CN215771137U - Rectifier module with low forward voltage drop and high heat capacity - Google Patents

Abstract

The utility model provides a rectifier module with low forward voltage drop and high heat capacity, which aims at the problem that the anti-surge current capability of a diode chip of the rectifier module in the prior art can be further improved, and belongs to the technical field of semiconductor rectification. The utility model discloses an improve the anti surge current's of diode chip ability, further improved the life of diode chip in heavy current application.

Description

Rectifier module with low forward voltage drop and high heat capacity

Technical Field

The utility model belongs to the technical field of semiconductor rectification, and particularly relates to a rectification module with low forward voltage drop and high heat capacity.

Background

The rectifier module is of a rectifier structure formed by the diode chip, and in the application field of large current passing through the rectifier module, for example, when a vehicle is started or shut down, large surge current is generated, and the heat capacity under the diode chip is improved, so that the anti-surge current capability of the diode chip is facilitated.

Disclosure of Invention

The utility model provides a rectifier module with low forward voltage drop and high heat capacity, aiming at the problem that the anti-surge current capability of a diode chip of the rectifier module in the prior art can be further improved.

The utility model aims to be realized by the following technical scheme: a rectification module with low forward voltage drop and high heat capacity comprises an aluminum-based copper-clad plate consisting of an aluminum plate, an insulating layer and a copper-clad layer, wherein the copper-clad layer comprises three first copper-clad layers leading in an alternating current positive electrode, one second copper-clad layer leading out a direct current positive electrode and one third copper-clad layer leading out a direct current negative electrode; the three first copper-clad layers are arranged in a line, each first copper-clad layer is provided with a diode chip, and the third copper-clad layer is provided with three diode chips arranged in a line; the diode chips on the three first copper-clad layers are electrically connected with the second copper-clad layer through copper connecting bridges respectively, the leftmost diode chip on the third copper-clad layer is electrically connected with the leftmost first copper-clad layer through the copper connecting bridges, the middle diode chip on the third copper-clad layer is electrically connected with the middle first copper-clad layer through the copper connecting bridges, and the rightmost diode chip on the third copper-clad layer is electrically connected with the rightmost first copper-clad layer through the copper connecting bridges; welding tables are arranged between the first copper-clad layer and the diode chip and between the third copper-clad layer and the diode chip, the thickness of each welding table is larger than that of the copper-clad layer, and the surface area of each welding table is larger than that of the diode chip; and the first copper-clad layer, the second copper-clad layer and the third copper-clad layer are all provided with electrode plates connected with the outside.

In the scheme, the aluminum-based copper-clad plate has high heat conductivity coefficient and can radiate heat more efficiently, and the aluminum-based copper-clad plate is directly used as the mounting base plate, so that materials are saved, and more importantly, the aluminum-based copper-clad plate is more beneficial to leading out heat on the diode chip to radiate the ambient air. Diode chip and cover and be equipped with thickness between the copper layer and be greater than the welding bench that covers the copper layer, the welding bench that contacts with the diode chip can provide sufficient electric current for the diode chip and flow through the passageway when making electric current flow through the diode chip, the equivalent resistance of welding bench is little, thereby when electric current flows through the diode chip, the voltage drop at diode chip both ends diminishes, and the welding bench can also act as a big heat-absorbing element and use, can absorb the diode chip as far as because of the heat that the electric current flows through the production, then go out through the heat dissipation of aluminium base copper-clad plate, the thermal capacity of rectifier module has been improved. The anti-surge current capability of the diode chip is improved in the rectifier modules with the same volume, and the service life of the diode chip in the field of high-current application is further prolonged.

Preferably, the diode chips on the three first copper clad layers are arranged in a line, and the diode chips on the three first copper clad layers which are arranged in a line and the diode chips on the third copper clad layers which are arranged in a line are parallel to each other; the diode chips on the leftmost first copper-clad layer and the leftmost diode chips on the third copper-clad layer are arranged in a line, the diode chips on the middle first copper-clad layer and the diode chips in the middle on the third copper-clad layer are arranged in a line, and the diode chips on the rightmost first copper-clad layer and the diode chips on the rightmost third copper-clad layer are arranged in a line.

Preferably, the second copper-clad layer and the third copper-clad layer have the same structure, the second copper-clad layer and the third copper-clad layer both comprise a main structure layer and a tentacle layer perpendicular to the main structure layer, the main structure layer of the second copper-clad layer and the main structure layer of the third copper-clad layer are arranged in parallel, the tentacle layer of the second copper-clad layer and the tentacle layer of the third copper-clad layer are arranged in opposite directions, the second copper-clad layer and the third copper-clad layer surround to form an internal space, and the three first copper-clad layers are located in the internal space; the distance from the main structure layer of the second copper-clad layer to the first copper-clad layer is equal to the distance from the main structure layer of the third copper-clad layer to the first copper-clad layer. The distance from the main structure layer of the second copper-coated layer to the first copper-coated layer and the distance from the main structure of the third copper-coated layer to the first copper-coated layer are equal, the copper connecting bridge with one length can complete connection, the distance between the chip and the copper-coated layer needing copper connecting bridge connection is short, the length of the copper connecting bridge is reduced, the equivalent resistance of the copper connecting bridge is reduced, and therefore the heat productivity is reduced.

Preferably, the copper connecting bridge is formed by bending a copper sheet and comprises a connecting sheet, the left end and the right end of the connecting sheet are fixedly connected with a first welding sheet and a second welding sheet respectively, the first welding sheet is fixedly connected with a diode chip, the second welding sheet is fixedly connected with a copper-clad layer, a heat dissipation positioning hole formed by communicating four arc-shaped through holes is formed in the first welding sheet, the four through holes are mutually and uniformly distributed in a circle of the heat dissipation positioning hole by 90 degrees, and a through groove which extends to the second welding sheet through the connecting sheet is formed in the through hole close to the connecting sheet. The arrangement of the heat dissipation positioning holes is not easy to shift when the copper connecting bridge and the diode chip are welded. The arrangement of the through grooves enables the heat dissipation space of the copper connecting bridge to be more, and the heat dissipation can be faster.

Preferably, the first copper-clad layer and the third copper-clad layer are respectively provided with a positioning groove for positioning welding of the welding table, the left side and the right side of each welding table are respectively provided with a positioning groove, and the positioning grooves on the left side and the right side of each welding table are symmetrically arranged relative to the center line of the welding table. The placing and positioning of the diode chip are facilitated.

Preferably, all diode chips are oriented in the same direction.

Compared with the prior art, the utility model has the following beneficial effects: the voltage drop at the two ends of the diode chip is reduced, and the specific heat capacity of the rectifier module is increased, so that the anti-surge current capacity of the diode chip is improved, and the service life of the diode chip in the large-current application field is further prolonged.

Drawings

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is a top view of the present invention;

FIG. 3 is a schematic structural view of the copper bridge 9;

FIG. 4 is a schematic structural diagram of an aluminum-based copper-clad plate;

fig. 5 is a schematic circuit diagram of the present invention.

The labels in the figure are: 1. an aluminum plate; 2. an insulating layer; 3. a first copper clad layer, 4, a second copper clad layer; 5. a third copper-clad layer; 6. a diode chip; 7. a welding table; 8. an electrode sheet; 9. copper bridges; 10. a first welding sheet; 11. a second weld tab; 12. connecting sheets; 13. a through hole; 14. a through groove; 15. a positioning groove; 16. a main body structure layer; 17. a tentacle layer.

Detailed Description

The utility model will be further described with reference to examples of embodiments shown in the drawings to which:

example 1

As shown in fig. 1 to 5, a rectifier module with low forward voltage drop and high heat capacity comprises an aluminum-based copper clad plate consisting of an aluminum plate 1, an insulating layer 2 and copper clad layers, wherein the copper clad layers comprise three first copper clad layers 3 leading in an alternating current positive electrode, one second copper clad layer 4 leading out a direct current positive electrode and one third copper clad layer 5 leading out a direct current negative electrode; the second copper-clad layer 4 and the third copper-clad layer 5 have the same structure, the second copper-clad layer 4 and the third copper-clad layer 5 both comprise a main structure layer 16 and a tentacle layer 17 perpendicular to the main structure layer 16, the main structure layer 16 of the second copper-clad layer 4 and the main structure layer 16 of the third copper-clad layer 5 are arranged in parallel, the tentacle layer 17 of the second copper-clad layer 4 and the tentacle layer 17 of the third copper-clad layer 5 are arranged oppositely, the second copper-clad layer 4 and the third copper-clad layer 5 surround to form an internal space, and the three first copper-clad layers 3 are positioned in the internal space; the distance from the main structure layer 16 of the second copper-clad layer 4 to the first copper-clad layer 3 is equal to the distance from the main structure of the third copper-clad layer 5 to the first copper-clad layer 3. The three first copper-clad layers 3 are arranged in a line, each first copper-clad layer 3 is provided with a diode chip 6, and the third copper-clad layer 5 is provided with three diode chips arranged in a line; the cathodes of all the diode chips 6 face the soldering station 7. The diode chips 6 on the three first copper-clad layers 3 are arranged in a line, and the diode chips 6 on the three first copper-clad layers 3 and the diode chips 6 on the third copper-clad layers 5 which are arranged in a line are mutually parallel; the diode chip 6 on the leftmost first copper-clad layer 3 and the leftmost diode chip 6 on the third copper-clad layer 5 are aligned in a line, the diode chip 6 on the middle first copper-clad layer 3 and the middle diode chip 6 on the third copper-clad layer 5 are aligned in a line, and the diode chip 6 on the rightmost first copper-clad layer 3 and the rightmost diode chip 6 on the third copper-clad layer 5 are aligned in a line. The diode chips 6 on the three first copper-clad layers 3 are respectively electrically connected with the second copper-clad layers 4 through copper connecting bridges 9, the leftmost diode chip 6 on the third copper-clad layer 5 is electrically connected with the leftmost first copper-clad layer 3 through the copper connecting bridge 9, the middle diode chip 6 on the third copper-clad layer 5 is electrically connected with the middle first copper-clad layer 3 through the copper connecting bridge 9, and the rightmost diode chip 6 on the third copper-clad layer 5 is electrically connected with the rightmost first copper-clad layer 3 through the copper connecting bridge 9; copper bridge 9 is bent for the copper sheet and forms, including connection piece 12, both ends are the first welding piece 10 of fixedly connected with and second welding piece 11 respectively about connection piece 12, first welding piece 10 and diode chip 6 fixed connection, second welding piece 11 with cover copper layer fixed connection, be equipped with the heat dissipation locating hole that comprises four arc through-holes 13 intercommunication on the first welding piece 10, these four through-holes 13 become 90 degrees evenly distributed each other at the round of heat dissipation locating hole, be provided with logical groove 14 that extends to second welding piece 11 always through connection piece 12 on being close to connection piece 12's the through-hole 13. The arrangement of the heat dissipation positioning holes is not easy to shift when the copper connecting bridge 9 and the diode chip 6 are welded. The arrangement of the through grooves 14 increases the heat dissipation space of the copper connecting bridge 9, and the heat can be dissipated more quickly. Welding tables 7 are arranged between the first copper-clad layer 3 and the diode chip 6 and between the third copper-clad layer 5 and the diode chip 6, the thickness of each welding table 7 is larger than that of the copper-clad layer, and the surface area of each welding table 7 is larger than that of the diode chip 6; diode chip 6 and copper clad layer between be equipped with thickness and be greater than the welding bench 7 of covering the copper layer, welding bench 7 with the contact of diode chip 6 can provide sufficient current flow through the passageway for diode chip 6 when making current flow through diode chip 6, welding bench 7's equivalent resistance is little, when current flows through diode chip 6, the voltage drop at diode chip 6 both ends diminishes, and welding bench 7 can also act as a big heat-absorbing element and use, can absorb diode chip 6 as far as because of the heat that the current flow through and produce, then go out through the heat dissipation of aluminium base copper-clad plate, the thermal capacity of rectifier module has been improved. The anti-surge current capability of the diode chip 6 is improved in the rectifier modules with the same volume, and the service life of the diode chip 6 in the large-current application field is further prolonged. First cover copper layer 3, the third and all be equipped with positioning groove 15 that welding bench 7 fixed-position welding used on covering copper layer 5, the left and right sides of every welding bench 7 all is equipped with positioning groove 15, and positioning groove 15 of the welding bench 7 left and right sides sets up for welding bench 7 central line symmetry. The placement and positioning of the diode chip 6 are facilitated. And the first copper-clad layer 3, the second copper-clad layer 4 and the third copper-clad layer are all provided with electrode plates 8 connected with the outside.

The specific embodiments described herein are merely illustrative of the spirit of the utility model. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the utility model as defined in the appended claims.

Claims (6)

1. The rectification module with low forward voltage drop and high heat capacity is characterized by comprising an aluminum-based copper-clad plate consisting of an aluminum plate (1), an insulating layer (2) and a copper-clad layer, wherein the copper-clad layer comprises three first copper-clad layers (3) leading in an alternating current positive electrode, one second copper-clad layer (4) leading out a direct current positive electrode and one third copper-clad layer (5) leading out a direct current negative electrode; the three first copper-clad layers (3) are arranged in a line, each first copper-clad layer (3) is provided with a diode chip (6), and the third copper-clad layer (5) is provided with three diode chips which are arranged in a line; the diode chips (6) on the three first copper-clad layers (3) are electrically connected with the second copper-clad layer (4) through copper connecting bridges (9) respectively, the leftmost diode chip (6) on the third copper-clad layer is electrically connected with the leftmost first copper-clad layer (3) through the copper connecting bridge (9), the middle diode chip (6) on the third copper-clad layer is electrically connected with the middle first copper-clad layer (3) through the copper connecting bridge (9), and the rightmost diode chip (6) on the third copper-clad layer is electrically connected with the rightmost first copper-clad layer (3) through the copper connecting bridge (9); welding tables (7) are arranged between the first copper-clad layer (3) and the diode chip (6) and between the third copper-clad layer (5) and the diode chip (6), the thickness of each welding table (7) is larger than that of the copper-clad layer, and the surface area of each welding table (7) is larger than that of the diode chip (6); and the first copper-clad layer (3), the second copper-clad layer (4) and the third copper-clad layer are all provided with electrode plates (8) connected with the outside.

2. A low forward voltage drop high heat capacity rectifier module according to claim 1, characterized in that the diode chips (6) on the three first copper clad layers (3) are aligned, the aligned diode chips (6) on the three first copper clad layers (3) and the aligned diode chips (6) on the third copper clad layer (5) are parallel to each other; the diode chips (6) on the leftmost first copper-clad layer (3) and the leftmost diode chips (6) on the third copper-clad layer (5) are arranged in a line, the diode chips (6) on the middle first copper-clad layer (3) and the diode chips (6) in the middle on the third copper-clad layer (5) are arranged in a line, and the diode chips (6) on the rightmost first copper-clad layer (3) and the rightmost diode chips (6) on the third copper-clad layer (5) are arranged in a line.

3. The rectifier module with low forward voltage drop and high heat capacity as claimed in claim 1, wherein the second copper-clad layer (4) and the third copper-clad layer (5) have the same structure, the second copper-clad layer (4) and the third copper-clad layer (5) both comprise a main structure layer (16) and a handle layer (17) perpendicular to the main structure layer (16), the main structure layer (16) of the second copper-clad layer (4) and the main structure layer (16) of the third copper-clad layer (5) are arranged in parallel, the handle layer (17) of the second copper-clad layer (4) and the handle layer (17) of the third copper-clad layer (5) are arranged in opposite directions, the second copper-clad layer (4) and the third copper-clad layer (5) surround to form an inner space, and the three first copper-clad layers (3) are located in the inner space; the distance from the main structure layer (16) of the second copper-clad layer (4) to the first copper-clad layer (3) is equal to the distance from the main structure of the third copper-clad layer (5) to the first copper-clad layer (3).

4. The rectifier module with low forward voltage drop and high heat capacity as claimed in claim 1, wherein the copper connecting bridge (9) is formed by bending a copper sheet and comprises a connecting sheet (12), the left end and the right end of the connecting sheet (12) are fixedly connected with a first welding sheet (10) and a second welding sheet (11) respectively, the first welding sheets (10) and (11) are fixedly connected with the diode chip (6), the second welding sheet (11) is fixedly connected with a copper-clad layer, a heat dissipation positioning hole formed by communicating four arc-shaped through holes (13) is formed in the first welding sheet (10), the four through holes (13) are uniformly distributed in a circle of the heat dissipation positioning hole at an angle of 90 degrees, and a through groove (14) extending to the second welding sheet (11) through the connecting sheet (12) is formed in the through hole (13) close to the connecting sheet (12).

5. The rectifier module with low forward voltage drop and high heat capacity as claimed in claim 1, wherein the first copper-clad layer (3) and the third copper-clad layer (5) are respectively provided with a positioning groove (15) for positioning welding of the welding table (7), the left side and the right side of each welding table (7) are respectively provided with a positioning groove (15), and the positioning grooves (15) on the left side and the right side of the welding table (7) are symmetrically arranged relative to the center line of the welding table (7).

6. A low-drop-forward high-heat-capacity rectifier module according to claim 1, characterized in that all the diode chips (6) are oriented in the same direction.

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