CN101764050A - Processing device of semiconductor substrate - Google Patents
Processing device of semiconductor substrate Download PDFInfo
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- CN101764050A CN101764050A CN201010005335A CN201010005335A CN101764050A CN 101764050 A CN101764050 A CN 101764050A CN 201010005335 A CN201010005335 A CN 201010005335A CN 201010005335 A CN201010005335 A CN 201010005335A CN 101764050 A CN101764050 A CN 101764050A
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- 239000000758 substrate Substances 0.000 title claims abstract description 276
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 167
- 230000005540 biological transmission Effects 0.000 claims description 26
- 238000001816 cooling Methods 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000001020 plasma etching Methods 0.000 abstract description 2
- 238000000231 atomic layer deposition Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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Abstract
The invention relates to a processing device of a semiconductor substrate, mainly solving the problems of limited number of process chambers capable of carrying each device and high production cost in the prior art. The device comprises a first atmosphere conveying area, a second atmosphere conveying area, process processing modules, and the like, wherein the first atmosphere conveying area further comprises a substrate load port and a substrate conveying mechanical device; the second atmosphere conveying area further comprises a substrate placement table, a substrate conveying mechanical device and a sliding shaft; the sliding shaft is arranged between two shorter edges of the second atmosphere conveying area in a straight line state; and the longer the length of the second atmosphere conveying area is, the more the number of the processing process modules connected with the second atmosphere conveying area is, thus the number of process chambers capable of carrying the device is not limited in theory. The processing device can be used for carrying out processing processes such as chemical vapor deposition, atomic layer deposition, plasma etching, and the like on the semiconductor substrate and has the characteristics of capability of being carried by a plurality of process chambers, being used in parallel and reducing the operation cost of semiconductor device manufacturers.
Description
Technical field:
The present invention relates to processing device of semiconductor substrate.Especially relate to a kind of plateform system that is used on semiconductor device, carrying out PROCESS FOR TREATMENT.The present invention also can be used for equipment that the processing object with relatively large size is processed, for example solar cell process equipment and large-scale display panel process equipment.
Background technology:
In recent years, the economy of semiconductor processing equipment and validity more and more come into one's own.In the semi-conductor industry field, generally (Cost of Ownership CoO) weighs with semiconductor device manufacturer's running cost for the economy of semiconductor processing equipment and validity.The factor that influences CoO has a lot, but the required floor space of the output of semiconductor processing equipment and equipment is topmost influencing factor.Wherein the output of semiconductor processing equipment is meant the quantity of equipment time per unit substrate processing, and the required floor space of equipment then comprises the floor space and the required adjacent domain of maintenance of equipment of equipment.Except the processing speed of raising process for fabricating semiconductor device, the process chamber quantity that increase equipment is carried, these process chambers of parallel use also are a kind of effective ways that improve equipment yield.
Traditional semiconductor processing equipment platform generally includes first atmosphere and transmits district, surge chamber, four parts such as vacuum substrate transfer chamber and process chamber.First atmosphere transmits the district and further comprises substrate load port and substrate transfer mechanism.Vacuum substrate transfer chamber further comprises the substrate transfer mechanism.Vacuum substrate transfer chamber is the polygon base with special shape, normally square, or regular hexagon, and wherein one side or both sides are connected with surge chamber, and all the other are connected with process chamber.Vacuum substrate transfer chamber with square shape base connects three process chambers of as many as usually, and the vacuum substrate transfer chamber with regular hexagon shape base at most also can only connect four or five process chambers.Like this, the process chamber quantity that can carry of every equipment is limited.
Summary of the invention:
To the objective of the invention is in order solving the problems of the technologies described above, and to provide a kind of rational in infrastructure, can carry a plurality of process chambers, production efficiency is high is used for the equipment platform that semiconductor substrate is handled.
For achieving the above object, the present invention adopts following technical proposals: processing device of semiconductor substrate, comprise that first atmosphere transmits the district, and second atmosphere transmits three parts such as district and PROCESS FOR TREATMENT module.First atmosphere transmits the district and further comprises substrate load port and substrate transfer mechanism.Second atmosphere transmits the district and further comprises substrate mounting table, substrate transfer mechanism and sliding axle.Substrate mounting table is arranged on second atmosphere and transmits a side that transmits the district in the district near first atmosphere.Linearly second atmosphere that is arranged on of sliding axle transmits between two short limits distinguishing, and vertical with first atmosphere transmission district.Second atmosphere transmits the district and has the rectangle base, and wherein short one side is transmitted the district with first atmosphere and is connected, and long both sides are connected with a plurality of PROCESS FOR TREATMENT modules.Second atmosphere transmits the district and can be connected with a plurality of PROCESS FOR TREATMENT modules, and the PROCESS FOR TREATMENT module can be adjacent to be arranged in the side that second atmosphere transmits the district, also can relatively be arranged in the both sides that second atmosphere transmits the district.The PROCESS FOR TREATMENT module connects and further comprises two process chambers such as surge chamber and process chamber, distributes before and after being, and surge chamber wherein is positioned at the front end of PROCESS FOR TREATMENT module, and is connected with second atmosphere transmission district.Surge chamber in the PROCESS FOR TREATMENT module further comprises the substrate transfer mechanism.The maximum quantity of the PROCESS FOR TREATMENT module that equipment can carry depends on that second atmosphere transmits the length in district.The length that second atmosphere transmits the district is long more, and the PROCESS FOR TREATMENT module number that it can connect is also many more.Therefore, the process chamber quantity that can carry of equipment is unrestricted in theory.
The present invention can be used for semiconductor substrate is implemented chemical vapor deposition (CVD), ald (ALD), and plasma etching processing technologys such as (ETCH).Have and can carry a plurality of process chambers, and can be by the characteristics of parallel use.The present invention is rational in infrastructure, and floor space is little, and the production efficiency height can reduce semiconductor device manufacturer's running cost effectively, has good marketing prospect.
Figure of description:
Fig. 1 transmits the district by first atmosphere that has a monobasal conveyer, and second atmosphere that has a monobasal conveyer transmits the structural representation of the processing device of semiconductor substrate of district and a plurality of monobasal PROCESS FOR TREATMENT module composition.
Fig. 2 (a) is Ben Mingji plate mounting table transmits district or second atmosphere transmission district, one side towards first atmosphere a side structure schematic diagram.
Fig. 2 (b) is the side structure schematic diagram that the substrate mounting table of the present invention and first atmosphere transmit the vertical side in district.
Fig. 3 is that the present invention uses an interior monobasal conveyer of surge chamber to transmit the plan view of a substrate in the monobasal PROCESS FOR TREATMENT is indoor.
Fig. 4 transmits the district by first atmosphere that has a double-basis substrate transfer device, and second atmosphere that has a double-basis substrate transfer device transmits the structural representation of the processing device of semiconductor substrate of district and a plurality of double-basis plate PROCESS FOR TREATMENT module composition.
Fig. 5 is that the present invention uses an interior double-basis substrate transfer device of surge chamber to transmit the plan view of two substrates simultaneously in double-basis plate PROCESS FOR TREATMENT is indoor.
Fig. 6 transmits the district by first atmosphere that has a double-basis substrate transfer device, and second atmosphere that has a double-basis substrate transfer device transmits the structural representation of the processing device of semiconductor substrate of district and a plurality of tetrabasal PROCESS FOR TREATMENT module composition.
Fig. 7 is that the present invention uses two interior monobasal conveyers of surge chamber to transmit the plan view of two substrates simultaneously in the tetrabasal PROCESS FOR TREATMENT is indoor.
Embodiment
(see figure 1) in first kind of embodiment of the present invention, first atmosphere transmit district 8 and comprise at least two substrate load port ones and a monobasal conveyer 2a.Second atmosphere transmits district 10 and comprises substrate mounting table 3, one monobasal conveyers 4a and a sliding axle 5.Substrate mounting table 3 is arranged on second atmosphere and transmits a side that transmits district 8 in the district 10 near first atmosphere.Substrate mounting table 3 can be the combination [seeing Fig. 2 (a) and Fig. 2 (b)] of substrate orientation device 15 and substrate cooling bench 16, and promptly the orlop of substrate mounting table 3 is substrate orientation devices 15, is one or more substrate cooling benches 16 above the substrate orientation device 15.Sliding axle 5 is linearly to be arranged between two short limits that second atmosphere transmits district 10, and to transmit district 8 vertical with first atmosphere.Second atmosphere transmits district 10 and has the rectangle base, and short one side is transmitted district 8 with first atmosphere and is connected; Long both sides are connected with at least two monobasal PROCESS FOR TREATMENT modules 9.The maximum quantity that second atmosphere transmits district's 10 PROCESS FOR TREATMENT modules 9 that can connect depends on that second atmosphere transmits the length in district 10.The length that second atmosphere transmits district 10 is long more, and PROCESS FOR TREATMENT module 9 quantity that it can connect are many more.PROCESS FOR TREATMENT module 9 can be adjacent to be arranged in the side that second atmosphere transmits district 10, also can relatively be arranged in the both sides that second atmosphere transmits district 10.Each PROCESS FOR TREATMENT module 9 comprises a surge chamber 11 and a process chamber 12, distributes before and after being, and the surge chamber 11 that wherein is provided with monobasal conveyer 6a is positioned at the front end of PROCESS FOR TREATMENT module 9, and is connected with second atmosphere transmission district 10.Surge chamber 11 comprises a monobasal conveyer 6a.Each process chamber 12 can hold a substrate 7, and to this substrate 7 implementing process processing.The above-mentioned surge chamber 11 and second atmosphere transmit 10 in district, and 11 of process chamber 12 and surge chambers are respectively equipped with gate valve 13 and 14.
In this embodiment, during general operation, the monobasal conveyer 2a in [a] first atmosphere transmission district 8 is sent to a substrate 7 second atmosphere usually and transmits on the substrate mounting table of distinguishing in 10 3 from the substrate box that substrate load port one is placed, or carries out substrate orientation on the substrate orientation device 15.[b] second atmosphere transmits the monobasal conveyer 4a in district 10 from substrate mounting table 3, or mounting substrate 7 on the substrate orientation device 15, slides to the port of PROCESS FOR TREATMENT module 9 along sliding axle 5 then.When [c] is in atmospheric pressure state when the surge chamber in the PROCESS FOR TREATMENT module 9 11, the gate valve 13 that the surge chamber 11 and second atmosphere transmit between the district 10 can be opened, the monobasal conveyer 4a in second atmosphere transmission district 10 is delivering substrate 7 stretching, extensions and is entering in the surge chamber 11, unloads carried base board 7 then to the monobasal conveyer 6a of surge chamber 11.The gate valve 13 that [d] surge chamber 11 and second atmosphere transmit between the district 10 cuts out, when surge chamber 11 is evacuated to certain air pressure, gate valve 14 between surge chamber 11 and the process chamber 12 can be opened, and monobasal conveyer 6a is delivering substrate 7 stretching, extensions and entering (see figure 3)s in the process chamber 12.After the unloading infrabasal plate 7, monobasal conveyer 6a is retracted into surge chamber 11 in process chamber 12.[e] begins substrate 7 implementing process are processed in process chamber 12 after the gate valve 14 between surge chamber 11 and the process chamber 12 cuts out.After processes was finished, the gate valve 14 between surge chamber 11 and the process chamber 12 can be opened [f], and monobasal conveyer 6a stretches and enters in the process chamber 12, loads finished substrate 7, is retracted into surge chamber 11.[g] after the gate valve 14 between surge chamber 11 and the process chamber 12 cut out, surge chamber 11 began filling gass, and the pressure of surge chamber 11 rises.When [h] is in atmospheric pressure state when the surge chamber in the PROCESS FOR TREATMENT module 9 11, the gate valve 13 that the surge chamber 11 and second atmosphere transmit between the district 10 can be opened, the monobasal conveyer 4a stretching, extension that second atmosphere transmits district 10 enters in the surge chamber 11, on the monobasal conveyer 6a of surge chamber 11, finished substrate 7 is loaded on it, is retracted into second atmosphere then and transmits in the district 10.The monobasal conveyer 4a that [i] loading finished substrate 7 slides near substrate mounting table 3 along sliding axle 5, then finished substrate 7 is offloaded on the substrate cooling bench 16.[j] is last, and the monobasal conveyer 2a that first atmosphere transmits district 8 is sent to the finished substrate 7 on the substrate cooling bench 16 in the substrate box of placing on the substrate load port one.So far, equipment has been finished once the processes to semiconductor substrate.When equipment carries a plurality of PROCESS FOR TREATMENT module 9, first atmosphere that comprises at equipment transmits district 8, second atmosphere transmits district 10, with the process that repeats above-mentioned [a]-[j] in the PROCESS FOR TREATMENT module 9,9 pairs of semiconductor substrate 7 implementing process processing of a plurality of PROCESS FOR TREATMENT modules of can simultaneously parallel use equipment carrying.
Embodiment 2
(see figure 4) in second kind of embodiment of the present invention, first atmosphere transmit district 8 and comprise at least two substrate load port ones and a double-basis substrate transfer device 2b.This double-basis substrate transfer device 2b comprises two mechanical arms, can deliver and transmit two substrates 7 simultaneously.Second atmosphere transmits district 10 and comprises two substrate mounting table 3, one double-basis substrate transfer devices 4b and a sliding axle 5.These two substrate mounting tables 3 are arranged on second atmosphere and transmit sides of distinguishing close first atmosphere transmission district 8 in 10, adjacent arrangement, and it is parallel with first atmosphere transmission district 8 to be a straight line, and vertical with sliding axle 5.Substrate mounting table 3 can be the combination (see figure 2) of substrate orientation device 15 and substrate cooling bench 16, and promptly the orlop of substrate mounting table 3 is substrate orientation devices 15, is one or more substrate cooling benches 16 above the substrate orientation device.Double-basis substrate transfer device 4b comprises two mechanical arms, can deliver and transmit two substrates 7 simultaneously.Sliding axle 5 is linearly to be arranged between two short limits that second atmosphere transmits district 10, and to transmit district 8 vertical with first atmosphere.Second atmosphere transmits the district and has the rectangle base, and short one side is transmitted district 8 with first atmosphere and is connected; Long both sides are connected with at least two PROCESS FOR TREATMENT modules 9.The maximum quantity that second atmosphere transmits district's 10 PROCESS FOR TREATMENT modules 9 that can connect depends on that second atmosphere transmits the length in district 10.The length that second atmosphere transmits district 10 is long more, and PROCESS FOR TREATMENT module 9 quantity that it can connect are many more.PROCESS FOR TREATMENT module 9 can be adjacent to be arranged in the side that second atmosphere transmits district 10, also can relatively be arranged in the both sides that second atmosphere transmits district 10.Each PROCESS FOR TREATMENT module 9 comprises a surge chamber 11 and a process chamber 12, distributes before and after being, and surge chamber wherein is positioned at the front end of PROCESS FOR TREATMENT module 9, and is connected with second atmosphere transmission district 10.Surge chamber comprises a double-basis substrate transfer device 6b.Double-basis substrate transfer device 6b comprises two mechanical arms, and two mechanical arms are arranged at the two ends of double-basis substrate transfer device 6b, is that the axle center is symmetrical distribution with the base of double-basis substrate transfer device 6b.The action of double-basis substrate transfer device 6b is fairly simple, two mechanical arms can stretch to process chamber direction straight line, enter process chamber 12 by gate valve 14, therefore can transmit two substrates 7 simultaneously to process chamber 12 with two mechanical arms, or fetch two substrates 7 simultaneously from process chamber 12, also can be in process chamber 12 two substrates 7 of loading and unloading simultaneously.Double-basis substrate transfer device 6b does not do the function that moves up and down.The process chamber 12 of PROCESS FOR TREATMENT module 9 can hold two substrates 7 simultaneously, and to the implementing process processing simultaneously of these two substrates, is double-basis plate PROCESS FOR TREATMENT module therefore.
In this embodiment, during general operation, the double-basis substrate transfer device 2b that has two mechanical arms that [a] first atmosphere transmits district 8 takes out two substrates 7 respectively usually from the substrate box that substrate load port one is placed, delivering two substrates 7 then and returning back to 10 1 sides towards second atmosphere transmission district, one of them substrate 7 is sent to second atmosphere to be transmitted on one of them substrate mounting table 3 of distinguishing in 10, or carry out substrate orientation on the substrate orientation device 15, another substrate 7 is sent to second atmosphere transmits on another substrate mounting table 3 of distinguishing in 10, or carry out substrate orientation on the substrate orientation device 15.[b] second atmosphere transmits the double-basis substrate transfer device 4b that has two mechanical arms in district 10 respectively from two substrate mounting tables 3, or load two substrates 7 on two substrate orientation devices 15, delivering two substrates 7 then and sliding to the port of PROCESS FOR TREATMENT module 9 along sliding axle 5.When [c] is in atmospheric pressure state when the surge chamber in the PROCESS FOR TREATMENT module 9 11, the gate valve 13 that the surge chamber 11 and second atmosphere transmit between the district 10 can be opened, the double-basis substrate transfer device 4b that second atmosphere transmits district 10 is delivering two substrates 7 and is stretching and enter in the surge chamber 11, respectively two substrates 7 is offloaded to then on the both arms of double-basis substrate transfer device 6b of surge chamber 11.The gate valve 13 that [d] surge chamber 11 and second atmosphere transmit between the district 10 cuts out, when surge chamber 11 is evacuated to certain air pressure, gate valve 14 between surge chamber 11 and the process chamber 12 can be opened, and two mechanical arms of double-basis substrate transfer device 6b are delivering 7 stretching, extensions of two substrates and entering (see figure 5)s in the process chamber 12.Under the unloading after two substrates 7, two mechanical arms of double-basis substrate transfer device 6b are retracted into surge chamber 11 in process chamber 12.[e] after the gate valve 14 between surge chamber 11 and the process chamber 12 cut out, beginning was simultaneously to two substrate 7 implementing process processing in process chamber 12.After processes was finished, the gate valve 14 between surge chamber 11 and the process chamber 12 can be opened [f], and double-basis substrate transfer device 6b stretches and enters in the process chamber 12, loads two finished substrates 7 simultaneously, is retracted into surge chamber 11.[g] after the gate valve 14 between surge chamber 11 and the process chamber 12 cut out, surge chamber 11 began filling gass, and the pressure of surge chamber 11 rises.When [h] is in atmospheric pressure state when the surge chamber in the PROCESS FOR TREATMENT module 9 11, the gate valve 13 that the surge chamber 11 and second atmosphere transmit between the district 10 can be opened, the double-basis substrate transfer device 4b stretching, extension that second atmosphere transmits district 10 enters in the surge chamber 11, on the double-basis substrate transfer device 6b of surge chamber 11, two finished substrates 7 successively are loaded on it, are retracted into second atmosphere then and transmit in the district 10.The double-basis substrate transfer device 4b that [i] loading two finished substrates 7 slides near substrate mounting table 3 along sliding axle 5, then two finished substrates 7 are offloaded to respectively on two substrate cooling benches 16, or successively are offloaded on the different aspects of same substrate cooling bench 16.[j] is last, the double-basis substrate transfer device 2b that has two mechanical arms that first atmosphere transmits district 8 transmits two on the substrate cooling bench 16 finished substrates 7 and successively is loaded on it, transmits then in the substrate box that two finished substrates 7 place to the substrate load port one.So far, equipment has been finished once simultaneously the processes to two semiconductor substrates 7.When equipment carries a plurality of PROCESS FOR TREATMENT module 9, first atmosphere that comprises at equipment transmits district 8, second atmosphere transmits district 10, with the process that repeats above-mentioned [a]-[j] in the PROCESS FOR TREATMENT module 9,9 pairs of semiconductor substrate 7 implementing process processing of a plurality of PROCESS FOR TREATMENT modules of can simultaneously parallel use equipment carrying.
(see figure 6) in the third embodiment of the present invention, first atmosphere transmit district 8 and comprise at least two substrate load port ones and a double-basis substrate transfer device 2b.This double-basis substrate transfer device 2b comprises two mechanical arms, can deliver and transmit two substrates 7.Second atmosphere transmits district 10 and comprises two substrate mounting table 3, one double-basis substrate transfer devices 4b and a sliding axle 5.These two substrate mounting tables 3 are arranged on second atmosphere and transmit sides of distinguishing close first atmosphere transmission district 8 in 10, adjacent arrangement, and it is parallel with first atmosphere transmission district 8 to be a straight line, and vertical with sliding axle 5.Substrate mounting table 3 can be the combination of substrate orientation device 15 and substrate cooling bench 16, and promptly orlop is a substrate orientation device 15, is single or multiple lift substrate cooling bench 16 above the substrate orientation device.Double-basis substrate transfer device 4b comprises two mechanical arms, can deliver and transmit two substrates 7.Sliding axle 5 is linearly to be arranged between two short limits that second atmosphere transmits district 10, and to transmit district 8 vertical with first atmosphere.Second atmosphere transmits district 10 and has the rectangle base, and short one side is transmitted district 8 with first atmosphere and is connected, and long both sides are connected with at least two PROCESS FOR TREATMENT modules 9.The maximum quantity that second atmosphere transmits district's 10 PROCESS FOR TREATMENT modules 9 that can connect depends on that second atmosphere transmits the length in district 10.The length that second atmosphere transmits district 10 is long more, and PROCESS FOR TREATMENT module 9 quantity that it can connect are many more.PROCESS FOR TREATMENT module 9 can be adjacent to be arranged in the side that second atmosphere transmits district 10, also can relatively be arranged in the both sides that second atmosphere transmits district 10.Each PROCESS FOR TREATMENT module 9 comprises a surge chamber 11 and a process chamber 12, distributes before and after being, and surge chamber 11 wherein is positioned at the front end of PROCESS FOR TREATMENT module 9, and is connected with second atmosphere transmission district 10.Surge chamber 11 comprises two monobasal conveyer 6a.The action of monobasal conveyer 6a is fairly simple, can stretch to process chamber 12 direction straight lines, enter process chamber 12 by gate valve 14, therefore can transmit two substrates 7 simultaneously to process chamber 12 with two monobasal conveyer 6a, or fetch two substrates 7 simultaneously from process chamber 12, also can be in process chamber 12 two substrates 7 of loading and unloading simultaneously.Monobasal conveyer 6a does not do the function that moves up and down.The process chamber 12 of PROCESS FOR TREATMENT module 9 can hold four substrates 7 simultaneously, and to this four substrates 7 implementing process processing simultaneously.
In this embodiment, during general operation, the double-basis substrate transfer device 2b that has two mechanical arms that [a] first atmosphere transmits district 8 takes out two substrates 7 respectively usually from the substrate box that substrate load port one is placed, delivering two substrates 7 then and returning back to 10 1 sides towards second atmosphere transmission district, one of them substrate 7 is sent to second atmosphere to be transmitted on one of them substrate mounting table 3 of distinguishing in 10, or carry out substrate orientation on the substrate orientation device 15, another substrate 7 is sent to second atmosphere transmits on another substrate mounting table 3 of distinguishing in 10, or carry out substrate orientation on the substrate orientation device 15.[b-1] second atmosphere transmits the double-basis substrate transfer device 4b that has two mechanical arms in district 10 respectively from two substrate mounting tables 3, or load two substrates 7 on two substrate orientation devices 15, delivering two substrates 7 then and sliding to the port of PROCESS FOR TREATMENT module 9 along sliding axle 5.[b-2] meanwhile, the double-basis substrate transfer device 2b in first atmosphere transmission district 8 repeats the operation of above-mentioned [a], two other substrate 7 is sent to second atmosphere transmits on two substrate mounting tables 3 distinguishing in 10 from the substrate box that substrate load port one is placed, or carry out substrate orientation on the substrate orientation device 15.When [c] is in atmospheric pressure state when the surge chamber in the PROCESS FOR TREATMENT module 9 11, the gate valve 13 that the surge chamber 11 and second atmosphere transmit between the district 10 can be opened, the double-basis substrate transfer device 4b in second atmosphere transmission district 10 is delivering 7 stretching, extensions of two substrates and is entering in the surge chamber 11, respectively two substrates 7 is offloaded on two monobasal conveyer 6a of surge chamber 11 then.The gate valve 13 that [d] surge chamber 11 and second atmosphere transmit between the district 10 cuts out, when surge chamber 11 is evacuated to certain air pressure, gate valve 14 between surge chamber 11 and the process chamber 12 can be opened, and two monobasal conveyer 6a are delivering two substrates 7 and stretching simultaneously and enter (see figure 7)s in the process chamber 12.[e-1] two monobasal conveyers 6a under the unloading simultaneously after two substrates 7, is retracted into surge chamber 11 simultaneously in process chamber 12, then, surge chamber 11 beginning filling gass, the pressure of surge chamber 11 rises.[e-2] meanwhile, second atmosphere transmits the double-basis substrate transfer device 4b in district 10 respectively from two substrate mounting tables 3, or load two other substrate 7 on two substrate orientation devices 15, delivering two substrates 7 then and sliding to the port of same PROCESS FOR TREATMENT module 9 along sliding axle 5.When [f] reaches atmospheric pressure state when the air pressure of surge chamber 11, the gate valve 13 that the surge chamber 11 and second atmosphere transmit between the district 10 can be opened, the double-basis substrate transfer device 4b that second atmosphere transmits district 10 is sent to two other substrate 7 on two monobasal conveyer 6a, then, the gate valve 13 that the surge chamber 11 and second atmosphere transmit between the district 10 cuts out, and surge chamber 11 begins to vacuumize.When [g] was evacuated to certain air pressure when surge chamber 11, the gate valve 14 between surge chamber 11 and the process chamber 12 can be opened, and two monobasal conveyer 6a are sent to these two substrates 7 in the process chamber 12 simultaneously.Four pending substrates 7 in process chamber 12, have been placed like this.[h] after the gate valve 14 between surge chamber 11 and the process chamber 12 cut out, beginning was simultaneously to four substrate 7 implementing process processing in process chamber 12.After processes was finished, the gate valve 14 between surge chamber 11 and the process chamber 12 can be opened [i], and two monobasal conveyer 6a stretch simultaneously and enter in the process chamber 12, loaded two finished substrates 7 simultaneously, was retracted into surge chamber 11.After the gate valve 14 between surge chamber 11 and the process chamber 12 cuts out, surge chamber 11 beginning filling gass, the pressure of surge chamber 11 rises.When [j] is in atmospheric pressure state when the surge chamber in the PROCESS FOR TREATMENT module 9 11, the gate valve 13 that the surge chamber 11 and second atmosphere transmit between the district 10 can be opened, the double-basis substrate transfer device 4b stretching, extension that second atmosphere transmits district 10 enters in the surge chamber 11, on two monobasal conveyer 6a of surge chamber 11, two finished substrates 7 successively are loaded on it, are retracted into second atmosphere then and transmit in the district 10.The double-basis substrate transfer device 4b that [k-1] loading two finished substrates 7 slides near substrate mounting table 3 along sliding axle 5, then two finished substrates 7 are offloaded to respectively on two substrate cooling benches 16, or successively are offloaded on the different aspects of same substrate cooling bench 16.[k-2] meanwhile closes the surge chamber 11 and second atmosphere and transmits the gate valve of distinguishing between 10 13, and surge chamber 11 begins to vacuumize.When surge chamber 11 is evacuated to certain air pressure, gate valve 14 between surge chamber 11 and the process chamber 12 can be opened, two monobasal conveyer 6a take out two other substrate of handling 7 from process chamber 12 simultaneously, close the gate valve 14 between surge chamber 11 and the process chamber 12 then, surge chamber 11 beginning filling gass, the pressure of surge chamber 11 rises.[1] when the surge chamber in the PROCESS FOR TREATMENT module 9 11 is in atmospheric pressure state, the gate valve 13 that the surge chamber 11 and second atmosphere transmit between the district 10 can be opened, the double-basis substrate transfer device 4b that second atmosphere transmits district 10 takes out two other substrate of handling 7 in surge chamber 11, then two finished substrates 7 are offloaded to respectively on two substrate cooling benches 16, or successively are offloaded on the different aspects of same substrate cooling bench 16.[m] is last, and the double-basis substrate transfer device 2b that first atmosphere transmits district 10 successively is sent to four on the substrate mounting table 3 finished substrates 7 in the substrate box of placing on the substrate load port one at twice.So far, equipment has been finished once simultaneously the processes to four semiconductor substrates 7.When equipment carries a plurality of PROCESS FOR TREATMENT module 9, first atmosphere that comprises at equipment transmits district 8, second atmosphere transmits district 10, with the process that repeats above-mentioned [a]-[m] in the PROCESS FOR TREATMENT module 9, can be with 9 pairs of semiconductor substrate 7 implementing process processing of a plurality of PROCESS FOR TREATMENT modules of carrying with parallel use equipment.
The foregoing description 1-3, wherein the described process chamber 12 of PROCESS FOR TREATMENT module 9 can be implemented plasma enhanced CVD technology to substrate 7.
Claims (13)
1. processing device of semiconductor substrate is characterized in that: it comprises one first atmosphere and transmits the district, and it has one or more substrate load port and one or more base plate transfer device; And one second atmosphere transmission district, it has one or more substrate mounting table, one or more base plate transfer device and a sliding axle; And one or more PROCESS FOR TREATMENT module, it has one or more surge chamber, with one or more process chamber, wherein said second atmosphere transmits the district and is connected in described first atmosphere transmission district, wherein said PROCESS FOR TREATMENT module is connected to described second atmosphere and transmits in the district, and the side by the surge chamber in the described PROCESS FOR TREATMENT module is connected with described second atmosphere transmission district, the surge chamber in the wherein said PROCESS FOR TREATMENT module, and it has one or more base plate transfer device.
2. processing device of semiconductor substrate according to claim 1, it is characterized in that: wherein first atmosphere transmits one or more described substrate load port of distinguishing and is arranged in the one side, described second atmosphere transmits the district and is connected its opposite side, and described transporting substrates, device is set between the above-mentioned both sides.
3. processing device of semiconductor substrate according to claim 1 and 2, it is characterized in that: wherein second atmosphere transmits to distinguish and has the rectangle base, its short one side is transmitted the district with described first atmosphere and is connected, described substrate mounting table transmits the district near described first atmosphere, described sliding axle is linearly to be arranged between its two short limits, and the district is vertical with described first atmosphere transmission, and described base plate transfer device is arranged on the described sliding axle.
4. according to claim 1 or 3 described processing device of semiconductor substrate, it is characterized in that: wherein first atmosphere transmits in the substrate box that the described base plate transfer device in district can place from described substrate load port and loads one or more substrate, being sent to described second atmosphere then transmits on the interior described substrate mounting table in district, also can load one or more substrate of handling, be sent to then in the substrate box of placing on the described substrate load port in described first atmosphere transmission district from the described substrate mounting table that described second atmosphere transmits in the district.
5. according to claim 1 or 3 or 4 described processing device of semiconductor substrate, it is characterized in that: wherein the described substrate mounting table in second atmosphere transmission district further comprises one or more substrate cooling bench and a substrate orientation device.
6. processing device of semiconductor substrate according to claim 1, it is characterized in that: wherein the length in second atmosphere transmission district can change, its length determines that by the quantity of connected described PROCESS FOR TREATMENT module the quantity of described PROCESS FOR TREATMENT module is unrestricted.
7. processing device of semiconductor substrate according to claim 6, it is characterized in that: wherein second atmosphere transmits a plurality of described PROCESS FOR TREATMENT module that the district connects and can one be adjacent to be arranged in the same side that it has longer sides point-blank, and parallel with described sliding axle, the quantity of described PROCESS FOR TREATMENT module can increase and increase along with described second atmosphere transmits the length of distinguishing.
8. processing device of semiconductor substrate according to claim 6, it is characterized in that: wherein the transmission of second atmosphere is distinguished a plurality of described PROCESS FOR TREATMENT module that connects and can be arranged the both sides that it has longer sides Face to face across described second atmosphere transmission district, and the quantity of described PROCESS FOR TREATMENT module can increase and increase along with the length that described second atmosphere transmission is distinguished.
9. processing device of semiconductor substrate according to claim 1 is characterized in that: the described surge chamber of PROCESS FOR TREATMENT module wherein, and its positive and described second atmosphere transmits to distinguish and is connected, and its side or reverse side are connected with described process chamber.
10. processing device of semiconductor substrate according to claim 1, it is characterized in that: wherein second atmosphere transmits the described base plate transfer device of distinguishing and can load one or more substrate from described substrate mounting table, delivering one or more substrate then stops before described sliding axle slides into described PROCESS FOR TREATMENT module, enter described surge chamber by gate valve at last, thereby transmit one or more substrate to the base plate transfer device of described surge chamber.
11. processing device of semiconductor substrate according to claim 1, it is characterized in that: wherein second atmosphere transmits the described base plate transfer device of distinguishing and can enter described surge chamber by gate valve, load one or more substrate of handling from the base plate transfer device of described surge chamber, deliver one or more substrate of handling then and before described sliding axle slides into described substrate mounting table, stop, transmitting one or more substrate of handling at last to described substrate mounting table.
12. processing device of semiconductor substrate according to claim 1 is characterized in that: wherein the described base plate transfer device of surge chamber can enter described process chamber by gate valve, thus in described process chamber the loading and unloading substrate; Wherein can place a plurality of substrates simultaneously in the described process chamber of PROCESS FOR TREATMENT module, and described a plurality of substrates are carried out processed simultaneously.
13. processing device of semiconductor substrate according to claim 12, it is characterized in that: the described base plate transfer device of surge chamber wherein, can transmit one or more substrate simultaneously to described process chamber, in described process chamber, unload one or more substrate then simultaneously, also can in described process chamber, load the substrate that one or more was handled simultaneously, from described process chamber, take out the substrate that one or more was handled then simultaneously.
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| CN2010100053354A CN101764050B (en) | 2010-01-15 | 2010-01-15 | Processing device of semiconductor substrate |
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| CN2010100053354A CN101764050B (en) | 2010-01-15 | 2010-01-15 | Processing device of semiconductor substrate |
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| CN101764050B CN101764050B (en) | 2012-05-02 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064095A (en) * | 2010-12-03 | 2011-05-18 | 孙丽杰 | Semiconductor substrate processing equipment |
| CN102534556A (en) * | 2012-02-20 | 2012-07-04 | 姜谦 | Normal-pressure multi-cavity atomic layer deposition equipment |
| CN104616955A (en) * | 2013-11-04 | 2015-05-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment |
| CN105529239A (en) * | 2016-03-07 | 2016-04-27 | 京东方科技集团股份有限公司 | Dry etching device and method |
-
2010
- 2010-01-15 CN CN2010100053354A patent/CN101764050B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064095A (en) * | 2010-12-03 | 2011-05-18 | 孙丽杰 | Semiconductor substrate processing equipment |
| CN102534556A (en) * | 2012-02-20 | 2012-07-04 | 姜谦 | Normal-pressure multi-cavity atomic layer deposition equipment |
| CN104616955A (en) * | 2013-11-04 | 2015-05-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment |
| CN105529239A (en) * | 2016-03-07 | 2016-04-27 | 京东方科技集团股份有限公司 | Dry etching device and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101764050B (en) | 2012-05-02 |
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