CN214152877U - Groove type insulated gate bipolar transistor packaging structure - Google Patents

Groove type insulated gate bipolar transistor packaging structure Download PDF

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Publication number
CN214152877U
CN214152877U CN202120512861.3U CN202120512861U CN214152877U CN 214152877 U CN214152877 U CN 214152877U CN 202120512861 U CN202120512861 U CN 202120512861U CN 214152877 U CN214152877 U CN 214152877U
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Prior art keywords
fixedly connected
heat
casing
shell
clamping
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CN202120512861.3U
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胡健峰
何海洋
彭强
梁金
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Wuxi Ciao Microelectronics Technology Co ltd
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Wuxi Ciao Microelectronics Technology Co ltd
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Abstract

The utility model belongs to the technical field of the transistor package, especially, be a ditch cell type insulated gate bipolar transistor packaging structure, which comprises a lower casing, the upper end lateral wall fixedly connected with otic placode of casing down, the earhole has been seted up on the otic placode, the first fixture block of the lower extreme lateral wall fixedly connected with of casing down, the internal chip that is equipped with of inferior valve, the downside of chip is equipped with three pin, the upside of casing is equipped with the casing down, it passes through screw and lower casing fixed connection to go up the casing, fixedly connected with and first fixture block assorted second fixture block on the lower extreme lateral wall of last casing. The utility model discloses a set up down the casing, go up casing, first fixture block, second fixture block, screw, heat-conducting plate, radiating fin, heat conduction post, heat transfer plate and heat conduction silicone grease layer, conveniently install and dismantle, make things convenient for maintenance personal to maintain, avoid the waste of resource, heat dispersion is better, avoids producing the phenomenon of damage because of high temperature, and the practicality is strong.

Description

Groove type insulated gate bipolar transistor packaging structure
Technical Field
The utility model relates to a transistor packaging technology field specifically is a trench type insulated gate bipolar transistor packaging structure.
Background
An Insulated Gate Bipolar Transistor (IGBT for short) is mainly applied to the fields of alternating current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like of variable frequency air conditioners. Because the IGBT is actually a circuit switch, and is used for strong currents of several hundred to several thousand volts and several tens to several hundreds amperes, its reliability level is much higher than that of ordinary consumer electronics. The IGBT process technology comprises two types: planar (planar) and trench (trench) structures. The groove type structure is a novel technology, and on the basis of not influencing any other electrical characteristics, the unit density of the unit is improved, and further the conduction loss is greatly improved. Therefore, the trench type IGBT is thinner, higher in current density, and lower in cost than the planar type IGBT.
At present, trench type insulated gate bipolar transistor packaging structure among the prior art is inconvenient after the encapsulation dismantles, if the inconvenient maintenance personal of phenomenon that takes place the damage maintains, causes the waste of resource easily, and trench type insulated gate bipolar transistor packaging structure among the prior art's heat dispersion is poor simultaneously, and at the in-process of using, inconvenient derives the heat, leads to trench type insulated gate bipolar transistor's damage easily, and the practicality is not good.
SUMMERY OF THE UTILITY MODEL
Technical problem to be solved
Not enough to prior art, the utility model provides a ditch cell type insulated gate bipolar transistor packaging structure has solved the trench type insulated gate bipolar transistor packaging structure among the prior art and has conveniently dismantled maintenance and the not good problem of heat dispersion.
The second technical proposal.
In order to achieve the above object, the utility model provides a following technical scheme: a groove-type insulated gate bipolar transistor packaging structure comprises a lower shell, wherein an ear plate is fixedly connected to the upper end side wall of the lower shell, an ear hole is formed in the ear plate, a first clamping block is fixedly connected to the lower end side wall of the lower shell, a chip is arranged in the lower shell, three pins are arranged on the lower side of the chip, an upper shell is arranged on the upper side of the lower shell, the upper shell is fixedly connected with the lower shell through screws, a second clamping block matched with the first clamping block is fixedly connected to the lower end side wall of the upper shell, a heat-conducting plate is fixedly connected to the upper end face of the upper shell, a group of radiating fins is fixedly connected to the upper end face of the heat-conducting plate, a group of through holes are formed in the upper end face of the upper shell, heat-conducting columns are arranged in the through holes in a matched mode, the top ends of the heat-conducting columns are fixedly connected with the heat-conducting plate, and heat-transfer plates are fixedly connected to the bottom ends of the heat-conducting columns, the lower end face of the heat transfer plate is fixedly connected with a heat conduction silicone grease layer, both ends of the lower end face of the upper shell are fixedly connected with clamping strips, and the lower shell is provided with clamping grooves matched with the clamping strips.
As an optimized technical scheme of the utility model, set up a set of louvre on the radiating fin, and the interval between the adjacent louvre is the same.
As a preferred technical scheme of the utility model, two card posts of lower terminal surface symmetry and fixedly connected with of second fixture block, be equipped with on the first fixture block with first card post assorted card hole.
As an optimized technical solution of the present invention, the heat conducting plate, the heat dissipating fins, the heat conducting columns and the heat transferring plate are made of copper material.
As an optimal technical scheme of the utility model, the pin passes through welding wire and chip fixed connection.
As an optimized technical scheme of the utility model, all be equipped with on lower casing and the last casing with screw assorted screw.
(III) advantageous effects
Compared with the prior art, the utility model provides a trench type insulated gate bipolar transistor packaging structure possesses following beneficial effect:
1. this slot type insulated gate bipolar transistor packaging structure through setting up down casing, last casing, first fixture block, second fixture block and screw, conveniently installs and dismantles slot type insulated gate bipolar transistor packaging structure, makes things convenient for maintenance personal to maintain, avoids the waste of resource, and the setting is simple, and the cost is lower, and the practicality is strong.
2. This slot type insulated gate bipolar transistor packaging structure through setting up heat-conducting plate, radiating fin, heat conduction post, heat transfer plate and heat conduction silicone grease layer, is showing the heat dispersion that improves slot type insulated gate bipolar transistor packaging structure, conveniently derives the heat, avoids slot type insulated gate bipolar transistor to damage because of the high temperature, and the practicality is better.
Drawings
FIG. 1 is a schematic structural view of the present invention;
fig. 2 is a schematic view of the internal structure of the lower case of the present invention;
fig. 3 is a schematic structural view of the upper housing of the present invention;
fig. 4 is a sectional view of the upper case of the present invention;
fig. 5 is a top view of the upper case of the present invention.
In the figure: 1. a lower housing; 2. an ear plate; 3. an ear hole; 4. a first clamping block; 5. a pin; 6. an upper housing; 7. a screw; 8. a second fixture block; 9. a heat conducting plate; 10. a heat dissipating fin; 11. heat dissipation holes; 12. a chip; 13. a card slot; 14. a clamping hole; 15. clamping the strip; 16. clamping the column; 17. a thermally conductive silicone layer; 18. a heat-conducting column; 19. a heat transfer plate.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Examples
Referring to fig. 1-5, the present invention provides the following technical solutions: a groove-type insulated gate bipolar transistor packaging structure comprises a lower shell 1, an ear plate 2 is fixedly connected to the upper end side wall of the lower shell 1, an ear hole 3 is formed in the ear plate 2, a first clamping block 4 is fixedly connected to the lower end side wall of the lower shell 1, a chip 12 is arranged in the lower shell 1, three pins 5 are arranged on the lower side of the chip 12, an upper shell 6 is arranged on the upper side of the lower shell 1, the upper shell 6 is fixedly connected with the lower shell 1 through a screw 7, a second clamping block 8 matched with the first clamping block 4 is fixedly connected to the lower end side wall of the upper shell 6, a heat conduction plate 9 is fixedly connected to the upper end face of the upper shell 6, a group of radiating fins 10 is fixedly connected to the upper end face of the heat conduction plate 9, a group of through holes are formed in the upper end face of the upper shell 6, heat conduction columns 18 are arranged in the through holes in a matched mode, the top ends of the heat conduction columns 18 are fixedly connected with the heat conduction plate 9, a heat transfer plate 19 is fixedly connected to the bottom ends of the heat conduction columns 18, the lower end face of the heat transfer plate 19 is fixedly connected with a heat conduction silicone grease layer 17, both ends of the lower end face of the upper shell 6 are fixedly connected with clamping strips 15, and the lower shell 1 is provided with clamping grooves 13 matched with the clamping strips 15.
In this embodiment, otic placode 2 conveniently installs, first fixture block 4 can cooperate second fixture block 8 to consolidate pin 5, improve pin 5's stability, screw 7 is convenient to be installed and is dismantled casing 1 and last casing 6 down, make things convenient for maintenance personal to maintain, avoid the waste of resource, the practicality is stronger, heat-conducting plate 9 is convenient to derive the heat, radiating fin 10 can derive the heat on the heat-conducting plate 9, improve radiating efficiency, heat conduction silicone grease layer 17 can absorb the heat, give heat transfer plate 19 with the heat transfer, heat transfer plate 19 rethread heat conduction post 18 carries out thermal derivation with the heat transfer for 9 heat-conducting plates, avoid the heat to gather in inside, avoid the damage of component, card strip 15 conveniently carries out accurate block with last casing 6 and lower casing 1, conveniently dismantle and assemble.
Specifically, a set of heat dissipation holes 11 is formed in the heat dissipation fin 10, and the distances between adjacent heat dissipation holes 11 are the same.
In this embodiment, the heat dissipation holes 11 can improve the heat dissipation performance of the heat dissipation fins 10, thereby improving the heat dissipation efficiency.
Specifically, the lower end surface of the second fixture block 8 is symmetrically and fixedly connected with two fixture posts 16, and the first fixture block 4 is provided with a fixture hole 14 matched with the first fixture post 16.
In this embodiment, the first engaging portion 4 and the second engaging portion 8 are engaged with each other by the engaging post 16, so that the stability is enhanced.
Specifically, the heat conductive plate 9, the heat radiating fins 10, the heat conductive columns 18, and the heat transfer plate 19 are made of a copper material.
In this embodiment, the heat conducting plate 9, the heat radiating fins 10, the heat conducting columns 18, and the heat conducting plate 19 are made of copper material, which has good heat conducting property, can improve the heat conducting property, and can reduce the cost.
Specifically, the lead 5 is fixedly connected to the chip 12 through a bonding wire.
In this embodiment, conveniently weld the use, conveniently encapsulate, set up simply, the practicality is strong.
Specifically, the lower shell 1 and the upper shell 6 are both provided with screw holes matched with the screws 7.
In this embodiment, the screw makes things convenient for screw 7 to fix lower casing 1 and last casing 6, conveniently assembles and dismantles, makes things convenient for maintenance personal to maintain.
The utility model discloses a theory of operation and use flow: firstly, a chip 12 is placed in a lower shell 1, then pins 5 are respectively placed in the lower shell 1, then the chip 12 and the pins 5 are welded through welding wires, then an upper shell 6 and the lower shell 1 are clamped, a clamping strip 15 is inserted into a clamping groove 13, then the lower shell 1 and the upper shell 6 are fixed through a screw 7, when the heat-conducting plate 19 is used, the heat-conducting plate 9 radiates part of heat, and then part of heat is radiated to a radiating fin 10 to radiate the heat, and the heat-radiating effect is remarkable.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing embodiments, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (6)

1. The utility model provides a trench type insulated gate bipolar transistor packaging structure, includes lower casing (1), its characterized in that: the upper end side wall of the lower shell (1) is fixedly connected with an ear plate (2), the ear plate (2) is provided with an ear hole (3), the lower end side wall of the lower shell (1) is fixedly connected with a first clamping block (4), a chip (12) is arranged in the lower shell (1), the lower side of the chip (12) is provided with three pins (5), the upper side of the lower shell (1) is provided with an upper shell (6), the upper shell (6) is fixedly connected with the lower shell (1) through screws (7), the lower end side wall of the upper shell (6) is fixedly connected with a second clamping block (8) matched with the first clamping block (4), the upper end surface of the upper shell (6) is fixedly connected with a heat-conducting plate (9), the upper end surface of the heat-conducting plate (9) is fixedly connected with a group of radiating fins (10), and the upper end surface of the upper shell (6) is provided with a group of through holes, and a heat conduction column (18) is arranged in the through hole in a matching manner, the top end of the heat conduction column (18) is fixedly connected with the heat conduction plate (9), the bottom end of the heat conduction column (18) is fixedly connected with a heat transfer plate (19), the lower end face of the heat transfer plate (19) is fixedly connected with a heat conduction silicone grease layer (17), both ends of the lower end face of the upper shell (6) are fixedly connected with clamping strips (15), and a clamping groove (13) matched with the clamping strips (15) is formed in the lower shell (1).
2. The trench-type igbt package structure of claim 1, wherein: a group of radiating holes (11) are formed in the radiating fins (10), and the distances between every two adjacent radiating holes (11) are the same.
3. The trench-type igbt package structure of claim 1, wherein: the lower end face of the second clamping block (8) is symmetrically and fixedly connected with two clamping columns (16), and clamping holes (14) matched with the first clamping columns (16) are formed in the first clamping block (4).
4. The trench-type igbt package structure of claim 1, wherein: the heat conducting plate (9), the radiating fins (10), the heat conducting columns (18) and the heat conducting plates (19) are made of copper materials.
5. The trench-type igbt package structure of claim 1, wherein: the pin (5) is fixedly connected with the chip (12) through a welding wire.
6. The trench-type igbt package structure of claim 1, wherein: and the lower shell (1) and the upper shell (6) are both provided with screw holes matched with the screws (7).
CN202120512861.3U 2021-03-10 2021-03-10 Groove type insulated gate bipolar transistor packaging structure Active CN214152877U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202120512861.3U CN214152877U (en) 2021-03-10 2021-03-10 Groove type insulated gate bipolar transistor packaging structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202120512861.3U CN214152877U (en) 2021-03-10 2021-03-10 Groove type insulated gate bipolar transistor packaging structure

Publications (1)

Publication Number Publication Date
CN214152877U true CN214152877U (en) 2021-09-07

Family

ID=77554382

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202120512861.3U Active CN214152877U (en) 2021-03-10 2021-03-10 Groove type insulated gate bipolar transistor packaging structure

Country Status (1)

Country Link
CN (1) CN214152877U (en)

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