CN216390949U - Pulse width modulation power thick film circuit - Google Patents
Pulse width modulation power thick film circuit Download PDFInfo
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- CN216390949U CN216390949U CN202122989074.0U CN202122989074U CN216390949U CN 216390949 U CN216390949 U CN 216390949U CN 202122989074 U CN202122989074 U CN 202122989074U CN 216390949 U CN216390949 U CN 216390949U
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- thick film
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Abstract
The utility model discloses a pulse width modulation power thick film circuit, which comprises a substrate, wherein a pulse width modulation power circuit is printed on the substrate through a silk screen; the pulse width modulation power circuit comprises a PWM control circuit and an output power amplifying circuit; the PWM control circuit comprises a voltage pulse width conversion module and a switching power amplification module; the substrate is provided with an anti-interference circuit corresponding to the PWM control circuit; the anti-interference circuit comprises an inductance coil L1, a capacitor C1 and a resistor R1, wherein the inductance coil L1, the capacitor C1 and the resistor R1 are connected into an annular anti-interference circuit through a lead; the utility model provides an integral structure of a pulse width modulation power thick film circuit, which is characterized in that the pulse width modulation power circuit is printed on a substrate through a screen; the pulse width modulation power circuit comprises a PWM control circuit and an output power amplifying circuit, and realizes the pulse width modulation function; the thick film circuit has high stability and durability due to its structure.
Description
Technical Field
The utility model relates to the technical field of thick film circuits, in particular to a pulse width modulation power thick film circuit.
Background
A thick film circuit is an integrated circuit formed by fabricating a passive network on the same substrate by using an array film process (screen printing, sintering, electroplating, etc.) and assembling discrete semiconductor devices, monolithic integrated circuits, or micro-devices. A film having a thickness of several micrometers to several tens of micrometers is generally considered to be a thick film, and materials for making the thick film are five kinds of pastes of a conductor, a resistor, a dielectric, an insulator, and an encapsulation. The thick film integrated circuit has simple and convenient process, low cost and larger power resistance, but the types and numerical value ranges of elements manufactured by the thick film integrated circuit are limited to a certain extent;
the stability of the pulse width modulation power circuit of the traditional integrated thick film circuit is not ideal, and the pulse width modulation power thick film circuit is provided by the inventor by combining various factors.
SUMMERY OF THE UTILITY MODEL
The technical problem to be solved by the utility model is that the traditional pulse width modulation power circuit has poor stability.
The utility model provides the following technical scheme:
a pulse width modulation power thick film circuit comprises a substrate, wherein the substrate is printed with a pulse width modulation power circuit through a silk screen;
the pulse width modulation power circuit comprises a PWM control circuit and an output power amplifying circuit; the PWM control circuit comprises a voltage pulse width conversion module and a switching power amplification module; the substrate is provided with an anti-interference circuit corresponding to the PWM control circuit;
the anti-interference circuit comprises an inductance coil L1, a capacitor C1 and a resistor R1, wherein the inductance coil L1, the capacitor C1 and the resistor R1 are connected into an annular anti-interference circuit through leads.
When the pulse width modulation power circuit works, the pulse width modulation power circuit is printed on the substrate through a screen printing mode; the pulse width modulation power circuit comprises a PWM control circuit and an output power amplifying circuit, and realizes the pulse width modulation function; the thick film circuit has high stability and durability due to its structure.
As a further scheme of the utility model: and a damping heat dissipation structure is arranged on the other side of the substrate corresponding to the pulse width modulation power circuit.
As a further scheme of the utility model: the damping heat dissipation structure comprises heat dissipation fins and a damping disc bin, wherein the heat dissipation fins are uniformly arranged on the back side of the substrate, the damping disc bin is fixed on the back side of the substrate, and damping liquid is filled in the damping disc bin; the radiating fins extend into the damping disc bin, and are matched with damping liquid in the damping disc bin to realize damping vibration attenuation and have a radiating effect.
As a further scheme of the utility model: the radiating fins are provided with radiating through holes, so that damping and radiating effects are improved.
As a further scheme of the utility model: the substrate is a ceramic substrate.
As a further scheme of the utility model: the magnetic core strip is filled in the middle of the inductance coil L1, and the anti-electromagnetic interference capacity is improved.
As a further scheme of the utility model: copper powder is adopted as conductor slurry on the substrate, and ceramic powder is adopted as capacitor medium and insulating slurry;
compared with the prior art, the utility model has the following beneficial effects:
1. the utility model provides an integral structure of a pulse width modulation power thick film circuit, which is characterized in that the pulse width modulation power circuit is printed on a substrate through a screen; the pulse width modulation power circuit comprises a PWM control circuit and an output power amplifying circuit, and realizes the pulse width modulation function; the stability and durability of the thick film circuit are high due to the structure of the thick film circuit;
2. the utility model further cooperates with the anti-interference circuit to design, carry on the peripheral anti-electromagnetic interference to the power thick film circuit of pulse width modulation, in addition the utility model further damps the heat-dissipating structure, carry on the damped shock-proof heat dissipation to the power thick film circuit of pulse width modulation at the same time, further raise the stability of the power thick film circuit of pulse width modulation.
Drawings
Fig. 1 is a schematic structural diagram of a pulse width modulation power thick film circuit.
Fig. 2 is a schematic structural diagram of an anti-interference circuit in a pulse width modulation power thick film circuit.
Fig. 3 is a schematic structural diagram of a damping heat dissipation structure in a pwm power thick film circuit.
Detailed Description
The technical solution of the present patent will be described in further detail with reference to the following embodiments.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and are not intended to limit the utility model.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, as they may be fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1-3, a pwm power thick film circuit includes a substrate 100, a pwm power circuit 200 screen-printed on the substrate 100;
the pulse width modulation power circuit 200 comprises a PWM control circuit 201 and an output power amplifying circuit 202; the PWM control circuit 201 includes a voltage pulse width conversion module 2011 and a switching power amplification module 2022; the substrate 100 is provided with an anti-interference circuit 300 corresponding to the PWM control circuit 201;
the anti-jamming circuit 300 comprises an inductance coil L1, a capacitor C1 and a resistor R1, wherein the inductance coil L1, the capacitor C1 and the resistor R1 are connected into an annular anti-jamming circuit through conducting wires.
The other side of the substrate 100 corresponding to the pwm power circuit 200 is provided with a damping heat dissipation structure.
The damping heat dissipation structure 400 comprises heat dissipation fins 401 and a damping disc bin 402, wherein the heat dissipation fins 401 are uniformly arranged on the back side of the substrate 100, the damping disc bin 402 is fixed on the back side of the substrate 100, and damping liquid is filled in the damping disc bin; the heat sink fins 401 extend into the damping disc cartridge 402.
The heat dissipating fins 401 are provided with heat dissipating through holes 4011.
The substrate 100 is a ceramic substrate.
The middle of the inductance coil L1 is filled with a magnetic core strip 301.
Copper powder is used as the conductive paste on the substrate 100, and ceramic powder is used as the capacitor dielectric and the insulating paste.
The working principle of the utility model is as follows: the utility model provides an integral structure of a pulse width modulation power thick film circuit, which is characterized in that the pulse width modulation power circuit is printed on a substrate through a screen; the pulse width modulation power circuit comprises a PWM control circuit and an output power amplifying circuit, and realizes the pulse width modulation function; the stability and durability of the thick film circuit are high due to the structure of the thick film circuit; the utility model further cooperates with the anti-interference circuit to design, carry on the peripheral anti-electromagnetic interference to the power thick film circuit of pulse width modulation, in addition the utility model further damps the heat-dissipating structure, carry on the damped shock-proof heat dissipation to the power thick film circuit of pulse width modulation at the same time, further raise the stability of the power thick film circuit of pulse width modulation.
Although the preferred embodiments of the present patent have been described in detail, the present patent is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present patent within the knowledge of those skilled in the art.
Claims (7)
1. The pulse width modulation power thick film circuit is characterized by comprising a substrate, wherein the pulse width modulation power circuit is printed on the substrate through a silk screen;
the pulse width modulation power circuit comprises a PWM control circuit and an output power amplifying circuit; the PWM control circuit comprises a voltage pulse width conversion module and a switching power amplification module; the substrate is provided with an anti-interference circuit corresponding to the PWM control circuit; the anti-interference circuit comprises an inductance coil L1, a capacitor C1 and a resistor R1, wherein the inductance coil L1, the capacitor C1 and the resistor R1 are connected into an annular anti-interference circuit through leads.
2. The pwm power thick film circuit of claim 1, wherein a heat sink structure is disposed on the substrate corresponding to the other side of the pwm power circuit.
3. The pwm power thick film circuit according to claim 2, wherein the damping heat dissipation structure comprises heat dissipation fins and damping disk chamber, the heat dissipation fins are uniformly arranged on the back side of the substrate, the damping disk chamber is fixed on the back side of the substrate, and the damping disk chamber is filled with damping fluid; the radiating fins extend into the damping disc bin.
4. The PWM power thick film circuit of claim 3, wherein the heat dissipating fins are provided with heat dissipating through holes.
5. The pwm power thick film circuit of claim 4, wherein said substrate is a ceramic substrate.
6. The PWM power thick film circuit of claim 5, wherein the inductor L1 is filled with magnetic core strips in the middle.
7. The PWM power thick film circuit of claim 6, wherein the conductive paste on the substrate is copper powder, the capacitor dielectric is ceramic powder and the insulating paste is ceramic powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122989074.0U CN216390949U (en) | 2021-12-01 | 2021-12-01 | Pulse width modulation power thick film circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122989074.0U CN216390949U (en) | 2021-12-01 | 2021-12-01 | Pulse width modulation power thick film circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216390949U true CN216390949U (en) | 2022-04-26 |
Family
ID=81219493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122989074.0U Active CN216390949U (en) | 2021-12-01 | 2021-12-01 | Pulse width modulation power thick film circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216390949U (en) |
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2021
- 2021-12-01 CN CN202122989074.0U patent/CN216390949U/en active Active
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