CN114883221A - Semiconductor heat treatment equipment - Google Patents

Semiconductor heat treatment equipment Download PDF

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Publication number
CN114883221A
CN114883221A CN202210490587.3A CN202210490587A CN114883221A CN 114883221 A CN114883221 A CN 114883221A CN 202210490587 A CN202210490587 A CN 202210490587A CN 114883221 A CN114883221 A CN 114883221A
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exhaust
inner tube
chamber inner
chamber
exhaust portion
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CN202210490587.3A
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Chinese (zh)
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任攀
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to CN202210490587.3A priority Critical patent/CN114883221A/en
Publication of CN114883221A publication Critical patent/CN114883221A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0083—Chamber type furnaces with means for circulating the atmosphere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)

Abstract

The application discloses semiconductor heat treatment equipment, and belongs to the technical field of semiconductor process equipment. The semiconductor heat treatment apparatus includes: a chamber inner tube having an inner circumferential surface; the exhaust pipe is communicated with the inner pipe of the cavity; the exhaust structure is arranged on the inner peripheral surface, an exhaust cavity is formed between the exhaust structure and the inner tube of the cavity, the exhaust cavity is communicated with the exhaust pipe, an exhaust port is arranged on the exhaust structure, and the total exhaust area of the exhaust port is larger than a first preset area so that gas in the inner tube of the cavity flows into the exhaust cavity in a diffusion mode. The scheme can solve the problems that residues are easy to form in semiconductor heat treatment equipment, the pressure of a process chamber is difficult to reduce to a target value in a short time, and the temperature field of an inner tube of the chamber is not uniform.

Description

Semiconductor heat treatment equipment
Technical Field
The application belongs to the technical field of semiconductor process equipment, and particularly relates to semiconductor heat treatment equipment.
Background
Diffusion furnaces are one of the important process equipment in semiconductor manufacturing lines, and can be used to perform diffusion, oxidation, annealing, etc. processes for various components. For example, in integrated circuits, diffusion furnaces may be used to deposit thin films such as insulating layers, dielectric layers, etc.
The diffusion furnace mainly comprises a process chamber, a gas injector and other components arranged in the process chamber, wherein a chamber inner tube of the process chamber is provided with an exhaust slit, a protruding part and an exhaust port, an exhaust cavity is formed between the exhaust slit and the protruding part, and the exhaust cavity is communicated with the exhaust port. The wafer can be placed in a process chamber, and the gas ejected by the gas ejector can reach the surface of the wafer, so that deposition is realized. After the deposition is completed, the unreacted gas and by-products in the process chamber can enter the exhaust chamber through the exhaust slit and further be exhausted through the exhaust port.
When the gas flows from the exhaust slit to the convex part rapidly in the operation process of the diffusion furnace, the gas flow density at the two edges of the exhaust slit is high, the flow speed is slow, and residues are easy to form at the edges of the exhaust slit. After the residue accumulates to a certain degree, the residue is easy to drop to the product under the action of thermal stress or exhaust wind force, thereby causing the yield of the product to be reduced. Meanwhile, the residual gas in the exhaust slit may make it difficult to reduce the pressure in the process chamber to a target value in a short time, and the protrusion may cause non-uniformity of the temperature field of the inner tube of the chamber, which may also result in a reduction in the yield of the product.
Disclosure of Invention
The embodiment of the application aims to provide semiconductor heat treatment equipment which can solve the problems that residues are easy to form in the semiconductor heat treatment equipment, the pressure of a process chamber is difficult to reduce to a target value in a short time, and the temperature field of an inner pipe of the chamber is not uniform.
In order to solve the technical problem, the present application is implemented as follows:
an embodiment of the present application provides a semiconductor heat treatment apparatus, including:
a chamber inner tube having an inner circumferential surface;
an exhaust pipe in communication with the chamber inner pipe;
the exhaust structure is arranged on the inner peripheral surface, an exhaust cavity is formed between the exhaust structure and the cavity inner tube and communicated with the exhaust pipe, an exhaust port is arranged on the exhaust structure, and the total exhaust area of the exhaust port is larger than a first preset area so that gas in the cavity inner tube flows into the exhaust cavity in a diffusion mode.
In this application embodiment, because exhaust structure is embedded in the cavity inner tube, consequently, the size of first exhaust portion can set up bigger, and then increase the exhaust chamber that forms, when the gas in the discharge cavity inner tube, because exhaust structure is equipped with the gas vent, and the total exhaust area of gas vent is greater than first area of predetermineeing, it is enough big to explain total exhaust area, consequently, the gas in the cavity inner tube can be the diffusion form and flow to the exhaust chamber in, consequently, the gathering is difficult to take place at exhaust structure's both edges, that is to say, the gas density at both edges is less, thereby can avoid the reduction of gas flow rate, be favorable to preventing that gas and accessory substance from attaching to exhaust structure's edge, avoid forming the residue, and then can promote the yield of product. In addition, the gas and the byproducts are prevented from being attached to the edge of the exhaust structure, the pressure in the process chamber can be prevented from being influenced, and the pressure in the process chamber can be reduced to a target value in a short time; moreover, because the exhaust structure is embedded in the inner pipe of the cavity, the temperature field in the inner pipe of the cavity is more uniform, so that the yield of products is improved.
Drawings
Fig. 1 is a schematic structural view of a semiconductor thermal processing apparatus disclosed in an embodiment of the present application;
FIG. 2 is a cross-sectional view of FIG. 1;
fig. 3 is a cross-sectional view of a semiconductor thermal processing apparatus disclosed in another embodiment of the present application;
the arrows in fig. 2 and 3 indicate the flow direction of the gas.
Description of reference numerals:
100-chamber inner tube, 101-inner peripheral surface;
200-exhaust pipe, 201-convex part;
300-exhaust structure, 310-first exhaust, 311-first exhaust, 320-second exhaust, 321-second exhaust, 330-third exhaust, 331-third exhaust;
400-an exhaust chamber;
500-a chamber outer tube;
600-a mounting seat;
700-an air inlet pipe;
800-crystal boat.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that embodiments of the application may be practiced in sequences other than those illustrated or described herein, and that the terms "first," "second," and the like are generally used herein in a generic sense and do not limit the number of terms, e.g., the first term can be one or more than one. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.
The semiconductor thermal processing apparatus provided in the embodiments of the present application is described in detail by referring to the drawings and specific embodiments and application scenarios thereof.
As shown in fig. 1 to 3, an embodiment of the present application provides a semiconductor heat treatment apparatus, which may be a diffusion furnace, including a chamber inner tube 100, an exhaust pipe 200, and an exhaust structure 300.
The chamber inner tube 100 may be cylindrical in shape. The chamber inner tube 100 has an inner peripheral surface 101 and a first through-hole, which may penetrate the chamber inner tube 100. The first through hole may be a circular hole, a rectangular hole, or another type of hole, which is not limited in the embodiments of the present application.
The exhaust pipe 200 is in communication with the chamber inner pipe 100, and specifically, the exhaust pipe 200 is in communication with the chamber inner pipe 100 through a first through hole, the exhaust pipe 200 is connected to the chamber inner pipe 100, the exhaust pipe 200 is located outside the chamber inner pipe 100, and the exhaust pipe 200 may be in communication with the first through hole to exhaust gas flowing in from the first through hole. The exhaust end of the exhaust pipe 200 is provided with a convex portion 201 at the outer edge, and the convex portion 201 can facilitate the connection of the exhaust pipe 200 with other pipe fittings.
The exhaust structure 300 is disposed on the inner circumferential surface 101, and the exhaust chamber 400 is formed between the exhaust structure 300 and the chamber inner tube 100, and since the exhaust chamber 400 is disposed inside the chamber inner tube 100, the volume of the exhaust chamber 400 can be set larger, and thus more gas exhausted from the chamber inner tube 100 can be accommodated. The exhaust chamber 400 is in communication with the exhaust pipe 200, and specifically, the exhaust chamber 400 may be in communication with the exhaust pipe 200 through the first through hole, so that gas may flow out of the exhaust pipe 200.
The exhaust structure 300 is provided with exhaust ports, and the total exhaust area of the exhaust ports is larger than a first preset area, so that the gas in the inner tube 100 of the chamber can flow into the exhaust cavity 400 in a diffusion manner. Alternatively, a larger number of exhaust ports may be formed in the exhaust structure 300, and the exhaust area of each exhaust port may also be increased, so that the total exhaust area of the exhaust ports is larger than the first preset area. It should be noted that the first preset area may not be a fixed area value, and may be set as needed.
In this embodiment, optionally, the total exhaust area of the exhaust port may be set according to the total intake area of the chamber inner tube 100, and the total exhaust area of the exhaust port and the total intake area of the chamber inner tube 100 may satisfy a certain ratio relationship, or satisfy other relationships, and it is sufficient to set the total exhaust area of the exhaust port as needed.
In the embodiment of the present application, because the exhaust structure 300 is embedded in the chamber inner tube 100, the size of the first exhaust portion 310 can be set to be relatively large, and further the exhaust cavity 400 formed is enlarged, when the gas in the chamber inner tube 100 is exhausted, because the exhaust port is arranged on the exhaust structure 300, and the total exhaust area of the exhaust port is greater than the first preset area, it is described that the total exhaust area is large enough, and therefore the gas in the chamber inner tube 100 can flow into the exhaust cavity 400 in a diffusion manner, and therefore aggregation is not easy to occur at two edges of the exhaust structure 300, that is, the gas density at the two edges is relatively small, thereby reducing the gas flow rate can be avoided, which is beneficial to preventing the gas and byproducts from attaching to the edges of the exhaust structure 300, and avoiding formation of residues, and further improving the yield of products. In addition, the gas and by-products are prevented from adhering to the edge of the exhaust structure 300, which can avoid affecting the pressure in the process chamber, which is liable to decrease to a target value in a short time; moreover, since the exhaust structure 300 is embedded in the inner tube 100 of the chamber, the temperature field in the inner tube 100 of the chamber is more uniform, which is more favorable for improving the yield of the product.
In an alternative embodiment, the exhaust structure 300 may include a first exhaust portion 310 including a first exhaust port 311, the first exhaust portion 310 is provided with a plurality of first exhaust ports, and the first exhaust portion 310 is opposite to the first through hole to shorten a path along which gas flows, so that exhaust efficiency may be improved. The first exhaust portion 310 may have an arc-shaped structure, or may have a structure with another shape, which is not limited in the embodiment of the present application. Optionally, the first exhaust portion 310 is an arc-shaped structure and is disposed around the boat 800. Thus, when the gas flow contacts the first exhaust portion 310, the gas flow can flow to both sides of the exhaust structure 300 under the guiding action of the arc structure, which is helpful for the gas in the inner tube 100 of the chamber to flow into the exhaust cavity 400 in a diffusion manner, thereby preventing the gas from gathering at both edges of the exhaust structure 300 and improving the yield of the product. Furthermore, the first exhaust portion 310 is recessed toward the exhaust pipe 200, so that the first exhaust portion 310 matches the shape of the inner pipe 100 of the chamber to form a larger exhaust chamber 400, and the first exhaust portion 310 can match the shape of the boat 800, so that the gas in the boat 800 can rapidly flow in a diffused manner, and thus the gas can be exhausted more smoothly.
The chamber inner tube 100 is provided with a wafer boat 800, and wafers may be placed on the wafer boat 800, and optionally, the wafer boat 800 is located at the center of the chamber inner tube 100. The first exhaust portion 310 is provided with a plurality of first exhaust ports 311 at intervals, which helps the gas to diffuse into the exhaust chamber 400 through each first exhaust port 311. Alternatively, the first exhaust ports 311 may be rectangular in shape so as to facilitate smooth passage of gas through the first exhaust ports 311, and the size of the first exhaust ports 311 in a direction around the boat 800 may be larger than the size of the first exhaust ports 311 in a direction parallel to the axis of the chamber inner tube 100. Of course, the shape of the first exhaust port 311 may also be a circle or another shape, which is not limited in the embodiments of the present application.
A plurality of first exhaust ports 311 may be provided at intervals in a direction parallel to the axis of the chamber inner tube 100, and since gas may enter the upper space of the wafers, most of the gas may be exhausted through gaps between adjacent wafers, and the first exhaust ports 311 may correspond to gaps formed between adjacent wafers, thereby facilitating rapid exhaust of the gas.
Alternatively, the exhaust area of the first exhaust ports 311 may be larger than the second preset area, so that the total exhaust flow of each first exhaust port 311 is larger, and the total exhaust area of the exhaust ports is larger than the first preset value. The distance between the adjacent edges of the adjacent first exhaust ports 311 is smaller than a first preset distance, that is, the distance between the adjacent first exhaust ports 311 is smaller, and the distance between the first exhaust ports 311 adjacent to the edge of the first exhaust portion 310 and the edge is smaller than a second preset distance, that is, the distance between the first exhaust ports 311 close to the edge and the edge of the first exhaust portion 310 is also smaller, so that the first exhaust ports 311 are laid on the first exhaust portion 310 in a whole surface, and the total exhaust area of the exhaust ports is larger than a first preset value. It should be noted that the second preset area, the first preset distance, and the second preset distance may not be fixed values, and may be set as needed.
In one embodiment, the axial centerline of the cylinder in which the first exhaust portion 310 is located is not collinear with the axial centerline of the cylinder in which the chamber inner tube 100 is located. In another embodiment, the axial center line of the cylinder where the first exhaust portion 310 is located is collinear with the axial center line of the cylinder where the chamber inner tube 100 is located, so as to prevent the gases from disturbing each other, and simultaneously, the exhaust cavity 400 is enlarged, which facilitates the stable flow of the gases in the exhaust cavity 400.
When the gas to be exhausted flows to both sides of the exhaust structure 300, if there is no exhaust passage on both sides, the gas is easily left on both sides, resulting in difficulty in lowering the pressure in the chamber inner tube 100 to the target value in a short time. Both sides herein refer to both side edge portions of the exhaust structure 300 in the direction surrounding the boat 800. Therefore, in order to solve this problem, the exhaust structure 300 may further include a second exhaust portion 320 and a third exhaust portion 330, the first exhaust portion 310 is connected to the chamber inner tube 100 through the second exhaust portion 320 and the third exhaust portion 330, respectively, the second exhaust portion 320 is provided with a second exhaust port 321, and the third exhaust portion 330 is provided with a third exhaust port 331, that is, the exhaust ports further include the second exhaust port 321 and the third exhaust port 331. The gas remaining in the chamber inner tube 100 can be exhausted through the second exhaust port 321 of the second exhaust portion 320 and the third exhaust port 331 of the third exhaust portion 330, thereby facilitating the pressure in the chamber inner tube 100 to be reduced to a target value in a short time. In addition, a larger exhaust cavity can be formed by adding the second exhaust portion 320 and the third exhaust portion 330, which is more convenient for exhausting. The second exhaust port 321 and the third exhaust port 331 may have a rectangular shape to facilitate gas to smoothly pass through the second exhaust port 321 and the third exhaust port 331, and of course, the second exhaust port 321 and the third exhaust port 331 may also have a circular shape or other shapes, which is not limited in this embodiment.
In one embodiment, the central angle of the first exhaust portion 310 is smaller than 120 ° or larger than 180 °, and in another embodiment, the central angle of the first exhaust portion 310 is 120 ° to 180 °. Alternatively, the corresponding central angle of the first exhaust portion 310 may be 120 °, 150 °, 180 °, or the like. The central angle in this embodiment is suitable for rapid gas exhaust and deposition of insulating layer, dielectric layer, and other films.
Optionally, at least one of the second exhaust portion 320 and the third exhaust portion 330 is an arc-shaped structure. In another alternative embodiment, at least one of the second exhaust portion 320 and the third exhaust portion 330 is a flat plate structure, and a plane of the flat plate structure extends along a radial direction of the inner tube 100 of the chamber. In this embodiment, the flat plate-shaped second exhaust part 320 and/or the flat plate-shaped third exhaust part 330 have less influence on the direction of the gas flow, and thus facilitate the gas to be discharged from the second exhaust part 320 and the third exhaust part 330, so that the time for the gas to be discharged from the second exhaust part 320 and the third exhaust part 330 can be shortened.
In another embodiment, as shown in fig. 3, at least one of the second exhaust portion 320 and the third exhaust portion 330 is a flat plate structure, a plane of the flat plate structure is inclined with respect to a radial direction of the chamber inner tube 100, and an included angle between a normal line of an intersection of the chamber inner tube 100 and the flat plate structure is an acute angle, which indicates that the flat plate structure is inclined with respect to the normal line of the intersection, and the flat plate structure faces the boat 800. Specifically, the side of the flat plate structure connected to the chamber inner pipe 100 is farther from the exhaust pipe 200 than the side of the flat plate structure connected to the first exhaust portion 310. It should be noted that a normal line at the intersection of the chamber inner tube 100 and the flat plate structure is perpendicular to a tangent line at the intersection of the chamber inner tube 100 and the flat plate structure, and the normal line at the intersection passes through the center of the chamber inner tube 100. In this embodiment, since the second exhaust portion 320 and the third exhaust portion 330 are obliquely disposed, when the gas flows to the second exhaust portion 320 and the third exhaust portion 330, even if the gas is blocked by the region without the exhaust port, the gas can flow to the position of the exhaust port and then be exhausted, and the gas is not easily gathered at the dead angle, thereby avoiding the residue accumulation at the two edges of the exhaust structure 300 and improving the yield of the product.
The second air outlet 321 needs to penetrate through the second air outlet 320, the third air outlet 331 needs to penetrate through the third air outlet 330, an included angle may exist between the penetrating direction of the second air outlet 321 and the surface where the second air outlet 320 is located, and an included angle may exist between the penetrating direction of the third air outlet 331 and the surface where the third air outlet 330 is located. In another embodiment, the second exhaust portion 320 is a flat plate structure, and the second exhaust port 321 penetrates through the second exhaust portion 320 in a direction perpendicular to the second exhaust portion 320; and/or, the third exhaust portion 330 has a flat plate structure, and the third exhaust port 331 penetrates the third exhaust portion 330 in a direction perpendicular to the third exhaust portion 330. In this embodiment, the gas flowing through the second and third exhaust ports 321 and 331 does not easily collide with the chamber inner tube 100 or the first exhaust portion 310, so the smoothness of exhaust is better and the pressure in the chamber inner tube 100 can be reduced to a target value in a short time.
In an alternative embodiment, in order to enable the gas remaining on both sides of the exhaust structure 300 to be rapidly exhausted from the chamber inner tube 100, a plurality of second exhaust ports 321 are arranged at intervals in a direction parallel to the axis of the chamber inner tube 100, and each second exhaust port 321 penetrates through the second exhaust portion 320 in a direction perpendicular to the second exhaust portion 320; and/or a plurality of third exhaust ports 331 are provided at intervals in a direction parallel to the axis of the chamber inner tube 100, and each third exhaust port 331 penetrates the third exhaust portion 330 in a direction perpendicular to the third exhaust portion 330. Since the number of the second exhaust ports 321 and/or the third exhaust ports 331 is large, more gas may be allowed to be exhausted from the second exhaust ports 321 and the third exhaust ports 331, so that the residual gas may be exhausted more rapidly. In addition, since the number of the second exhaust ports 321 and/or the third exhaust ports 331 is large, gaps between the second exhaust ports 321 and/or the third exhaust ports 331 and adjacent wafers can be in one-to-one correspondence, and thus, smooth exhaust can be achieved.
The first exhaust port 311 needs to penetrate through the first exhaust portion 310, an angle may exist between a penetrating direction of the first exhaust port 311 and a radial direction of the chamber inner tube 100, and in other embodiments, the first exhaust port 311 penetrates through the first exhaust portion 310 along the radial direction of the chamber inner tube 100. In this embodiment, the extending direction of the first exhaust port 311 is substantially the same as the direction before the gas enters the first exhaust port 311, the gas passes through the first exhaust port 311 without changing the flow direction, so the fluency is better, and the pressure in the chamber inner tube 100 can be reduced to the target value in a short time.
When the number of the first exhaust ports 311 is plural, the plural first exhaust ports 311 may be irregularly distributed. In another embodiment, the plurality of first exhaust ports 311 are distributed in an array, and further, may be distributed in a row-to-row manner. At this time, in the axial direction of the chamber inner tube 100, the number of the first exhaust ports 311 in each layer is large, and the gas distribution is uniform, which is favorable for the gas flowing to each layer of wafers to be quickly exhausted from the chamber inner tube 100.
Both ends of the exhaust structure 300 in the axial direction of the chamber inner tube 100 may be defined as a first end having a first predetermined distance from one end of the chamber inner tube 100 and a second end having a second predetermined distance from the other end of the chamber inner tube 100, respectively. In another alternative embodiment, the first end of the exhaust structure 300 extends to one end of the chamber inner tube 100, and the second end of the exhaust structure 300 extends to the other end of the chamber inner tube 100. In this embodiment, the gas exhaust structure 300 extends from one end of the chamber inner tube 100 to the other end of the chamber inner tube 100, so that gas is prevented from being collected at both ends of the chamber inner tube 100, and smooth gas exhaust from the gas exhaust structure 300 is facilitated.
In an alternative embodiment, both ends of the chamber inner tube 100 in the axial direction are sealed by plate members. In another alternative embodiment, the semiconductor thermal processing apparatus may further include an outer chamber tube 500, and the outer chamber tube 500 is sleeved outside the inner chamber tube 100. The chamber outer tube 500 is provided with a second through-hole through which one end of the exhaust pipe 200 passes and is connected to the chamber inner tube 100. The contact area between the inner chamber tube 100 and the external environment can be reduced by the outer chamber tube 500, which is beneficial to improving the uniformity of the temperature field in the inner chamber tube 100.
In an alternative embodiment, in order to prevent the gas exhausted into the exhaust chamber 400 from being exhausted to other places along the two axial ends of the chamber inner tube 100, the semiconductor thermal processing apparatus may further include a top cover and a bottom plate, the two axial ends of the exhaust structure 300 along the chamber inner tube 100 are respectively a first end and a second end, the top cover is disposed at the first end, the bottom plate is disposed at the second end, the top cover is opposite to the bottom plate, and the exhaust structure 300 is respectively connected to the top cover and the bottom plate, so as to form the relatively closed exhaust chamber 400. The gas discharged into the gas discharge chamber 400 is prevented from being discharged to other places along both axial ends of the chamber inner tube 100 by the top cover and the bottom plate. Alternatively, the top and bottom panels may be of flat panel construction. When the exhaust structure 300 includes the first, second, and third exhaust parts 310, 320, and 330, the top cover, and the bottom plate may be integrally formed and then welded to the chamber inner tube 100, thereby improving the sealability of the exhaust chamber 400.
The semiconductor heat treatment apparatus may further include a mounting seat 600 and an air inlet pipe 700, the inner circumferential surface 101 of the chamber inner pipe 100 may further be provided with a third through hole, the mounting seat 600 is embedded in the third through hole, the air inlet pipe 700 is disposed in a groove on the mounting seat 600, and the air inlet pipe 700 is opposite to the first exhaust portion 310. The intake duct 700 has a plurality of air outlets on an outer circumferential surface thereof, and the plurality of air outlets face the first exhaust portion 310. The axis of the intake pipe 700 may be parallel to the axis of the chamber inner pipe 100.
While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (10)

1. A semiconductor thermal processing apparatus, comprising:
a chamber inner tube (100), the chamber inner tube (100) having an inner circumferential surface (101);
an exhaust pipe (200), the exhaust pipe (200) communicating with the chamber inner pipe (100);
the exhaust structure (300) is arranged on the inner peripheral surface (101), an exhaust cavity (400) is formed between the exhaust structure (300) and the chamber inner tube (100), the exhaust cavity (400) is communicated with the exhaust tube (200), an exhaust port is arranged on the exhaust structure (300), and the total exhaust area of the exhaust port is larger than a first preset area, so that gas in the chamber inner tube (100) flows into the exhaust cavity (400) in a diffusion manner.
2. The semiconductor thermal processing apparatus according to claim 1, wherein a wafer boat (800) is disposed in the chamber inner tube (100), the exhaust structure (300) includes a first exhaust portion (310), the first exhaust portion (310) is an arc-shaped structure and is disposed around the wafer boat (800), the first exhaust portion (310) is provided with a plurality of first exhaust ports (311) at intervals, and an axial center line of a cylinder in which the first exhaust portion (310) is located is collinear with an axial center line of a cylinder in which the chamber inner tube (100) is located.
3. The semiconductor thermal processing apparatus according to claim 2, wherein the exhaust structure (300) further comprises a second exhaust portion (320) and a third exhaust portion (330), the first exhaust portion (310) is connected to the chamber inner tube (100) through the second exhaust portion (320) and the third exhaust portion (330), respectively, the second exhaust portion (320) is provided with a second exhaust port (321), and the third exhaust portion (330) is provided with a third exhaust port (331).
4. The semiconductor thermal processing apparatus according to claim 3, wherein at least one of the second exhaust portion (320) and the third exhaust portion (330) is a flat plate structure, a plane of which is extended in a radial direction of the chamber inner tube (100); or the like, or, alternatively,
at least one of the second exhaust portion (320) and the third exhaust portion (330) is a flat plate structure, the plane of the flat plate structure is inclined relative to the radial direction of the chamber inner tube (100), and the included angle between the normal line of the intersection of the chamber inner tube (100) and the flat plate structure is an acute angle.
5. The semiconductor thermal processing apparatus according to claim 4, wherein the second exhaust portion (320) is a flat plate structure, a plurality of the second exhaust ports (321) are provided at intervals in a direction parallel to an axis of the chamber inner tube (100), and each of the second exhaust ports (321) penetrates the second exhaust portion (320) in a direction perpendicular to the second exhaust portion (320); and/or the presence of a gas in the gas,
the third exhaust part (330) is a flat plate structure, a plurality of third exhaust ports (331) are arranged at intervals in a direction parallel to the axis of the chamber inner tube (100), and each third exhaust port (331) penetrates through the third exhaust part (330) in a direction perpendicular to the third exhaust part (330).
6. The semiconductor thermal processing apparatus according to claim 2, wherein the plurality of first exhaust ports (311) are distributed in an array, and the first exhaust ports (311) penetrate the first exhaust portion (310) in a radial direction of the chamber inner tube (100).
7. The semiconductor thermal processing apparatus according to claim 2, wherein the first exhaust portion (310) corresponds to a central angle of 120 ° to 180 °.
8. The semiconductor thermal processing apparatus according to claim 1, wherein both ends of the gas exhaust structure (300) in the axial direction of the chamber inner tube (100) are a first end extending to one end of the chamber inner tube (100) and a second end extending to the other end of the chamber inner tube (100), respectively.
9. The semiconductor thermal processing apparatus according to claim 1, further comprising an outer chamber tube (500), wherein the outer chamber tube (500) is sleeved outside the inner chamber tube (100);
one end of the exhaust pipe (200) penetrates through the pipe wall on one side of the outer chamber pipe (500) and is connected with the inner chamber pipe (100).
10. The semiconductor thermal processing apparatus according to claim 1, further comprising a top cover and a bottom plate, wherein the two ends of the exhaust structure (300) in the axial direction of the chamber inner tube (100) are a first end and a second end, respectively, the top cover is disposed at the first end, the bottom plate is disposed at the second end, and the top cover is opposite to the bottom plate.
CN202210490587.3A 2022-05-07 2022-05-07 Semiconductor heat treatment equipment Pending CN114883221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210490587.3A CN114883221A (en) 2022-05-07 2022-05-07 Semiconductor heat treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210490587.3A CN114883221A (en) 2022-05-07 2022-05-07 Semiconductor heat treatment equipment

Publications (1)

Publication Number Publication Date
CN114883221A true CN114883221A (en) 2022-08-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210490587.3A Pending CN114883221A (en) 2022-05-07 2022-05-07 Semiconductor heat treatment equipment

Country Status (1)

Country Link
CN (1) CN114883221A (en)

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