CN213934111U

CN213934111U - Semiconductor laser chip aging device

Info

Publication number: CN213934111U
Application number: CN202023069820.6U
Authority: CN
Inventors: 王洁; 鞠兵; 赖人铭
Original assignee: Chengdu Yingsijia Semiconductor Technology Co ltd
Current assignee: Chengdu Yingsijia Semiconductor Technology Co ltd
Priority date: 2020-12-18
Filing date: 2020-12-18
Publication date: 2021-08-10
Anticipated expiration: 2030-12-18

Abstract

The utility model relates to a semiconductor laser technical field, concretely relates to semiconductor laser chip aging device, the device includes: the semiconductor laser chip aging fixture comprises an aging fixture and a lead device fixed on the aging fixture, wherein the aging fixture is used for fixing a ceramic substrate with a semiconductor laser chip; the lead device is fixed on the aging clamp and comprises a probe ceramic substrate, a first probe and a second probe, wherein two metal layers which are insulated from each other are arranged on the probe ceramic substrate, and the first probe and the second probe are respectively electrically connected with the two metal layers and are used for providing aging current for the semiconductor laser chip. The beneficial effects are that: the metal layer connecting the cathode and the anode of the semiconductor laser chip on the ceramic substrate can be smaller, less interference and reflection are introduced into the high-speed optical device, and the bandwidth of the high-speed optical device is improved.

Description

Semiconductor laser chip aging device

Technical Field

The utility model relates to a semiconductor laser technical field, concretely relates to semiconductor laser chip aging device.

Background

At present, optical signal emitting devices (optical devices) for high-speed optical fiber communication use semiconductor laser chips as signal light sources. And the semiconductor laser chip needs to be aged to screen out early failure. Only optical devices using semiconductor laser chips that are qualified for aging can be put into practical use formally. At present, two main aging processes for semiconductor laser chips are available in the industry, and one is to use pins on the optical device to access an aging current after the semiconductor laser chips are assembled into a complete optical device, so as to age the internal semiconductor laser chips. And in the other stage, in the early assembly stage of the optical device, the aging current is connected by utilizing the ceramic substrate welded with the semiconductor laser chip, and the semiconductor laser chip is aged in advance. Compared with the prior aging process, the process can save a large amount of optical device materials and reduce the cost. At present, the technology of directly carrying out semiconductor laser chip aging on a ceramic substrate is generally applied in the industry.

The semiconductor laser chip aging process on the ceramic substrate needs to introduce the anode and the cathode of the semiconductor laser chip to the metal layer of the ceramic substrate for aging, and then connect the metal layer with a probe to connect the aging current. Because the precision of the ceramic substrate aging clamp and the probe is limited, the area of the metal layer needs to be larger, and the probe can be accurately pricked on the metal layer in the aging process. However, in the current high-speed optical device, the metal layer with a large area connected to the anode and the cathode of the semiconductor laser chip often causes impedance mismatching of the signal line and introduces unnecessary signal reflection, which limits the use bandwidth of the optical device.

The patent "an aging apparatus and an aging method of a laser chip" (publication number CN 109324213) provides an aging apparatus and an aging method of a laser chip, wherein the apparatus includes a jig for holding a chip assembly, the chip assembly includes a laser chip and a chip carrier, the laser chip is fixed on the surface of the chip carrier; the fixture comprises a base, and a PCB connecting plate, a positioning plate and a pressing block which are sequentially arranged on the base, wherein the positioning plate is used for placing and positioning the chip assembly, and the PCB connecting plate is used for connecting the laser chip with a power supply circuit; the pressing block is movably arranged on the surface of the base, one end of the pressing block is positioned above the positioning plate, and the chip assembly can be pressed or loosened by rotating the pressing block. Through fixing the laser chip and pasting the dress on the chip carrier, can directly with anchor clamps convenient and fast, reliable and stable, accurately when ageing centre gripping chip carrier, realize that the chip presss from both sides and gets, reduce the chip damage, and anchor clamps easy operation, with low costs, can use repeatedly, solved the ageing difficult problem of chip. However, this solution still presents problems: the area of the metal layer of the ceramic substrate used for aging is large, impedance mismatching of a signal circuit is caused, unnecessary signal reflection is introduced, and the use bandwidth of an optical device is limited.

Disclosure of Invention

The utility model aims to overcome the above-mentioned not enough that exists among the prior art, for the area that reduces the metal level of connecting semiconductor laser chip negative pole and positive pole, provided a semiconductor laser chip aging device and ageing method.

In order to realize the purpose of the utility model, the utility model provides a following technical scheme:

a semiconductor laser chip burn-in apparatus comprising: a burn-in jig 1 and a lead wire device fixed to the burn-in jig 1,

the aging clamp 1 is used for fixing a ceramic substrate 2 with a semiconductor laser chip 3;

the lead device is fixed on the aging clamp 1 and comprises a probe ceramic substrate 4, a first probe 5 and a second probe 6, wherein two metal layers which are insulated from each other are arranged on the probe ceramic substrate 4, and the first probe 5 and the second probe 6 are respectively electrically connected with the two metal layers and used for providing aging current for the semiconductor laser chip 3.

Preferably, the probe ceramic substrate 4 is a cube, and two metal layers insulated from each other are located on the upper surface of the probe ceramic substrate.

Preferably, the upper surface of the cube is parallel to the plane of the aging jig 1, and the two metal layers are divided into two parts by the insulation groove: a third metal layer 41 and a fourth metal layer 42.

Preferably, the first probe 5 is perpendicular to the third metal layer 41, and the second probe 6 is perpendicular to the fourth metal layer 42.

Preferably, the ceramic substrate 2 has two metal layers insulated from each other, one for connection to a first pole of the semiconductor laser chip 3 and the other for connection to a second pole of the chip by a first gold wire.

Preferably, the device further comprises a second gold wire, and the second gold wire is used for electrically connecting the first probe 5 and the second probe 6 with the two metal layers respectively.

Preferably, the aging fixture 1 is provided with a groove structure, and the ceramic substrate 2 with the semiconductor laser chip 3 is fixed in the groove structure.

Preferably, the ceramic substrate 2 is fixed in the groove structure by means of elastic clips 11.

Preferably, the lead means is arranged inside the groove structure, outside the groove structure or partly inside the groove structure.

Preferably, the lead device is adhered to the aging jig 1 by glue.

Compared with the prior art, the beneficial effects of the utility model are that:

1. the utility model provides an ageing device of semiconductor laser chip can guarantee that the metal level of connecting semiconductor laser chip negative pole and positive pole on the ceramic substrate is littleer, introduces interference and reflection still less in high-speed optical device, improves the bandwidth of high-speed optical device.

2. The third metal layer 41 and the fourth metal layer 42 on the probe ceramic substrate can be large enough, so that the probe can be accurately pricked on the metal layers, and the aging process is simplified.

Description of the drawings:

fig. 1 is a schematic view of an operating principle of a semiconductor laser chip aging apparatus in embodiment 1 of the present invention;

fig. 2 is a structural diagram of a wire leading device in embodiment 1 of the present invention;

fig. 3 is a structural view of a ceramic substrate with a semiconductor laser chip in embodiment 1 of the present invention.

Description of the labeling: 1-an aging clamp, 2-a ceramic substrate, 21-a first metal layer, 22-a second metal layer, 3-a semiconductor laser chip, 4-a probe ceramic substrate, 41-a third metal layer, 42-a fourth metal layer, 5-a first probe, 6-a second probe, 7-a first gold wire, 8-a second gold wire, 9-a third gold wire and 11-an elastic card.

Detailed Description

The present invention will be described in further detail with reference to test examples and specific embodiments. However, it should not be understood that the scope of the above-mentioned subject matter is limited to the following embodiments, and all the technologies realized based on the present invention are within the scope of the present invention.

Example 1

A semiconductor laser chip aging device mainly comprises: the semiconductor laser chip aging device comprises an aging clamp 1 and a lead device fixed on the aging clamp 1, wherein the aging clamp is used for fixing a ceramic substrate 2 with a semiconductor laser chip 3; the lead device fixed on the aging clamp 1 comprises a probe ceramic substrate 4, a first probe 5 and a second probe 6, wherein two metal layers which are mutually insulated are arranged on the probe ceramic substrate 4: the first probe 5 and the second probe 6, and the first probe 5 and the second probe 6 are respectively electrically connected with two metal layers on the probe ceramic substrate 4. Before aging, the cathode and the anode of the semiconductor laser chip 3 are respectively led out through a lead device, and power is supplied to the semiconductor laser chip 3 through the lead device to perform an aging test of the semiconductor laser chip 3.

As the preferred scheme of the utility model, probe ceramic substrate 4 is the cube structure, and it is insulating that there are two metal levels of mutual insulation to realize through insulating recess on probe ceramic substrate 4, and two metals of mutual insulation are third metal level 41 and fourth metal level 42.

Preferably, the probe ceramic substrate 4 is a cuboid or a cube, the upper surface of the probe ceramic substrate 4 is parallel to the plane of the aging fixture 1, the first probe 5 is perpendicular to the third metal layer 41, and the second probe 6 is perpendicular to the fourth metal layer 42.

The areas of the two mutually insulated metal layers on the upper surface of the probe ceramic substrate 4 can be equal or unequal, and as a preferred scheme, the metal layer on the upper surface of the probe ceramic substrate 4 is equally divided into two parts with equal areas by the insulation groove.

Further, when the ceramic substrate 2 with the semiconductor laser chip 3 is fixed on the aging jig, the anode of the semiconductor laser chip 3 is connected to the third metal layer 41, and the cathode of the semiconductor laser chip 3 is connected to the fourth metal layer 42 (or the anode of the semiconductor laser chip 3 is connected to the fourth metal layer 42 and the cathode of the semiconductor laser chip 3 is connected to the third metal layer 41), since the first probe 5 is electrically connected to the third metal layer 41 and the second probe 6 is electrically connected to the fourth metal layer 42, the first probe 5 and the second probe 6 can supply power to the anode and the cathode of the semiconductor laser chip 3 after being respectively connected to an external power supply, and a current for aging the semiconductor laser chip 3 can be introduced.

Preferably, as shown in fig. 3, the ceramic substrate 2 has a first metal layer 21 and a second metal layer 22, and the cathode (or anode) of the semiconductor laser chip 3 is eutectic-welded to the first metal layer 21 and suspended by the anode (or cathode) at the other end of the corresponding semiconductor laser chip 3. When the electrodes of the semiconductor laser chip 3 and the metal layers of the lead device are connected by gold wires, the first metal layer 21 is electrically connected to the third metal layer 41 by the second gold wire 8, the suspended one-end electrode is electrically connected to the second metal layer 22 by the first gold wire 7, and the second metal layer 22 is electrically connected to the fourth metal layer 42 by the third gold wire 9.

Preferably, as shown in fig. 1, the aging jig 1 is provided with a groove structure, the ceramic substrate 2 with the semiconductor laser chip 3 is placed in the groove structure, and then the ceramic substrate 2 is fixed in the groove structure by the elastic clamping piece 11.

As preferred scheme, the lead device sets up in groove structure inside, groove structure outside or partly in groove structure inside, and the lead device bonds on ageing anchor clamps 1 through glue, and the position of setting can be adjusted according to ceramic substrate 2's size, and the purpose is to reduce the length of gold thread.

The function of the above structure can be further described in detail by the following steps of a semiconductor laser chip aging method:

the ceramic substrate 2 with the semiconductor laser chip 3 is fixed on the aging fixture 1 in the manner shown in fig. 1, and the first metal layer 21 and the second metal layer 22 on the ceramic substrate 2 are connected with the third metal layer 41 and the fourth metal layer 42 on the probe ceramic substrate 4 through the second gold wire 8 and the third gold wire 9, respectively.

The first probe 5 and the second probe 6 are respectively tied on the third metal layer 41 and the fourth metal layer 42 on the probe ceramic substrate 4, the first probe 5 and the second probe 6 are respectively connected with the cathode and the anode of an external power supply, and a current for aging the semiconductor laser chip 3 is introduced to start an aging test.

After the aging test is finished, the

gold wires

8 and 9 are respectively picked up, the elastic card 11 on the aging clamp 1 is loosened, and the ceramic substrate 2 is taken out. And then placing the next ceramic substrate 2 with the semiconductor laser chip 3 into the aging fixture 1 for aging test, wherein

gold wires

7, 8 and 9 need to be bonded again, and the lead device can be reused.

The above description is only exemplary of the present invention and should not be construed as limiting the present invention, and any modifications, equivalents and improvements made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.

Claims

1. A semiconductor laser chip aging apparatus, comprising: an aging clamp (1) and a lead device fixed on the aging clamp (1),

the aging clamp (1) is used for fixing a ceramic substrate (2) with a semiconductor laser chip (3);

the lead device is fixed on an aging clamp (1) and comprises a probe ceramic substrate (4), a first probe (5) and a second probe (6), wherein two metal layers which are insulated from each other are arranged on the probe ceramic substrate (4), and the first probe (5) and the second probe (6) are respectively electrically connected with the two metal layers and used for providing aging current for the semiconductor laser chip (3).

2. A semiconductor laser chip burn-in apparatus as claimed in claim 1,

the probe ceramic substrate (4) is cubic, and the two mutually insulated metal layers are positioned on the upper surface of the probe ceramic substrate.

3. A semiconductor laser chip burn-in apparatus as claimed in claim 2, wherein the upper surface of said cube is parallel to the plane of the burn-in fixture (1), and said two metal layers are divided into two parts by an insulating groove: a third metal layer (41) and a fourth metal layer (42).

4. A semiconductor laser chip burn-in apparatus as claimed in claim 3, wherein said first probe (5) is perpendicular to said third metal layer (41) and said second probe (6) is perpendicular to said fourth metal layer (42).

5. A semiconductor laser chip burn-in apparatus as claimed in claim 4, characterized in that said ceramic substrate (2) has two mutually insulated metal layers, one for connection to a first pole of said semiconductor laser chip (3) and the other for connection to a second pole of the chip by means of first gold wires.

6. A semiconductor laser chip burn-in apparatus as claimed in any one of claims 1 to 5 further comprising second gold wires for electrically connecting said first probe (5) and second probe (6) to said two metal layers, respectively.

7. A semiconductor laser chip burn-in apparatus as claimed in claim 6, characterized in that the burn-in jig (1) is provided with a groove structure, and the ceramic substrate (2) with the semiconductor laser chip (3) is fixed inside the groove structure.

8. A semiconductor laser chip burn-in apparatus as claimed in claim 7, characterized in that said ceramic substrate (2) is held in said recess structure by means of a resilient clip (11).

9. A semiconductor laser chip burn-in apparatus as claimed in claim 8 wherein said wire means is disposed within said groove structure, outside of said groove structure or partially within said groove structure.

10. A semiconductor laser chip burn-in apparatus as claimed in claim 9, wherein said lead means is attached to said burn-in jig (1) by glue.