CN215299226U

CN215299226U - High heat dissipation metal-packaged photosensitive diode

Info

Publication number: CN215299226U
Application number: CN202121666527.XU
Authority: CN
Inventors: 史家兵; 赵春梅; 胡连修
Original assignee: Siyang Mingxin Electronic Co ltd
Current assignee: Siyang Mingxin Electronic Co ltd
Priority date: 2021-07-22
Filing date: 2021-07-22
Publication date: 2021-12-24
Anticipated expiration: 2031-07-22

Abstract

The utility model discloses a high heat dissipation metal package photodiode, including the bottom plate, be equipped with the shell on the bottom plate, the shell top is equipped with the top cap, and the top cap below is equipped with photosensitive chip, and photosensitive chip one side is equipped with anodal pin, and the opposite side is equipped with the negative pole pin, and photosensitive chip below is equipped with a plurality of heat conduction strips, and photosensitive chip passes through heat conduction strip, anodal pin, negative pole pin to be connected with the bottom plate, and the bottom plate below is equipped with a plurality of fin, the utility model discloses a have higher stability, heat dissipation function and anti vibration nature.

Description

High heat dissipation metal-packaged photosensitive diode

Technical Field

The utility model relates to a photodiode field specifically is a high heat dissipation metal package photodiode.

Background

The photosensitive diode is also called as a photodiode, the photosensitive diode and a semiconductor diode are similar in structure, a tube core of the photosensitive diode is a PN junction with photosensitive characteristics and has unidirectional conductivity, so that reverse voltage is required to be applied during working, little saturated reverse leakage current, namely dark current, exists when no light is irradiated, the photosensitive diode is cut off, when the photosensitive diode is irradiated by light, the saturated reverse leakage current is greatly increased to form photocurrent which changes along with the change of incident light intensity, when the PN junction is irradiated by light, electrons can be generated in the PN junction to increase the density of minority carriers, and the carriers drift under the reverse voltage to increase the reverse current; most of the existing photosensitive diodes are transparent plastic shells so as to enable PN junctions to be illuminated conveniently, but the plastic shells are poor in high temperature resistance and vibration resistance, and when the plastic shells are affected by continuous high temperature and vibration, the diodes can be damaged, and the shells are broken or even chips in the shells are affected.

SUMMERY OF THE UTILITY MODEL

Technical problem to be solved

The to-be-solved technical problem of the utility model is: the influence and damage to the photodiode caused by high temperature and vibration when the photodiode works.

(II) technical scheme

In order to solve the above problem, the utility model provides a following technical scheme:

the utility model provides a high heat dissipation metal package photodiode, includes the bottom plate, be equipped with the shell on the bottom plate, the shell top is equipped with the top cap, the top cap below is equipped with photosensitive chip, photosensitive chip one side is equipped with anodal pin, and the opposite side is equipped with the negative pole pin, photosensitive chip below is equipped with a plurality of heat conduction strips, photosensitive chip pass through heat conduction strip with the bottom plate is connected, the bottom plate below is equipped with a plurality of fin.

Furthermore, the bottom plate, the shell and the top cover form a sealed cavity, the shell is of a hollow cylindrical metal structure, and the top cover is of a hemispherical structure and is made of a transparent insulating material.

Furthermore, the photosensitive chip is parallel to the bottom plate, the heat conducting strip, the anode pin and the cathode pin are supported and placed in the sealed cavity, and one surface, close to the top cover, of the photosensitive chip is a PN junction.

Further, the heat conducting strip is made of high heat conducting materials, one end of the heat conducting strip is embedded in the bottom plate, one end of the anode pin and one end of the cathode pin are connected with the photosensitive chip, and the other end of the anode pin and the cathode pin penetrate through the bottom plate and extend to the outside of the sealed cavity.

Furthermore, the bottom plate and the radiating fins are made of high heat dissipation materials, and the combination of the bottom plate and the radiating fins increases the heat dissipation area.

(III) advantageous effects

The utility model has the advantages that:

the utility model discloses have stronger guard action and stability, when photodiode expansion during operation, produced heat can in time propagate the bottom plate through the heat conduction strip on, is equipped with the fin on the bottom plate, and the bottom plate makes photodiode be in the best operating temperature throughout with the dual heat dissipation of fin and can not lead to the chip overheated and receive the influence because of the high temperature, the utility model discloses the shell adopts metal material, compares in traditional plastic casing, and metal material has a higher vibration resistance, and diamagnetism can the better chip of protection photodiode not receive the harm.

Drawings

Fig. 1 is a perspective view of the present invention;

fig. 2 is a cross-sectional view of the present invention;

fig. 3 is another cross-sectional view of the present invention;

the labels in the figure are: 1-bottom plate, 2-shell, 3-top cover, 4-photosensitive chip, 5-positive electrode pin, 6-negative electrode pin, 7-heat conducting strip, 8-heat radiating fin, 11-sealing cavity and 41-PN junction.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

In the description of the present invention, it is to be understood that the terms "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention.

Referring to fig. 1-3, a high heat dissipation metal-packaged photodiode includes a bottom plate 1, a housing 2 is disposed on the bottom plate 1, a top cover 3 is disposed on a top end of the housing 2, a photosensitive chip 4 is disposed below the top cover 3, the photosensitive chip 4 is therefore provided with a positive pin 4, a negative pin 6 is disposed on the other side of the photosensitive chip 4, a plurality of heat conduction strips 7 are disposed below the photosensitive chip 4, the photosensitive chip 4 is connected to the bottom plate 1 through the heat conduction strips 7, and a plurality of heat dissipation fins 8 are disposed below the bottom plate 1.

Further, a sealed cavity 11 is formed by the base plate 1, the shell 2 and the top cover 3, the shell 2 is of a hollow cylindrical metal structure, the top cover 3 is of a hemispherical structure and is made of a transparent insulating material, light can penetrate through the top cover 3 to irradiate the sealed cavity 11 by the transparent material of the top cover 3, compared with a traditional plastic shell, the shell 2 made of the metal material has higher vibration resistance, diamagnetism and high temperature resistance, and can better protect the photosensitive chip 4 therein, the photosensitive chip 4 is parallel to the base plate 1, and is supported and placed in the sealed cavity by the heat conducting strip 7, the positive electrode pin 5 and the negative electrode pin 6, one surface of the photosensitive chip 4 close to the top cover 3 is a PN junction 41, when the light penetrates through the top cover 3 PN to irradiate the junction 41, the photosensitive diode with photosensitive characteristic starts to work, the PN junction 41 generates heat in the working process, and the heat is not easy to radiate in the sealed cavity 11, the heat conducting strip 7 is used for conducting away heat generated by the PN junction 41, the heat conducting strip 7 is made of high heat conducting materials, once the PN junction generates heat, the heat can be transmitted preferentially along the heat conducting strip 7, one end of the heat conducting strip 7 is embedded in the bottom plate 1, the heat is transmitted to the bottom plate 1, the side, far away from the sealed cavity 11, of the bottom plate 1 is provided with the radiating fin 8, the bottom plate 1 and the radiating fin 8 are made of high heat radiating materials, the combination of the bottom plate 1 and the radiating fin 8 increases the heat radiating area, the generated heat is radiated, the heat radiating efficiency is greatly improved, the positive electrode pin 5 and one end of the negative electrode pin 6 are connected with the photosensitive chip 4, and the other end of the positive electrode pin penetrates through the bottom plate 1 and extends to the outside of the sealed cavity 11.

It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.

Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.

Claims

1. A high heat dissipation metal-encapsulated photodiode characterized in that: including bottom plate (1), be equipped with shell (2) on bottom plate (1), shell (2) top is equipped with top cap (3), top cap (3) below is equipped with photosensitive chip (4), photosensitive chip (4) one side is equipped with anodal pin (5), and the opposite side is equipped with negative pole pin (6), photosensitive chip (4) below is equipped with a plurality of heat conduction strip (7), and photosensitive chip (4) pass through heat conduction strip (7) with bottom plate (1) is connected, bottom plate (1) below is equipped with a plurality of fin (8).

2. The high heat dissipation metal-encapsulated photodiode of claim 1, wherein: the bottom plate (1), shell (2) with top cap (3) form a sealed chamber (11), shell (2) are hollow circular cylinder shape metal structure, top cap (3) are hemisphere type structure, and adopt transparent insulating material to make.

3. The high heat dissipation metal-encapsulated photodiode of claim 1, wherein: photosensitive chip (4) with bottom plate (1) is parallel, photosensitive chip (4) by heat conduction strip (7) anodal pin (5) with negative pole pin (6) support place in sealed chamber, photosensitive chip (4) are close to top cap (3) one side is PN junction (41).

4. The high heat dissipation metal-encapsulated photodiode of claim 3, wherein: the heat conducting strip (7) is made of high heat conducting materials, one end of the heat conducting strip (7) is embedded in the bottom plate (1), one end of the anode pin (5) and one end of the cathode pin (6) are connected with the photosensitive chip (4), and the other end of the heat conducting strip penetrates through the bottom plate (1) and extends to the outside of the sealed cavity (11).

5. The high heat dissipation metal-encapsulated photodiode of claim 1, wherein: the bottom plate (1) and the radiating fins (8) are both made of high heat dissipation materials.