CN215289038U

CN215289038U - LPCVD polycrystalline furnace process hearth

Info

Publication number: CN215289038U
Application number: CN202120846073.8U
Authority: CN
Inventors: 宋立禄; 张海林; 刘国霞; 滕玉朋; 吴季浩
Original assignee: Qingdao Sunred Electronic Technology Co ltd
Current assignee: Sairuida Intelligent Electronic Equipment Wuxi Co ltd
Priority date: 2021-04-23
Filing date: 2021-04-23
Publication date: 2021-12-24
Anticipated expiration: 2031-04-23

Abstract

The utility model discloses a LPCVD polycrystalline furnace process furnace, which comprises a frame, wherein the frame is used for supporting a heater and a pipe orifice flange, a process pipe is fixedly arranged on the pipe orifice flange, a crystal boat which can be slidably placed in the process pipe is used for bearing a wafer which needs to be processed, and a detachable deposition plate is arranged at the top of the inner wall of the process pipe; the deposition drops in the top area of the wafer, the left and right sides of the top area are respectively provided with the slide way plates, the top arc area between the slide way plates is provided with the detachable deposition plate which can be drawn and inserted, and the deposition plate can be periodically drawn out for cleaning or replacement, so that the replacement time of the process tube can be effectively prolonged, the effective working time of a machine table is not wasted, and the productivity is obviously increased and the workload of an operator is effectively reduced.

Description

LPCVD polycrystalline furnace process hearth

Technical Field

The utility model relates to a photovoltaic field equipment especially relates to a LPCVD polycrystal furnace technology furnace.

Background

Conventional LPCVD photovoltaic field equipment, there is SIH4 process gas in the technology, gas volatilizes in the technology pipe in the course of technology and carries out the growth of technology film to the wafer, also there are deposit and crystallization at the technology intraductal surface simultaneously, after the process of several heats, the sedimentary deposit of technology intraductal surface also can become thick gradually, because it is different with the expansion coefficient of technology pipe for different materials, drop by oneself after becoming thick, lamella and dust after the dropout promptly drop on the wafer of the intraductal wafer boat, be a serious pollution to the quality of wafer, want to solve this problem and need not drop under the condition of crystalline layer yet, just frequently dismantle the technology pipe, work such as washing, so with very big loss effective operating time, waste productivity and increase operator's work load.

SUMMERY OF THE UTILITY MODEL

In order to overcome the defects of the prior art, the utility model provides a LPCVD polycrystalline furnace process furnace, very big extension process heat, as long as can dismantle the deposit board according to adsorbing the serious condition with process tube inner wall top and take out from furnace gate one side, wash or reserve an arc type sheet metal replacement that can dismantle the deposit board and use, can be with fine solution this problem, need not change process furnace and furnace

In order to solve the technical problem, the utility model provides a following technical scheme: a process hearth of an LPCVD (low pressure chemical vapor deposition) polycrystalline furnace comprises a rack, wherein the rack is used for supporting a heater and a pipe orifice flange, a process pipe is fixedly installed on the pipe orifice flange, a crystal boat which can be placed in the process pipe in a sliding mode is used for bearing wafers needing to be processed, and a detachable deposition plate is installed on the top of the inner wall of the process pipe.

As an optimized technical scheme of the utility model, the chute board is installed to technology pipe inner wall top both sides for support and direction the deposit board.

As an optimized technical scheme of the utility model, the vertical projection area of deposit board covers the place region of wafer boat.

As a preferred technical scheme of the utility model, the length of deposit board is greater than the length of heater, the length of heater is greater than the length of boat.

As a preferred technical scheme of the utility model, the deposit board with the technology pipe with the wafer boat contactless.

As an optimized technical proposal of the utility model, the deposition plate is a stainless steel plate.

As an optimal technical scheme of the utility model, the heater both ends with the soft shutoff of heat dissipation is equipped with to the sealing ring between the technology pipe for block the clearance heat dissipation between heater and the technology pipe.

Compared with the prior art, the utility model discloses the beneficial effect that can reach is:

the adsorption and falling are carried out in the top area of the wafer, the left and the right sides of the top area are respectively provided with a slide way plate, the top arc area between the slide way plates is provided with a detachable deposition plate which can be drawn and inserted, and the deposition plate can be drawn out and cleaned or replaced at regular intervals. The crystal layer is thickened in the area except the top of the process tube, but the crystal layer cannot fall onto the wafer, the influence on the wafer is avoided, if the crystal layer falls, the crystal layer falls onto the bottom of the process tube, and the crystal layer can be wiped out by other objects such as a long brush after the wafer is taken out of the furnace. The replacement and cleaning of the process pipe are needed only when the area outside the top of the inner wall of the process pipe is particularly serious, so that the replacement time of the process pipe can be effectively prolonged, the effective working time of a machine table is not wasted, the productivity is obviously increased, and the workload of an operator is reduced most effectively.

Drawings

FIG. 1 is a schematic view of the overall structure of a process furnace chamber of an LPCVD polycrystalline furnace according to the present invention;

FIG. 2 is a schematic side sectional view of a furnace chamber of the LPCVD polycrystalline furnace according to the present invention;

FIG. 3 is an enlarged view of the structure at A;

FIG. 4 is an enlarged view of the structure at B;

FIG. 5 is an enlarged view of the structure at C;

wherein: 1. a frame; 2. a heater; 3. a pipe orifice flange; 4. a process tube; 5. a wafer boat; 6. depositing a plate; 7. a slide plate; 8. and (6) heat dissipation soft plugging.

Detailed Description

In order to make the technical means, the creation features, the achievement purposes and the functions of the invention easy to understand, the invention is further explained below with reference to the specific embodiments, but the following embodiments are only the preferred embodiments of the invention, not all. Based on the embodiments in the implementation, other embodiments obtained by those skilled in the art without any creative work belong to the protection scope of the present invention.

Referring to fig. 1 to 4, the utility model provides a LPCVD polycrystal furnace process furnace chamber, including frame 1, frame 1 is used for supporting heater 2 and mouth of pipe flange 3, mouth of pipe flange 3 is equipped with process tube 4 admittedly, the inside wafer boat 5 that can slide and place of process tube 4 for bear the weight of the wafer that needs to carry out the technology, detachable deposit plate 6 is installed at the inner wall top of process tube 4. The material of the deposition plate 6 is preferably stainless steel, the stainless steel can resist corrosion and high temperature, the cost is low, more importantly, the process tube is made of the stainless steel, and therefore the same material is adopted, and the replacement period of the deposition plate 6 can be judged more easily from the experience that the process tube period needs to be replaced before.

The deposition plate arranged above is detachable, and the process tube is not required to be replaced after being periodically pulled out for cleaning or replacement.

Referring to fig. 3, the two sides of the top of the inner wall of the process tube 4 are provided with a chute plate 7 for supporting and guiding the deposition plate 6; the guide function of the slide way plate 7 is provided, so that the deposition plate 6 can be replaced more conveniently.

Referring to fig. 4, in order to prevent the sheet and dust on the top of the process tube 4 from falling onto the wafers carried by the wafer boat 5, it is necessary to satisfy: the vertical projection area of the deposition plate 6 covers the area of the boat 5, which shows a preferred embodiment, and the deposition plate 6 is curved, but other shapes can be selected, such as a flat plate, and the corresponding chute plate 7 also needs to be deformed appropriately.

Referring to fig. 1, the length of the deposition plate 6 is greater than that of the heater 2, and the length of the heater 2 is greater than that of the boat 5. The length of the deposition plate 6 is greater than that of the heater 2, so that the shielding area of the deposition plate is wider; the length of the heater 2 is greater than that of the boat 5, so that the wafers to be heated for the process can be better heated.

Referring to fig. 5, a heat dissipation soft plug 8 is installed between the two ends of the heater 2 and the process tube 4 for blocking the heat dissipation of the gap between the heater and the process tube, so as to better ensure the temperature constancy in the process of wafer processing.

In the present disclosure, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact between the first and second features, or may comprise contact between the first and second features not directly. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.

The foregoing shows and describes the general principles, essential features, and advantages of the invention. It should be understood by those skilled in the art that the present invention is not limited by the above embodiments, and the description in the above embodiments and the description is only preferred examples of the present invention, and is not intended to limit the present invention, and that the present invention can have various changes and modifications without departing from the spirit and scope of the present invention, and these changes and modifications all fall into the scope of the claimed invention. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims

1. The LPCVD polycrystalline furnace process hearth comprises a rack (1), wherein the rack (1) is used for supporting a heater (2) and a pipe orifice flange (3), a process pipe (4) is fixedly arranged on the pipe orifice flange (3), a crystal boat (5) which can be placed in the process pipe (4) in a sliding mode is used for bearing wafers which need to be processed, and the LPCVD polycrystalline furnace process hearth is characterized in that a detachable deposition plate (6) is installed at the top of the inner wall of the process pipe (4).

2. The LPCVD polycrystalline furnace process hearth according to claim 1, characterized in that: and two sides of the top of the inner wall of the process tube (4) are provided with a slide way plate (7) for supporting and guiding the deposition plate (6).

3. The LPCVD polycrystalline furnace process hearth according to claim 2, characterized in that: the vertical projection area of the deposition plate (6) covers the area of the wafer boat (5).

4. The LPCVD polycrystalline furnace process hearth of claim 3, wherein: the length of the deposition plate (6) is greater than that of the heater (2), and the length of the heater (2) is greater than that of the crystal boat (5).

5. The LPCVD polycrystalline furnace process hearth according to claim 1, characterized in that: the deposition plate (6) is not in contact with the process tube (4) and the wafer boat (5).

6. The LPCVD polycrystalline furnace process hearth according to any of claims 1-4, characterized in that: the deposition plate (6) is a stainless steel plate.

7. The LPCVD polycrystalline furnace process hearth according to claim 1, characterized in that: and heat dissipation soft plugs (8) are arranged between the two ends of the heater (2) and the process pipe (4) in a sealing mode and used for blocking heat dissipation of a gap between the heater (2) and the process pipe (4).