CN102064095A - Semiconductor substrate processing equipment - Google Patents
Semiconductor substrate processing equipment Download PDFInfo
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- CN102064095A CN102064095A CN 201010573966 CN201010573966A CN102064095A CN 102064095 A CN102064095 A CN 102064095A CN 201010573966 CN201010573966 CN 201010573966 CN 201010573966 A CN201010573966 A CN 201010573966A CN 102064095 A CN102064095 A CN 102064095A
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- semiconductor substrate
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Abstract
The invention relates to semiconductor substrate processing equipment which mainly solves the problems of limited quantity of process chambers carried by each equipment and high production cost in the prior art. The equipment comprises a first atmosphere transmission area, a second atmosphere transmission area, process processing modules, and the like, wherein the first atmosphere transmission area further comprises a substrate load port and a substrate transmission mechanical device; the second atmosphere transmission area further comprises a substrate placement casket and a slide rail; each process processing module further comprises a buffer chamber and a process chamber; and the larger the length of the second atmosphere transmission area is, the more the connected process processing modules are, thus theoretically, the quantity of carried process processing modules is not limited. The equipment can be used for applying processing processes of chemical vapor deposition, atomic layer deposition, plasma etching, and the like to a semiconductor substrate. The equipment has the characteristics that more process processing modules can be carried and simultaneously used in parallel, the production speed of semiconductor devices can be increased, and the operation cost of manufacturers of the semiconductor devices can be reduced.
Description
Technical field
The present invention relates to processing device of semiconductor substrate.Especially relate to a kind of plateform system that is used on semiconductor device, carrying out PROCESS FOR TREATMENT.The present invention also can be used for equipment that the processing object with relatively large size is processed, for example solar cell process equipment and large-scale display panel process equipment.
Background technology
In recent years, the economy of semiconductor processing equipment and validity more and more come into one's own.In the semi-conductor industry field, generally (Cost of Ownership CoO) weighs with semiconductor device manufacturer's running cost for the economy of semiconductor processing equipment and validity.The factor that influences CoO has a lot, but the required floor space of the output of semiconductor processing equipment and equipment is topmost influencing factor.Wherein the output of semiconductor processing equipment is meant the quantity of equipment time per unit substrate processing, and the required floor space of equipment then comprises the floor space and the required adjacent domain of maintenance of equipment of equipment.Except the processing speed of raising process for fabricating semiconductor device, the process chamber quantity that increase equipment is carried, these process chambers of parallel use also are a kind of effective ways that improve equipment yield.
Traditional semiconductor processing equipment platform generally includes atmosphere and transmits district, surge chamber, four parts such as vacuum substrate transfer chamber and process chamber.Atmosphere transmits the district and further comprises substrate load port and substrate transfer mechanism.Vacuum substrate transfer chamber further comprises the substrate transfer mechanism.Vacuum substrate transfer chamber is the polygon base with special shape, normally square, or regular hexagon, and wherein one side or both sides are connected with surge chamber, and all the other are connected with process chamber.Vacuum substrate transfer chamber with square shape base connects three process chambers of as many as usually, and the vacuum substrate transfer chamber with regular hexagon shape base at most also can only connect four or five process chambers.Like this, the process chamber quantity that can carry of every equipment is limited.
Summary of the invention
To the objective of the invention is in order solving the problems of the technologies described above, and to provide a kind of rational in infrastructure, can carry a plurality of process chambers, production efficiency is high is used for the equipment platform that semiconductor substrate is handled.
For achieving the above object, the present invention adopts following technical proposals: processing device of semiconductor substrate, comprise that first atmosphere transmits the district, and second atmosphere transmits three parts such as district and PROCESS FOR TREATMENT module.First atmosphere transmits the district and further comprises substrate load port and substrate transfer mechanism.Second atmosphere transmits the district and further comprises substrate placement casket and slide rail, and wherein substrate placement casket is arranged on the slide rail and can slides on slide rail.The PROCESS FOR TREATMENT module further comprises surge chamber and at least one process chamber, and wherein the front of surge chamber is transmitted to distinguish with second atmosphere and is connected, and its side or reverse side are connected with process chamber.Surge chamber in the PROCESS FOR TREATMENT module further comprises the substrate transfer mechanism.Second atmosphere transmits the district and has the rectangle base, and wherein short one side is transmitted the district with first atmosphere and is connected, and long both sides are connected with a plurality of PROCESS FOR TREATMENT modules.Second atmosphere transmits the district and can be connected with a plurality of PROCESS FOR TREATMENT modules, and the PROCESS FOR TREATMENT module can be adjacent to be arranged in the side that second atmosphere transmits the district, also can relatively be arranged in the both sides that second atmosphere transmits the district.The maximum quantity of the PROCESS FOR TREATMENT module that equipment can carry depends on that second atmosphere transmits the length in district, and the length that second atmosphere transmits the district is long more, and the PROCESS FOR TREATMENT module number that it can connect is also many more.Therefore, the process chamber quantity that can carry of equipment is unrestricted in theory.
The present invention can be used for to semiconductor substrate implement chemical vapour deposition (CVD) (ChemicalVapor Deposition, CVD), ald (Atomic Layer Deposition, ALD), and plasma etching processing technologys such as (ETCH).Have and can carry a plurality of process chambers, and can be by the characteristics of parallel use.The present invention is rational in infrastructure, and floor space is little, and the production efficiency height can reduce semiconductor device manufacturer's running cost effectively.Has good marketing prospect.
Description of drawings
Fig. 1 is the structural representation according to the processing device of semiconductor substrate in the embodiments of the invention 1.
Fig. 2 A is vertical view (a) and the end view (b) that transmits substrate placement box attitude one in the district according to second atmosphere in the embodiments of the invention 1.
Fig. 2 B is vertical view (a) and the end view (b) that transmits substrate placement box attitude two in the district according to second atmosphere in the embodiments of the invention 1.
Fig. 2 C is vertical view (a) and the end view (b) that transmits substrate placement box attitude three in the district according to second atmosphere in the embodiments of the invention 1.
Fig. 3 transmits between district and second atmosphere transmission district according to first atmosphere in the embodiments of the invention 1 to implement the schematic diagram that substrate transmits.
Fig. 4 transmits according to second atmosphere in the embodiments of the invention 1 to implement the schematic diagram that substrate transmits between district and the PROCESS FOR TREATMENT module.
Fig. 5 is the schematic cross-section that holds and process the plasma enhanced chemical gas phase membrane deposition chamber of two substrates according to time in the embodiments of the invention 1.
Fig. 6 is the structured flowchart that holds and process the plasma enhanced chemical gas phase membrane depositing system of two substrates according to time in the embodiments of the invention 1.
Fig. 7 is the structural representation according to the processing device of semiconductor substrate in the embodiments of the invention 2.
Fig. 8 is according to the schematic cross-section that holds and process the atom layer deposition process chamber of a substrate in the embodiments of the invention 2.
Fig. 9 is according to the structured flowchart that holds and process the atomic layer deposition system of a substrate in the embodiments of the invention 2.
Wherein: 1 first atmosphere transmits the district; 2 second atmosphere transmit the district; 3 PROCESS FOR TREATMENT modules; 4 surge chambers; 5 process chambers; 6 substrate load ports; 7 base plate transfer devices; 8 substrates are placed casket; 9 slide rails; 10 base plate transfer devices; 11 seam valves; 12 seam valves; 13 gas sources; 14 rf power system; 15 high-frequency radio-frequency power supplies; 16 low frequency radio-frequency power supplies; 17 adaptations; 18 pneumatic control systems; 19 barometers; 20 butterfly valves; 21 gate valves; 22 vacuum-pumping systems; 23 base plate supports framves; 24 rotating bases; 25 glide bases; 26 substrates; 27 valve with electrically motorized operations; 501 gas introduction ports; 502 radio frequency iontophoresis electrodes; 503 gas introducing mechanisms; 504 upper cover plates; 505 insulation materials; 506 pores; 507 cavitys; 508 substrates are supported platform; 509 heating arrangements; 510 bleeding points; 511 radio-frequency power feed-in lines; 512 gas distribution grids.
Embodiment
(see figure 1) in first kind of embodiment of the present invention, first atmosphere transmit district 1 and comprise three substrate load ports 6 and a base plate transfer device 7.Second atmosphere transmits district 2 and comprises a substrate placement casket 8 and a slide rail 9.Slide rail 9 is linearly to be arranged between two short limits that second atmosphere transmits district 2, and to transmit district 1 vertical with first atmosphere.Substrate is placed casket 8 and is arranged on the slide rail 9, can slide along slide rail 9.Second atmosphere transmits district 2 and has the rectangle base, and short one side is transmitted district 1 with first atmosphere and is connected, and long both sides are connected with at least two PROCESS FOR TREATMENT modules 3.The maximum quantity that second atmosphere transmits district's 2 PROCESS FOR TREATMENT modules 3 that can connect depends on that second atmosphere transmits the length in district 2.The length that second atmosphere transmits district 2 is long more, PROCESS FOR TREATMENT module 3 quantity that it can connect are many more, in the present embodiment, having four PROCESS FOR TREATMENT modules 3 is connected with second atmosphere transmission district 2, specifically be, respectively have two PROCESS FOR TREATMENT modules 3 to be adjacent to be arranged in second atmosphere and transmit long both sides, district 2, two PROCESS FOR TREATMENT modules 3 on each limit are relatively with the individual PROCESS FOR TREATMENT module 3 of another side arranges.Each PROCESS FOR TREATMENT module 3 comprises a surge chamber 4 and a process chamber 5A, distributes before and after being, and wherein surge chamber 4 is positioned at the front end of PROCESS FOR TREATMENT module 3, and is connected with second atmosphere transmission district 2.Surge chamber 4 comprises two base plate transfer devices 10.Each process chamber 5A can hold two substrates 26, and to its implementing process processing simultaneously.Above-mentioned surge chamber 4 and second atmosphere transmit 2 in district, and and process chamber 5A between be respectively equipped with gate valve 11 and 12.
Second atmosphere transmits substrate in the district 2 and places casket 8 multiple version can be arranged, and it is wherein a kind of that the substrate shown in Fig. 2 A is placed casket 8A, and it has two base plate supports framves 23 in the adjacent arrangement of sustained height, can place two substrates 26 simultaneously.The bottom that substrate is placed casket 8A is provided with rotating base 24 and glide base 25, and wherein rotating base 24 is arranged between substrate placement casket 8 bodies and the glide base 25, places casket 8 bodies with substrate and is fixed together, and can rotate mutually between the glide base 25.Glide base 25 is arranged between rotating base 24 and the slide rail 9, can slide on slide rail 9.Substrate is placed casket 8A and can be done original position rotation at any angle by rotating base 24 like this, also can slide on slide rail 9 by glide base 25.
When carrying out the transmission of substrate 26 between 1 and second atmosphere transmission district, first atmosphere transmission district 2, substrate is placed casket 8A and is slided to an end (see figure 3) that transmits district 1 near first atmosphere along slide rail 9, base plate transfer device 7 in first atmosphere transmission district 1 extends in second atmosphere transmission district 2 then, places upward loading or unloading substrate 26 of casket 8A from substrate.When second atmosphere transmits between district 2 and the PROCESS FOR TREATMENT module 3 transferring substrates 26, substrate is placed casket 8A and is slided front end (see figure 4) to PROCESS FOR TREATMENT module 3 along slide rail 9, base plate transfer device 10 in the surge chamber 4 of PROCESS FOR TREATMENT module 3 extends in second atmosphere transmission district 2 by the seam valve of opening 11 then, places casket 8A from substrate and goes up loading or unloading substrate 26.
Substrate is placed casket 8 can also other version, and the substrate shown in Fig. 2 B and 2C is placed casket 8B and 8C, has four base plate supports framves 23, is to arrange up and down or the adjacent arrangement of sustained height, can place 4 substrates 26 at most.
Fig. 5 is the schematic cross-section that is used for simultaneously two substrates 26 being implemented the process chamber 5A of plasma enhanced chemical vapor deposition, and Fig. 6 is the structured flowchart of its system.As illustrated in Figures 5 and 6, process chamber 5A is made up of upper cover plate 504 and cavity 507, and its top is provided with a gas introduction port 501, and its underpart is provided with a bleeding point 510, and its inside can hold two substrate 26a and 26b simultaneously.Each substrate 26 disposes 502, one gas introducing mechanisms 503 of a radio frequency iontophoresis electrode respectively and a substrate is supported platform 508.Wherein each radio frequency iontophoresis electrode 502 respectively the radio-frequency power feed-in line 511 by being embedded in insulation material 505 inside be connected with separately rf power system 14.Each rf power system comprises 15, one low frequency radio frequency power supplys 16 of a high-frequency radio frequency power supply and an adaptation 17.Radio-frequency power is directed into process chamber 5A inside by rf power system 14 by radio-frequency power feed-in line 511 and radio frequency iontophoresis electrode 502.Each gas introducing mechanism 503 is by upper cover plate 504, radio frequency iontophoresis electrode 502 and be arranged on radio frequency iontophoresis electrode 502 and upper cover plate 504 between insulation material 505 constitute.Offer the pore 506 of many up/down perforations on the radio frequency iontophoresis electrode 502, gas introducing mechanism 503 is by pore 506 and process chamber 5A internal run-through.The gas introducing mechanism 503a of two substrate 26a and 26b is connected with a gas source 13 with 503b.Specifically be that a gas source 13 is divided into two gas introduction port 501a and 501b then before this by a gas introduction port 501, is communicated with two gas introducing mechanism 503a and 503b respectively.Each substrate supports platform 508 inside to be respectively arranged with heating arrangements 509, can implement heating to contained substrate 26.The bleeding point 510 of process chamber 5A is connected with a vacuum-pumping system 22, pipeline between bleeding point 510 and the vacuum-pumping system 22 is provided with a barometer 19, a butterfly valve 20 and a gate valve 21, and wherein barometer 19 is arranged near bleeding point 510 places.By the air pressure control of the pneumatic control system that comprises barometer 19 and butterfly valve 20 to process chamber 5A.
(see figure 7) in second kind of embodiment of the present invention, first atmosphere transmit district 1 and comprise three substrate load ports 6 and a base plate transfer device 7.Second atmosphere transmits district 2 and comprises three substrates placement caskets 8 and a slide rail 9.Slide rail 9 is the loop wire shape and is arranged between two short limits that second atmosphere transmits district 2.Substrate is placed casket 8 and is arranged on the slide rail 9, can slide along slide rail 9.Second atmosphere transmits district 2 and has the rectangle base, and short one side is transmitted district 1 with first atmosphere and is connected, and long both sides are connected with at least two PROCESS FOR TREATMENT modules 3.The maximum quantity that second atmosphere transmits district's 2 PROCESS FOR TREATMENT modules 3 that can connect depends on that second atmosphere transmits the length in district 2.The length that second atmosphere transmits district 2 is long more, PROCESS FOR TREATMENT module 3 quantity that it can connect are many more, in the present embodiment, have two PROCESS FOR TREATMENT modules 3 and are connected with second atmosphere transmission district 2, specifically be that two PROCESS FOR TREATMENT modules 3 relatively are arranged in second atmosphere and transmit long both sides, district 2.Each PROCESS FOR TREATMENT module 3 comprises a surge chamber 4 and three process chambers 5, and one of them process chamber 5A can hold two substrates 26, and to its implementing process processing simultaneously, two other process chamber 5B can hold a substrate 26, and to its implementing process processing.Surge chamber 4 comprises two base plate transfer devices 10, and its front is transmitted district 2 with second atmosphere and is connected, and its reverse side is connected with process chamber 5A, and its side is connected with individual process chamber 5B respectively.Surge chamber 4 and second atmosphere transmit between the district 2, and and process chamber 5 between be respectively equipped with gate valve 11 and 12.
The substrate placement casket 8 that second atmosphere transmits in the district 2 can have multiple version, and its concrete version can be with reference to the description in first kind of embodiment of the present invention.
As shown in Figure 7, when carrying out the transmission of substrate 26 between 1 and second atmosphere transmission district, first atmosphere transmission district 2, a substrate is placed casket 8 and is slided to an end that transmits district 1 near first atmosphere along slide rail 9, base plate transfer device 7 in first atmosphere transmission district 1 extends in second atmosphere transmission district 2 then, places loading or unloading substrate 26 on the casket 8 from substrate.Simultaneously, two other substrate is placed casket 8 and is slided to the front end of two PROCESS FOR TREATMENT modules 3 along slide rail 9 respectively, base plate transfer device 10 in the surge chamber 4 extends in second atmosphere transmission district 2 by the seam valve of opening 11 then, places loading or unloading substrate 26 on the casket 8 from substrate.Can realize that like this first atmosphere transmits district's 1 and second atmosphere and transmits between the district 2, and two PROCESS FOR TREATMENT modules 3 and second atmosphere transmit distinguish 2 between transmission substrate 26 time.
Claims (13)
1. processing device of semiconductor substrate is characterized in that: it comprises one first atmosphere and transmits the district, and it has at least one substrate load port and a base plate transfer device; And one second atmosphere transmission district, it has one or more substrate and places casket and a slide rail; And at least one PROCESS FOR TREATMENT module, it has a surge chamber, with at least one process chamber, wherein said second atmosphere transmits the district and is connected in described first atmosphere transmission district, wherein said PROCESS FOR TREATMENT module is connected to described second atmosphere and transmits in the district, and the side by the surge chamber in the described PROCESS FOR TREATMENT module is connected with described second atmosphere transmission district, surge chamber in the wherein said PROCESS FOR TREATMENT module, it has one or more base plate transfer device, can place at least one substrate in the described process chamber.
2. processing device of semiconductor substrate according to claim 1, it is characterized in that: wherein first atmosphere transmits the described substrate load port of distinguishing and is arranged in the one side, described second atmosphere transmits the district and is connected its opposite side, described transporting substrates, device is set between the above-mentioned both sides, and is positioned at described first atmosphere transmission district.
3. processing device of semiconductor substrate according to claim 1 and 2, it is characterized in that: wherein second atmosphere transmits to distinguish and has the rectangle base, its short one side is transmitted the district with described first atmosphere and is connected, described slide rail is linearly to be arranged between its two short limits, and the district is vertical with described first atmosphere transmission, one or more described substrate is placed casket and is arranged on the described slide rail, and can slide on described slide rail.
4. processing device of semiconductor substrate according to claim 1 and 2, it is characterized in that: wherein second atmosphere transmits to distinguish and has the rectangle base, its short one side is transmitted the district with described first atmosphere and is connected, described slide rail is the loop wire shape and is arranged between its two short limits, one or more described substrate is placed casket and is arranged on the described slide rail, and can slide on described slide rail.
5. according to claim 1 and 3 or 4 described processing device of semiconductor substrate, it is characterized in that: the described substrate in wherein second atmosphere transmits and distinguishes is placed casket and is further comprised at least one base plate supports frame.
6. processing device of semiconductor substrate according to claim 1, it is characterized in that: wherein the length in second atmosphere transmission district can change, its length determines that by the quantity of connected described PROCESS FOR TREATMENT module the quantity of described PROCESS FOR TREATMENT module is unrestricted.
7. according to claim 1 and 6 described processing device of semiconductor substrate, it is characterized in that: wherein second atmosphere transmits a plurality of described PROCESS FOR TREATMENT module that the district connects and can one be arranged adjacent in the same side that it has longer sides point-blank, also can transmit the district and arrange the both sides that it has longer sides Face to face, and the quantity of described PROCESS FOR TREATMENT module can increase and increase along with described second atmosphere transmits the length of distinguishing across described second atmosphere.
8. processing device of semiconductor substrate according to claim 1 is characterized in that: the described surge chamber of PROCESS FOR TREATMENT module wherein, and its positive and described second atmosphere transmits to distinguish and is connected, and its side or reverse side are connected with described process chamber.
9. according to claim 1 or 8 described processing device of semiconductor substrate, it is characterized in that: wherein the described surge chamber of PROCESS FOR TREATMENT module has a gas introduction port, with a bleeding point, and described gas introduction port is connected with a gas source, and described bleeding point is connected with a vacuum-pumping system.
10. processing device of semiconductor substrate according to claim 1, it is characterized in that: wherein can place one or more substrates in the described process chamber of PROCESS FOR TREATMENT module, and simultaneously one or more described substrates be implemented plasma enhanced chemical vapor deposition.
11. according to claim 1 and 10 described processing device of semiconductor substrate, it is characterized in that: wherein the described process chamber of PROCESS FOR TREATMENT module has a gas introduction port, a pneumatic control system, with a bleeding point, and described gas introduction port is connected with a gas source, described bleeding point is connected with a vacuum-pumping system, and described pneumatic control system further comprises a barometer and a butterfly valve.
12. according to claim 1 and 10 described processing device of semiconductor substrate, it is characterized in that: wherein can place a plurality of substrates in the described process chamber of PROCESS FOR TREATMENT module, substrate disposes a radio frequency iontophoresis electrode under each, a gas introducing mechanism, a substrate is supported platform, and described substrate is supported to be provided with heating arrangements in the platform, can implement heating to described substrate.
13. according to claim 1,10 and 12 described processing device of semiconductor substrate, it is characterized in that: wherein the described radio frequency iontophoresis electrode of each of process chamber is connected with a rf power system, described rf power system comprises a high-frequency radio frequency power supply, a low frequency radio frequency power supply and an adaptation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010573966 CN102064095A (en) | 2010-12-03 | 2010-12-03 | Semiconductor substrate processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010573966 CN102064095A (en) | 2010-12-03 | 2010-12-03 | Semiconductor substrate processing equipment |
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| CN102064095A true CN102064095A (en) | 2011-05-18 |
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| CN 201010573966 Pending CN102064095A (en) | 2010-12-03 | 2010-12-03 | Semiconductor substrate processing equipment |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108346561A (en) * | 2018-02-09 | 2018-07-31 | 信利（惠州）智能显示有限公司 | Polysilicon layer processing method and processing system before gate insulating layer film forming |
| CN113195170A (en) * | 2018-12-11 | 2021-07-30 | 平田机工株式会社 | Substrate transfer apparatus and substrate transfer system |
| TWI819621B (en) * | 2022-05-23 | 2023-10-21 | 友威科技股份有限公司 | Contamination resistant continuous plasma process system |
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| CN1240939A (en) * | 1998-06-09 | 2000-01-12 | 株式会社爱德万测试 | Electronic component and device testing unit |
| US20030213431A1 (en) * | 2002-05-01 | 2003-11-20 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating apparatus |
| JP2007201416A (en) * | 2005-12-28 | 2007-08-09 | Fuji Mach Mfg Co Ltd | Component mounting system |
| CN101764050A (en) * | 2010-01-15 | 2010-06-30 | 刘忆军 | Processing device of semiconductor substrate |
| CN101767718A (en) * | 2009-01-03 | 2010-07-07 | 英属开曼群岛商精曜有限公司 | Method of transferring one or more substrates between process modules or between loading/unloading stations |
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2010
- 2010-12-03 CN CN 201010573966 patent/CN102064095A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1240939A (en) * | 1998-06-09 | 2000-01-12 | 株式会社爱德万测试 | Electronic component and device testing unit |
| US20030213431A1 (en) * | 2002-05-01 | 2003-11-20 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating apparatus |
| JP2007201416A (en) * | 2005-12-28 | 2007-08-09 | Fuji Mach Mfg Co Ltd | Component mounting system |
| CN101767718A (en) * | 2009-01-03 | 2010-07-07 | 英属开曼群岛商精曜有限公司 | Method of transferring one or more substrates between process modules or between loading/unloading stations |
| CN101764050A (en) * | 2010-01-15 | 2010-06-30 | 刘忆军 | Processing device of semiconductor substrate |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108346561A (en) * | 2018-02-09 | 2018-07-31 | 信利（惠州）智能显示有限公司 | Polysilicon layer processing method and processing system before gate insulating layer film forming |
| CN113195170A (en) * | 2018-12-11 | 2021-07-30 | 平田机工株式会社 | Substrate transfer apparatus and substrate transfer system |
| CN113195170B (en) * | 2018-12-11 | 2023-12-22 | 平田机工株式会社 | Substrate transfer apparatus and substrate transfer system |
| TWI819621B (en) * | 2022-05-23 | 2023-10-21 | 友威科技股份有限公司 | Contamination resistant continuous plasma process system |
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Application publication date: 20110518 |