CN112981527A - LPCVD polycrystalline furnace process hearth - Google Patents
LPCVD polycrystalline furnace process hearth Download PDFInfo
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- CN112981527A CN112981527A CN202110441521.0A CN202110441521A CN112981527A CN 112981527 A CN112981527 A CN 112981527A CN 202110441521 A CN202110441521 A CN 202110441521A CN 112981527 A CN112981527 A CN 112981527A
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- Prior art keywords
- heater
- deposition plate
- polycrystalline furnace
- plate
- process tube
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000004518 low pressure chemical vapour deposition Methods 0.000 title claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 31
- 230000008021 deposition Effects 0.000 claims abstract description 30
- 235000012431 wafers Nutrition 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims description 7
- 230000017525 heat dissipation Effects 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 241000446313 Lamella Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
本发明公开了一种LPCVD多晶炉工艺炉膛，包括机架，所述机架用于支撑加热器和管口法兰，所述管口法兰固装有工艺管，所述工艺管内部可滑动放置的晶舟，用于承载需进行工艺的晶片，所述工艺管内壁顶部安装有可拆卸的沉积板；由于沉积掉落是在晶片的顶部区域，则顶部区域的左右分别设置一个滑道板，滑道板之间的顶部圆弧区域设置可抽插的可拆卸的沉积板，定期抽出清洗或更换即可，这样就可以有效延长工艺管的更换时间，不浪费机台有效的工作时间，明显的增大产能和最有效的减少操作者的工作量。
The invention discloses a process chamber of an LPCVD polycrystalline furnace, comprising a frame, the frame is used for supporting a heater and a nozzle flange, a process pipe is fixedly mounted on the nozzle flange, and the interior of the process pipe can be The wafer boat placed in sliding is used to carry the wafers to be processed, and a detachable deposition plate is installed on the top of the inner wall of the process tube; since the deposition drop is in the top area of the wafer, a slideway is provided on the left and right of the top area. The top arc area between the plate and the slide plate is provided with a removable deposition plate that can be pulled and inserted, and it can be pulled out regularly for cleaning or replacement, which can effectively prolong the replacement time of the process tube without wasting the effective working time of the machine. , significantly increase the production capacity and most effectively reduce the workload of the operator.
Description
Technical Field
The invention relates to equipment in the photovoltaic field, in particular to an LPCVD (low pressure chemical vapor deposition) polycrystalline furnace process hearth.
Background
Conventional LPCVD photovoltaic field equipment, there is SIH4 process gas in the technology, gas volatilizes in the process tube and carries out the growth of technology film to the wafer in the course of the technology, also there are deposit and crystallization at the process tube inner surface simultaneously, after the process of several heats, the sedimentary deposit of process tube inner surface also can become thick gradually, because it is different with the expansion coefficient of process tube for its material different, drop by oneself after becoming thick, lamella and dust after the dropout promptly drop on the wafer of the intraductal wafer boat, be a serious pollution to the quality of wafer, want to solve this problem and need not drop under the condition of crystalline layer yet, just frequently dismantle the process tube, work such as washing, so with very big loss effective operating time, waste productivity and increase operator's work load.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides the LPCVD polycrystalline furnace process hearth, which greatly prolongs the process heat, and can well solve the problem only by drawing out the detachable deposition plate at the top of the inner wall of the process tube from one side of a furnace door according to the serious adsorption condition and cleaning or backing up an arc-shaped thin plate of the detachable deposition plate for replacement use without replacing the process hearth
In order to solve the technical problems, the invention provides the following technical scheme: a process hearth of an LPCVD (low pressure chemical vapor deposition) polycrystalline furnace comprises a rack, wherein the rack is used for supporting a heater and a pipe orifice flange, a process pipe is fixedly installed on the pipe orifice flange, a crystal boat which can be placed in the process pipe in a sliding mode is used for bearing wafers needing to be processed, and a detachable deposition plate is installed on the top of the inner wall of the process pipe.
As a preferred technical scheme of the invention, the two sides of the top of the inner wall of the process tube are provided with the slide way plates for supporting and guiding the deposition plate.
As a preferred technical solution of the present invention, the vertical projection area of the deposition plate covers the area where the boat is located.
In a preferred embodiment of the present invention, the length of the deposition plate is greater than the length of the heater, and the length of the heater is greater than the length of the boat.
As a preferred embodiment of the present invention, the deposition plate is not in contact with the process tube and the boat.
As a preferable technical solution of the present invention, the deposition plate is a stainless steel plate.
As a preferred technical scheme of the invention, a heat dissipation soft plug is arranged between the two ends of the heater and the process tube in a sealing manner and is used for blocking heat dissipation of a gap between the heater and the process tube.
Compared with the prior art, the invention can achieve the following beneficial effects:
the adsorption and falling are carried out in the top area of the wafer, the left and the right sides of the top area are respectively provided with a slide way plate, the top arc area between the slide way plates is provided with a detachable deposition plate which can be drawn and inserted, and the deposition plate can be drawn out and cleaned or replaced at regular intervals. The crystal layer is thickened in the area except the top of the process tube, but the crystal layer cannot fall onto the wafer, the influence on the wafer is avoided, if the crystal layer falls, the crystal layer falls onto the bottom of the process tube, and the crystal layer can be wiped out by other objects such as a long brush after the wafer is taken out of the furnace. The replacement and cleaning of the process pipe are needed only when the area outside the top of the inner wall of the process pipe is particularly serious, so that the replacement time of the process pipe can be effectively prolonged, the effective working time of a machine table is not wasted, the productivity is obviously increased, and the workload of an operator is reduced most effectively.
Drawings
FIG. 1 is a schematic view of the overall structure of a process furnace chamber of an LPCVD polycrystalline furnace according to the present invention;
FIG. 2 is a schematic side sectional view of a process furnace chamber of an LPCVD polycrystalline furnace according to the present invention;
FIG. 3 is an enlarged view of the structure at A;
FIG. 4 is an enlarged view of the structure at B;
FIG. 5 is an enlarged view of the structure at C;
wherein: 1. a frame; 2. a heater; 3. a pipe orifice flange; 4. a process tube; 5. a wafer boat; 6. depositing a plate; 7. a slide plate; 8. and (6) heat dissipation soft plugging.
Detailed Description
The present invention will be further described with reference to specific embodiments for the purpose of facilitating an understanding of technical means, characteristics of creation, objectives and functions realized by the present invention, but the following embodiments are only preferred embodiments of the present invention, and are not intended to be exhaustive. Based on the embodiments in the implementation, other embodiments obtained by those skilled in the art without any creative efforts belong to the protection scope of the present invention.
Referring to fig. 1 to 4, the invention provides an LPCVD polycrystalline furnace process furnace chamber, which comprises a frame 1, wherein the frame 1 is used for supporting a heater 2 and a nozzle flange 3, a process tube 4 is fixedly mounted on the nozzle flange 3, a wafer boat 5 which can be slidably placed in the process tube 4 is used for bearing wafers to be processed, and a detachable deposition plate 6 is mounted on the top of the inner wall of the process tube 4. The material of the deposition plate 6 is preferably stainless steel, the stainless steel can resist corrosion and high temperature, the cost is low, more importantly, the process tube is made of the stainless steel, and therefore the same material is adopted, and the replacement period of the deposition plate 6 can be judged more easily from the experience that the process tube period needs to be replaced before.
The deposition plate arranged above is detachable, and the process tube is not required to be replaced after being periodically pulled out for cleaning or replacement.
Referring to fig. 3, the two sides of the top of the inner wall of the process tube 4 are provided with a chute plate 7 for supporting and guiding the deposition plate 6; the guide function of the slide way plate 7 is provided, so that the deposition plate 6 can be replaced more conveniently.
Referring to fig. 4, in order to prevent the sheet and dust on the top of the process tube 4 from falling onto the wafers carried by the wafer boat 5, it is necessary to satisfy: the vertical projection area of the deposition plate 6 covers the area of the boat 5, which shows a preferred embodiment, and the deposition plate 6 is curved, but other shapes can be selected, such as a flat plate, and the corresponding chute plate 7 also needs to be deformed appropriately.
Referring to fig. 1, the length of the deposition plate 6 is greater than that of the heater 2, and the length of the heater 2 is greater than that of the boat 5. The length of the deposition plate 6 is greater than that of the heater 2, so that the shielding area of the deposition plate is wider; the length of the heater 2 is greater than that of the boat 5, so that the wafers to be heated for the process can be better heated.
Referring to fig. 5, a heat dissipation soft plug 8 is installed between the two ends of the heater 2 and the process tube 4 for blocking the heat dissipation of the gap between the heater and the process tube, so as to better ensure the temperature constancy in the process of wafer processing.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110441521.0A CN112981527A (en) | 2021-04-23 | 2021-04-23 | LPCVD polycrystalline furnace process hearth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110441521.0A CN112981527A (en) | 2021-04-23 | 2021-04-23 | LPCVD polycrystalline furnace process hearth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112981527A true CN112981527A (en) | 2021-06-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110441521.0A Pending CN112981527A (en) | 2021-04-23 | 2021-04-23 | LPCVD polycrystalline furnace process hearth |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112981527A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980055054A (en) * | 1996-12-27 | 1998-09-25 | 김광호 | Boat Support Device of Semiconductor Equipment |
| KR19990041720A (en) * | 1997-11-24 | 1999-06-15 | 구본준 | Semiconductor Low Pressure Chemical Vapor Deposition Equipment |
| KR20040009385A (en) * | 2002-07-23 | 2004-01-31 | 삼성전자주식회사 | Vertical furnace for processing semiconductor wafer |
| KR20060013876A (en) * | 2004-08-09 | 2006-02-14 | 삼성전자주식회사 | Thin film deposition apparatus |
| JP2009059844A (en) * | 2007-08-31 | 2009-03-19 | Shin Etsu Handotai Co Ltd | Heat treatment furnace |
| JP2010150605A (en) * | 2008-12-25 | 2010-07-08 | Sharp Corp | Mocvd system and film deposition system using the same |
| KR101354600B1 (en) * | 2012-07-24 | 2014-01-23 | 엘지디스플레이 주식회사 | Improved boat, and heat treatment chamber and apparatus of substrate having the same |
| US20140230722A1 (en) * | 2011-08-05 | 2014-08-21 | Showa Denko K.K. | Epitaxial wafer manufacturing device and manufacturing method |
| US20160214864A1 (en) * | 2013-09-23 | 2016-07-28 | Wacker Chemie Ag | Process for producing polycrystalline silicon |
| CN215289038U (en) * | 2021-04-23 | 2021-12-24 | 青岛赛瑞达电子科技有限公司 | LPCVD polycrystalline furnace process hearth |
-
2021
- 2021-04-23 CN CN202110441521.0A patent/CN112981527A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980055054A (en) * | 1996-12-27 | 1998-09-25 | 김광호 | Boat Support Device of Semiconductor Equipment |
| KR19990041720A (en) * | 1997-11-24 | 1999-06-15 | 구본준 | Semiconductor Low Pressure Chemical Vapor Deposition Equipment |
| KR20040009385A (en) * | 2002-07-23 | 2004-01-31 | 삼성전자주식회사 | Vertical furnace for processing semiconductor wafer |
| KR20060013876A (en) * | 2004-08-09 | 2006-02-14 | 삼성전자주식회사 | Thin film deposition apparatus |
| JP2009059844A (en) * | 2007-08-31 | 2009-03-19 | Shin Etsu Handotai Co Ltd | Heat treatment furnace |
| JP2010150605A (en) * | 2008-12-25 | 2010-07-08 | Sharp Corp | Mocvd system and film deposition system using the same |
| US20140230722A1 (en) * | 2011-08-05 | 2014-08-21 | Showa Denko K.K. | Epitaxial wafer manufacturing device and manufacturing method |
| KR101354600B1 (en) * | 2012-07-24 | 2014-01-23 | 엘지디스플레이 주식회사 | Improved boat, and heat treatment chamber and apparatus of substrate having the same |
| US20160214864A1 (en) * | 2013-09-23 | 2016-07-28 | Wacker Chemie Ag | Process for producing polycrystalline silicon |
| CN215289038U (en) * | 2021-04-23 | 2021-12-24 | 青岛赛瑞达电子科技有限公司 | LPCVD polycrystalline furnace process hearth |
Non-Patent Citations (2)
| Title |
|---|
| 李云奇: "《真空镀膜技术与设备》", vol. 1989, 31 October 1989, 东北工学院出版社, pages: 192 - 193 * |
| 苑伟政等: "《微机电系统》", vol. 2021, 30 June 2021, 西北工业大学出版社, pages: 165 - 166 * |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20220307 Address after: 214000 workshop and office space on the south side of the first floor of Plant No. 4, precision machinery industrial park, Xishan District, Wuxi City, Jiangsu Province Applicant after: Sairuida intelligent electronic equipment (Wuxi) Co.,Ltd. Address before: 826 Huadong Road, high tech Zone, Qingdao, Shandong Applicant before: QINGDAO SUNRED ELECTRONIC TECHNOLOGY Co.,Ltd. |
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Address after: 214000 workshop and office space on the south side of the first floor of Plant No. 4, precision machinery industrial park, Xishan District, Wuxi City, Jiangsu Province Applicant after: Sairuida Intelligent Electronic Equipment (Wuxi) Co.,Ltd. Address before: 214000 workshop and office space on the south side of the first floor of Plant No. 4, precision machinery industrial park, Xishan District, Wuxi City, Jiangsu Province Applicant before: Sairuida intelligent electronic equipment (Wuxi) Co.,Ltd. |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20210618 |