CN214588841U

CN214588841U - Micro-display driving chip structure with anti-photoelectric effect

Info

Publication number: CN214588841U
Application number: CN202121293376.8U
Authority: CN
Inventors: 吕迅; 刘晓佳; 刘胜芳; 孙云翔; 崔胜胜
Original assignee: Semiconductor Integrated Display Technology Co Ltd
Current assignee: Semiconductor Integrated Display Technology Co Ltd
Priority date: 2021-06-10
Filing date: 2021-06-10
Publication date: 2021-11-02
Anticipated expiration: 2031-06-10

Abstract

The utility model discloses a little display driver chip structure with anti photoelectric effect, little display driver chip structure are equipped with the silicon chip, be equipped with the dielectric layer on the silicon chip, be equipped with the light shield layer in the dielectric layer, the light shield layer distributes on the top layer metal in pixel area or positive pole interval department and peripheral drive circuit. The utility model discloses distribute shading metal level structure on the top layer metal or positive pole interval department and the peripheral drive circuit in pixel area, be used for sheltering from the light that comes from LED and OLED, avoid the high light to shine silicon substrate and MOSFET, avoid the interference current that photoelectric effect produced, solve the splash screen that the drive signal disorder leads to, often light, not bright scheduling problem.

Description

Micro-display driving chip structure with anti-photoelectric effect

Technical Field

The utility model relates to a little display driver chip field.

Background

Silicon-based MOSFET (metal-oxide-semiconductor field effect transistor) driver chips have been widely used in the field of microdisplays, including silicon-based organic light emitting diodes (oleds), Micro LEDs, Digital Light Processing (DLP), etc. In order to meet the application of projection such as virtual reality (AR) and Mixed Reality (MR), the brightness of the microdisplay is more and more high, and the brightness is more than 20000 nit. However, with the improvement of the brightness of the device, the photo-electric effect causes more and more photo-generated electrons on the silicon substrate, and larger photo-generated current can affect the on and off of the MOSFET, and finally, a micro-display driving signal is disordered and appears as a flashing screen, a normally bright state, a non-bright state or other defects. Therefore, it is necessary to develop a micro display driving chip having an anti-photoelectric effect for high brightness.

By developing a shading metal layer structure, the problem of driving signal disorder caused by photoelectric effect is solved. The shading metal layer can be selected from Al, Cu, Ti, Ta, Mo, W and the like, is distributed on the top metal or anode interval of the pixel area and on the peripheral driving circuit and is used for shading light from the LED and the OLED, avoiding strong light from irradiating the silicon substrate and the MOSFET, avoiding interference current generated by photoelectric effect and solving the problems of screen flashing, normal brightness, no brightness and the like caused by drive signal disorder.

Disclosure of Invention

The utility model discloses realize a little display driver chip, can avoid the interference current that photoelectric effect produced, solve the wrong flashing screen that leads to of drive signal, often bright, not bright scheduling problem.

In order to realize the purpose, the utility model discloses a technical scheme be: a micro-display driving chip structure with an anti-photoelectric effect is provided with a silicon wafer, a dielectric layer is arranged on the silicon wafer, a shading layer is arranged in the dielectric layer, and the shading layer is distributed on top metal or anode intervals of a pixel area and a peripheral driving circuit.

The shading layer is a metal layer made of Al, Cu, Ti, Ta, Mo or W.

The Micro display driving chip is a Micro LED chip, a grid electrode, a source electrode and a drain electrode which are contacted with a silicon wafer are arranged in the medium layer, the source electrode is electrically connected with a metal connecting line in the medium layer through metal filled in the through hole, and the drain electrode is connected with top layer metal on the top of the medium layer and the LED chip on the top layer metal through the metal filled in the through hole.

The Micro display driving chip is a Micro OLED chip, a grid electrode, a source electrode and a drain electrode which are in contact with a silicon wafer are arranged in the dielectric layer, the source electrode is electrically connected with a metal connecting line in the dielectric layer through metal filled in the through hole, and the drain electrode is connected with an anode at the top of the dielectric layer through the metal filled in the through hole.

The anode and the dielectric layer are covered with an organic layer and a cathode, and the organic layer and the cathode are covered with an encapsulation layer.

The metal filled in the through hole is tungsten or copper, and the dielectric layer is made of silicon oxide or silicon nitride.

The utility model discloses distribute shading metal level structure on the top layer metal or positive pole interval department and the peripheral drive circuit in pixel area, be used for sheltering from the light that comes from LED and OLED, avoid the high light to shine silicon substrate and MOSFET, avoid the interference current that photoelectric effect produced, solve the splash screen that the drive signal disorder leads to, often light, not bright scheduling problem.

Drawings

The following is a brief description of the contents expressed by each figure in the specification of the present invention:

FIG. 1 is a schematic diagram of a conventional Micro LED;

FIG. 2 is a schematic diagram of a Micro LED with anti-photoelectric effect;

FIG. 3 is a schematic diagram of a conventional Micro OLED;

FIG. 4 is a schematic view of a Micro OLED with anti-photoelectric effect;

FIG. 5 is a flow chart of the process of manufacturing the anti-photoelectric effect micro-display driving chip.

Detailed Description

The following description of the embodiments with reference to the drawings is intended to illustrate the present invention in further detail, such as the shapes and structures of the components, the mutual positions and connections between the components, the functions and working principles of the components, the manufacturing process, and the operation and use methods, etc., so as to help those skilled in the art understand the present invention more completely, accurately and deeply.

A micro-display driving chip structure with anti-photoelectric effect is shown in fig. 2 and 4, and solves the problem of driving signal disorder caused by photoelectric effect through a shading layer. The shading layer is of a single-layer film structure and is attached in the dielectric layer, and the arranged area is at the top metal or anode interval of the pixel area and on the peripheral driving circuit, so that shading is formed. The shading metal layer can be made of Al, Cu, Ti, Ta, Mo, W and the like, is used for shading light from the LED and the OLED, avoids strong light from irradiating the silicon substrate and the MOSFET, avoids interference current generated by photoelectric effect, and solves the problems of screen flashing, normal brightness, no brightness and the like caused by disorder of driving signals. The method can be applied to the semiconductor and display industries, in particular to the Micro display (Micro OLED, Micro LED and the like) industry.

The currently commonly used standard Micro display driving wafer is selected, and the Micro display driving chip is divided into a Micro LED chip shown in fig. 1 and 2, or a Micro OLED chip shown in fig. 3 and 4.

If the LED chip is a Micro LED chip, a grid electrode, a source electrode and a drain electrode which are contacted with the silicon chip are arranged in the medium layer, the source electrode is electrically connected with a metal connecting line in the medium layer through metal filled in the through hole, and the drain electrode is connected with top layer metal on the top of the medium layer and the LED chip on the top layer metal through the metal filled in the through hole.

If the chip is a Micro OLED chip, a grid electrode, a source electrode and a drain electrode which are contacted with a silicon wafer are arranged in the medium layer, the source electrode is electrically connected with a metal connecting line in the medium layer through metal filled in the through hole, the drain electrode is connected with an anode at the top of the medium layer through the metal filled in the through hole, the anode and the medium layer are covered with an organic layer and a cathode, and the organic layer and the cathode are covered with an encapsulation layer.

The manufacturing process of the display driving chip structure comprises shading metal deposition, photoetching, etching and stripping, as shown in fig. 5, a dielectric layer is manufactured on a silicon chip, a grid electrode, a source electrode and a drain electrode are manufactured in the dielectric layer, and corresponding via holes are manufactured, are used for connecting a lower layer circuit and can select silicon oxide or silicon nitride, and the manufacturing process comprises dielectric layer (silicon oxide and silicon nitride) deposition, chemical mechanical grinding, photoetching, etching and stripping; the via hole is filled with metal for connecting with a lower layer circuit, tungsten or copper can be selected, the preparation process comprises metal deposition or electroplating, chemical mechanical grinding, the preparation of the micro display driving chip is completed, and the luminous layer is prepared according to a common method.

The present invention has been described above with reference to the accompanying drawings, and it is obvious that the present invention is not limited by the above-mentioned manner, and various insubstantial improvements can be made without modification to the method and technical solution of the present invention, or the present invention can be directly applied to other occasions without modification, all within the scope of the present invention.

Claims

1. The utility model provides a little display driver chip structure with anti photoelectric effect, little display driver chip structure is equipped with the silicon chip, be equipped with the dielectric layer on the silicon chip, its characterized in that: and a shading layer is arranged in the dielectric layer and is distributed at the top metal or anode interval of the pixel region and on the peripheral driving circuit.

2. A microdisplay driving chip architecture with anti-photoelectric effect according to claim 1, characterized in that: the shading layer is a metal layer made of Al, Cu, Ti, Ta, Mo or W.

3. A microdisplay driving chip architecture with anti-photoelectric effect according to claim 2, characterized in that: the Micro display driving chip is a Micro LED chip, a grid electrode, a source electrode and a drain electrode which are contacted with a silicon wafer are arranged in the medium layer, the source electrode is electrically connected with a metal connecting line in the medium layer through metal filled in the through hole, and the drain electrode is connected with top layer metal on the top of the medium layer and the LED chip on the top layer metal through the metal filled in the through hole.

4. A microdisplay driving chip architecture with anti-photoelectric effect according to claim 2, characterized in that: the Micro display driving chip is a Micro OLED chip, a grid electrode, a source electrode and a drain electrode which are in contact with a silicon wafer are arranged in the dielectric layer, the source electrode is electrically connected with a metal connecting line in the dielectric layer through metal filled in the through hole, and the drain electrode is connected with an anode at the top of the dielectric layer through the metal filled in the through hole.

5. The micro-display driving chip structure with anti-photoelectric effect according to claim 4, wherein: the anode and the dielectric layer are covered with an organic layer and a cathode, and the organic layer and the cathode are covered with an encapsulation layer.

6. A microdisplay driving chip architecture with anti-photoelectric effect according to claim 3, 4 or 5 characterized in that: the metal filled in the through hole is tungsten or copper, and the dielectric layer is made of silicon oxide or silicon nitride.