CN217881415U - Gaseous air inlet unit of etching machine - Google Patents

Gaseous air inlet unit of etching machine Download PDF

Info

Publication number
CN217881415U
CN217881415U CN202221398276.6U CN202221398276U CN217881415U CN 217881415 U CN217881415 U CN 217881415U CN 202221398276 U CN202221398276 U CN 202221398276U CN 217881415 U CN217881415 U CN 217881415U
Authority
CN
China
Prior art keywords
arm
air
air feed
spiral arm
air supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202221398276.6U
Other languages
Chinese (zh)
Inventor
钱强
袁鸣
张冀东
梁晓航
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuxi Xinhan Electronic Technology Co ltd
Original Assignee
Wuxi Xinhan Electronic Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuxi Xinhan Electronic Technology Co ltd filed Critical Wuxi Xinhan Electronic Technology Co ltd
Priority to CN202221398276.6U priority Critical patent/CN217881415U/en
Application granted granted Critical
Publication of CN217881415U publication Critical patent/CN217881415U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

The utility model discloses a gaseous air inlet unit of etching machine, the center department of quartzy dish rotates and is connected with the spiral arm, the air feed arm is installed to the bottom of spiral arm, the first air supply mouth of a plurality of has been seted up to the bottom of air feed arm, a plurality of second air supply mouth has been seted up to the side of air feed arm, the top of spiral arm is responsible for through rotary interface and air feed and is connected, the inside of quartzy dish is encircleed the spiral arm and has been seted up the drive chamber, cup joint on the spiral arm and be fixed with the driven gear who is located drive intracavity portion, one side meshing of driven gear is connected with the driving gear, the driving gear rotates through the pivot and connects the inside in drive chamber, the top of pivot is connected with the gear drive case transmission of fixing at quartzy dish top, the power input shaft and the motor drive of gear case are connected. The utility model discloses a spiral arm drives the air feed arm and rotates in the bottom of quartz plate, makes the air current distribute evenly in reaction chamber, reduces because the uneven influence to the technology result of air current distribution, improves semiconductor device surface machining treatment quality.

Description

Gas inlet device of etching machine
Technical Field
The utility model relates to an etching machine technical field specifically is a gaseous air inlet unit of etching machine.
Background
The plasma etcher is also called a plasma etcher, a plasma plane etcher, a plasma surface treatment instrument, a plasma cleaning system and the like. Plasma etching, the most common form of dry etching, is based on the principle that a gas exposed to an electron field forms a plasma, thereby generating ionized gas and a gas composed of released energetic electrons, thereby forming a plasma or ions, and atoms of the ionized gas, when accelerated by an electric field, release sufficient force to tightly adhere to a material or etch a surface with surface expulsion force.
In the prior art, a gas inlet mode is adopted at the upper part of a reaction chamber, a gas inlet nozzle is additionally arranged on a quartz disc of the reaction chamber, gas is supplied into the reaction chamber through the gas inlet nozzle, but the gas is uniform, the intermediate effect is serious, the intermediate effect expressed on an etching result can be generated in the process, and the product quality is influenced. Therefore, it is necessary to design a gas inlet device of the etching machine.
SUMMERY OF THE UTILITY MODEL
To the above situation, for overcoming prior art's defect, the utility model provides a gaseous air inlet unit of etching machine, the utility model discloses a spiral arm drives the air feed arm and rotates in the bottom of quartzy dish, makes the air current distribute evenly in reaction chamber, reduces because the uneven influence to the technology result of air current distribution, improves semiconductor device surface machining treatment quality.
In order to achieve the above purpose, the utility model provides a following technical scheme: the utility model provides a gaseous air inlet unit of etching machine, includes the quartz plate, the center department of quartz plate rotates and is connected with the spiral arm, the air feed arm is installed to the bottom of spiral arm, the first air supply mouth of a plurality of has been seted up to the bottom of air feed arm, a plurality of second air supply mouth has been seted up to the side of air feed arm, the top of spiral arm is responsible for through rotary interface and air feed and is connected, the air feed passageway that intercommunication second air supply mouth, first air supply mouth and air feed were responsible for is seted up to the inside of air feed arm and spiral arm, the drive chamber has been seted up around the spiral arm to the inside of quartz plate, cup joint on the spiral arm and be fixed with the driven gear who is located the drive intracavity portion, one side meshing of driven gear is connected with the driving gear, the driving gear rotates the inside of connecting in the drive chamber through the pivot, the top of pivot is connected with the gear drive case transmission at quartz plate top, the input and the motor of gear case are connected.
Preferably, the first air supply ports are equidistantly formed in the bottom of the air supply arm, and the first air supply ports and the second air supply ports are installed in a staggered mode.
Preferably, a positioning frame for fixing the gas supply main pipe is arranged at the top of the quartz plate.
Preferably, a sealing ring is arranged at the joint of the spiral arm and the quartz disc.
Preferably, an air inlet valve is installed on the air supply main pipe.
Preferably, an annular groove is formed in the periphery of the bottom of the quartz disc, a sliding block fixed to the top end of the air supply arm slides inside the annular groove, and rolling wheels sliding inside the annular groove are installed on two sides of the sliding block.
The utility model has the advantages that:
1. the gas supply arm is driven to rotate at the bottom of the quartz plate by the spiral arm, so that gas flow is uniformly distributed in the reaction chamber, the influence on a process result due to nonuniform gas flow distribution is reduced, and the surface processing quality of a semiconductor device is improved;
2. the sliding block slides in the annular groove, so that the movement of the air supply arm is limited, and the movement stability of the air supply arm is improved.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic view of the overall plane structure of the present invention;
FIG. 2 is a schematic view of the installation plane structure of the air supply channel of the present invention;
FIG. 3 is an enlarged schematic plan view of the area A of FIG. 1 according to the present invention;
the reference numbers in the figures: 1. a quartz plate; 2. an air supply arm; 3. a second air supply port; 4. a first air supply port; 5. a drive chamber; 6. a swing arm; 7. a driven gear; 8. a driving gear; 9. a rotating shaft; 10. a gear transmission case; 11. A motor; 12. a rotary interface; 13. a main gas supply pipe; 14. a positioning frame; 15. an intake valve; 16. a seal ring; 17. a gas supply channel; 18. an annular groove; 19. a slider; 20. and (4) a roller.
Detailed Description
In the following, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature.
The technical solution of the present invention will be clearly and completely described with reference to the accompanying drawings.
Example one
Given by fig. 1 and fig. 2, the utility model provides the following technical solutions: a gas inlet device of an etching machine comprises a quartz plate 1, wherein a spiral arm 6 is rotatably connected at the center of the quartz plate 1, a gas supply arm 2 is installed at the bottom of the spiral arm 6, a plurality of first gas supply ports 4 are formed at the bottom of the gas supply arm 2, a plurality of second gas supply ports 3 are formed in the side edge of the gas supply arm 2, the top end of the spiral arm 6 is connected with a gas supply main pipe 13 through a rotary interface 12, gas supply channels 17 communicated with the second gas supply ports 3, the first gas supply ports 4 and the gas supply main pipe 13 are formed in the gas supply arm 2 and the spiral arm 6, a driving cavity 5 is formed in the quartz plate 1 surrounding the spiral arm 6, a driven gear 7 positioned in the driving cavity 5 is fixedly sleeved on the spiral arm 6, a driving gear 8 is meshed with one side of the driven gear 7, and the driving gear 8 is rotatably connected in the driving cavity 5 through a rotating shaft 9, the top of pivot 9 is connected with the gear drive case 10 transmission of fixing at quartz plate 1 top, the input and the motor 11 of gear drive case 10 are connected, open admission valve 15, process gas enters into the inside of air feed channel 17 through air feed main pipe 13, get into in the reaction chamber through second air feed port 3 and first air feed port 4, motor 11 work simultaneously, drive pivot 9 through gear drive case 10 and rotate, thereby drive driving gear 8 and rotate, and then drive driven gear 7 rotatory, then drive air feed arm 2 through spiral arm 6 and rotate in the bottom of quartz plate 1, make the air current distribute evenly in the reaction chamber, reduce because the influence of the air current uneven distribution to the technology result, improve semiconductor device surface machining treatment quality.
Preferably, the first air supply ports 4 are opened at the bottom of the air supply arm 2 at equal intervals, and the first air supply ports 4 and the second air supply ports 3 are installed to be shifted from each other.
Preferably, a positioning frame 14 for fixing the gas supply main pipe 13 is mounted on the top of the quartz plate 1, and plays a role in positioning the gas supply main pipe 13.
Preferably, a sealing ring 16 is provided at the junction of the radial arm 6 and the quartz plate 1 to prevent leakage of the process gas.
Preferably, the air supply main pipe 13 is provided with an air inlet valve 15.
Example two
Referring to fig. 1 and fig. 3, as another preferred embodiment, the difference from the first embodiment is that an annular groove 18 is formed around the bottom of the quartz plate 1, a sliding block 19 fixed at the top end of the air supply arm 2 slides inside the annular groove 18, rollers 20 sliding inside the annular groove 18 are installed on both sides of the sliding block 19, and the sliding block 19 slides inside the annular groove 18, so that the movement of the air supply arm 2 is limited, and the movement stability of the air supply arm 2 is improved.
The working principle is as follows:
the air inlet valve 15 is opened, the process gas enters the inside of the air supply channel 17 through the air supply main pipe 13 and enters the reaction chamber through the second air supply port 3 and the first air supply port 4, meanwhile, the motor 11 works and drives the rotating shaft 9 to rotate through the gear transmission box 10, so that the driving gear 8 is driven to rotate and further the driven gear 7 is driven to rotate, then the air supply arm 2 is driven to rotate at the bottom of the quartz plate 1 through the spiral arm 6, the air flow is uniformly distributed in the reaction chamber, the influence on the process result due to the nonuniform air flow distribution is reduced, and the surface processing quality of a semiconductor device is improved.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described above, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (6)

1. The utility model provides a gaseous air inlet unit of etching machine, includes quartz plate (1), the center department of quartz plate (1) rotates and is connected with spiral arm (6), air feed arm (2) are installed to the bottom of spiral arm (6), first air feed mouth (4) of a plurality of have been seted up to the bottom of air feed arm (2), a plurality of second air feed mouth (3) have been seted up to the side of air feed arm (2), the top of spiral arm (6) is responsible for (13) through rotary joint (12) and air feed and is connected, air feed passageway (17) that intercommunication second air feed mouth (3), first air feed mouth (4) and air feed are responsible for (13), its characterized in that are seted up to the inside of air feed arm (2) and spiral arm (6): drive chamber (5) have been seted up around radial arm (6) in the inside of quartz capsule (1), cup joint on radial arm (6) and be fixed with driven gear (7) that are located drive chamber (5) inside, one side meshing of driven gear (7) is connected with driving gear (8), driving gear (8) rotate the inside of connecting in drive chamber (5) through pivot (9), the top of pivot (9) is connected with the transmission of gear drive case (10) of fixing at quartz capsule (1) top, the input and the motor (11) of gear drive case (10) are connected.
2. The gas inlet device of the etching machine according to claim 1, wherein: the first air supply ports (4) are arranged at the bottom of the air supply arm (2) at equal intervals, and the first air supply ports (4) and the second air supply ports (3) are installed in a staggered mode.
3. The gas inlet device of the etching machine according to claim 1, wherein: and a positioning frame (14) for fixing the gas supply main pipe (13) is arranged at the top of the quartz disc (1).
4. The gas inlet device of the etching machine as claimed in claim 1, wherein: and a sealing ring (16) is arranged at the joint of the spiral arm (6) and the quartz disc (1).
5. The gas inlet device of the etching machine as claimed in claim 1, wherein: and an air inlet valve (15) is arranged on the air supply main pipe (13).
6. The gas inlet device of the etching machine as claimed in claim 1, wherein: annular grooves (18) are formed in the periphery of the bottom of the quartz disc (1), sliding blocks (19) fixed to the top end of the air supply arm (2) slide in the annular grooves (18), and rollers (20) sliding in the annular grooves (18) are installed on the two sides of the sliding blocks (19).
CN202221398276.6U 2022-06-06 2022-06-06 Gaseous air inlet unit of etching machine Active CN217881415U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202221398276.6U CN217881415U (en) 2022-06-06 2022-06-06 Gaseous air inlet unit of etching machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202221398276.6U CN217881415U (en) 2022-06-06 2022-06-06 Gaseous air inlet unit of etching machine

Publications (1)

Publication Number Publication Date
CN217881415U true CN217881415U (en) 2022-11-22

Family

ID=84094179

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202221398276.6U Active CN217881415U (en) 2022-06-06 2022-06-06 Gaseous air inlet unit of etching machine

Country Status (1)

Country Link
CN (1) CN217881415U (en)

Similar Documents

Publication Publication Date Title
JP2934565B2 (en) Semiconductor manufacturing apparatus and semiconductor manufacturing method
JP6691636B2 (en) Cathode unit for sputtering equipment
JP3935231B2 (en) Sputtering equipment
JP4847136B2 (en) Vacuum processing equipment
WO2021239055A1 (en) Rotating platform for ion beam etching
CN217881415U (en) Gaseous air inlet unit of etching machine
CN112593208B (en) Semiconductor processing equipment
CN208716441U (en) A kind of quantitative device for discharging
TWI738284B (en) Rotatable faraday cleaning device and plasma processing system
JP2022543570A (en) isolation valve
TW201818442A (en) Plasma processing device
JP2003142415A (en) Plasma treatment device
CN213613523U (en) Mechanism for continuously absorbing dust in rotation process and rolling groove equipment
CN210022552U (en) Double-rotating nozzle for cleaning particles on surface of wafer
CN108624955A (en) Reaction chamber and epitaxial growth equipment
CN208189541U (en) A kind of wet process equipment dynamic etch medicine liquid spray device
TWI704017B (en) Double-rotation nozzle for cleaning wafer surface particles
JP2002280373A (en) Substrate processing apparatus
CN209800763U (en) Rotary air guide disc
JP3610808B2 (en) Thin film manufacturing equipment
CN217242513U (en) Air distributing mechanism and sugar blowing machine thereof
JP4287579B2 (en) Plasma processing apparatus and method
CN116631834B (en) Surface modification treatment equipment and modification treatment method
CN217933706U (en) Device for improving uniformity of dry photoresist removing process
CN215050653U (en) PVD (physical vapor deposition) cluster rotating target holder and coating device

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant