CN215815842U - 可提高模块安装可靠性的双面冷却功率模块 - Google Patents

可提高模块安装可靠性的双面冷却功率模块 Download PDF

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CN215815842U
CN215815842U CN202121398826.XU CN202121398826U CN215815842U CN 215815842 U CN215815842 U CN 215815842U CN 202121398826 U CN202121398826 U CN 202121398826U CN 215815842 U CN215815842 U CN 215815842U
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substrate
power module
soldering
conductive
copper layer
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孙静
姚礼军
言锦春
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Shanghai Daozhi Technology Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331Disposition
    • H01L2224/3318Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181On opposite sides of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

本实用新型公开了一种可提高模块安装可靠性的双面冷却功率模块,包括功率模块本体,所述功率模块本体主要包括相对设置的第一基板和第二基板,第一基板和第二基板的相对面上均设置有导电铜层,第一基板和第二基板互相背离的一侧均设置有背覆铜层;所述第一基板的导电铜层上通过锡焊焊接固定有若干芯片部分,芯片部分的顶部通过锡焊焊接固定有导电连接块,该导电连接块的一端与芯片部分焊接,另一端与第二基板的导电铜层通过锡焊焊接;所述芯片部分通过金属导线与第一基板或第二基板的导电铜层电性连接以实现功率模块本体的电气控制连接,第一基板的导电铜层上焊接固定有功率端子和控制端子,第一基板和第二基板之间的相对空隙通过环氧塑封体注塑。

Description

可提高模块安装可靠性的双面冷却功率模块
技术领域
本实用新型涉及半导体封装技术领域,具体涉及一种可提高模块安装可靠性的双面冷却功率模块。
背景技术
随着新能源汽车行业的不断发展预计SiC功率芯片的日渐成熟,现有的模块制作工艺方式开始无法满足未来专用于汽车领域的车用模块对结构和电路的可靠性以及集成度越来越高的要求,我们需要拥有更高的工作温度和可靠性的功率模块。
发明内容
本实用新型要解决的技术问题在于,针对现有技术的上述缺陷,提供一种可有效提高模块散热能力和功率循环能力、保证电流等级的前提下进一步提高模块集成度的可提高模块安装可靠性的双面冷却功率模块。
本实用新型的目的是通过如下技术方案来完成的,一种可提高模块安装可靠性的双面冷却功率模块,包括功率模块本体,所述功率模块本体主要包括相对设置的第一基板和第二基板,所述第一基板和第二基板的相对面上均设置有导电铜层,第一基板和第二基板互相背离的一侧均设置有背覆铜层,且所述背覆铜层的厚度大于导电铜层的厚度;所述第一基板的导电铜层上通过锡焊焊接固定有若干芯片部分,芯片部分的顶部通过锡焊焊接固定有导电连接块,该导电连接块的一端与芯片部分焊接,另一端与第二基板的导电铜层通过锡焊焊接;所述芯片部分通过金属导线与第一基板或第二基板的导电铜层电性连接以实现功率模块本体的电气控制连接,所述第一基板的导电铜层上通过锡焊焊接固定有功率端子和控制端子,第一基板和第二基板之间的相对空隙通过环氧塑封体注塑加工以实现电气隔离。
进一步地,所述第一基板和第二基板上的背覆铜层外露于环氧塑封体的外表面,且所述环氧塑封体的厚度小于两背覆铜层之间的高度差;所述环氧塑封体及两背覆铜层的外露表面经过机加工以提高安装平整度和平面度。
进一步地,所述芯片部分为IGBT或SiC芯片,芯片部分的表面电镀有金、银材料之一或其合金材料,且所述芯片部分的正反两面均可用于焊接。
进一步地,所述金属导线通过超声波方式被键合连接于芯片和第一基板的导电铜层上,所述金属导线采用纯铝、纯铜、纯金材料之一或其合金材料,金属导线的外形为线状或带状结构。
进一步地,所述导电连接块的材质是AlSiC、AlC、Cu或Cu-Mo,导电连接块的表面镀有镍、金、银材料之一或其合金材料;所述功率端子和控制端子在成品切筋前为完整的引线框架,表面电镀有金、银材料之一或其合金材料;所述锡焊焊接采用的焊接材料为SnPb,SnAg, SnAgCu,PbSnAg含Sn焊接材料之一,焊接温度在100°到400°之间。
本实用新型的有益技术效果在于:本实用新型通过对完成回流和注塑的背面覆厚铜层基板双面冷却功率模块进行机加工,提高模块表面平整度和平面度,从而提高模块在客户端安装可靠性、可有效推进模块大量量产、提高模块在客户端适配度,在保证电流等级的前提下进一步缩减了模块体积、提高了模块集成度。
附图说明
图1为本实用新型的整体结构示意图;
图2为本实用新型所述功率模块本体的局部结构示意图;
图3为本实用新型的电路示意图;
图4为本实用新型机加工的部分示意图。
具体实施方式
为使本领域的普通技术人员更加清楚地理解本实用新型的目的、技术方案和优点,以下结合附图和实施例对本实用新型做进一步的阐述。
在本实用新型的描述中,需要理解的是,“上”、“下”、“左”、“右”、“内”、“外”、“横向”、“竖向”等术语所指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本实用新型,而不是指示或暗示所指的装置或原件必须具有特定的方位,因此不能理解为对本实用新型的限制。
如图1-4所示,本实用新型所述的一种可提高模块安装可靠性的双面冷却功率模块,包括功率模块本体,所述功率模块本体主要包括相对设置的第一基板1和第二基板2,所述第一基板1和第二基板2的相对面上均设置有导电铜层3,第一基板1和第二基板2互相背离的一侧均设置有背覆铜层4,且所述背覆铜层4的厚度大于导电铜层3的厚度;背覆铜层4的厚度根据产品需要给定具体尺寸,导电铜层3为常规尺寸铜层,导电铜层3表面可用于焊接或铝线键合。第一基板1和第二基板2的中间为绝缘层,主要材料为氧化铝、氮化硅等绝缘材料。在完成注塑后通过机加工。常规的生产流程只经过回流和注塑过程后,模块正、反两面平面度和平整度很难满足客户安装要求,本实用新型通过对完成注塑后的模块的正反两面进行机加工,优化了双面基板结构的双面冷却功率模块平整度和平面度,从而解决了双面基板结构的双面冷却功率模块的安装尺寸误差大问题。
所述第一基板1的导电铜层3上通过锡焊焊接固定有若干芯片部分5,芯片部分5的顶部通过锡焊焊接固定有导电连接块6,该导电连接块6的一端与芯片部分5焊接,另一端与第二基板2的导电铜层3通过锡焊焊接;所述芯片部分5通过金属导线7与第一基板1或第二基板2的导电铜层3电性连接以实现功率模块本体的电气控制连接,所述第一基板1的导电铜层3上通过锡焊焊接固定有功率端子8和控制端子9,第一基板1和第二基板2之间的相对空隙通过环氧塑封体10注塑加工以实现电气隔离。
参照图1-2所示,所述第一基板1和第二基板2上的背覆铜层4外露于环氧塑封体10的外表面,且所述环氧塑封体10的厚度小于两背覆铜层4之间的高度差;所述环氧塑封体10及两背覆铜层4的外露表面经过机加工以提高安装平整度和平面度。
参照图1所示,所述芯片部分5为IGBT或SiC芯片,芯片部分5的表面电镀有金、银材料之一或其合金材料,且所述芯片部分5的正反两面均可用于焊接。所述金属导线7通过超声波方式被键合连接于芯片和第一基板1的导电铜层3上,所述金属导线7采用纯铝、纯铜、纯金材料之一或其合金材料,金属导线7的外形为线状或带状结构。所述导电连接块6的材质是AlSiC、AlC、Cu或Cu-Mo,导电连接块6的表面镀有镍、金、银材料之一或其合金材料;所述功率端子8和控制端子9在成品切筋前为完整的引线框架,表面电镀有金、银材料之一或其合金材料;所述锡焊焊接采用的焊接材料为SnPb,SnAg, SnAgCu,PbSnAg含Sn焊接材料之一,焊接温度在100°到400°之间。
本实用新型通过对完成回流和注塑的背面覆厚铜层基板双面冷却功率模块进行机加工,提高模块表面平整度和平面度,从而提高模块在客户端安装可靠性、可有效推进模块大量量产、提高模块在客户端适配度,在保证电流等级的前提下进一步缩减了模块体积、提高了模块集成度。
本文中所描述的具体实施例仅例示性说明本实用新型的原理及其功效,而非用于限制本实用新型。任何熟悉此技术的人士皆可在不违背本实用新型的精神及范畴下,对上述实施例进行修饰或改变。因此,但凡所属技术领域中具有通常知识者在未脱离本实用新型所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本实用新型的权利要求所涵盖。

Claims (5)

1.可提高模块安装可靠性的双面冷却功率模块,包括功率模块本体,其特征在于:所述功率模块本体主要包括相对设置的第一基板和第二基板,所述第一基板和第二基板的相对面上均设置有导电铜层,第一基板和第二基板互相背离的一侧均设置有背覆铜层,且所述背覆铜层的厚度大于导电铜层的厚度;所述第一基板的导电铜层上通过锡焊焊接固定有若干芯片部分,芯片部分的顶部通过锡焊焊接固定有导电连接块,该导电连接块的一端与芯片部分焊接,另一端与第二基板的导电铜层通过锡焊焊接;所述芯片部分通过金属导线与第一基板或第二基板的导电铜层电性连接以实现功率模块本体的电气控制连接,所述第一基板的导电铜层上通过锡焊焊接固定有功率端子和控制端子,第一基板和第二基板之间的相对空隙通过环氧塑封体注塑加工以实现电气隔离。
2.根据权利要求1所述的可提高模块安装可靠性的双面冷却功率模块,其特征在于:所述第一基板和第二基板上的背覆铜层外露于环氧塑封体的外表面,且所述环氧塑封体的厚度小于两背覆铜层之间的高度差;所述环氧塑封体及两背覆铜层的外露表面经过机加工以提高安装平整度和平面度。
3.根据权利要求2所述的可提高模块安装可靠性的双面冷却功率模块,其特征在于:所述芯片部分为IGBT或SiC芯片,芯片部分的表面电镀有金、银材料之一或其合金材料,且所述芯片部分的正反两面均可用于焊接。
4.根据权利要求2或3所述的可提高模块安装可靠性的双面冷却功率模块,其特征在于:所述金属导线通过超声波方式被键合连接于芯片和第一基板的导电铜层上,所述金属导线采用纯铝、纯铜、纯金材料之一或其合金材料,金属导线的外形为线状或带状结构。
5.根据权利要求4所述的可提高模块安装可靠性的双面冷却功率模块,其特征在于:所述导电连接块的材质是AlSiC、AlC、Cu或Cu-Mo,导电连接块的表面镀有镍、金、银材料之一或其合金材料;所述功率端子和控制端子在成品切筋前为完整的引线框架,表面电镀有金、银材料之一或其合金材料;所述锡焊焊接采用的焊接材料为SnPb,SnAg, SnAgCu,PbSnAg含Sn焊接材料之一。
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CN115985855A (zh) * 2023-01-19 2023-04-18 海信家电集团股份有限公司 功率模块和功率模块的制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115985855A (zh) * 2023-01-19 2023-04-18 海信家电集团股份有限公司 功率模块和功率模块的制备方法
CN115985855B (zh) * 2023-01-19 2023-11-17 海信家电集团股份有限公司 功率模块和功率模块的制备方法

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