CN213866409U - Vertical photovoltaic cell passivation deposition device - Google Patents
Vertical photovoltaic cell passivation deposition device Download PDFInfo
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- CN213866409U CN213866409U CN202023231522.2U CN202023231522U CN213866409U CN 213866409 U CN213866409 U CN 213866409U CN 202023231522 U CN202023231522 U CN 202023231522U CN 213866409 U CN213866409 U CN 213866409U
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Abstract
The utility model discloses a vertical photovoltaic cell passivation deposition apparatus has the host computer room of a vertical setting, has the process chamber of a vertical setting in the host computer room at least, and the process chamber top is closely connected with the cavity upper cover through upper flange seal group, and bottom and outside gas treatment device intercommunication are supporting to use a plurality of graphite plates in the process chamber, and successive layer is stacked in the process chamber after bearing a plurality of silicon chip on every graphite plate. The utility model discloses the host computer room with a vertical setting has the process chamber of a vertical setting in the host computer room at least, realizes photovoltaic cell passivation technology through vertical process chamber. The device has the advantages of small occupied area, more reasonable layout, high intensive degree, improvement on production efficiency and reduction in production cost.
Description
Technical Field
The utility model belongs to the technical field of the photovoltaic cell passivation technique and specifically relates to a vertical photovoltaic cell passivation deposition device.
Background
At present, a photovoltaic cell passivation deposition process generally adopts horizontal equipment, such as horizontal PECVD equipment, wherein the horizontal PECVD equipment comprises a purification platform, a waste gas chamber, a furnace body cabinet, an air source vacuum cabinet and the like. The purification platform is provided with a boat pushing system, an automatic loading and unloading system and other mechanisms, the boat pushing system corresponds to the reaction tube and sends the graphite boat into the reaction tube, and the automatic loading and unloading system realizes the transportation of the graphite boat between the buffer storage frame and the boat pushing system. The furnace body cabinet is provided with a plurality of reaction chambers from bottom to top, and each reaction chamber is a vacuum thermal reaction container consisting of a heating furnace body, a quartz tube and a group of sealing flanges and is used for depositing a coating on a silicon wafer. The gas source vacuum cabinet is provided with a process gas system, a vacuum system, a radio frequency power supply cabinet and the like, each reaction tube is provided with an independent gas conveying system and a vacuum system, gas is fed from the front end of the process tube, the vacuum system comprises a dry vacuum pump, an air exhaust pipeline, a vacuum butterfly valve for adjusting the pressure in the tube and the like, and the radio frequency power supply is a part for providing electric energy for forming plasma in the reaction tube. The horizontal PECVD equipment has the defects of large occupied area, unreasonable layout, low intensive degree and the like, so that the production efficiency is low and the production cost is high.
SUMMERY OF THE UTILITY MODEL
The applicant aims at the defects of large occupied area, unreasonable layout, low integration degree, low production efficiency, high production cost and the like of the existing horizontal photovoltaic cell passivation and deposition equipment, and provides a vertical photovoltaic cell passivation and deposition device with a reasonable structure.
The utility model discloses the technical scheme who adopts as follows:
the utility model provides a vertical photovoltaic cell passivation deposition apparatus, has the host computer room of a vertical setting, has the process chamber of a vertical setting in the host computer room at least, and the process chamber top is covered closely with the cavity through upper flange seal group and is connected, and the bottom communicates with outside gas treatment device, and supporting a plurality of graphite plates that use are gone up to every graphite plate, and the successive layer is stacked in the process chamber behind bearing a plurality of silicon chip.
As a further improvement of the above technical solution:
the upper surface of the graphite plate is provided with a plurality of slide grooves, the slide grooves are formed by upper shallow grooves and groove bottom holes below the shallow grooves, the size of the upper shallow grooves of the slide grooves is larger than that of the groove bottom holes at the lower parts of the slide grooves, and a step is formed by the size difference of the upper shallow grooves and the groove bottom holes.
A pressing plate is placed above the slide glass groove, an upper opening corresponding to the groove bottom opening of the slide glass groove is formed in the middle of the pressing plate, and the size and the shape of the upper opening are consistent with those of the groove bottom opening of the slide glass groove.
The depth of the upper shallow groove of the slide groove is equal to or greater than the thicknesses of the two silicon wafers, and when the depth of the upper shallow groove is equal to the thicknesses of the two silicon wafers, the peripheral shape of the pressing plate is greater than the size of the upper shallow groove and covers the upper part of the upper shallow groove; when the depth of the upper shallow groove is larger than the thickness of the two silicon wafers, the outer periphery of the pressing plate is consistent with the upper shallow groove in shape and is contained and limited in the upper shallow groove.
An electrode groove for connecting electrode rods in series is arranged on the graphite disk.
When a plurality of graphite plates are vertically stacked, the graphite plates are alternately placed in a staggered manner, the electrode grooves of two adjacent front and back graphite plates are distributed in a staggered manner, the Nth graphite plate and the (N + 2) th graphite plate which is spaced by one graphite plate are overlapped in the vertical direction, the electrode grooves of the Nth graphite plate and the electrode grooves of the (N + 2) th graphite plate are opposite, and the electrode grooves are distributed on the same straight line.
When a plurality of graphite plates are vertically stacked, two groups of electrode grooves which are distributed along straight lines at different positions are formed, wherein one group of electrode grooves corresponds to the upper electrode rod and is connected in series by the upper electrode rod; the other group of electrode grooves corresponds to the lower electrode rods and are connected in series by the lower electrode rods.
The inner wall of the process chamber is a quartz liner tube, the periphery of the quartz liner tube is sleeved with a protective sleeve along the axial direction, and the outside of the protective sleeve is a heating furnace body.
The bottom end of the process chamber is tightly connected with the chamber lower cover through a lower flange sealing group, the gas treatment device is communicated into the process chamber through a gas pipe, and the gas pipe is connected to the bottom end or two ends of the process chamber and penetrates through the interior of the process chamber.
The gas pipe is divided into a first branch gas pipe and a second branch gas pipe, the first branch gas pipe is provided with a corresponding pre-pumping valve, the second branch gas pipe is sequentially provided with a butterfly valve, a vacuum gauge and a main pumping valve, and the two branch gas pipes are combined into a pipe before being introduced into the process chamber.
The utility model has the advantages as follows:
the utility model discloses the host computer room with a vertical setting has the process chamber of a vertical setting in the host computer room at least, and the process chamber top is connected closely with the cavity upper cover through upper flange seal group, and bottom and outside gas treatment device intercommunication are supporting to use a plurality of graphite plates in the process chamber, and the successive layer is stacked in the process chamber after bearing a plurality of silicon chip on every graphite plate, realizes photovoltaic cell passivation technology through vertical process chamber. The upper surface of the graphite plate is provided with a plurality of wafer carrying grooves, the size of an upper shallow groove of each wafer carrying groove is larger than that of a groove bottom opening of a lower portion of each wafer carrying groove, the peripheral edges of the silicon wafers are placed on the steps, the edges of the silicon wafers are supported by the steps, and the lower portions of the silicon wafers are exposed through the groove bottom openings. A pressing plate is placed above the slide glass groove, an upper opening corresponding to the groove bottom opening of the slide glass groove is formed in the middle of the pressing plate, and the size and the shape of the upper opening are consistent with those of the groove bottom opening of the slide glass groove. The upper silicon wafer is exposed through the upper opening and is coated by the process, and the lower silicon wafer is exposed downwards through the opening at the bottom of the wafer loading groove and is coated by the process.
Electrode grooves for connecting electrode rods in series are formed in the graphite disc to form two groups of electrode grooves which are distributed along straight lines at different positions, wherein one group of electrode grooves corresponds to the upper electrode rods and is connected in series by the upper electrode rods; the other group of electrode grooves corresponds to the lower electrode rods, and the lower electrode rods are connected in series to fully discharge the silicon wafer in the process chamber, so that the discharge operation in coating is realized. In addition, the inner wall of the process chamber is a quartz liner tube, the periphery of the quartz liner tube is sleeved with a protective sleeve tube along the axial direction, the outside of the protective sleeve tube is a heating furnace body, the process chamber can be more reliable through the protective sleeve tube, and the requirements of various process requirements can be met.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Figure 2 is a top view of a graphite disk.
Figure 3 is a schematic view of a graphite disc compression plate.
Fig. 4 is an enlarged view of a portion a in fig. 3.
In the figure: 1. a process chamber; 2. an upper flange seal assembly; 3. an upper cover of the chamber; 4. a lower flange seal assembly; 5. a chamber lower cover; 6. heating the furnace body; 7. a graphite plate; 8. a slide groove; 9. a step; 10. pressing a plate; 11. an electrode tank; 12. an upper electrode rod; 13. a lower electrode rod; 14. and (3) a silicon wafer.
Detailed Description
The following describes embodiments of the present invention with reference to the drawings.
As shown in figure 1, vertical photovoltaic cell passivation and deposition device host computer room that has a vertical setting, the indoor process chamber 1 that has a vertical setting at least of host computer, process chamber 1 top is through last flange seal group 2 and cavity upper cover 3 zonulae occludens, 1 bottom of process chamber is through lower flange seal group 4 and 5 zonulae occludens of cavity lower cover, the bottom communicates with outside gas treatment device. The inner wall of the process chamber 1 is a quartz liner tube, and the periphery of the quartz liner tube is a heating furnace body 6. The utility model discloses can also establish protective case along the axial cover in quartz liner pipe periphery, the wall layer structure of process chamber 1 can comprise protective case and quartz liner pipe promptly. The gas processing device is communicated into the process chamber 1 through a gas pipe, and the gas pipe can be connected to the bottom end or two ends of the process chamber 1 and penetrates into the process chamber 1. The gas pipe is divided into a first branch gas pipe and a second branch gas pipe by leading out two branch gas pipes by a pipeline of a vacuum pump, the first branch gas pipe is provided with a corresponding pre-pumping valve, the second branch gas pipe is sequentially provided with a butterfly valve, a vacuum gauge and a main pumping valve, the two branch gas pipes are combined into a pipeline before being introduced into the process cavity 1, and selective pumping is realized by the two branch gas pipes.
As shown in fig. 2 to 4, the vertical photovoltaic cell passivation deposition apparatus further includes a plurality of graphite plates 7 used in cooperation in the process chamber 1, and each graphite plate 7 bears a plurality of silicon wafers 14 and is stacked in the process chamber 1 layer by layer. A plurality of graphite disks 7 are stacked vertically in the process chamber 1 and are spaced apart from one another by support legs on the graphite disks 7. The graphite plate 7 is disc-shaped, the upper surface of the graphite plate 7 is provided with a plurality of slide grooves 8, for example, four slide grooves 8 are distributed along the circumference in an array manner, and the slide grooves 8 are square or circular. The slide groove 8 is composed of an upper shallow groove and a groove bottom opening below the shallow groove, the size of the upper shallow groove of the slide groove 8 is larger than that of the groove bottom opening of the lower portion, and a step 9 is formed by the size difference of the upper shallow groove and the groove bottom opening. When the silicon wafer 14 is not placed, the upper side and the lower side of the graphite plate 7 are communicated with each other through the wafer slots 8. When the silicon wafer 14 is placed, the peripheral edge of the silicon wafer 14 is placed on the step 9, the step 9 holds up the edge of the silicon wafer 14, and the lower side of the silicon wafer 14 is exposed through the opening at the bottom of the groove. The depth of the shallow groove at the upper part of the wafer carrying groove 8 can accommodate two silicon wafers 14 or the thickness of the shallow groove at the upper part of the wafer carrying groove 8 is larger than the thickness of the two silicon wafers 14, a pressing plate 10 is placed above the silicon wafers 14 at the upper part, the middle part of the pressing plate 10 is provided with an upper opening hole corresponding to the opening hole at the bottom of the wafer carrying groove 8, and the size and the shape of the upper opening hole are consistent with those of the opening hole at the bottom of the wafer carrying groove 8. Therefore, two upper and lower silicon wafers 14 are placed in one wafer carrying groove 8, the upper silicon wafer 14 is exposed through the upper opening hole and is subjected to process coating, and the lower silicon wafer 14 is exposed downward through the groove bottom opening hole of the wafer carrying groove 8 and is subjected to process coating. When the depth of the upper shallow groove is equal to the thickness of the two silicon wafers 14, the outer peripheral shape of the pressing plate 10 is larger than the size of the upper shallow groove, and covers the upper portion of the upper shallow groove. When the depth of the upper shallow groove is greater than the thickness of the two silicon wafers 14, the outer peripheral shape of the pressing plate 10 is consistent with the upper shallow groove, and the pressing plate can be accommodated and limited in the upper shallow groove.
Offer the electrode slot 11 that is used for concatenating the electrode pole on graphite plate 7, for example offer an outside open-ended electrode slot 11 on graphite plate 7's circumference, when a plurality of graphite plates 7 vertically stack in process chamber 1, graphite plate 7 misplaces in turn, two adjacent electrode slots 11 of graphite plate 7 distribute in a staggered way around promptly, and the N graphite plate 7 overlaps each other with the (N + 2) th graphite plate 7 of a graphite plate 7 of interval in vertical direction, and electrode slot 11 of the two is relative, distributes on same straight line. Therefore, when a plurality of graphite plates 7 are stacked together, two groups of electrode grooves 11 which are distributed along a straight line at different positions are formed. One group of the electrode grooves 11 corresponds to the upper electrode rod 12 and is connected in series by the upper electrode rod 12, and the other group of the electrode grooves 11 corresponds to the lower electrode rod 13 and is connected in series by the lower electrode rod 13. The root of the upper electrode rod 12 is arranged on the chamber upper cover 3, and the root of the lower electrode rod 13 is arranged on the chamber lower cover 5.
The above description is illustrative of the present invention and is not intended to limit the present invention, and the present invention may be modified in any manner without departing from the spirit of the present invention.
Claims (10)
1. The utility model provides a vertical photovoltaic cell passivation deposition apparatus which characterized in that: the device comprises a main machine chamber with a vertical arrangement, at least one process chamber (1) with a vertical arrangement is arranged in the main machine chamber, the top end of the process chamber (1) is tightly connected with an upper cover (3) of the chamber through an upper flange sealing group (2), the bottom end of the process chamber is communicated with an external gas treatment device, a plurality of graphite discs (7) are matched and used in the process chamber (1), and each graphite disc (7) bears a plurality of silicon wafers (14) and then is stacked in the process chamber (1) layer by layer.
2. The vertical photovoltaic cell passivating deposition apparatus of claim 1, wherein: the upper surface of the graphite plate (7) is provided with a plurality of slide grooves (8), the slide grooves (8) are formed by upper shallow grooves and groove bottom openings below the shallow grooves, the size of the upper shallow grooves of the slide grooves (8) is larger than that of the groove bottom openings of the lower parts, and the size difference of the upper shallow grooves and the groove bottom openings forms a step (9).
3. The vertical photovoltaic cell passivating deposition apparatus of claim 2, wherein: a pressing plate (10) is placed above the slide holder groove (8), an upper opening corresponding to the bottom opening of the slide holder groove (8) is formed in the middle of the pressing plate (10), and the size and the shape of the upper opening are consistent with those of the bottom opening of the slide holder groove (8).
4. The vertical photovoltaic cell passivating deposition apparatus of claim 3, wherein: the depth of the upper shallow groove of the wafer carrying groove (8) is equal to or greater than the thickness of the two silicon wafers (14), and when the depth of the upper shallow groove is equal to the thickness of the two silicon wafers (14), the outer peripheral shape of the pressing plate (10) is greater than the size of the upper shallow groove and covers the upper shallow groove; when the depth of the upper shallow groove is larger than the thickness of the two silicon wafers (14), the outer peripheral shape of the pressing plate (10) is consistent with that of the upper shallow groove, and the pressing plate is accommodated and limited in the upper shallow groove.
5. The vertical photovoltaic cell passivating deposition apparatus of claim 1, wherein: an electrode groove (11) for connecting electrode rods in series is arranged on the graphite disk (7).
6. The vertical photovoltaic cell passivation deposition apparatus of claim 5, characterized in that: when a plurality of graphite plates (7) are vertically stacked, the graphite plates (7) are alternately placed in a staggered manner, the electrode grooves (11) of the two adjacent front and back graphite plates (7) are distributed in a staggered manner, the Nth graphite plate (7) and the (N + 2) th graphite plate (7) of one graphite plate (7) at an interval are mutually stacked in the vertical direction, and the electrode grooves (11) of the Nth graphite plate (7) and the electrode grooves (11) of the two graphite plates are opposite and are distributed on the same straight line.
7. The vertical photovoltaic cell passivation deposition apparatus of claim 5, characterized in that: when the graphite plates (7) are vertically stacked, two groups of electrode grooves (11) which are distributed along a straight line at different positions are formed, wherein one group of electrode grooves (11) corresponds to the upper electrode rod (12) and is connected in series by the upper electrode rod (12); the other group of electrode grooves (11) correspond to the lower electrode rods (13) and are connected in series by the lower electrode rods (13).
8. The vertical photovoltaic cell passivating deposition apparatus of claim 1, wherein: the inner wall of the process chamber (1) is a quartz liner tube, the periphery of the quartz liner tube is axially sleeved with a protective sleeve, and the outside of the protective sleeve is a heating furnace body (6).
9. The vertical photovoltaic cell passivating deposition apparatus of claim 1, wherein: the bottom end of the process chamber (1) is tightly connected with a chamber lower cover (5) through a lower flange sealing group (4), a gas treatment device is communicated into the process chamber (1) through a gas pipe, and the gas pipe is connected to the bottom end or two ends of the process chamber (1) and penetrates into the process chamber (1).
10. The vertical photovoltaic cell passivating deposition apparatus of claim 9, wherein: the gas pipe is divided into a first branch gas pipe and a second branch gas pipe, the first branch gas pipe is provided with a corresponding pre-pumping valve, the second branch gas pipe is sequentially provided with a butterfly valve, a vacuum gauge and a main pumping valve, and the two branch gas pipes are combined into a pipe before being introduced into the process chamber (1).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202023231522.2U CN213866409U (en) | 2020-12-28 | 2020-12-28 | Vertical photovoltaic cell passivation deposition device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023231522.2U CN213866409U (en) | 2020-12-28 | 2020-12-28 | Vertical photovoltaic cell passivation deposition device |
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| CN213866409U true CN213866409U (en) | 2021-08-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112663030A (en) * | 2020-12-28 | 2021-04-16 | 无锡松煜科技有限公司 | Vertical photovoltaic cell passivation deposition device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112663030A (en) * | 2020-12-28 | 2021-04-16 | 无锡松煜科技有限公司 | Vertical photovoltaic cell passivation deposition device |
| CN112663030B (en) * | 2020-12-28 | 2024-08-02 | 无锡松煜科技有限公司 | Passivation deposition device for vertical photovoltaic cell |
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