CN214351683U - Polishing pad - Google Patents
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- CN214351683U CN214351683U CN202023294359.4U CN202023294359U CN214351683U CN 214351683 U CN214351683 U CN 214351683U CN 202023294359 U CN202023294359 U CN 202023294359U CN 214351683 U CN214351683 U CN 214351683U
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Abstract
The utility model discloses a polishing pad, which comprises a grinding layer, wherein the grinding layer comprises at least two concentric circular grooves, the innermost concentric circular groove is defined as a first concentric circle, and the outermost concentric circular groove is defined as a second concentric circle; first concentric circle and second concentric circle delimit a plurality of grinding regions, and the width of the three grinding regions from the circle center to the edge of the grinding layer is W1, W2, W3, the scope of W1/R is 0.01-0.10, the scope of W2/R is 0.77-0.96, the scope of W3/R is 0.03-0.13, the utility model discloses a carry out the integrated design to the different grinding regions of polishing pad and the relevant parameter of slot thereof, make the utility model discloses a polishing pad has excellent comprehensive properties.
Description
Technical Field
The utility model relates to a polishing pad, concretely relates to polishing pad with well designed grinding layer and buffer layer rerum natura parameter and surface groove structure for to the chemical mechanical polishing by the abrasive material.
Background
In the fabrication of integrated circuits, other electronic devices, and optical materials, many processes involving polishing, thinning, or planarizing of the material are most commonly used chemical mechanical polishing. The action principle of chemical mechanical polishing is that on a fixed polishing machine, a grinding liquid acts on a polishing pad, the polishing pad is in contact with the surface of a ground material, chemical reaction can occur, meanwhile, the polishing pad and the ground material do rotary motion on the machine, mechanical action of shearing is generated, and the chemical action and the mechanical action polish the ground material together to form a desired pattern structure.
Therefore, the flow and distribution of the slurry, the distribution of the mechanical force generated by the grooves, etc. have a determining effect on the performance of the chemical mechanical polishing pad, and on the other hand, the combination of different patterns and materials has different requirements on the effects of the above factors, and the prior art has not been studied about the combination of the groove patterns and the material of the polishing pad. Many attempts have been made to provide polishing pads with excellent overall performance in terms of polishing rate, non-uniformity, defectivity, dishing and erosion.
Publication number CN10249854The 9A chinese patent discloses a polishing pad having a concentric groove structure with respect to the width W of the concentric groovesGAnd a faying surface WLThe relationship of (a) to (b) was investigated, but the polishing pad had an excessively large groove ratio, which easily caused a decrease in polishing rate.
Chinese patent publication No. CN105793962B discloses a polishing pad with an offset concentric groove pattern, which comprises a groove region and a removal region, wherein the removal region does not contain grooves, but the purpose of the removal region is to reduce the defect of the edge of the polishing pad, thereby improving the scratch of the polished substrate, and does not disclose the relationship between the specific parameters of the peripheral surface and the polishing performance, nor how to solve the problem of polishing non-uniformity.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model provides a polishing pad, including the grinding layer, the grinding layer directly contacts with the material to be ground, the grinding layer includes at least two concentric circles slot, defines the concentric circle slot of the innermost as first concentric circle, and the concentric circle slot of the outermost is the second concentric circle; the first concentric circle and the second concentric circle define a plurality of polishing regions, and are defined in a radial direction, wherein a distance from an innermost side of the first concentric circle to a center of the polishing layer is W1, a distance from an outermost side of the second concentric circle to an edge of the polishing layer is W3, and a radius of the polishing layer is R, wherein:
a first polishing zone having a first concentric circular inner region with a width W1;
a second polishing zone having a region between the first concentric circle and the second concentric circle, having a width W2 ═ R-W1-W3;
a third grinding zone; having a region between the second concentric circle and the edge of the polishing layer having a width W3;
the range of W1/R is 0.01-0.10, the range of W2/R is 0.77-0.96, and the range of W3/R is 0.03-0.13;
the width of the concentric circular grooves of the second grinding area is Wa, the distance between the grooves is P, and the range of Wa/P is 0.05-0.39;
the third grinding area further comprises third grooves, the outer side ends of the third grooves are connected with the edges of the grinding layer, the inner side ends of the third grooves are arranged in the second area, the number of the third grooves is 2 x K, K is more than or equal to 1 and less than or equal to 48, and K is an integer.
According to the present invention, the third groove has a structure of a straight line, a curved line, a combination of straight lines, a combination of curved lines, or a combination of straight lines and curved lines.
According to an embodiment of the present invention, the radius R of the polishing pad is 500mm, Sa ═ pi × (2W1+ W2) × (W2/P-Wa/P +1), and Sa ranges from 42000-2。
According to an embodiment of the present invention, the length of the third trench is Lb, W3 ≤ Lb ≤ 2.7W3, the width of the third trench is Wb, and Wb ranges from 0.5 mm to 6 mm.
According to an embodiment of the present invention, the inner side end of the third groove is connected to the nth concentric circular groove from outside to inside of the second region, and n is an integer of 1 to 12.
According to an embodiment of the present invention, the third trench is a straight line, and the length of the third trench is Lb, where Lb is W3+ (n-1) × P, and n is an integer from 3 to 10; the width of the third groove is Wb, and the range of Wb is 2.5-4.5 mm.
According to the utility model discloses an embodiment, the total area Sb of third slot with the total area Sa of the regional concentric circles slot of second satisfies: Sb/Sa is more than or equal to 0.01 and less than or equal to 0.4.
According to one embodiment of the present invention, W2/P ranges from 70 to 380 and W3/R ranges from 0.06 to 0.10.
According to the utility model discloses an embodiment, the total area Sb of third slot with the total area Sa of the regional concentric circles slot of second satisfies: Sb/Sa is more than or equal to 0.01 and less than or equal to 0.2.
According to an embodiment of the invention, the third groove has a depth Db, the concentric circular grooves have a depth Da, and Db/Da is in the range of 0.5-1.5.
According to an embodiment of the invention, the third groove has a depth Db, the concentric grooves have a depth Da, defining Vb/Va ═ (Sb × Db)/(Sa × Da), wherein Vb/Va is in the range of 0.005-0.6.
According to an embodiment of the invention, the groove width Wa is in the range of 0.1-0.6mm, preferably 0.2-0.55 mm.
According to an embodiment of the present invention, the third trench is a straight line, the length of the third trench is Lb, W3 Lb 2.05W 3.
According to an embodiment of the present invention, W2/P is in the range of 100-.
According to an embodiment of the present invention, a ratio of the depth Db of the third groove to the depth Da of the second region concentric groove, i.e. Db/Da, is in a range of 0.8-1.2.
According to an embodiment of the present invention, Vb/Va ═ (Sb × Db)/(Sa × Da) is defined, wherein Vb/Va ranges from 0.008 to 0.24.
In accordance with one embodiment of the present disclosure, the polishing layer of the polishing pad optionally further comprises an endpoint detection window, preferably the detection window is an integrity window incorporated into the polishing layer.
The above embodiments are merely specific descriptions made on the technical idea of the present invention, and should not be construed as limiting the present invention to these embodiments.
The beneficial effects of the utility model reside in that:
by designing the physical parameters of the grinding layer and the buffer layer and combining the design of different grinding areas and the sizes of grooves of the grinding layer, the polishing pad with excellent comprehensive performance is obtained, is particularly suitable for grinding oxide, has low defect degree of a polished material, gives consideration to good grinding rate and grinding uniformity, and keeps lower loss rate (cut rate).
Drawings
The above and other objects, features and advantages of the present invention will become more readily apparent as the following detailed description of the preferred embodiments proceeds with reference to the accompanying drawings, but without representing the invention, the proportions and dimensions of which are defined in the schematic drawings.
Fig. 1 shows a plan view of a polishing pad according to a preferred embodiment of the present invention.
FIG. 2 shows a cross-sectional view of the polishing pad of the preferred embodiment of FIG. 1 at section A-A.
Fig. 3 shows a partial enlargement of the preferred embodiment of fig. 2 within the dashed box B.
Fig. 4 shows a plan view of a polishing pad according to another preferred embodiment of the present invention.
Fig. 5 shows a plan view of a polishing pad according to another preferred embodiment of the present invention.
Fig. 6 shows a plan view of a polishing pad according to another preferred embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the accompanying drawings.
Implementation mode one
Fig. 1 is a plan view exemplarily showing a polishing pad according to a preferred embodiment of the present invention. Referring to FIG. 1, the polishing pad of the present invention is suitable for polishing or planarizing at least one of semiconductor, optical, and magnetic substrates. The polishing pad includes an abrasive layer 100. The polishing layer 100 includes at least two concentric circular grooves, and the concentric circular grooves of the present invention are concentric circular grooves with different radii. Defining the innermost concentric circular groove as a first concentric circle 11 and the outermost concentric circular groove as a second concentric circle 12; the first concentric circle 11 and the second concentric circle 12 define a plurality of polishing regions, and the distance between the innermost side of the first concentric circle 11 and the center of the polishing layer in the radial direction is W1, the distance between the outermost side of the second concentric circle 12 and the edge 10 of the polishing layer is W3, and the radius of the polishing layer is R, the three polishing regions are as follows:
a first polishing zone having an inner region of a first concentric circle 11 and a width W1;
a second grinding zone having a region between the first concentric circle 11 and the second concentric circle 12 with a width W2 ═ R-W1-W3;
a third grinding zone; having an area between the second concentric circle 12 and the edge 10 of the polishing layer with a width W3;
the arrangement and the size of the grooves of the grinding layer directly influence the grinding performance of the polishing pad, the utility model defines the proportional relation between the widths of the three grinding areas and the radius R of the polishing pad, and defines the range of W2/R as 0.77-0.96, preferably 0.78-0.94; limiting the W1/R to be in the range of 0.01-0.10; the W3/R is defined to be in the range of 0.03-0.13, preferably 0.05-0.12, more preferably 0.06-0.10.
Under the injecion in above-mentioned three region, the utility model discloses the slot arrangement to second grinding district and third grinding district has carried out the research. The second polishing zone of the first embodiment further comprises a plurality of concentric circular grooves, e.g., 11a, 11b, 11 c; the third polishing zone has a third groove 13 comprising a series of linear grooves, e.g. 13a, 13 b. The outer side end of the third groove is connected with the edge 10 of the grinding layer, the third groove extends along the radial direction, and the inner side end of the third groove is arranged in the second area; and the number of the third grooves is 2 xK, K is more than or equal to 1 and less than or equal to 48, and K is an integer. The trench design has good polishing rate and low defectivity. Preferably, the number of the third trenches is a multiple of 4, and more preferably, the number of the third trenches is a multiple of 8.
As another embodiment of the present invention, the third groove may further form a certain included angle with the radial direction, the angle range is 0 to 90 °, and when the angle is 0 °, the third groove extends along the radial direction as shown in fig. 1.
With continued reference to FIG. 2, FIG. 2 is a schematic cross-sectional view of FIG. 1 taken along section line A-A, with polishing pad 1 including an abrasive layer (Top pad)2T and a buffer layer (Sub pad) 3S; the width of the concentric grooves defining the second region is Wa, the pitch between two adjacent grooves is P, and the depth Da of the grooves is defined as the distance from the grooves to the polishing surface of the polishing layer in the vertical direction. Similarly, the depth of the third groove is Db; the length of the third trench is defined as Lb, which is the distance between the outer end and the inner end.
In view of the above dimensions, the present invention defines the Wa/P range as 0.05-0.39, preferably 0.05-0.35; for example, 0.07, 0.10, 0.12, 0.13, 0.15, 0.17, 0.20, 0.22, 0.25, 0.26 and the like are preferable, and the range of 0.1 to 0.3 is more preferable.
The utility model discloses further define the second grinding district width W2 and set up the proportional relation between the concentric circles slot pitch P wherein, the scope of restricting W2/P is 70-380, more preferably 100 and one's 380, and this ratio can approximately represent the strip number of slot, and the strip number of the concentric circles slot of second grinding district can be preferably 112, 120, 128, 136, 144, 160, 176, 192, 200, 208, 224 etc. 8 multiples.
The utility model discloses the concentric circles slot to the second grinding district has carried out design research, according to the order of radius from little to big, counts the concentric circles slot for 1 st, 2 nd, 3 rd, the mth, then 1 st slot is concentric circles slot 11 promptly, and the mth slot is concentric circles slot 12 promptly. Accordingly, the areas are S1, S2, S3, …, Sm.
The calculation can be known that the number of the current,
S1＝π(W1+Wa)2-πW12＝π(2W1*Wa+Wa2)
S2＝π[2(W1+P)*Wa+Wa2]
S3＝π[2(W1+2P)*Wa+Wa2]
…
Sm＝π[2(W1+(m-1)P)*Wa+Wa2]
total groove area Sa ═ pi { mWa2+2Wa[m*W1+m(m-1)*P/2]}
W2 ═ P + Wa (m-1), then m ═ 1+ (W2-Wa)/P
The total groove area Sa is obtained by converting the number m of grooves by W2, Wa, and P:
sa ═ π Wa (2W1+ W2) (W2/P-Wa/P +1), in the preferred embodiment, the area is limited to the range of 42000 and 300000mm2。
Further preferably, the groove width Wa is 0.1 to 0.6mm, preferably 0.2 to 0.55 mm. The groove pitch P is 1 to 5mm, preferably 1 to 4 mm.
As can be seen from the above equation of the groove area, the area of the groove is related to the width Wa of the groove, the width W1 of the first polishing region, the width W2 of the second polishing region, and the parameters W2/P and Wa/P. The groove area is an important factor affecting the groove grinding rate, and the present invention is therefore defined with respect to the above parameters, for example, the range of Wa/P is 0.05-0.39, preferably 0.05-0.35; W2/P ranged from 70-380.
Definition Sa ═ pi × Wa (2W1+ W2) (W2/P-Wa/P +1), and in the embodiment of the present invention, the range of Sa is preferably 42000-2。
The utility model discloses in, the parameter in first, two, three grinding district is at W1/R, W2/R, W3/R, Wa/P and the within range that W2/P was injectd, the utility model discloses the medial extremity of the third slot of preferred third grinding district sets up in the second grinding district, and the third slot has length Lb, preferably, Lb and W3 satisfy the relation: w3. ltoreq. Lb.ltoreq.2.7W 3, more preferably W3. ltoreq. Lb.ltoreq.2.05W 3.
The utility model discloses it is continuous with the regional concentric circles slot of second to prefer the third slot, and the medial extremity of definition third slot links to each other with the regional nth concentric circles slot from outside to inside of second, and then the scope of n is 1-12 integer.
Preferably, the third trench is a straight line, and with continued reference to fig. 2, the length of Lb may be calculated using W3 and P: Lb-W3 + (n-1) × P, n preferably ranges from 3 to 10 integers.
The utility model discloses the preferred range of the width Wb of third slot is 0.5-6mm, more preferably 2.5-4.5 mm.
Fig. 3 is a partially enlarged view of fig. 2, in a first embodiment, a third trench is connected to a 3 rd concentric circular trench from outside to inside, and grooving is performed after the third trench is positioned in an actual grooving process, but a certain radian exists at a connection position of the third trench and the concentric circular trench inevitably due to a cutting process, as can be seen from fig. 3, in this embodiment, the length of Lb still satisfies Lb ═ W3+ (n-1)' P.
The utility model discloses it is further limited that the total area Sb of third slot satisfies 0.01 ≦ Sb/Sa ≦ 0.4 with the total area Sa of the second regional concentric circle slot, for example can be 0.01, 0.03, 0.04, 0.05, 0.07, 0.1, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19, 0.20, 0.30, 0.31, 0.32, 0.33, 0.34, 0.35, 0.36, 0.37, 0.38, 0.39, 0.40. The area ratio affects the distribution of the polishing liquid and the efficiency of removing the waste residue, and is more preferably 0.01 to 0.20.
In one embodiment, the total area Sb of the third trench is 2 × K × Lb.
The depth Da of the second grinding is defined to be 0.1-0.8 times the thickness of the grinding layer. The third slot has degree of depth Db, and experimental study finds that the degree of depth Db of third slot has certain correlation with degree of depth Da of concentric circles slot, the utility model discloses further inject the scope of Db Da and be 0.5-1.5, the utility model discloses further inject the scope of Db Da and be 0.8-1.2, polishing performance is better.
The ratio Vb/Va (Sb × Db)/(Sa × Da) is defined to approximately represent the ratio of the total volume Vb of the third trenches to the total volume Va of the concentric circular trenches of the second region, and is in the range of 0.005 to 0.6, and more preferably in the range of 0.008 to 0.24. For example, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.1, 0.11, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19, 0.20, 0.21, 0.22, 0.23, 0.24 may be mentioned. The volume ratio is within the range, the whole transport capacity of the polishing solution in the groove and the whole slag discharge capacity of the waste liquid can be reasonably balanced, and the polishing pad has excellent grinding performance.
Second embodiment
As another preferred embodiment of the present invention,
referring to fig. 4, the polishing pad includes an abrasive layer 200, and the abrasive layer 200 is in direct contact with a material to be polished. The dimensions and parameter ranges of the first polishing region and the second polishing region in the second embodiment are similar to those in the first embodiment, and the description thereof is not repeated.
The third grooves of the third polishing zone of the polishing layer 200 also include two types of grooves, a main groove 23 and a secondary groove 24, which are also a series of linear grooves, such as main grooves 23a, 23 b; the sub-trenches 24a, 24b, etc. The outer side ends of the different types of third grooves are connected with the edge of the grinding layer, the different types of third grooves extend along the radial direction, and the inner side ends of the third grooves are arranged in the second area; the total number of the third grooves is 2 xK, K is more than or equal to 1 and less than or equal to 48, and K is an integer. Preferably, the total number of the different types of the third trenches is a multiple of 4, and more preferably the total number of the third trenches is a multiple of 8.
Defining the length of the third groove as Lb, wherein the lengths of the different types of third grooves can be sequentially marked as Lb1, Lb2 and Lb3 … LbN; one end of the third groove is connected with the edge of the grinding layer, and the other end of the third groove is arranged in the second grinding area. The range of its length LbN is preferably: w3 is not less than LbN not more than 2.7W3, more preferably W3 not more than LbN not more than 2.05W 3. That is, the length ranges of the different types of the third grooves are preferably W3-2.7W3, and more preferably W3-2.05W 3.
The utility model discloses it is continuous with the regional concentric circles slot of second to prefer the third slot, and the medial extremity of definition third slot links to each other with the regional nth concentric circles slot from outside to inside of second, and then the scope of n is 1-12 integer. As shown in fig. 4, the groove 23 is connected to the 5 th groove, and the groove 24 is connected to the 2 nd groove.
Preferably the third trench is a straight line, the length of LbN can be calculated using W3 and P: LbN ═ W3+ (n-1) × P, n preferably ranges from an integer from 1 to 12, preferably from an integer from 2 to 10.
Similarly, the different types of third trench widths may be labeled Wb1, Wb2, Wb3 … WbN, in that order; the width of the different types of third grooves preferably ranges from 0.5 mm to 6 mm; more preferably 2.5-4.5 mm.
The third groove can form a certain included angle with the radial direction, and the angle range is 0-90 degrees.
As described in the first embodiment, the total area of the concentric grooves of the second polishing zone is Sa, the present invention further defines that the total area Sb of the third grooves and the total area Sa of the concentric grooves of the second region satisfy 0.01 ≦ Sb/Sa ≦ 0.4, and may be, for example, 0.01, 0.03, 0.04, 0.05, 0.07, 0.1, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19, 0.20, 0.30, 0.31, 0.32, 0.33, 0.34, 0.35, 0.36, 0.37, 0.38, 0.39, 0.40. The area ratio affects the distribution of the polishing liquid and the efficiency of removing the waste residue, and is more preferably 0.01 to 0.20.
In embodiment two, the total area of the third trenches is the sum of the areas of the different types of third trenches.
The third groove has a depth Db, which is the distance from the groove to the polishing surface of the polishing layer. Experimental research finds that the depth Db of the third groove has certain correlation with the depth Da of the concentric grooves, and the utility model discloses the scope of further injecing Db/Da is 0.5-1.5. The utility model further limits the Db/Da range to be 0.8-1.2, and the polishing performance is better.
The ratio Vb/Va (Sb × Db)/(Sa × Da) is defined to approximately represent the ratio of the total volume Vb of the third trenches to the total volume Va of the concentric circular trenches of the second region, and is in the range of 0.005 to 0.6, and more preferably in the range of 0.008 to 0.24. For example, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.1, 0.11, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19, 0.20, 0.21, 0.22, 0.23, 0.24 may be mentioned. The volume ratio is within the range, the whole transport capacity of the polishing solution in the groove and the whole slag discharge capacity of the waste liquid can be reasonably balanced, and the polishing pad has excellent grinding performance.
Third embodiment
The third groove of the present invention is a linear groove, and the third grooves of the first to second embodiments are straight, for example, as another preferred embodiment of the present invention, the third groove of the third polishing region of the polishing pad can be curved.
With further reference to FIG. 5, the polishing pad includes an abrasive layer 300, the abrasive layer 300 being in direct contact with the material being abraded. The polishing layer 300 includes at least two concentric grooves, the first and second concentric circles defining a plurality of polishing regions; the dimensions and parameter ranges of the first polishing region and the second polishing region in the third embodiment are similar to those in the first embodiment, and the description thereof is not repeated.
The third grooves 33 of the third polishing region of the polishing layer 300 are a series of curved linear grooves, such as 33a, 33 b. The outer side end of the third groove is connected with the edge of the grinding layer, the inner side end of the third groove is arranged in the second area, the number of the third grooves is 2X K, K is more than or equal to 1 and less than or equal to 48, and K is an integer.
Preferably, the number of the third trenches is a multiple of 4, and more preferably, the number of the third trenches is a multiple of 8.
The length of the third groove is defined as Lb, the length of the curve groove, the distance between the curve outer side end and the inner side end. The range of the length Lb is the same as that of the first embodiment, and preferably Lb and W3 satisfy the relationship: w3. ltoreq. Lb.ltoreq.2.7W 3, more preferably W3. ltoreq. Lb.ltoreq.2.05W 3.
The utility model discloses it is continuous with the regional concentric circles slot of second to prefer the third slot, and the medial extremity of definition third slot links to each other with the regional nth concentric circles slot from outside to inside of second, and then the scope of n is the integer of 1-12, and the scope of n is preferably the integer of 3-10.
The width of the curve groove is similar to that of a straight line, namely the line width of the curve, and the range of the width Wb is 0.5-6 mm; more preferably 2.5-4.5 mm.
As described in the first embodiment, the total area of the concentric grooves of the second polishing zone is Sa, the present invention further defines that the total area Sb of the third grooves and the total area Sa of the concentric grooves of the second region satisfy 0.01 ≦ Sb/Sa ≦ 0.4, and may be, for example, 0.01, 0.03, 0.04, 0.05, 0.07, 0.1, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19, 0.20, 0.30, 0.31, 0.32, 0.33, 0.34, 0.35, 0.36, 0.37, 0.38, 0.39, 0.40. The area ratio affects the distribution of the polishing liquid and the efficiency of removing the waste residue, and is more preferably 0.01 to 0.20.
The third groove has a depth Db, which is the distance from the groove to the polishing surface of the polishing layer. Experimental research finds that the depth Db of the third groove has certain correlation with the depth Da of the concentric grooves, and the utility model discloses the scope of further injecing Db/Da is 0.5-1.5. The utility model further limits the Db/Da range to be 0.8-1.2, and the polishing performance is better.
The ratio Vb/Va (Sb × Db)/(Sa × Da) is defined to approximately represent the ratio of the total volume Vb of the third trenches to the total volume Va of the concentric circular trenches of the second region, and is in the range of 0.005 to 0.6, and more preferably in the range of 0.008 to 0.24. For example, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.1, 0.11, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19, 0.20, 0.21, 0.22, 0.23, 0.24 may be mentioned. The volume ratio is within the range, the whole transport capacity of the polishing solution in the groove and the whole slag discharge capacity of the waste liquid can be reasonably balanced, and the polishing pad has excellent grinding performance.
Embodiment IV
As another preferred embodiment of the present invention, the third grooves of the third polishing region of the polishing pad may also be a combination of curves.
With further reference to FIG. 6, the polishing pad includes an abrasive layer 400, the abrasive layer 400 being in direct contact with the material being abraded. The polishing layer 400 includes at least two concentric grooves, the first and second concentric circles defining a plurality of polishing regions; the dimensions and parameter ranges of the first polishing region and the second polishing region in the third embodiment are similar to those in the first embodiment, and the description thereof is not repeated.
The third grooves of the third polishing zone of the polishing layer 400 also include two types of grooves, a primary groove 43 and a secondary groove 44, both of which are also a series of curvilinear grooves, such as primary grooves 43a, 43 b; the sub-trenches 44a, 44b, etc. The outer side ends of the different types of third grooves are connected with the edge of the grinding layer, the different types of third grooves extend along the radial direction, and the inner side ends of the third grooves are arranged in the second area; the total number of the third grooves is 2 xK, K is more than or equal to 1 and less than or equal to 48, and K is an integer. Preferably, the total number of the different types of the third trenches is a multiple of 4, and more preferably the total number of the third trenches is a multiple of 8.
The length of the third groove is defined as Lb, the length of the curve groove, the distance between the curve outer side end and the inner side end. The different types of third trench lengths may be labeled in order Lb1, Lb2, Lb3 … LbN; one end of the third groove is connected with the edge of the grinding layer, and the other end of the third groove is arranged in the second grinding area. The range of its length LbN is preferably: w3 is not less than LbN not more than 2.7W3, more preferably W3 not more than LbN not more than 2.05W 3. That is, the length ranges of the different types of the third grooves are preferably W3-2.7W3, and more preferably W3-2.05W 3.
The utility model discloses it is continuous with the regional concentric circles slot of second to prefer the third slot, and the medial extremity of definition third slot links to each other with the regional nth concentric circles slot from outside to inside of second, and then the scope of n is the integer of 1-12, preferably the integer of 2-10. As shown in fig. 6, the groove 43 is connected to the 5 th groove, and the groove 44 is connected to the 2 nd groove.
Similarly, the different types of third trench widths may be labeled Wb1, Wb2, Wb3 … WbN, in that order; the width of the curved groove is the width of the groove line. The width of the different types of third grooves preferably ranges from 0.5 mm to 6 mm; more preferably 2.5-4.5 mm.
The third groove can form a certain included angle with the radial direction, and the angle range is 0-90 degrees.
As described in the first embodiment, the total area of the concentric grooves of the second polishing zone is Sa, the present invention further defines that the total area Sb of the third grooves and the total area Sa of the concentric grooves of the second region satisfy 0.01 ≦ Sb/Sa ≦ 0.4, and may be, for example, 0.01, 0.03, 0.04, 0.05, 0.07, 0.1, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19, 0.20, 0.30, 0.31, 0.32, 0.33, 0.34, 0.35, 0.36, 0.37, 0.38, 0.39, 0.40. The area ratio affects the distribution of the polishing liquid and the efficiency of removing the waste residue, and is more preferably 0.01 to 0.20.
In embodiment two, the total area of the third trenches is the sum of the areas of the different types of third trenches.
The third groove has a depth Db, which is the distance from the groove to the polishing surface of the polishing layer. Experimental research finds that the depth Db of the third groove has certain correlation with the depth Da of the concentric grooves, and the utility model discloses the scope of further injecing Db/Da is 0.5-1.5. The utility model further limits the Db/Da range to be 0.8-1.2, and the polishing performance is better.
The ratio Vb/Va (Sb × Db)/(Sa × Da) is defined to approximately represent the ratio of the total volume Vb of the third trenches to the total volume Va of the concentric circular trenches of the second region, and is in the range of 0.005 to 0.6, and more preferably in the range of 0.008 to 0.24. For example, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.1, 0.11, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19, 0.20, 0.21, 0.22, 0.23, 0.24 may be mentioned. The volume ratio is within the range, the whole transport capacity of the polishing solution in the groove and the whole slag discharge capacity of the waste liquid can be reasonably balanced, and the polishing pad has excellent grinding performance.
It should be noted that the structure of the third trench may be a straight line, a curved line, a combination of straight lines, a combination of curved lines, or a combination of straight lines and curved lines. Other modifications of the first to fourth embodiments, such as different types of grooves with a combination of straight lines and curved lines, are also preferred embodiments of the present invention. The length, the width, the Sb/Sa, the Vb/Va and other parameter ranges of the third groove are in the preferable range of the utility model, and the comprehensive performance of the polishing pad is more excellent.
The utility model discloses a large amount of experimental study discovers, and the wearing layer has the above-mentioned slot pattern of injecing, and the polishing pad not only has good grinding rate, and defect rate and lower inhomogenity when keeping good grinding performance, loss rate cut rate all keeps at lower level.
Examples
Code number explanation:
w1: width of the first polishing zone, unit: mm;
w2: width of the second polishing zone, unit: mm;
w3: width of the third polishing zone, unit: mm;
r: radius of polishing pad, unit: mm;
wa: the width of the concentric groove of the second grinding area is unit mm;
p: the groove pitch of the concentric circular grooves of the second grinding area is unit mm;
n: a third number of trenches;
lb: the length of the third groove is in mm;
wb: the width of the third groove is unit mm;
da: depth of concentric groove in unit mm;
db: the depth of the third groove is in mm;
sa, Sb: the total area of the concentric grooves and the total area of the third grooves are respectively in mm2；
Vb/Va (Sb × Db)/(Sa × Da) is defined to approximately characterize the volume ratio of the third grooves to the concentric grooves.
It is noted that the polishing layer of the polishing pad of the present invention optionally further comprises an endpoint detection window, preferably the detection window is an integrity window incorporated into the polishing layer.
The utility model discloses polishing pad includes abrasive layer and buffer layer, and wherein the hardness of abrasive layer is 59D, and density is 0.70g/cm3The compression ratio is 0.017; the buffer layer has hardness of 72A and density of 0.33g/cm3The compressibility was 0.07.
Grinding parameters and evaluation methods:
the polished wafer was TEOS 8K wafer, the slurry was slurry D3000 of silica abrasive, the flow rate was 200ml/min, the dresser was a Saeseol diamond disk of AJ45, the pressure was 7lbf, the pressure of the polishing head was 3.5psi, the platen speed was 110rpm, the carrier speed was 108rpm, and the polishing time was 45 s.
Loss rate (cut rate) measurement method: the polishing pad was dressed using AJ45 from Saeseol diamond disk at 60 minutes pressure of 7lbf with deionized water at 500ml/min platen speed of 93rpm and carrier speed of 87 rpm. The rate of wear is determined by measuring the change in thickness of the pad over time.
For the 10 th and 100 th wafers, the polishing rate, polishing non-uniformity and defectivity were measured.
The lapping rate was calculated by measuring the lapping removal at various locations on the wafer over a polishing time using a Nano SpecII tool.
The polishing rate heterogeneity (Nu) was also calculated from the Nano SpecII.
The defectivity is a count of defects on the wafer measured using a KLA-Tencor SP2 analyzer.
TABLE 1 groove geometry data for polishing pad samples
Note: the third trench of example 8 is curved as shown in fig. 5; the remaining third grooves are all straight lines, as shown in fig. 1.
TABLE 2 polishing pad sample abrasive layer size calculation parameters
| Examples of the invention | W1/R | W2/R | W3/R | Wa/P | W2/P | Sa | Lb/W3 | Sb/Sa | Vb/Va | Db/Da |
| 1 | 0.04 | 0.87 | 0.08 | 0.17 | 111.01 | 66426.9 | 1.476 | 0.088 | 0.088 | 1 |
| 2 | 0.04 | 0.87 | 0.08 | 0.33 | 222.01 | 132259.9 | 1.430 | 0.043 | 0.043 | 1 |
| 3 | 0.04 | 0.87 | 0.08 | 0.10 | 111.01 | 39906.0 | 1.285 | 0.127 | 0.127 | 1 |
| 4 | 0.04 | 0.87 | 0.08 | 0.17 | 111.01 | 66426.9 | 1.285 | 0.153 | 0.153 | 1 |
| 5 | 0.10 | 0.85 | 0.05 | 0.17 | 107.50 | 69992.41 | 1.290 | 0.095 | 0.095 | 1 |
| 6 | 0.01 | 0.87 | 0.12 | 0.17 | 111.05 | 61788.89 | 1.203 | 0.216 | 0.216 | 1 |
| 7 | 0.04 | 0.87 | 0.08 | 0.17 | 166.51 | 149086.5 | 1.445 | 0.057 | 0.057 | 1 |
| 8 | 0.04 | 0.87 | 0.08 | 0.17 | 111.01 | 66426.9 | 1.476 | 0.093 | 0.093 | 1 |
| 9 | 0.04 | 0.84 | 0.12 | 0.17 | 106.74 | 61662.94 | 1.475 | 0.389 | 0.584 | 1.5 |
| 10 | 0.04 | 0.87 | 0.08 | 0.17 | 111.01 | 66426.9 | 1.095 | 0.010 | 0.010 | 1 |
| 11 | 0.04 | 0.87 | 0.08 | 0.17 | 111.01 | 66426.9 | 1.000 | 0.059 | 0.059 | 1 |
| 12 | 0.04 | 0.87 | 0.08 | 0.17 | 111.01 | 66426.9 | 2.050 | 0.122 | 0.122 | 1 |
| 13 | 0.04 | 0.87 | 0.08 | 0.17 | 111.01 | 66426.9 | 1.190 | 0.071 | 0.071 | 1 |
| 14 | 0.04 | 0.87 | 0.08 | 0.17 | 111.01 | 66426.9 | 1.860 | 0.110 | 0.110 | 1 |
| D1 | 0.04 | 0.87 | 0.08 | 0.17 | 111.01 | 66426.9 | 0.900 | 0.053 | 0.053 | 1 |
| D2 | 0.11 | 0.76 | 0.14 | 0.17 | 96.24 | 58122.61 | 1.113 | 0.125 | 0.125 | 1 |
| D3 | 0.10 | 0.79 | 0.12 | 0.11 | 64.07 | 39415.57 | 1.422 | 0.200 | 0.200 | 1 |
| D4 | 0.04 | 0.87 | 0.08 | 0.17 | 383.03 | 151470.6 | 1.248 | 0.049 | 0.049 | 1 |
| D5 | 0.04 | 0.87 | 0.08 | 0.04 | 96.67 | 17121.79 | 1.437 | 0.331 | 0.331 | 1 |
| D6 | 0.04 | 0.87 | 0.08 | 0.40 | 222.01 | 158768.2 | 1.190 | 0.030 | 0.030 | 1 |
| D7 | 0.02 | 0.98 | 0 | 0.17 | 124.62 | 79016.4 | 0 | 0 | 0 | 0 |
Note: the third trench area of example 8 can be directly obtained by the mapping software.
TABLE 3 evaluation of polishing Properties
The groove pattern of the polishing pad has an important effect on the performance of the polishing pad of the present invention, and as can be seen from examples 1-14, the range of W1/R is 0.01-0.10, and the range of W2/R is 0.77-0.96; W3/R is in the range of 0.03-0.13, and Wa/P is in the range of 0.05-0.39; and includes third trenches having inner ends disposed in the second polishing region, the polishing pad is well suited for oxide planarization of the material being polished,has better grinding rate (greater than
) Defectivity (less than 90), polishing rate non-uniformity (not higher than 6%), and loss rate at a low level of not higher than 43 μm/hr while maintaining excellent overall performance.
The groove pattern of the polishing pad has an important influence on the performance of the polishing pad of the present invention, and as can be seen from examples and comparative examples,
the length of the third trench of comparative example 1 is less than W3, the defectivity increases to more than 110, and the non-uniformity is poor to 6.6%; comparative example 2, in which W1/R, W2/R and W3/R exceeded the respective ranges, showed a significant increase in the defect rates, i.e., 190(10) tablets and 204 (100) tablets, and exhibited a deterioration in the nonuniformity of 8.2%; comparative example 5 has a Wa/P of 0.04, lower than the appropriate range of 0.05 to 0.39, resulting in a very high defect level, rising to 386(10 chips) and 411(100 chips); comparative example 6 has a Wa/P of 0.40, higher than the appropriate range of 0.05 to 0.39, higher defectivity of 405(10 sheets) and 388(100 sheets), and also higher depletion rate (cut rate) of 47.5 μm/hr; comparative example 7 is a conventional concentric groove, and it can be seen by comparison that the defectivity and polishing non-uniformity of the present invention is significantly lower, and the loss rate (cut rate) is lower.
To sum up, the utility model discloses through a lot of experimental study and creative work, the comprehensive consideration of various factors, the polishing pad that accords with the parameter range who obtains has best polishing performance.
Claims (10)
1. A polishing pad is characterized by comprising an abrasive layer, wherein the abrasive layer is in direct contact with a material to be polished and comprises at least two concentric circular grooves, the innermost concentric circular groove is defined as a first concentric circle, and the outermost concentric circular groove is defined as a second concentric circle; the first concentric circle and the second concentric circle define a plurality of polishing regions, and are defined in a radial direction, wherein a distance from an innermost side of the first concentric circle to a center of the polishing layer is W1, a distance from an outermost side of the second concentric circle to an edge of the polishing layer is W3, and a radius of the polishing layer is R, wherein:
a first polishing zone having a first concentric circular inner region with a width W1;
a second grinding zone having a region between the first concentric circle and the second concentric circle with a width W2= R-W1-W3;
a third grinding zone; having a region between the second concentric circle and the edge of the polishing layer having a width W3;
the range of W1/R is 0.01-0.10, the range of W2/R is 0.77-0.96, and the range of W3/R is 0.03-0.13;
the width of the concentric circular grooves of the second grinding area is Wa, the distance between the grooves is P, and the range of Wa/P is 0.05-0.39;
the third grinding area further comprises third grooves, the outer side ends of the third grooves are connected with the edges of the grinding layer, the inner side ends of the third grooves are arranged in the second area, the number of the third grooves is 2 x K, K is more than or equal to 1 and less than or equal to 48, and K is an integer.
2. The polishing pad of claim 1, wherein the polishing layer has a radius R of 300-2。
3. The polishing pad of claim 1, wherein the third trenches have a length Lb, W3 Lb 2.7W3, and a width Wb, which is in a range of 0.5-6 mm.
4. The polishing pad of claim 1, wherein the inner ends of the third grooves are connected to the nth concentric circular grooves from the outside to the inside of the second region, and n is an integer of 1 to 12.
5. The polishing pad of claim 1, wherein the third grooves are straight lines, the third grooves have a length Lb, Lb = W3+ (n-1) × P, n is an integer of 3-10; the width of the third groove is Wb, and the range of Wb is 2.5-4.5 mm.
6. The polishing pad according to claim 1, wherein a total area Sb of the third grooves and a total area Sa of the second-region concentric-circle grooves satisfy: Sb/Sa is more than or equal to 0.01 and less than or equal to 0.4.
7. The polishing pad of claim 1, wherein W2/P is in the range of 70-380 and W3/R is in the range of 0.06-0.10.
8. The polishing pad according to claim 6, wherein a total area Sb of the third grooves and a total area Sa of the second-region concentric-circle grooves satisfy: Sb/Sa is more than or equal to 0.01 and less than or equal to 0.2.
9. The polishing pad of claim 1, wherein the third grooves have a depth Db, the concentric circular grooves have a depth Da, and Db/Da is in the range of 0.5-1.5.
10. The polishing pad of claim 5, wherein the third grooves have a depth Db, and the concentric circular grooves have a depth Da, defining Vb/Va = (Sb x Db)/(Sa x Da), wherein Vb/Va is in the range of 0.005-0.6.
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| CN114274043A (en) * | 2021-12-29 | 2022-04-05 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
| CN114274043B (en) * | 2021-12-29 | 2023-02-24 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
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