CN214327877U

CN214327877U - Gas injector with double sleeve

Info

Publication number: CN214327877U
Application number: CN202022423997.5U
Authority: CN
Inventors: 吴铭钦; 刘峰
Original assignee: Suzhou Yuzhu Electromechanical Co ltd
Current assignee: Suzhou Yuzhu Electromechanical Co ltd
Priority date: 2020-04-13
Filing date: 2020-10-27
Publication date: 2021-10-01
Anticipated expiration: 2030-10-27
Also published as: CN214106268U; TWI749521B; TW202138610A; CN214218854U; CN215560652U; CN112410761A

Abstract

The utility model relates to a gas injector with double cannula, including a board and a gas injector head, be equipped with the air current recess on the board, it is equipped with a plurality of wafers around and bears the recess. The gas injection head is positioned on the air flow groove, the center of the gas injection head is provided with a purge gas flow channel protruding out of the bottom of the gas injection head, at least one inner sleeve is further arranged in the purge gas flow channel, different types of gases can flow through the inner and outer sleeves, and the gas in the purge gas flow channel can be prevented from being mixed to generate chemical reaction by the shunting mode. The utility model discloses can effectively keep apart different gases in the purge gas flow channel to avoid mixing between the different gases, influence the processing procedure of wafer, and sweep away the dust and the deposit of wafer, promote the product manufacturing qualification rate.

Description

Gas injector with double sleeve

Technical Field

The utility model relates to a technique of wafer plating, especially a gas injector with double cannula.

Background

As semiconductor technology advances, semiconductor processing technology has become more mature, so that electronic devices composed of more semiconductors can be made more sophisticated and have more functions.

The semiconductor device is processed by photolithography, etching, diffusion and then enters into the formation of the thin film. In the thin film deposition process of a semiconductor wafer, the wafer is placed on a wafer carrying system in a vacuum reaction chamber, so that the gas injector horizontally injects the reaction gas onto the wafer, and the physical or chemical reaction caused by the high temperature above 500 ℃ is utilized to deposit the thin film on the wafer.

The existing gas injector is designed to enable gas source gas to be sprayed out in a horizontal mode in a 360-degree surrounding mode, so that gas flow dead angles are prone to exist during film deposition, for example, the upper edge of the side edge of a wafer is the front end contacting with the gas, so that reactants are particularly prone to being accumulated, and dust is prone to being accumulated after a long time. And the area is the upstream section of the film forming area, once dust is generated, the dust is easily blown to the surface of the whole wafer along with the air flow, so that the chip forms dust particle defects, and the process yield is influenced.

Therefore, in order to clean the dust in the gas injector, a purge gas flow channel is usually additionally arranged on the gas injector to exhaust the gas to clean the dust on the wafer, but the dust with different properties needs to be removed by reacting with different types of etching gases, and at this time, the purge gas flow channel needs to generate different gases according to the properties of the dust. However, if the gas of different properties is replaced, the residual gas particles may be mixed with each other to cause an undesirable chemical reaction without cleaning them up.

In addition, in the deposition process, in order to avoid the gas injector from being affected by high temperature when heating the wafer, a water cooling device is conventionally disposed at the outer edge of the gas injection pipe of the gas injector to reduce the temperature of the gas injector. However, the water cooling device can only cover the outermost gas nozzle and cannot effectively cool the gas nozzle on the inner layer of the gas injector, so that the overall temperature control effect is poor.

In view of the above, the present invention provides a gas injector with double sleeves to overcome the above problems.

SUMMERY OF THE UTILITY MODEL

The utility model discloses a main objective is providing a gas injector with double cannula, and its gas injector head has the purge gas flow channel and can regard as the runner that sweeps or clean etching runner, and the purge gas flow channel is the design of double cannula double gas flow channel, can effectively separate different gas to when avoiding different gaseous sharing same passageways, cause the gas mixture to produce bad chemical reaction.

Another object of the utility model is to provide a gas injector with double cannula, its purge gas flow channel salient in gas injector head bottom, the interior concave structure of the air current recess of collocation board can effectively sweep away the dust and the deposit at wafer edge, promotes the product manufacturing qualification rate.

Another object of the present invention is to provide a gas injector with dual sleeves, which can allow each exhaust pipe to be immersed in the coolant to achieve the effect of controlling the temperature of the entire exhaust pipe.

Another object of the present invention is to provide a gas injector with double-sleeve, which can make the cooling water flow only in a single direction by the arrangement of the partition plate, and can avoid the backflow of the cooling water, so as to greatly improve the cooling efficiency.

To achieve the above object, the present invention provides a gas injector with double sleeves, which comprises a gas injector head, wherein the center of the gas injector head is provided with at least one purge gas flow channel, the purge gas flow channel protrudes from the bottom of the gas injector head, and an inner sleeve is further arranged in the purge gas flow channel.

In this embodiment, the gas injector with dual sleeves further includes a gas flow groove formed on a machine, and a plurality of wafer carrying grooves are further annularly formed around the gas flow groove. The gas jet head is arranged on the air flow groove, the blowing gas flow channel can jet vertical air flow in the air flow groove, and the vertical air flow is converted into horizontal air flow after impacting the air flow groove, so that the horizontal air flow is jetted to the corners of the wafers in the plurality of wafer bearing grooves around.

In this embodiment, the gas injection head further includes an injection housing and a plurality of exhaust pipes, the injection housing is internally provided with a plurality of cooling chambers, the top of the sidewall of each cooling chamber is provided with at least one overflow opening for communicating the adjacent cooling chambers, and the purge gas flow channel is disposed in the innermost cooling chamber. The exhaust pipes are respectively arranged in the cooling chambers, and the openings of the exhaust pipes are exposed out of the jet casing.

In this embodiment, a gas guiding plate is further disposed at the bottom of each cooling chamber, and is perpendicular to the openings of the exhaust pipes to guide the gas discharged from the exhaust pipes, and an overflow space is disposed in the gas guiding plate and communicates with the cooling chamber.

In this embodiment, each cooling chamber is further provided with at least one partition for partitioning the cooling chamber.

In this embodiment, the gas injector further includes an adapter including an input adapter and a shunt adapter. The input joint is provided with a plurality of gas pipes, at least one first liquid conveying pipe and at least one first liquid discharging pipe, and the shunt joint is provided with a plurality of gas flow channels, at least one second liquid conveying pipe and at least one second liquid discharging pipe. The plurality of gas flow channels are respectively communicated with the plurality of gas conveying pipes, and respectively communicated with the purge gas flow channel and the plurality of exhaust pipes so as to input different gases to the purge gas flow channel and the plurality of exhaust pipes; the second liquid conveying pipe is respectively communicated with the first liquid conveying pipe and the innermost layer cooling chamber so as to input cooling liquid; the second liquid discharge pipe is respectively communicated with the first liquid discharge pipe and the outermost layer cooling chamber to discharge cooling liquid.

In this embodiment, a filter is further disposed between the adjacent gas guiding plates.

To sum up, the utility model discloses gas injector head has the purge gas flow channel and can regard as the runner of sweeping or clean etching runner, and the purge gas flow channel is the design of double cannula double-gas flow channel, can effectively separate different gas to when avoiding different gaseous sharing same passageways, cause the gas mixture to produce bad chemical reaction. In addition, the purge gas flow channel salient is in gas injector head bottom to the indent structure of the air current recess of collocation board can effectively sweep away the dust and the deposit at wafer edge, promotes the product and makes the qualification rate, just the utility model discloses a structure can make each blast pipe soak in the coolant liquid, in order to reach the effect of whole blast pipe accuse temperature, and the baffle of crossing that sets up in the cooling chamber can make the cooling water only flow toward single direction, and the cooling water backward flow that can avoid can promote refrigerated efficiency by a wide margin.

For further understanding and appreciation of the structural features and advantages of the invention, reference should be made to the drawings and detailed description thereof, which are illustrated in the accompanying drawings.

Drawings

Fig. 1 is a perspective view of the present invention.

Fig. 2 is an exploded view of the components of the present invention.

Fig. 3 is a schematic cross-sectional view of the present invention.

Fig. 4 is a schematic diagram of the state of the air jet of the exhaust pipe according to the present invention.

Fig. 5 is a schematic diagram of the state of the jet air flow of the purge gas flow passage and the inner sleeve according to the present invention.

Fig. 6 is a schematic diagram of the overflow state of the present invention.

Fig. 7 is a top view of the spray housing in the overflow state of the present invention.

Description of reference numerals: 1-gas injector with double cannula; 10-a machine platform; 12-an airflow groove; 14-a wafer carrying groove; 20-a gas jet head; 22-a spray housing; 24-a cooling chamber; 24 a-a cooling chamber; 24 b-a cooling chamber; 24 c-a cooling chamber; 24 d-a cooling chamber; 240-overflow opening; 240 a-overflow opening; 240 c-overflow opening; 242-gas channeling disk; 242 a-gas tray; 242 c-gas tray; 244-an overflow space; 244 a-an overflow space; 244c — an overflow space; 246-spacer; 26-purge gas flow path; 260-inner sleeve; 28-an exhaust pipe; 30-an adapter; 32-input connector; 320-gas delivery pipe; 320 a-gas delivery pipe; 322-a first infusion tube; 324-a first drain pipe; 34-a tap joint; 340-an airflow channel; 340 a-gas flow channel; 342-an exhaust opening; 342 a-an exhaust opening; 344-a second infusion tube; 346-a second drain; 40-a filter screen; 50-a wafer; 502-corner.

Detailed Description

The utility model discloses a gas injector with double cannula can be used to connect the gaseous output system of film deposition, erupts different gases as the shower nozzle, so carries out the film deposition to the wafer. More importantly, the utility model discloses a gas injector head has the purge gas flow channel and can regard as the runner that sweeps or clean etching runner, and the purge gas flow channel is the design of double cannula double-gas flow channel, can avoid the same passageway of different gaseous sharings, causes gas mixture to produce bad chemical reaction.

Referring to fig. 1 to 3, a structure of a gas injector 1 with a double sleeve is illustrated, in which the gas injector 1 with a double sleeve includes a machine 10 and a gas injector head 20. The machine 10 is provided with an airflow slot 12, and a plurality of wafer carrying slots 14 are formed around the airflow slot 12.

The gas injector 20 is disposed on the air flow groove 12 of the machine 10, and can be correspondingly matched and located in the air flow groove 12. The gas injector head 20 is constructed with an injector housing 22 connected to an adapter 30. the adapter 30 provides a connection to a film deposition gas delivery system (not shown) and a water cooling system (not shown) for delivering the gas and coolant for deposition. The injector housing 22 has a plurality of cooling chambers 24, at least one purge gas flow passage 26 having an inner sleeve 260, and a plurality of exhaust pipes 28. In the present embodiment, the injection housing 22 may be a circular injection housing 22, but the injection housing 22 may also be a square or triangular injection housing 22, and the shape is not limited. In the present embodiment, a plurality of cooling chambers 24 are concentrically arranged in the injection housing 22, and at least one overflow opening 240 is disposed at the top of the sidewall of each adjacent cooling chamber 24 to communicate with the adjacent cooling chambers 24, so that the cooling liquid contained in the cooling chambers 24 can overflow to the adjacent cooling chambers 24, thereby achieving the purpose of connecting the cooling chambers 24 in series.

At least one purge gas flow passage 26 is provided in the center of the jet housing 22, that is, in the innermost cooling chamber 24a, and the purge gas flow passage 26 serves as a common passage for both the purge flow passage and the clean Etching (Cleaning Etching) flow passage. The inner diameter of the purge gas flow passage 26 is less than or equal to four millimeters (mm), the purge gas flow passage 26 may be a metal pipe body with fast heat conduction, such as a copper bar air pipe, and the thickness of the pipe wall of the purge gas flow passage 26 is 2.5 to 0.5 millimeters (mm). Since the purge gas flow passage 26 is made of a material having a high thermal conductivity and a small thickness, the temperature is conducted more quickly, so that the purge gas flow passage 26 can be cooled efficiently by the coolant in the cooling chamber 24. The purge gas flow channel 26 protrudes from the bottom of the jet housing 22 of the gas jet head 20 to jet a vertical gas flow into the gas flow groove 12 of the machine 10, so that the vertical gas flow hits the gas flow groove 12 and is converted into a horizontal gas flow, and the horizontal gas flow is jetted to the corners of the wafers 50 in the wafer carrying grooves 14. It should be noted that an inner sleeve 260 is further disposed in the purge gas flow channel 26, and the inner sleeve 260 can directly pass through the injection housing 22 and the adapter 30 to directly connect to a thin film deposition gas output system (not shown), so that the inner sleeve 260 and the purge gas flow channel 26 are connected to a gas output device in the thin film deposition gas output system different from that of the purge gas flow channel 26 to exhaust the gas different from that of the purge gas flow channel 26. Different kinds of gases can be flowed through the inner and outer sleeves 260 to isolate the different kinds of gases, thereby avoiding adverse chemical reaction caused by gas mixing.

A plurality of exhaust pipes 28 are respectively disposed in the cooling chamber 24, and openings of the exhaust pipes 28 are exposed to the injection housing 22. In this embodiment, the inner diameter of the exhaust pipe 28 is less than or equal to four millimeters (mm), the exhaust pipe 28 can be a metal pipe body with fast heat conduction, such as a copper exhaust pipe, and the thickness of the pipe wall of the exhaust pipe 28 is 2.5 mm (mm) to 0.5 mm (mm). Because the material of blast pipe 28 heat conduction is fast and thickness is thin, makes the temperature conduction faster, makes the coolant liquid in cooling chamber 24 can effectively cool off blast pipe 28, makes the temperature control effect better. With the above-mentioned structure, when the cooling chamber 24 is filled with the cooling liquid, all the exhaust pipes 28 can be immersed in the cooling liquid, so as to achieve the effect of controlling the temperature.

Referring to fig. 1 to 3, in the present embodiment, the injection housing 22 may be a stepped injection housing, such that the length of the sidewall of each cooling chamber 24 gradually increases from the outer circle to the inner circle, and similarly, the length of the exhaust pipe 28 in the cooling chamber 24 also gradually increases according to the sidewall of the cooling chamber 24. Referring to fig. 3, a gas guiding plate 242 is further disposed at the bottom of each cooling chamber 24, the gas guiding plate 242 is vertically connected to the cooling chamber 24, an overflow space 244 is disposed in the gas guiding plate 242, the overflow space 244 is communicated with the cooling chamber 24, and each gas guiding plate 242 is vertically disposed below the openings of the plurality of exhaust pipes 28, since the injection housing 22 is stepped, the gas guiding plate 242 is located just below the exhaust pipes 28 to guide the gas discharged from the exhaust pipes 28, so that the gas discharged from the exhaust pipes 28 can be horizontally injected. And a filter 40 is further disposed between each adjacent gas guiding discs 242, the filter 40 can be a metal filter to block the gas discharged from the gas discharging pipe 28 from forming a gas pressure resistance, and simultaneously, the problem of uneven gas spraying caused by the direct flushing of the sprayed gas can be avoided. In addition, referring to fig. 2, at least one partition 246 is further disposed on a sidewall of each cooling chamber 24 to divide each cooling chamber 24 into two regions, and the partition 246 can prevent the heat-exchanged liquid from flowing freely in the cooling chamber 24 and interfering with the flow direction of the cooling liquid.

Referring to fig. 1 to 3, to illustrate the structure of the adapter 30, the adapter 30 includes an input connector 32 and a shunt connector 34. The input connector 32 is provided with a plurality of air pipes 320, at least one first liquid pipe 322 and at least one first liquid discharging pipe 324, the plurality of air pipes 320 are connected with a film deposition gas output system (not shown), and the first liquid pipe 322 and the first liquid discharging pipe 324 are connected with a water cooling system (not shown). The flow dividing joint 34 is connected to the input joint 32, the input joint 32 is further connected to the injection shell 22, the flow dividing joint 34 is provided with a plurality of air flow channels 340, each air flow channel 340 is respectively communicated with the air pipe 320, the bottom of each air flow channel 340 is further provided with a plurality of exhaust openings 342, the plurality of exhaust openings 342 are respectively communicated with the purge air flow channel 26 and the exhaust pipe 28 on the injection shell 22, so as to input different gases to the purge air flow channel 26 and the exhaust pipe 28; the branch joint 34 further has at least one second liquid pipe 344 connected to the first liquid pipe 322 and the innermost cooling chamber 24a for supplying the cooling liquid, and at least one second liquid pipe 346 connected to the first liquid pipe 324 and the outermost cooling chamber 24b for discharging the cooling liquid.

After the structure of the gas injector 1 with the double-sleeve is described, referring to fig. 4, the purge gas flow path 26 and the exhaust pipe 28 are connected to a film deposition gas output system (not shown) through a plurality of gas pipes 320 of the input connector 32 of the adapter 30, in this embodiment, different gas pipes 320 can be connected to different gas output devices in the film deposition gas output system to output different gases. The gas then flows into the gas flow channel 340 of the flow splitting joint 34, and then flows out to the gas exhaust pipe 28 on the injection housing 22 through the plurality of gas exhaust openings 342 on the gas flow channel 340. Due to the filter screen 40 between the gas guiding discs 242, the gas pressure resistance caused by the gas discharged from the gas discharging pipe 28 can be blocked, and the problem of uneven gas spraying caused by the direct flushing of the sprayed gas can be avoided. In addition, after the gas is discharged from the gas discharge pipe 28, the gas comes into contact with the gas guiding plate 242, so that the gas discharged from the gas discharge pipe 28 can be discharged horizontally.

Referring to fig. 5, after the deposition of the wafer 50 is completed, a film deposition gas output system (not shown) introduces a gas flow or an Etching gas into the purge gas flow channel 26 of the injector housing 22 through the gas pipe 320a of the input connector 32 of the adapter 30 and the plurality of exhaust openings 342a of the gas flow channel 340a of the shunt connector 34, so that the purge gas flow channel 26 ejects a purge gas flow and a clean Etching (Cleaning Etching) gas flow to clean the dust on the wafer 50. Since the purge gas flow channel 26 protrudes from the bottom of the jet housing 22 and the gas guiding plate 242, when the gas flow or the etching gas is exhausted, the gas flow or the etching gas rises along the edge of the gas flow groove 12 in cooperation with the concave structure of the gas flow groove 12 of the machine, so that the gas flow or the etching gas can contact the corner 502 of the wafer 50 in the wafer carrying groove 14, and the dust and the deposit accumulated on the corner 502 of the wafer 50 and the upper surface of the wafer 50 can be effectively removed.

It should be noted that at least one inner sleeve 260 is disposed in the purge gas flow channel 26, in this embodiment, the inner sleeve 260 disposed in the purge gas flow channel 26 can directly pass through the exhaust opening 342a of the branch joint 34 and pass through the gas pipe 320a to directly connect to the thin film deposition gas output system, so that the inner sleeve 260 and the purge gas flow channel 26 are connected to different gas output devices in the thin film deposition gas output system to exhaust different gases. When the gas with different properties needs to be replaced according to the types of the dust and the deposit deposited on the upper surface of the wafer 50, the inner sleeve 260 can be replaced and used for exhausting the gas in the film deposition gas output system, so as to avoid the undesirable chemical reaction caused by the different gases exhausted from the scavenging flow channel 26 being mixed with each other. Since the inner tube 260 is provided in the purge gas flow passage 26, when another gas is output using the inner tube 260, the gas flow purge method is the same as that of the purge gas flow passage 26, and therefore, the description thereof will not be repeated.

Referring to fig. 7, to describe the overflow state of the coolant in the cooling chamber 24 of the gas injector 1 with double-pipe, the coolant flows into the innermost cooling chamber 24a after flowing through the first liquid pipe 322 of the input joint 32 connected to the water cooling system (not shown) through the adapter 30 to the second liquid pipe 344 of the branch joint 34, and the coolant flows only on the half side of the innermost cooling chamber 24a because the innermost cooling chamber 24a is blocked by the partition plate 246, and thus the coolant will not flow into the other half side of the innermost cooling chamber 24a through the overflow space 244a until the coolant enters the overflow space 244a of the gas guide plate 242a communicated with the innermost cooling chamber 24a, and the coolant will overflow into the other half side of the innermost cooling chamber 24a through the overflow opening 240a after the other half side of the innermost cooling chamber 24a is full. Similarly, since the partition 246 is also provided in the cooling chamber 24c, the coolant initially flows only in the half side of the cooling chamber 24c, and when the coolant enters the overflow space 244c of the gas guiding plate 242c communicating with the cooling chamber 24c, the coolant will overflow the other half side of the cooling chamber 24c through the overflow space 244c, and after the other half side of the cooling chamber 24c is full, the coolant will overflow the next cooling chamber 24d through the overflow opening 240 c. Next, each flow method is the same and will not be repeated.

Finally, when the cooling water overflows the outermost cooling chamber 24b, the cooling water flows back to the water cooling system (not shown) through the second drain pipe 346 of the branch joint 34 and the first drain pipe 324 of the input joint 32, so as to achieve the effect of cooling water circulation. In addition, the partition 246 of the present embodiment can make the cooling water flow only in a single direction, so as to prevent the cooling water from flowing back and greatly improve the cooling efficiency.

The foregoing description is intended to be illustrative rather than limiting, and it will be appreciated by those skilled in the art that many modifications, variations or equivalents may be made without departing from the spirit and scope of the invention as defined in the appended claims.

Claims

1. A gas injector with a double sleeve, comprising:

the gas injection head is provided with at least one blowing gas flow channel in the center, the at least one blowing gas flow channel protrudes out of the bottom of the gas injection head, and at least one inner sleeve is arranged in the blowing gas flow channel; and

a machine platform, which is provided with an airflow groove, and a plurality of wafer bearing grooves are arranged around the airflow groove; the blowing gas flow channel of the gas spraying head is positioned above the gas flow groove, and can spray vertical gas flow in the gas flow groove, so that the vertical gas flow is converted into horizontal gas flow after impacting the gas flow groove, and the horizontal gas flow is sprayed to the corners of the wafers in the plurality of wafer bearing grooves.

2. The gas injector with double sleeve of claim 1, wherein the gas injector head further comprises:

a jet shell, in which several layers of cooling chambers are circularly arranged, the top of side wall of every cooling chamber is equipped with at least one overflow opening for communicating adjacent cooling chambers, and the purge gas flow channel is placed in the cooling chamber of innermost layer; and

a plurality of exhaust pipes respectively arranged in the plurality of layers of cooling chambers, and the openings of the exhaust pipes are exposed out of the jet casing.

3. The gas injector with double sleeve of claim 2, wherein the injection housing is a stepped injection housing, such that the length of the sidewall of each cooling chamber gradually increases from the outside to the inside.

4. The gas injector with double sleeve of claim 2, wherein each cooling chamber is further provided with a gas guiding plate at the bottom, the gas guiding plate is perpendicular to the openings of the plurality of exhaust pipes to guide the gas exhausted from the exhaust pipes, and the gas guiding plate is provided with an overflow space therein, and the overflow space is communicated with the cooling chamber.

5. The gas injector with dual shrouds of claim 4, wherein at least one partition is further disposed in each cooling chamber to separate the cooling chambers.

6. A gas injector with dual cannulae as claimed in claim 2 wherein the gas injector head further comprises an adapter coupled to the injector housing, the adapter comprising:

an input joint, on which a plurality of gas pipes, at least one first liquid conveying pipe and at least one first liquid discharging pipe are arranged; and

a shunt joint connected with the input joint, wherein the shunt joint is provided with a plurality of airflow channels, at least one second liquid conveying pipe and at least one second liquid discharging pipe, the airflow channels are respectively communicated with the gas conveying pipes and the purge airflow channel and the exhaust pipes so as to input different gases to the purge airflow channel and the exhaust pipes; the second liquid conveying pipe is respectively communicated with the first liquid conveying pipe and the innermost layer of the cooling chamber so as to input cooling liquid; the second liquid discharge pipe is respectively communicated with the first liquid discharge pipe and the cooling chamber on the outermost layer to discharge the cooling liquid.

7. The gas injector with double sleeve of claim 6, wherein the plurality of gas flow passages are further provided with a plurality of exhaust openings, and the plurality of exhaust openings are respectively communicated with the plurality of exhaust pipes.

8. The gas injector with double sleeve of claim 1, wherein the purge gas flow passage inner diameter is less than or equal to four millimeters, and the purge gas flow passage wall thickness is 2.5 millimeters to 0.5 millimeters.

9. The gas injector with dual cannulae of claim 2, wherein the exhaust tube inner diameter is less than or equal to four millimeters and the exhaust tube wall thickness is between 2.5 millimeters and 0.5 millimeters.

10. The gas injector with double sleeve of claim 4, wherein a screen is provided between adjacent gas guiding disks.