TW202138610A - Multi-channel gas ejector with serially-connected cooling chambers capable of effectively removing dust and deposits on the edge of the wafer and improving the product manufacturing yield - Google Patents

Multi-channel gas ejector with serially-connected cooling chambers capable of effectively removing dust and deposits on the edge of the wafer and improving the product manufacturing yield Download PDF

Info

Publication number
TW202138610A
TW202138610A TW109112379A TW109112379A TW202138610A TW 202138610 A TW202138610 A TW 202138610A TW 109112379 A TW109112379 A TW 109112379A TW 109112379 A TW109112379 A TW 109112379A TW 202138610 A TW202138610 A TW 202138610A
Authority
TW
Taiwan
Prior art keywords
cooling
cooling chamber
gas
pipe
exhaust
Prior art date
Application number
TW109112379A
Other languages
Chinese (zh)
Other versions
TWI749521B (en
Inventor
吳銘欽
劉峰
Original Assignee
大陸商蘇州雨竹機電有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大陸商蘇州雨竹機電有限公司 filed Critical 大陸商蘇州雨竹機電有限公司
Priority to TW109112379A priority Critical patent/TWI749521B/en
Priority to CN202022411353.4U priority patent/CN215560652U/en
Priority to CN202022423919.5U priority patent/CN214106268U/en
Priority to CN202022423997.5U priority patent/CN214327877U/en
Priority to CN202022427120.3U priority patent/CN214218854U/en
Priority to CN202011160181.6A priority patent/CN112410761A/en
Publication of TW202138610A publication Critical patent/TW202138610A/en
Application granted granted Critical
Publication of TWI749521B publication Critical patent/TWI749521B/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45578Elongated nozzles, tubes with holes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45572Cooled nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The present invention relates to a multi-channel gas ejector with serially-connected cooling chambers, which includes a jet housing internally provided with plural layers of cooling chambers. At least one overflow opening is provided on a top portion of a side wall of each cooling chamber to communicate with adjacent cooling chambers. Each cooling chamber is internally provided with a plurality of exhaust pipes, and the openings of the exhaust pipes are exposed outside the jet housing. The present invention can immerse each exhaust pipe in the cooling liquid to achieve the effect of overall exhaust pipe temperature control. The exhaust pipes protrude from the bottom of the multi-channel gas ejector with the serially-connected cooling chambers to be matched with recessed structures of a susceptor, so as to effectively remove dust and deposits on the edge of the wafer and improve the product manufacturing yield.

Description

具串聯式冷卻室之多流道氣體噴射器Multi-channel gas ejector with series cooling chamber

本發明係有關一種晶圓鍍覆之技術,特別是指一種具串聯式冷卻室之多流道氣體噴射器。The present invention relates to a wafer plating technology, in particular to a multi-channel gas injector with a series cooling chamber.

隨著半導體技術的發展,半導體製程技術也變得更加成熟,使得更多半導體組成的電子裝置可被做的更佳精巧,功能變得更多。With the development of semiconductor technology, semiconductor process technology has become more mature, so that electronic devices composed of more semiconductors can be made more sophisticated and more functional.

半導體技術的製程會經過黃光、蝕刻、擴散再進入到薄膜的生成。半導體晶圓在薄膜沉積製程中,係將晶圓設置在真空反應腔內,以利用氣體噴射器將反應的氣體水平噴射至晶圓上,以利用加熱引起的物理或化學反應,從而在晶圓上沉積薄膜。The process of semiconductor technology will go through yellow light, etching, diffusion and then enter the formation of thin films. In the thin film deposition process of semiconductor wafers, the wafers are placed in a vacuum reaction chamber to inject the reacted gas onto the wafers horizontally by a gas injector, so as to utilize the physical or chemical reaction caused by heating, so that the wafer Deposit a thin film on it.

在沉積的過程中,為避免對晶圓加熱時,氣體噴射器受高溫的影響,過去會在氣體噴射器的噴氣管外緣設置水冷設備,以降低氣體噴射器的溫度。但這種方式水冷設備僅能包覆到最外層的噴氣管,並無法有效冷卻氣體噴射器內層的噴氣管,造成整體控溫效果不佳。During the deposition process, in order to prevent the gas injector from being affected by high temperatures when heating the wafer, in the past, a water-cooling device was installed on the outer edge of the gas injection tube of the gas injector to reduce the temperature of the gas injector. However, the water-cooling equipment in this way can only cover the outermost jet tube, and cannot effectively cool the jet tube in the inner layer of the gas ejector, resulting in poor overall temperature control effect.

除此之外,目前的噴射器的設計係令氣源氣體以水平的方式360度環繞噴出,因此在沉積薄膜時易具有氣流死角,如晶圓的側邊上緣為接觸氣體的前端,因此特別容易積生反應物,時間一久容易有粉塵堆積。且此區為薄膜成膜區的氣上游區段,一但有粉塵生成,粉塵就容易隨著氣流吹散到整片晶圓表面,令晶片形成粉塵顆粒缺陷,影響到製程良率。In addition, the current ejector design makes the gas source gas to be sprayed around 360 degrees in a horizontal manner, so it is easy to have a dead angle when depositing a thin film. For example, the upper edge of the side edge of the wafer is the front end that contacts the gas. It is especially easy to accumulate reactants, and dust is easy to accumulate over time. And this area is the gas upstream section of the film formation area. Once dust is generated, the dust is easily blown to the surface of the entire wafer along with the airflow, causing the wafer to form dust particle defects, which affects the process yield.

有鑑於此,本發明遂針對上述習知技術之缺失,提出一種具串聯式冷卻室之多流道氣體噴射器,以有效克服上述之該等問題。In view of this, the present invention addresses the shortcomings of the above-mentioned conventional technology and proposes a multi-channel gas ejector with a series-type cooling chamber to effectively overcome the above-mentioned problems.

本發明之主要目的在提供一種具串聯式冷卻室之多流道氣體噴射器,其可令每一排氣管浸泡於冷卻液中,以達到整體排氣管控溫的效果。The main purpose of the present invention is to provide a multi-channel gas injector with a series cooling chamber, which can make each exhaust pipe immerse in the cooling liquid to achieve the effect of controlling the temperature of the entire exhaust pipe.

本發明之另一目的在提供一種具串聯式冷卻室之多流道氣體噴射器,其具有共用氣流通道可作為吹掃流道或清潔蝕刻流道,且該氣流通道突出於串聯式冷卻室之多流道氣體噴射器底部,搭配晶座(susceptor)的內凹結構,能有效掃除晶圓邊緣的粉塵及沉積物,提升產品製造良率。Another object of the present invention is to provide a multi-channel gas injector with a series cooling chamber, which has a common air flow channel that can be used as a purge channel or a clean etching channel, and the air flow channel protrudes from the series cooling chamber The bottom of the multi-channel gas injector, with the concave structure of the susceptor, can effectively sweep dust and deposits on the edge of the wafer and improve the product manufacturing yield.

本發明之再一目的在提供一種具串聯式冷卻室之多流道氣體噴射器,其透過隔板的設置可令冷卻水只往單一方向流動,能避免的冷卻水回流,能大幅提升冷卻的功效。Another object of the present invention is to provide a multi-channel gas ejector with a series cooling chamber, which can make cooling water flow only in a single direction through the arrangement of partitions, which can avoid the reflux of cooling water, and can greatly improve the cooling performance. effect.

為達上述之目的,本發明提供一種具串聯式冷卻室之多流道氣體噴射器,包括一噴射殼體內部環設有複數層冷卻室,每一冷卻室之側壁頂部設有至少一溢流開口,以連通相鄰之冷卻室,且每一冷卻室內分別設有複數排氣管,每一排氣管之開口外露於噴射殼體外。In order to achieve the above-mentioned object, the present invention provides a multi-channel gas ejector with series cooling chambers, which includes a spray shell with a plurality of cooling chambers around the inner ring, and at least one overflow is provided on the top of the side wall of each cooling chamber An opening is used to communicate with adjacent cooling chambers, and a plurality of exhaust pipes are respectively arranged in each cooling chamber, and the opening of each exhaust pipe is exposed outside the spray casing.

在本實施例中,噴射殼體可為階梯狀噴射殼體,令每一冷卻室之側壁的長度由內往外逐漸增長。In this embodiment, the spray casing can be a stepped spray casing, so that the length of the side wall of each cooling chamber gradually increases from the inside to the outside.

在本實施例中,每一冷卻室底部更設有一氣體引流盤,垂直於複數排氣管之開口,以引流排氣管排出之氣體,且氣體引流盤內具溢流空間,溢流空間連通冷卻室。In this embodiment, the bottom of each cooling chamber is further provided with a gas drainage plate, perpendicular to the openings of the plurality of exhaust pipes to guide the gas discharged from the exhaust pipes, and there is an overflow space in the gas drainage plate, and the overflow space is connected Cooling room.

在本實施例中,其中每一冷卻室中更設有至少一隔板,以分隔冷卻室。In this embodiment, each of the cooling chambers is further provided with at least one partition to separate the cooling chambers.

在本實施例中,複數排氣管包括一共用排氣管設置於噴射殼體中央,且共用排氣管穿出噴射殼體。In this embodiment, the plurality of exhaust pipes includes a common exhaust pipe arranged in the center of the injection housing, and the common exhaust pipe passes through the injection housing.

在本實施例中,具串聯式冷卻室之氣體噴射器更包括一轉接頭,轉接頭包括一輸入接頭及一分流接頭,輸入接頭上設有複數輸氣管、至少一第一輸液管及至少一第一排液管。分流接頭上則設有複數氣流通道、至少一第二輸液管及至少一第二排液管,複數氣流通道分別連通輸氣管,及連通複數排氣管,以輸入不同氣體至複數排氣管;第二輸液管分別連通第一輸液管及最內層冷卻室,以輸入冷卻液;第二排液管分別連通第一排液管及最外層冷卻室,以排出冷卻液。In this embodiment, the gas injector with a series cooling chamber further includes an adapter. The adapter includes an input connector and a branch connector. The input connector is provided with a plurality of gas pipes, at least one first liquid pipe, and At least one first drain pipe. The branch joint is provided with a plurality of air flow channels, at least one second liquid infusion pipe and at least one second liquid discharge tube. The plurality of air flow channels are respectively connected with the air pipe and with a plurality of exhaust pipes to input different gases to the plurality of exhaust pipes; The second liquid infusion pipe is respectively connected with the first liquid pipe and the innermost cooling chamber to input the cooling liquid; the second liquid discharge pipe is respectively connected with the first liquid discharge pipe and the outermost cooling chamber to discharge the cooling liquid.

在本實施例中,每一氣體引流盤之間更設有一濾網。In this embodiment, a filter screen is further provided between each gas drainage plate.

底下藉由具體實施例詳加說明,當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。Detailed descriptions are given below by specific embodiments, so that it will be easier to understand the purpose, technical content, features, and effects of the present invention.

本發明之具串聯式冷卻室之多流道氣體噴射器,可用以連接薄膜沉積氣體輸出系統,以作為噴頭噴射出不同的氣體,藉此對晶圓進行薄膜沉積,更重要的是,具串聯式冷卻室之多流道氣體噴射器的特殊結構設計,可令每一排氣管浸泡於冷卻液中,以達到整體排氣管控溫的效果。The multi-channel gas injector with a series cooling chamber of the present invention can be used to connect a thin film deposition gas output system to be used as a nozzle to spray different gases to deposit thin films on wafers. More importantly, it has a series connection The special structure design of the multi-channel gas injector in the cooling chamber can make each exhaust pipe immerse in the coolant to achieve the effect of overall exhaust pipe temperature control.

請參照第一圖至第三圖,具串聯式冷卻室之多流道氣體噴射器1,包括一噴射殼體10連接一轉接頭20。在本實施例中,噴射殼體10為圓形的噴射殼體,當然噴射殼體亦可為方形或三角形噴射殼體,形狀並不予以限制。在本實施例中,噴射殼體10內以同心圓的方式環設有複數層冷卻室12,每一冷卻室12之側壁頂部設有至少一溢流開口120,以連通相鄰之冷卻室12,使冷卻室12內容置的冷卻液可溢流至相鄰的冷卻室12中,達到串聯冷卻室12的目的。噴射殼體10中更設有複數排氣管14分別設置在每一冷卻室12內,且排氣管14之開口係外露於噴射殼體外10;透過上述結構的設置,當冷卻室12內填滿冷卻液時,所有的排氣管14皆能浸泡在冷卻液中,以達到控溫的效果。轉接頭20則係提供具串聯式冷卻室之多流道氣體噴射器1連接薄膜沉積氣體輸出系統(圖中未示)及水冷系統(圖中未示)連接,以提供具串聯式冷卻室之多流道氣體噴射器1噴射沉積的氣體及冷卻液。Please refer to the first to third figures, the multi-channel gas injector 1 with a series cooling chamber includes an injection housing 10 connected to an adapter 20. In this embodiment, the spray casing 10 is a circular spray casing. Of course, the spray casing can also be a square or triangular spray casing, and the shape is not limited. In this embodiment, a plurality of cooling chambers 12 are ringed in the spray housing 10 in a concentric manner, and at least one overflow opening 120 is provided on the top of the side wall of each cooling chamber 12 to communicate with adjacent cooling chambers 12 , So that the cooling liquid contained in the cooling chamber 12 can overflow into the adjacent cooling chamber 12 to achieve the purpose of connecting the cooling chambers 12 in series. The injection casing 10 is further provided with a plurality of exhaust pipes 14 respectively arranged in each cooling chamber 12, and the opening of the exhaust pipe 14 is exposed outside the injection casing 10; through the arrangement of the above structure, when the cooling chamber 12 is filled When the coolant is full, all the exhaust pipes 14 can be immersed in the coolant to achieve the effect of temperature control. The adapter 20 provides a multi-channel gas injector 1 with a series cooling chamber to connect the film deposition gas output system (not shown in the figure) and the water cooling system (not shown in the figure) to provide a series cooling chamber. The multi-channel gas injector 1 sprays deposited gas and cooling liquid.

請持續參照第一圖至第三圖,以詳細說明噴射殼體10及轉接頭20之結構。在本實施例中,噴射殼體10可為階梯狀噴射殼體,令每一冷卻室12之側壁的長度由外圈往內圈逐漸增長,同理冷卻室12內的排氣管14長度亦根據冷卻室12之側壁逐漸增長。請參照第三圖,每一冷卻室12底部更設有一氣體引流盤122,氣體引流盤122垂直連接冷卻室12設置,氣體引流盤122內具溢流空間124,溢流空間124連通冷卻室12,且每一氣體引流盤122的垂直設置於複數排氣管14之開口下方,由於噴射殼體10呈階梯狀,因此氣體引流盤122會剛好位於排氣管14的下方,以可作為引流排氣管14排出之氣體,使排氣管14噴出的氣體可以水平的方式噴出。請參照第二圖,每一冷卻室12之側壁上更設有至少一隔板16,以將每一冷卻室12分隔成兩塊區域,藉由隔板16能避免熱交換的液體在冷卻室12中任意流動,而干擾冷卻液的流向。Please continue to refer to the first to third figures to describe the structure of the spray housing 10 and the adapter 20 in detail. In this embodiment, the injection housing 10 can be a stepped injection housing, so that the length of the side wall of each cooling chamber 12 gradually increases from the outer ring to the inner ring, and the length of the exhaust pipe 14 in the cooling chamber 12 is also the same. According to the side wall of the cooling chamber 12 gradually grows. Please refer to the third figure, the bottom of each cooling chamber 12 is further provided with a gas drainage plate 122, the gas drainage plate 122 is vertically connected to the cooling chamber 12, the gas drainage plate 122 has an overflow space 124, the overflow space 124 is connected to the cooling chamber 12 , And each gas guide plate 122 is vertically arranged below the opening of the plurality of exhaust pipes 14. Since the jet housing 10 is stepped, the gas guide plate 122 will be located just below the exhaust pipe 14, so that it can be used as a drain The gas exhausted from the air pipe 14 allows the gas ejected from the exhaust pipe 14 to be ejected in a horizontal manner. Please refer to the second figure. At least one partition 16 is provided on the side wall of each cooling chamber 12 to divide each cooling chamber 12 into two areas. The partition 16 can prevent the heat exchange liquid from being in the cooling chamber. 12 flows randomly, and interferes with the flow direction of the cooling liquid.

持續參照第一圖至第三圖,以接著敘述噴射殼體10之排氣管14結構,在本實施例中,排氣管14的內徑至少四公厘(mm),排氣管14可為導熱快速的金屬管體,如銅排氣管等,且排氣管14之管壁的厚度為2.5公厘(mm)至0.5公厘(mm)。由於排氣管14之材質導熱快且厚度薄,使溫度傳導更快,令冷卻室12中的冷卻液能有效冷卻排氣管14,使控溫效果更好。請參照第三圖,在本實施例中,每一氣體引流盤122之間更設有一濾網18,濾網18可為金屬濾網,以阻擋由排氣管14排出之氣體形成氣體壓阻,同時可避免噴出的氣體直接衝出,造成噴氣不均勻問題。在本實施例中,複數排氣管14中包括有一共用排氣管140設置於噴射殼體10中央,共用排氣管14穿出噴射殼體10底部,以作為掃流道與清潔刻蝕(Cleaning Etching)流道的共用通道。Continue to refer to the first to third figures to describe the structure of the exhaust pipe 14 of the injection housing 10. In this embodiment, the inner diameter of the exhaust pipe 14 is at least four millimeters (mm), and the exhaust pipe 14 can be It is a metal pipe body with fast heat conduction, such as a copper exhaust pipe, and the thickness of the pipe wall of the exhaust pipe 14 is 2.5 mm to 0.5 mm. Since the material of the exhaust pipe 14 conducts heat quickly and is thin in thickness, the temperature conduction is faster, so that the cooling liquid in the cooling chamber 12 can effectively cool the exhaust pipe 14, so that the temperature control effect is better. Please refer to the third figure. In this embodiment, a filter screen 18 is further provided between each gas drainage plate 122. The filter screen 18 can be a metal filter screen to block the gas discharged from the exhaust pipe 14 from forming a gas pressure resistance. , At the same time, it can prevent the jetted gas from directly rushing out, causing uneven jetting problems. In this embodiment, the plurality of exhaust pipes 14 includes a common exhaust pipe 140 disposed in the center of the injection housing 10, and the common exhaust pipe 14 penetrates the bottom of the injection housing 10 to serve as a sweeping channel and cleaning etching ( Cleaning Etching) The common channel of the runner.

請持續第一圖至第三圖,接著詳細說明轉接頭20之結構,轉接頭20包括一輸入接頭22及一分流接頭24。輸入接頭22上設有複數輸氣管220、至少一第一輸液管222及至少一第一排液管224,複數輸氣管220連接薄膜沉積氣體輸出系統(圖中未示),第一輸液管222及第一排液管224則連接水冷系統(圖中未示)。分流接頭24連接輸入接頭22設置,分流接頭24上設有複數氣流通道240,每一氣流通道240分別連通輸氣管220,且每一排氣流通道240底部更設有複數排氣開口242,複數排氣開口242分別連通噴射殼體10上的排氣管14,以輸入不同氣體至複數排氣管14;分流接頭24上更設有至少一第二輸液管244分別連通第一輸液管222及最內層冷卻室12a,以輸入冷卻液,以及至少一第二排液管246分別連通第一排液管224及最外層冷卻室12b,以排出冷卻液。Please continue from the first to third figures, and then describe the structure of the adapter 20 in detail. The adapter 20 includes an input connector 22 and a branch connector 24. The input connector 22 is provided with a plurality of gas transmission pipes 220, at least one first liquid transmission pipe 222, and at least one first discharge pipe 224. The plurality of gas transmission pipes 220 are connected to a thin film deposition gas output system (not shown), and the first liquid transmission pipe 222 And the first drain pipe 224 is connected to a water cooling system (not shown in the figure). The shunt connector 24 is connected to the input connector 22. The shunt connector 24 is provided with a plurality of airflow channels 240. Each airflow channel 240 is respectively connected to the air pipe 220, and the bottom of each exhaust airflow channel 240 is further provided with a plurality of exhaust openings 242. The exhaust openings 242 are respectively connected to the exhaust pipe 14 on the jet housing 10 to input different gases to the plurality of exhaust pipes 14; at least one second infusion pipe 244 is further provided on the branch joint 24 to respectively communicate with the first infusion pipe 222 and The innermost cooling chamber 12a is used to input the cooling liquid, and at least one second drain pipe 246 is respectively connected to the first drain pipe 224 and the outermost cooling chamber 12b to discharge the cooling liquid.

在說明完具串聯式冷卻室之多流道氣體噴射器1,接下來請配合參照第四圖與第五圖,以說明串聯式冷卻室之多流道氣體噴射器1之冷卻室12中冷卻液的溢流狀態,首先冷卻液經由轉接頭20連接水冷系統(圖中未示)之輸入接頭22的第一輸液管222流通至分流接頭24的第二輸液管244後流入最內層冷卻室12a,由於最內層冷卻室12a中具有隔板16阻隔,因此冷卻液一開始僅在最內層冷卻室12a半側流動,直到冷卻液進入連通最內層冷卻室12a的氣體引流盤122a的溢流空間124a時,冷卻液才會經由溢流空間124a溢滿到最內層冷卻室12a的另一半側,最內層冷卻室12a另一半側溢滿後,會透過溢流開口120a溢出至另一層冷卻室12c。同理,因冷卻室12c內亦設有隔板16,冷卻液一開始僅在冷卻室12c半側流動,直到冷卻液進入連通冷卻室12c的氣體引流盤122c的溢流空間124c時,冷卻液才會經由溢流空間124c溢滿到冷卻室12c的另一半側,冷卻室12c另一半側溢滿後,會透過溢流開口120c溢出至下一層冷卻室12d。接下來每一層流動方法皆相同故不重複敘述。After describing the multi-channel gas ejector 1 with a series cooling chamber, please refer to the fourth and fifth figures together to illustrate the cooling in the cooling chamber 12 of the multi-channel gas ejector 1 of the series cooling chamber. In the overflow state of the liquid, the first infusion tube 222 of the input connector 22 of the water cooling system (not shown) is connected to the first infusion tube 222 of the water cooling system (not shown) through the adapter 20, flows to the second infusion tube 244 of the branch connector 24, and then flows into the innermost layer for cooling In the chamber 12a, since the innermost cooling chamber 12a is blocked by a partition plate 16, the cooling liquid only flows on the half side of the innermost cooling chamber 12a at first, until the cooling liquid enters the gas guide plate 122a connected to the innermost cooling chamber 12a The cooling liquid will overflow to the other half of the innermost cooling chamber 12a through the overflow space 124a. After the other half of the innermost cooling chamber 12a overflows, it will overflow through the overflow opening 120a To another cooling chamber 12c. In the same way, because the partition 16 is also provided in the cooling chamber 12c, the cooling liquid only flows on the half side of the cooling chamber 12c at first, until the cooling liquid enters the overflow space 124c of the gas guide plate 122c connected to the cooling chamber 12c, the cooling liquid It will overflow to the other half of the cooling chamber 12c through the overflow space 124c. After the other half of the cooling chamber 12c overflows, it will overflow through the overflow opening 120c to the next cooling chamber 12d. The flow method of each layer is the same in the following, so the description will not be repeated.

最終當冷卻水溢滿最外層冷卻室12b時,冷卻水則由分流接頭24之第二排液管246,並經由輸入接頭22之第一排液管224流回水冷系統(圖中未示)中,以達到冷卻水循環的效果。當然亦可設置兩組輸輸液管與排液管,以在噴射殼體10內設置兩組以上的串聯式冷卻室,在此並不予以限制。且本實施例透過隔板16的設置可令冷卻水只往單一方向流動,能避免冷卻水回流,能大幅提升冷卻的功效。Finally, when the cooling water overflows the outermost cooling chamber 12b, the cooling water flows back to the water cooling system through the second drain pipe 246 of the branch connector 24 and the first drain pipe 224 of the input connector 22 (not shown) In order to achieve the effect of cooling water circulation. Of course, two sets of infusion pipes and drain pipes can also be provided, so that more than two sets of series-type cooling chambers are arranged in the spray housing 10, which is not limited here. Moreover, in this embodiment, the arrangement of the partition plate 16 can make the cooling water flow only in a single direction, which can avoid the reflux of the cooling water, and can greatly improve the cooling effect.

接下來請參照第六圖,以說明氣體的排出方式,透過轉接頭20之輸入接頭22的複數輸氣管220連接薄膜沉積氣體輸出系統(圖中未示),在本實施例中,不同的輸氣管220可供連接薄膜沉積氣體輸出系統中不同的氣體輸出器,以輸出不同的氣體。接著氣體流入分流接頭24的氣流通道240後,再經由氣流通道240上的複數排氣開口242流出至噴射殼體10上的排氣管14。由於氣體引流盤122之間具有濾網18,可阻擋由排氣管14排出之氣體形成氣體壓阻,同時可避免噴出的氣體直接衝出,造成噴氣不均勻問題。除此之外,氣體由排氣管14排出後,會接觸到氣體引流盤122,使排氣管14噴出的氣體可以水平的方式噴出。Next, please refer to Figure 6 to illustrate how the gas is discharged. The multiple gas pipes 220 of the input connector 22 of the adapter 20 are connected to the film deposition gas output system (not shown in the figure). In this embodiment, different The gas pipe 220 can be used to connect different gas output devices in the thin film deposition gas output system to output different gases. Then, the gas flows into the air flow channel 240 of the branch joint 24, and then flows out to the exhaust pipe 14 on the jet housing 10 through the plurality of exhaust openings 242 on the air flow channel 240. Since the filter screen 18 is provided between the gas guide plates 122, the gas discharged from the exhaust pipe 14 can be prevented from forming a gas pressure resistance, and the sprayed gas can be prevented from directly rushing out, causing the problem of uneven spraying. In addition, after the gas is discharged from the exhaust pipe 14, it will contact the gas guide plate 122, so that the gas ejected from the exhaust pipe 14 can be ejected in a horizontal manner.

複數排氣管14中具有一共用排氣管140的設置,共用氣流通道140可作為吹掃流道或清潔蝕刻流道,共用排氣管140連通薄膜沉積氣體輸出系統(圖中未示),以導入蝕刻氣體,如氯化氫或氯氣等。由於共用氣流通道140突出於串聯式冷卻室之噴射殼體10及氣體引流盤122的底部,因此當蝕刻氣體排出時,搭配晶座30(susceptor)的晶圓凹座32內凹結構,蝕刻氣體會沿著晶圓凹座32的邊緣上升,令蝕刻氣體的氣流能接觸到晶圓34邊角,能有效掃除晶圓邊緣堆積的粉塵及沉積物。除此之外,共用排氣管140內更可供設有一內套管142,內套管142內的氣體可與內套管142外的氣體分離,避免不同氣體混合,產生化學反應。The plurality of exhaust pipes 14 are provided with a common exhaust pipe 140, the common air flow channel 140 can be used as a purge flow channel or a clean etching flow channel, and the common exhaust pipe 140 is connected to the thin film deposition gas output system (not shown in the figure), To introduce etching gas, such as hydrogen chloride or chlorine. Since the common air flow channel 140 protrudes from the bottom of the jet housing 10 and the gas drainage plate 122 of the tandem cooling chamber, when the etching gas is discharged, it is matched with the recessed structure of the wafer recess 32 of the susceptor 30, and the etching gas It will rise along the edge of the wafer recess 32, so that the gas flow of the etching gas can contact the corners of the wafer 34, which can effectively remove the dust and deposits accumulated on the edge of the wafer. In addition, an inner sleeve 142 can be provided in the common exhaust pipe 140, and the gas in the inner sleeve 142 can be separated from the gas outside the inner sleeve 142 to prevent different gases from mixing and causing chemical reactions.

綜上所述,本發明可令每一排氣管浸泡於冷卻液中,達到整體排氣管控溫的效果,且透過隔板的設置可令冷卻水只往單一方向流動,能避免的冷卻水回流,以大幅提升冷卻的功效。且本發明排氣管中具有共用氣流通道,可作為吹掃流道或清潔蝕刻流道,且氣流通道突出於串聯式冷卻室之多流道氣體噴射器底部,搭配晶座(susceptor)的內凹結構,能有效掃除晶圓邊緣的粉塵及沉積物,提升產品製造良率。In summary, the present invention can make each exhaust pipe soak in the cooling liquid to achieve the effect of overall exhaust pipe temperature control, and the arrangement of the partition can make the cooling water flow only in a single direction, which can avoid cooling The water returns to greatly enhance the cooling effect. In addition, the exhaust pipe of the present invention has a common air flow channel, which can be used as a purge channel or a clean etching channel. The concave structure can effectively remove dust and deposits on the edge of the wafer and improve the product manufacturing yield.

唯以上所述者,僅為本發明之較佳實施例而已,並非用來限定本發明實施之範圍。故即凡依本發明申請範圍所述之特徵及精神所為之均等變化或修飾,均應包括於本發明之申請專利範圍內。Only the above are only preferred embodiments of the present invention and are not used to limit the scope of implementation of the present invention. Therefore, all equivalent changes or modifications made in accordance with the characteristics and spirit of the application scope of the present invention should be included in the patent application scope of the present invention.

1:具串聯式冷卻室之多流道氣體噴射器 10:噴射殼體 12:冷卻室 12a:最內層冷卻室 12b:最外層冷卻室 12c:冷卻室 12d:冷卻室 120:溢流開口 120a:溢流開口 120c:溢流開口 122:氣體引流盤 122a:氣體引流盤 122c:氣體引流盤 124:溢流空間 124a:溢流空間 124c:溢流空間 14:排氣管 140:共用排氣管 142:內套管 16:隔板 18:濾網 20:轉接頭 22:輸入接頭 220:輸氣管 222:第一輸液管 224:第一排液管 24:分流接頭 240:氣流通道 242:排氣開口 244:第二輸液管 246:第二排液管 30:晶座 32:晶圓凹座 34:晶圓1: Multi-channel gas ejector with series cooling chamber 10: Jet shell 12: Cooling room 12a: The innermost cooling chamber 12b: Outermost cooling chamber 12c: Cooling room 12d: cooling room 120: Overflow opening 120a: overflow opening 120c: overflow opening 122: gas drainage plate 122a: gas drainage plate 122c: gas drainage plate 124: Overflow Space 124a: overflow space 124c: overflow space 14: Exhaust pipe 140: Shared exhaust pipe 142: inner casing 16: partition 18: Filter 20: Adapter 22: Input connector 220: gas pipe 222: The first infusion tube 224: First drain pipe 24: Shunt connector 240: Airflow channel 242: Exhaust opening 244: second infusion tube 246: second drain pipe 30: Crystal seat 32: Wafer recess 34: Wafer

第一圖係為本發明之立體圖。 第二圖係為本發明之元件分解圖。 第三圖係為本發明之剖面側視圖。 第四圖係為本發明之溢流狀態面示意圖。 第五圖係為本發明溢流狀態之噴射殼體俯面示意圖。 第六圖係為本發明之氣流狀態側面示意圖。The first figure is a three-dimensional view of the present invention. The second figure is an exploded view of the components of the present invention. The third figure is a cross-sectional side view of the present invention. The fourth figure is a schematic diagram of the overflow state of the present invention. The fifth figure is a schematic diagram of the top view of the spray housing in the overflow state of the present invention. The sixth figure is a schematic side view of the air flow state of the present invention.

1:具串聯式冷卻室之多流道氣體噴射器1: Multi-channel gas ejector with series cooling chamber

10:噴射殼體10: Jet shell

12:冷卻室12: Cooling room

12a:最內層冷卻室12a: The innermost cooling chamber

12b:最外層冷卻室12b: Outermost cooling chamber

120:溢流開口120: Overflow opening

122:氣體引流盤122: gas drainage plate

14:排氣管14: Exhaust pipe

140:共用排氣管140: Shared exhaust pipe

16:隔板16: partition

20:轉接頭20: Adapter

22:輸入接頭22: Input connector

220:輸氣管220: gas pipe

222:第一輸液管222: The first infusion tube

224:第一排液管224: First drain pipe

24:分流接頭24: Shunt connector

240:氣流通道240: Airflow channel

242:排氣開口242: Exhaust opening

244:第二輸液管244: second infusion tube

246:第二排液管246: second drain pipe

Claims (10)

一種具串聯式冷卻室之多流道氣體噴射器,包括: 一噴射殼體,其內部環設有複數層冷卻室,每一該冷卻室之側壁頂部設有至少一溢流開口,以連通相鄰之冷卻室;以及 複數排氣管,設置在每一該冷卻室內,且該排氣管之開口外露於該噴射殼體外。A multi-channel gas ejector with a series cooling chamber, comprising: A spray shell, the inner ring of which is provided with a plurality of layers of cooling chambers, and the top of the side wall of each of the cooling chambers is provided with at least one overflow opening to communicate with adjacent cooling chambers; and A plurality of exhaust pipes are arranged in each cooling chamber, and the opening of the exhaust pipe is exposed outside the injection casing. 如請求項1所述之具串聯式冷卻室之多流道氣體噴射器,其中該噴射殼體為階梯狀噴射殼體,令每一該冷卻室之該側壁的長度由外往內逐漸增長。The multi-channel gas injector with tandem cooling chambers according to claim 1, wherein the spray shell is a stepped spray shell, so that the length of the side wall of each cooling chamber gradually increases from the outside to the inside. 如請求項1所述之具串聯式冷卻室之多流道氣體噴射器,其中每一該冷卻室底部更設有一氣體引流盤,垂直於該等排氣管之開口,以引流該排氣管排出之氣體,且該氣體引流盤內具一溢流空間,該溢流空間連通該冷卻室。The multi-channel gas ejector with tandem cooling chambers according to claim 1, wherein a gas drainage plate is further provided at the bottom of each cooling chamber, which is perpendicular to the openings of the exhaust pipes to guide the exhaust pipes The discharged gas has an overflow space in the gas guide plate, and the overflow space is connected to the cooling chamber. 如請求項3所述之具串聯式冷卻室之多流道氣體噴射器,其中每一該冷卻室中更設有至少一隔板,以分隔該冷卻室。According to claim 3, the multi-channel gas ejector with serial cooling chambers, wherein each cooling chamber is further provided with at least one partition to separate the cooling chambers. 如請求項1所述之具串聯式冷卻室之多流道氣體噴射器,其中該等排氣管包括一共用排氣管,設置於該噴射殼體中央,且該共用排氣管穿出該噴射殼體底部。The multi-channel gas injector with a series cooling chamber according to claim 1, wherein the exhaust pipes include a common exhaust pipe arranged in the center of the injection housing, and the common exhaust pipe passes through the Spray the bottom of the housing. 如請求項5所述之具串聯式冷卻室之多流道氣體噴射器,其中該共用排氣管內更設有一內套管。The multi-channel gas injector with a series cooling chamber as described in claim 5, wherein an inner sleeve is further provided in the common exhaust pipe. 如請求項1所述之具串聯式冷卻室之多流道氣體噴射器,更包括一轉接頭,其包括: 一輸入接頭,其上設有複數輸氣管、至少一第一輸液管及至少一第一排液管;及 一分流接頭,其上設有複數氣流通道、至少一第二輸液管及至少一第二排液管,該等氣流通道分別連通該等輸氣管,及分別連通該等排氣管,以輸入不同氣體至該等排氣管;該第二輸液管分別連通該第一輸液管及最內層該冷卻室,以輸入冷卻液;該第二排液管分別連通該第一排液管及最外層該冷卻室,以排出該冷卻液。The multi-channel gas ejector with tandem cooling chamber as described in claim 1, further comprising an adapter, which includes: An input connector, on which a plurality of gas transmission pipes, at least one first infusion pipe and at least one first discharge pipe are arranged; and A branch joint, which is provided with a plurality of air flow channels, at least one second liquid infusion tube and at least one second liquid discharge tube. Gas to the exhaust pipes; the second liquid infusion pipe is connected to the first liquid pipe and the innermost cooling chamber to input cooling liquid; the second liquid discharge pipe is connected to the first liquid discharge pipe and the outermost layer, respectively The cooling chamber to discharge the cooling liquid. 如請求項7所述之具串聯式冷卻室之多流道氣體噴射器,其中該等排氣流通道上更設有複數排氣開口,該等排氣開口分別連通該等排氣管。According to claim 7 of the multi-channel gas injector with a series cooling chamber, wherein the exhaust gas flow passages are further provided with a plurality of exhaust openings, and the exhaust openings are respectively connected to the exhaust pipes. 如請求項1所述之具串聯式冷卻室之多流道氣體噴射器,其中該排氣管內徑至少四公厘(mm),該排氣管的管壁可為2.5公厘(mm)至0.5公厘(mm)。The multi-channel gas injector with tandem cooling chamber according to claim 1, wherein the inner diameter of the exhaust pipe is at least four millimeters (mm), and the pipe wall of the exhaust pipe may be 2.5 millimeters (mm) To 0.5 millimeters (mm). 如請求項3所述之具串聯式冷卻室之多流道氣體噴射器,其中每一該氣體引流盤之間更設有一濾網。According to claim 3, the multi-channel gas ejector with serial cooling chambers, wherein a filter screen is further provided between each of the gas drainage discs.
TW109112379A 2020-04-13 2020-04-13 Multi-channel gas ejector with series cooling chamber TWI749521B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
TW109112379A TWI749521B (en) 2020-04-13 2020-04-13 Multi-channel gas ejector with series cooling chamber
CN202022411353.4U CN215560652U (en) 2020-04-13 2020-10-27 Multi-channel gas injector with serial cooling chambers
CN202022423919.5U CN214106268U (en) 2020-04-13 2020-10-27 Gas injector with purge gas flow passage
CN202022423997.5U CN214327877U (en) 2020-04-13 2020-10-27 Gas injector with double sleeve
CN202022427120.3U CN214218854U (en) 2020-04-13 2020-10-27 Gas injector with dual series cooling channels
CN202011160181.6A CN112410761A (en) 2020-04-13 2020-10-27 Multi-channel gas injector with serial cooling chambers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW109112379A TWI749521B (en) 2020-04-13 2020-04-13 Multi-channel gas ejector with series cooling chamber

Publications (2)

Publication Number Publication Date
TW202138610A true TW202138610A (en) 2021-10-16
TWI749521B TWI749521B (en) 2021-12-11

Family

ID=74841434

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109112379A TWI749521B (en) 2020-04-13 2020-04-13 Multi-channel gas ejector with series cooling chamber

Country Status (2)

Country Link
CN (5) CN214218854U (en)
TW (1) TWI749521B (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7709391B2 (en) * 2006-01-20 2010-05-04 Applied Materials, Inc. Methods for in-situ generation of reactive etch and growth specie in film formation processes
TWM600306U (en) * 2020-04-13 2020-08-21 寬輔科技股份有限公司 Multi-channel gas ejector with cascade cooling rooms

Also Published As

Publication number Publication date
CN214106268U (en) 2021-09-03
CN112410761A (en) 2021-02-26
CN214218854U (en) 2021-09-17
CN215560652U (en) 2022-01-18
TWI749521B (en) 2021-12-11
CN214327877U (en) 2021-10-01

Similar Documents

Publication Publication Date Title
US7829145B2 (en) Methods of uniformity control for low flow process and chamber to chamber matching
TWI499461B (en) Showerhead
JP4630226B2 (en) Chemical vapor deposition method and apparatus using showerhead
US6148761A (en) Dual channel gas distribution plate
CN106609363A (en) Semiconductor manufacturing system including deposition apparatus
TWM600306U (en) Multi-channel gas ejector with cascade cooling rooms
KR100943431B1 (en) Apparatus for processing substrate with plasma
TWI749521B (en) Multi-channel gas ejector with series cooling chamber
TW201335420A (en) Gas distribution apparatus with heat exchanging channels
CN109321894B (en) Deposition system and method for enhancing cleaning effect
WO2021227762A1 (en) Spreader plate and electrochemical deposition device
TWI709203B (en) Chamber cooling device and semiconductor processing equipment
KR20060130531A (en) Furnace apparatus
KR101323125B1 (en) Gas distribution system of vertical diffusion furnace for manufacturing semiconductor
CN112981370B (en) Inner tube of deposition furnace tube, deposition furnace tube and deposition method
TWI814291B (en) Uniform in situ cleaning and deposition
US11862475B2 (en) Gas mixer to enable RPS purging
KR0133439B1 (en) Apparatus for producing a semiconductor having shower head
KR100926187B1 (en) Shower-head type gas supplying device and supplying method for thin film-deposition apparatus
TW202340516A (en) Coating interior surfaces of complex bodies by atomic layer deposition
KR20230137714A (en) Deposition Apparatus and a Deposition Method using the Deposition Apparatus
TW202108811A (en) Temperature control apparatus
KR20150089328A (en) Showerhead and Chemical Vapor Deposition Apparatus Having the same
KR19990034052U (en) Wafer Uniform Cooling Structure of Semiconductor Manufacturing Equipment
KR20040079125A (en) Chemical vapor deposition apparatus