CN102534556A - Normal-pressure multi-cavity atomic layer deposition equipment - Google Patents
Normal-pressure multi-cavity atomic layer deposition equipment Download PDFInfo
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- CN102534556A CN102534556A CN2012100385842A CN201210038584A CN102534556A CN 102534556 A CN102534556 A CN 102534556A CN 2012100385842 A CN2012100385842 A CN 2012100385842A CN 201210038584 A CN201210038584 A CN 201210038584A CN 102534556 A CN102534556 A CN 102534556A
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Abstract
The invention discloses normal-pressure multi-cavity atomic layer deposition equipment and aims to solve the technical problems of long film forming process, low output, complex equipment and high manufacturing cost in the prior art. The equipment comprises a cooling system and a chip storage device. Each precursor has an independent reaction cavity; an energy source device is arranged in at least one reaction cavity; and the reaction cavities are isolated by an inert gas. The chip storage device, the cooling system and the reaction cavity are connected and communicated with a conveying device, the cooling system can be installed selectively according to actual needs, the equipment may have a plurality of reaction cavities and a plurality of conveying devices, and cavities which can form an atomic layer thickness film constitute a set of cavities, so that multiple loading can be realized. The equipment adopts rectangular cavity structures and ring cavity structures. The equipment can be used in the field of film coating on substrates such as metal, glass, silicon chips, plastics, templates and the like.
Description
Technical field
The present invention relates to a kind of equipment of atomic shell vapour deposition, be applied to atomic shell gas phase deposition technology under the normal pressure, belong to the film coating field.
Background technology
Ald (Atomic layer deposition is called for short ALD) technology is the film deposition techniques of forefront.Its principle is through the pulse of gas phase presoma alternately being fed reactor drum and chemisorption and reaction on the deposition matrix, and in layer forms a kind of method of deposited film with the form of monatomic film.In deposition process, first kind of reaction precursor body (precursor) is input to substrate material surface and remains on the surface through chemisorption (saturated absorption).When second kind of presoma feeds reactor drum; Can at first be adsorbed on first kind of precursor surface, a kind of activation energy is provided then, let two kinds of presomas react; And produce corresponding by product and take out through vacuum apparatus; Form the reactive film of an atomic layer level thickness, repeat this cycle, until the film that forms desired thickness.This film technique can be grown extremely thin film on matrix, can accurately control the thickness of film, can on the matrix of Any shape, carry out the covering near 100%.
There is following problem in traditional ALD equipment in the process that is the matrix overlay film: (1) all reaction process all need under vacuum state, to accomplish, and the device that makes cavity maintain vacuum state can add the manufacturing cost of large equipment; (2) be the matrix overlay film under vacuum state, base shape and size are limited by reaction chamber, can not surpass the capacity of reaction chamber.(3) different precursors feed reaction chamber according to chronological order, and matrix reacts with the precursor that feeds this cavity in order in reaction chamber, and film process is consuming time long; (4) institute of film process all accomplishes in a reaction chamber in steps, and a reaction chamber can only carry out overlay film for the matrix of a chamber capacity at every turn, yields poorly; Need the regular hour to reach steady state when (5) precursor feeds reaction chamber; And the steps such as switching, purging of control precursor also can take the regular hour; Prolonged the overlay film time of entire equipment thus, and this step requirement device structure is complicated, has strengthened manufacturing cost.
Summary of the invention
The objective of the invention is deficiency, researched and developed a kind of low cost, high efficiency normal pressure multi-cavity ald film-forming apparatus to above-mentioned prior art.The present invention becomes the synthesis under normal pressure environment with the vacuum reaction environment of conventional atomic layer depositing device, has simplified reaction unit.Adjusted original reaction chamber structure simultaneously; Precursor is fed a reaction chamber according to chronological order; And in a reaction chamber, accomplish the whole film covering structure of process; Become each precursor and have an independently reaction chamber, in each reaction chamber, accomplish a reactions step, and then accomplish the whole film covering structure of process.Contrast traditional ALD equipment, the present invention has become the synthesis under normal pressure environment with the vacuum reaction environment of legacy equipment, and a reaction chamber of legacy equipment has been become a plurality of reaction chambers; The patent of contrast " a kind of vacuum multi-cavity atomic layer deposition apparatus ", the present invention has become the equipment of its vacuum multi-cavity the equipment of normal pressure multi-cavity.
For realizing above-mentioned purpose; The present invention adopts following technical proposals: a kind of normal pressure multi-cavity atomic layer deposition apparatus comprises cooling system and deposits the sheet device that each precursor has an independently reaction chamber; Be provided with the energy derive device at least one reaction chamber therein; Separate with rare gas element between each reaction chamber, above-mentioned sheet device, cooling system and the reaction chamber deposited joins with transport unit and communicates, and wherein cooling system can carry out selectivity according to actual needs and installs.This equipment has been adjusted original reaction chamber structure, makes each precursor have an independently reaction chamber, and in deposition process, keeps the feeding state always.Separate with rare gas element between each reaction chamber; Matrix (can be materials such as metal, glass, silicon chip, plastics, template) through transport unit (can be mechanical manipulator, travelling belt, rotating disk, screw thread etc.) when a reaction chamber shifts out earlier through rare gas element gas wall, removes the next reaction chamber of entering behind unnecessary precursor and the by product.Rare gas element gas wall between the reaction chamber can be with a kind of gas; Also can different sorts gas be set according to reaction needed; This gas wall is except separating cavity; Avoid can also playing the effect that matrix is purged outside precursor between the reaction chamber reacts, this step is equivalent in traditional ALD equipment through vacuumizing the process of removing precursor and by product unnecessary in the cavity.Matrix is cyclic motion between each chamber, and under the effect of energy derive device (plasma body, well heater, ultraviolet ray, infrared rays, light source etc.), reacts with the intravital precursor of different cavity and accomplish the overlay film process, forms required film.The energy derive device can exist with reaction chamber form independently, also can be loaded in one of them required reaction chamber of reaction, and the reaction conditions that reaches according to the precursor needs is provided with.This equipment can have a plurality of reaction chambers, a plurality of transport unit.With the reaction chamber that can generate one deck atomic layer level thickness film is a cover cavity, and the quantity of reaction chamber can increase according to reaction needed in the cover cavity; This equipment can be a cover cavity, also can be according to the output requirement, and cavity is overlapped in loading at double more.But each overlaps the congener film of cavity growth phase, and different types of film of also can growing can adopt the mode of serial or parallel connection to arrange, and reaction chamber quantity can not wait in every cover cavity.
The present invention has solved the problem that traditional ALD equipment exists preferably, and has following advantage: (1) all reaction process are all accomplished under atmospheric pressure state, have reduced the device that makes cavity maintain vacuum state, have greatly reduced the manufacturing cost of equipment; (2) shape of matrix and the big or small restriction that does not receive reaction chamber; (3) have a plurality of reaction chambers, each precursor has independently reaction chamber, and matrix can generate required film with different precursor direct reaction in each reaction chamber, improved the efficient of atomic layer deposition apparatus; (4) each reaction chamber feeds a kind of precursor all the time, need not control the steps such as switching, purging of precursor, has reduced the reaction times, need not add the structure of steps such as the switching of control precursor, purging, has reduced equipment cost.The present invention can be implemented under the atmospheric condition, and matrix carries out overlay film in order simultaneously in each reaction chamber, and the matrix size does not receive the restriction of reaction chamber size, rate of film build is fast, output is high.Convenient, application widely that this atomic layer deposition apparatus has at aspects such as chip manufacturing, battery, sun power, military affairs, mover, medical treatment.
Description of drawings
Fig. 1 is a structural representation of the present invention, also is embodiments of the invention one.
Fig. 2 is embodiments of the invention two.
Embodiment
Embodiment one
With reference to Fig. 1, this equipment be by three reaction chambers be one the cover cavity the equipment synoptic diagram, be a rectangle cavity configuration, it comprises cooling system 1, deposits sheet device 2, transport unit 9, reaction chamber A4, reaction chamber B6 and reaction chamber C8.Set up precursor A3 and precursor B5 among above-mentioned reaction chamber A4 and the reaction chamber B6 separately; Be provided with energy derive device A7 in the above-mentioned reaction chamber C8; Above-mentioned reaction chamber A4 and deposit 2 in sheet device and be provided with to be provided with between rare gas element gas wall A10, reaction chamber A4 and reaction chamber B6 and be provided with rare gas element gas wall C12 between rare gas element gas wall B11 and reaction chamber B6 and reaction chamber C8.
Kept apart as the chamber wall by rare gas element between above-mentioned each reaction chamber, each cavity all keeps atmospheric pressure state.Transport unit takes out matrix from deposit the sheet device; Matrix delivered to earlier among the reaction chamber A4 react with precursor A3; After finishing, reaction drives matrixes through rare gas element gas wall B11 by transport unit 9; Remove the by product that unnecessary precursor A3 and reaction produce, move to then among the reaction chamber B6 and react, drive matrixes through rare gas element gas wall C12 by transport unit 9 after reaction finishes with precursor B5; Remove the by product that unnecessary precursor B5 and reaction produce, delivering to then reacts under the reaction conditions that energy derive device A7 provides among the reaction chamber C8 generates the film of an atomic layer level thickness.Transport unit 9 drives matrix constantly in each reaction chamber internal recycle reaction; Until the film that generates desired thickness; At last matrix is sent into to be put back into after cooling system 1 cools off and deposit in the sheet device 2; Cooling system 1 can be provided with according to equipment claimed with the position and the quantity of depositing sheet device 2, and cooling system can carry out selectivity according to actual needs and install.Under atmospheric pressure state, the rare gas element gas wall between the reaction chamber be except separating cavity, avoids can also playing the effect that matrix is purged outside precursor between the reaction chamber reacts.Transport unit 9 can carry several matrixes or a big matrix in different cavitys, to react simultaneously.It is a cover cavity with the cavity that can generate one deck atomic layer level thickness film on this basis that this equipment also can require according to reaction needed and output, loading at double.Realize thus under the atmospheric pressure state, in each reaction chamber, accomplish a reactions step, constantly repeat this step,, and then accomplish the whole film covering structure of process until the film that generates desired thickness.
Embodiment two
With reference to Fig. 2; This equipment be by three reaction chambers be one the cover cavity; Have the equipment synoptic diagram of two cover cavitys; Be the cavity configuration of an annular, it comprises cooling system 1, deposits sheet device 2, transport unit 9, reaction chamber A4, reaction chamber B6, reaction chamber C8, reaction chamber D17, reaction chamber E19 and reaction chamber F21.Set up precursor A3, precursor B5, precursor C16 and precursor D18 among above-mentioned reaction chamber A4, reaction chamber B6, reaction chamber D17 and the reaction chamber E19 separately; Be provided with in the above-mentioned reaction chamber C8 and be provided with energy derive device B20 in energy derive device A7, the reaction chamber F21; Above-mentioned reaction chamber A4 and deposit 2 in sheet device and be provided with to be provided with between rare gas element gas wall A10, reaction chamber A4 and reaction chamber B6 to be provided with between rare gas element gas wall B11, reaction chamber B6 and reaction chamber C8 to be provided with between rare gas element gas wall C12, reaction chamber C8 and reaction chamber D17 to be provided with between rare gas element gas wall D13, reaction chamber D17 and reaction chamber E19 and be provided with rare gas element gas wall F15 between rare gas element gas wall E14 and reaction chamber E19 and reaction chamber F21.
Kept apart as the chamber wall by rare gas element between above-mentioned each reaction chamber, each cavity all keeps atmospheric pressure state.Transport unit 9 takes out matrix from deposit sheet device 2; Driving matrix reacts with precursor A3 in reaction chamber A4; Drive matrix after reaction finishes and remove unreacted precursor A3 and unnecessary by product through rare gas element gas wall B11; Then matrix is moved among the reaction chamber B6 and react with precursor B5; Drive matrix after reaction finishes and remove unreacted precursor B5 and unnecessary by product through rare gas element gas wall C12, next matrix is sent among the reaction chamber C8 that the energy derive device is housed, and under the reaction conditions that energy derive device A7 provides, reacting generates the film of an atomic layer level thickness.Transport unit 9 continues to move matrix this reaction process that in reaction chamber D17, reaction chamber E19 and reaction chamber F21, circulate, and the film of two atomic layer level thickness of generation can be different types of film, can be the film of identical type.Constantly repeat this step, until the film that generates desired thickness, at last matrix is sent into to be put back into after cooling system 1 cools off and deposit in the sheet device 2, cooling system can carry out selectivity according to actual needs and install.Under atmospheric pressure state, the rare gas element between the reaction chamber be except separating cavity, avoids can also playing the effect that matrix is purged outside precursor between the reaction chamber reacts.Transport unit 9 can carry several matrixes or a big matrix in different cavitys, to react respectively simultaneously.It is a cover cavity with the cavity that can generate one deck atomic layer level thickness film on this basis that this equipment also can require according to reaction needed and output, loading at double.Realize thus under the atmospheric pressure state, in each reaction chamber, accomplish a reactions step, constantly repeat this step, until film that generates desired thickness and then completion whole film covering structure of process.
Claims (4)
1. a normal pressure multi-cavity atomic layer deposition apparatus comprises cooling system and deposits the sheet device, and it is characterized in that: each precursor has an independently reaction chamber; Be provided with the energy derive device at least one reaction chamber therein; Separate with rare gas element between each reaction chamber, rare gas element can be with a kind of gas, also can be gas not of the same race; The above-mentioned sheet device, cooling cooling system and reaction chamber deposited joins with transport unit and communicates; Wherein cooling system can carry out the selectivity installation according to actual needs, and this equipment can have a plurality of reaction chambers, a plurality of transport unit, is a cover cavity according to reaction needed with the cavity that can generate one deck atomic layer level thickness film; Loading at double, each overlaps cavity and can adopt the mode of serial or parallel connection to arrange.
2. a kind of normal pressure multi-cavity atomic layer deposition apparatus as claimed in claim 1 is characterized in that: described equipment adopts the cavity configuration of rectangle cavity configuration and annular.
3. a kind of normal pressure multi-cavity atomic layer deposition apparatus as claimed in claim 1; It is characterized in that: this equipment is a rectangle cavity configuration; It comprises cooling system, deposits the sheet device; Wherein cooling system can carry out the selectivity installation according to actual needs, is respectively equipped with reaction chamber A, reaction chamber B and reaction chamber C on the transport unit, sets up precursor A and precursor B among above-mentioned reaction chamber A and the reaction chamber B separately; Be provided with energy derive device A in the above-mentioned reaction chamber C; Above-mentioned reaction chamber A and deposit to be provided with between the sheet device to be provided with between rare gas element gas wall A, reaction chamber A and reaction chamber B and be provided with rare gas element gas wall C between rare gas element gas wall B and reaction chamber B and reaction chamber C; Kept apart as the chamber wall by rare gas element between above-mentioned each reaction chamber, each cavity all keeps atmospheric pressure state.
4. a kind of normal pressure multi-cavity atomic layer deposition apparatus as claimed in claim 1; It is characterized in that: this equipment is the cavity configuration of an annular; It comprises cooling system, deposits the sheet device; Wherein cooling system can carry out the selectivity installation according to actual needs; Be respectively equipped with reaction chamber A, reaction chamber B, reaction chamber C, reaction chamber D, reaction chamber E and reaction chamber F around transport unit, set up precursor A, precursor B, precursor C and precursor D among above-mentioned reaction chamber A, reaction chamber B, reaction chamber D and the reaction chamber E separately; Be provided with in the above-mentioned reaction chamber C and be provided with energy derive device B in energy derive device A, the reaction chamber F; Above-mentioned reaction chamber A and deposit to be provided with between the sheet device to be provided with between rare gas element gas wall A, reaction chamber A and reaction chamber B to be provided with between rare gas element gas wall B, reaction chamber B and reaction chamber C to be provided with between rare gas element gas wall C, reaction chamber C and reaction chamber D to be provided with between rare gas element gas wall D, reaction chamber D and reaction chamber E and be provided with rare gas element gas wall F between rare gas element gas wall E and reaction chamber E and reaction chamber F; Kept apart as the chamber wall by rare gas element between above-mentioned each reaction chamber, each cavity all keeps atmospheric pressure state.
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| CN2012100385842A CN102534556A (en) | 2012-02-20 | 2012-02-20 | Normal-pressure multi-cavity atomic layer deposition equipment |
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| CN2012100385842A CN102534556A (en) | 2012-02-20 | 2012-02-20 | Normal-pressure multi-cavity atomic layer deposition equipment |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103668120A (en) * | 2013-12-02 | 2014-03-26 | 华中科技大学 | Multi-substance atomic layer deposition film making method and apparatus thereof |
| CN104046958A (en) * | 2014-06-06 | 2014-09-17 | 华中科技大学 | Device and method for surface modification of micro-nano particles |
| CN104342637A (en) * | 2013-07-26 | 2015-02-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atomic layer deposition equipment |
| CN109868460A (en) * | 2019-03-14 | 2019-06-11 | 嘉兴科民电子设备技术有限公司 | A kind of film growth system and growing method |
| CN115305459A (en) * | 2022-10-10 | 2022-11-08 | 江苏思尔德科技有限公司 | Atomic layer deposition equipment |
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| US20050084610A1 (en) * | 2002-08-13 | 2005-04-21 | Selitser Simon I. | Atmospheric pressure molecular layer CVD |
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| CN101764050A (en) * | 2010-01-15 | 2010-06-30 | 刘忆军 | Processing device of semiconductor substrate |
| US20110217469A1 (en) * | 2008-12-31 | 2011-09-08 | Lawrence Chung-Lai Lei | Methods and Systems of Transferring, Docking and Processing Substrates |
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Patent Citations (5)
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| US20050084610A1 (en) * | 2002-08-13 | 2005-04-21 | Selitser Simon I. | Atmospheric pressure molecular layer CVD |
| US20060156979A1 (en) * | 2004-11-22 | 2006-07-20 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
| CN101333648A (en) * | 2007-06-26 | 2008-12-31 | 茂德科技股份有限公司 | Atomic layer deposition device and Atomic layer deposition method |
| US20110217469A1 (en) * | 2008-12-31 | 2011-09-08 | Lawrence Chung-Lai Lei | Methods and Systems of Transferring, Docking and Processing Substrates |
| CN101764050A (en) * | 2010-01-15 | 2010-06-30 | 刘忆军 | Processing device of semiconductor substrate |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104342637A (en) * | 2013-07-26 | 2015-02-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atomic layer deposition equipment |
| CN103668120A (en) * | 2013-12-02 | 2014-03-26 | 华中科技大学 | Multi-substance atomic layer deposition film making method and apparatus thereof |
| CN103668120B (en) * | 2013-12-02 | 2016-04-13 | 华中科技大学 | A kind of multi-component ald membrane preparation method and device |
| CN104046958A (en) * | 2014-06-06 | 2014-09-17 | 华中科技大学 | Device and method for surface modification of micro-nano particles |
| CN109868460A (en) * | 2019-03-14 | 2019-06-11 | 嘉兴科民电子设备技术有限公司 | A kind of film growth system and growing method |
| CN109868460B (en) * | 2019-03-14 | 2021-10-15 | 嘉兴科民电子设备技术有限公司 | Film growth system and growth method |
| CN115305459A (en) * | 2022-10-10 | 2022-11-08 | 江苏思尔德科技有限公司 | Atomic layer deposition equipment |
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Application publication date: 20120704 |