CN210431376U - IGBT gate pole drive circuit - Google Patents
IGBT gate pole drive circuit Download PDFInfo
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- CN210431376U CN210431376U CN201921459456.9U CN201921459456U CN210431376U CN 210431376 U CN210431376 U CN 210431376U CN 201921459456 U CN201921459456 U CN 201921459456U CN 210431376 U CN210431376 U CN 210431376U
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Abstract
The utility model provides a IGBT gate pole drive circuit, the circuit includes IGBT gate pole control chip, DCDC module, power zener diode D1, power current-limiting resistor R1, zener diode D2, gate pole drive resistor R2, current-limiting resistor R3, prevents reverse diode D3, high frequency filter electric capacity C1, power filter electric capacity C2, insulated gate bipolar transistor G1, wherein: the 6 th pin of the DCDC power module is connected with the VCC2HS pin of the IGBT gate control chip, the power supply current-limiting resistor R1 and the power supply voltage-stabilizing diode D1 are connected in series between the 7 th pin of the DCDC power module and the 8 th pin of the DCDC power module, and the power supply voltage-stabilizing diode D1 and the power supply filter capacitor C2 are connected in parallel at the 7 th pin of the DCDC power module and one end of the power supply current-limiting resistor R1.
Description
Technical Field
The utility model belongs to high-pressure high-power IGBT grid drive technique relates to a high-pressure high-power IGBT grid drive's implementation method.
Background
With the development of high-power semiconductor switching devices and the increasing maturity of production processes, particularly the outgoing line of the IGBT in the 80 th of the 20 th century, the all-solid-state high-power modulator and the high-voltage switching power supply which adopt the IGBT as a switching tube are gradually realized. The IGBT is a composite power device of MOS and BJT, belonging to field control power tube, and having the characteristics of fast switching speed, high voltage withstanding, large switching power, small tube voltage drop, etc.
However, like other power electronics, IGBTs are dependent on circuit conditions and switching environments. Therefore, how to effectively drive and protect the IGBT is a difficult point and a key point of circuit design, and is a key link of the operation of the whole device. Particularly, the reliable operation of the IGBT depends greatly on the gate driving circuit thereof, so one of the important factors determining the power conversion performance of the IGBT is the gate driving circuit.
SUMMERY OF THE UTILITY MODEL
The utility model aims at: a high-voltage high-power IGBT grid drive design method is provided.
The utility model provides a IGBT gate pole drive circuit, the circuit includes IGBT gate pole control chip, DCDC module, power zener diode D1, power current-limiting resistor R1, zener diode D2, gate pole drive resistor R2, current-limiting resistor R3, prevents reverse diode D3, high frequency filter electric capacity C1, power filter electric capacity C2, insulated gate bipolar transistor G1, wherein:
the 6 th pin of the DCDC power module is connected with the VCC2HS pin of the IGBT gate control chip, a power supply current-limiting resistor R1 and a power supply voltage-stabilizing diode D1 are connected in series between the 7 th pin of the DCDC power module and the 8 th pin of the DCDC power module, and a power supply voltage-stabilizing diode D1 and a power supply filter capacitor C2 are connected in parallel at the 7 th pin of the DCDC power module and one end of a power supply current-limiting resistor R1;
the power supply pin of the IGBT gate control chip is connected with a power supply, the OUTH pin of the IGBT gate control chip is connected with one end of a gate driving resistor R2, and the other end of the gate driving resistor R2 is connected with the gate pin of G1;
the DESATHS pin of the IGBT gate control chip is connected with one end of a current-limiting resistor R3, the other end of the current-limiting resistor R3 is connected with the anode of an anti-reverse diode D3, and the cathode of the anti-reverse diode D3 is connected with the collector of G1;
the DESATHS pin of the IGBT gate control chip is connected with one end of a high-frequency filter capacitor C1, the GND2HS pin at the other end of a high-frequency filter capacitor C1 is connected, and the other end of the high-frequency filter capacitor C1 is connected with the emitting electrode of G1;
the DESATHS pin of the IGBT gate control chip is connected with the cathode of a voltage stabilizing diode D2, the anode of a voltage stabilizing diode D2 is connected with the GND2HS pin, and the anode of a voltage stabilizing diode D2 is connected with the collector of G1.
Optionally, a 10uF capacitor is connected in parallel to two ends of the power source zener diode D2.
Optionally, the power of the gate driving resistor R2 is greater than 0.5W.
Optionally, the reverse breakdown voltage of the anti-reverse diode D3 is greater than 2 times the voltage between the collector of G1 and the emitter of G1.
Optionally, the zener diode D2 has a zener voltage value of + 15V.
Optionally, the capacity of the high-frequency filter capacitor C1 is 220 uF.
Optionally, the regulated voltage value of the power supply voltage regulator diode D1 is 8.2V.
Optionally, the resistance of the power supply current limiting resistor R1 is greater than 135 Ω and less than 1.4K Ω, and the power of the power supply current limiting resistor is greater than 0.1W.
Optionally, the 6 th pin of the DCDC power supply module outputs +15V power, and the 8 th pin of the DCDC power supply module outputs-15V power.
The utility model has the advantages that: the utility model provides a high-pressure high-power IGBT grid drive design method, owing to it is simple to have circuit design, the design method is clear and definite. The upper IGBT and the lower IGBT of one bridge arm are driven simultaneously, the effect of isolating the primary side and the secondary side of the IGBT grid driving circuit can be achieved, and the effects of high driving speed and stable and reliable driving are achieved.
Drawings
Fig. 1 is a schematic diagram of a DCDC power conversion circuit provided in the present application;
fig. 2 is a circuit diagram of an IGBT gate driving circuit provided in the present application.
Detailed Description
The utility model belongs to high-pressure high-power IGBT gate drive technique relates to a high-pressure high-power IGBT gate drive's implementation method. The utility model discloses the scheme of taking does: a double-circuit IGBT grid driving chip 2ED020I12-F2 with an overcurrent protection function is adopted to realize the gate driving function of a single bridge arm upper and lower double-tube. The primary side of the chip is powered by 5V, the secondary side of the chip is powered by a double power supply, a positive power supply is powered by +15V, a negative power supply is powered by-8V, and the secondary side power supply module selects ITX2415S models in XPPower ITX series to output +/-15V power. the-8V power supply is obtained by-15V voltage stabilization. Meanwhile, a reverse diode is added to a DESATHS pin of the grid driving chip to design an overcurrent protection function for the IGBT.
A high-voltage high-power IGBT gate drive design method adopts a double-circuit IGBT drive chip 2ED020I12-F2 with an overcurrent protection function to realize a gate drive function of a single bridge arm upper and lower double tube. The primary side of the chip is powered by 5V, the secondary side of the chip is powered by a double power supply, a positive power supply is powered by +15V, a negative power supply is powered by-8V, and the secondary side power supply module selects ITX2415S models in XPPower ITX series to output +/-15V power. And obtaining a-8V power supply through-15V voltage stabilization. Meanwhile, a reverse diode is added to a DESATHS pin of the grid driving chip to design an overcurrent protection function for the IGBT. The main innovation points are as follows:
1. the core innovation point is as follows: a double-circuit IGBT driving chip 2ED020I12-F2 with an overcurrent protection function is adopted to realize the gate driving function of a single bridge arm upper and lower double-tube.
2. Secondary innovation points are as follows: and the secondary side power supply module selects ITX2415S model in the XPPower ITX series to output +/-15V power supply. And obtaining a-8V power supply through-15V voltage stabilization.
3. Secondary innovation points are as follows: the DESATH pin of the gate driving chip 2ED020I12-F2 selects a voltage stabilizing diode with the model number of 1N6004, and the voltage is stabilized at +15V, so that the chip is protected from overvoltage damage.
4. Secondary innovation points are as follows: an anti-reverse diode of a DESATH pin of the gate driving chip 2ED020I12-F2 is a surface-mounted silicon rectifier diode of 1N4007 type, and overcurrent protection is carried out on the IGBT.
Example one
The following is the utility model discloses do the detailed description, the utility model provides a high-pressure high-power IGBT grid drive design method, owing to it is simple to have circuit design, design method is clear and definite. The upper IGBT and the lower IGBT of one bridge arm are driven simultaneously, the effect of isolating the primary side and the secondary side of the IGBT grid driving circuit can be achieved, and the effects of high driving speed and stable and reliable driving are achieved. The following steps are taken:
step one, as shown in fig. 2, a double-channel IGBT gate control chip 2ED020I12-F2 with transformer isolation inside is selected, a 5V power supply is designed on the primary side of the chip for power supply, a positive power supply and a negative power supply are designed on the secondary side of the chip, the positive power supply is +15V, the negative power supply is-8V, and the positive power supply and the negative power supply are isolated from the primary side 5V power supply.
And step two, as shown in fig. 1, the secondary side Power supply module selects the XP Power isolation Power supply module ITX2415S and outputs +/-15V. The driving chip requires negative voltage of-8V to-12V, so that a voltage stabilizing tube of 8.2V is adopted for stabilizing voltage, and the model of a voltage stabilizing diode is 1N 5998. The voltage stabilizing current of the voltage stabilizing diode is 5mA, the maximum working current is 52mA, therefore, the selected current limiting resistor is larger than 135 omega and smaller than 1.4K omega, therefore, the selected current limiting resistor is 1.2K omega, the resistor power is 0.041W, and the selected resistor model is RMK3216-1/4W-1.2K omega.
Step three, the gate-on gate voltage of the IGBT module CM150RX-24S1 is 5.4V, the gate charge quantity Qg is 158nC, and the built-in gate drive resistor Rgint is 0.0 omega; assuming that the switching frequency of the IGBT is 20KHz, the positive gate opening voltage is +15V, the negative gate opening voltage is-8V, and therefore the voltage swing is 23V, the driving power is calculated as follows: p ═ f × Qg × V ═ 20khz × 158nC × 23V ═ 0.9 ═ 0.065W.
According to the recommendation of the manual, the external gate driving resistor Rg _ ext is 10 Ω, and then the peak value of the gate driving current is calculated as follows: V/(Rg _ ext + Rg _ int) 23/(10+0) 2.3A
A2 ED020I12-F2 chip is selected as a gate drive, the peak current of the drive chip is 2.4A and is larger than 2.3A, and the requirement of an IGBT module on a drive circuit is met.
Step four, selecting RMK5225-1/2W-10 omega-J-GJB 1432A-99 as the gate driving resistor, wherein the resistance value is 10 omega, and the current is effective according to the peak current of the driving gate of 2.3AHas a value of
The switching period is 100us, and the on-off is carried out for 2 times in one switching period, the heat consumption of the resistor is
The power of the resistor is selected to be 0.5W, so that the requirement of power consumption of the driving resistor is met.
Since the maximum voltage output by the DESATH pin of the gate driver chip 2ED020I12-F2 is VCC2+0.3V, the model of the Zener diode is 1N6004, which is regulated to +15V, and the chip is protected from overvoltage damage.
The current of an anti-reverse diode of a DESAT pin of the gate driving chip 2ED020I12-F2 is 15mA, the maximum voltage borne by the diode is 350V, so that a surface-mounted silicon rectifier diode of 1N4007 model is selected, the maximum reverse voltage of the diode is 1000V, the forward current is 1A, and the design requirement in a circuit is met.
Example two
Firstly, a double-channel IGBT gate control chip 2ED020I12-F2 with transformer isolation is selected, a 5V power supply is designed on the primary side of the chip for supplying power, a positive and negative double power supply, a positive power supply plus 15V and a negative power supply minus 8V are designed on the secondary side of the chip, and the positive and negative double power supply is isolated from the primary side 5V power supply.
And step two, the secondary side Power supply module selects the XP Power isolation Power supply module ITX2415S and outputs +/-15V. The driving chip requires negative voltage of-8V to-12V, so that a voltage stabilizing tube of 8.2V is adopted for stabilizing voltage, and the model of a voltage stabilizing diode is 1N 5998. The voltage stabilizing current of the voltage stabilizing diode is 5mA, the maximum working current is 52mA, therefore, the selected current limiting resistor is larger than 135 omega and smaller than 1.4K omega, therefore, the selected current limiting resistor is 1.2K omega, the resistor power is 0.041W, and the selected resistor model is RMK3216-1/4W-1.2K omega.
Step three, the gate-on gate voltage of the IGBT module CM150RX-24S1 is 5.4V, the gate charge quantity Qg is 158nC, and the built-in gate drive resistor Rgint is 0.0 omega; assuming that the switching frequency of the IGBT is 20KHz, the positive gate opening voltage is +15V, the negative gate opening voltage is-8V, and therefore the voltage swing is 23V, the driving power is calculated as follows: p ═ f × Qg × V ═ 20khz × 158nC × 23V ═ 0.9 ═ 0.065W.
According to the recommendation of the manual, the external gate driving resistor Rg _ ext is 10 Ω, and then the peak value of the gate driving current is calculated as follows: V/(Rg _ ext + Rg _ int) 23/(10+0) 2.3A
A2 ED020I12-F2 chip is selected as a gate drive, the peak current of the drive chip is 2.4A and is larger than 2.3A, and the requirement of an IGBT module on a drive circuit is met.
Step four, selecting RMK5225-1/2W-10 omega-J-GJB 1432A-99 as the gate driving resistor, wherein the resistance value is 10 omega, and the current effective value is 2.3A according to the peak current of the driving gate
The switching period is 100us, and the on-off is carried out for 2 times in one switching period, the heat consumption of the resistor is
The power of the resistor is selected to be 0.5W, so that the requirement of power consumption of the driving resistor is met.
Since the maximum voltage output by the DESATH pin of the gate driver chip 2ED020I12-F2 is VCC2+0.3V, the model of the Zener diode is 1N6004, which is regulated to +15V, and the chip is protected from overvoltage damage.
The current of an anti-reverse diode of a DESAT pin of the gate driving chip 2ED020I12-F2 is 15mA, the maximum voltage borne by the diode is 350V, so that a surface-mounted silicon rectifier diode of 1N4007 model is selected, the maximum reverse voltage of the diode is 1000V, the forward current is 1A, and the design requirement in a circuit is met.
Claims (9)
1. The IGBT gate drive circuit is characterized by comprising an IGBT gate control chip, a DCDC module, a power supply voltage stabilizing diode D1, a power supply current limiting resistor R1, a voltage stabilizing diode D2, a gate drive resistor R2, a current limiting resistor R3, an anti-reverse diode D3, a high-frequency filter capacitor C1, a power supply filter capacitor C2 and an insulated gate bipolar transistor G1, wherein:
the 6 th pin of the DCDC power module is connected with the VCC2HS pin of the IGBT gate control chip, a power supply current-limiting resistor R1 and a power supply voltage-stabilizing diode D1 are connected in series between the 7 th pin of the DCDC power module and the 8 th pin of the DCDC power module, and a power supply voltage-stabilizing diode D1 and a power supply filter capacitor C2 are connected in parallel at the 7 th pin of the DCDC power module and one end of a power supply current-limiting resistor R1;
the power supply pin of the IGBT gate control chip is connected with a power supply, the OUTH pin of the IGBT gate control chip is connected with one end of a gate driving resistor R2, and the other end of the gate driving resistor R2 is connected with the gate pin of G1;
the DESATHS pin of the IGBT gate control chip is connected with one end of a current-limiting resistor R3, the other end of the current-limiting resistor R3 is connected with the anode of an anti-reverse diode D3, and the cathode of the anti-reverse diode D3 is connected with the collector of G1;
the DESATHS pin of the IGBT gate control chip is connected with one end of a high-frequency filter capacitor C1, the GND2HS pin at the other end of a high-frequency filter capacitor C1 is connected, and the other end of the high-frequency filter capacitor C1 is connected with the emitting electrode of G1;
the DESATHS pin of the IGBT gate control chip is connected with the cathode of a voltage stabilizing diode D2, the anode of a voltage stabilizing diode D2 is connected with the GND2HS pin, and the anode of a voltage stabilizing diode D2 is connected with the collector of G1.
2. The circuit of claim 1, wherein a 10uF capacitor is connected in parallel across the supply zener diode D2.
3. The circuit of claim 1, wherein the gate drive resistor R2 has a power greater than 0.5W.
4. The circuit of claim 1, wherein the reverse breakdown voltage of the anti-reverse diode D3 is greater than 2 times the voltage between the collector of G1 and the emitter of G1.
5. The circuit of claim 1, wherein the zener diode D2 has a zener value of + 15V.
6. The circuit of claim 1, wherein the high frequency filter capacitor C1 has a capacitance of 220 uF.
7. The circuit of claim 1, wherein the supply zener diode D1 has a zener value of 8.2V.
8. The circuit of claim 1, wherein the resistance of the power limiting resistor R1 is greater than 135 Ω and less than 1.4K Ω, and the power of the power limiting resistor is greater than 0.1W.
9. The circuit of claim 1, wherein the 6 th pin of the DCDC power module outputs +15V power, and the 8 th pin of the DCDC power module outputs-15V power.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921459456.9U CN210431376U (en) | 2019-09-03 | 2019-09-03 | IGBT gate pole drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921459456.9U CN210431376U (en) | 2019-09-03 | 2019-09-03 | IGBT gate pole drive circuit |
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| Publication Number | Publication Date |
|---|---|
| CN210431376U true CN210431376U (en) | 2020-04-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921459456.9U Active CN210431376U (en) | 2019-09-03 | 2019-09-03 | IGBT gate pole drive circuit |
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| CN (1) | CN210431376U (en) |
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