CN214626797U - Power supply voltage lifting circuit - Google Patents
Power supply voltage lifting circuit Download PDFInfo
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- CN214626797U CN214626797U CN202022877851.8U CN202022877851U CN214626797U CN 214626797 U CN214626797 U CN 214626797U CN 202022877851 U CN202022877851 U CN 202022877851U CN 214626797 U CN214626797 U CN 214626797U
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- triode
- power supply
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- supply voltage
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Abstract
The utility model discloses a power supply voltage lifting circuit, which is characterized by comprising a power supply management chip and a triode; and the collector electrode of the triode and the emitter electrode of the triode are directly connected with the ground, and the base electrode of the triode is connected with the power management chip. The utility model uses the triode to replace the diode, and uses a PN junction of the triode to compensate the temperature drift, thus effectively improving the stability of the output voltage of the power supply; the triode is used for replacing a diode, so that leakage current is effectively reduced during voltage rise, the voltage rise reliability is effectively improved, and the output power of a power supply is also effectively improved; the power supply circuit effectively guarantees and improves the capability of resisting external static electricity, high voltage or lightning stroke and other attacks; effectively improving the quality and the competitiveness of the product.
Description
Technical Field
The utility model relates to a supply voltage technical field especially relates to a supply voltage lifting circuit.
Background
In the power supply circuit, in order to ensure the stability of the output voltage of the power supply, the voltage needs to be raised. However, as shown in fig. 1, in the power circuit in the prior art, the ground pin end at the rear end of the output of the 78L05 chip is directly grounded, and the power circuit is simple and low in cost, but cannot be damaged by external static electricity, high voltage or lightning strike, and the like, and particularly, the power circuit of RS485 communication may be touched by mains voltage of 220V through the A, B communication interface of RS485 to attack the power supply of RS485 communication and the power circuit thereof.
As shown in fig. 2 and 3, a diode or a double diode is added to the rear end of the 78L05 chip output in the power circuit, and the 78L05 ground pin is grounded by adopting a double-diode connection, because there is a diode or a double diode at the rear end of the chip output, the voltage drop of 0.7V is generated in the circuit, and therefore, the voltage needs to be raised, that is, if the voltage is not raised, the 5V output becomes 4.3V. The 78L05 ground pin is connected with two poles and then grounded, so that the output voltage is raised, and the voltage raising circuit is used for raising the voltage at the rear end, so that the effect of no voltage raising is eliminated. The power supply circuit has the capability of resisting external static electricity, high voltage or lightning stroke and other attacks, plays a role in raising output voltage, but has larger leakage current and lower reliability.
Therefore, it is necessary to improve the above technical problems.
SUMMERY OF THE UTILITY MODEL
The utility model aims at prior art's defect, provide a supply voltage lifting circuit.
In order to realize the above purpose, the utility model adopts the following technical scheme:
a power supply voltage lifting circuit comprises a power supply management chip and a triode; and the collector electrode of the triode and the emitter electrode of the triode are directly connected with the ground, and the base electrode of the triode is connected with the power management chip.
Further, the model of the power management chip is 78L05 chip.
Further, the triode is an NPN type triode.
Further, the power supply device also comprises an electrolytic capacitor EC, and the electrolytic capacitor EC is connected with the power supply management chip.
Further, the power supply management chip further comprises a capacitor C, and the capacitor C is connected with the power supply management chip.
Furthermore, the collector electrode of the triode is connected with the emitter electrode of the triode and the ground, the collector junction and the emitter junction of the triode are in a forward bias state, and the triode is in a saturation state.
Further, the LED power supply further comprises a diode, and the diode is connected with the power supply management chip.
Further, the device also comprises a transient diode, and the transient diode is connected with the diode.
Further, the LED lamp also comprises a resistor, and the resistor is connected with the diode.
Compared with the prior art, the utility model discloses following beneficial effect has:
1. the triode is used for replacing the diode, and a PN junction of the triode is used for compensating the temperature drift, so that the stability of the output voltage of the power supply is effectively improved;
2. the triode is used for replacing a diode, so that leakage current is effectively reduced during voltage rise, the voltage rise reliability is effectively improved, and the output power of a power supply is also effectively improved;
3. the power supply circuit effectively guarantees and improves the capability of resisting external static electricity, high voltage or lightning stroke and other attacks;
4. effectively improving the quality and the competitiveness of the product.
Drawings
FIG. 1 is a schematic diagram of a power circuit provided in the prior art;
fig. 2 is a schematic diagram of a power supply voltage boosting circuit provided in the prior art, in which a chip ground pin is connected to a diode ground;
FIG. 3 is a schematic diagram of a power supply voltage boosting circuit provided in the prior art, in which two diodes are connected to ground at the chip ground;
fig. 4 is a schematic diagram of a power supply voltage boost circuit according to a preferred embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
As shown in fig. 4, the power supply voltage boost circuit provided in this embodiment includes a power management chip IC1, a transistor Q10, an electrolytic capacitor EC6, and a capacitor C106; the collector C of the triode Q10 and the emitter e of the triode Q10 are directly connected with the ground GND, the base b of the triode Q10 is connected with one end of the power management chip IC1, the other end of the power management chip IC1 is connected with the electrolytic capacitor EC6 and the capacitor C106 respectively, and the electrolytic capacitor EC6 and the capacitor C106 are connected in parallel.
In the present embodiment, the power management chip IC1 has a model number of 78L05 chip; the transistor Q10 is an NPN type transistor.
The ground pin of the 78L05 chip is connected through the NPN triode and then grounded, and the effect of raising the output voltage is achieved.
The circuit directly connects the collector c and the emitter e of the triode Q10 with the ground, namely the base b) and the emitter e of the triode Q10 are conducted at the moment, the base b and the collector c are also conducted, so that two PN nodes (collector junction and emitter junction) are in a forward bias state, the whole triode is in a saturation state, and at the moment, the leakage current generated by using the triode is smaller than that generated by directly using a diode to lift and press, and the reliability is higher.
In general, leakage current of a transistor refers to a small current between CEs, and the CEs are at the same potential in a saturation state, so that basically no leakage current can be considered.
The principle of the power supply voltage raising circuit is that a triode is used as two diodes, but the triode is used for replacing the diodes, and the main reason is that a PN junction of the triode is used for compensating temperature drift, so that the voltage is more stable. The temperature drift is a phenomenon in which a change in a parameter of the semiconductor device due to a change in temperature is a main cause of a zero point drift phenomenon, and therefore, the zero point drift is also referred to as temperature drift.
It should be noted that, because the transistor and the diode are produced by different materials and processes, the leakage current generated by using the transistor is smaller than that generated by directly using the diode to raise the voltage.
In this embodiment, the power voltage boost circuit further includes a diode D20, a transient diode TVS1, a resistor R97, and an output port or an interface TP7 of the power supply, one end of the diode D20 is connected to the power management chip IC1, the other end of the diode D20 is connected to the transient diode TVS1 and the resistor R97, and the output port or the interface TP7 of the power supply is connected to the diode D20 and the transient diode TVS1, respectively.
Compared with the prior art, the utility model discloses following beneficial effect has:
1. the triode is used for replacing the diode, and a PN junction of the triode is used for compensating the temperature drift, so that the stability of the output voltage of the power supply is effectively improved;
2. the triode is used for replacing a diode, so that leakage current is effectively reduced during voltage rise, the voltage rise reliability is effectively improved, and the output power of a power supply is also effectively improved;
3. the power supply circuit effectively guarantees and improves the capability of resisting external static electricity, high voltage or lightning stroke and other attacks;
4. effectively improving the quality and the competitiveness of the product.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications, additions and substitutions for the specific embodiments described herein may be made by those skilled in the art without departing from the spirit of the invention or exceeding the scope of the invention as defined in the accompanying claims.
Claims (8)
1. A power supply voltage lifting circuit is characterized by comprising a power supply management chip and a triode; the collector electrode of the triode and the emitter electrode of the triode are directly connected with the ground, and the base electrode of the triode is connected with the power management chip;
the model of the power management chip is 78L05 chip.
2. The supply voltage boost circuit of claim 1, wherein said transistor is an NPN transistor.
3. The power supply voltage boost circuit of claim 1, further comprising an electrolytic capacitor EC, said electrolytic capacitor EC being connected to the power management chip.
4. The power supply voltage boost circuit of claim 3, further comprising a capacitor C, wherein said capacitor C is connected to the power management chip.
5. The supply voltage boost circuit of claim 1, wherein the collector of the transistor is connected to the emitter of the transistor and ground, the collector and emitter junctions of the transistor are forward biased, and the transistor is in saturation.
6. The supply voltage boost circuit of claim 1, further comprising a diode, said diode being connected to the power management chip.
7. The supply voltage boost circuit of claim 6, further comprising a transient diode, said transient diode being connected to the diode.
8. The supply voltage boost circuit of claim 6, further comprising a resistor connected to the diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022877851.8U CN214626797U (en) | 2020-12-04 | 2020-12-04 | Power supply voltage lifting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022877851.8U CN214626797U (en) | 2020-12-04 | 2020-12-04 | Power supply voltage lifting circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214626797U true CN214626797U (en) | 2021-11-05 |
Family
ID=78428850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022877851.8U Active CN214626797U (en) | 2020-12-04 | 2020-12-04 | Power supply voltage lifting circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214626797U (en) |
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2020
- 2020-12-04 CN CN202022877851.8U patent/CN214626797U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No. 1818, Xingping 1st Road, Pinghu Economic Development Zone, Jiaxing City, Zhejiang Province, 314200 Patentee after: Zhejiang Hengye Electronics Co.,Ltd. Address before: No. 1818, Xingping 1st Road, Pinghu Economic Development Zone, Jiaxing City, Zhejiang Province, 314200 Patentee before: ZHEJIANG HENGYE ELECTRONIC Co.,Ltd. |