CN214519539U - Polishing pad - Google Patents
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- CN214519539U CN214519539U CN202023289410.2U CN202023289410U CN214519539U CN 214519539 U CN214519539 U CN 214519539U CN 202023289410 U CN202023289410 U CN 202023289410U CN 214519539 U CN214519539 U CN 214519539U
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Abstract
The utility model discloses a polishing pad, which comprises a grinding layer, wherein the grinding layer is in direct contact with a ground material with the diameter Dw, the grinding layer comprises at least two concentric circle grooves, the innermost concentric circle groove is defined as a first concentric circle, and the outermost concentric circle groove is defined as a second concentric circle; the first concentric circle and the second concentric circle define a plurality of polishing areas, and the widths of the three polishing areas from the circle center to the edge of the polishing layer are W1, W2 and W3 in sequence, wherein the width of the second polishing area W2 satisfies the following conditions: w2 ═ 0.8Dw-0.995 Dw; the utility model discloses a carry out the integrated design to the different grinding zone of polishing pad and the relevant parameter of slot, make the utility model discloses a polishing pad has excellent comprehensive properties.
Description
Technical Field
The utility model relates to a polishing pad, concretely relates to polishing pad with well designed surface groove structure for to the chemical mechanical polishing of the material ground.
Background
In the fabrication of integrated circuits, other electronic devices, and optical materials, many processes involving polishing, thinning, or planarizing of the material are most commonly used chemical mechanical polishing. The action principle of chemical mechanical polishing is that on a fixed polishing machine, a grinding liquid acts on a polishing pad, the polishing pad is in contact with the surface of a ground material, chemical reaction can occur, meanwhile, the polishing pad and the ground material do rotary motion on the machine, mechanical action of shearing is generated, and the chemical action and the mechanical action polish the ground material together to form a desired pattern structure.
Therefore, the flow and distribution of the slurry and the distribution of the mechanical force generated by the grooves have a function of determining the performance of the chemical mechanical polishing pad, and many attempts have been made to provide a polishing pad having excellent overall performance in terms of polishing rate, non-uniformity, defect rate, dishing and erosion, etc., with respect to the material of the polishing pad and the structure of the grooves.
Chinese patent publication No. CN102498549A discloses a polishing pad having a concentric groove structure with respect to the width W of the concentric groovesGAnd a faying surface WLThe relationship of (a) to (b) was investigated, but the polishing pad had an excessively large groove ratio, which easily caused a decrease in polishing rate.
Chinese patent publication No. CN105793962B discloses a polishing pad with an offset concentric groove pattern, which comprises a groove region and a removal region, wherein the removal region does not contain grooves, but the purpose of the removal region is to reduce the defect of the edge of the polishing pad, thereby improving the scratch of the polished substrate, and does not disclose the relationship between the specific parameters of the peripheral surface and the polishing performance, nor how to solve the problem of polishing non-uniformity.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model provides a polishing pad, including the grinding layer, the grinding layer is with the direct contact of the material to be ground that the diameter is Dw, the grinding layer includes at least two concentric circles slot, defines the concentric circle slot of the innermost as first concentric circle, and the concentric circle slot of the outermost is the second concentric circle; the first concentric circle and the second concentric circle define a plurality of polishing regions, and are defined in a radial direction, wherein a distance from an innermost side of the first concentric circle to a center of the polishing layer is W1, a distance from an outermost side of the second concentric circle to an edge of the polishing layer is W3, and a radius of the polishing layer is R, wherein:
a first polishing zone having a first concentric circular inner region with a width W1;
a second polishing zone having a region between the first concentric circle and the second concentric circle, having a width W2 ═ R-W1-W3;
a third grinding zone; having a region between the second concentric circle and the edge of the polishing layer having a width W3;
the second polishing region width W2 and the diameter Dw of the material to be polished satisfy:
W2＝0.8Dw-0.995Dw；
the width of the concentric circular grooves of the second grinding area is Wa, the distance between the grooves is P, and the range of Wa/P is 0.05-0.35. According to an embodiment of the present invention, the W3/R is in the range of 0.05-0.12; the W2/R range is 0.61-0.80; the W2/P range is 50-500.
According to an embodiment of the present invention, the W1/R is in the range of 0.11-0.33; W3/R ranges from 0.06 to 0.10; the W2/R range is 0.62-0.77; the W2/P range is 70-380.
According to an embodiment of the present invention, the depth of the concentric grooves is Da, and the Da is in a range of 0.1-0.8 times the thickness of the polishing layer.
According to an embodiment of the present invention, the radius R of the polishing pad is 500mm, Sa ═ pi ═ Wa (2W1+ W2) × (W2/P-Wa/P +1), and Sa ranges from 40000-2。
According to the utility model discloses an embodiment, the third is ground the district and is still included the third slot, the outside end and the grinding layer edge connection of third slot, the medial extremity setting of third slot is inside the third region, does not link to each other with the regional concentric circles slot of second, the number of third slot is 2K, and 1 is less than or equal to K is less than or equal to 48, and K is the integer.
According to the present invention, the third groove has a structure of a straight line, a curved line, a combination of straight lines, a combination of curved lines, or a combination of straight lines and curved lines.
According to an embodiment of the present invention, the third trench is a straight line, the length of the third trench is Lb, 0.50W3 Lb 0.99W3, the width of the third trench is Wb, and Wb ranges from 0.5 mm to 6 mm.
According to an embodiment of the present invention, the third trench is a straight line, the length of the third trench is Lb, 0.80W3 Lb 0.95W3, the width of the third trench is Wb, and Wb ranges from 2.5 mm to 4.5 mm.
According to an embodiment of the invention, the groove width Wa is in the range of 0.1-0.6mm, preferably 0.2-0.55 mm.
According to one embodiment of the present invention, W2/P is in the range of 70-200.
According to the utility model discloses an embodiment, the total area Sb of third slot with the total area Sa of the regional concentric circles slot of second satisfies: Sb/Sa is more than or equal to 0.01 and less than or equal to 0.2.
According to the utility model discloses an embodiment, the total area Sb of third slot with the total area Sa of the regional concentric circles slot of second satisfies: Sb/Sa is more than or equal to 0.02 and less than or equal to 0.1.
According to an embodiment of the present invention, a ratio of a total volume Vb of the third groove to a total volume Va of the second region concentric groove ranges from 0.005 to 0.3.
According to an embodiment of the present invention, a ratio of a total volume Vb of the third groove to a total volume Va of the second region concentric groove ranges from 0.01 to 0.15.
According to one embodiment of the present invention, W2/P ranges from 70 to 200, and W3/R ranges from 0.06 to 0.10.
According to an embodiment of the present invention, a ratio of the depth Db of the third groove to the depth Da of the second region concentric groove, i.e. Db/Da, is in a range of 0.5-1.5.
According to one embodiment of the present invention, the polishing layer of the polishing pad optionally further comprises an endpoint detection window, preferably the detection window is an integrity window incorporated into the polishing layer.
The above embodiments are merely specific descriptions made on the technical idea of the present invention, and should not be construed as limiting the present invention to these embodiments.
The beneficial effects of the utility model reside in that:
through the design of different grinding areas of the grinding layer and the size of the grooves of the grinding layer, the polishing pad with excellent comprehensive performance is obtained, the defect degree of the material to be polished is low, the grinding rate and the grinding uniformity are good, and the polishing pad has low dishing and erosion.
Drawings
The above and other objects, features and advantages of the present invention will become more readily apparent as the following detailed description of the preferred embodiments proceeds with reference to the accompanying drawings, but without representing the invention, the proportions and dimensions of which are defined in the schematic drawings.
Fig. 1 shows a plan view of a polishing pad according to a preferred embodiment of the present invention.
FIG. 2 shows a cross-sectional view of the polishing pad of the preferred embodiment of FIG. 1 at section A-A.
Fig. 3 shows a plan view of a polishing pad according to another preferred embodiment of the present invention.
Fig. 4 shows a plan view of a polishing pad according to another preferred embodiment of the present invention.
Fig. 5 shows a plan view of a polishing pad according to another preferred embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the accompanying drawings.
Implementation mode one
Fig. 1 is a plan view exemplarily showing a polishing pad according to a preferred embodiment of the present invention. Referring to FIG. 1, the polishing pad of the present invention is suitable for polishing or planarizing at least one of semiconductor, optical, and magnetic substrates. The polishing pad includes an abrasive layer 100, and the abrasive layer 100 is in direct contact with a material 00 to be polished having a diameter Dw.
The polishing layer 100 includes at least two concentric circular grooves, and the concentric circular grooves of the present invention are concentric circular grooves with different radii. Defining the innermost concentric circular groove as a first concentric circle 11 and the outermost concentric circular groove as a second concentric circle 12; the first concentric circle and the second concentric circle define a plurality of polishing regions, and are defined in the radial direction, the distance from the innermost side of the first concentric circle to the center of the polishing layer is W1, the distance from the outermost side of the second concentric circle to the edge 10 of the polishing layer is W3, and the radius of the polishing layer is R, so that the three polishing regions are distributed as follows:
a first polishing zone having an inner region of a first concentric circle 11 and a width W1;
a second grinding zone having a region between the first concentric circle 11 and the second concentric circle 12 with a width W2 ═ R-W1-W3;
a third grinding zone; having an area between the second concentric circle 12 and the edge 10 of the polishing layer with a width W3;
the arrangement and size of the grooves in the polishing layer directly affect the polishing performance of the polishing pad. The utility model discloses in, second grinding zone width W2 satisfies: w2-0.8 Dw-0.995 Dw. The design of the parameters can reduce the polishing rate of the edge of the polished material and effectively improve the polishing nonuniformity.
The second polishing zone of the first embodiment further comprises a plurality of concentric grooves, e.g., 11a, 11b, 11 c.
With continued reference to FIG. 2, FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1, wherein the width of the concentric grooves defining the second region is Wa, the pitch between two adjacent grooves is P, and the depth of the grooves is defined as the distance from the grooves to the polishing surface of the polishing layer in the vertical direction, and is defined as Da. The depth Da of the second grinding is defined to be 0.1-0.8 times the thickness of the grinding layer.
Aiming at the size, the utility model limits the Wa/P range to be 0.05-0.35; for example, 0.07, 0.10, 0.12, 0.13, 0.15, 0.17, 0.20, 0.22, 0.25, 0.26 and the like are preferable, and the range of 0.1 to 0.3 is more preferable.
The utility model further defines the proportional relation between the widths of the three grinding areas and the radius R of the polishing pad, and the W2/R is limited to be in the range of 0.61-0.80, preferably 0.62-0.77, and more preferably 0.73-0.77; limiting the W1/R to be in the range of 0.11-0.33; the W3/R is limited to a range of 0.05-0.12, more preferably 0.06-0.10.
The utility model discloses further define second grinding zone width W2 and set up the proportional relation between the concentric circles slot pitch P wherein, the scope of restricting W2/P is 50-500, preferably 70-380, more preferably 70-200, and this ratio can approximate the number of sign slot, and the number of concentric circles slot of second grinding zone can be preferably 96, 128, 136, 144, 160, 176, 192, 200, the multiple of 8 such as 208.
As a preferred embodiment of the present invention, the radius R of the polishing pad is 300-; 12 cun, i.e., Dw is 300 mm; and 18 inches, i.e., Dw is 450mm wafer. The size of the polishing pad and the second polishing region is adjusted according to the wafer size, wherein W2 is 0.8Dw-0.995 Dw.
The preferred embodiment is as follows:
the wafer size is 12 inches (Dw is 300mm), the radius R of the polishing pad is 350-400mm, the area of the 1 st groove 11 is S1; the radius of the groove is 2 nd, 3 rd, … th and nth grooves in sequence from small to large, and the nth groove is the concentric circular groove 12. Accordingly, the areas are S2, S3, …, Sn.
The calculation can be known that the number of the current,
S1＝π(W1+Wa)2-πW12＝π(2W1*Wa+Wa2)
S2＝π[2(W1+P)*Wa+Wa2]
S3＝π[2(W1+2P)*Wa+Wa2]
…
Sn＝π[2(W1+(n-1)P)*Wa+Wa2]
total groove area Sa ═ pi { nWa2+2Wa[n*W1+n(n-1)*P/2]}
W2 ═ P + Wa (n-1), then n ═ 1+ (W2-Wa)/P
The total groove area Sa is obtained by converting the number n of grooves by W2, Wa, and P:
sa ═ π × Wa (2W1+ W2) (W2/P-Wa/P +1), in the preferred embodiment, the area is limited to 40000 and 200000mm2。
Further preferably, the groove width Wa is 0.1 to 0.6mm, preferably 0.2 to 0.55 mm. The groove pitch P is 1 to 4mm, preferably 1 to 3.5 mm.
As can be seen from the above equation of the groove area, the area of the groove is related to the width Wa of the groove, the width W1 of the first polishing region, the width W2 of the second polishing region, and the parameters W2/P and Wa/P. The groove area is an important factor affecting the groove polishing rate, and therefore the present invention is defined with respect to the above parameters, for example, Wa/P is in the range of 0.05-0.35, and W2/P is in the range of 70-380.
Definition Sa ═ pi × Wa (2W1+ W2) × (W2/P-Wa/P +1), and in the embodiment of the present invention, the range of Sa is preferably 40000-2。
Second embodiment
As another preferred embodiment of the present invention, in the first embodiment, the third polishing region of the polishing pad may further include a third groove.
With further reference to FIG. 3, the polishing pad includes an abrasive layer 200, the abrasive layer 200 being in direct contact with the material being abraded. The polishing layer 200 includes at least two concentric circular grooves, the innermost concentric circular groove is defined as a first concentric circle 21, and the outermost concentric circular groove is defined as a second concentric circle 22; the first concentric circle and the second concentric circle define a plurality of abrasive regions;
the dimensions and parameter ranges of the first polishing region and the second polishing region in the second embodiment are similar to those in the first embodiment, and the description thereof is not repeated.
The third polishing region of the polishing layer 200 further includes a third groove 23 comprising a series of linear grooves, e.g., 23a, 23 b. The outer side end of the third groove is connected with the edge of the grinding layer, the third groove extends along the radial direction, and the inner side end of the third groove is arranged in the third area; the third grooves can form a certain included angle with the radial direction, the angle range is 0-90 degrees, the inner side ends are not connected with the concentric circular grooves of the second area, the number of the third grooves is 2K, K is more than or equal to 1 and less than or equal to 48, and K is an integer.
Preferably, the number of the third trenches is a multiple of 4, and more preferably, the number of the third trenches is a multiple of 8.
The third grooves are defined by a length Lb, and preferably one end of each third groove is connected with the edge of the polishing layer, and the other end of each third groove is arranged in the third polishing region. The utility model discloses in, the parameter of first, two, three grinding zone is in the within range that W1/R, W2/R, W3/R, Wa/P and W2/P were injectd, and the scope of the third slot length Lb of third grinding zone is preferred: 0.50W3 Lb 0.99W3, more preferably 0.80W3 Lb 0.95W 3.
Defining the width of the third groove as Wb, and the width of the third groove is 0.5-6 mm; more preferably 2.5-4.5 mm.
As described in the first embodiment, the total area of the concentric grooves of the second polishing zone is Sa, the present invention further defines that the total area Sb of the third grooves and the total area Sa of the concentric grooves of the second region satisfy 0.01 ≦ Sb/Sa ≦ 0.2, such as 0.01, 0.03, 0.04, 0.05, 0.07, 0.1, 0.12, 0.13, 0.14, 0.15. The area ratio affects the distribution of the polishing liquid and the efficiency of removing the waste residue, and is more preferably 0.02 to 0.1.
In embodiment two, the total area Sb of the third trenches is 2 × K × Lb.
The third groove has a depth Db, which is the distance from the groove to the polishing surface of the polishing layer. Experimental research finds that the depth Db of the third groove has certain correlation with the depth Da of the concentric grooves, and the utility model discloses the scope of further injecing Db/Da is 0.5-1.5. The utility model further limits the Db/Da range to be 0.8-1.2, and the polishing performance is better.
As can be seen from the calculation, Vb/Va is (Sb × Db)/(Sa × Da), and the present invention further defines that the ratio of the total volume Vb of the third grooves to the total volume Va of the second region concentric circular grooves is in the range of 0.005 to 0.3, and more preferably in the range of 0.01 to 0.15. For example, 0.02, 0.03, 0.04, 0 may be preferred. 05,0.06,0.07,0.08,0.09, 0.1,0.11,0.12,0.13,0.14. The volume ratio is within the range, the whole transport capacity of the polishing solution in the groove and the whole slag discharge capacity of the waste liquid can be reasonably balanced, and the polishing pad has excellent grinding performance.
Third embodiment
As another preferred embodiment of the present invention, in the first embodiment, the third polishing region of the polishing pad may further include a third groove.
With further reference to FIG. 4, the polishing pad includes an abrasive layer 300, the abrasive layer 300 being in direct contact with the material being abraded. The polishing layer 300 includes at least two concentric circular grooves, the innermost concentric circular groove is defined as a first concentric circle 31, and the outermost concentric circular groove is defined as a second concentric circle 32; the first concentric circle and the second concentric circle define a plurality of abrasive regions; the dimensions and parameter ranges of the first polishing region and the second polishing region in the third embodiment are similar to those in the first embodiment, and the description thereof is not repeated.
The third grooves of the third polishing zone of the polishing layer 300 also include two types of grooves, a main groove 33 and a secondary groove 34, both of which are also a series of linear grooves, such as main grooves 33a, 33 b; the sub-trenches 34a, 34b, 34c, etc. The outer side ends of the different types of third grooves are connected with the edge of the grinding layer, the different types of third grooves extend along the radial direction, and the inner side ends of the third grooves are arranged in the third area; the third grooves can form a certain included angle with the radial direction, the angle range is 0-90 degrees, the inner side ends of the third grooves of different types are arranged in the third area and are not connected with the concentric circular grooves of the second area, the total number of the third grooves is 2 x K, K is more than or equal to 1 and less than or equal to 48, and K is an integer. Preferably, the total number of the different types of the third trenches is a multiple of 4, and more preferably the total number of the third trenches is a multiple of 8.
Defining the length of the third groove as Lb, wherein the lengths of the different types of third grooves can be sequentially marked as Lb1, Lb2 and Lb3 … LbN; one end of the third groove is connected with the edge of the grinding layer, and the other end of the third groove is arranged in the third grinding area. The range of its length LbN is preferably: 0.50W3 ≤ LbN ≤ 0.99W3, and more preferably 0.80W3 ≤ LbN ≤ 0.95W 3. That is, the length of the different types of the third grooves is preferably in the range of 0.50W3-0.99W3, and more preferably in the range of 0.80W3-0.95W 3.
Similarly, the different types of third trench widths may be labeled Wb1, Wb2, Wb3 … WbN, in that order; the width of the different types of third grooves preferably ranges from 0.5 mm to 6 mm; more preferably 2.5-4.5 mm.
As described in the first embodiment, the total area of the concentric grooves of the second polishing zone is Sa, the present invention further defines that the total area Sb of the third grooves and the total area Sa of the concentric grooves of the second region satisfy 0.01 ≦ Sb/Sa ≦ 0.2, such as 0.01, 0.03, 0.04, 0.05, 0.07, 0.1, 0.12, 0.13, 0.14, 0.15. The area ratio affects the distribution of the polishing liquid and the efficiency of removing the waste residue, and is more preferably 0.02 to 0.1.
In embodiment three, the total area of the third trenches is the sum of the areas of the different types of third trenches.
The third groove has a depth Db, which is the distance from the groove to the polishing surface of the polishing layer. Experimental research finds that the depth Db of the third groove has certain correlation with the depth Da of the concentric grooves, and the utility model discloses the scope of further injecing Db/Da is 0.5-1.5. The utility model further limits the Db/Da range to be 0.8-1.2, and the polishing performance is better.
As can be seen from the calculation, Vb/Va is (Sb × Db)/(Sa × Da), and the present invention further defines that the ratio of the total volume Vb of the third grooves to the total volume Va of the second region concentric circular grooves is in the range of 0.005 to 0.3, and more preferably in the range of 0.01 to 0.15. For example, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.1, 0.11, 0.12, 0.13, 0.14 may be used. The volume ratio is within the range, the whole transport capacity of the polishing solution in the groove and the whole slag discharge capacity of the waste liquid can be reasonably balanced, and the polishing pad has excellent grinding performance.
Embodiment IV
The third groove of the present invention is a linear groove, and the third grooves of the second to third embodiments are straight, for example, as another preferred embodiment of the present invention, the third groove of the third polishing region of the polishing pad can be curved.
With further reference to FIG. 5, the polishing pad includes an abrasive layer 400, the abrasive layer 400 being in direct contact with the material being abraded. The polishing layer 400 includes at least two concentric circular grooves, the innermost concentric circular groove is defined as a first concentric circle 41, and the outermost concentric circular groove is defined as a second concentric circle 42; the first concentric circle and the second concentric circle define a plurality of abrasive regions; the dimensions and parameter ranges of the first polishing region and the second polishing region in the fourth embodiment are similar to those in the first embodiment, and the description thereof is not repeated.
The third grooves 43 of the third polishing region of the polishing layer 400 are a series of curved linear grooves, such as 43a, 43 b. The outer side end of the third groove is connected with the edge of the grinding layer, the inner side end of the third groove is arranged in the third area and is not connected with the concentric circular grooves of the second area, the number of the third grooves is 2K, K is more than or equal to 1 and less than or equal to 48, and K is an integer.
Preferably, the number of the third trenches is a multiple of 4, and more preferably, the number of the third trenches is a multiple of 8.
The third grooves are defined by a length Lb, and preferably one end of each third groove is connected with the edge of the polishing layer, and the other end of each third groove is arranged in the third polishing region. The length of the curved groove, the utility model discloses the distance between the outside end of curve and the medial extremity is defined as. The length Lb preferably ranges from: 0.50W3 Lb 0.99W3, more preferably 0.80W3 Lb 0.95W 3.
The width of the curve groove is similar to that of a straight line, namely the line width of the curve, and the range of the width Wb is 0.5-6 mm; more preferably 2.5-4.5 mm.
As described in the first embodiment, the total area of the concentric grooves of the second polishing zone is Sa, the present invention further defines that the total area Sb of the third grooves and the total area Sa of the concentric grooves of the second region satisfy 0.01 ≦ Sb/Sa ≦ 0.2, such as 0.01, 0.03, 0.04, 0.05, 0.07, 0.1, 0.12, 0.13, 0.14, 0.15. The area ratio affects the distribution of the polishing liquid and the efficiency of removing the waste residue, and is more preferably 0.02 to 0.1.
The third groove has a depth Db, which is the distance from the groove to the polishing surface of the polishing layer. Experimental research finds that the depth Db of the third groove has certain correlation with the depth Da of the concentric grooves, and the utility model discloses the scope of further injecing Db/Da is 0.5-1.5. The utility model further limits the Db/Da range to be 0.8-1.2, and the polishing performance is better.
As can be seen from the calculation, Vb/Va is (Sb × Db)/(Sa × Da), and the present invention further defines that the ratio of the total volume Vb of the third grooves to the total volume Va of the second region concentric circular grooves is in the range of 0.005 to 0.3, and more preferably in the range of 0.01 to 0.15. For example, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.1, 0.11, 0.12, 0.13, 0.14 may be used. The volume ratio is within the range, the whole transport capacity of the polishing solution in the groove and the whole slag discharge capacity of the waste liquid can be reasonably balanced, and the polishing pad has excellent grinding performance.
It should be noted that the structure of the third trench may be a straight line, a curved line, a combination of straight lines, a combination of curved lines, or a combination of straight lines and curved lines. Other modifications of the first to fourth embodiments, such as different types of curved grooves, or grooves combining straight lines and curved lines, are also preferred embodiments of the present invention. The length, the width, the Sb/Sa, the Vb/Va and other parameter ranges of the third groove are in the preferable range of the utility model, and the comprehensive performance of the polishing pad is more excellent.
The utility model discloses a large amount of experimental study discoveries, and the polishing pad not only has good grinding rate, and defective rate and lower heterogeneity have effectively reduced the sunken and erosion of wafer, have good grinding performance on the layer of lapping has the above-mentioned slot pattern of injecing.
Examples
Code number explanation:
dw: the diameter of the material to be ground, in mm;
w1: width of the first polishing zone, unit: mm;
w2: width of the second polishing zone, unit: mm;
w3: width of the third polishing zone, unit: mm;
r: radius of polishing pad, unit: mm;
wa: the width of the concentric groove of the second grinding area is unit mm;
p: the groove pitch of the concentric circular grooves of the second grinding area is unit mm;
n: a third number of trenches;
lb: the length of the third groove is in mm;
wb: the width of the third groove is unit mm;
da: depth of concentric groove in unit mm;
db: the depth of the third groove is in mm;
sa, Sb: the total area of the concentric grooves and the total area of the third grooves are respectively in mm2；
Va, Vb: the total volume of the concentric grooves and the total volume of the third grooves in mm3；
It is noted that the polishing layer of the polishing pad of the present invention optionally further comprises an endpoint detection window, preferably the detection window is an integrity window incorporated into the polishing layer.
The polishing pad provided by the utility model comprises a grinding layer and a buffer layer, wherein the hardness of the grinding layer is 58D, and the density is 0.72g/cm3The compressibility was 0.025; the buffer layer has hardness of 72A and density of 0.33g/cm3The compressibility was 0.07.
Grinding parameters and evaluation methods:
the polished wafer was a Cu 12K wafer, the slurry was a diluted solution (15 times) of ANJI U3061A, plus 1% wt H2O2 at a flow rate of 200ml/min, the dresser was a Kinik diamond disk of PDA32P-2N, pressure was 7lbf, head pressure was 2.5psi, platen speed was 97rpm, carrier speed was 91rpm, and polishing time was 45 s.
For the 10 th and 100 th wafers, the polishing rate, polishing non-uniformity and defectivity were measured.
The lapping rate was calculated by measuring the lapping removal at various locations on the wafer over a polishing time using a Nano SpecII tool.
The polishing rate heterogeneity (Nu) was also calculated from the Nano SpecII.
The defectivity is a count of defects on the wafer measured using a KLA-Tencor SP2 analyzer.
Dishing and erosion of the wafer (erosion) were measured by a step profiler (model KLA P-7) and characterized by an average dishing and average erosion of 10 x 10 μm line width.
TABLE 1 groove geometry data for polishing pad samples
| Examples of the invention | DW | W1 | W2 | W3 | R | Wa | P | N | Lb | Wb | Da | Db |
| 1 | 300 | 62.7 | 289.65 | 35 | 387.35 | 0.508 | 3.048 | 32 | 31.85 | 3.85 | 0.787 | 0.787 |
| 2 | 300 | 62.7 | 289.65 | 35 | 387.35 | 0.508 | 3.048 | 0 | 0 | 0 | 0.787 | 0.787 |
| 3 | 300 | 62.7 | 289.65 | 35 | 387.35 | 0.508 | 1.524 | 32 | 31.85 | 3.85 | 0.787 | 0.787 |
| 4 | 300 | 125.0 | 244.35 | 18 | 387.35 | 0.508 | 3.048 | 32 | 16.38 | 3.85 | 0.787 | 0.787 |
| 5 | 300 | 45.0 | 297.35 | 45 | 387.35 | 0.508 | 3.048 | 32 | 36.00 | 3.85 | 0.787 | 0.787 |
| 6 | 450 | 100.0 | 431.02 | 50 | 581.02 | 0.508 | 3.048 | 48 | 45.50 | 4.50 | 0.787 | 0.787 |
| 7 | 300 | 62.7 | 279.65 | 45 | 387.35 | 0.508 | 3.048 | 48 | 42.75 | 5.80 | 0.787 | 1.181 |
| 8 | 300 | 62.7 | 289.65 | 35 | 387.35 | 0.508 | 3.048 | 32 | 33.25 | 0.60 | 0.787 | 0.394 |
| 9 | 300 | 62.7 | 284.65 | 40 | 387.35 | 0.508 | 3.048 | 48 | 36.40 | 3.50 | 0.787 | 1.181 |
| 10 | 300 | 62.7 | 289.65 | 35 | 387.35 | 0.508 | 3.048 | 20 | 28.00 | 2.50 | 0.787 | 0.394 |
| 11 | 300 | 62.7 | 289.65 | 35 | 387.35 | 0.508 | 3.048 | 64 | 31.85 | 3.00 | 0.787 | 0.787 |
| |
300 | 60.0 | 300.35 | 27 | 387.35 | 0.508 | 1.524 | 32 | 26.73 | 3.85 | 0.787 | 0.787 |
| |
300 | 62.7 | 289.65 | 35 | 387.35 | 0.150 | 3.500 | 32 | 31.85 | 3.85 | 0.787 | 0.787 |
| |
300 | 62.7 | 289.65 | 35 | 387.35 | 0.650 | 1.500 | 32 | 31.85 | 3.85 | 0.787 | 0.787 |
Note: the third trench of example 9 is curved as shown in fig. 5; the remaining third grooves are all straight lines, as shown in fig. 3.
TABLE 2 polishing pad sample abrasive layer size calculation parameters
Note: the third trench area of example 9 can be directly obtained by the mapping software.
TABLE 3 evaluation of polishing Properties
The groove pattern of the polishing pad has an important influence on the performance of the polishing pad of the present invention, and as can be seen from examples 1 to 11 and comparative examples 1 to 3, when W2 is 0.8Dw to 0.995Dw, the range of W2/P is 50 to 500, and the range of W2/R is 0.61 to 0.80; the range of Wa/P is 0.05-0.35; the range of W1/R is 0.11-0.33, and the range of W3/R is 0.05-0.12, the polishing pad has better polishing rate (greater than or equal to the polishing speed)
) Defectivity (less than 200), polishing rate non-uniformity (less than 6.2%), average dishing (disching) at 10 x 10 μm line width no higher than 720 a; and erosion (erosion) of 10 x 10 μm line width
Within.
As can be seen from the examples and comparative examples, the width of the second polishing zone of comparative example 1 is larger than the diameter of the wafer, the defectivity of the wafer is significantly increased to be larger than 300, the non-uniformity is less than 13%, and the dishing is higher than that of the wafer
Comparative example 2 has Wa/P of 0.04, which is lower than the suitable range of 0.05 to 0.35, and Sb/Sa is also too high, resulting in a very high defect degree, rising to 454(10 sheets) and 661(100 sheets), with dishing exceeding that of 454(10 sheets)
Comparative example 3 has a Wa/P of 0.43 higher than the suitable range of 0.05 to 0.35 and a higher degree of defectivity of 391(10 pieces) and 377 (100 pieces).
To sum up, the utility model discloses through a lot of experimental study and creative work, the comprehensive consideration of various factors, the polishing pad that accords with the parameter range who obtains has best polishing performance.
Claims (10)
1. A polishing pad is characterized by comprising a grinding layer, wherein the grinding layer is in direct contact with a ground material with the diameter Dw, the grinding layer comprises at least two concentric circular grooves, the innermost concentric circular groove is defined as a first concentric circle, and the outermost concentric circular groove is defined as a second concentric circle; the first concentric circle and the second concentric circle define a plurality of polishing regions, and are defined in a radial direction, wherein a distance from an innermost side of the first concentric circle to a center of the polishing layer is W1, a distance from an outermost side of the second concentric circle to an edge of the polishing layer is W3, and a radius of the polishing layer is R, wherein:
a first polishing zone having a first concentric circular inner region with a width W1;
a second grinding zone having a region between the first concentric circle and the second concentric circle with a width W2= R-W1-W3;
a third grinding zone; having a region between the second concentric circle and the edge of the polishing layer having a width W3;
the second polishing region width W2 and the diameter Dw of the material to be polished satisfy: w2=0.8Dw-0.995 Dw;
the width of the concentric circular grooves of the second grinding area is Wa, the distance between the grooves is P, and the range of Wa/P is 0.05-0.35.
2. The polishing pad of claim 1, wherein W3/R is in the range of 0.05-0.12; the W2/R range is 0.61-0.80; the W2/P range is 50-500.
3. The polishing pad of claim 1, wherein W1/R is in the range of 0.11-0.33; W3/R ranges from 0.06 to 0.10; the W2/R range is 0.62-0.77; the W2/P range is 70-380.
4. The polishing pad of claim 1, wherein the concentric grooves have a depth Da in the range of 0.1-0.8 times the thickness of the polishing layer.
5. The polishing pad of claim 1, wherein the radius R of the polishing layer is 300-2。
6. The polishing pad of any one of claims 1-5, wherein the third polishing region further comprises third grooves, the outer ends of the third grooves are connected to the edge of the polishing layer, the inner ends of the third grooves are disposed inside the third region and are not connected to the concentric grooves of the second region, the number of the third grooves is 2K, K is greater than or equal to 1 and less than or equal to 48, and K is an integer.
7. The polishing pad of claim 6, wherein the third grooves have a configuration that is linear, curvilinear, a combination of linear, a combination of curvilinear, or a combination of linear and curvilinear.
8. The polishing pad of claim 6, wherein the third trenches are straight lines, the third trenches have a length Lb, 0.50W3 Lb 0.99W3, and a width Wb, the width Wb being in a range of 0.5-6 mm.
9. The polishing pad according to claim 6, wherein a total area Sb of the third grooves and a total area Sa of the second polishing zone concentric circle grooves satisfy: Sb/Sa is more than or equal to 0.01 and less than or equal to 0.2.
10. The polishing pad according to claim 6, wherein a ratio of a total volume Vb of the third grooves to a total volume Va of the second region concentric circular grooves is in a range of 0.005 to 0.3.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114274043A (en) * | 2021-12-29 | 2022-04-05 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
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| CN114274043A (en) * | 2021-12-29 | 2022-04-05 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
| CN114274043B (en) * | 2021-12-29 | 2023-02-24 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
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