CN216671637U - 高可靠性mosfet晶体管 - Google Patents
高可靠性mosfet晶体管 Download PDFInfo
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- CN216671637U CN216671637U CN202123227287.6U CN202123227287U CN216671637U CN 216671637 U CN216671637 U CN 216671637U CN 202123227287 U CN202123227287 U CN 202123227287U CN 216671637 U CN216671637 U CN 216671637U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
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CN202123227287.6U CN216671637U (zh) | 2021-12-21 | 2021-12-21 | 高可靠性mosfet晶体管 |
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CN202123227287.6U CN216671637U (zh) | 2021-12-21 | 2021-12-21 | 高可靠性mosfet晶体管 |
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CN216671637U true CN216671637U (zh) | 2022-06-03 |
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CN202123227287.6U Active CN216671637U (zh) | 2021-12-21 | 2021-12-21 | 高可靠性mosfet晶体管 |
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2021
- 2021-12-21 CN CN202123227287.6U patent/CN216671637U/zh active Active
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Effective date of registration: 20240207 Address after: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee after: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region after: China Address before: 215000 room 506, building nw01, Suzhou nano City, No. 99, Jinjihu Avenue, Suzhou Industrial Park, Jiangsu Province Patentee before: SUZHOU SILIKRON SEMICONDUCTOR TECHNOLOGY CO.,LTD. Country or region before: China |
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Effective date of registration: 20240322 Address after: Room 306, Building 2, No.1 Qingshan Road, High tech Zone, Suzhou City, Jiangsu Province, 215100 Patentee after: New Silicon Microelectronics (Suzhou) Co.,Ltd. Country or region after: China Address before: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee before: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region before: China |
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