CN216413002U

CN216413002U - Gas dispersion device for improving dry etching uniformity, reaction chamber and etching machine

Info

Publication number: CN216413002U
Application number: CN202122086729.3U
Authority: CN
Inventors: 李瑞评; 乔新宇; 李彬彬; 霍曜
Original assignee: Fujian Jingan Optoelectronics Co Ltd
Current assignee: Fujian Jingan Optoelectronics Co Ltd
Priority date: 2021-08-31
Filing date: 2021-08-31
Publication date: 2022-04-29
Anticipated expiration: 2031-08-31

Abstract

The utility model provides a gas dispersing device, a reaction chamber and an etching machine for improving dry etching uniformity, wherein the gas dispersing device comprises: the dispersion plate comprises a dispersion plate body, wherein a plurality of air holes are formed in the dispersion plate body; the cover plates are respectively covered and sealed at the positions of the air inlets or the air outlets of the air holes; and the rotary driving part is fixed on the dispersion plate body, an output shaft of the rotary driving part is fixedly connected with the cover plate, and the rotary driving part is used for driving the cover plate to rotate so as to open or close the air hole. The gas dispersion device can ensure the uniformity of etching gas in the cavity on the premise of not opening the reaction cavity, thereby ensuring the processing quality of the wafer and improving the processing efficiency.

Description

Gas dispersion device for improving dry etching uniformity, reaction chamber and etching machine

Technical Field

The utility model relates to the technical field of semiconductor manufacturing equipment, in particular to a gas dispersing device, a reaction chamber and an etching machine for improving dry etching uniformity.

Background

In recent years, as a new high-density plasma dry etching technology, the ICP dry etching technology has been well developed in the aspect of etching materials such as silicon, silicon dioxide, III-V compounds, and the like, and has been widely applied to the manufacturing processes of various optoelectronic devices. At present, the semiconductor laser resonant cavity end face based on InP materials, the end face between a laser and a detector integrated device, a beam splitting mirror face, a diffraction grating and the like are manufactured by adopting the technology. In the above applications, the etched end face is required to have good flatness and verticality, and high etching rate and selectivity.

The existing dry etching ICP machine has the defect of poor etching uniformity, and the etching gas distribution at the injection port and the center of the loading disc and at the gate of the reaction chamber is uneven, so that the etching rate of a wafer is very poor in the dry etching process; this phenomenon affects the quality of the wafer. To improve this problem, it is common to open or block some of the gas holes on the gas distribution plate to increase the uniformity of the etching gas in the chamber, thereby increasing the uniformity of the etching rate; in the prior art, in order to open and shield part of the air holes on the gas dispersion plate, a cover plate of a reaction chamber is generally opened at first, then the gas dispersion plate is taken out from the chamber, and then a plugging piece is added on the air holes to be plugged; the process changes the environment in the reaction chamber, so that further re-machine maintenance is needed to ensure that the environment in the reaction chamber reaches the environmental parameters before uncovering, thereby not only improving the risk probability of damage to the reaction chamber and the machine, but also being difficult to ensure higher processing efficiency.

SUMMERY OF THE UTILITY MODEL

In view of the above, the present invention provides a gas distribution apparatus, a reaction chamber and an etching machine for improving dry etching uniformity, so as to solve one or more technical problems in the prior art.

According to an aspect of the present invention, there is disclosed a gas dispersion apparatus for improving uniformity of dry etching, the apparatus including:

the dispersion plate comprises a dispersion plate body, wherein a plurality of air holes are formed in the dispersion plate body;

the cover plates are respectively covered and sealed at the positions of the air inlets or the air outlets of the air holes;

and the rotary driving part is fixed on the dispersion plate body, an output shaft of the rotary driving part is fixedly connected with the cover plate, and the rotary driving part is used for driving the cover plate to rotate so as to open or close the air hole.

In some embodiments of the present invention, the plurality of air holes are circumferentially arranged on the dispersion plate body in a plurality of circles, and a predetermined distance is spaced between two adjacent circles of air holes.

In some embodiments of the present invention, the number of the air holes is 5, and each of the turns has a plurality of air holes.

In some embodiments of the utility model, the plurality of air holes of each ring are uniformly and spaced.

In some embodiments of the utility model, the pore size of the pores increases from the inner ring to the outer ring.

In some embodiments of the present invention, the cover plate is circular, the radial dimension of the cover plate is greater than the radial dimension of the air hole, the outer side of the air hole is provided with a rotating shaft, and the cover plate is fixedly connected with the end of the rotating shaft.

In some embodiments of the present invention, the output shaft of the rotary drive member is connected to the rotating shaft, and the rotating shaft rotates in synchronization with the output shaft of the rotary drive member.

In some embodiments of the utility model, the rotary drive component comprises a torque sensor.

According to another aspect of the present invention, a wafer reaction chamber is also disclosed, in which a wafer carrier and a gas distribution device for improving uniformity of dry etching as described in any of the above embodiments are disposed.

According to yet another aspect of the present invention, there is also disclosed a dry etching ICP machine comprising a wafer reaction chamber as described above.

By utilizing the gas dispersion device and the wafer reaction chamber for improving the dry etching uniformity in the embodiment of the utility model, at least the following beneficial effects can be obtained:

this improve a plurality of gas pockets on gas dispersion devices's of dry process etching homogeneity dispersion plate body respectively through a plurality of apron realization shutoff, and the apron realizes the automation of gas pocket and opens and shuts at the drive effect of rotary driving part, can freely adjust the concentration distribution of etching gas in the cavity, thereby change the etching rate change of each part, just can carry out the change that the gas pocket distributes under the condition that need not open the chamber maintenance, greatly reduce the impaired probability of board and avoided the time of compound machine maintenance after opening the chamber, and the machining efficiency is improved.

Additional advantages, objects, and features of the utility model will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the utility model. The objectives and other advantages of the utility model will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

It will be appreciated by those skilled in the art that the objects and advantages that can be achieved with the present invention are not limited to the specific details set forth above, and that these and other objects that can be achieved with the present invention will be more clearly understood from the detailed description that follows.

Drawings

The accompanying drawings, which are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the utility model and together with the description serve to explain the principles of the utility model. The components in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the utility model. For purposes of illustrating and describing some portions of the present invention, corresponding parts of the drawings may be exaggerated, i.e., may be larger, relative to other components in an exemplary apparatus actually manufactured according to the present invention. In the drawings:

fig. 1 is a schematic structural diagram of a wafer reaction chamber according to an embodiment of the utility model.

Fig. 2 is a schematic structural diagram of a gas distribution apparatus for improving uniformity of dry etching according to an embodiment of the present invention.

Fig. 3 is a schematic structural diagram of the cover plate covering and sealing the air holes according to an embodiment of the utility model.

Fig. 4 is a schematic structural diagram of the cover plate according to an embodiment of the utility model when the cover plate is opened.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the embodiments of the present invention are further described in detail below with reference to the accompanying drawings. The exemplary embodiments and descriptions of the present invention are provided to explain the present invention, but not to limit the present invention.

It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not closely related to the present invention are omitted.

It should be emphasized that the term "comprises/comprising/comprises/having" when used herein, is taken to specify the presence of stated features, elements, steps or components, but does not preclude the presence or addition of one or more other features, elements, steps or components.

It should be noted that the terms of orientation and orientation used in the present specification are relative to the position and orientation shown in the drawings; the term "coupled" herein may mean not only directly coupled, but also indirectly coupled, in which case intermediates may be present, if not specifically stated. A direct connection is one in which two elements are connected without the aid of intermediate elements, and an indirect connection is one in which two elements are connected with the aid of other elements.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, like reference characters designate the same or similar parts throughout the several views.

Fig. 2 is a schematic structural diagram of a gas distribution apparatus 001 for improving uniformity of dry etching according to an embodiment of the present invention, and as shown in fig. 2, the gas distribution apparatus 001 includes a distribution plate body 100, a cover plate 120, and a rotation driving member 130. The outer shape of the dispersion plate body 100 may be similar to the shape of the reaction chamber, and for example, when the reaction chamber has a cylindrical structure, the dispersion plate body 100 may have a circular plate structure. The dispersion plate body 100 is provided with a plurality of gas holes 110, and the gas holes 110 are used for realizing uniform distribution of etching gas in the reaction chamber. Wherein, the aperture size and the arrangement of the plurality of air holes 110 on the dispersion plate body 100 can be set according to the requirement of the practical application environment,

when the dispersion plate body 100 has a plurality of air holes 110, the gas dispersion device 001 has a plurality of cover plates 120, and the plurality of cover plates 120 cover and seal the air inlets or the air outlets of the plurality of air holes 110, respectively. The cover plate 120 seals the gas holes 110 of the dispersion plate body 100, so that the flow rate of gas at each position in the reaction chamber can be adjusted. For example, when it is desired to reduce the gas flow flux at the injection port of the reaction chamber, the gas hole 110 near the injection port can be covered by the cover plate 120; if the gas flow rate at the injection port of the reaction chamber is to be increased, the cover plate 120 covering the gas hole 110 near the injection port can be opened. The rotation driving member 130 is fixed to the dispersion plate body 100, and controls opening and closing of the cover plate 120. The output shaft of the rotation driving part 130 is fixedly connected to the cover plate 120, so that the output shaft of the rotation driving part 130 can drive the cover plate 120 to rotate to open or close the air hole 110. The rotation driving member 130 may be specifically located inside the dispersion plate body 100, or may be fixed on the surface of the dispersion plate body 100; for example, the rotation driving member 130 is fixed to the top end surface of the dispersion plate body 100 by a driving member bracket, a screw, or the like, and the cover plate 120 covers the air outlet of the air hole 110 located at the top end surface, and at this time, the output shaft of the rotation driving member 130 fixed to the dispersion plate body 100 is directly and fixedly connected to the cover plate 120, so that the cover plate 120 can be fixed.

Fig. 3 is a schematic structural view illustrating a cover plate 120 covering and sealing an air hole 110 according to an embodiment of the present invention, fig. 4 is a schematic structural view illustrating an opening of the cover plate 120 according to an embodiment of the present invention, and referring to fig. 3 and 4, the cover plate 120 of the gas dispersing device 001 is driven by the rotation driving member 130 to automatically open and close the air hole 110 on the dispersion plate body 100, so that when the gas flow at different positions in the reaction chamber needs to be adjusted, a complicated step of opening the reaction chamber is omitted, that is, the cover plate 120 can be automatically opened and closed by setting the operation frequency and the interval time of the rotation driving member 130. Therefore, the gas dispersing device 001 not only solves the problem that the etching rate in the reaction chamber is very poor, but also further simplifies the process steps in the processing process, and reduces the maintenance time and the maintenance time spent by the reaction chamber as much as possible, thereby improving the wafer productivity.

In an embodiment, the plurality of air holes 110 on the dispersion plate body 100 may be arranged in a plurality of circles circumferentially, and a predetermined distance is spaced between two adjacent circles of air holes 110. Referring to fig. 2, the air holes 110 of each circle are all arranged around the periphery of the axis of the dispersion plate body 100, that is, the air holes 110 are circumferentially arranged in multiple circles, and the axis of each circle around the axis is the axis of the dispersion plate body 100. The density of the air holes 110 in each circle is not particularly limited, and the number of the air holes 110 in each circle may be the same or different. The inner-most circle of the exemplary plurality of circles may have a smaller number of the air holes 110 than the outer-most circle, wherein the outer-most circle is a circle closest to the outer circumference of the dispersion plate body 100, and the inner-most circle is a circle closest to the axis of the dispersion plate body 100. In the above description, the dispersion plate body 100 is exemplified by a circular plate, and when the specific shape of the reaction chamber is a square, the dispersion plate body 100 may also be a square plate, but the center line of the square plate may be taken as the surrounding axis of each circle.

For example, the number of the air holes 110 on the dispersion plate body 100 may be specifically 5, and any two adjacent circles of the 5 circles of the circumferentially arranged air holes 110 are spaced by a certain distance. The distance between any two circles can be equal or unequal, and the distance between two circles can be regarded as the radial distance between the axes of the air holes 110 of two adjacent circles. In this example, each turn has a plurality of air holes 110, and the plurality of air holes 110 belonging to the same turn have the same pore size, while the air holes 110 belonging to different turns have different pore sizes. Further, the five circles of air holes 110 in the dispersion plate body 100 are equal in number of the air holes 110 in each circle, and specifically, the number of the air holes 110 in each circle is 14. Since the overall diameter of each turn is gradually increased from the inside to the outside, when the number of the air holes of each of the five turns is equal, the aperture size of the corresponding air hole 110 may be gradually increased from the inner turn to the outer turn. It should be understood that the size of the space between any two turns may or may not be equal at this time.

In another embodiment of the present invention, the shape of the cover plate 120 covering the air holes 110 at the positions of the air holes 110 may be circular, that is, the cover plate 120 is a circular cover plate 120, and in order to effectively seal the corresponding air holes 110 by the circular cover plate 120, the diameter of the circular cover plate 120 may be further larger than the aperture size of the air holes 110 covered by the circular cover plate. Referring to fig. 3, in this structure, the cover plate 120 may be directly and fixedly connected to the rotating shaft 131, and the rotating shaft 131 may be an output shaft of the rotation driving member 130, or an auxiliary connecting shaft fixedly connected to the output shaft of the rotation driving member 130. The rotating shaft 131 is specifically disposed at the outer side of the air hole 110, and the cover plate 120 is directly and fixedly connected to the end of the rotating shaft 131, wherein the cover plate 120 and the rotating shaft 131 may be integrally formed, and may also be connected in a detachable or non-detachable manner. Specifically, when the cover plate 120 is located above the top end surface of the dispersion plate body 100, the rotating shaft 131 may be specifically disposed directly below the cover plate 120 or directly above the cover plate 120. When the rotating shaft 131 is located right below the cover plate 120, a through hole for the rotating shaft 131 can be formed in a corresponding position on the dispersion plate body, and the rotating shaft 131 is embedded in the through hole for the rotating shaft 131; the rotation driving member 130 for driving the rotation shaft 131 to rotate at this time may be further fixed on the bottom end surface of the dispersion plate body 100, and the input shaft of the rotation driving member 130 extends into the dispersion plate body 100 and is fixedly connected with the rotation shaft 131, so that the rotation shaft 131 and the output shaft of the rotation driving member 130 rotate synchronously. When the rotating shaft 131 is located right above the cover plate 120, the rotation driving member 130 may be fixed on the top end surface of the dispersion plate body 100, and at this time, the output shaft of the rotation driving member 130 is directly and fixedly connected to the rotating shaft 131.

It will be understood that when the rotating shaft 131 is an output shaft of the rotation driving member 130, the output shaft of the rotation driving member 130 is similar to the rotating shaft 131 in the above-described embodiment, and the cover plate 120 may be fixed to an end portion of the output shaft. The output shaft of the rotation driving member 130 may be located directly below or above the cover plate 120, and when located directly below the cover plate 120, the rotation driving member 130 may be fixed on the bottom end surface of the dispersion plate body 100, and an output shaft through hole is further formed on the gas dispersion plate, an axis of the output shaft through hole is parallel to an axis of the gas hole 110, and the output shaft of the rotation driving member 130 located directly below the gas dispersion plate passes through the output shaft through hole, and an end portion of the output shaft is fixedly connected to the cover plate 120. For example, the end of the output shaft and the cover plate 120 may be connected by interference fit, welding, or bonding.

Specifically, the rotation driving part 130 of the gas dispersion device 001 may further include a torque sensor, i.e., the torque sensor may be disposed inside or outside the dispersion plate body 100. In addition, the rotation driving part 130 may be a motor.

As shown in fig. 1, the present invention further discloses a wafer reaction chamber, which includes a chamber housing 002, a wafer carrier plate 003 and the gas dispersing device 001 according to any of the above embodiments are disposed in the chamber housing 002, the gas dispersing device 001 is disposed right above the wafer carrier plate 003, and the gas dispersing device 001 can selectively open or close a portion of the gas holes 110 according to the change of the gas environment in the chamber to avoid the occurrence of the poor etching rate in the chamber.

Further, the utility model also discloses a dry etching ICP machine, which comprises the wafer reaction chamber disclosed in the above embodiment. In the reaction chamber of the dry etching ICP machine, the uniformity of gas in the chamber can be ensured by opening or closing part of the cover plate 120, so that the etching rate of a wafer at an injection port is reduced, the chamber opening maintenance process is saved, and the utilization rate of the dry etching ICP machine and the etching capacity of the wafer are improved.

Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments and/or in combination with or instead of the features of the other embodiments in the present invention.

The above-mentioned embodiments illustrate and describe the basic principles and main features of the present invention, but the present invention is not limited to the above-mentioned embodiments, and those skilled in the art should make modifications, equivalent changes and modifications without creative efforts to the present invention within the protection scope of the technical solution of the present invention.

Claims

1. A gas dispersion apparatus for improving uniformity of dry etching, the apparatus comprising:

2. The apparatus of claim 1, wherein the plurality of air holes are circumferentially arranged on the dispersion plate body in a plurality of circles, and a predetermined distance is provided between two adjacent circles of air holes.

3. The gas dispersion apparatus for improving uniformity of dry etching according to claim 2, wherein the number of the gas holes is 5, and each of the gas holes has a plurality of gas holes.

4. The gas distribution apparatus for improving uniformity of dry etching according to claim 3, wherein the plurality of gas holes of each turn are uniformly and alternately arranged.

5. The gas dispersion device for improving uniformity of dry etching according to claim 4, wherein the pore size of the gas hole from the inner ring to the outer ring is gradually increased.

6. The gas distribution device for improving dry etching uniformity as claimed in claim 1, wherein the cover plate is circular, the radial dimension of the cover plate is larger than that of the gas hole, the outer side of the gas hole is provided with a rotating shaft, and the cover plate is fixedly connected with the end of the rotating shaft.

7. The gas distribution apparatus for improving uniformity of dry etching according to claim 6, wherein an output shaft of said rotation driving part is connected to said rotation shaft, and said rotation shaft rotates in synchronization with the output shaft of said rotation driving part.

8. The gas dispersion apparatus for improving dry etching uniformity according to any one of claims 1 to 7, wherein the rotation driving part comprises a torque sensor.

9. A wafer reaction chamber, characterized in that a wafer carrier and a gas distribution device for improving the uniformity of dry etching according to any one of claims 1 to 8 are arranged in the reaction chamber.

10. A dry etching ICP machine, characterized in that it comprises a wafer reaction chamber as claimed in claim 9.