CN218101251U - Double-sided radiating power module - Google Patents

Double-sided radiating power module Download PDF

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Publication number
CN218101251U
CN218101251U CN202222432025.1U CN202222432025U CN218101251U CN 218101251 U CN218101251 U CN 218101251U CN 202222432025 U CN202222432025 U CN 202222432025U CN 218101251 U CN218101251 U CN 218101251U
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metal plate
conductor
chip
connecting block
upper substrate
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CN202222432025.1U
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Chinese (zh)
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袁乙中
王明阳
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Leadrive Technology Shanghai Co Ltd
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Leadrive Technology Shanghai Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The utility model provides a double-sided heat dissipation power module, which relates to the field of power modules and comprises an upper substrate and a lower substrate, wherein the upper substrate is connected with an inner metal plate, and one end of the upper substrate is connected with a negative terminal; the lower substrate is connected with a left metal plate and a right metal plate which are oppositely arranged; a positive terminal and an output terminal are respectively connected with the gap; the upper substrate and the lower substrate are arranged in a laminated mode, so that the positive electrode terminal is opposite to the negative electrode terminal; the left metal plate and the right metal plate are respectively provided with a plurality of chips, and each chip is connected with the inner metal plate through a conductor cushion block; a conductor connecting block is arranged on one side, close to the left metal plate, of the right metal plate, and one end, far away from the right metal plate, of the conductor connecting block extends to be connected with the inner metal plate; the inner metal plate is provided with a through groove which circumferentially surrounds the chip arranged on the left metal plate and the conductor connecting block, and the problem of high stray inductance of a current conversion loop in the existing double-sided heat dissipation power module is solved.

Description

Double-sided radiating power module
Technical Field
The utility model relates to a power module field especially relates to a two-sided radiating power module.
Background
Compared with silicon devices, silicon carbide devices have larger forbidden bandwidth, higher switching speed and higher working junction temperature, and are widely applied to the fields of national defense and military industry, electric automobiles, new energy sources and the like. In order to fully utilize the advantages of SiC devices, the package structure of the double-sided heat dissipation module is popular because double-sided cooling can be performed to improve the heat dissipation performance of the module.
However, since the switching speed of the silicon-based IGBT is higher than that of the silicon-based IGBT, the silicon carbide MOSFET (metal-oxide semiconductor field effect transistor) is often limited in application by a voltage spike caused by stray inductance of the commutation loop, while the conventional double-sided heat dissipation module design only considers improvement of heat dissipation performance and does not optimally design the commutation loop, thereby resulting in higher stray inductance of the commutation loop.
SUMMERY OF THE UTILITY MODEL
In order to overcome the technical defect, the utility model aims to provide a double-sided radiating power module for solve the higher problem of stray inductance in the current conversion return circuit among the current double-sided radiating power module.
The utility model discloses a power module with double-sided heat dissipation,
the insulation board comprises an upper substrate and a lower substrate, wherein the upper substrate and the lower substrate respectively comprise an outer metal plate and an insulation plate;
the upper substrate is connected with an inner metal plate on one side of the insulating plate, which is far away from the outer metal plate, and one end of the inner metal plate is connected with a negative terminal;
the lower substrate is connected with a left metal plate and a right metal plate which are oppositely arranged on one side of the insulating plate, which is far away from the outer metal plate;
a gap is formed between the left metal plate and the right metal plate, and two ends of the left metal plate and the right metal plate, which are deviated from the two ends, are respectively connected with a positive terminal and an output terminal;
the upper substrate and the lower substrate are arranged in a laminated mode, so that the positive electrode terminal is opposite to the negative electrode terminal;
the left metal plate and the right metal plate are respectively provided with a plurality of chips, and each chip is connected with the inner metal plate through a conductor cushion block;
a conductor connecting block is arranged on one side, close to the left metal plate, of the right metal plate, and one end, far away from the right metal plate, of the conductor connecting block extends to be connected with the inner metal plate;
the inner metal plate is provided with a through groove which is circumferentially arranged around the chip and the conductor connecting block on the left metal plate, the inner metal plate is divided into an area which is surrounded by the through groove and is outside, so that current can reach the conductor connecting block from the area which is surrounded by the through groove and is outside, and the negative terminal is reached from the area which is surrounded by the through groove and is outside.
Preferably, the conductor pads connected to the respective chips on the left metal plate are connected to each other to form a whole;
and/or the conductor pads connected to the chips on the right metal plate are connected with each other to form a whole.
Preferably, one end of the conductor connecting block, which is far away from the right metal plate, is connected with a conductor cushion block on each chip connected to the left metal plate.
Preferably, the chip is fixed on the left metal plate or the right metal plate through a solder layer.
Preferably, two sides of each of the conductor pads are respectively fixed between the chip and the inner metal plate through solder layers.
Preferably, the upper substrate and the lower substrate are stacked to form a current loop, which sequentially passes through the left metal plate, the chip on the left metal plate, the conductor pad to the inner metal plate from the positive terminal, then passes through the conductor connecting block, the chip on the right metal plate, the conductor pad on the right metal plate, and reaches the inner metal plate, and finally bypasses an area including the chip arranged on the left metal plate and the conductor connecting block to the negative terminal on the inner metal plate.
Preferably, the upper substrate and the lower substrate are stacked to form a current loop which passes through the left metal plate, the chip on the left metal plate, the conductor pad to the conductor connecting block, the right metal plate, the chip on the right metal plate, the conductor pad, the inner metal plate from the positive terminal in sequence, and finally bypasses an area including the chip on the left metal plate and the conductor connecting block to the negative terminal on the inner metal plate.
The utility model also provides a power module with double-sided heat dissipation,
the insulation board comprises an upper substrate and a lower substrate, wherein the upper substrate and the lower substrate respectively comprise an outer metal plate and an insulation plate;
the upper substrate is connected with an inner metal plate on one side of the insulating plate, which is far away from the outer metal plate, and one end of the inner metal plate is connected with a negative terminal;
the lower substrate is connected with a left metal plate and a right metal plate which are oppositely arranged on one side of the insulating plate, which is far away from the outer metal plate;
a gap is formed between the left metal plate and the right metal plate, and two ends of the left metal plate and the right metal plate, which are deviated from the two ends, are respectively connected with a positive terminal and an output terminal;
the upper substrate and the lower substrate are arranged in a laminated mode, so that the positive electrode terminal is opposite to the negative electrode terminal;
the left metal plate and the right metal plate are respectively provided with a plurality of chips, and each chip on the right metal plate is respectively connected with the inner metal plate through a conductor cushion block;
a conductor connecting block is arranged on one side, close to the left metal plate, of the right metal plate, and one end, far away from the right metal plate, of the conductor connecting block extends to be connected with the inner metal plate;
and one end of the conductor connecting block, which is far away from the right metal plate, is connected with the conductor cushion blocks connected to the chips on the left metal plate.
Preferably, the conductor pads on the respective chips on the left metal plate are connected to each other to form a whole.
Preferably, the upper substrate and the lower substrate are stacked to form a current loop from the positive terminal to the negative terminal sequentially through the left metal plate, the chip on the left metal plate, the conductor pad to the conductor connection block, the right metal plate, the chip on the right metal plate, the conductor pad, the inner metal plate and the inner metal plate.
After the technical scheme is adopted, compared with the prior art, the method has the following beneficial effects:
the utility model provides a double-sided radiating power module, through making the power module inside part utilize about the base plate realize that the commutation return circuit is range upon range of, partly forms two return circuit current route, more effectively utilizes inside upper substrate of module and infrabasal plate structure, effectively reduces the stray inductance in the current return circuit, utilizes the insulation board heat dissipation on upper substrate and the infrabasal plate simultaneously, realizes the double-sided heat dissipation, can obtain good heat dispersion.
Drawings
Fig. 1 is a schematic structural diagram of a first embodiment of a double-sided heat dissipation power module according to the present invention;
fig. 2 is a schematic structural diagram illustrating a structure of a double-sided heat dissipation power module according to an embodiment of the present invention, in which the inner metal plate, the left metal plate, and the right metal plate are integrated;
fig. 3 is a schematic structural diagram of a stacked arrangement of an upper substrate and a lower substrate in a first embodiment of a double-sided heat dissipation power module according to the present invention;
fig. 4 is a schematic structural diagram of a current loop in a first embodiment of a double-sided heat dissipation power module according to the present invention;
fig. 5 is a schematic structural diagram of a conductor pad and a conductor connecting plate in a second embodiment or a third embodiment of a double-sided heat dissipation power module according to the present invention;
fig. 6 is a schematic diagram of a current loop structure in a second embodiment or a third embodiment of a double-sided heat dissipation power module according to the present invention.
Reference numerals are as follows:
1-an upper substrate; 11-inner metal sheet; 12-a negative terminal; 2-lower substrate; 21-left metal plate; 22-right metal plate; 23-a positive terminal; 24-an output terminal; 3-a chip; 4-conductor spacer block; 5-a conductor connection board; 6-through groove.
Detailed Description
The advantages of the present invention will be further explained with reference to the accompanying drawings and specific embodiments.
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the exemplary embodiments below are not intended to represent all implementations consistent with the present disclosure. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the disclosure, as detailed in the appended claims.
The terminology used in the disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used in this disclosure and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
It should be understood that although the terms inner metal plate, left metal plate, right metal plate, etc. may be used in the present disclosure to describe various information, the information should not be limited to these terms, which are used only to distinguish one type of information from another. The word "if," as used herein, may be interpreted as "at … …" or "at … …" or "in response to a determination," depending on the context.
In the description of the present invention, it is to be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
In the description of the present invention, unless otherwise specified and limited, it is to be noted that the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, mechanically or electrically connected, or may be connected between two elements through an intermediate medium, or may be directly connected or indirectly connected, and specific meanings of the terms may be understood by those skilled in the art according to specific situations.
In the following description, suffixes such as "module", "part", or "unit" used to indicate elements are used only for the convenience of description of the present invention, and have no specific meaning in itself. Thus, "module" and "component" may be used in a mixture.
The first embodiment is as follows: the utility model provides a double-sided heat dissipation power module, refer to fig. 1-4, including upper substrate and infrabasal plate, wherein, upper substrate and infrabasal plate all include outer metal sheet and insulation board, specifically, this outer metal sheet can be the copper, the insulation board can be the ceramic plate, following inner metal sheet is in, left metal sheet, right metal sheet also can be the copper; the upper substrate is connected with an inner metal plate on one side of the insulating plate, which is far away from the outer metal plate, and one end of the inner metal plate is connected with a negative terminal; the lower substrate is connected with a left metal plate and a right metal plate which are oppositely arranged on one side of the insulating plate, which is far away from the outer metal plate, the left metal plate and the right metal plate can be consistent in shape and respectively cover a left area and a right area on the lower substrate; the left metal plate and the right metal plate are provided with a gap, so that the left metal plate and the right metal plate form an open circuit, current cannot directly reach the right metal plate from the left metal plate, the size of the gap can be preset, and two ends of the left metal plate and the right metal plate, which are deviated from the two ends, are respectively connected with a positive terminal and an output terminal.
The upper substrate and the lower substrate are arranged in a laminated mode, so that the positive electrode terminal and the negative electrode terminal are opposite, namely, the positive electrode terminal and the negative electrode terminal of the connecting capacitor are laminated; the left metal plate and the right metal plate are respectively provided with a plurality of chips, and each chip is connected with the inner metal plate through a conductor cushion block; a conductor connecting block is arranged on one side, close to the left metal plate, of the right metal plate, one end, far away from the right metal plate, of the conductor connecting block extends to be connected with the inner metal plate, and the conductor cushion block and the conductor connecting block can be metal blocks, such as copper blocks; the inner metal plate is provided with a through groove circumferentially surrounding the chip and the conductor connecting block which are arranged on the left metal plate, the through groove enables an annular gap to be formed in the inner metal plate, an insulating layer of the upper substrate is exposed, and therefore a control is formed in the direction of current, the current reaches the conductor connecting block from the area, surrounding the inner part, of the through groove in the inner metal plate, and the current reaches the negative terminal from the area, surrounding the outer part, of the through groove in the inner metal plate.
In the above embodiment, due to the arrangement of the through slots, the inner metal plate is divided into an area inside the through slot surrounding and an area outside the through slot surrounding, when a current passes through a chip (which may be referred to as an upper bridge chip) on the left metal plate, the current passes through the inner area surrounded by the through slots, and the current passes through a chip (which may be referred to as a lower bridge chip, and may or may not be identical to the type of the upper bridge chip, where the upper bridge chip and the lower bridge chip express positions only for distinguishing arrangement), then the current in two directions can be separated through the outer area surrounded by the through slots, so that the current cannot directly pass through the inner metal plate from the chip on the left metal plate to the chip on the right metal plate, but pass through the conductor connecting block to the chip on the right metal plate, and finally pass through the outer area surrounded by the through slots on the metal plate to reach the negative terminal, so as to form a stacked current loop, the current-converting inner substrate is stacked inside the module as much as possible, and a dual-loop structure is adopted at a connection position of the inner metal plate, so that a part inside the power module is realized by the stacked upper and a stacked current-converting substrate, so as to form a dual-loop inductor loop, thereby reducing stray current conversion inductance.
Specifically, referring to fig. 3 and 4, the upper substrate and the lower substrate are stacked to form a current loop, which sequentially passes through the left metal plate, the chip on the left metal plate, the conductor pad to the inner metal plate (the inner region surrounded by the through groove), the conductor connection block, the chip on the right metal plate, the conductor pad to the inner metal plate, and finally the inner metal plate to the negative terminal by bypassing the region (i.e., the outer region surrounded by the through groove) including the chip arranged on the left metal plate and the conductor connection block. Through designing upper substrate and infrabasal plate and forming two return circuit current path, more effectively utilize inside upper substrate of module and infrabasal plate structure, reduce stray inductance, the insulation board on upper substrate and the infrabasal plate adopts the ceramic plate simultaneously, realizes two-sided heat radiation structure, and the chip that is located left metal sheet and right metal sheet (be upper and lower bridge chip) has all kept the same heat dissipation route, can obtain good heat dispersion.
In this embodiment, the chip is fixed to the left metal plate or the right metal plate through the solder layer, and two sides of each conductor pad are respectively fixed between the chip and the inner metal plate through the solder layer, that is, the conductor pads and the conductor connection block are respectively connected through a laser welding process.
In the present embodiment, it is preferable that the conductor pads connected to the respective chips on the left metal plate are integrally connected to each other; and/or the conductor cushion blocks connected on each chip on the right metal plate are connected with each other to form a whole, namely the conductor cushion blocks connected on each chip on the left metal plate and each chip on the right metal plate can be connected with each other to form a conductor cushion block with a larger whole area, and the current loop is not influenced.
Example two: the difference between the power module with double-sided heat dissipation and the first embodiment is that, referring to fig. 5 and 6, conductor pads connected to each chip on the left metal plate are connected to form a whole, and one end of the conductor connection block, which is far away from the right metal plate, is connected to the conductor pads connected to each chip on the left metal plate to form a copper strip (Cu-clip) structure, the conductor connection block can be arranged obliquely, and at this time, two current paths can be formed on the inner metal plate inside and outside the through groove in a surrounding manner or respectively.
Specifically, the upper substrate and the lower substrate are stacked to form a current loop which sequentially passes through the left metal plate, the chip on the left metal plate, the conductor pad to the conductor connecting block, the right metal plate, the chip on the right metal plate, the conductor pad and the inner metal plate from the positive terminal, and finally bypasses an area including the chip on the left metal plate and the conductor connecting block to the negative terminal on the inner metal plate, that is, the current in the current loop can directly reach the conductor connecting block through the conductor pad on the chip on the left metal plate.
Example three: the present embodiment further provides a power module with double-sided heat dissipation, and it should be noted that, the difference between the power module and the first embodiment and the second embodiment is that, referring to fig. 5 and fig. 6, a through groove does not need to be additionally formed on the inner metal plate, the conductor pad block located on the chip of the left metal plate is directly connected to the conductor connection block, so that a current does not need to pass through the inner metal plate in a process from the chip on the left metal plate to the chip on the right metal plate (i.e., directly pass through the conductor pad block and the conductor connection block on the chip of the left metal plate) (i.e., similar copper strip structure as in the second embodiment), and after the current passes through the chip on the right metal plate (i.e., the lower bridge chip), the current reaches the negative terminal through the inner metal plate, thereby a double-layer current path can be formed at the upper bridge chip, and the ceramic plates respectively disposed on the upper substrate and the lower substrate achieve double-sided heat dissipation.
The display panel comprises an upper substrate and a lower substrate, wherein the upper substrate and the lower substrate respectively comprise an outer metal plate and an insulating plate; the upper substrate is connected with an inner metal plate on one side of the insulating plate, which is far away from the outer metal plate, and one end of the inner metal plate is connected with a negative terminal; the lower substrate is connected with a left metal plate and a right metal plate which are oppositely arranged on one side of the insulating plate, which is far away from the outer metal plate; a gap is formed between the left metal plate and the right metal plate, and two ends of the left metal plate and the right metal plate, which are deviated from the two ends, are respectively connected with a positive terminal and an output terminal; the upper substrate and the lower substrate are arranged in a laminated mode, so that the positive electrode terminal is opposite to the negative electrode terminal; the left metal plate and the right metal plate are respectively provided with a plurality of chips, and each chip on the right metal plate is respectively connected with the inner metal plate through a conductor cushion block; a conductor connecting block is arranged on one side, close to the left metal plate, of the right metal plate, and one end, far away from the right metal plate, of the conductor connecting block extends to be connected with the inner metal plate; and one end of the conductor connecting block, which is far away from the right metal plate, is connected with the conductor cushion blocks connected to the chips on the left metal plate.
As a description, in this embodiment, since the current does not pass through the inner metal plate from the chip on the left metal plate to the chip on the right metal plate, the conductor connection block on the chip on the left metal plate may not be connected to the inner metal plate, or may be connected to the inner metal plate through an insulating layer, or may be configured to achieve the effect of using the through-groove isolation as in the second embodiment, thereby avoiding the situation that the current directly reaches the chip on the right metal plate from the chip on the left metal plate through the inner metal plate, and the current loop cannot be formed.
In this embodiment, it is preferable that the conductor pads on the respective chips on the left metal plate are integrally connected to each other, and thus the conductor connection block may be directly connected to the nearest conductor pad. Based on the above design of this embodiment, the upper substrate and the lamination of lower base plate set up and form and pass through chip, conductor cushion to conductor connecting block, chip, conductor cushion on right metal sheet, the right metal sheet on the left metal sheet in proper order by the positive terminal, reach interior metal sheet, to the current loop of negative terminal, reduce stray inductance when realizing two-sided radiating effect.
It should be noted that the embodiments of the present invention have better practicability and are not intended to limit the present invention in any way, and any person skilled in the art may change or modify the technical contents disclosed above to equivalent effective embodiments, but all the modifications or equivalent changes and modifications made to the above embodiments according to the technical spirit of the present invention still fall within the scope of the technical solution of the present invention.

Claims (10)

1. The utility model provides a two-sided radiating power module which characterized in that:
the insulation board comprises an upper substrate and a lower substrate, wherein the upper substrate and the lower substrate respectively comprise an outer metal plate and an insulation plate;
the upper substrate is connected with an inner metal plate on one side of the insulating plate, which is far away from the outer metal plate, and one end of the inner metal plate is connected with a negative terminal;
the lower substrate is connected with a left metal plate and a right metal plate which are oppositely arranged on one side of the insulating plate, which is far away from the outer metal plate;
a gap is formed between the left metal plate and the right metal plate, and two ends of the left metal plate and the right metal plate, which are deviated from the two ends, are respectively connected with a positive terminal and an output terminal;
the upper substrate and the lower substrate are arranged in a laminated mode, so that the positive electrode terminal is opposite to the negative electrode terminal;
the left metal plate and the right metal plate are respectively provided with a plurality of chips, and each chip is connected with the inner metal plate through a conductor cushion block;
a conductor connecting block is arranged on one side, close to the left metal plate, of the right metal plate, and one end, far away from the right metal plate, of the conductor connecting block extends to be connected with the inner metal plate;
the inner metal plate is provided with a through groove which is circumferentially arranged around the chip and the conductor connecting block on the left metal plate, the inner metal plate is divided into an area which is surrounded by the through groove and is outside, so that current can reach the conductor connecting block from the area which is surrounded by the through groove and is outside, and the negative terminal is reached from the area which is surrounded by the through groove and is outside.
2. The power module of claim 1, wherein:
the conductor cushion blocks connected to the chips on the left metal plate are connected with each other to form a whole;
and/or the conductor cushion blocks connected with the chips on the right metal plate are connected with each other to form a whole.
3. The power module according to claim 1 or 2, characterized in that:
one end of the conductor connecting block, which is far away from the right metal plate, is connected with the conductor cushion blocks connected to the chips on the left metal plate.
4. The power module of claim 1, wherein:
the chip is fixed on the left metal plate or the right metal plate through a solder layer.
5. The power module of claim 1, wherein:
and two sides of each conductor cushion block are respectively fixed between the chip and the inner metal plate through solder layers.
6. The power module of claim 1, wherein:
the upper substrate and the lower substrate are stacked to form a current loop which sequentially passes through the left metal plate, the chip on the left metal plate, the conductor cushion block to the inner metal plate through the positive terminal, then passes through the conductor connecting block, the chip on the right metal plate and the right metal plate, the conductor cushion block and reaches the inner metal plate, and finally bypasses an area containing the chip arranged on the left metal plate and the conductor connecting block to the negative terminal on the inner metal plate.
7. The power module of claim 3, wherein:
the upper substrate and the lower substrate are stacked to form a current loop which sequentially passes through the left metal plate, the chip on the left metal plate, the conductor cushion block to the conductor connecting block, the right metal plate, the chip on the right metal plate, the conductor cushion block and the inner metal plate from the positive terminal, and finally bypasses an area containing the chip arranged on the left metal plate and the conductor connecting block to the negative terminal on the inner metal plate.
8. The utility model provides a two-sided radiating power module which characterized in that:
the insulation board comprises an upper substrate and a lower substrate, wherein the upper substrate and the lower substrate respectively comprise an outer metal plate and an insulation plate;
the upper substrate is connected with an inner metal plate on one side of the insulating plate, which is far away from the outer metal plate, and one end of the inner metal plate is connected with a negative terminal;
the lower substrate is connected with a left metal plate and a right metal plate which are oppositely arranged on one side of the insulating plate, which is far away from the outer metal plate;
a gap is formed between the left metal plate and the right metal plate, and two ends of the left metal plate and the right metal plate, which are deviated from the two ends, are respectively connected with a positive terminal and an output terminal;
the upper substrate and the lower substrate are arranged in a laminated mode, so that the positive electrode terminal is opposite to the negative electrode terminal;
the left metal plate and the right metal plate are respectively provided with a plurality of chips, and each chip on the right metal plate is respectively connected with the inner metal plate through a conductor cushion block;
a conductor connecting block is arranged on one side, close to the left metal plate, of the right metal plate, and one end, far away from the right metal plate, of the conductor connecting block extends to be connected with the inner metal plate;
one end of the conductor connecting block, which is far away from the right metal plate, is connected with the conductor cushion blocks connected to the chips on the left metal plate.
9. The power module of claim 8, wherein:
the conductor pads on the chips on the left metal plate are connected with each other to form a whole.
10. The power module of claim 8, wherein:
the upper substrate and the lower substrate are stacked to form a current loop which sequentially passes through the left metal plate, the chip on the left metal plate, the conductor cushion block to the conductor connecting block, the right metal plate, the chip on the right metal plate, the conductor cushion block, the inner metal plate and the negative terminal from the positive terminal.
CN202222432025.1U 2022-09-14 2022-09-14 Double-sided radiating power module Active CN218101251U (en)

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