CN201287300Y - Polishing pad - Google Patents

Polishing pad Download PDF

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Publication number
CN201287300Y
CN201287300Y CNU2008201774067U CN200820177406U CN201287300Y CN 201287300 Y CN201287300 Y CN 201287300Y CN U2008201774067 U CNU2008201774067 U CN U2008201774067U CN 200820177406 U CN200820177406 U CN 200820177406U CN 201287300 Y CN201287300 Y CN 201287300Y
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CN
China
Prior art keywords
groove
polishing pad
polishing
burnishing surface
pad
Prior art date
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Expired - Lifetime
Application number
CNU2008201774067U
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Chinese (zh)
Inventor
邱汉郎
陈少禹
郑裕隆
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BEDA ADVANCED MATERIAL Co Ltd
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BEDA ADVANCED MATERIAL Co Ltd
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Priority to CNU2008201774067U priority Critical patent/CN201287300Y/en
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Publication of CN201287300Y publication Critical patent/CN201287300Y/en
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  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The utility model relates to a polishing pad, in particular to a polishing pad having two groove states, which comprises a polishing face formed with at least one first groove and at least one second groove. The polishing pad is characterized in that the first groove is communicated with the second groove; the first groove is wider and deeper than the second groove. When the polishing pad processes grinding operation, there are the chips generated in grinding or the grinding particles in polishing fluid, the fine ones or the turbid polishing fluid can flow out the polishing pad via the second groove, and the large chips or particles can flow out the polishing pad via the first groove, thereby protecting the surface of the polished objects from being scraped or damaged by the residual grinding particles or sediments on the polishing pad.

Description

Polishing pad
Technical field
The utility model is about a kind of polishing pad, particularly relevant for a kind of polishing pad with two kinds of groove aspects.
Background technology
Electronic chip is to be formed by deposition (Deposition) different layers formed material, for example silicon wafer promptly is one of base material (Substrate) of stratification material, when each new material layer is deposited, often need to use the step of grinding or polishing, removing unnecessary sedimentary deposit material, so that the chip planarization, or reach other purpose, and the process of this kind polishing often be called as the chemically mechanical polishing planarization (Chemical Mechanical Polishing, CMP).Because chip is that material layer is piled up forms by various film (ThinFilm), therefore must be through CMP polishing step repeatedly, could be with the surface evenly removal of material layer by chip, and reach the purpose of planarization.
And usually when carrying out polishing operation, can between chip and polishing pad, import chemical brightening solution (slurry), the chemical action that produced of thin-film material layer and chemical brightening solution by deposition, or with chemical brightening solution in particle generation mechanism, to remove the unnecessary thin layer in partial chip surface, but because polishing fluid can be present between polishing pad and the chip, make easily between polishing pad and the chip and fit fully, and cause the frictional force between polishing pad and the chip to disappear, therefore in order to make polishing operation reach preferable polishing effect, the most general practice is to carve to establish groove on the surface of polishing pad at present, except increasing the frictional force between polishing pad and the chip, second can guarantee that polishing fluid is uniformly distributed on the surface of polishing pad, and the 3rd can make the abrasive grains that is suspended in the polishing fluid flow out via groove with the polishing chip.
In the middle of known technology, there are many patents all to improve at carving the pattern of establishing groove on the pad interface, as TaiWan, China patent I250572, please refer to Figure 1A, its groove 11 is formed on polishing pad 10 face side, and be to select a kind ofly from ring-type, clathrate and helical form at least, as the position of selecting in the middle of the groove 11 of its shape, recess, the through hole in polishing pad 10 tables, Fig. 2 A is the profile of Figure 1A figure a-a ' hatching; As TaiWan, China patent TW200744786, please refer to Fig. 2, its polishing pad 20 has two groups of grooves in its surface, one group is first kind of groove 21, it intersects with the single virtual line that extends towards periphery from the center of burnishing surface 20, this group groove 21 is non-intersect each other, one group is second kind of groove 22, it is from the core part extension towards periphery of burnishing surface, and formed by second kind of groove 22 that contacts with each other in the core zone and the second kind of groove 22 that does not contact in the core zone, and mutually disjointed with any other second kind of groove 22.
The scratch that the impurity that inside produced when though the main purpose of above-mentioned patent was effectively to suppress to grind etc. causes; yet; chip that produces when polishing or the abrasive grains in the polishing fluid are big than groove; can't flow out in the groove by polishing pad in real time; so residual abrasive grains or sediment; can form bigger particle, the surperficial scratch and the damage that cause polishing thing easily.
The utility model content
The purpose of this utility model is to provide a kind of polishing pad, to solve the defective that exists in the known technology.
For achieving the above object, the polishing pad that the utility model provides, this polishing pad has a burnishing surface, and on burnishing surface, form at least one first groove and at least one second groove, wherein polishing pad is characterised in that: first groove is connected with second groove, and the width of first groove is big than the width of second groove, and the degree of depth of first groove is big than the degree of depth of second groove.So when carrying out grinding operation with polishing pad; chip that produces because of polishing or the abrasive grains in the polishing fluid; comparatively tiny person or muddy polishing fluid can flow out polishing pad by second groove; comparatively thick chip or particle can flow out polishing pad by first groove; polishing pad is difficult for because of residual abrasive grains or sediment, and the surperficial scratch and the damage that cause polishing thing.
Effect of the present utility model is:
1) it has the polishing pad of two kinds of groove aspects; so comparatively tiny person or muddy polishing fluid can flow out polishing pad by second groove when grinding; comparatively thick chip or particle can flow out polishing pad by first groove; polishing pad is difficult for because of residual abrasive grains or sediment, and the surperficial scratch and the damage that cause polishing thing.
2) design of its burnishing surface groove helps to increase polishing pad and waits to grind frictional force between the thing.
With centrifugal action lapping liquid is thrown away when 3) design of its burnishing surface groove helps to grind, avoid the residual of abrasive grains or deposition.
4) groove of its polishing pad can guarantee that polishing fluid can be uniformly distributed on the burnishing surface.
Description of drawings
Figure 1A is the front view (known technology) of a polishing pad.
Figure 1B is the profile (known technology) of the a-a ' hatching of a polishing pad.
Fig. 2 is the front view (known technology) of a polishing pad.
Fig. 3 A is the front view of a polishing pad.
Fig. 3 B is the profile of the b-b ' hatching of a polishing pad.
Fig. 4 is the front view of a polishing pad.
Fig. 5 is the front view of a polishing pad.
Primary clustering symbol description in the accompanying drawing
10 polishing pads
11 grooves
20 polishing pads
21 first kinds of grooves
22 second kinds of grooves
30 polishing pads
31 first kinds of grooves
32 second kinds of grooves
40 polishing pads
41 first kinds of grooves
42 second kinds of grooves
50 polishing pads
51 first kinds of grooves
52 second kinds of grooves
The specific embodiment
Because the utility model discloses a kind of polishing pad, particularly relevant for a kind of polishing pad with two kinds of groove aspects.Because the detailed manufacturing or the processing procedure of some polishing pads that the utility model used are to utilize prior art to reach, so in following explanation, do not do complete description.And graphic in the literary composition in following, also not according to the actual complete drafting of relative dimensions, its effect is only being expressed the schematic diagram relevant with the utility model feature.
At first, please refer to Fig. 3 A and Fig. 3 B, is the preferred embodiment schematic diagram according to polishing pad of the present utility model.As shown in Figure 3A, be a kind of polishing pad 30, this polishing pad 30 has a burnishing surface, and on burnishing surface 30, form at least one first groove 31 and at least one second groove 32, help to increase polishing pad and wait to grind frictional force between the thing, wherein polishing pad 30 is characterised in that: first groove 31 is connected with second groove 32, and the width of first groove 31 is big than the width of second groove 32, and the degree of depth of first groove 31 is big than the degree of depth of second groove 32, and the density of first groove 31 is little than the density of second groove 32, shown in the profile of Fig. 3 B.So when carrying out grinding operation with polishing pad; chip that produces because of polishing or the abrasive grains in the polishing fluid; comparatively tiny person or muddy polishing fluid can flow out polishing pad by second groove; comparatively thick chip or particle can flow out polishing pad by first groove; polishing pad is difficult for because of residual abrasive grains or sediment, and the surperficial scratch and the damage that cause polishing thing.
In addition, an end of first groove 31 all is connected with the periphery of polishing pad 30, with centrifugal action lapping liquid is thrown away when therefore helping to grind; The gash depth of second groove 32 is about 0.1mm~1mm, its preferred implementation then is about 0.4mm~0.7mm, and the gash depth of first groove 31 is about 0.2mm~1.5mm, its preferred implementation then is about 0.5mm~1.2mm, and therefore the gash depth of first groove 31 is dark than second groove 32; Therefore polishing pad 30 of the present utility model has a composition surface in addition, on the burnishing surface that is engaged in another polishing pad, can form a multilayer polishing mattress that is coincided by the plural layer polishing pad.
Then, please refer to Fig. 3 A, is the preferred embodiment schematic diagram according to polishing pad first groove of the present utility model.As shown in Figure 3A, first groove 31 is that the center of circle with polishing pad 30 is the center, to the periphery of polishing pad 30 with curve radial mode be located on the polishing pad 30, with centrifugal action lapping liquid is thrown away when therefore helping to grind, avoid the residual of abrasive grains or deposition; Second groove 32 is to be located on the polishing pad 30 in the check mode, therefore can guarantee that polishing fluid can be uniformly distributed on the burnishing surface, forms a kind of polishing pad 30 with two kinds of groove aspects thus.
Please refer to Fig. 4, is another preferred embodiment schematic diagram according to polishing pad first groove of the present utility model.As shown in Figure 4, first groove 41 is that the center of circle with polishing pad 40 is the center, is located on the polishing pad 40 in straight radial shape mode to the periphery of polishing pad 40, with centrifugal action lapping liquid is thrown away when therefore helping to grind, and avoids the residual of abrasive grains or deposition; Second groove 42 is to be located on the polishing pad 40 in the check mode, therefore can guarantee that polishing fluid can be uniformly distributed on the burnishing surface, forms a kind of polishing pad 40 with two kinds of groove aspects thus.
Please refer to Fig. 5, is the another preferred embodiment schematic diagram according to polishing pad first groove of the present utility model.As shown in Figure 5, first groove 51 is to be located on the polishing pad 50 in the check mode, second groove 52 is to be located on the polishing pad 50 in the check mode, therefore can guarantee that polishing fluid can be uniformly distributed on the burnishing surface, forms a kind of polishing pad 50 with two kinds of groove aspects thus.
The above is preferred embodiment of the present utility model only, is not in order to limit the power requirement of the utility model application; Simultaneously above description should be understood and be implemented for those skilled in the art, so other does not break away from the equivalence of being finished under the spirit that the utility model discloses and change or modification, all should be included in the claim scope of application.

Claims (10)

1, a kind of polishing pad, this polishing pad has a burnishing surface, and forms at least one first groove and at least one second groove on this burnishing surface, and wherein this polishing pad is characterised in that:
This first groove is connected with this second groove, and the width of this first groove is big than the width of this second groove, and the degree of depth of this first groove is big than the degree of depth of this second groove.
2, polishing pad as claimed in claim 1 is characterized in that, the density of being located at this first groove of this burnishing surface is little than the density of this second groove.
3, polishing pad as claimed in claim 1 is characterized in that, an end of this first groove is connected with the periphery of this polishing pad.
4, polishing pad as claimed in claim 1 is characterized in that, this first groove is that the center of circle with polishing pad is that the periphery of middle this polishing pad of mind-set is located on this polishing pad so that curve is radial.
5, polishing pad as claimed in claim 1 is characterized in that, this first groove is that the center of circle with polishing pad is that the periphery of middle this polishing pad of mind-set is located on this polishing pad with the straight radial shape.
6, polishing pad as claimed in claim 1 is characterized in that, this first groove is to be located on this polishing pad with the check shape.
7, polishing pad as claimed in claim 1 is characterized in that, this second groove is to be located on this polishing pad with the check shape.
8, polishing pad as claimed in claim 1 is characterized in that, the gash depth of this second groove is 0.1mm~1mm.
9, polishing pad as claimed in claim 1 is characterized in that, the gash depth of this first groove is 0.2mm~1.5mm.
10, a kind of polishing pad, this polishing pad has a burnishing surface, and forms second groove of at least one first groove and at least one check formula on this burnishing surface, and wherein this polishing pad is characterised in that:
This first groove is connected with second groove of this check formula, and the width of this first groove is big than the width of second groove of this check formula, and the degree of depth of this first groove is big than the degree of depth of second groove of this check formula, and the density of this first groove is little than the density of second groove of this check formula.
CNU2008201774067U 2008-10-30 2008-10-30 Polishing pad Expired - Lifetime CN201287300Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2008201774067U CN201287300Y (en) 2008-10-30 2008-10-30 Polishing pad

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2008201774067U CN201287300Y (en) 2008-10-30 2008-10-30 Polishing pad

Publications (1)

Publication Number Publication Date
CN201287300Y true CN201287300Y (en) 2009-08-12

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CN (1) CN201287300Y (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103079767A (en) * 2010-08-18 2013-05-01 Lg化学株式会社 Polishing pad for a polishing system
CN104039506A (en) * 2011-09-30 2014-09-10 Hoya株式会社 Polishing pad and glass substrate manufacturing method using said polishing pad
CN108044500A (en) * 2018-01-15 2018-05-18 华侨大学 A kind of abrasive disk and preparation method based on bionic plant train of thought
CN108655948A (en) * 2018-07-06 2018-10-16 湖北鼎龙控股股份有限公司 Polishing pad and milling apparatus
CN113547450A (en) * 2021-09-22 2021-10-26 湖北鼎汇微电子材料有限公司 Polishing pad, grinding apparatus, and method of manufacturing semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103079767A (en) * 2010-08-18 2013-05-01 Lg化学株式会社 Polishing pad for a polishing system
CN104039506A (en) * 2011-09-30 2014-09-10 Hoya株式会社 Polishing pad and glass substrate manufacturing method using said polishing pad
CN104039506B (en) * 2011-09-30 2016-09-21 Hoya株式会社 Polishing pad and use the manufacture method of glass substrate of this polishing pad
CN108044500A (en) * 2018-01-15 2018-05-18 华侨大学 A kind of abrasive disk and preparation method based on bionic plant train of thought
CN108655948A (en) * 2018-07-06 2018-10-16 湖北鼎龙控股股份有限公司 Polishing pad and milling apparatus
CN108655948B (en) * 2018-07-06 2024-02-23 湖北鼎龙控股股份有限公司 Polishing pad and polishing apparatus
CN113547450A (en) * 2021-09-22 2021-10-26 湖北鼎汇微电子材料有限公司 Polishing pad, grinding apparatus, and method of manufacturing semiconductor device
CN113547450B (en) * 2021-09-22 2022-01-07 湖北鼎汇微电子材料有限公司 Polishing pad, grinding apparatus, and method of manufacturing semiconductor device

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CX01 Expiry of patent term

Granted publication date: 20090812

CX01 Expiry of patent term