KR19990041720A - Semiconductor Low Pressure Chemical Vapor Deposition Equipment - Google Patents
Semiconductor Low Pressure Chemical Vapor Deposition Equipment Download PDFInfo
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- KR19990041720A KR19990041720A KR1019970062369A KR19970062369A KR19990041720A KR 19990041720 A KR19990041720 A KR 19990041720A KR 1019970062369 A KR1019970062369 A KR 1019970062369A KR 19970062369 A KR19970062369 A KR 19970062369A KR 19990041720 A KR19990041720 A KR 19990041720A
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- vapor deposition
- chemical vapor
- low pressure
- pressure chemical
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
본 발명은 반도체 저압화학기상증착장치에 관한 것으로, 종래에는 웨이퍼에 자연산화막이 형성되는 것을 차단하기 위하여 로드록 챔버를 필수적으로 설치함으로서, 설치비용 및 유지비용이 많이 소요되는 문제점이 있었다. 본 발명 반도체 저압화학기상증착장치는 공정챔버어셈블리(23)를 승강가능하도록 설치하여, 종래에 필수적으로 설치되던 로드록 챔버를 배제함으로서, 설치비용 및 유지비용이 절감되는 효과가 있고, 또한 공정챔버어셈블리와 로드록 챔버의 압력차로 웨이퍼에 이물질이 발생되는 것이 방지되는 효과가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor low pressure chemical vapor deposition apparatus. In the related art, a load lock chamber is essentially provided in order to block a natural oxide film from being formed on a wafer, thereby requiring a large installation and maintenance cost. The semiconductor low pressure chemical vapor deposition apparatus of the present invention is installed so that the process chamber assembly 23 can be elevated, thereby eliminating the load lock chamber which is essentially installed in the prior art, thereby reducing the installation cost and the maintenance cost, and also the process chamber. The pressure difference between the assembly and the load lock chamber prevents foreign matter from being generated on the wafer.
Description
본 발명은 반도체 저압화학기상증착장치에 관한 것으로, 특히 로드록 실을 배제하여, 그로인한 설치비용 및 관리비용을 절감할 수 있도록 하는데 적합한 반도체 저압화학기상증착장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor low pressure chemical vapor deposition apparatus, and more particularly, to a semiconductor low pressure chemical vapor deposition apparatus suitable for excluding load lock seals, thereby reducing installation and management costs.
일반적으로 저압화학기상증착장치(LPCVD)에서는 자연산화막의 성장억제를 위하여 로드록 챔버가 설치되어 있으며, 이와 같은 저압화학기상증착장치가 도 1a와 도 1b에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.In general, in a low pressure chemical vapor deposition apparatus (LPCVD), a load lock chamber is installed to suppress growth of a natural oxide film. Such a low pressure chemical vapor deposition apparatus is illustrated in FIGS. 1A and 1B. Same as
도시된 바와 같이, 종래 반도체 저압화학기상증착장치는 라이너 튜브(1)의 외측에 히터(2)가 설치되어 있고, 상기 라이너 튜브(1)의 내측에는 아웃 튜브(3)와 인너튜브(4) 및 그 하측에 설치되는 게이트 밸브(5)로 구성되는 공정챔버어셈블리(6)가 설치되어 있다.As shown, the conventional semiconductor low pressure chemical vapor deposition apparatus is provided with a heater (2) on the outside of the liner tube (1), the outer tube (3) and the inner tube (4) inside the liner tube (1) And a process chamber assembly 6 constituted by a gate valve 5 provided below.
그리고, 상기 공정챔버어셈블리(6)의 하단부 일측에는 가스주입관(7)이 설치되어 있고, 타측에는 배기라인(8)이 설치되어 있으며, 그 배기라인(8) 상에는 제 1펌프(9), 제 2펌프(10), 스크러버(11)가 설치되어 있다.In addition, a gas injection pipe 7 is provided at one side of the lower end of the process chamber assembly 6, and an exhaust line 8 is provided at the other side thereof, and a first pump 9, on the exhaust line 8. The second pump 10 and the scrubber 11 are provided.
또한, 상기 공정챔버어셈블리(6)의 하측에는 로드록 챔버(12)가 연결설치되어 있고, 그 로드록 챔버(12)의 일측에는 로드록 게이트(13)가 설치되어 있으며, 내측에는 웨이퍼(14)를 탑재하기 위한 보트(15)가 설치되어 있고, 상기 로드록 챔버(12)와 상기 제 2펌프(10)는 펌핑라인(16)으로 연결되어 있다.In addition, a load lock chamber 12 is connected to a lower side of the process chamber assembly 6, a load lock gate 13 is provided at one side of the load lock chamber 12, and a wafer 14 is provided inside. The boat 15 for mounting a) is installed, and the load lock chamber 12 and the second pump 10 are connected by a pumping line 16.
상기와 같이 구성되어 있는 종래 반도체 저압화학기상증착장치는 보트(15)에 웨이퍼(14)를 탑재하고, 제 2펌프(10)를 동작시켜서 로드록 챔버(12)의 내측을 진공상태로 만든 다음, 로드록 챔버(12)와 공정챔버어셈블리(6)의 내측 압력이 동일하게 유지되면 게이트 밸브(5)를 열고 보트(15)를 인너 튜브(4)의 내측으로 로딩시킨다.In the conventional semiconductor low pressure chemical vapor deposition apparatus configured as described above, the wafer 14 is mounted on the boat 15, the second pump 10 is operated to make the inside of the load lock chamber 12 in a vacuum state. When the internal pressures of the load lock chamber 12 and the process chamber assembly 6 remain the same, the gate valve 5 is opened and the boat 15 is loaded into the inner tube 4.
그런 다음, 게이트 밸브(5)를 닫고, 가스주입관(7)으로 공정가스를 주입하며 증착작업을 진행하게 되며, 작업을 마친 다음에도 로드록 챔버(12)와 공정챔버어셈블리(6)의 내측 압력을 동일하게 유지시킨 다음, 보트(15)를 언로딩하게 되며, 로드록 챔버(12)로 보트(15)가 언로딩되면 로드록 챔버(12)의 내측을 대기압 상태로 맞춘 다음, 로드록 게이트(13)를 열고 보트(15)를 꺼내어 다음공정으로 이동하게 된다.Then, the gate valve 5 is closed, the process gas is injected into the gas injection pipe 7, and the deposition process is performed. After completion of the operation, the inside of the load lock chamber 12 and the process chamber assembly 6 is completed. The pressure is kept the same, and then the boat 15 is unloaded. When the boat 15 is unloaded into the load lock chamber 12, the inside of the load lock chamber 12 is brought into atmospheric pressure, and then the load lock is loaded. The gate 13 is opened and the boat 15 is taken out and moved to the next process.
그러나, 상기와 같이 구성되어 있는 종래 반도체 저압화학기상증착장치는 보트(15)의 로딩/언로딩시 공정챔버어셈블리(6)와 로드록 챔버(12)를 동일압력으로 유지하는 것이 까다롭기 때문에, 압력차가 발생되어 인너 튜브(4)의 내벽이나 보트(15)에서 이물질이 떨어져서 웨이퍼(14)를 오염시키는 문제점이 있었다. 그리고, 로드록 챔버(12)의 설치비용 및 유지비용에 따른 원가상승의 원인이 되는 문제점이 있었다.However, in the conventional semiconductor low pressure chemical vapor deposition apparatus configured as described above, it is difficult to keep the process chamber assembly 6 and the load lock chamber 12 at the same pressure during loading / unloading of the boat 15. As a result of the difference, foreign matters fall off the inner wall of the inner tube 4 or the boat 15, thereby contaminating the wafer 14. Then, there was a problem that causes the cost increase according to the installation cost and the maintenance cost of the load lock chamber 12.
본 발명의 주목적은 상기와 같은 여러 문제점을 갖지 않는 반도체 저압화학기상증착장치를 제공함에 있다.An object of the present invention is to provide a semiconductor low pressure chemical vapor deposition apparatus that does not have the various problems as described above.
본 발명의 다른 목적은 웨이퍼의 오염에 따른 불량발생을 방지하도록 하는데 적합한 반도체 저압화학기상증착장치를 제공함에 있다.Another object of the present invention is to provide a semiconductor low pressure chemical vapor deposition apparatus suitable for preventing defects caused by contamination of a wafer.
본 발명의 또 다른 목적은 로드록 챔버의 설치를 배제하여 설치비용 및 유지비용을 절감할 수 있도록 하는데 적합한 반도체 저압화학기상증착장치를 제공함에 있다.It is still another object of the present invention to provide a semiconductor low pressure chemical vapor deposition apparatus suitable for excluding installation of a load lock chamber to reduce installation and maintenance costs.
도 1a는 종래 반도체 저압화학기상증착장치의 웨이퍼 로딩상태를 보인 종단면도.Figure 1a is a longitudinal sectional view showing a wafer loading state of a conventional semiconductor low pressure chemical vapor deposition apparatus.
도 1b는 종래 반도체 저압화학기상증착장치의 보트 로딩상태를 보인 종단면도.Figure 1b is a longitudinal cross-sectional view showing a boat loading state of a conventional semiconductor low pressure chemical vapor deposition apparatus.
도 2a는 본 발명 반도체 저압화학기상증착장치의 웨이퍼 로딩상태를 보인 종단면도.Figure 2a is a longitudinal cross-sectional view showing a wafer loading state of the semiconductor low pressure chemical vapor deposition apparatus of the present invention.
도 2b는 본 발명 반도체 저압화학기상증착장치의 공정챔버어셈블리 하강상태를 보인 종단면도.Figure 2b is a longitudinal cross-sectional view showing a process chamber assembly lowered state of the semiconductor low pressure chemical vapor deposition apparatus of the present invention.
도 2c는 본 발명 반도체 저압화학기상증착장치의 공정챔버어셈블리 상승상태를 보인 종단면도.Figure 2c is a longitudinal cross-sectional view showing a process chamber assembly raised state of the semiconductor low pressure chemical vapor deposition apparatus of the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of Symbols for Main Parts of Drawings>
21 : 라이너 튜브 22 : 히터21: liner tube 22: heater
23 : 공정챔버어셈블리 24 : 웨이퍼23: process chamber assembly 24: wafer
25 : 보트 26 : 가스주입관25 boat 26 gas injection pipe
27 : 배기라인 28 : 펌프27: exhaust line 28: pump
29 : 스크러버 31 : 내측튜브29: scrubber 31: inner tube
32 : 외측튜브 33 : 게이트 밸브32: outer tube 33: gate valve
상기와 같은 본 발명의 목적을 달성하기 위하여 라이터 튜브의 외측에 히터가 설치되어 있고, 상기 라이너 튜브의 내측에는 승강가능하도록 공정챔버어셈블리가 설치되어 있으며, 그 공정챔버어셈블리의 하측에는 웨이퍼를 탑재한 보트가 설치되어 있고, 상기 공정챔버어셈블리의 하단부 일측에는 가스주입관이 설치되어 있으며, 타측에는 배기라인이 설치되어 있고, 그 배기라인 상에는 펌프및 스크러버가 설치되어서 구성되는 것을 특징으로 하는 반도체 저압화학기상증착장치가 제공된다.In order to achieve the object of the present invention as described above, a heater is provided on the outside of the lighter tube, and a process chamber assembly is installed inside the liner tube so as to be liftable, and a wafer is mounted below the process chamber assembly. A boat is installed, a gas injection pipe is installed at one end of the lower end of the process chamber assembly, an exhaust line is installed at the other side, and a pump and a scrubber are installed on the exhaust line. A vapor deposition apparatus is provided.
상기 공정챔버어셈블리는 내,외측튜브와, 그 내,외측튜브의 하측에 설치되는 게이트 밸브로 구성되는 것을 특징으로 하는 반도체 저압화학기상증착장치가 제공된다.The process chamber assembly is provided with a semiconductor low pressure chemical vapor deposition apparatus comprising an inner, an outer tube, and a gate valve installed below the inner and outer tubes.
이하, 상기와 같이 구성되는 본 발명 반도체 저압화학기상증착장치의 실시예를 첨부된 도 2a 내지 도 2c를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the semiconductor low pressure chemical vapor deposition apparatus of the present invention configured as described above will be described in more detail with reference to FIGS. 2A to 2C.
도시된 바와 같이, 본 발명 반도체 저압화학기상증착장치는 라이너 튜브(21)의 외측에 히터(22)가 설치되어 있고 상기 라이너 튜브(21)의 내측에는 승강가능하도록 공정챔버어셈블리(23)가 설치되어 있으며, 그 공정챔버어셈블리(23)의 하측에는 웨이퍼(24)를 탑재한 보트(25)가 설치되어 있고, 상기 공정챔버어셈블리(23)의 하단부 일측에는 가스주입관(26)이 설치되어 있으며, 타측에는 배기라인(27)이 설치되어 있고, 그 배기라인(27)상에는 펌프(28) 및 스크러버(29)가 설치되어서 구성된다.As illustrated, the semiconductor low pressure chemical vapor deposition apparatus of the present invention has a heater 22 installed outside the liner tube 21 and a process chamber assembly 23 installed inside the liner tube 21 so as to be elevated. A boat 25 having a wafer 24 is provided below the process chamber assembly 23, and a gas injection pipe 26 is provided at one side of the lower end of the process chamber assembly 23. On the other side, an exhaust line 27 is provided, and on the exhaust line 27, a pump 28 and a scrubber 29 are provided.
상기 공정챔버어셈블리(23)는 쿼츠로된 내,외측튜브(31)(32)와, 그 내,외측튜브(31)(32)의 하측에 설치되는 게이트 밸브(33)로 구성되어 있다.The process chamber assembly 23 is composed of inner and outer tubes 31 and 32 made of quartz and a gate valve 33 provided below the inner and outer tubes 31 and 32.
상기와 같이 구성되는 본 발명 반도체 저압화학기상증착장치의 동작을 설명하면 다음과 같다.Referring to the operation of the semiconductor low pressure chemical vapor deposition apparatus of the present invention configured as described above are as follows.
먼저, 도 2a에 도시된 바와 같이, 공정챔버어셈블리(23)의 내부를 대기압상태로 만든 다음, 증착작업을 하고자 하는 웨이퍼(24)를 보트(25)에 탑재한다.First, as shown in FIG. 2A, the inside of the process chamber assembly 23 is made at atmospheric pressure, and then the wafer 24 to be deposited is mounted on the boat 25.
그런 다음, 도 2b에 도시된 바와 같이, 공정챔버어셈블리(23)의 하측에 설치되는 게이트 밸브(33)를 열고, 공정챔버어셈블리(23)를 하강시켜서 보트(25)가 내측튜브(31)의 내측에 위치되도록 한 다음, 게이트 밸브(33)를 닫고, 펌프(28)를 동작시켜 서 공정챔버어셈블리(23)의 내측을 진공상태로 만든다.Then, as shown in FIG. 2B, the gate valve 33 installed under the process chamber assembly 23 is opened, and the process chamber assembly 23 is lowered to allow the boat 25 to be mounted on the inner tube 31. The inner side of the process chamber assembly 23 is brought into a vacuum state after the gate valve 33 is closed, and the pump 28 is operated.
그런 다음, 도 2c에 도시된 바와 같이, 공정챔버어셈블리(23)의 내측에 보트(25)가 위치된 상태로 상승시켜서 라이너 튜브(21)의 내측에 공정챔버어셈블리(23)가 위치되면 가스주입관(26)으로 공정가스를 주입하며 증착작업을 실시한다.Then, as shown in FIG. 2C, when the process chamber assembly 23 is positioned inside the liner tube 21 by raising the boat 25 inside the process chamber assembly 23, the gas injection is performed. Process gas is injected into the tube 26 and deposition is performed.
상기와 같이 일정시간동안 증착작업을 마친 다음, 보트(25)가 내측에 설치된 공정챔버어셈블리(23)를 하강시키고, 공정챔버어셈블리(23)의 내측을 대기압상태로 만든 다음, 게이트 밸브(33)를 열고 공정챔버어셈블리(23)는 다시 라이너 튜브(21)의 내측으로 상승시키며, 보트(25)에 탑재된 웨이퍼(24)들을 언로딩하여 공정을 마치게 된다.After the deposition operation for a predetermined time as described above, the boat 25 is lowered the process chamber assembly 23 is installed on the inside, the inside of the process chamber assembly 23 to the atmospheric pressure state, and then the gate valve 33 The process chamber assembly 23 is opened again to the inside of the liner tube 21, and the process is completed by unloading the wafers 24 mounted on the boat 25.
이상에서 상세히 설명한 바와 같이, 본 발명 반도체 저압화학기상증착장치는 공정챔버어셈블리를 승강가능하도록 설치하여, 종래의 필수적으로 설치되던 로드록 챔버를 배제함으로서, 설치비용 및 유지비용이 절감되는 효과가 있고, 또한 공정챔버어셈블리와 로드록 챔버의 압력차로 웨이퍼에 이물질이 발생되는 것이 방지되는 효과가 있다.As described in detail above, the semiconductor low pressure chemical vapor deposition apparatus of the present invention is installed so as to be able to lift and lower the process chamber assembly, thereby eliminating the loadlock chamber which is conventionally installed, thereby reducing the installation cost and maintenance cost. In addition, the foreign matter is prevented from occurring in the wafer due to the pressure difference between the process chamber assembly and the load lock chamber.
Claims (2)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970062369A KR100273241B1 (en) | 1997-11-24 | 1997-11-24 | Semiconductor lcvd apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970062369A KR100273241B1 (en) | 1997-11-24 | 1997-11-24 | Semiconductor lcvd apparatus |
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| Publication Number | Publication Date |
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| KR19990041720A true KR19990041720A (en) | 1999-06-15 |
| KR100273241B1 KR100273241B1 (en) | 2001-01-15 |
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| KR1019970062369A KR100273241B1 (en) | 1997-11-24 | 1997-11-24 | Semiconductor lcvd apparatus |
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| CN112981527A (en) * | 2021-04-23 | 2021-06-18 | 青岛赛瑞达电子科技有限公司 | LPCVD polycrystalline furnace process hearth |
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| JP2766804B2 (en) * | 1987-09-29 | 1998-06-18 | 東京エレクトロン株式会社 | Heat treatment equipment |
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| CN112981527A (en) * | 2021-04-23 | 2021-06-18 | 青岛赛瑞达电子科技有限公司 | LPCVD polycrystalline furnace process hearth |
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