the sliding table, an outlet is arranged at the upper end of the cylinder body, an anode end is arranged in the cylinder body, a cathode filament used for emitting electrons is arranged at the upper end of the cylinder body, an air inlet pipe for introducing argon is arranged at the bottom of the cylinder body, an accelerating magnetic field used for accelerating the plasma is also arranged in the cylinder body, the anode end is an anode cylinder fixed at the bottom of the cylinder body, the air inlet pipe is arranged at the bottom of the cylinder body and communicated with an inner hole of the anode cylinder, the central line of the anode cylinder is parallel to the central line of the working opening and the magnetic field direction, the argon continuously discharges electrons due to cathode thermal emission, is ionized under the action of the magnetic field, finally forms the plasma, the anode is made into a cylindrical shape, the central line is parallel to the magnetic field direction, and can well restrain the electron flow emitted by the cathode, argon in the air inlet pipe enters an inner hole of the anode cylinder, and atoms (or molecules) of the gas are ionized in the anode cylinder to form an arc column with high plasma density.

And the bottom of the cylinder body is provided with a first bottom plate and a second bottom plate from top to bottom, the anode cylinder is fixed on the first bottom plate, the first bottom plate is provided with a plurality of vent holes which are annularly arranged, the air inlet pipe is arranged between the first bottom plate and the second bottom plate, the air inlet pipe is communicated with the vent holes, and the vent holes are communicated with the inner hole of the anode cylinder, so that the argon can conveniently enter the anode cylinder.

And the station switching device comprises a servo motor which is fixed at the bottom of the lower partition plate of the vacuum cavity and is in transmission connection with the sliding table through a lead screw nut mechanism, so that the station switching is facilitated.

Drawings

The utility model is further illustrated with reference to the following figures and examples.

FIG. 1 is a schematic structural view of a metal crucible and a plasma cleaning device on a slide table;

FIG. 2 is a cross-sectional view of an embodiment of the present invention;

in the figure: 1. an evaporation table; 101. a vacuum chamber; 2. a lower partition plate; 3. a servo motor; 4. a lead screw nut mechanism; 5. a sliding table; 6. a working port; 7. a working station; 8. a metal crucible; 9. a plasma cleaning device; 10. a barrel; 11. an air inlet pipe; 12. a vent hole; 13. an inner bore; 14. an anode terminal; 1041. an anode cylinder; 15. a first base plate; 16. a second base plate; 17. an accelerating magnetic field; 18. A binding post; 19. and a cathode filament.

Detailed Description

The present invention is described in further detail below with reference to specific examples.

As shown in fig. 1 and 2, a plasma cleaning device 9 of an evaporation table 1, wherein the plasma cleaning device 9 is installed inside a vacuum cavity 101 of the evaporation table 1 and is located at the bottom of a lower partition plate 2, a sliding table 5 is slidably installed at the bottom of the lower partition plate 2 of the vacuum cavity 101, a metal crucible 8 and the plasma cleaning device 9 of the evaporation table 1 are installed on the sliding table 5, the sliding table 5 is driven by a station switching device to enable the metal crucible 8 or the plasma cleaning device 9 to be located at a working station 7, and when the metal crucible 8 is located at the working station 7, the position of the sliding table corresponds to the position of a working opening 6 on the lower partition plate 2 for metal evaporation coating; when the plasma cleaning device 9 is positioned at the working station 7 and corresponds to the position of the working opening 6 on the lower partition plate 2, the plasma cleaning device 9 generates plasma which overflows from the working opening 6 and is used for cleaning the wafer on the upper part of the vacuum chamber 101.

In this embodiment, the station switching device includes a servo motor 3, the servo motor 3 is fixed at the bottom of the lower partition plate 2 of the vacuum chamber 101, and the servo motor 3 is in transmission connection with the sliding table 5 through a lead screw nut mechanism 4.

Plasma cleaning device 9 is including being fixed in barrel 10 on slip table 5, barrel 10 upper end is provided with the export, barrel 10 internally mounted has anode end 14, the cathode filament 19 that is used for emitting electron is installed to the upper end of barrel 10, the bottom of barrel 10 is provided with the intake pipe 11 that lets in argon gas, still be provided with in the barrel 10 and be used for carrying out accelerating magnetic field 17 that accelerates to plasma, anode end 14 is an anode tube 1041, anode tube 1041 is fixed in the bottom of barrel 10, intake pipe 11 is installed in the bottom of barrel 10 and is linked together with anode tube 1041's hole 13, anode tube 1041's central line is parallel with the central line and the magnetic field direction of working hole 6, and argon gas is because the cathode thermal emission electron lasts to discharge, under the effect in magnetic field, is ionized, finally forms plasma, and the positive pole is made the cylindric, the central line is parallel to the magnetic field direction, the magnetic field can well restrain the electron flow emitted by the cathode, the argon in the air inlet pipe 11 enters the inner hole 13 of the anode cylinder 1041, and the atoms (or molecules) of the gas are ionized in the anode cylinder 1041 to form an arc column with high plasma density; therefore, the metal crucible 8 or the plasma cleaning device 9 can be freely switched to be positioned at the working station 7 through the sliding table 5, then the vacuum chamber 101 is vacuumized, the temperature of the chamber body is raised to 130 ℃, the chamber body is moved to the working station 7 through the plasma cleaning device 9 after reaching a certain temperature, the formed plasma continuously bombards the surface of the wafer to remove pollutants such as surface oxides, organic residues and micro-particles, surface activation energy is simultaneously carried out, finally the metal crucible 8 is moved to the working station 7 to start coating, the temperature of the chamber body is naturally reduced to normal temperature after coating is finished, a batch of wafers are coated, the heating temperature of the coating is reduced to 130 ℃ from 230 ℃ through plasma cleaning, the total consumption is reduced by half, the coating can be finished in 1.5-2 hours, the coating quality is good, the adhesive force of the coating is strong, and the device can effectively clean the surface of the wafer, the heating time is reduced, the coating surface is improved, the production quality is improved, and the efficiency is improved.

As shown in fig. 2, the bottom of the barrel 10 is provided with a first bottom plate 15 and a second bottom plate 16 from top to bottom, the anode cylinder 1041 is fixed on the first bottom plate 15, a plurality of vent holes 12 arranged in an annular manner are arranged on the first bottom plate 15, the air inlet pipe 11 is installed between the first bottom plate 15 and the second bottom plate 16, the air inlet pipe 11 is communicated with the vent holes 12, and the vent holes 12 are communicated with the inner hole 13 of the anode cylinder 1041, so that the argon can enter conveniently.

In this embodiment, two pairs of terminals 18 are detachably fixed on the upper portion of the barrel 10, the cathode filament 19 is detachably fixed between each pair of terminals 18, and the cathode filament 19 is arranged to be detachably fixed because the cathode filament 19 continuously emits electrons and is easily worn.

The working principle of the utility model is as follows: firstly, the vacuum chamber 101 is vacuumized, the temperature of the chamber is raised to 130 ℃, after the temperature is reached, the screw nut mechanism 4 is driven by the plasma cleaning device 9 through the servo motor 3 to drive the sliding table 5 to move to the working station 7, then argon enters the inner hole 13 of the anode cylinder 1041 through the air inlet pipe 11, the argon is ionized under the action of a magnetic field due to continuous electron discharge of cathode thermal emission, finally plasma is formed, the plasma continuously bombards the surface of the wafer, the surface of the wafer is waited to be cleaned, the screw nut mechanism 4 is driven by the servo motor 3 to drive the sliding table 5 to move the metal crucible 8 to the working station 7, film coating is started, the film coating is waited to be completed, the temperature of the chamber is naturally reduced to normal temperature, and the film coating of a batch of wafers is completed.

The above-mentioned embodiments are merely descriptions of the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, and various modifications and alterations made to the technical solution of the present invention without departing from the spirit of the present invention are intended to fall within the scope of the present invention defined by the claims.

Claims

1. The utility model provides a plasma cleaning device of evaporation station which characterized in that: the plasma cleaning device is arranged in a vacuum cavity of the evaporation table and is positioned at the bottom of the lower partition plate, the bottom of the lower partition plate of the vacuum cavity is provided with a sliding table in a sliding mode, a metal crucible of the evaporation table and the plasma cleaning device are arranged on the sliding table, the sliding table is driven by the station switching device to enable the metal crucible or the plasma cleaning device to be located at a working station, and when the metal crucible is located at the working station, the position of a working opening in the lower partition plate corresponds to that of a metal evaporation coating film; when the plasma cleaning device is positioned at a working station, the position of the plasma cleaning device corresponds to that of a working opening on the lower partition plate, and plasma generated by the plasma cleaning device overflows from the working opening and is used for cleaning a wafer on the upper part of the vacuum cavity.

2. A plasma cleaning apparatus of an evaporation table as claimed in claim 1, wherein: plasma belt cleaning device is including being fixed in the barrel on the slip table, the barrel upper end is provided with the export, barrel internally mounted has the positive pole end, the cathode filament that is used for emitting electron is installed to the upper end of barrel, the bottom of barrel is provided with the intake pipe that lets in argon gas, still be provided with in the barrel and be used for carrying out the accelerating magnetic field that accelerates to plasma.

3. A plasma cleaning apparatus of an evaporation stage according to claim 2, wherein: the positive pole end is an anode cylinder, the bottom at the barrel is fixed to the anode cylinder, the intake pipe is installed in the bottom of barrel and is communicated with the hole of anode cylinder, the central line of anode cylinder is parallel with the central line and the magnetic field direction of working hole.

4. A plasma cleaning apparatus of an evaporation stage according to claim 3, wherein: the bottom of barrel is provided with first bottom plate and second bottom plate from top to bottom, the positive pole section of thick bamboo is fixed on first bottom plate, be provided with a plurality of air vent that the annular was arranged on the first bottom plate, install between first bottom plate and the second bottom plate the intake pipe, the intake pipe with the air vent intercommunication, the air vent communicates with the hole of positive pole section of thick bamboo.

5. The plasma cleaning apparatus of an evaporation table as claimed in claim 4, wherein: two pairs of binding posts are detachably fixed on the upper part of the barrel, and the cathode filament is detachably fixed between each pair of binding posts.

6. The plasma cleaning apparatus of an evaporation table as claimed in claim 5, wherein: the station switching device comprises a servo motor, the servo motor is fixed at the bottom of the lower partition plate of the vacuum cavity, and the servo motor is in transmission connection with the sliding table through a lead screw nut mechanism.