CN220724334U - Deposition treatment equipment, reaction cavity thereof and gas distribution device - Google Patents
Deposition treatment equipment, reaction cavity thereof and gas distribution device Download PDFInfo
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- CN220724334U CN220724334U CN202322182255.1U CN202322182255U CN220724334U CN 220724334 U CN220724334 U CN 220724334U CN 202322182255 U CN202322182255 U CN 202322182255U CN 220724334 U CN220724334 U CN 220724334U
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- 238000009826 distribution Methods 0.000 title claims abstract description 66
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 55
- 230000008021 deposition Effects 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims description 34
- 238000000605 extraction Methods 0.000 claims description 18
- 238000005086 pumping Methods 0.000 claims description 15
- 238000009423 ventilation Methods 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 8
- 239000002245 particle Substances 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 117
- 238000004891 communication Methods 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
The gas distribution device is positioned in the reaction cavity of the deposition processing equipment and comprises at least one spiral channel and a support ring connected to the outer side of the spiral channel, the gas outlet end of the spiral channel comprises a plurality of first openings, the support ring comprises a plurality of exhaust parts, the exhaust parts comprise a plurality of second openings, and the first openings and the second openings are mutually communicated to form an exhaust port. According to the utility model, the number of the exhaust ports is increased at the air outlet end of the spiral channel of the gas distribution device, and the exhaust part is increased in the supporting ring of the gas distribution device to serve as an exhaust space, so that the exhaust efficiency is improved, the gas is prevented from remaining in the spiral channel, the generation of particles is avoided, the process efficiency is improved, and the quality of the deposited film is ensured.
Description
Technical Field
The utility model relates to the field of semiconductor manufacturing, in particular to deposition treatment equipment and a gas distribution device thereof.
Background
In the deposition processing equipment, various chemical gases are required to be introduced into the reaction cavity to perform deposition processing on the substrate, and different chemical gases are required to avoid meeting before entering the reaction cavity so as to avoid generating granular byproducts due to reaction in the spraying device, thereby causing a great number of defects on the deposited film and adversely affecting the yield and reliability of the chip. At present, different gas inlet channels are mainly adopted to respectively convey different chemical gases into a reaction cavity, so that physical isolation among different gases is realized, the arrangement mode of the gas channels is generally designed to be complex, the gas channels are further caused to be longer, the time from a gas injection port to a gas exhaust port is too long, the gas flows in the gas channels easily to generate vortex, the gas is not easily discharged from the gas channels rapidly, redundant reaction gas is reserved in the gas channels, the process efficiency is reduced, and particles (part) can be generated for a long time due to the reserved reaction gas, so that the quality of a deposited film is further influenced.
The statements herein merely provide background information related to the present disclosure and may not necessarily constitute prior art.
Disclosure of Invention
The utility model aims to provide a deposition treatment device, a reaction cavity and a gas distribution device thereof, which improve the exhaust efficiency, avoid gas residues in a spiral channel, avoid generating particles, improve the process efficiency and ensure the quality of a deposited film.
In order to achieve the above object, the present utility model provides a gas distribution apparatus provided in a reaction chamber of a deposition processing apparatus below a chamber cover of the reaction chamber, the reaction chamber being provided therein with a susceptor carrying a substrate, the gas distribution apparatus comprising:
at least one spiral channel having an inlet end and an outlet end, the outlet end comprising at least one first opening located on an outer sidewall of the spiral channel; the spiral channel is provided with a plurality of gas distribution holes, and the gas distribution holes are positioned at the bottom of the spiral channel and are used for conveying gas into the reaction cavity;
the support ring is arranged in the side wall of the reaction cavity, the support ring is connected to the outer side of the spiral channel, the support ring comprises at least one exhaust component, the inner side wall of the exhaust component is provided with a plurality of second openings, the number, the size and the position of the second openings are matched with those of the first openings of the spiral channel, the second openings are mutually communicated with the first openings, and the bottom of the exhaust component is provided with a plurality of exhaust holes.
The projection pattern of the first opening of the spiral channel projected onto the plane of the substrate is positioned at the periphery of the substrate.
The ventilation of the first opening of the spiral channel is greater than the ventilation of a gas distribution hole provided at the bottom of the gas outlet end of the spiral channel.
The number of the exhaust members is equal to the number of the spiral passages.
The air inlet end of the spiral channel is positioned at the beginning end of the spiral channel, and the air outlet end of the spiral channel is positioned at the tail end of the spiral channel.
The start end of the spiral channel is positioned in the central area of the gas distribution device, the spiral channel spirals from the central area of the gas distribution device to the edge area of the gas distribution device, and the tail end of the spiral channel is positioned in the edge area of the gas distribution device.
The gas inlet ends of the spiral channels are located at the initial ends of the spiral channels, the gas inlet ends are connected to a gas source, and the gas inlet ends of different spiral channels are connected to different gas sources.
The utility model also provides a reaction chamber, comprising:
a cavity comprising a sidewall and a cavity cover;
the gas distribution device is arranged below the cavity cover;
a base, which is arranged in the cavity, a heater is arranged in the base, and the base is used for bearing a substrate;
the exhaust pump ring is arranged in the side wall of the cavity and is positioned below the gas distribution device, the top of the exhaust pump ring is provided with a plurality of air inlet channels, the air inlet channels are communicated with the exhaust holes on the gas distribution device, and the exhaust pump ring is provided with at least one exhaust hole.
The number of the air extraction openings on the air exhaust pump ring is equal to the number of the air exhaust components on the air distribution device, and the positions of the air extraction openings are matched with the positions of the air exhaust components.
The side wall of the cavity is provided with a substrate inlet and a substrate outlet, and the exhaust pump ring is arranged above the substrate inlet and the substrate outlet.
The present utility model also provides a deposition processing apparatus comprising: the reaction chambers are arranged side by side, and the air exhaust devices are respectively connected with the two reaction chambers;
the air extraction device comprises: the air pump and at least one set of foreline;
the foreline comprises:
the gas from one air extraction opening on one reaction cavity enters the foreline through one air inlet, and the gas from one air extraction opening on the other reaction cavity enters the foreline through the other air inlet; the two air extraction openings are positioned on the same side;
and one end of each exhaust pipeline is respectively connected with each air inlet in a matching way, the other end of each exhaust pipeline is communicated with the air extracting pump, and the trend of the two exhaust pipelines is consistent so that the flowing directions of fluid in the exhaust pipelines are consistent.
The foreline further comprises: the exhaust pump comprises two paths of connecting pipelines and a three-way unit, wherein one ends of the two paths of connecting pipelines are respectively connected with the two paths of exhaust pipelines, the other ends of the two paths of connecting pipelines are respectively connected with two ports of the three-way unit, and the other port of the three-way pipeline is communicated with the exhaust pump.
According to the utility model, the number of the exhaust ports is increased at the air outlet end of the spiral channel of the gas distribution device, and the exhaust part is increased in the supporting ring of the gas distribution device to serve as an exhaust space, so that the exhaust efficiency is improved, the gas is prevented from remaining in the spiral channel, the generation of particles is avoided, the process efficiency is improved, and the quality of the deposited film is ensured. The utility model further improves the exhaust efficiency and ensures the consistency of the substrates for deposition treatment in the two reaction chambers by enabling the exhaust ports of the two reaction chambers to be positioned on the same side of the two reaction chambers and consistent with the trend of the exhaust pipeline of the front pipeline which is arranged in a matched manner with the exhaust ports.
Drawings
Fig. 1 is a front view of a structure of a deposition processing apparatus provided by the present utility model.
Fig. 2 is a side view of fig. 1.
FIG. 3 is a schematic view of the deposition reaction chamber of FIG. 1.
Fig. 4 is a bottom view of the gas distribution apparatus of fig. 3.
Fig. 5 is a perspective cross-sectional view of the gas distribution apparatus of fig. 3.
Fig. 6 is an enlarged sectional view of the portion a in fig. 4.
Fig. 7 is an enlarged sectional view of the portion B in fig. 5.
Detailed Description
The following describes a preferred embodiment of the present utility model with reference to fig. 1 to 7.
As shown in fig. 1 and 2, the present utility model provides a deposition processing apparatus 1, which includes two deposition reaction chambers 2 arranged side by side, and air extraction devices 3 respectively connected to the two deposition reaction chambers 2.
As shown in fig. 3, the deposition reaction chamber 2 includes a chamber 21, the chamber 21 having a sidewall 211 and a chamber cover 212 covering the sidewall 211, the sidewall 211 having a substrate inlet and outlet 213 for transferring the substrate. A susceptor 23 is disposed in the cavity 21, a substrate 24 is carried on the susceptor 23, and a heater (not shown) is disposed in the susceptor 23 for heating the substrate 24. A gas distribution device 22 is disposed below the chamber lid 212, and the gas distribution device 22 is connected to an external gas source (not shown) for delivering a reaction gas from the gas source into the chamber 21 for performing a deposition process on the substrate 24. An exhaust pump ring 25 is disposed in the chamber sidewall 211, the exhaust pump ring 25 is disposed above the substrate inlet and outlet 213 and below the gas distribution device 22, the exhaust pump ring 25 is respectively in communication with the gas distribution device 22 and the gas exhaust device 3, and the exhaust pump ring 25 is used for exhausting the residual gas in the gas distribution device 22 through the gas exhaust device 3.
As shown in fig. 3 to 5, the gas distribution device 22 comprises at least one spiral channel 26 and a support ring 27 connected to the outside of the spiral channel 26, wherein the support ring 27 is disposed in the side wall 211 to provide a supporting force for the whole gas distribution device 22. The spiral channels 26 may be at least one, for alternately conveying the process gas into the cavity 21, or may be multiple, for conveying multiple reaction gases and cleaning gases into the cavity 21, and in general, two spiral channels 26 (as shown in fig. 4 and 5) are provided to alternately switch and convey at least two different reaction gases into the cavity 21, where the two spiral channels 26 can ensure physical isolation between different reaction gases, and can also compromise gas switching efficiency and reduce device cost.
The spiral channels 26 have an inlet end 28 and an outlet end 29, the inlet end 28 being connected to an external gas source, the inlet ends 28 of the different spiral channels 26 being connected to different gas sources, the outlet end 29 being in communication with the support ring 27, the support ring 27 being further in communication with the exhaust pump ring 25. The inlet end 28 and the outlet end 29 are generally located at the start end 30 and the end 31 of the spiral channel 26, respectively, so that the gas at each location in the spiral channel 26 can flow to the maximum extent, and the gas is prevented from remaining in the spiral channel 26.
The bottom of the spiral channel 26 is provided with a plurality of gas distribution holes 32, the gas distribution holes 32 are uniformly distributed throughout the bottom of the spiral channel 26, the bottom of the gas inlet end 28 and the bottom of the gas outlet end 29 are included, the gas distribution holes 32 are used for conveying the gas in the spiral channel 26 into the cavity 21 for carrying out deposition treatment on the substrate 24, the distribution range of the spiral channel 26 is larger than the area of the substrate 24, so that any part on the whole substrate 24 can be contacted with the gas sprayed from the gas distribution holes 32, the gas density difference between the edge and the center of the substrate 24 is avoided, and the uniformity of the process is ensured.
Because the outlet end 29 of the spiral-shaped channel 26 needs to communicate with the support ring 27, the outlet end 29 may be provided at the edge to ensure that it is close to the support ring 27, typically by arranging the initial end 30 of the spiral-shaped channel 26 in the central region of the gas distribution device 22, spiraling the spiral-shaped channel 26 from the center of the gas distribution device 22 to the edge of the gas distribution device 22 until the final end 31 of the spiral-shaped channel 26 is at the edge of the gas distribution device 22, thereby allowing the outlet end 29 of the spiral-shaped channel 26 to communicate with the support ring 27.
As shown in fig. 6 and 7, the air outlet end 29 of the spiral-shaped channel 26 comprises at least one first opening 33, and accordingly, the support ring 27 comprises at least one air outlet member 34, the number of the air outlet members 34 is equal to that of the spiral-shaped channels 26, each air outlet member 34 is used for matching and communicating with the air outlet end 29 of each spiral-shaped channel 26, further, the air outlet member 34 is provided with at least one second opening 35, and the second opening 35 and the first opening 33 are mutually communicated, so that the air outlet end 29 of the spiral-shaped channel 26 and the air outlet member 34 in the support ring 27 are mutually communicated. Preferably, the first opening 33 is disposed on the outer sidewall of the spiral channel 26, and correspondingly, the second opening 35 is disposed on the inner sidewall of the exhaust member 34, so that the first opening 33 and the second opening 35 are most easily communicated with each other, and the communicated first opening 33 and second opening 35 form an exhaust port, which is perpendicular to the gas flowing direction in the spiral channel 26, so as to help to improve the exhaust efficiency and avoid gas residue in the spiral channel 26. The number, size and position of the first openings 33 and the second openings 35 are matched with each other, so as to ensure that each first opening 33 is communicated with a corresponding one of the second openings 35, the larger the number of the first openings 33 and the second openings 35 is, the larger the opening size is, the larger the gas flux can be discharged, and the gas in the spiral channel 26 is ensured to be discharged into the gas discharging part 34 in the supporting ring 27 quickly by increasing the gas outlet of the gas outlet end of the spiral channel 26, so that the gas is prevented from remaining in the spiral channel 26. Further, the ventilation of the first opening 33 should be made larger than the ventilation of the gas distribution holes 32 provided at the bottom of the gas outlet end 29 of the spiral-shaped channel 26, so that the gas that should be discharged out of the reaction chamber is prevented from escaping into the reaction chamber. Meanwhile, the exhaust component 34 arranged in the support ring 27 serves as an additional exhaust space, so that the exhaust quantity is further increased, and the exhaust efficiency is improved. As described above, on the basis that the range of distribution of the spiral passage 26 is larger than the area of the substrate 24, it is further ensured that the range of distribution of the exhaust ports formed by the first opening 33 and the second opening 35 is located at the periphery of the substrate, that is, the projection pattern of the first opening 33 of the spiral passage 26 projected onto the plane of the substrate 24 is located at the periphery of the substrate 24, so that the reaction gas which should be supplied to the surface of the substrate 24 through the gas distribution holes 32 is prevented from being pumped away by the exhaust ports formed by the first opening 33 and the second opening 35, the reaction gas density of the edge portion of the substrate 24 is prevented from becoming small, and the process uniformity of the surface of the substrate is ensured.
As shown in fig. 3 to 7, in order to achieve the communication between the support ring 27 and the exhaust pump ring 25, a plurality of exhaust holes 36 are provided at the bottom of the exhaust member 34 in the support ring 27, and correspondingly, a plurality of intake passages 37 are provided at the top of the exhaust pump ring 25, the number, size and position of the intake passages 37 and the exhaust holes 36 are matched with each other, the intake passages 37 and the exhaust holes 36 are communicated with each other, and it is achieved that the gas in the support ring 27 is pumped into the exhaust pump ring 25.
Further, as shown in fig. 3, at least one pumping hole 38 is provided in the exhaust pump ring 25, the pumping hole 38 is in communication with the pumping device 3, and the gases in the gas distribution device 22 and the deposition reaction chamber 2 are exhausted through the pumping hole 38. Optionally, the number of the air extraction openings 38 is equal to the number of the air exhaust components 34 on the support ring 27, and the positions of the air extraction openings 38 are matched with the positions of the air exhaust components 34, that is, the air extraction openings 38 are arranged near the air inlet channels 37 on the air exhaust pump ring 25, so that the shortest path between the air inlet channels 37 and the air extraction openings 38 is ensured, the air entering the air exhaust pump ring 25 from the air inlet channels 37 can be extracted by the air extraction device 3 through the air extraction openings 38 at the fastest speed, the air exhaust efficiency is improved, and the residence time of the air in the air distribution device 22 is further reduced.
As shown in fig. 1 and 2, the air extracting device 3 includes an air extracting pump 301 and at least one set of foreline 302 respectively connected to the air extracting pump 301 and the deposition reaction chamber 2. The foreline 302 includes two gas inlets 303-1 and 303-2, two sets of gas passages, and a three-way unit 306, where the gas inlets 303-1 and 303-2 respectively receive the gas output from the pumping ports 38 on the two deposition reaction chambers 2 arranged side by side, the two gas passages respectively connect the two gas inlets 303-1 and 303-2 to two ports of the three-way unit 306, and a third port of the three-way unit 306 is connected to the pumping pump 301.
Further, the gas from one of the pumping ports 38 on one of the deposition reaction chambers 2 enters the foreline 302 through the first gas inlet 303-1, and the gas from one of the pumping ports 38 on the other deposition reaction chamber 2 enters the foreline 302 through the second gas inlet 303-2, where the gas inlets may be directly connected to the pumping ports 38 or indirectly connected through a pipe or other device, where it is required to ensure that the two pumping ports 38 connected to the gas inlets 303-1 and 303-2 are located on the same side of the two deposition reaction chambers 2, if there are multiple pumping ports 38 on the deposition reaction chambers 2, multiple sets of forelines 302 may be provided according to the actual situation, but still ensure that the gas inlets 38 connected to the two gas inlets in each set of forelines 302 are located on the same side of the two deposition reaction chambers 2, so as to ensure that the gas flows entering the forelines 302 from the two gas inlets are identical, so as to ensure that the wafers processed in the two reaction chambers have identical pumping ports.
Each of the gas passages includes an exhaust pipe 304 and a connecting pipe 305, one end of the exhaust pipe 304 is connected to the first gas inlet 303-1 or the second gas inlet 303-2, the other end of the exhaust pipe 304 is connected to the connecting pipe 305, one end of the connecting pipe 305 is connected to the exhaust pipe 304, and the other end of the connecting pipe 305 is connected to the three-way unit 306. The two exhaust pipes 304 are arranged in parallel, and the directions of the two exhaust pipes 304 are consistent, so that the gas flow directions in the two exhaust pipes 304 are consistent, and the exhaust efficiency is improved.
According to the utility model, the number of the exhaust ports is increased at the air outlet end of the spiral channel of the gas distribution device, and the exhaust part is increased in the supporting ring of the gas distribution device to serve as an exhaust space, so that the exhaust efficiency is improved, the gas is prevented from remaining in the spiral channel, the generation of particles is avoided, the process efficiency is improved, and the quality of the deposited film is ensured. The utility model further improves the exhaust efficiency and ensures the consistency of the substrates for deposition treatment in the two reaction chambers by enabling the exhaust ports of the two reaction chambers to be positioned on the same side of the two reaction chambers and consistent with the trend of the exhaust pipeline of the front pipeline which is arranged in a matched manner with the exhaust ports.
It should be noted that, in the embodiments of the present utility model, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the embodiments, and do not indicate or imply that the apparatus or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the present utility model, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.
While the present utility model has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the utility model. Many modifications and substitutions of the present utility model will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the utility model should be limited only by the attached claims.
Claims (12)
1. A gas distribution apparatus provided in a reaction chamber of a deposition processing apparatus below a chamber lid of the reaction chamber, the reaction chamber being provided therein with a susceptor for carrying a substrate, the apparatus comprising:
at least one spiral channel having an inlet end and an outlet end, the outlet end comprising at least one first opening located on an outer sidewall of the spiral channel; the spiral channel is provided with a plurality of gas distribution holes, and the gas distribution holes are positioned at the bottom of the spiral channel and are used for conveying gas into the reaction cavity;
the support ring is arranged in the side wall of the reaction cavity, the support ring is connected to the outer side of the spiral channel, the support ring comprises at least one exhaust component, the inner side wall of the exhaust component is provided with a plurality of second openings, the number, the size and the position of the second openings are matched with those of the first openings of the spiral channel, the second openings are mutually communicated with the first openings, and the bottom of the exhaust component is provided with a plurality of exhaust holes.
2. The gas distribution apparatus according to claim 1, wherein a projected pattern of the first opening of the spiral channel projected onto a plane on which the substrate lies is located at a periphery of the substrate.
3. The gas distribution apparatus of claim 1, wherein the ventilation of the first opening of the spiral channel is greater than the ventilation of a gas distribution hole provided in the bottom of the gas outlet end of the spiral channel.
4. The gas distribution device of claim 1, wherein the number of exhaust components is equal to the number of spiral channels.
5. The gas distribution device of claim 1, wherein the gas inlet end of the spiral channel is located at the beginning of the spiral channel and the gas outlet end of the spiral channel is located at the end of the spiral channel.
6. The gas distribution apparatus of claim 5, wherein a start of the spiral channel is located in a central region of the gas distribution apparatus, the spiral channel spirals from the central region of the gas distribution apparatus to an edge region of the gas distribution apparatus, and a tail of the spiral channel is located in the edge region of the gas distribution apparatus.
7. The gas distribution apparatus of claim 5, wherein the gas inlet ends are connected to a gas source and the gas inlet ends of different spiral channels are connected to different gas sources.
8. A reaction chamber, the reaction chamber comprising:
a cavity comprising a sidewall and a cavity cover;
the gas distribution apparatus according to any one of claims 1 to 7, which is provided below the chamber cover;
a base, which is arranged in the cavity, a heater is arranged in the base, and the base is used for bearing a substrate;
the exhaust pump ring is arranged in the side wall of the cavity and is positioned below the gas distribution device, the top of the exhaust pump ring is provided with a plurality of air inlet channels, the air inlet channels are communicated with the exhaust holes on the gas distribution device, and the exhaust pump ring is provided with at least one exhaust hole.
9. The reaction chamber of claim 8 wherein the number of said pumping ports on said pumping ring is equal to the number of said exhaust components on said gas distribution means and the positions of said pumping ports are matched to the positions of said exhaust components.
10. The reaction chamber of claim 8, wherein the chamber body has a substrate access port in a sidewall thereof, and wherein the exhaust pump ring is disposed above the substrate access port.
11. A deposition processing apparatus, comprising: two reaction chambers according to any one of claims 8-10 arranged side by side, and air extraction means respectively connecting the two reaction chambers;
the air extraction device comprises: the air pump and at least one set of foreline;
the foreline comprises:
the gas from one air extraction opening on one reaction cavity enters the foreline through one air inlet, and the gas from one air extraction opening on the other reaction cavity enters the foreline through the other air inlet; the two air extraction openings are positioned on the same side;
and one end of each exhaust pipeline is respectively connected with each air inlet in a matching way, the other end of each exhaust pipeline is communicated with the air extracting pump, and the trend of the two exhaust pipelines is consistent so that the flowing directions of fluid in the exhaust pipelines are consistent.
12. The deposition processing apparatus of claim 11, wherein the foreline further comprises: the exhaust pump comprises two paths of connecting pipelines and a three-way unit, wherein one ends of the two paths of connecting pipelines are respectively connected with the two paths of exhaust pipelines, the other ends of the two paths of connecting pipelines are respectively connected with two ports of the three-way unit, and the other port of the three-way unit is communicated with the exhaust pump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322182255.1U CN220724334U (en) | 2023-08-14 | 2023-08-14 | Deposition treatment equipment, reaction cavity thereof and gas distribution device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322182255.1U CN220724334U (en) | 2023-08-14 | 2023-08-14 | Deposition treatment equipment, reaction cavity thereof and gas distribution device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220724334U true CN220724334U (en) | 2024-04-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322182255.1U Active CN220724334U (en) | 2023-08-14 | 2023-08-14 | Deposition treatment equipment, reaction cavity thereof and gas distribution device |
Country Status (1)
| Country | Link |
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| CN (1) | CN220724334U (en) |
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- 2023-08-14 CN CN202322182255.1U patent/CN220724334U/en active Active
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